JP5891013B2 - Ultraviolet irradiation apparatus and substrate processing apparatus - Google Patents

Description

  The present invention relates to an ultraviolet irradiation apparatus and a substrate processing apparatus.

  A fine pattern such as a wiring pattern or an electrode pattern is formed on a glass substrate constituting a display panel such as a liquid crystal display. In general, such a pattern is formed by a technique such as photolithography. In the photolithography method, a step of applying a resist film to a glass substrate, a step of exposing the resist film, a step of developing the resist film after exposure, and a step of irradiating the developed resist film with ultraviolet rays are performed.

  In the ultraviolet irradiation process, for example, an ultraviolet irradiation apparatus is used that accommodates a substrate in a chamber and irradiates the substrate with ultraviolet rays while transporting the substrate (see, for example, Patent Document 1). Such an ultraviolet irradiation device is required to have a dehydrated and deoxygenated environment in the substrate transfer path in the chamber.

JP 2011-96839 A

  However, in the above prior art, the inside of the chamber (processing chamber) is evacuated by using a vacuum pump to maintain the dehydration and deoxygenation environment as described above. There has been a problem that the cost of the apparatus becomes high or the apparatus becomes large and the installation area increases.

  The present invention has been made in view of such problems, and an object of the present invention is to provide an ultraviolet irradiation apparatus and a substrate processing apparatus that achieve downsizing and cost reduction.

  In order to achieve the above object, an ultraviolet irradiation apparatus of the present invention includes a processing chamber that performs ultraviolet irradiation on a substrate, a heating mechanism that heats at least the substrate in the processing chamber, and the processing chamber in a deoxygenated and dehydrated state. A gas supply unit configured to supply gas into the processing chamber so as to be held; and a substrate carry-in port for carrying the substrate into the ultraviolet irradiation apparatus and the processing chamber. And a preliminary chamber that maintains the processing chamber in a predetermined atmosphere by being communicated with each other.

  According to the ultraviolet irradiation apparatus of the present invention, the provision of the spare chamber prevents gas and oxygen from being mixed into the processing chamber when the substrate is carried in, and the substrate supply unit allows gas to enter the processing chamber and the preliminary chamber communicating with the processing chamber. Can stably maintain the processing chamber in a predetermined atmosphere. Therefore, since a vacuum pump can be dispensed with, the apparatus can be reduced in size and cost.

The ultraviolet irradiation apparatus preferably includes a plurality of the spare chambers.
According to this configuration, the atmosphere in the processing chamber can be stably maintained at a predetermined value by changing the atmosphere in the plurality of preliminary chambers in stages.

Moreover, in the said ultraviolet irradiation device, it is preferable that the said gas supply part supplies an inert gas in the said process chamber.
According to this configuration, by supplying an inert gas into the processing chamber, the processing chamber can be maintained in a deoxygenated and dehydrated state.

Moreover, in the said ultraviolet irradiation device, it is preferable that the said gas supply part supplies nitrogen gas as said inert gas.
By supplying nitrogen gas in this way, the inside of the processing chamber can be satisfactorily kept in a deoxygenated and dehydrated state.

In the ultraviolet irradiation apparatus, it is preferable that the internal pressure in the plurality of preliminary chambers is set to gradually decrease from the processing chamber side toward the substrate carry-in port side.
According to this configuration, the atmosphere in the processing chamber can be stabilized by setting the internal pressures in the plurality of preliminary chambers to gradually decrease from the processing chamber side toward the substrate carry-in side.

The ultraviolet irradiation apparatus preferably further includes a substrate moving mechanism for moving the substrate between the preliminary chamber and the processing chamber.
According to this configuration, the time required to pass through the apparatus can be shortened by moving the substrate between the preliminary chamber and the processing chamber.

Moreover, in the said ultraviolet irradiation apparatus, the said heating mechanism contains the plate heated in the state holding the said board | substrate, It is preferable that a part of said board | substrate movement mechanism moves in the groove part provided in the said plate. .
According to this configuration, the movement time can be shortened by the substrate moving mechanism moving in the groove portion of the plate. In addition, since a part of the substrate moving mechanism is provided in the groove in the plate, it is possible to prevent foreign matters such as dust from adhering to the substrate.

Moreover, in the said ultraviolet irradiation apparatus, it is preferable that the said heating mechanism also heats the said board | substrate in the said reserve chamber.
According to this configuration, since the substrate can be preheated in the preliminary chamber, the substrate can be heated to a predetermined temperature in the processing chamber in a short time.

Moreover, in the said ultraviolet irradiation device, it is preferable that the said preliminary | backup chamber has a circulation mechanism which circulates internal atmosphere. Note that a circulation mechanism may be provided in the processing chamber.
According to this configuration, since the atmosphere in the spare room is circulated by the circulation mechanism, the atmosphere in the spare room can be stabilized.

Moreover, in the said ultraviolet irradiation device, it is preferable that the said circulation mechanism circulates the said internal atmosphere using a HEPA filter.
According to this configuration, the internal atmosphere can be circulated in a state in which the foreign matter in the preliminary chamber is removed by using the HEPA filter.

In the ultraviolet irradiation apparatus, it is preferable that the preliminary chamber is also provided between the substrate carry-out port for carrying out the substrate from the ultraviolet irradiation apparatus and the processing chamber.
According to this configuration, it is possible to prevent oxygen and moisture from being mixed into the processing chamber when the substrate is unloaded from the substrate carry-out port, thereby further stabilizing the atmosphere in the processing chamber.

  The substrate processing apparatus of the present invention includes a coating apparatus that performs a processing liquid coating process on a substrate, a developing apparatus that performs a developing process of the processing liquid applied to the substrate, and an ultraviolet irradiation apparatus that performs an ultraviolet irradiation process on the substrate. And a related apparatus that performs processing related to the coating process, the development process, and the ultraviolet irradiation process, and the substrate is serially connected between the coating apparatus, the developing apparatus, the ultraviolet irradiation apparatus, and the related apparatus. Is a substrate processing apparatus for transporting the substrate, wherein the ultraviolet irradiation apparatus is used as the ultraviolet irradiation apparatus.

  According to the substrate processing apparatus of the present invention, since the ultraviolet irradiation apparatus which is reduced in size and cost is used, the substrate processing apparatus itself can be provided with a low cost, a small size, and a high reliability.

  According to the present invention, size reduction and cost reduction can be achieved.

