JP5882939B2 - Joining method, joining apparatus and joining system - Google Patents

Description

  Embodiments disclosed herein relate to a bonding method, a bonding apparatus, and a bonding system.

  In recent years, for example, in a semiconductor device manufacturing process, a substrate to be processed such as a silicon wafer or a compound semiconductor wafer is becoming larger and thinner. A thin substrate to be processed having a large diameter may be warped or cracked during conveyance or polishing. For this reason, the substrate to be processed is reinforced by attaching a support substrate such as a glass substrate to the substrate to be processed.

  For example, in Patent Document 1, an upper chuck and a lower chuck hold a substrate to be processed and a glass substrate, respectively, and the upper chuck and the lower chuck are brought close to each other to press the substrate to be processed and the glass substrate. A method of bonding is disclosed. For example, an adhesive is applied to the surface of the substrate to be processed or the glass substrate, and both are joined by being pressed as described above.

  Patent Document 1 also proposes a method in which a heating mechanism is provided in the upper chuck and the lower chuck, and the substrate to be processed and the glass substrate are heated to join them together.

International Publication No. 2010/055730

  However, in the above-described prior art, when an electrostatic chuck is employed as the glass substrate holding part, sodium is precipitated from the glass substrate by electrostatically adsorbing the glass substrate at a high temperature, and the surface deterioration of the electrostatic chuck or There was a risk of problems such as deterioration of the glass substrate.

  An object of one embodiment is to provide a bonding method, a bonding apparatus, and a bonding system capable of preventing precipitation of sodium from a glass substrate.

The joining method according to one aspect of the embodiment includes a first holding step, a second holding step, a temporary joining step, a temperature raising step, and a main joining step. In the first holding step, the substrate to be processed is held. In the second holding step, the glass substrate is held by electrostatic adsorption. In the temporary bonding step, after the first holding step and the second holding step, the substrate to be processed and the glass substrate are temporarily bonded at a pressure lower than a desired pressure and a temperature not higher than the glass transition point of the glass substrate . In the temperature raising step, the electrostatic adsorption of the glass substrate is canceled simultaneously with the temporary bonding step or after the temporary bonding step, and the temperature is raised to a temperature equal to or higher than the glass transition point . In the main bonding step, the target substrate and the glass substrate are main bonded with a desired pressure after the temperature raising step.

  According to one aspect of the embodiment, sodium precipitation from the glass substrate can be prevented.

FIG. 1 is a schematic plan view showing the configuration of the joining system according to the present embodiment. FIG. 2 is a schematic side view of a substrate to be processed and a glass substrate. FIG. 3 is a schematic cross-sectional view showing the configuration of the bonding apparatus. FIG. 4 is a schematic side cross-sectional view showing the configuration of the joint. FIG. 5A is a schematic side sectional view showing the configuration of the first holding unit. FIG. 5B is a schematic side cross-sectional view illustrating a configuration of the second holding unit. FIG. 6A is an explanatory diagram of a situation in which warpage occurs in the first cooling mechanism and the second cooling mechanism in the related art. FIG. 6B is a schematic side cross-sectional view of the first cooling mechanism and the second cooling mechanism according to the present embodiment. FIG. 7 is a schematic side view of the second holding mechanism. FIG. 8 is a schematic plan view showing an example of the arrangement of the second holding mechanism. FIG. 9 is a schematic side view of a second holding mechanism according to a modification. FIG. 10A is a diagram showing a modification in the case of providing a stopper for preventing the displacement of the substrate to be processed or the glass substrate. FIG. 10B is a diagram showing a modified example in the case of providing a stopper for preventing the displacement of the substrate to be processed or the glass substrate. FIG. 11A is an explanatory diagram illustrating an operation example of the joining process. FIG. 11B is an explanatory diagram illustrating an operation example of the joining process. FIG. 12 is a timing chart showing the procedure of the bonding process according to the present embodiment. FIG. 13 is a flowchart illustrating a processing procedure of fail-safe processing.

  Hereinafter, embodiments of a joining device, a joining system, and a joining method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<1. Structure of joining system>
First, the configuration of the joining system according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the configuration of the joining system according to the present embodiment. FIG. 2 is a schematic side view of the substrate to be processed and the glass substrate. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  The bonding system 1 according to the present embodiment shown in FIG. 1 forms a superposed substrate T by bonding a substrate to be processed W and a glass substrate S (see FIG. 2) via an adhesive G.

  In the following, as shown in FIG. 2, among the plate surfaces of the substrate W to be processed, the plate surface on the side bonded to the glass substrate S via the adhesive G is referred to as “bonding surface Wj”, and the bonding surface Wj Is referred to as the “non-bonding surface Wn”. Further, among the plate surfaces of the glass substrate S, the plate surface on the side bonded to the substrate W to be processed through the adhesive G is referred to as “bonding surface Sj”, and the plate surface on the opposite side to the bonding surface Sj is “ This is referred to as “non-joint surface Sn”.

  The substrate W to be processed is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and the plate surface on the side where the electronic circuits are formed is used as a bonding surface Wj. The target substrate W is thinned by polishing the non-joint surface Wn after bonding to the glass substrate S.

  On the other hand, the glass substrate S as a support substrate is a substrate having the same diameter as the substrate W to be processed, and supports the substrate W to be processed. Further, as the adhesive G, for example, a thermoplastic resin is used.

  As shown in FIG. 1, the joining system 1 includes a carry-in / out station 2, a first transfer region 3, and a joining station 4. The carry-in / out station 2, the first transfer region 3, and the joining station 4 are integrally connected in this order in the positive direction of the X axis.

  The carry-in / out station 2 is a place where cassettes Cw, Cs, and Ct for storing a plurality of (for example, 25) substrates in a horizontal state are placed. For example, four cassette mounting tables 21 are placed in a line in the loading / unloading station 2. On each cassette mounting table 21, a cassette Cw for storing a substrate W to be processed, a cassette Cs for storing a glass substrate S, and a cassette Ct for storing a superposed substrate T are mounted.

  Note that the number of cassette mounting tables 21 can be arbitrarily determined. Here, an example in which the cassette Ct is mounted on two of the four cassette mounting tables 21 has been shown, but one of these is a cassette for collecting, for example, a substrate having a defect. May be placed.

  In the first transport region 3, a transport path 31 extending in the Y-axis direction and a first transport device 32 that can move along the transport path 31 are arranged. The first transfer device 32 is also movable in the X-axis direction and can be swung around the Z-axis, and the cassette Cw, Cs, Ct mounted on the cassette mounting table 21 and the first receiving of the joining station 4 described later. The substrate W to be processed, the glass substrate S, and the superposed substrate T are transferred to and from the transfer unit 41.

  The joining station 4 includes a first delivery unit 41 and a second transfer area 42. Further, the bonding station 4 includes a coating / heat treatment block G1 and a bonding processing block G2.

  The first delivery unit 41 is disposed between the first transport area 3 and the second transport area 42. In the first delivery unit 41, the substrate W, the glass substrate S, and the superposed substrate T between the first transport device 32 in the first transport region 3 and the second transport device 420 in the second transport region 42 described later. Is delivered.

  A second transport device 420 is disposed in the second transport region 42. The second transfer device 420 can move in the X-axis direction and the Y-axis direction and can turn about the Z-axis, and the substrate W to be processed between the first delivery unit 41, the coating / heat treatment block G1, and the bonding processing block G2. Then, the glass substrate S and the superposed substrate T are transported.

  The coating / heat treatment block G1 and the bonding processing block G2 are disposed to face each other with the second transfer region 42 interposed therebetween.

  In the coating / heat treatment block G <b> 1, two coating devices 43 and one heat treatment device 44 are arranged side by side adjacent to the second transfer region 42. The coating device 43 is a device that applies the adhesive G to the bonding surface Wj of the substrate W to be processed, and the heat treatment device 44 is a device that heats the substrate W to which the adhesive G is applied to a predetermined temperature. .

  In the joining processing block G2, four joining devices 45 are arranged adjacent to the second transport region 42. The bonding apparatus 45 bonds the target substrate W and the glass substrate S. A specific configuration of the joining device 45 will be described later.

  The joining system 1 includes a control device 5. The control device 5 controls the operation of the joining system 1. The control device 5 is a computer, for example, and includes a control unit and a storage unit (not shown). The storage unit stores a program for controlling various processes such as a bonding process. The control unit controls the operation of the bonding system 1 by reading and executing the program stored in the storage unit.

