JP5899803B2 - Nitride semiconductor device - Google Patents

Description

  The present invention relates to a nitride semiconductor device having comb-shaped electrodes.

A nitride semiconductor device using a nitride semiconductor is used for a high voltage power device or the like. A typical nitride semiconductor is represented by Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and includes gallium nitride (GaN) and aluminum nitride (AlN). ), Indium nitride (InN), and the like. For example, in a high electron mobility transistor (HEMT), a heterojunction surface is formed at the interface between a carrier traveling layer and a carrier supply layer made of nitride semiconductors having different band gap energies. A two-dimensional carrier gas layer as a current path (channel) is formed in the carrier traveling layer in the vicinity of the heterojunction surface.

  A comb structure in which a source diffusion region and a drain diffusion region are intertwined with each other is employed in the transistor structure. As a structure for increasing the breakdown voltage of a lateral semiconductor device in which a comb-shaped drain diffusion region and a source diffusion region are arranged in an interdigitated manner, a method of increasing the drift length in the vicinity of the tip of the comb teeth has been proposed ( For example, see Patent Document 1.)

JP 2001-7339 A

  In a HEMT having a two-dimensional carrier gas layer as a channel, the breakdown voltage cannot be improved by changing the shape of the diffusion region as described in Patent Document 1 due to the difference in transistor structure.

  The present invention provides a nitride semiconductor device having an electrode structure in which comb-shaped source electrodes and drain electrodes are arranged in an interdigitated manner, and electric field concentration is reduced at the tip of each comb-shaped electrode. With the goal.

According to one aspect of the present invention, (b) a nitride semiconductor layer in which a carrier supply layer and a carrier travel layer that forms a heterojunction with the carrier supply layer are stacked, and (b) disposed on the nitride semiconductor layer. An insulating film; (c) a comb-shaped source electrode having a plurality of teeth disposed on the nitride semiconductor layer; and (d) an interdigitated source electrode on the nitride semiconductor layer. A comb-shaped drain electrode having a plurality of tooth portions; (e) a gate electrode disposed on the nitride semiconductor layer between the source electrode and the drain electrode; and (f) electrically connected to the gate electrode, A gate field plate disposed on the insulating film between the gate electrode and the drain electrode, and a distance between the drain side end of the gate field plate and the drain side end of the gate electrode is determined by the tooth portion of the source electrode and the drain electrode. Straight Long nitride semiconductor device is provided in the distal end region of the teeth of the source electrode and the drain electrode than the region.

  According to the present invention, there is provided a nitride semiconductor device having an electrode structure in which comb-shaped source and drain electrodes are arranged in an interdigitated manner and in which electric field concentration at the tip of each comb-shaped electrode is reduced. it can.

1 is a schematic plan view showing the structure of a nitride semiconductor device according to a first embodiment of the present invention. 1 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to a first embodiment of the present invention. FIG. 3A is a schematic plan view showing the structure of the tip region of the nitride semiconductor device according to the first embodiment of the present invention, FIG. 3A shows the tip region of the source electrode, and FIG. The tip region of the electrode is shown. 5 is a table showing an example of distances between regions in the nitride semiconductor device according to the first embodiment of the present invention. FIG. 7 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to a modification of the first embodiment of the present invention. FIG. 5 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to a second embodiment of the present invention. FIG. 7A is a schematic plan view showing a structure of a tip region of a nitride semiconductor device according to a second embodiment of the present invention, FIG. 7A shows a tip region of a source electrode, and FIG. The tip region of the electrode is shown. 6 is a table showing an example of distances between regions in a nitride semiconductor device according to a second embodiment of the present invention. FIG. 6 is a schematic plan view showing the structure of a nitride semiconductor device according to a third embodiment of the present invention. 7 is a table showing an example of distances between regions in a nitride semiconductor device according to a third embodiment of the present invention.

  Next, first to third embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the lengths of the respective parts, and the like are different from the actual ones. Therefore, specific dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  The following first to third embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is the shape of a component. The structure, arrangement, etc. are not specified below. The embodiment of the present invention can be variously modified within the scope of the claims.