The top view which shows a substrate processing apparatus. The top view which shows a structure when a ultraviolet-ray processing unit is seen from the + Z side. The side view which shows a structure when a ultraviolet-ray processing unit is seen from the + Y side. Sectional drawing of an ultraviolet-ray processing unit. The principal part expanded sectional view of FIG.

  Embodiments of the present invention will be described below with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction.

Hereinafter, embodiments of the ultraviolet irradiation device of the present invention and a substrate processing apparatus including the same will be described.
FIG. 1 is a plan view showing a substrate processing apparatus SPA according to the present embodiment. The substrate processing apparatus SPA includes, for example, a loader / unloader LU, a coating / development processing unit CD, and an interface unit IF arranged in a line in the X direction. The substrate processing apparatus SPA has a configuration in which a coating / development processing unit CD is disposed between a loader / unloader LU and an interface unit IF.

(Loader / Unloader)
The loader / unloader LU is a part that carries in and out a cassette C that accommodates a plurality of substrates G. The loader / unloader LU includes a cassette standby unit 10 and a transport mechanism 11.

  The cassette standby unit 10 is disposed, for example, at the end of the substrate processing apparatus SPA on the −X side, and accommodates a plurality of cassettes C. The cassettes C accommodated in the cassette standby unit 10 are arranged in the Y direction, for example. The cassette standby section 10 has an opening (not shown) on the −X side, and the cassette C is transferred to and from the outside of the substrate processing apparatus SPA through the opening.

  The transport mechanism 11 is disposed on the + X side of the cassette standby unit 10 and transports the substrate G between the cassette C and the coating and developing processor CD. The transport mechanism 11 is configured to be movable along the Y direction, for example. Specifically, the transport mechanism 11 transports the substrate G from the loader / unloader LU to the coating and developing processor CD by moving to the -Y side. Further, the transport mechanism 11 moves to the + Y side to transport the substrate G from the coating / development processing unit CD to the loader / unloader LU.

  The transport mechanism 11 has a transport arm 12. The transfer arm 12 includes a holding unit that holds the glass substrate, and is provided to be extendable and contractable in one direction, for example. The transfer arm 12 is formed to be rotatable in the θZ direction. The transport arm 12 can be directed in the respective directions of the cassette standby unit 10 and the coating and developing unit CD by rotating in the θZ direction, for example. The transport arm 12 can access each of the cassette standby unit 10 and the coating / development processing unit CD by extending and contracting the transport arm 12.

(Coating and developing section)
The coating / development processing unit CD is a part that performs a series of processes including resist coating and development on the substrate G. The coating and developing unit CD includes a scrubber unit SR, a dehydrating bake unit DH, a coating unit CT, a prebake unit PR, an interface unit IF, a developing unit DV, an ultraviolet irradiation unit UV, and a post bake unit PB.

  The coating / development processing unit CD is divided in the Y direction, and the substrate G from the loader / unloader LU is transported in the + X direction toward the interface unit IF in the −Y side portion. ing. In the + Y side portion, the substrate G from the interface unit IF is transported in the −X direction toward the loader / unloader LU.

The scrubber unit SR is connected downstream of the loader / unloader LU, and is a unit that cleans the substrate G. The scrubber unit SR has a dry cleaning device 41, a wet cleaning device 42 and an air knife device 43. Conveyor mechanisms CV1 and CV2 are provided on the −X side of the dry cleaning device 41 and the + X side of the air knife device 43, respectively.
The conveyor mechanisms CV1 and CV2 are provided with a belt mechanism (not shown) for transporting the substrate G.

  The dry cleaning apparatus 41 removes organic substances on the substrate G by, for example, irradiating the substrate G with ultraviolet rays such as an excimer laser. The wet cleaning device 42 has a scrubbing brush (not shown), for example. The wet cleaning device 42 cleans the substrate G using the cleaning liquid and the scrubbing brush. The air knife device 43 has, for example, an air knife injection mechanism (not shown). The air knife device 43 forms an air knife on the substrate G using an air knife injection mechanism, and removes impurities on the substrate G.

  The dewatering bake unit DH is connected to the downstream side of the scrubber unit SR and is a unit for dewatering the substrate G. The dehydration bake unit DH includes a heating device 44 and a cooling device 45. The heating device 44 and the HMDS device 46 are arranged in a state of being stacked in the Z direction. A conveyor mechanism CV3 is provided at a position overlapping the heating device 44 and the HMDS device 46 as viewed in the Z direction, and a conveyor mechanism CV4 is provided at a position overlapping the cooling device 45 as viewed in the Z direction. A transport mechanism TR <b> 1 that transports the substrate G is provided between the heating device 44 and the HMDS device 46 and the cooling device 45. The transport mechanism TR1 can have the same configuration as the transport mechanism 11 provided in the loader / unloader LU, for example.

  The heating device 44 is configured to have a heater in a chamber that can accommodate the substrate G, for example. For example, the heating device 44 is arranged in a plurality of stages in the Z direction. The heating device 44 heats the substrate G at a predetermined temperature. The HMDS apparatus 46 is an apparatus that improves the adhesion between the resist film applied to the substrate G and the substrate G in the coating unit CT by applying HMDS gas to the substrate G to perform a hydrophobic treatment. The cooling device 45 has a temperature control mechanism in a chamber that can accommodate the substrate G, for example, and cools the substrate G to a predetermined temperature.

  The coating unit CT is connected downstream of the dewatering bake unit DH and forms a resist film in a predetermined region on the substrate G. The coating unit CT includes a coating device 47, a reduced pressure drying device 48, and a peripheral edge removing device 49. The coating device 47 is a device that coats a resist film on the substrate G. As the coating device 47, for example, a rotary coating device, a non-spin coating device, a slit nozzle coating device, or the like is used. These various coating devices may be replaceable. The reduced-pressure drying device 48 dries the surface of the substrate G after the resist film is applied. The peripheral edge removing device 49 is an apparatus for removing the resist film applied to the peripheral edge of the substrate G and adjusting the shape of the resist film.

  The pre-bake unit PR is a unit that is connected downstream of the coating unit CT and performs pre-bake processing on the substrate G. The prebake unit PR has a heating device 50 and a cooling device 51. The heating device 50 and the cooling device 51 are arranged along the Y direction so as to sandwich the transport mechanism TR2.