  Such a program may be recorded on a computer-readable recording medium and may be installed in the storage unit of the control device 5 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the bonding system 1 configured as described above, first, the first transfer device 32 in the first transfer region 3 takes out the substrate W to be processed from the cassette Cw placed on the cassette mounting table 21 and takes out the processed substrate. The substrate W is transferred to the first delivery unit 41. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward.

  The to-be-processed substrate W conveyed to the 1st delivery part 41 is taken out from the 1st delivery part 41 by the 2nd conveyance apparatus 420, and is carried in into the coating device 43 of the application | coating and heat processing block G1. The coating device 43 includes, for example, a spin chuck, and sucks and holds the non-joint surface Wn of the substrate to be processed W with the spin chuck. Then, the coating device 43 supplies the liquid adhesive G to the bonding surface Wj of the substrate to be processed W while rotating the substrate to be processed W that is held by suction. Thereby, the adhesive G is spread on the bonding surface Wj of the substrate W to be processed.

  After the adhesive G is applied by the coating device 43, the substrate W to be processed is unloaded from the coating device 43 by the second transfer device 420 and loaded into the heat treatment device 44. The heat treatment apparatus 44, for example, heats the substrate W to be processed in an inert atmosphere, thereby volatilizing a solvent such as an organic solvent contained in the adhesive G so that the adhesive G is harder than when applied. . Thereafter, the temperature of the substrate to be processed W is adjusted to a predetermined temperature, for example, room temperature, by the heat treatment apparatus 44.

  After the heat treatment is performed by the heat treatment apparatus 44, the substrate to be processed W is unloaded from the heat treatment apparatus 44 by the second transfer apparatus 420 and loaded into the bonding apparatus 45.

  On the other hand, the glass substrate S is taken out from the cassette Cs by the first transport device 32 and transported to the first delivery unit 41, and is further taken out from the first delivery unit 41 by the second transport device 420 and transported to the joining device 45. Is done.

  When the substrate to be processed W and the glass substrate S are carried into the bonding apparatus 45, the bonding process of the substrate to be processed W and the glass substrate S is performed by the bonding apparatus 45. Thereby, the superposition | polymerization board | substrate T is formed. Thereafter, the superposed substrate T is transported to the first delivery unit 41 by the second transport device 420 and transported to the cassette Ct by the first transport device 32. Thus, a series of processing ends.

<2. Structure of joining device>
Next, the structure of the joining apparatus 45 is demonstrated with reference to FIG. FIG. 3 is a schematic cross-sectional view showing the configuration of the bonding apparatus 45.

  As shown in FIG. 3, the joining device 45 includes a processing chamber 50 that can seal the inside. A loading / unloading port 51 for the target substrate W, the glass substrate S, and the superposed substrate T is formed on the side surface of the processing chamber 50 on the second transfer region 42 side. The loading / unloading port 51 is provided with an open / close shutter (not shown).

  Inside the processing chamber 50, an inner wall 52 that divides a region in the processing chamber 50 into a preprocessing region D1 and a bonding region D2 may be provided. When the inner wall 52 is provided, a loading / unloading port 53 for the target substrate W, the glass substrate S, and the superposed substrate T is formed on the inner wall 52, and an opening / closing shutter (not shown) is provided at the loading / unloading port 53. The aforementioned loading / unloading port 51 is formed on the side surface of the processing chamber 50 in the preprocessing region D1.

  In the pretreatment region D <b> 1, a delivery unit 60 that delivers the substrate to be processed W, the glass substrate S, and the superposed substrate T to and from the outside of the bonding apparatus 45 is provided. The delivery unit 60 is disposed adjacent to the loading / unloading port 51.

  The delivery unit 60 includes a delivery arm 61 and a support pin 62. The delivery arm 61 delivers the substrate W, the glass substrate S, and the superposed substrate T between the second transfer device 420 (see FIG. 1) and the support pins 62. The support pins 62 are provided in a plurality of, for example, three locations, and support the target substrate W, the glass substrate S, and the superposed substrate T.

  The delivery unit 60 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the target substrate W, the glass substrate S, and the superposed substrate T at the same time. For example, the substrate W to be processed or the glass substrate S before bonding may be delivered by one delivery unit 60, and the superposed substrate T after joining may be delivered by another delivery unit 60. Alternatively, the substrate W to be processed before bonding may be delivered by one delivery unit 60 and the glass substrate S before joining may be delivered by another delivery unit 60.

  A reversing unit 70 for reversing the front and back surfaces of the substrate W to be processed is provided on the Y-axis negative direction side of the pretreatment region D1, that is, the loading / unloading port 53 side.

  The reversing unit 70 includes a holding arm 71 that holds the target substrate W or the glass substrate S in between. The holding arm 71 extends in the horizontal direction (X-axis direction in FIG. 3), is rotatable around the horizontal axis, and is in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction ( It can move in the Z-axis direction).

  The reversing unit 70 also has an adjustment function for adjusting the horizontal direction of the substrate W or the glass substrate S to be processed. Specifically, the inversion unit 70 includes a detection unit 72 that detects the position of the notch portion of the glass substrate S or the substrate W to be processed. In the reversing unit 70, the position of the notch portion is detected by detecting the position of the notch portion with the detection unit 72 while moving the glass substrate S or the substrate W to be processed held in the holding arm 71 in the horizontal direction. The horizontal direction of the substrate to be processed W or the glass substrate S is adjusted by adjusting.

  On the Y axis positive direction side of the bonding region D2, a transport unit 80 for transporting the substrate to be processed W, the glass substrate S, and the superposed substrate T is provided for the delivery unit 60, the reversing unit 70, and the joint unit 90 described later. . The transport unit 80 is disposed adjacent to the loading / unloading port 53.

  The transport unit 80 includes two transport arms 81 and 82. The transfer arms 81 and 82 are arranged in two stages in this order from the bottom in the vertical direction, and can be moved in the horizontal direction and the vertical direction by a driving unit (not shown).

  Of the transfer arms 81 and 82, the transfer arm 81 holds and transfers the back surface of the glass substrate S or the like, that is, the non-joint surface Sn. The transport arm 82 holds and transports the front surface of the substrate W whose front and back surfaces are reversed by the reversing unit 70, that is, the outer peripheral portion of the bonding surface Wj.

  And the junction part 90 which joins the to-be-processed substrate W and the glass substrate S is provided in the Y-axis negative direction side of the junction area | region D2.

  In the joining apparatus 45 configured as described above, when the substrate to be processed W is delivered to the delivery arm 61 of the delivery unit 60 by the second transport device 420, the delivery arm 61 receives the substrate to be treated W to the support pins 62. hand over. Thereafter, the substrate W to be processed is transported from the support pin 62 to the reversing unit 70 by the transport arm 81 of the transport unit 80.

  The substrate W transferred to the reversing unit 70 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 72 of the reversing unit 70. Thereafter, the front and back surfaces of the substrate W to be processed are reversed by the reversing unit 70. That is, the joint surface Wj is directed downward.

  Thereafter, the substrate W to be processed is transferred from the reversing unit 70 to the bonding unit 90 by the transfer arm 82 of the transfer unit 80. At this time, since the transfer arm 82 holds the outer peripheral portion of the substrate W to be processed, it is possible to prevent the bonding surface Wj from being contaminated by particles or the like attached to the transfer arm 82, for example.

  On the other hand, when the glass substrate S is delivered to the delivery arm 61 of the delivery unit 60 by the second transport device 420, the delivery arm 61 delivers the glass substrate S to the support pins 62. Thereafter, the glass substrate S is transported from the support pin 62 to the reversing unit 70 by the transport arm 81 of the transport unit 80.

  The glass substrate S conveyed to the reversing unit 70 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 72 of the reversing unit 70. Thereafter, the glass substrate S is transported from the reversing unit 70 to the bonding unit 90 by the transport arm 81 of the transport unit 80.

  When the carry-in of the substrate to be processed W and the glass substrate S to the bonding portion 90 is completed, the substrate to be processed W and the glass substrate S are bonded to each other by the bonding portion 90 to form a superposed substrate T. The formed superposed substrate T is transported from the joining section 90 to the delivery section 60 by the transport arm 81 of the transport section 80, and then delivered to the delivery arm 61 through the support pin 62, and further from the delivery arm 61 to the second arm. It is delivered to the transfer device 420.

<3. Structure of joint part>
Next, the structure of the junction part 90 is demonstrated with reference to FIG. FIG. 4 is a schematic side cross-sectional view showing the configuration of the joint portion 90. In FIG. 4, only components necessary for explaining the characteristics of the joint portion 90 are shown, and descriptions of general components are omitted.

