JP5898065B2 - シリコンウエハの前面上にグリッド電極を形成する方法 - Google Patents

シリコンウエハの前面上にグリッド電極を形成する方法 Download PDF

Info

Publication number
JP5898065B2
JP5898065B2 JP2012512017A JP2012512017A JP5898065B2 JP 5898065 B2 JP5898065 B2 JP 5898065B2 JP 2012512017 A JP2012512017 A JP 2012512017A JP 2012512017 A JP2012512017 A JP 2012512017A JP 5898065 B2 JP5898065 B2 JP 5898065B2
Authority
JP
Japan
Prior art keywords
metal paste
paste
glass frit
silver
finger lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012512017A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012527780A5 (https=
JP2012527780A (ja
Inventor
デイビッド アンダーソン ラッセル
デイビッド アンダーソン ラッセル
ウォーレン ハング ケネス
ウォーレン ハング ケネス
シー−ミン カオ
シー−ミン カオ
ラウディシオ ジョバンナ
ラウディシオ ジョバンナ
チェン−ナン リン
チェン−ナン リン
チュン−クウェイ ウー
チュン−クウェイ ウー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2012527780A publication Critical patent/JP2012527780A/ja
Publication of JP2012527780A5 publication Critical patent/JP2012527780A5/ja
Application granted granted Critical
Publication of JP5898065B2 publication Critical patent/JP5898065B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2012512017A 2009-05-20 2010-05-20 シリコンウエハの前面上にグリッド電極を形成する方法 Active JP5898065B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17988509P 2009-05-20 2009-05-20
US61/179,885 2009-05-20
PCT/US2010/035522 WO2010135496A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (3)

Publication Number Publication Date
JP2012527780A JP2012527780A (ja) 2012-11-08
JP2012527780A5 JP2012527780A5 (https=) 2013-07-04
JP5898065B2 true JP5898065B2 (ja) 2016-04-06

Family

ID=42271964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512017A Active JP5898065B2 (ja) 2009-05-20 2010-05-20 シリコンウエハの前面上にグリッド電極を形成する方法

Country Status (7)

Country Link
US (2) US8486826B2 (https=)
EP (1) EP2433304A1 (https=)
JP (1) JP5898065B2 (https=)
KR (1) KR101322072B1 (https=)
CN (1) CN102428567B (https=)
TW (1) TWI504011B (https=)
WO (1) WO2010135496A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010117788A1 (en) * 2009-03-30 2010-10-14 E. I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
WO2010135496A1 (en) * 2009-05-20 2010-11-25 E. I. Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
JP5482911B2 (ja) * 2010-12-24 2014-05-07 信越化学工業株式会社 太陽電池素子の製造方法
CA2833389C (en) 2011-04-18 2022-01-11 Diamir, Llc Mirna-based universal screening test (ust)
JP6027171B2 (ja) * 2011-07-04 2016-11-16 株式会社日立製作所 封着用ガラスフリット、封着用ガラスペースト、導電性ガラスペースト、およびそれらを利用した電気電子部品
CN103165689B (zh) * 2011-12-12 2015-10-28 茂迪股份有限公司 太阳能电池及其制造方法
JP5583196B2 (ja) * 2011-12-21 2014-09-03 パナソニック株式会社 薄膜太陽電池およびその製造方法
CN103171260A (zh) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 一种太阳能电池电极的配套网板及其印刷方法
EP2839510A4 (en) * 2012-04-18 2015-12-02 Heraeus Precious Metals North America Conshohocken Llc PROCESS FOR PRINTING SOLAR CELL CONTACTS
KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
TW201511300A (zh) * 2013-09-11 2015-03-16 行政院原子能委員會核能研究所 具有摻雜矽或硼原子之鋁金屬電極之製備方法
KR20150035189A (ko) 2013-09-27 2015-04-06 엘지전자 주식회사 태양 전지
KR101859017B1 (ko) * 2015-12-02 2018-05-17 삼성에스디아이 주식회사 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지
CN105590663B (zh) * 2016-01-07 2017-09-22 清华大学 无铅无铋导电银浆、银栅线的制备方法及硅太阳能电池
JP6810986B2 (ja) * 2016-07-14 2021-01-13 アートビーム株式会社 太陽電池および太陽電池の製造方法
WO2018174898A1 (en) 2017-03-24 2018-09-27 Heraeus Precious Metals North America Conshohocken Llc Low etching and non-contact glasses for electroconductive paste compositions
CN108110087B (zh) * 2017-12-20 2019-12-17 江苏日托光伏科技股份有限公司 一种低线宽mwt硅太阳能电池的制备方法
US20190280133A1 (en) 2018-03-09 2019-09-12 Heraeus Precious Metals North America Conshohocken Llc Seed layer for improved contact on a silicon wafer
KR102576589B1 (ko) * 2018-09-05 2023-09-08 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이를 포함하는 태양 전지 패널
CN109539604B (zh) * 2019-01-17 2020-05-29 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层结构
CN109631353B (zh) * 2019-01-17 2020-05-08 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层制法及其集热管制法
US20210257505A1 (en) * 2020-02-18 2021-08-19 Dupont Electronics, Inc. Solar cell and method for manufacturing the same
JP2021022735A (ja) * 2020-09-21 2021-02-18 アートビーム株式会社 太陽電池および太陽電池の製造方法
CN120224824A (zh) * 2023-10-08 2025-06-27 西安隆基乐叶光伏科技有限公司 一种太阳能电池的制作方法、太阳能电池和电池串