The development unit DV is connected to the −X side of the cooling device 51 of the pre-bake unit PR, and performs development processing of the substrate G after exposure. The developing unit DV has a developing device 55, a rinsing device 56, and an air knife device 57. The developing device 55 supplies a developing solution to the substrate G to perform development processing. The rinsing device 56 supplies a rinsing liquid to the developed substrate G and cleans the substrate G. The air knife device 57 forms an air knife on the substrate G, and dries the substrate G.
A conveyor mechanism CV9 is provided on the + X side of the developing device 55, and a conveyor mechanism CV10 is provided on the -X side of the air knife device 57.

  The ultraviolet processing unit (ultraviolet irradiation device) UV is connected to the downstream side of the developing unit DV, and irradiates the developed substrate G with ultraviolet rays such as i-line.

  The post-bake unit PB is connected to the downstream side of the ultraviolet processing unit UV, and bakes the substrate G after the ultraviolet processing. The post bake unit PB includes a heating device 59 and a cooling device 60. The heating device 59 performs post-baking on the substrate G after development. The cooling device 60 cools the post-baked substrate G.

  The interface unit IF is a part connected to the exposure apparatus EX. The interface unit IF includes a buffer device 52, a transport mechanism TR3, conveyor mechanisms CV7 and CV8, and a peripheral exposure device EE. The buffer device 52 is disposed on the + X side of the transport mechanism TR2 of the prebake unit PR. On the + X side of the buffer device 52, a transport mechanism TR3 is provided.

  The buffer device 52 is a device for temporarily waiting the substrate G. The buffer device 52 includes a chamber (not shown) that accommodates the substrate G, a temperature control device that adjusts the temperature in the chamber, a rotation control device that adjusts the position of the substrate G accommodated in the chamber in the θZ direction, and the like. Is provided. In the chamber of the buffer device 52, the temperature of the substrate G can be maintained at a predetermined temperature. The conveyor mechanisms CV7 and CV8 are arranged so as to sandwich the cooling device 51 of the pre-bake unit PR in the X direction.

(UV irradiation device)
FIG. 2 is a plan view showing a configuration when the ultraviolet ray processing unit UV is viewed from the + Z side. FIG. 3 is a side view showing a configuration when the ultraviolet ray processing unit UV is viewed from the + Y side. 4 is a diagram showing a cross-sectional configuration of the ultraviolet processing unit UV in FIG. 2, and FIG. 2 to 5, a part of the configuration is omitted for easy understanding of the drawings.

  As shown in FIGS. 2 and 3, the ultraviolet processing unit UV moves the first to fourth preliminary chambers 80 to 83, the ultraviolet processing chamber 84, and the substrate G between the preliminary chambers 80 to 83 and the ultraviolet processing chamber 84. And a substrate moving mechanism 85 to be moved. The first to fourth preliminary chambers 80 to 83 are for maintaining the inside of the ultraviolet processing chamber 84 in a predetermined atmosphere as will be described later.

  The first preliminary chamber 80 includes a sub chamber 110, a main chamber 111, an elevating mechanism 112, and a heating mechanism 113. The sub-chamber 110 is connected to the developing unit DV, and is for carrying the developed substrate G into the ultraviolet processing unit UV.

  The main chamber 111 has a substrate carry-in port 111a at a connection portion with the sub chamber 110, and the substrate carry-in port 111a can be opened and closed by an unillustrated opening / closing shutter. In other words, the sub-chamber 110 constitutes a substrate carry-in port (not shown) for carrying the substrate G into the ultraviolet processing unit UV. The main chamber 111 is for accommodating the substrate G in a heated state in a predetermined atmosphere described later. The main chamber 111 is connected to a circulation mechanism 150 so that the internal atmosphere is circulated.

  An exhaust duct 110a is connected to the sub-chamber 110 so that the atmosphere in the sub-chamber 110 is exhausted. Thereby, the internal pressure in the sub-chamber 110 is kept substantially constant. The sub-chamber 110 is provided with an air flow adjustment unit (not shown), and the air flow adjustment unit allows nitrogen pixels that have flowed from the main chamber 111 to the sub-chamber 110 to flow to the exhaust duct 110a. Further, even when the carry-in port of the sub chamber 110 is opened, the air flows to the exhaust duct 110a side.

  The circulation mechanism 150 discharges the atmosphere in the main chamber 111 from the one end side of the substrate G to the other end side of the substrate G by transmitting the atmosphere through the filter 151 (see FIG. 3). As the filter 151, a HEPA filter is used, and the filter 151 is circulated in the main chamber 111 in a state where foreign substances contained in the internal atmosphere are removed.

  The elevating mechanism 112 is provided so as to be movable in the Z direction. On the + Z side of the lifting mechanism 112, for example, a plurality of support pins 112a are provided. The + Z side ends of the plurality of support pins 112a are provided, for example, in the same plane parallel to the XY plane. Therefore, the substrate G is supported in parallel to the XY plane by the plurality of support pins 112a.

  The elevating mechanism 112 can elevate the substrate G along the Z direction in the main chamber 111 while supporting the substrate G accommodated in the main chamber 111. The elevating mechanism 112 is for receiving the substrate G carried from the developing unit DV by a robot arm or the like, for example. The elevating mechanism 112 can transfer the substrate G to and from the robot arm by inserting the robot arm into the gap between the raised support pins 112a.

  The heating mechanism 113 mainly includes a hot plate 114 that holds the substrate G in a heated state. A groove 114a is formed on an end surface of the hot plate 114 along the X direction so that a part of a substrate moving mechanism 85 described later can be moved (see FIG. 3). The surface temperature of the hot plate 114 is set to 100 ° C., for example.

  The second preliminary chamber 81 has a chamber 121 and a heating mechanism 123. The chamber 121 has a substrate carry-in portion 122 at a connection portion between the first preliminary chamber 80 and the main chamber 111, and the substrate carry-in portion 122 can be opened and closed by a shutter structure. The chamber 121 is for accommodating the substrate G in a heated state in a predetermined atmosphere described later. The chamber 121 is connected to the circulation mechanism 150 via the filter 151 so that the internal atmosphere is circulated.

  The heating mechanism 123 is mainly composed of a hot plate 124 that holds the substrate G in a heated state. A groove portion 124a is formed on an end surface along the X direction of the hot plate 124 so that a part of a substrate moving mechanism 85 described later can be moved (see FIG. 3). The surface temperature of the hot plate 124 is set to 100 ° C., for example.