  As shown in FIG. 4, the joining unit 90 includes a first holding unit 101 and a second holding unit 201. The first holding unit 101 is disposed above the second holding unit 201 and holds the substrate W to be processed. Further, the second holding unit 201 holds the glass substrate S. The first holding unit 101 and the second holding unit 201 have a substantially disk shape having a larger diameter than the target substrate W and the glass substrate S.

  The 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 are electrostatic chucks, and hold | maintain the to-be-processed substrate W and the glass substrate S by electrostatic adsorption, respectively. Here, the configuration of the first holding unit 101 and the second holding unit 201 will be described with reference to FIGS. 5A and 5B. FIG. 5A is a schematic side sectional view showing the configuration of the first holding unit 101, and FIG. 5B is a schematic side sectional view showing the configuration of the second holding unit 201.

  As shown in FIGS. 5A and 5B, the first holding unit 101 and the second holding unit 201 include electrostatic adsorption units 111 and 211.

  The electrostatic chucks 111 and 211 include a plurality of internal electrodes 111a and 211a, and non-joint surfaces of the substrate W to be processed using electrostatic force generated on the holding surfaces 113 and 213 by the internal electrodes 111a and 211a. Wn and the non-joint surface Sn of the glass substrate S are adsorbed, respectively.

  As described above, since the bonding portion 90 according to the present embodiment uses the electrostatic chuck as the first holding portion 101 and the second holding portion 201, the substrate to be processed W and the glass substrate S can be securely attached under a reduced pressure atmosphere. Can be retained.

  That is, it is conceivable to use a vacuum chuck or the like that performs suction holding using negative pressure as the holding unit. However, since the holding force of the holding unit decreases in a reduced pressure environment, the substrate W to be processed and the glass substrate S There is a risk of dropping or misalignment. On the other hand, according to the electrostatic chuck, the attracting force does not decrease even in a vacuum environment, so that the target substrate W and the glass substrate S can be reliably held.

  In addition, when a mechanical chuck or the like that performs mechanical holding is used as the holding portion, the substrate W and the glass substrate S may be damaged. The processing substrate W and the glass substrate S are hardly damaged.

  The second holding unit 201 may be a vacuum chuck, and a rubber pad may be provided on the holding surface to prevent the glass substrate S from being displaced in a reduced pressure atmosphere. However, the rubber pad cannot be used when the bonding process is performed in a high temperature environment exceeding the heat resistance temperature of the rubber pad, like the bonding portion 90 according to the present embodiment.

  Therefore, in the joining portion 90 according to the present embodiment, it is preferable to use an electrostatic chuck for both the first holding portion 101 and the second holding portion 201. In addition, although the heat resistant temperature of fluororubber known to have high heat resistance is 300 ° C., in the bonding system 1 according to the present embodiment, the substrate W and the glass substrate S are processed in a high temperature environment of 300 ° C. or higher. A joining process is performed.

  As shown in FIGS. 5A and 5B, the first holding unit 101 and the second holding unit 201 include vacuum suction units 112 and 212 in addition to the electrostatic suction units 111 and 211.

  The vacuum suction portions 112 and 212 include intake spaces 112a and 212a and a plurality of through holes 112b and 212b communicating from the holding surfaces 113 and 213 to the intake spaces 112a and 212a. Intake devices 115 and 215 such as a vacuum pump are connected to the intake spaces 112a and 212a through intake pipes 114 and 214, respectively.

  The vacuum suction units 112 and 212 use the negative pressure generated by the suction of the suction devices 115 and 215 to suck the non-joint surface Wn of the substrate W to be processed and the non-joint surface Sn of the glass substrate S, respectively. The target substrate W and the glass substrate S are held.

  In addition, the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 are formed with ceramics, such as aluminum nitride, for example.

  In addition, steps 116 and 216 that are recessed in the thickness direction with respect to the holding surfaces 113 and 213 are provided on the outer peripheral portions of the first holding unit 101 and the second holding unit 201. A first holding mechanism 401 and a second holding mechanism 402 are provided at the steps 116 and 216 (see FIG. 4).

  The first holding mechanism 401 and the second holding mechanism 402 elastically hold the first holding unit 101 and the second holding unit 201. The first holding mechanism 401 and the second holding mechanism 402 will be described later.

  Returning to FIG. 4, the description of the first holding unit 101 and the second holding unit 201 will be continued. The first holding unit 101 and the second holding unit 201 contain a first heating mechanism 117 and a second heating mechanism 217, respectively. The first heating mechanism 117 heats the target substrate W held by the first holding unit 101, and the second heating mechanism 217 heats the glass substrate S held by the second holding unit 201.

  The bonding process between the substrate to be processed W and the glass substrate S is performed in a reduced pressure atmosphere. Therefore, as the first heating mechanism 117 built in the first holding unit 101, a ceramic heater that can be used even under a reduced pressure atmosphere is used.

  On the other hand, since the second holding part 201 is formed with a through hole or the like for inserting a first temperature detection part 301 or the like to be described later, it is difficult to dispose a sheathed heater. Therefore, a ceramic heater is used as the second heating mechanism 217 built in the second holding unit 201.

  In addition, the joint portion 90 includes a first cooling mechanism 102, a third heating mechanism 103, a pressing portion 104, a base member 105, and a pressure mechanism 106.

  The 1st cooling mechanism 102 is provided in contact with the surface on the opposite side to the holding surface 113 (refer FIG. 5A) of the 1st holding | maintenance part 101. As shown in FIG. As the first cooling mechanism 102, for example, a metal cooling jacket can be used, and the first holding unit 101 is cooled by cooling the first holding unit 101 using a cooling fluid such as cold water as a medium to be processed. The substrate W is cooled.

  The third heating mechanism 103 has, for example, a disk shape having substantially the same diameter as the substrate W to be processed. The third heating mechanism 103 is disposed on the surface of the first cooling mechanism 102 opposite to the surface on which the first holding unit 101 is disposed, and heats the first cooling mechanism 102. As the 3rd heating mechanism 103, the sheathed heater which can be used also in a pressure-reduced atmosphere can be used.

  The pressing unit 104 presses the third heating mechanism 103 against the first cooling mechanism 102. The pressing unit 104 includes a plate 141 and a support member 142. The plate 141 is a metal member having a disk shape having substantially the same diameter as the third heating mechanism 103, and is disposed on the upper surface of the third heating mechanism 103. The support member 142 can be expanded and contracted in the vertical direction, and a plurality of support members 142 are arranged on the upper surface of the plate 141 to prevent displacement of the plate 141 and the third heating mechanism 103.

  The pressing unit 104 can press the third heating mechanism 103 against the first cooling mechanism 102 by the weight of the plate 141, for example. Alternatively, an urging member such as a coil spring may be provided inside the support member 142, and the third heating mechanism 103 may be pressed against the first cooling mechanism 102 by the urging member. In this way, the third heating mechanism 103 is pressed against the first cooling mechanism 102 and the third heating mechanism 103 is brought into close contact with the first cooling mechanism 102, thereby making it possible to more reliably warp the first cooling mechanism 102 due to thermal deformation. Can be prevented.

  The base member 105 is attached to the upper surface of the first chamber portion 511 described later above the pressing portion 104. The upper end portion of the support member 142 is fixed to the lower surface of the base member 105, for example.

  The pressurizing mechanism 106 moves the first holding unit 101 vertically downward to bring the target substrate W into contact with the glass substrate S and pressurize it. The pressurizing mechanism 106 includes a pressure vessel 161, a gas supply pipe 162, and a gas supply source 163.

  The pressure vessel 161 is made of, for example, a stainless steel bellows that can be expanded and contracted in the vertical direction. The lower end portion of the pressure vessel 161 is fixed to the upper surface of the first cooling mechanism 102, and the upper end portion is fixed to the lower surface of the base member 105. The third heating mechanism 103 and the pressing unit 104 described above are arranged inside the pressure vessel 161.

  One end of the gas supply pipe 162 is connected to the pressure vessel 161 via the base member 105 and a first chamber portion 511 described later, and the other end is connected to the gas supply source 163.

  In the pressure vessel 161, the gas is supplied from the gas supply source 163 through the gas supply pipe 162 to the inside of the pressure vessel 161, whereby the pressure vessel 161 extends and the first holding unit 101 is lowered. Thereby, the to-be-processed substrate W contacts with the glass substrate S, and is pressurized. The pressure applied to the target substrate W and the glass substrate S is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 161.

  In addition, since the pressure vessel 161 has elasticity, even if a difference occurs between the parallelism of the first holding unit 101 and the parallelism of the second holding unit 201, the difference can be absorbed. Moreover, since the inside of the pressure vessel 161 is evenly pressurized by the gas, the target substrate W and the glass substrate S can be evenly pressurized.