(First embodiment)
As shown in FIG. 1, a nitride semiconductor device 1 according to a first embodiment of the present invention includes a comb-shaped source electrode 3 having a plurality of tooth portions extending in the vertical direction toward the paper surface, and A drain electrode 4 and a gate electrode 5 disposed between the source electrode 3 and the drain electrode 4 are provided. The comb teeth of the source electrode 3 and the drain electrode 4 are arranged in a crossed finger shape. That is, each tooth portion of the drain electrode is disposed between each tooth portion of the source electrode 3. For this reason, the gate electrode 5 is arranged in multiple folds so as to overlap in the left-right direction toward the paper surface.

  Hereinafter, a region where the tooth portions of the source electrode 3 and the drain electrode 4 extend linearly in parallel is referred to as a “linear region”. A region where the outer edges of the tooth portions of the source electrode 3 and the drain electrode 4 are curved is called a “tip region”.

  FIG. 2 shows cut surfaces along the AA direction, the BB direction, and the CC direction of FIG. The AA direction is a direction perpendicular to the direction in which the tooth portions of the source electrode 3 and the drain electrode 4 extend in the linear region of the source electrode 3 and the drain electrode 4. The BB direction is a direction parallel to the direction in which the tooth portion of the source electrode 3 extends in the tip region of the source electrode 3 (hereinafter referred to as “source tip region”). The CC direction is a direction parallel to the direction in which the tooth portion of the drain electrode 4 extends in the tip region of the drain electrode 4 (hereinafter referred to as “drain tip region”).

  Each cut surface along the AA direction, the BB direction, and the CC direction has substantially the same basic structure, and as will be described in detail later, the distance between regions appearing on each cut surface is small. There are different places.

  As shown in FIG. 2, the nitride semiconductor device 1 includes a carrier supply layer 22, a nitride semiconductor layer 2 in which a carrier traveling layer 21 that forms a heterojunction with the carrier supply layer 22, and a nitride semiconductor layer 2 on the nitride semiconductor layer 2. The HEMT includes a source electrode 3, a drain electrode 4, and a gate electrode 5 disposed on the nitride semiconductor layer 2. The insulating film 7 is disposed so as to cover the source electrode 3 and the drain electrode 4, and the gate electrode 5 is disposed so as to fill the opening formed in the insulating film 7. An interlayer insulating film 8 is disposed on the gate electrode 5 and the insulating film 7, the source electrode wiring 31 is connected to the source electrode 3 through the openings formed in the interlayer insulating film 8, and the drain electrode wiring 41 is drained. It is connected to the electrode 4.

  The nitride semiconductor device 1 further includes a gate field plate 50 that is electrically connected to the gate electrode 5 and a source field plate 30 that is electrically connected to the source electrode 3. The curvature of the depletion layer at the drain side end of the gate electrode 5 is controlled by the gate field plate 50 and the source field plate 30 disposed between the gate electrode 5 and the drain electrode 4. Concentration of the bias electric field concentrated on the portion (hereinafter referred to as “drain side end portion”) is alleviated.

  As shown in FIG. 2, the gate field plate 50 is disposed on the insulating film 7 between the gate electrode 5 and the drain electrode 4 so as to be connected to the upper end portion of the gate electrode 5. The source field plate 30 is electrically connected to the source electrode 3 via the source electrode wiring 31, and the nitride semiconductor layer is interposed between the gate field plate 50 and the drain electrode 4 via the insulating film 7 and the interlayer insulating film 8. 2 is disposed on the interlayer insulating film 8 so as to face the 2. In the example shown in FIG. 2, the region extending to the drain electrode side of the source electrode wiring 31 functions as the source field plate 30. In FIG. 1, the gate field plate 50 and the source field plate 30 are not shown.

  As shown in FIG. 2, the buffer layer 11 is disposed on the substrate 10, and the nitride semiconductor layer 2 is disposed on the buffer layer 11. A specific structural example of the nitride semiconductor device 1 will be described later.

  An enlarged view of the source tip region is shown in FIG. 3A, and an enlarged view of the drain tip region is shown in FIG. 3A and 3B, the source electrode 3, the drain electrode 4, the gate electrode 5, the gate field plate 50, and the source field plate 30 are illustrated through the upper layer. For example, the gate electrode 5 and the gate field plate 50 are illustrated through the source electrode wiring 31.