  The third preliminary chamber 82 has a chamber 131 and a heating mechanism 133. The chamber 131 has a spacing wall 132 at a connection portion between the second preliminary chamber 81 and the chamber 111. The spacing wall 132 is formed so that the chamber 131 of the third preliminary chamber 82 and the chamber 121 of the second preliminary chamber 81 communicate with each other. The chamber 131 is for accommodating the substrate G in a heated state in a predetermined atmosphere described later. The chamber 131 is connected to the circulation mechanism 150 via the filter 151 so that the internal atmosphere is circulated.

  The heating mechanism 133 is mainly composed of a hot plate 134 that holds the substrate G in a heated state. A groove part 134a is formed on the end face of the hot plate 134 along the X direction so that a part of a substrate moving mechanism 85 described later can be moved (see FIG. 3). The surface temperature of the hot plate 134 is set to 100 ° C., for example.

  The fourth preliminary chamber 83 includes a sub chamber 140, a main chamber 141, an elevating mechanism 142, and a heating mechanism 143. The sub-chamber 140 is connected to the post bake unit PB, and is used for carrying the substrate G after the ultraviolet irradiation process into the post bake unit PB. That is, the subchamber 140 constitutes a substrate unloading port for unloading the substrate G from the ultraviolet processing unit UV.

  The main chamber 141 has a substrate carry-in port 141a at a connection portion with the sub chamber 140, and the substrate carry-in port 141a can be opened and closed by an unillustrated opening / closing shutter. The main chamber 141 accommodates the substrate G that has been subjected to the ultraviolet irradiation process. The main chamber 141 is for accommodating the substrate G in a heated state in a predetermined atmosphere described later. The chamber 141 is connected to the circulation mechanism 150 through the filter 151 so that the internal atmosphere is circulated.

  The elevating mechanism 142 is provided so as to be movable in the Z direction. On the + Z side of the lifting mechanism 142, for example, a plurality of support pins 142a are provided. The ends on the + Z side of the plurality of support pins 142a are provided, for example, in the same plane parallel to the XY plane. Therefore, the substrate G is supported in parallel with the XY plane by the plurality of support pins 142a.

  The lifting mechanism 142 can lift and lower the substrate G along the Z direction in the main chamber 141 while supporting the substrate G accommodated in the main chamber 141. The elevating mechanism 142 is for transferring the substrate G to and from the post bake unit PB via the sub chamber 140 by, for example, a robot arm. The elevating mechanism 112 can transfer the substrate G to and from the robot arm by inserting the robot arm into the gap between the raised support pins 112a.

  The heating mechanism 143 mainly includes a hot plate 144 that holds the substrate G in a heated state. On the end surface along the X direction in the hot plate 144, a groove portion 144a is formed that allows a part of a substrate moving mechanism 85 to be described later to move (see FIG. 3). The surface temperature of the hot plate 144 is set to 100 ° C., for example.

  The ultraviolet processing chamber 84 includes a chamber 161, an ultraviolet irradiation unit 162 that irradiates the substrate G in the chamber 161 with ultraviolet rays, a heating mechanism 163, and a gas supply unit 165 that supplies an inert gas (gas) into the chamber 161. doing.

  The chamber 161 accommodates a substrate G on which an ultraviolet irradiation process is performed. The ultraviolet irradiation unit 162 is attached to the upper surface of the chamber 161 so as to illuminate the substrate G in the chamber 161 with ultraviolet rays while scanning along the X direction. The chamber 161 is connected to the circulation mechanism 150 via a filter 151 in a region (not shown) so that the internal atmosphere is circulated.

  The chamber 161 has a substrate carry-in portion 161a at a connection portion with the chamber 131 of the third preliminary chamber 82, and has a substrate carry-out portion 161b at a connection portion with the main chamber 141 of the fourth preliminary chamber 83. . The substrate carry-in portion 161a and the substrate carry-out portion 161b can be opened and closed by a shutter structure.

  The ultraviolet irradiation unit 162 illuminates the ultraviolet rays irradiated on the substrate G. The ultraviolet irradiation unit 162 includes a light source 86 that emits ultraviolet light, and the light source 86 is configured to be able to scan the substrate G in the X direction. As the light source 86, a light source that irradiates ultraviolet rays (for example, i-line or the like) is used. Examples of the light source 86 include metal halide lamps, LED lamps, and high-pressure mercury lamps that irradiate ultraviolet rays having a wavelength in the range of 340 nm to 420 nm. Specifically, in this embodiment, a high-pressure mercury lamp is used. The light source 86 may be provided with an ultraviolet ray cut that transmits only ultraviolet rays having a predetermined wavelength, and the i-line may be irradiated. The light source 86 cures the resist surface formed on the substrate G by irradiating the i-line, and can prevent the resist from sagging due to heat or the like in a subsequent process of the resist.

  The heating mechanism 163 mainly includes a hot plate 164 that holds the substrate G in a heated state. A groove portion 164a is formed on an end surface of the hot plate 164 along the X direction so that a part of a substrate moving mechanism 85 described later can be moved. The surface temperature of the hot plate 164 is set to 100 ° C., for example.

  The gas supply unit 165 is for supplying an inert gas (gas) into the chamber 161. Nitrogen gas is preferably used as the inert gas, and the gas supply unit 165 maintains the low oxygen state (deoxygenated and dehydrated state) by supplying nitrogen gas into the chamber 161. Specifically, the gas supply unit 165 supplies nitrogen gas into the chamber 161 so that the oxygen concentration in the chamber 161 is about 100 ppm. The ultraviolet ray processing unit UV introduces nitrogen gas from a gas supply unit (not shown) to the spare chambers 80 to 83 other than the processing chamber 84 when the apparatus is started up, and the spare chambers 80 to 83 and the entire processing chamber 84 are disposed. Deoxygenated and dehydrated components are maintained.

  The internal pressures of the main chamber 111 of the first preliminary chamber 80, the chamber 121 of the second preliminary chamber 81, the chamber 131 of the third preliminary chamber 82, and the processing chamber 84 are set in the ultraviolet processing chamber 84 by a pressure adjusting mechanism (not shown). It is set so as to gradually become lower from the chamber 161 side toward the sub-chamber 110 side. Further, the internal pressure of the main chamber 141 of the fourth preliminary chamber 83 is set lower than the chamber 161 of the ultraviolet processing chamber 84. That is, the chamber 161 of the ultraviolet processing chamber 84 is in a positive pressure state with respect to the other chambers 111, 121, 131, 141.