  The joining unit 90 includes a second cooling mechanism 202, a fourth heating mechanism 203, and a spacer 204. The second holding unit 201, the second cooling mechanism 202, the fourth heating mechanism 203, and the spacer 204 are stacked in the order of the spacer 204, the fourth heating mechanism 203, the second cooling mechanism 202, and the second holding unit 201 from the bottom. The

  The second cooling mechanism 202 has, for example, a disk shape having substantially the same diameter as the second holding unit 201. The second cooling mechanism 202 is provided in contact with the surface opposite to the holding surface 213 (see FIG. 5B) of the second holding unit 201. Similar to the first cooling mechanism 102, for example, a metal cooling jacket can be used for the second cooling mechanism 202, and the second holding unit 201 is cooled by cooling the second holding unit 201 using a cooling fluid such as cold water as a medium. The glass substrate S held by the unit 201 is cooled.

  The fourth heating mechanism 203 has, for example, a disk shape having a larger diameter than the second cooling mechanism 202. The fourth heating mechanism 203 is disposed on the surface of the second cooling mechanism 202 opposite to the surface on which the second holding unit 201 is disposed, and heats the second cooling mechanism 202. A ceramic heater is used for the fourth heating mechanism 203 for the same reason as the first heating mechanism 117.

  The spacer 204 is a member arranged on the lower surface of the fourth heating mechanism 203 and is provided, for example, to adjust the height of the second holding unit 201. The spacer 204 is placed on the lower surface of the second chamber portion 512 described later. Note that the joining portion 90 does not necessarily need to include the spacer 204.

  As described above, in the joint portion 90 according to the present embodiment, the first heating mechanism 117 and the third heating mechanism 103 are provided so as to sandwich the upper and lower surfaces of the first cooling mechanism 102, and the upper and lower surfaces of the second cooling mechanism 202 are mounted. A second heating mechanism 217 and a fourth heating mechanism 203 are provided so as to be sandwiched. Thereby, the curvature by the heating of the 1st cooling mechanism 102 and the 2nd cooling mechanism 202 can be suppressed, and the failure | damage of the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 by this curvature can be prevented.

  This point will be described with reference to FIGS. 6A and 6B. FIG. 6A is an explanatory diagram of a situation in which warpage occurs in the first cooling mechanism and the second cooling mechanism in the related art. FIG. 6B is a schematic side sectional view of the first cooling mechanism 102 and the second cooling mechanism 202 according to the present embodiment.

  As shown in FIG. 6A, conventionally, a first heating mechanism 117X of the first holding unit 101X is provided on the lower surface of the first cooling mechanism 102X, and a second of the second holding unit 201X is provided on the upper surface of the second cooling mechanism 202X. Only a heating mechanism 217X was provided.

  For this reason, conventionally, when heating is performed by the first heating mechanism 117X and the second heating mechanism 217X, a temperature difference is easily generated between the upper and lower surfaces of the first cooling mechanism 102X and the second cooling mechanism 202X. In particular, when heating is performed in a reduced-pressure atmosphere, the thermal conductivity of the gas is reduced by the reduced pressure. A large temperature difference is likely to occur between the portions that do not contact with each other.

  Therefore, conventionally, the first cooling mechanism 102X and the second cooling mechanism 202X are easily warped. The first holding unit 101X and the second holding unit 201X are formed of ceramics having low toughness compared to metal or the like. For this reason, when stress due to warpage of the first cooling mechanism 102X and the second cooling mechanism 202X is applied to the first holding unit 101X and the second holding unit 201X, the first holding unit 101X and the second holding unit 201X are cracked. Damage may occur.

  Therefore, in the joint portion 90 according to this embodiment, as shown in FIG. 6B, the third heating mechanism 103 is further provided on the upper surface of the first cooling mechanism 102, and the fourth heating mechanism 203 is further provided on the lower surface of the second cooling mechanism 202. It was decided.

  Accordingly, it is possible to prevent a temperature difference between the upper and lower surfaces of the first cooling mechanism 102 and the second cooling mechanism 202, and thus it is possible to suppress warping of the first cooling mechanism 102 and the second cooling mechanism 202. . Therefore, according to the joint portion 90 according to the present embodiment, the first holding portion 101 and the second holding portion 201 can be prevented from being damaged.

  As shown in FIG. 4, the first holding unit 101 is provided with a first temperature detection unit 303 for detecting the temperature of the substrate W to be processed. A second temperature detection unit 302 for detecting the temperature of the first cooling mechanism 102 is attached to the outer periphery of the first cooling mechanism 102. For example, a thermocouple is used for the first temperature detection unit 303 and the second temperature detection unit 302.

  The detection results by the first temperature detection unit 303 and the second temperature detection unit 302 are transmitted to the control device 5. And the control apparatus 5 performs the fail safe process which stops the heating by the 1st heating mechanism 117 grade | etc., When it determines with the curvature having generate | occur | produced in the 1st cooling mechanism 102 based on these detection results.

  Similarly, the second holding unit 201 is provided with a first temperature detection unit 301 for detecting the temperature of the glass substrate S, and the temperature of the second cooling mechanism 202 is set on the outer periphery of the second cooling mechanism 202. A second temperature detector 304 for detection is attached. For example, a thermocouple is used for the first temperature detection unit 301 and the second temperature detection unit 304.

  The detection results by the first temperature detection unit 301 and the second temperature detection unit 304 are transmitted to the control device 5. And the control apparatus 5 stops the heating by the 1st heating mechanism 117 grade | etc., Also when it determines with the curvature having generate | occur | produced in the 2nd cooling mechanism 202 based on these detection results.

  By providing such fail-safe processing, even if the first cooling mechanism 102 and the second cooling mechanism 202 are warped, it is possible to prevent further warping, and the first holding unit 101 and Breakage of the second holding unit 201 can be prevented. Such fail-safe processing will be described later with reference to FIG.

  Moreover, the 1st cooling mechanism 102 and the 2nd cooling mechanism 202 are easy to warp in the direction in which an outer peripheral part leaves | separates from the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201, as shown to FIG. 6A. For this reason, as the warpage of the first cooling mechanism 102 and the second cooling mechanism 202 increases, the temperature of the outer periphery of the first cooling mechanism 102 and the second cooling mechanism 202 and the first holding unit 101 and the second holding unit 201 There will be a difference in temperature.

  Therefore, the second temperature detection units 302 and 304 are provided on the outer peripheral portions of the first cooling mechanism 102 and the second cooling mechanism 202, respectively, and the temperatures of the outer peripheral portions of the first cooling mechanism 102 and the second cooling mechanism 202 are detected. Thus, warpage of the first cooling mechanism 102 and the second cooling mechanism 202 can be detected appropriately.

  In the present embodiment, an example in which the second temperature detection units 302 and 304 are provided in both the first cooling mechanism 102 and the second cooling mechanism 202 has been described, but the first cooling mechanism 102 and the second cooling mechanism 202 are illustrated. The second temperature detectors 302 and 304 may be provided only in either one of them. Also, the first temperature detection units 301 and 303 may be provided only in either the first holding unit 101 or the second holding unit 201.

  Next, the first holding mechanism 401 and the second holding mechanism 402 will be described. The above-described first holding unit 101 is not fixed to the first cooling mechanism 102 and is centered to some extent by the positioning pin 11 but is stacked with a predetermined play in the horizontal direction. This is because, when the first holding unit 101 and the first cooling mechanism 102 are completely fixed, when the first holding unit 101 and the first cooling mechanism 102 are heated due to heating, the thermal elongation is released. This is because the first holding unit 101 and the first cooling mechanism 102 may be damaged without being able to be performed.

  Also, the second holding unit 201, the second cooling mechanism 202, the fourth heating mechanism 203, and the spacer 204 are not completely fixed to each other for the same reason as described above, and are stacked with a predetermined play in the horizontal direction. The Specifically, the second holding unit 201, the second cooling mechanism 202, the fourth heating mechanism 203, and the spacer 204 are centered to some extent by the positioning pins 11, and are prevented from rotating to some extent by the anti-rotation pins 12. It has become a state.

  Thus, the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 are not completely fixed, but with respect to other adjacent members (here, the 1st cooling mechanism 102 and the 2nd cooling mechanism 202). It is in a state of being laminated with a predetermined play in the horizontal direction. For this reason, the first holding unit 101 and the second holding unit 201 are likely to be displaced in the horizontal direction. In particular, when the joining process is performed in a reduced pressure environment, the first holding unit 101 and the second holding unit 201 are likely to be misaligned in the process of reducing the pressure inside the chamber 501 described later by intake air.

