JP5886023B2 - プラズマ処理方法および装置 - Google Patents

プラズマ処理方法および装置 Download PDF

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JP5886023B2
JP5886023B2 JP2011276097A JP2011276097A JP5886023B2 JP 5886023 B2 JP5886023 B2 JP 5886023B2 JP 2011276097 A JP2011276097 A JP 2011276097A JP 2011276097 A JP2011276097 A JP 2011276097A JP 5886023 B2 JP5886023 B2 JP 5886023B2
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substrate
plasma processing
processed
plasma
processing method
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JP2013128005A5 (enExample
JP2013128005A (ja
Inventor
田村　仁
仁 田村
茂 白米
茂 白米
田村　智行
智行 田村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2011276097A 2011-12-16 2011-12-16 プラズマ処理方法および装置 Active JP5886023B2 (ja)

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JP2011276097A JP5886023B2 (ja) 2011-12-16 2011-12-16 プラズマ処理方法および装置

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JP2011276097A JP5886023B2 (ja) 2011-12-16 2011-12-16 プラズマ処理方法および装置

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JP2013128005A JP2013128005A (ja) 2013-06-27
JP2013128005A5 JP2013128005A5 (enExample) 2014-10-16
JP5886023B2 true JP5886023B2 (ja) 2016-03-16

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6600588B2 (ja) 2016-03-17 2019-10-30 東京エレクトロン株式会社 基板搬送機構の洗浄方法及び基板処理システム
JP7771632B2 (ja) * 2021-11-05 2025-11-18 東京エレクトロン株式会社 基板の搬送を行う装置、及び基板を搬送する方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3215131B2 (ja) * 1991-10-08 2001-10-02 株式会社東芝 半導体装置の製造装置
JPH11354503A (ja) * 1998-06-08 1999-12-24 Hitachi Ltd エッチング装置およびその操作方法ならびに半導体装置の製造方法
JP2004235423A (ja) * 2003-01-30 2004-08-19 Seiko Epson Corp 半導体基板の清浄方法、半導体装置の製造方法及びその製造装置
JP4586626B2 (ja) * 2005-05-17 2010-11-24 ソニー株式会社 エッチング方法および半導体装置の製造方法

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