Based on this configuration, the nitrogen gas supplied by the gas supply unit 165 into the chamber 161 of the ultraviolet processing chamber 84 is relatively pressured when the substrate loading unit 161a is opened when the substrate G is loaded into the chamber 161. The chamber 131 flows into the low chamber 131 and the chamber 121 communicating with the chamber 131. Further, the nitrogen gas in the chamber 121 is relatively low in the pressure of the main chamber 111 when the shutter of the substrate loading portion 122 is opened when the substrate G is loaded from the main chamber 111 of the first preliminary chamber 80 into the chamber 121. To flow into. Further, when the substrate G is unloaded from the chamber 161, the nitrogen gas in the chamber 161 flows into the main chamber 111 of the fourth preliminary chamber 83 having a relatively low pressure when the shutter of the substrate loading section 161a is opened. It has become.
Thereby, the state where oxygen concentration is low is maintained in order of the chambers 141, 131, 121, and 111 close to the chamber 161 side.

  Specifically, the oxygen concentration of the main chamber 111 of the first preliminary chamber 80 is set to about 70% when the oxygen concentration of the chamber 161 of the ultraviolet processing chamber 84 is 100%, and the oxygen concentration of the chamber 121 of the second preliminary chamber 81 is set. The oxygen concentration is set to about 80%, and the oxygen concentration in the chamber 131 of the third preliminary chamber 82 and the main chamber 141 of the fourth preliminary chamber 83 is set to about 90%.

  As shown in FIG. 4, the substrate moving mechanism 85 includes a substrate holding member 170, a guide portion 171 that guides the substrate holding member 170, and a drive mechanism 172 that drives the substrate holding member 170 along the guide portion 171. doing. The substrate holding member 170 includes a holding portion 170a that holds the back side of both end portions of the substrate G in the Y direction. The substrate holding member 170 has a size capable of holding four substrates G at the same time. The guide portion 171 is provided in a state where the chambers between the preliminary chambers 80 to 83 and the ultraviolet processing chamber 84 are communicated with each other. The substrate holding member 170 can be moved in the X direction and the Z direction by the drive mechanism 172.

  Based on such a configuration, the substrate moving mechanism 85 moves the substrate holding member 170 in the X direction so that a plurality of (up to four) substrates G can be simultaneously transferred into the chambers 111, 121, 131, 161, 141. It is movable. Thereby, the tact of the substrate G passing through the ultraviolet processing unit UV can be shortened.

  As shown in FIG. 2, in the substrate holding member 170, the holding portion 170 a can move in the groove portion 114 a of the hot plate 114, the groove portion 124 a of the hot plate 124, the groove portion 134 a of the hot plate 134, and the groove portion 144 a of the hot plate 144. Has been. Further, each of the hot plates 114, 124, 134, 144, 164 has notches 114b, 124b, 134b, 144b, 164b (hereinafter, notches 114b to 164b) communicating with the grooves 114a, 124a, 134a, 144a, 164a. Are also formed).

  The drive mechanism 172 can project the holding portion 170a of the substrate holding member 170 above the hot plates 114 to 164 through the notches 114b to 164b. On the other hand, the holding part 170a of the substrate holding member 170 holding the substrate G descends through the notches 114b to 164b and is accommodated in the hot plates 114 to 164, whereby the substrate G is placed on the corresponding hot plate. It can be mounted satisfactorily. Based on such a configuration, the substrate holding member 170 can deliver and receive the substrate G to and from the hot plates 114 to 164.

A substrate processing method using the substrate processing apparatus SPA configured as described above will be described.
First, the cassette C containing the substrate G is loaded into the cassette standby unit 10 of the loader / unloader LU. The substrate G in the cassette C is transported to the scrubber unit SR via the transport mechanism 11.

  The substrate G transported to the scrubber unit SR is transported to the dry cleaning device 41 via the conveyor mechanism CV1. The substrate G is sequentially processed with the dry cleaning device 41, the wet cleaning device 42, and the air knife device 43. The board | substrate G carried out from the air knife apparatus 43 is conveyed to the spin-drying | dehydration bake unit DH via the conveyor mechanism CV2.

  In the dehydration bake unit DH, first, the substrate G is heated by the heating device 44. The heated substrate G is transported, for example, in the Z direction, and processing with HMDS gas is performed in the HMDS apparatus 46. The substrate G after the HMDS process is transported to the cooling device 45 by the transport mechanism TR1, and the cooling process is performed. The substrate G after the cooling process is transported to the coating unit CT by the conveyor mechanism CV4.

  Thereafter, the substrate G is subjected to a resist film coating process in the coating unit CT. The substrate G after the coating process is transported to the pre-bake unit PR, the pre-bake process is performed in the heating device 50, and the cooling process is performed in the cooling device 51. The substrate G that has been processed in the pre-baking unit PR is transported to the interface unit IF by the transport mechanism TR2.

  In the interface unit IF, for example, temperature adjustment is performed in the buffer device 52, and then peripheral exposure is performed in the peripheral exposure device EE. After the peripheral exposure, the substrate G is transported to the exposure apparatus EX by the transport mechanism TR3, and an exposure process is performed. The substrate G after the exposure processing is transported to the development unit DV after being subjected to heat treatment and cooling processing.

  In the developing unit DV, the substrate G is subjected to a developing process, a rinsing process, and a drying process in order. After the drying process, the substrate G is transported to the ultraviolet processing unit UV by the conveyor mechanism CV10.

Hereinafter, a process in which one substrate G carried into the ultraviolet processing unit UV moves between the chambers will be described.
First, in the ultraviolet processing unit UV, the substrate G is transferred by a robot arm (not shown) into the main chamber 111 of the first preliminary chamber 80 via the sub chamber 110 (substrate inlet 111a). At this time, the elevating mechanism 112 moves the support pin 112a to the + Z side and lifts the substrate G to a position higher than the height of the robot arm (position on the + Z side). Thereby, the board | substrate G is delivered from the robot arm to the support pin 112a. After delivery of the substrate G, the robot arm is retracted from the main chamber 111 and the main chamber 111 is sealed.