  The shapes of the tips of the source electrode 3, the drain electrode 4, and the source field plate 30 are semicircular. In the source tip region, the outer edge of the handle portion between the tooth portions of the drain electrode 4 is recessed in a semicircular shape along the tip of the source electrode 3. Similarly, in the drain tip region, the outer edge of the handle portion between the tooth portions of the source electrode 3 is recessed in a semicircular shape along the tip of the drain electrode 4. For this reason, the gate electrode 5 disposed between the source electrode 3 and the drain electrode 4 has an arc shape in the tip region. Similarly, the gate field plate 50 and the source field plate 30 are also arc-shaped in the tip region.

As shown in FIGS. 3A and 3B, the distances L _GSa , L _GSb , and L _GSc are the distances between the source side end of the gate electrode 5 in each of the linear region, the source tip region, and the drain tip region. The distance between the source electrode 3 and the end on the gate electrode side (hereinafter referred to as “G_S distance”) L _GS . The distances L _GDa , L _GDb , and L _GDc are distances between the drain side end of the gate electrode 5 and the gate electrode side end of the drain electrode 4 in each of the straight line region, the source tip region, and the drain tip region (hereinafter referred to as the following) in referred to as "G_D distance".) is an L _GD. The distances L _GFPa , L _GFPb , and L _GFPc are distances between the drain side end of the gate electrode 5 and the drain side end of the gate field plate 50 in each of the linear region, source tip region, and drain tip region (hereinafter, "Distance between G_GF".) L _GFP . The G_GF distance L _GFP corresponds to the length of the gate field plate 50. The distances L _SFPa , L _SFPb , and L _SFPc are distances between the drain side end of the gate field plate 50 and the drain side end of the source field plate 30 in each of the straight line region, the source tip region, and the drain tip region (hereinafter, , “Distance between GF_SF”) L _SFP . The GF_SF distance L _SFP corresponds to the length of the source field plate 30.

As shown in FIGS. 3A and _3B , the _{G_S} distances L _GSb and L _GSc in the source tip region and the drain tip region are longer than the _{G_S} distance L _GSa in the linear region. Similarly, the G_D distances L _GDb and L _GDc in the source tip region and the drain tip region are longer than the G_D distance L _GDa in the straight line region. Further, the G_GF distances L _GFPb and L _GFPc in the source tip region and the drain tip region are longer than the G_GF distance L _GFPa in the linear region. Further, the GF_SF distances L _SFPb and L _SFPc in the source tip region and the drain tip region are longer than the GF_SF distance L _SFPa in the straight line region.

FIG. 4 shows an example of each distance in each of the cut surface of the straight region that is a cut surface along the AA direction and the cut surface of the tip region that is a cut surface along the BB direction and the CC direction. Show. Note that the values of the G_S distance L _GS , the G_D distance L _GD , the G_GF distance L _GFP , and the GF_SF distance L _SFP in the tip region shown in FIG. 4 are the values of the tips of the source electrode 3 and the drain electrode 4. The distance at the vertex.

In FIG. 4, _{G_S} distances L _GSb , L _GSc , G_D distances L _GDb , L _GDc , G_GF distances L _GFPb , L _GFPc , GF_SF distances L _SFPb , L _SFPc in the straight region _{G_S} distance L _GSa , G_D distance L _GDa , G_GF distance L _GFPa , GF_SF distance L _SFPa is 1.5 times as an example, but the difference between each distance is limited to 1.5 times Is not to be done. That is, the distances in the tip region need only be longer than the distances in the straight region.

  In addition to the above distances, it is preferable that the gate length of the tip region is longer than the gate length of the straight region.

  In general, when a comb-shaped electrode structure is employed, the electric field concentrates on the tip portion rather than the linear portion of the electrode. For this reason, the semiconductor device is easily destroyed.

However, in the nitride semiconductor device 1 according to the first embodiment of the present invention, the distance between the gate electrode 5 and the drain electrode 4 (G_D distance L _GD ) is greater in the source tip region and the drain tip region than in the linear region. Has a long structure. For this reason, the electric field concentration at the tip of each comb electrode is alleviated. Therefore, the nitride semiconductor device 1 has an electrode structure in which the comb-shaped source electrode 3 and drain electrode 4 are arranged in an interdigitated manner, and the electric field concentration at the tip of each comb-shaped electrode is reduced. A nitride semiconductor device can be provided. Thereby, the breakdown voltage of nitride semiconductor device 1 is improved.