  As described above, if the first holding unit 101 and the second holding unit 201 are misaligned, the target substrate W and the glass substrate S may be joined in a deviated state.

  Therefore, in the joint portion 90 according to the present embodiment, the first holding portion 101 and the second holding portion 201 are elastically held using the first holding mechanism 401 and the second holding mechanism 402, respectively. Thereby, the position shift of the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 can be prevented, releasing the thermal expansion accompanying heating.

  The first holding mechanism 401 is disposed between the first holding unit 101 and a first chamber unit 511 described later, and elastically holds the outer periphery of the first holding unit 101. Further, the second holding mechanism 402 is disposed between the second holding unit 201 and a second chamber unit 512 described later, and elastically holds the outer peripheral portion of the second holding unit 201.

  Here, a specific configuration of the second holding mechanism 402 will be described with reference to FIGS. 7 and 8. FIG. 7 is a schematic side view of the second holding mechanism 402. FIG. 8 is a schematic plan view showing an example of the arrangement of the second holding mechanism 402.

  As shown in FIG. 7, the second holding mechanism 402 includes a base part 421, a claw part 422, a vertical urging part 423, and a support part 424.

  The base portion 421 is formed in a substantially arc shape in plan view (see FIG. 8), and is disposed close to the outer periphery of the fourth heating mechanism 203. The lower end portion of the base portion 421 is fixed to the lower surface of the second chamber portion 512, for example.

  The claw portion 422 is a member formed in a substantially claw shape in a side view, the base end portion is disposed above the base portion 421 at a predetermined interval, and the distal end portion is an upper portion of the step 216 of the second holding portion 201. Placed in.

  The claw portion 422 includes a coil spring 422b on a surface 422a facing the step 216 of the second holding portion 201. The coil spring 422b is horizontally provided on the facing surface 422a in a state of being curved along the circumferential direction of the step 216.

  The vertical biasing part 423 biases the claw part 422 in the negative Z-axis direction. Specifically, the vertical biasing portion 423 includes a shaft 423a, a locking portion 423b, and a vertical biasing member 423c. The shaft 423a is a member that extends in the Z-axis direction. The shaft 423 a is provided so as to penetrate the base end portion of the claw portion 422, and the base end portion of the shaft 423 a is fixed to the base portion 421. A screw groove is cut in the shaft 423a.

  The locking portion 423b is attached to the shaft 423a. Such a locking portion 423b is configured to include, for example, a nut, and the position in the Z-axis direction can be adjusted by turning it along a screw groove formed in the shaft 423a.

  The vertical biasing member 423c is provided between the upper surface of the base end portion of the claw portion 422 and the locking portion 423b, and applies a force in the negative Z-axis direction to the claw portion 422.

  The support part 424 is a member for maintaining the level of the claw part 422, and includes, for example, a nut 424a and a headless bolt 424b. The support portion 424 can adjust the level of the claw portion 422 by tightening or loosening the nut 424a with respect to the headless bolt 424b.

  The second holding mechanism 402 is configured as described above. When the claw 422 is urged in the negative Z-axis direction by the vertical urging unit 423, the claw 422 causes the second holding unit 201 to move in the Z-axis. Energize in the negative direction. Thereby, the 2nd holding | maintenance part 201 is hold | maintained elastically.

  As described above, in the joint portion 90, the outer peripheral portion of the second holding portion 201 is elastically held using the second holding mechanism 402. Therefore, even when the second holding part 201 is not completely fixed in consideration of the thermal elongation, the second holding part 201 is prevented from being displaced while the thermal elongation of the second holding part 201 due to heating is released. can do.

  Further, since the claw portion 422 of the second holding mechanism 402 includes the coil spring 422b on the surface 422a facing the step 216 of the second holding portion 201, the second holding portion 201 is more elastically held with a smaller contact area. be able to. Therefore, for example, the contact portion of the second holding unit 201 with the second holding mechanism 402 can be made difficult to break.

  In addition, in the joining part 90, the to-be-processed substrate W and the glass substrate S are joined in the high temperature environment more than the heat resistant temperature of fluororubber known to have high heat resistance. For this reason, a metal coil spring 422b is optimal as a member provided on the surface 422a facing the step 216 of the claw 422.

  Further, the second holding mechanism 402 is configured so that the claw portion 422 is brought into contact with the step 216 of the second holding portion 201 and formed so as not to protrude from the holding surface 213 of the second holding portion 201. Is done. Therefore, even when the first holding unit 101 and the second holding unit 201 are brought close to each other in the joining process described later, the second holding mechanism 402 does not get in the way.

  A plurality of second holding mechanisms 402 are provided for the outer peripheral portion of the second holding unit 201. For example, as shown in FIG. 8, three second holding mechanisms 402 are arranged at equal intervals in the circumferential direction of the second holding unit 201 at the step 216 of the second holding unit 201. Thereby, the thermal expansion of the 2nd holding | maintenance part 201 accompanying a heating can be escaped more uniformly.

  The step 216 of the second holding unit 201 is further provided with a bolt 13 for preventing the second holding unit 201, the second cooling mechanism 202, the fourth heating mechanism 203, and the spacer 204 from rotating.

  Here, an example in which three second holding mechanisms 402 are provided in the second holding unit 201 is shown, but the number of second holding mechanisms 402 provided in the second holding unit 201 is not limited to three.

  As shown in FIG. 4, the first holding mechanism 401 also elastically holds the first holding unit 101 in the same manner as the second holding mechanism 402 described above. As shown in FIG. 4, the first holding mechanism 401 includes a claw portion 411 and a vertical biasing member 412. The tip of the claw portion 411 contacts the step 116 of the first holding portion 101, and the vertical biasing member 412 biases the claw portion 411 in the positive Z-axis direction. Thereby, the 1st holding | maintenance part 101 will be in the state hold | maintained elastically similarly to the 2nd holding | maintenance part 201. FIG. The claw portion 411 includes a coil spring (not shown) on the surface facing the step 116 of the first holding portion 101, like the claw portion 422 of the second holding mechanism 402. Further, a plurality of first holding mechanisms 401 are provided on the outer peripheral portion of the first holding unit 101, similarly to the second holding mechanism 402.

  Incidentally, the first holding mechanism 401 and the second holding mechanism 402 further include a horizontal urging member that urges the first holding unit 101 and the second holding unit 201 in the horizontal direction with respect to the holding surfaces 113 and 213. Also good. This point will be described with reference to FIG. 9 with an example in which the second holding mechanism includes a horizontal urging member. FIG. 9 is a schematic side view of a second holding mechanism according to a modification.

  As illustrated in FIG. 9, the second holding mechanism 402 </ b> A according to the modification includes a support portion 425, a holding pin 426, and a horizontal biasing member 427. The support portion 425 is a member extending in the Z-axis direction, and a base end portion is fixed to the upper surface of the base portion 421.

  The holding pin 426 is a rod-like member extending in the horizontal direction (here, the X-axis direction), and the base end portion is supported by the support portion 425 so as to be able to advance and retreat. The distal end portion of the holding pin 426 abuts on the side wall portion 218 connected to the holding surface 213 and the step 216 of the second holding portion 201. Further, a locking portion 426 a having a diameter larger than that of the holding pin 426 is formed in the middle portion of the holding pin 426.

  The horizontal biasing member 427 is provided between the locking portion 426a of the holding pin 426 and the support portion 425, and biases the holding pin 426 in the horizontal direction (here, the X-axis positive direction). Thereby, the 2nd holding | maintenance part 201 is urged | biased by the horizontal direction toward a center part.

  As described above, the second holding mechanism 402A further includes the horizontal urging member 427, so that the displacement of the second holding unit 201 can be more reliably prevented.

  Here, an example in which the second holding mechanism 402A includes both the vertical urging member 423c and the horizontal urging member 427 has been described, but the second holding mechanism 402A does not include the vertical urging member 423c. It is good.

  In addition, the bonding portion 90 may be provided with a stopper for preventing a large positional shift of the target substrate W or the glass substrate S on the outer peripheral portion of the first holding portion 101 or the second holding portion 201. This will be described with reference to FIGS. 10A and 10B. FIG. 10A and FIG. 10B are diagrams showing a modification in the case of providing a stopper for preventing the displacement of the substrate W or the glass substrate S to be processed.