  After receiving the substrate G, the elevating mechanism 112 lowers the support pins 112 a to place the substrate G on the hot plate 114. The substrate G is heated at 100 ° C. by the hot plate 114. In this way, by preheating the substrate G in the first preliminary chamber 80, the substrate G can be heated to a predetermined temperature in the ultraviolet processing chamber 84 in a short time. In the chamber 111, since the internal atmosphere is circulated through the filter 151 by the circulation mechanism 150, a clean atmosphere is stably maintained (see FIG. 5). FIG. 5 shows the circulation state of the internal atmosphere in the chamber 121 of the second preliminary chamber 81, but the same applies to the chamber 111 of the first preliminary chamber 80. Specifically, the internal atmosphere in the chamber 111 is guided to the circulation mechanism 150 via an atmosphere introduction portion 125 provided at the lower side of the chamber 121. Since the internal atmosphere is guided upward through the atmosphere introduction part 125, for example, when foreign substances such as sublimates are included in the internal atmosphere, the foreign substances are not provided in the atmosphere introduction part 125. It can be captured by the illustrated filter or the like. Therefore, the gas from which the foreign matter is removed can be supplied to the circulation mechanism 150.

After heating the substrate G by the hot plate 114 for a predetermined time, the driving mechanism 172 raises the holding portion 170a of the substrate holding member 170 accommodated in the hot plate 114 in the + Z direction via the notch 114b.
Accordingly, the substrate G held on the hot plate 114 is lifted above the hot plate 114 by the holding unit 170a.

  Subsequently, the drive mechanism 172 moves the substrate G from the first preliminary chamber 80 to the second preliminary chamber 81 using the substrate holding member 170. In the ultraviolet processing unit UV, since the substrate holding member 170 has such a size that the four substrates G can be placed simultaneously, the substrate holding member 170 moves together when moving the substrate G between adjacent chambers. It is the composition to do. Therefore, the driving mechanism 172 can move the substrate holding member 170 along the X direction by simultaneously opening the shutters of the substrate carry-in unit 122, the substrate carry-in unit 161a, and the substrate carry-out unit 161b.

  The substrate holding member 170 holding the substrate G is moved in the −X direction by the drive mechanism 172 and carries the substrate G into the second preliminary chamber 81 via the substrate carry-in portion 122. The drive mechanism 172 moves the substrate holding member 170 to a position where the notch 124a and the holding portion 170a overlap with each other when viewed from the Z direction, and lowers the holding portion 170a of the substrate holding member 170 to bring the holding portion 170a into the groove portion 124a. Accommodate. As a result, the substrate G is transferred from the substrate holding member 170 to the hot plate 124. The substrate G is heated at 100 ° C. by the hot plate 124. In this way, by preheating the substrate G in the second preliminary chamber 81, the substrate G can be heated to a predetermined temperature in the ultraviolet treatment chamber 84 in a short time.

  In the chamber 121, since the internal atmosphere is circulated through the filter 151 by the circulation mechanism 150, a clean atmosphere is stably maintained (see FIG. 5). After the substrate G is transferred to the hot plate 124 by the driving mechanism 172, the substrate holding member 170 is returned to the initial position through the groove 124a. As described above, the substrate holding member 170 can move in the groove 124a of the hot plate 124, thereby reducing the time required for the movement.

  At the timing when the substrate holding member 170 is returned to the initial position, another substrate G is placed in the main chamber 111 of the first preliminary chamber 80 by the robot arm (not shown) via the sub chamber 110 (substrate inlet 111a). It is being conveyed sequentially. This other substrate is carried out of the ultraviolet processing unit UV through the second preliminary chamber 81, the third preliminary chamber 82, the ultraviolet processing chamber 84, and the fourth preliminary chamber 83 in the same manner as the previously loaded substrate G. It has become. That is, according to the ultraviolet processing unit UV according to the present embodiment, it is possible to simultaneously transport four substrates G between adjacent chambers.

  After heating the substrate G by the hot plate 124 for a predetermined time, the drive mechanism 172 lifts the substrate G above the hot plate 124 by raising the holding portion 170a in the + Z direction via the notch 124b. Then, the driving mechanism 172 moves the substrate holding member 170 in the −X direction to move the substrate G in the chamber 121 of the second preliminary chamber 81 into the chamber 131 of the third preliminary chamber 82.

  The drive mechanism 172 delivers the substrate G to the hot plate 134 of the third preliminary chamber 82 by accommodating the substrate holding member 170 (holding portion 170a) in the groove portion 134a through the notch 134b. The drive mechanism 172 returns the substrate holding member 170 to the initial position. As described above, the substrate holding member 170 can move in the groove 134 a of the hot plate 134, thereby shortening the time required for the movement.

The substrate G is heated by the hot plate 134 at 100 ° C. for a predetermined time. In this way, by heating the substrate G in the third preliminary chamber 82 in advance, the substrate G can be heated to a predetermined temperature in the ultraviolet processing chamber 84 in a short time.
In the chamber 131, since the internal atmosphere is circulated through the filter 151 by the circulation mechanism 150, a clean atmosphere is stably maintained (see FIG. 5).

  When another substrate G is placed on the hot plate 114 in the first preliminary chamber 80, the timing at which the substrate G is transported from the second preliminary chamber 81 into the third preliminary chamber 82; At the same time, another substrate G is transferred from the first preliminary chamber 80 to the second preliminary chamber 81 by the substrate holding member 170.

  After the substrate G is heated by the hot plate 134 for a predetermined time, the drive mechanism 172 lifts the substrate G above the hot plate 134 by raising the holding portion 170a in the + Z direction via the notch 134b. Then, the driving mechanism 172 moves the substrate holding member 170 in the −X direction to move the substrate G in the chamber 131 of the third preliminary chamber 82 into the chamber 161 of the ultraviolet processing chamber 84 via the substrate carry-in portion 161a. To do.

The drive mechanism 172 delivers the substrate G to the hot plate 164 of the ultraviolet processing chamber 84 by accommodating the substrate holding member 170 (holding portion 170a) in the groove portion 164a via the notch 164b. The drive mechanism 172 returns the substrate holding member 170 to the initial position. As described above, the substrate holding member 170 can move in the groove 164 a of the hot plate 164, thereby reducing the time required for the movement.
Thus, the operation of loading the substrate G into the ultraviolet processing chamber 84 is completed.