  In the nitride semiconductor device 1, the drain side end portions of the gate field plate 50 and the source field plate 30 extend in the direction of the drain electrode 4 in the source tip region and the drain tip region rather than the straight region. Thereby, the electric field in the tip region is relaxed more than the straight region, and electrolytic concentration is less likely to occur.

  A specific structural example of the nitride semiconductor device 1 will be described below.

  As the substrate 10 shown in FIG. 2, a semiconductor substrate such as a silicon (Si) substrate, a silicon carbide (SiC) substrate, or a GaN substrate, or an insulator substrate such as a sapphire substrate or a ceramic substrate can be employed. For example, the manufacturing cost of the nitride semiconductor device 1 can be reduced by adopting a silicon substrate that can be easily increased in diameter as the substrate 10.

  The buffer layer 11 can be formed by an epitaxial growth method such as a metal organic chemical vapor deposition (MOCVD) method. Although the buffer layer 11 is illustrated as one layer in FIG. 2, the buffer layer 11 may be formed of a plurality of layers. For example, a multilayer buffer in which the buffer layer 11 is formed by alternately stacking first sublayers (first sublayers) made of aluminum nitride (AlN) and second sublayers (second sublayers) made of GaN. It is good. Since the buffer layer 11 is not directly related to the operation of the HEMT, the buffer layer 11 may be omitted. A structure in which the substrate 10 and the buffer layer 11 are combined can be regarded as a substrate. The structure and arrangement of the buffer layer 11 are determined according to the material of the substrate 10 and the like.

  The nitride semiconductor layer 2 includes a carrier supply layer 22 made of a first nitride semiconductor layer, and a carrier traveling layer 21 made of a second nitride semiconductor layer having a band gap energy different from that of the first nitride semiconductor layer. Have.

  The carrier traveling layer 21 disposed on the buffer layer 11 is formed by, for example, epitaxially growing non-doped GaN to which no impurity is added by a metal organic chemical vapor deposition (MOCVD) method or the like. Here, non-doped means that no impurity is intentionally added.

The carrier supply layer 22 disposed on the carrier traveling layer 21 is made of a nitride semiconductor having a band gap larger than that of the carrier traveling layer 21 and a lattice constant smaller than that of the carrier traveling layer 21. Non-doped Al _x Ga _1-x N can be adopted as the carrier supply layer 22.

  The carrier supply layer 22 is formed on the carrier traveling layer 21 by epitaxial growth using MOCVD or the like. Since the carrier supply layer 22 and the carrier traveling layer 21 have different lattice constants, piezoelectric polarization due to lattice distortion occurs. Due to the piezoelectric polarization and the spontaneous polarization of the crystal of the carrier supply layer 22, high-density carriers are generated in the carrier traveling layer 21 near the heterojunction, and a two-dimensional carrier gas layer 23 as a current path (channel) is formed.

  The source electrode 3 and the drain electrode 4 are made of a metal capable of low resistance contact (ohmic contact) with the nitride semiconductor layer 2. For example, aluminum (Al), titanium (Ti), or the like can be used for the source electrode 3 and the drain electrode 4. Alternatively, the source electrode 3 and the drain electrode 4 are formed as a laminate of Ti and Al.

  For the gate electrode 5 and the gate field plate 50, for example, nickel gold (NiAu) or the like can be employed. For the source electrode wiring 31 and the drain electrode wiring 41, for example, Al, gold (Au), copper (Cu), or the like can be employed.

<Modification>
FIG. 5 shows a nitride semiconductor device 1 according to a modification of the first embodiment of the present invention. In the nitride semiconductor device 1 shown in FIG. 5, the source electrode 3 and the drain electrode 4 are embedded in the opening formed in the nitride semiconductor layer 2. The lower ends of the source electrode 3 and the drain electrode 4 are deeper than the position of the two-dimensional carrier gas layer 23, and the source electrode 3 and the drain electrode 4 are in ohmic contact with the carrier traveling layer 21. In the source electrode 3 and the drain electrode 4 having a digging ohmic structure as shown in FIG. 5, when a nitride semiconductor film such as an AlGaN film that hardly flows current is used for the carrier supply layer 22, the source in contact with the carrier supply layer 22 is used. The electric field concentrates on the side surfaces of the electrode 3 and the drain electrode 4.