  As shown in FIG. 10A, the position shift preventing stopper 219 a is provided, for example, on the outer peripheral portion of the holding surface 213 of the second holding unit 201. As a result, even if the substrate to be processed W or the glass substrate S slides in the horizontal direction and a positional shift occurs, for example, a large positional shift is prevented by contacting the stopper 219a. The stopper 219a is preferably thicker than the glass substrate S and thinner than the total thickness of the substrate W, the glass substrate S, and the adhesive G.

  Further, as shown in FIG. 10B, a stopper 219b may be provided on the top of the bolt 13 provided at the step 216 of the second holding part 201. In such a case as well, as in the case shown in FIG. 10A, the substrate W or glass substrate S that has undergone misalignment comes into contact with the stopper 219b to prevent a large misalignment of the substrate W or glass substrate S. Can do.

  As shown in FIG. 10B, the bolt 13 is provided with a head having a predetermined gap d with respect to the upper surface of the step 216. Thereby, when the 2nd holding | maintenance part 201, the 2nd cooling mechanism 202, the 4th heating mechanism 203, and the spacer 204 are thermally extended in the perpendicular direction with a heating, the failure | damage of the 2nd holding | maintenance part 201 can be prevented. . In addition, the insertion hole 216 a of the bolt 13 is not a perfect circle, but is formed in an elliptical shape that is long in the radial direction of the second holding portion 201. Thereby, when the 2nd holding | maintenance part 201 heat-extends in a horizontal direction with a heating, damage to the 2nd holding | maintenance part 201 can be prevented.

  Returning to FIG. 4, the description of the joint 90 will be continued. The second holding part 201, the second cooling mechanism 202, the fourth heating mechanism 203, the spacer 204, the second chamber part 512, and each positioning pin 11 are each formed with a through hole penetrating in the vertical direction. Then, the second holding unit 201, the second cooling mechanism 202, the fourth heating mechanism 203, the spacer 204, the second chamber unit 512, and the positioning pins 11 are stacked, so that the second chamber unit 512 can be removed from the lower surface of the second chamber unit 512. 2 A through hole 205 penetrating to the upper surface of the holding part 201 is formed. A first temperature detector 301 for detecting the temperature of the glass substrate S is inserted through the through hole 205.

  The joining unit 90 includes a chamber 501, a moving mechanism 502, a decompression mechanism 503, a first imaging unit 504, and a second imaging unit 505.

  The chamber 501 is a processing container that can be sealed inside, and includes a first chamber portion 511 and a second chamber portion 512. The first chamber portion 511 is a bottomed cylindrical container having an open bottom, and includes a first holding portion 101, a first cooling mechanism 102, a third heating mechanism 103, a pressing portion 104, and a pressure vessel 161 inside. The second temperature detection unit 302, the first holding mechanism 401, and the like are accommodated. The second chamber portion 512 is a bottomed cylindrical container with an open top, and includes a second holding portion 201, a second cooling mechanism 202, a fourth heating mechanism 203, a spacer 204, a second container, and the like. The holding mechanism 402 and the like are accommodated.

  The first chamber portion 511 is configured to be vertically movable by a lifting mechanism (not shown) such as an air cylinder. The first chamber portion 511 is lowered by the lifting mechanism and brought into contact with the second chamber portion 512, thereby forming a sealed space inside the chamber 501. A seal member 513 for ensuring the confidentiality of the chamber 501 is provided on the contact surface of the first chamber portion 511 with the second chamber portion 512. As the seal member 513, for example, an O-ring is used.

  The moving mechanism 502 is provided on the outer peripheral portion of the first chamber portion 511 and moves the first holding portion 101 in the horizontal direction via the first chamber portion 511. A plurality of (for example, five) such moving mechanisms 502 are provided on the outer peripheral portion of the first chamber portion 511, and four of the five moving mechanisms 502 are used for the horizontal movement of the first holding unit 101. The remaining one is used for the rotation of the first holding unit 101 around the vertical axis.

  The moving mechanism 502 includes a cam 521 that contacts the outer peripheral portion of the first chamber portion 511 and moves the first holding portion 101, and a rotation drive portion 523 that rotates the cam 521 via the shaft 522. The cam 521 is provided eccentrically with respect to the central axis of the shaft 522. Then, by rotating the cam 521 by the rotation driving unit 523, the center position of the cam 521 with respect to the first holding unit 101 moves, and the first holding unit 101 can be moved in the horizontal direction.

  The decompression mechanism 503 is provided, for example, below the second chamber portion 512 and decompresses the interior of the chamber 501. The decompression mechanism 503 includes an intake pipe 531 for taking in the atmosphere in the chamber 501 and an intake device 532 such as a vacuum pump connected to the intake pipe 531.

  The first imaging unit 504 is disposed below the first holding unit 101 and images the surface of the substrate W to be processed held by the first holding unit 101. The second imaging unit 505 is disposed above the second holding unit 201 and images the surface of the glass substrate S held by the second holding unit 201.

  The first image pickup unit 504 and the second image pickup unit 505 are configured to be movable in a horizontal direction by a moving mechanism (not shown), and enter the chamber 501 before the first chamber unit 511 is lowered, and the substrate to be processed. W and the glass substrate S are imaged. The imaging data of the first imaging unit 504 and the second imaging unit 505 are transmitted to the control device 5. As the first imaging unit 504 and the second imaging unit 505, for example, wide-angle CCD cameras are used.

<4. Operation of the joint>
Next, the processing procedure of the bonding process performed by the bonding unit 90 configured as described above will be described with reference to FIGS. 11A and 11B. FIG. 11A and FIG. 11B are explanatory diagrams illustrating an operation example of the joining process.

  In the bonding unit 90, first, the substrate to be processed W is held by the first holding unit 101, and the glass substrate S is held by the second holding unit 201. At this time, the first holding unit 101 and the second holding unit 201 are preheated to the first temperature by the first heating mechanism 117 of the first holding unit 101 and the second heating mechanism 217 of the second holding unit 201. It has become. The first temperature is, for example, a temperature of 200 ° C. or lower.

  At this time, the third heating mechanism 103 and the fourth heating mechanism 203 also heat at the same first temperature as the first heating mechanism 117 and the second heating mechanism 217. Thereby, the curvature of the 1st cooling mechanism 102 and the 2nd cooling mechanism 202 is suppressed, and the failure | damage of the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 is prevented.

  Subsequently, an alignment process is performed at the joint 90. In the alignment step, the first imaging unit 504 and the second imaging unit 505 shown in FIG. 4 move in the horizontal direction and enter the chamber 501 to image the surfaces of the substrate W and the glass substrate S, respectively.

  Thereafter, the position of the reference point of the substrate W to be processed displayed in the image captured by the first imaging unit 504, and the position of the reference point of the glass substrate S displayed in the image captured by the second imaging unit 505 The horizontal position of the substrate W to be processed is adjusted by the moving mechanism 502 so that the two match. Thus, the horizontal position of the substrate W to be processed with respect to the glass substrate S is adjusted.

  Subsequently, after the first imaging unit 504 and the second imaging unit 505 are withdrawn from the chamber 501, the first chamber unit 511 is lowered by a moving mechanism (not shown). Then, when the first chamber portion 511 comes into contact with the second chamber portion 512, a sealed space is formed in the chamber 501 (see FIG. 11A).

  Subsequently, a decompression process is performed at the joint 90. In such a decompression process, the interior of the chamber 501 is decompressed by the intake of the atmosphere in the chamber 501 by the decompression mechanism 503. As described above, since the first holding unit 101 and the second holding unit 201 are elastically held by the first holding mechanism 401 and the second holding mechanism 402, there is no possibility of causing a positional shift during the decompression process. .

  Thereafter, a temperature raising step is performed at the joint 90. In the temperature raising step, the target substrate W and the glass substrate S are heated by the first heating mechanism 117 of the first holding unit 101 and the second heating mechanism 217 of the second holding unit 201. In such a temperature raising step, the temperature of the substrate to be processed W and the glass substrate S is raised from the first temperature to the second temperature. The second temperature is, for example, a temperature of 300 ° C. or higher.

  At this time, the third heating mechanism 103 and the fourth heating mechanism 203 are also heated to the second temperature at the same temperature increase rate as the first heating mechanism 117 and the second heating mechanism 217. Thereby, the curvature of the 1st cooling mechanism 102 and the 2nd cooling mechanism 202 is suppressed, and the failure | damage of the 1st holding | maintenance part 101 and the 2nd holding | maintenance part 201 is prevented.