  By the way, when the substrate G is carried in the ultraviolet processing unit UV, outside air may enter the unit UV through the sub-chambers 110 and 140, and the oxygen concentration inside the ultraviolet processing unit UV may increase. In particular, when the oxygen concentration in the chamber 161 of the ultraviolet processing chamber 84 increases, a chemical reaction occurs on the surface of the substrate G, and impurities may be generated, making it impossible to perform the ultraviolet irradiation process satisfactorily.

  On the other hand, in the present embodiment, as described above, the first spare is provided between the chamber 161 of the ultraviolet processing chamber 84 and the sub-chamber 110 serving as the substrate carry-in port for carrying the substrate G into the ultraviolet processing unit UV. A chamber 80 to a third preliminary chamber 82 are provided.

  According to this, even when the substrate G is carried into the ultraviolet processing unit UV, the atmosphere in the chamber 161 of the ultraviolet processing chamber 84 varies depending on the first preliminary chamber 80 to the third preliminary chamber 82. Therefore, the inside of the chamber 161 can be maintained in a predetermined atmosphere (low oxygen atmosphere).

  Specifically, when the shutter of the substrate loading portion 161a is opened during loading of the substrate G, the ultraviolet processing chamber 84 in which the internal pressure is relatively high (positive pressure state) in the chamber 131 of the third preliminary chamber 82. Nitrogen gas flows into the chamber 161 so that the oxygen concentration is kept low (about 90% of the oxygen concentration in the chamber 161). The chamber 161 of the ultraviolet processing chamber 84 can be maintained in a predetermined low oxygen atmosphere by being supplied with nitrogen gas by the gas supply unit 165.

  Further, since the chamber 131 of the third preliminary chamber 82 and the chamber 121 of the second preliminary chamber 81 communicate with each other, the internal pressure is relatively high in the chamber 121 of the second preliminary chamber 81 (positive pressure state). The oxygen concentration is kept low (about 80% of the oxygen concentration in the chamber 161) by flowing nitrogen gas from the chamber 131 of the third preliminary chamber 82.

  Further, when the shutter of the substrate loading section 122 is opened when the substrate G is loaded, the internal pressure of the second preliminary chamber 81 is relatively high (positive pressure) in the chamber 111 of the first preliminary chamber 80. Nitrogen gas flows into the chamber 121 so that the oxygen concentration is kept low (about 70% of the oxygen concentration in the chamber 161).

  Thus, in the present embodiment, even when the substrate G is carried into the ultraviolet processing unit UV, the inside of the chamber 161 of the ultraviolet processing chamber 84 can be maintained in a predetermined atmosphere.

  After the substrate G is carried in, the ultraviolet processing chamber 84 irradiates the substrate G heated by the hot plate 164 with ultraviolet rays (i rays) from the light source 86 of the ultraviolet irradiation unit 162. Here, since the inside of the chamber 161 is in a low oxygen state by being supplied with the nitrogen gas by the gas supply unit 165 as described above, it does not cause a chemical change or the like in the development pattern formed on the substrate G. The ultraviolet irradiation treatment can be performed satisfactorily.

  After the ultraviolet irradiation process, the drive mechanism 172 lifts the substrate G above the hot plate 164 by raising the holding portion 170a in the + Z direction via the notch 164b. Then, the drive mechanism 172 carries the substrate G into the main chamber 141 of the fourth preliminary chamber 83 via the substrate carry-out portion 161b by moving the substrate holding member 170 in the −X direction.

The drive mechanism 172 moves the substrate holding member 170 to a position where the notch 164b and the holding portion 170a overlap each other when viewed from the Z direction, and then lowers the substrate holding member 170 to accommodate the holding portion 170a in the groove portion 144a. . As a result, the substrate G is delivered to the hot plate 144. The drive mechanism 172 passes the substrate G to the hot plate 144 and then returns the substrate holding member 170 to the initial standby position through the groove 144a. The substrate G is heated by the hot plate 144 at 100 ° C. for a predetermined time. Thus, by preheating the substrate G in the fourth preliminary chamber 83, the substrate G can be heated to a predetermined temperature in the post-baking unit PB in a short time.
In the main chamber 141, the internal atmosphere is circulated through the filter 151 by the circulation mechanism 150, so that a clean atmosphere is stably maintained (see FIG. 5).

  Subsequently, a robot arm (not shown) enters the main chamber 141 of the fourth preliminary chamber 83 via the sub chamber 140 (substrate exit 141b), and the substrate G is unloaded. At this time, the lifting mechanism 142 moves the support pin 142a to the + Z side, lifts the substrate G to a position higher than the height of the robot arm (position on the + Z side), and the robot arm is inserted on the back surface of the substrate G. The support pin 142a is lowered. Accordingly, the substrate G can be transferred from the support pin 142a to the robot arm. After the transfer of the substrate G, the robot arm is retracted from the main chamber 141 and the main chamber 141 is sealed. Then, the robot arm carries the substrate G carried out from the ultraviolet processing unit UV through the sub-chamber 140 into the post bake unit PB.

  By the way, when the substrate G is unloaded from the ultraviolet processing unit UV, there is a possibility that the oxygen concentration inside the ultraviolet processing unit UV (main chamber 141) may increase due to outside air entering through the sub chamber 140. In particular, when the oxygen concentration in the chamber 161 of the ultraviolet processing chamber 84 increases, a chemical reaction occurs on the surface of the substrate G, and impurities may be generated, making it impossible to perform the ultraviolet irradiation process satisfactorily.

  On the other hand, in the present embodiment, as described above, the fourth spare is provided between the chamber 161 of the ultraviolet processing chamber 84 and the sub-chamber 140 that forms the substrate carry-out port for carrying out the substrate G from the ultraviolet processing unit UV. A chamber 83 is provided.

  According to this, even when the substrate G is carried out from the ultraviolet processing unit UV, it is possible to prevent the fourth preliminary chamber 83 from changing the atmosphere in the chamber 161 of the ultraviolet processing chamber 84. The interior of the chamber 161 can be maintained in a predetermined atmosphere (low oxygen atmosphere).

  Specifically, when the shutter of the substrate carry-out portion 161b is opened when the substrate G is carried out, the main chamber 141 is supplied into the chamber 161 of the ultraviolet processing chamber 84 in which the internal pressure is relatively high (positive pressure state). As the nitrogen gas flows, the oxygen concentration is kept low (about 80% of the oxygen concentration in the chamber 161). The chamber 161 of the ultraviolet processing chamber 84 can be maintained in a predetermined low oxygen atmosphere by being supplied with nitrogen gas by the gas supply unit 165.