However, the distance L _GD between G_D between the gate electrode 5 and the drain electrode 4 is longer than the straight line region in the source tip region and the drain tip region where the electric field tends to concentrate, so that the nitride semiconductor device 1 is destroyed due to the electric field concentration. Can be prevented.

(Second Embodiment)
The nitride semiconductor device 1 according to the second embodiment of the present invention differs from that shown in FIG. 2 in that it further includes a protective electrode 6 disposed between the drain electrode 4 and the gate electrode 5 as shown in FIG. Other configurations are the same as those of the nitride semiconductor device 1 shown in FIG.

  The protective electrode 6 has a structure similar to that of the gate electrode 5, for example, and the protective electrode 6 is disposed so as to fill the opening formed in the insulating film 7. The lower end of the protective electrode 6 is in contact with the upper surface of the nitride semiconductor layer 2, and the outer edge portion of the upper end is disposed on the insulating film 7. The drain side of the outer edge portion disposed on the insulating film 7 of the protective electrode 6 functions as a field plate (hereinafter referred to as “Z field plate 60”). The protective electrode 6 is electrically connected to, for example, the source electrode 3 or the gate electrode 5.

  In the nitride semiconductor device 1 shown in FIG. 6, the source field plate 30 is a portion that extends to the drain electrode 4 side from the drain side end of the Z field plate 60 of the source electrode wiring 31.

  An enlarged view of the source tip region of the nitride semiconductor device 1 shown in FIG. 6 is shown in FIG. 7A, and an enlarged view of the drain tip region is shown in FIG. 7B.

As shown in FIGS. 7A and 7B, the distances L _GZa , L _GZb , and L _GZc are the drain side end portions of the gate electrode 5 in each of the linear region, the source tip region, and the drain tip region. The distance between the gate electrode side end of the protective electrode 6 (hereinafter referred to as “G_Z distance”) L _GZ . The distances L _ZFPa , L _ZFPb , and L _ZFPc are distances between the drain side end of the protective electrode 6 and the drain side end of the Z field plate 60 in each of the linear region, the source tip region, and the drain tip region (hereinafter, "Distance between Z_ZF".) L _ZFP . The Z_ZF distance L _ZFP corresponds to the length of the Z field plate 60.

The distances L _SFPa , L _SFPb , and L _SFPc are distances between the drain side end of the Z field plate 60 and the drain side end of the source field plate 30 in each of the straight line region, the source tip region, and the drain tip region ( Hereinafter, it is referred to as “distance between ZF_SF”). ZF_SF distance L _SFP corresponds to the length of the source field plate 30.

Other distances are the same as those in FIGS. 3A and 3B. That is, the distances L _GSa , L _GSb , and L _GSc are _{G_S} between the source side end of the gate electrode 5 and the gate electrode side end of the source electrode 3 in each of the linear region, the source tip region, and the drain tip region. The distance _LGS . The distances L _GDa , L _GDb , and L _GDc are the distances G_D between the drain side end of the gate electrode 5 and the gate electrode side end of the drain electrode 4 in each of the linear region, source tip region, and drain tip region. Distance L _GD . The distances L _GFPa , L _GFPb , and L _GFPc are G_GF distances L _GFP between the drain side end of the gate electrode 5 and the drain side end of the gate field plate 50 in each of the linear region, source tip region, and drain tip region. And corresponds to the length of the gate field plate 50.

As shown in FIGS. 7A and 7B, the G_Z distances L _GZb and L _GZc between the gate electrode 5 and the protective electrode 6 in the source tip region and the drain tip region are the G_Z distance L in the linear region. _Longer than _GZa . The Z_ZF distances L _ZFPb and L _ZFPc between the drain side end of the protective electrode 6 and the drain side end of the Z field plate 60 in the source tip region and the drain tip region are _larger than the Z_ZF distance L _ZFPa in the linear region. long. Furthermore, the source tip region and ZF_SF distance between the drain-side edge of the drain side end of the source field plate 30 of the Z field plate 60 in the drain tip regions L _SFPb, L _SFPc, from ZF_SF distance L _SFPA in the linear region Also long.

