JP5886615B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP5886615B2 JP5886615B2 JP2011262177A JP2011262177A JP5886615B2 JP 5886615 B2 JP5886615 B2 JP 5886615B2 JP 2011262177 A JP2011262177 A JP 2011262177A JP 2011262177 A JP2011262177 A JP 2011262177A JP 5886615 B2 JP5886615 B2 JP 5886615B2
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- transparent conductive
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 239000002184 metal Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 25
- 230000005496 eutectics Effects 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000005012 migration Effects 0.000 description 11
- 238000013508 migration Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000002265 prevention Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000005169 Debye-Scherrer Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
Claims (3)
- 第1導電型の第1の半導体層と、該第1の半導体層の上に形成される活性層と、該活性層の上に形成される第2導電型の第2の半導体層とを含む半導体積層構造と、
前記第1の半導体層又は前記第2の半導体層の一方に接して形成される配線電極層と、
前記第1の半導体層又は前記第2の半導体層の前記配線電極層が形成されていない他方に接して形成されるAgを含む反射電極層と、
前記反射電極層を覆って形成される透明導電膜からなる第1キャップ層と、該第1キャップ層を覆って形成され、金属、合金又は金属窒化物からなる第2キャップ層との積層を少なくとも2セット以上含むキャップ層と、
共晶層を介して前記キャップ層と結合する支持基板と
を有する半導体素子。 - 前記第1キャップ層の厚さは100Åよりも厚く、1000Å以下である請求項1記載の半導体素子。
- 前記透明導電膜は、結晶子の大きさが500Å以下の非晶質又は微結晶である請求項1又は2記載の半導体素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011262177A JP5886615B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体素子 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2011262177A JP5886615B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013115341A JP2013115341A (ja) | 2013-06-10 |
JP5886615B2 true JP5886615B2 (ja) | 2016-03-16 |
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JP2011262177A Active JP5886615B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体素子 |
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JP (1) | JP5886615B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6261927B2 (ja) * | 2013-09-24 | 2018-01-17 | スタンレー電気株式会社 | 半導体発光素子 |
DE102015109786A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement |
JP6890707B1 (ja) | 2020-10-20 | 2021-06-18 | Dowaエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938791B (zh) * | 2004-09-13 | 2010-12-29 | 住友金属矿山株式会社 | 透明导电膜及其制造方法、以及透明导电性基材、发光装置 |
JP4967243B2 (ja) * | 2005-03-08 | 2012-07-04 | 三菱化学株式会社 | GaN系発光ダイオードおよび発光装置 |
KR100891833B1 (ko) * | 2006-10-18 | 2009-04-07 | 삼성전기주식회사 | 다층 전극 및 이를 구비한 화합물 반도체 발광소자 |
JP2011066073A (ja) * | 2009-09-15 | 2011-03-31 | Showa Denko Kk | 半導体発光素子 |
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