  Subsequently, in the joint portion 90, the main joining process is performed. In this main joining process, the inside of the pressure vessel 161 is brought to a desired pressure by supplying gas to the pressure vessel 161. Thereby, the 1st holding | maintenance part 101 falls and the to-be-processed substrate W and the glass substrate S are pressurized by desired pressure (refer FIG. 11B). The adhesive G applied to the bonding surface Wj of the substrate to be processed W is softened by the temperature rise to the second temperature, and the substrate to be processed W is pressed against the glass substrate S with a desired pressure. The substrate W and the glass substrate S are bonded.

  In addition, it can prevent that a void arises between the to-be-processed substrate W and the glass substrate S by making the inside of the chamber 501 into a pressure-reduced atmosphere.

  Subsequently, a temperature lowering process is performed at the joint 90. In such a temperature lowering process, the temperature of the target substrate W and the glass substrate S is decreased to the first temperature while maintaining the state where the target substrate W and the glass substrate S are pressurized by the pressurizing mechanism 106. Thereby, the softened adhesive G hardens | cures and the to-be-processed substrate W and the glass substrate S are joined.

  The superposed substrate T thus formed is lifted from the joining portion 90 by the transport unit 80 after the first chamber unit 511 is lifted by a moving mechanism (not shown), and transported to the cassette Ct in the above-described procedure.

<5. About Temporary Joining Process>
By the way, in the joining system 1 which concerns on this embodiment, it is supposed that the glass substrate S is used as a support substrate and an electrostatic chuck is used as the 2nd holding | maintenance part 201 holding this glass substrate S. FIG. Further, in the bonding system 1 according to the present embodiment, as described above, the temperature raising step for raising the temperature in the chamber 501 from the first temperature to the second temperature is performed.

  A high voltage is applied to the second holding unit 201 in order to electrostatically attract the glass substrate S. Moreover, 2nd temperature is temperature more than the glass transition point which the glass substrate S has. For this reason, when the temperature is raised to the second temperature in a state where the glass substrate S is electrostatically adsorbed using the second holding unit 201 that is an electrostatic chuck, sodium ions in the glass substrate S are moved to the second holding unit. There is a possibility that sodium moves to the contact surface with 201 and precipitates.

  If precipitation of sodium occurs, there is a possibility that problems such as surface deterioration of the second holding part 201 and alteration of the glass substrate S may occur. Although it is conceivable to cancel the electrostatic adsorption of the glass substrate S by the second holding unit 201 during the temperature raising step, it is not preferable because the glass substrate S may be displaced.

  Therefore, in the bonding system 1 according to the present embodiment, the target substrate W and the glass substrate S are held by the first holding unit 101 and the second holding unit 201, respectively, and then they are applied with a pressure and temperature lower than those in the main bonding step. Then, a temporary bonding step of temporary bonding was performed, and thereafter, the electrostatic adsorption by the second holding unit 201 was released, and then the temperature raising step was performed.

  This temporary joining step will be specifically described with reference to FIG. FIG. 12 is a timing chart showing the procedure of the bonding process according to the present embodiment.

  As shown in FIG. 12, in the joining part 90, after the alignment process is completed, the first chamber part 511 is lowered and the decompression process is performed. In the pressure reducing process, the pressure in the chamber 501 is reduced from the atmospheric pressure atm to the desired pressure Pc2. Specifically, the pressure in the chamber 501 is reduced from the atmospheric pressure atm to the pressure Pc1, and then switched to another intake device (not shown) having a stronger intake force than the intake device 532 (see FIG. 4). The pressure is reduced to the pressure Pc2.

  Thereafter, a temporary joining step is performed. In such a temporary bonding step, the first holding unit 101 is lowered using the pressurizing mechanism 106 to bring the substrate W to be processed into contact with the glass substrate S and at a pressure Pb1 lower than the pressure Pb2 at the time of main bonding. Pressurize both.

  At this time, the electrostatic chucks 111 and 211 of the first holding unit 101 and the second holding unit 201 are turned on, but the temperature in the chamber 501 is equal to or lower than the glass transition point of the glass substrate S. The first temperature T1. For this reason, there is no possibility of precipitation of sodium from the glass substrate S.

  Note that the pressure Pb1 in the temporary joining step is, for example, the same pressure as the atmospheric pressure. Since the inside of the chamber 501 is in a decompressed state, the substrate to be processed W and the glass substrate S are in a pressurized state even at atmospheric pressure.

  After the temporary bonding step is completed, the bonding unit 90 releases the electrostatic adsorption by the electrostatic adsorption units 111 and 211, and pressurizes the target substrate W and the glass substrate S with the applied pressure Pb1 in the first state. The temperature rise from the temperature T1 to the second temperature T2 is started. Then, after reaching the second temperature T2, the bonding unit 90 performs the main bonding of the target substrate W and the glass substrate S with a desired pressure Pb2 using the pressurizing mechanism 106.

  As described above, in the bonding system 1 according to the present embodiment, since electrostatic adsorption by the electrostatic adsorption units 111 and 211 is canceled before the temperature increase is started, the subsequent temperature increase process, bonding process, and temperature decrease process are performed. In this case, there is no possibility that sodium precipitates from the glass substrate S. Further, even if the electrostatic adsorption by the electrostatic adsorption units 111 and 211 is canceled, the substrate W to be processed and the glass substrate S are temporarily bonded, so that the substrate W to be processed and the glass substrate S are misaligned. There is no risk of causing.

  Therefore, according to the bonding system 1 according to the present embodiment, it is possible to prevent the precipitation of sodium from the glass substrate S while preventing the positional displacement between the target substrate W and the glass substrate S.

  Note that, here, after temporarily bonding the target substrate W and the glass substrate S, the electrostatic adsorption by the electrostatic adsorption units 111 and 211 is released. It may be simultaneous with the joining step. That is, the bonding unit 90 may release the electrostatic chucking by the electrostatic chucking units 111 and 211 at the timing when the target substrate W and the glass substrate S are in contact with each other in the temporary bonding process, for example. Thereby, electrostatic adsorption can be canceled earlier while preventing the positional displacement of the target substrate W and the glass substrate S.

  In addition, here, the temperature increase to the second temperature T2 is started after the electrostatic adsorption by the electrostatic adsorption units 111 and 211 is cancelled, but the temperature increase to the second temperature T2 is started. The timing may be simultaneous with the release of electrostatic adsorption or before the release of electrostatic adsorption. That is, the electrostatic adsorption by the electrostatic adsorption units 111 and 211 may be canceled before the temperature reaches at least the glass transition point of the glass substrate S.

  Here, the substrate W and the glass substrate S are electrostatically attracted using the electrostatic attracting portions 111 and 211 during the alignment process and the decompression process. However, if the target substrate W and the glass substrate S are electrostatically adsorbed in an atmospheric environment and then depressurized to a desired pressure, discharge may occur during the depressurization (Paschen's law). W and glass substrate S may be damaged.

  For this reason, in the alignment step, the bonding portion 90 holds the substrate W and the glass substrate S by suction using the vacuum suction portions 112 and 212, and thereafter, after the pressure reduction has progressed to some extent in the pressure reduction step, It is good also as switching to electrostatic attraction by adsorption parts 111,211. Thereby, damage to the to-be-processed substrate W and the glass substrate S by discharge can be prevented.

  In the main bonding step, the state in which the substrate W and the glass substrate S are pressurized at the second temperature T2 and the desired pressure Pb2 is maintained for a predetermined time. In the main joining process, the pressure in the chamber 501 changes from Pc2 to Pc3.

  Thereafter, in the joint portion 90, the temperature in the chamber 501 is lowered from the second temperature T2 to the first temperature T1 using the first cooling mechanism 102 and the second cooling mechanism 202. At this time, it is possible to prevent warpage of the superposed substrate T by lowering the temperature of the substrate to be processed W and the glass substrate S while being pressed with a desired pressure Pb2. In the temperature lowering process, the pressure in the chamber 501 is returned from Pc3 to the atmospheric pressure atm. Then, the superposition | polymerization board | substrate T is carried out from the junction part 90, and a series of joining processes are complete | finished.

<6. About fail-safe processing>
Next, a processing procedure of fail-safe processing using the first temperature detection units 301 and 303 and the second temperature detection units 302 and 304 will be described with reference to FIG. FIG. 13 is a flowchart illustrating a processing procedure of fail-safe processing. Note that the fail-safe process shown in FIG. 13 is performed, for example, during the temperature raising process and the main joining process described above.

  Here, a processing procedure when the warp of the first cooling mechanism 102 is detected using the first temperature detection unit 303 and the second temperature detection unit 302 will be described. The process of detecting the warpage of the second cooling mechanism 202 using the first temperature detection unit 301 and the second temperature detection unit 304 is in parallel with the process for the first cooling mechanism 102 described below and in the same processing procedure. Done.