Further, similarly to the nitride semiconductor device 1 shown in FIGS. 3A and 3B, in the nitride semiconductor device 1 shown in FIGS. 7A and 7B, the source tip region and The _{G_S} distances L _GSb and L _GSc in the drain tip region are longer than the _{G_S} distance L _GSa in the straight line region. Further, G_d distance L _GDb in the source tip region and drain tip regions, L _GDc is longer than G_d distance L _GDa in the linear region, G_GF distance L _GFP-B in the source tip region and drain tip regions, L _GFPc is longer than G_GF distance L _GFPa in the linear region.

An example of each distance shown in FIGS. 7A and 7B is shown in FIG. FIG. 8 shows G-S distances L _GSb , L _GSc , G_D distances L _GDb , L _GDc , G_GF distances L _GFPb , L _GFPc , ZF_SF distances L _SFPb , L _SFPc , G_Z distances L _GZb , L _GZc , Z_ZF distances L _ZFPb , L _ZFPc are _{G_S} distances L _GSa , G_D distances L _GDa , G_GF distances L _GFPa , ZF_SF distances L _SFPa , G_Z distances L _GZa , Z_ZF distances The case where the distance L _ZFPa is 1.5 times is shown as an example. However, the difference between the distances is not limited to 1.5 times. That is, the distances in the tip region need only be longer than the distances in the straight region.

The nitride semiconductor device 1 according to the second embodiment has a structure in which the distance between the gate electrode 5 and the drain electrode 4 (G_D distance L _GD ) is longer in the source tip region and the drain tip region than in the linear region. For this reason, the electric field concentration in the front-end | tip part of each comb-shaped electrode can be eased. According to the nitride semiconductor device 1 according to the second embodiment, since the protective electrode 6 is disposed between the gate electrode 5 and the drain electrode 4, the electric field concentration at the drain side end of the gate electrode 5 is further alleviated. Is done.

In the nitride semiconductor device 1 according to the second embodiment, the drain side end portions of the gate field plate 50, the source field plate 30, and the Z field plate 60 are located in the source tip region and the drain tip region rather than the straight region. It extends in the direction of the electrode 4. Further, the distance between the gate electrode 5 and the protective electrode 6 (G_Z distance L _GZ ) is longer in the source tip region and the drain tip region than in the linear region. Thereby, the electric field in the tip region is relaxed more than the electric field in the straight region, and the electric field concentration in the tip region is less likely to occur.

  In the nitride semiconductor device 1 shown in FIG. 6, the concentration of the bias electric field concentrated on the drain side end of the gate electrode 5 is alleviated by the protective electrode 6, and the drain side end of the protective electrode 6 is reduced by the Z field plate 60. The curvature of the depletion layer is controlled, and the concentration of the bias electric field concentrated on the drain side end of the protective electrode 6 is alleviated.

  The protective electrode 6 can also be configured to function as a diode when the potential of the source electrode 3 is higher than the potential of the drain electrode 4 so that a current flows from the source electrode 3 to the drain electrode 4. For example, a Schottky junction is formed between the protective electrode 6 and the nitride semiconductor layer 2.

  Further, the mirror capacitance of the nitride semiconductor device 1 can be reduced by electrically connecting the protective electrode 6 to the source electrode 3. This is because, equivalently, the FET having the protective electrode 6 as the gate electrode and the FET having the gate electrode 5 as the gate electrode are cascode-connected. In other words, since the protective electrode 6 is disposed between the gate electrode 5 and the drain electrode 4, the capacitance between the gate electrode 5 and the drain electrode 4 is reduced. Thereby, high-frequency operation of the nitride semiconductor device 1 becomes possible.

  Others are substantially the same as those in the first embodiment, and redundant description is omitted.

(Third embodiment)
In the nitride semiconductor device 1 according to the first and second embodiments, the tooth portion and the handle portion of the source electrode 3 are arranged at the same wiring level, and the handle portion of the source electrode 3 is the drain electrode 4 in the drain tip region. Is arranged adjacent to the same wiring level as the tooth portion.