  Thus, in the present embodiment, even when the substrate G is unloaded from the ultraviolet processing unit UV, the inside of the chamber 161 of the ultraviolet processing chamber 84 can be maintained in a predetermined atmosphere.

  The substrate G carried into the post-bake unit PB is subjected to post-bake processing by the heating device 59 and cooled by the cooling device 60. After the cooling process, the substrate G is accommodated in the cassette C via the transport mechanism 11. In this way, a series of processing of coating processing, exposure processing, and development processing is performed on the substrate G.

  As described above, according to the present embodiment, the first preliminary chamber 80 to the fourth preliminary chamber 83 are provided, so that mixing of oxygen and moisture into the ultraviolet processing chamber 84 is prevented when the substrate G is loaded and unloaded. The interior of the ultraviolet processing chamber 84 can be stably maintained in a predetermined low oxygen atmosphere. Therefore, since a vacuum pump for maintaining low oxygen as in the prior art is not required, the ultraviolet irradiation unit UV can be reduced in size and cost.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the configuration in which the substrate holding member 170 supports a plurality (four) of substrates G at the same time has been described as an example. However, the substrate holding member 170 mounts the substrates G one by one to drive the driving mechanism. A configuration in which each moves independently between chambers by 172 may be adopted.

  In the above embodiment, the fourth preliminary chamber 83 is provided between the chamber 161 of the ultraviolet processing chamber 84 and the sub-chamber 140 serving as a substrate carry-out port for carrying out the substrate G from the ultraviolet processing unit UV. As described in the example, the first preliminary chamber 80 to the third preliminary chamber are provided between the chamber 161 of the ultraviolet processing chamber 84 and the sub-chamber 110 forming the substrate carry-in port for carrying the substrate G into the ultraviolet processing unit UV. The configuration may be such that only 82 is provided.

  In the above-described embodiment, the configuration in which the gas supply unit 165 is provided only in the chamber 161 of the ultraviolet processing chamber 84 is taken as an example, but each of the chambers 111 to 141 of the first preliminary chamber 80 to the third preliminary chamber 82 is used. Alternatively, a gas supply unit 165 may be provided.

  In the above embodiment, the hot plate 114 to 143 provided in each of the chambers 111 to 141 is configured to heat the substrate G at the same temperature (100 ° C.) as the hot plate 164 installed in the chamber 161 of the ultraviolet processing chamber 84. However, it is possible to adopt a configuration in which the temperatures of the hot plates 114 to 143 are sequentially lowered as the distance from the chamber 161 side increases.

UV ... UV treatment unit, SPA ... substrate treatment apparatus, 47 ... coating apparatus, 55 ... developing apparatus, 80 ... first spare chamber, 81 ... second spare chamber, 82 ... third spare chamber, 83 ... fourth spare chamber, 84 ... Ultraviolet processing chamber, 85 ... Substrate moving mechanism, 110 ... Sub chamber (substrate inlet), 140 ... Sub chamber (substrate outlet), 113, 123, 133, 143, 163 ... Heating mechanism, 114, 124, 134 , 144, 164 ... Hot plate, 114a, 124a, 134a, 144a, 164a ... Groove, 114b, 124b, 134b, 144b, 164b ... Notch, 150 ... Circulation mechanism, 151 ... Filter, 162 ... Ultraviolet irradiation part, 165 ... Gas Supply unit, 170 ... substrate holding member, 170a ... holding unit

Claims (11)

A processing chamber for irradiating the substrate with ultraviolet rays;
A heating mechanism for heating at least the substrate in the processing chamber;
A gas supply unit for supplying gas into the processing chamber so as to keep the processing chamber in a deoxygenated and dehydrated state;
A spare chamber that is provided at least between the substrate carry-in port for carrying the substrate into the ultraviolet irradiation apparatus and the processing chamber, and is maintained in a predetermined atmosphere by communicating with the processing chamber; , equipped with a,
The preliminary chamber has a circulation mechanism for circulating the internal atmosphere,
At the lower part of the preliminary chamber, an atmosphere introduction part that guides the internal atmosphere to the circulation mechanism is provided,
The ultraviolet irradiation apparatus according to claim 1, wherein the atmosphere introduction part is provided with a filter for capturing foreign matter in the internal atmosphere .   The ultraviolet irradiation apparatus according to claim 1, comprising a plurality of the preliminary chambers.   The ultraviolet irradiation apparatus according to claim 1, wherein the gas supply unit supplies an inert gas into the processing chamber.   The ultraviolet irradiation apparatus according to claim 3, wherein the gas supply unit supplies nitrogen gas as the inert gas.   5. The ultraviolet ray according to claim 2, wherein internal pressures in the plurality of preliminary chambers are set so as to gradually decrease from the processing chamber side toward the substrate carry-in port side. Irradiation device.   The ultraviolet irradiation apparatus according to claim 1, further comprising a substrate moving mechanism that moves the substrate between the preliminary chamber and the processing chamber. The heating mechanism includes a plate that heats the substrate while being held,
The ultraviolet irradiation apparatus according to claim 6, wherein a part of the substrate moving mechanism moves in a groove provided in the plate.   The ultraviolet irradiation apparatus according to claim 1, wherein the heating mechanism also heats the substrate in the preliminary chamber. The circulation mechanism, an ultraviolet irradiation device according to any one of claims 1 to 8, characterized in that the circulation of the internal atmosphere using a HEPA filter. The preliminary chamber, any one of claim 1 to 9, characterized in that also provided between the substrate carry-out port and said processing chamber for performing unloading of the substrate from within the ultraviolet radiation device The ultraviolet irradiation device described in 1. A coating apparatus for applying a treatment liquid to a substrate;
A developing device for developing the processing solution applied to the substrate;
An ultraviolet irradiation device for performing ultraviolet irradiation treatment on the substrate;
An associated apparatus for performing processes related to the coating process, the developing process, and the ultraviolet irradiation process, and transporting the substrate in series between the coating apparatus, the developing apparatus, the ultraviolet irradiation apparatus, and the related apparatus. A substrate processing apparatus,
11. The substrate processing apparatus, wherein the ultraviolet irradiation apparatus according to any one of claims 1 to 10 is used as the ultraviolet irradiation apparatus.

Images