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0374244B1 (en) 1988-06-10 1994-09-28 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
ES2115671T3 (es) * 1991-06-11 1998-07-01 Ase Americas Inc Celula solar mejorada y metodo para la fabricacion de la misma.
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
EP2058865B1 (en) * 2006-08-31 2016-12-14 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, electrode forming method, and solar cell fabricating method
EP2104147B1 (en) 2006-12-26 2015-04-15 Kyocera Corporation Solar cell element and solar cell element manufacturing method
KR101543046B1 (ko) 2007-08-31 2015-08-07 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 태양 전지용 층상 컨택 구조
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell
US8759144B2 (en) * 2007-11-02 2014-06-24 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers
JP2009193993A (ja) * 2008-02-12 2009-08-27 Mitsubishi Electric Corp 太陽電池電極の製造方法および太陽電池電極
US8151786B2 (en) * 2009-04-30 2012-04-10 The Brinkmann Corporation Gas cooking appliance having an automatic gas shutoff mechanism
WO2010135496A1 (en) * 2009-05-20 2010-11-25 E. I. Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer

Also Published As

Publication number Publication date
US20100294359A1 (en) 2010-11-25
US9054239B2 (en) 2015-06-09
CN102428567B (zh) 2015-01-07
US20130276881A1 (en) 2013-10-24
EP2433304A1 (en) 2012-03-28
CN102428567A (zh) 2012-04-25
TWI504011B (zh) 2015-10-11
US8486826B2 (en) 2013-07-16
JP2012527780A (ja) 2012-11-08
TW201110398A (en) 2011-03-16
WO2010135496A1 (en) 2010-11-25
KR101322072B1 (ko) 2013-10-28
KR20120012989A (ko) 2012-02-13

Similar Documents

Publication Publication Date Title
JP5898065B2 (ja) シリコンウエハの前面上にグリッド電極を形成する方法
KR101322142B1 (ko) 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법
US20100243048A1 (en) Metal pastes and use thereof in the production of silicon solar cells
JP2013512571A (ja) 不動態化エミッタおよび背面接点シリコン太陽電池の銀裏面電極の形成方法
JP2013512546A (ja) アルミニウムペーストと不動態化エミッタおよび背面接点シリコン太陽電池の製造においてのその使用
US20110240124A1 (en) Metal pastes and use thereof in the production of silicon solar cells
JP2013513974A (ja) Ｍｗｔシリコン太陽電池の製造のプロセス
JP2013519243A (ja) Ｍｗｔシリコン太陽電池の製造方法
US20130056060A1 (en) Process for the production of lfc-perc silicon solar cells
JP2012522355A (ja) 金属ペーストおよびシリコン太陽電池の製造におけるそれらの使用
KR101322149B1 (ko) 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법
US20120160314A1 (en) Process for the formation of a silver back anode of a silicon solar cell
US20130074916A1 (en) Process for the production of a mwt silicon solar cell

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130515

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130515

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131203

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140303

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140310

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140403

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140410

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140507

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140514

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140603

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141007

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150107

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150209

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150407

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150707

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151007

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160303

R150 Certificate of patent or registration of utility model

Ref document number: 5898065

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250