  In the nitride semiconductor device 1 according to the third embodiment, the tooth portion and the handle portion of the source electrode 3 are arranged at different wiring levels. Specifically, like the nitride semiconductor device 1 shown in FIG. 8, the handle portion of the source electrode 3 and the connection portion between the tooth portion and the handle portion indicated by the broken line are the tooth portion and the drain electrode of the source electrode 3. 4 is arranged at a different wiring level. The handle portion of the source electrode 3 is disposed on the interlayer insulating film 8 in the same manner as the source field plate 30, for example. Since the handle portion of the source electrode 3 is not close to the tip of the drain electrode 4, the outer edge of the handle portion of the source electrode 3 does not need to be recessed in a semicircular shape.

  The tooth portion of the source electrode 3 and the tooth portion of the drain electrode 4 are arranged in a cross finger shape at the same wiring level. Note that the position of the tip of the drain electrode 4 and the position of the tip of the source electrode 3 in the tip region are preferably arranged on a straight line along a direction perpendicular to the direction in which the tooth portion extends. The effect of reducing the capacitance between the gate electrode 5 and the source electrode 3 and suppressing the current concentration in the vicinity of the drain electrode are exhibited.

  Similar to the nitride semiconductor device 1 shown in FIG. 6, the protective electrode 6 may be disposed between the drain electrode 4 and the gate electrode 5.

  According to the nitride semiconductor device 1 according to the third embodiment, electric field concentration in the tip region can be suppressed and the capacitance between the gate electrode 5 and the source electrode 3 can be reduced. Others are substantially the same as those of the first and second embodiments, and redundant description is omitted.

(Other embodiments)
As described above, the present invention has been described according to the first to third embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, the protective electrode 6 may be connected to a fixed electrode that supplies a fixed voltage other than the source electrode 3 or the gate electrode 5. That is, by setting the protective electrode 6 to a constant potential that can be seen as GND in an alternating manner, an effect of reducing the concentration of the bias electric field at the drain side end of the gate electrode 5 can be obtained. The protective electrode 6 may be connected to GND.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

DESCRIPTION OF SYMBOLS 1 ... Nitride semiconductor device 2 ... Nitride semiconductor layer 3 ... Source electrode 4 ... Drain electrode 5 ... Gate electrode 6 ... Protective electrode 7 ... Insulating film 8 ... Interlayer insulating film 10 ... Substrate 11 ... Buffer layer 21 ... Carrier running layer 22 ... Carrier supply layer 23 ... Two-dimensional carrier gas layer 30 ... Source field plate 31 ... Source electrode wiring 41 ... Drain electrode wiring 50 ... Gate field plate 60 ... Z field plate

Claims (5)

A nitride semiconductor layer in which a carrier supply layer and a carrier travel layer that forms a heterojunction with the carrier supply layer are stacked;
An insulating film disposed on the nitride semiconductor layer;
A comb-shaped source electrode having a plurality of tooth portions disposed on the nitride semiconductor layer;
A comb-shaped drain electrode having a plurality of teeth disposed on the nitride semiconductor layer in a cross-finger shape with the source electrode;
A gate electrode disposed on the nitride semiconductor layer between the source electrode and the drain electrode;
A gate field plate electrically connected to the gate electrode and disposed on the insulating film between the gate electrode and the drain electrode;
The distance between the drain side end of the gate field plate and the drain side end of the gate electrode is greater than the linear region of the tooth portion of the source electrode and the drain electrode than the tooth portion of the source electrode and the drain electrode. A nitride semiconductor device characterized by being long in the tip region.   The nitride semiconductor device according to claim 1, wherein the source electrode and the drain electrode have a semicircular tip shape.   3. The nitride according to claim 1, wherein at least a part of the source electrode and the drain electrode is embedded in an opening provided in the carrier supply layer and is in contact with the carrier traveling layer. Semiconductor device. A protective electrode disposed on the insulating film between the drain electrode and the gate electrode;
A Z field plate electrically connected to the protective electrode and disposed on the insulating film between the protective electrode and the drain electrode;
Both the distance between the gate electrode and the protective electrode and the distance between the drain side end of the Z field plate and the drain side end of the protective electrode are longer in the tip region than in the straight region. The nitride semiconductor device according to any one of claims 1 to 3, wherein   5. The nitride semiconductor device according to claim 1, wherein a distance between the source electrode and the gate electrode is longer in the tip region than in the straight region.

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