  As shown in FIG. 13, the control device 5 acquires the detection result of the first temperature detection unit 303, that is, the temperature of the substrate W to be processed (step S101), and the detection result of the second temperature detection unit 302, that is, Then, the temperature of the outer peripheral portion of the first cooling mechanism 102 is acquired (step S102). Subsequently, the control device 5 determines whether or not the temperature difference between the substrate W to be processed and the outer periphery of the first cooling mechanism 102 is equal to or greater than a threshold value (step S103).

  And in this process, when it determines with a temperature difference being more than a threshold value (step S103, Yes), the control apparatus 5 instruct | indicates a heating stop with respect to the junction part 90 (step S104), and complete | finishes a fail safe process. To do. As a result, the joining unit 90 stops the first heating mechanism 117, the second heating mechanism 217, the third heating mechanism 103, and the fourth heating mechanism 203. On the other hand, when the temperature difference between the substrate W to be processed and the outer peripheral portion of the first cooling mechanism 102 is not equal to or greater than the threshold value (No at Step S103), the control device 5 repeats the processes at Steps S101 to S103, for example.

  By performing such fail-safe processing, even if warpage occurs in the first cooling mechanism 102 and the second cooling mechanism 202 in the joining system 1 according to the present embodiment, further warping occurs. This can be prevented, and damage to the first holding unit 101 and the second holding unit 201 can be prevented.

  As described above, the joining device 45 according to the present embodiment includes the first holding unit 101, the second holding unit 201, the pressurizing mechanism 106, the first cooling mechanism 102, the second cooling mechanism 202, A third heating mechanism 103 and a fourth heating mechanism 203 are provided.

  The first holding unit 101 includes a first heating mechanism 117 and holds a substrate to be processed W that is a first substrate. The 2nd holding | maintenance part 201 is arrange | positioned facing the 1st holding | maintenance part 101, has the 2nd heating mechanism 217, and hold | maintains the glass substrate S which is a 2nd board | substrate. The pressurizing mechanism 106 moves the first holding unit 101 and the second holding unit 201 relatively to bring the substrate W to be processed and the glass substrate S into contact with each other and pressurize them. The first cooling mechanism 102 is provided on the side opposite to the holding surface 113 of the first holding unit 101, and cools the substrate W to be processed via the first holding unit 101. The second cooling mechanism 202 is provided on the opposite side of the holding surface 213 of the second holding unit 201, and cools the glass substrate S via the second holding unit 201. The third heating mechanism 103 is provided on the side of the first cooling mechanism 102 opposite to the side where the first holding unit 101 is disposed, and heats the first cooling mechanism 102. The fourth heating mechanism 203 is provided on the side of the second cooling mechanism 202 opposite to the side where the second holding unit 201 is disposed, and heats the second cooling mechanism 202.

  Therefore, according to the joining device 45 according to the present embodiment, the first holding unit 101 and the second holding unit 201 can be prevented from being damaged.

  In addition, the joining device 45 according to the present embodiment includes the first holding unit 101, the second holding unit 201, the pressure mechanism 106, the first holding mechanism 401, and the second holding mechanism 402. The first holding mechanism 401 and the second holding mechanism 402 elastically hold the outer peripheral portions of the first holding unit 101 and the second holding unit 201.

  Therefore, according to the joining apparatus 45 according to the present embodiment, it is possible to prevent displacement of the first holding unit 101 and the second holding unit 201.

  In addition, the bonding method according to the present embodiment includes a first holding process, a second holding process, a temporary bonding process, a temperature raising process, and a main bonding process. In the first holding step, the substrate W to be processed is held. In the second holding step, the glass substrate S is held by electrostatic adsorption. In the temporary bonding step, after the first holding step and the second holding step, the target substrate W and the glass substrate S are temporarily bonded at a pressure lower than the desired pressure and lower than the desired temperature. In the temperature raising step, the electrostatic adsorption of the glass substrate S is canceled simultaneously with or after the temporary joining step, and the temperature is raised to a desired temperature. In the main bonding step, the target substrate W and the glass substrate S are main bonded with a desired pressure after the temperature raising step.

  Therefore, according to the bonding method according to the present embodiment, sodium precipitation from the glass substrate S can be prevented.

  In the embodiment described above, after the application and heat treatment of the adhesive G to the substrate to be processed W is performed in the coating / heat treatment block G1, the substrate to be processed W and the glass substrate S are bonded in the bonding processing block G2. It was. However, when the target substrate W to which the adhesive G has been applied in advance is handled, the processing in the coating / heat treatment block G1 may be omitted. In such a case, the bonding system 1 does not necessarily include the application / heat treatment block G1.

  In the embodiment described above, the control device 5 controls the first holding unit 101, the second holding unit 201, the pressurizing mechanism 106, and the like included in the bonding device 45. A control unit that controls the first holding unit 101, the second holding unit 201, the pressure mechanism 106, and the like may be provided.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Substrate S Glass substrate T Polymerized substrate 1 Bonding system 2 Loading / unloading station 4 Bonding station 5 Controller 45 Bonding device 90 Bonding device 101 First holding unit 102 First cooling mechanism 103 Third heating mechanism 106 Pressure mechanism 111 Static Electrosorption unit 117 First heating mechanism 201 Second holding unit 202 Second cooling mechanism 203 Fourth heating mechanism 211 Electrostatic adsorption unit 217 Second heating mechanism 301, 303 First temperature detection unit 302, 304 Second temperature detection unit 401 First holding mechanism 402 Second holding mechanism 501 Chamber

Claims (8)

A first holding step for holding a substrate to be processed;
A second holding step of holding the glass substrate by electrostatic adsorption;
After the first holding step and the second holding step, a temporary bonding step of temporarily bonding the substrate to be processed and the glass substrate at a pressure lower than a desired pressure and a temperature not higher than the glass transition point of the glass substrate. When,
Simultaneously with the temporary bonding step or after the temporary bonding step, releasing the electrostatic adsorption of the glass substrate, raising the temperature to a temperature above the glass transition point ,
And a main bonding step of performing main bonding between the substrate to be processed and the glass substrate with the desired pressure after the temperature raising step. 2. The method according to claim 1, further comprising: a decompression step of decompressing a chamber in which the substrate to be processed and the glass substrate are accommodated after the first holding step and the second holding step and before the temporary bonding step. The joining method described. A first cooling mechanism that is provided on the opposite side of the holding surface of the first holding unit that holds the substrate to be processed, and that cools the substrate to be processed via the first holding unit, A first cooling step for cooling the substrate to be processed;
The glass after the main joining step using a second cooling mechanism that is provided on the opposite side of the holding surface of the second holding unit that holds the glass substrate and that cools the glass substrate through the second holding unit. A second cooling step for cooling the substrate,
The temperature raising step includes
A first heating step of heating the substrate to be processed using a first heating mechanism provided in the first holding unit;
A second heating step of heating the glass substrate using a second heating mechanism provided in the second holding unit;
A third heating step of heating the first cooling mechanism using a third heating mechanism that is provided on the opposite side of the first cooling mechanism to the side where the first holding unit is disposed and heats the first cooling mechanism. When,
A fourth heating step of heating the second cooling mechanism using a fourth heating mechanism that is provided on the opposite side of the second cooling mechanism to the side on which the second holding unit is disposed and heats the second cooling mechanism. The bonding method according to claim 1, wherein the bonding method includes: A first temperature detecting step of detecting a temperature of the substrate to be processed or the glass substrate in the temperature raising step;
A second temperature detecting step of detecting a temperature of the first cooling mechanism or the second cooling mechanism in the temperature raising step;
When the difference between the temperature of the substrate to be processed or the glass substrate and the temperature of the first cooling mechanism or the second cooling mechanism is greater than or equal to a threshold value, the first heating mechanism, the second heating mechanism, the third 4. A joining method according to claim 3, further comprising: a heating mechanism and a heating stopping step of stopping heating by the fourth heating mechanism. A first holding unit having a first heating mechanism and holding a substrate to be processed;
A second holding unit that is disposed opposite to the first holding unit, has a second heating mechanism, and holds the glass substrate;
A pressurizing mechanism that pressurizes the substrate to be processed and the glass substrate by bringing the first holding unit and the second holding unit into contact with each other; and
A control unit that controls the first holding unit, the second holding unit, and the pressurizing mechanism;
The controller is
The first holding unit, the second holding unit, and the pressurizing mechanism are controlled so that the substrate to be processed and the glass substrate are at a pressure lower than a desired pressure and a temperature lower than the glass transition point of the glass substrate. Temporary bonding, and simultaneously with the temporary bonding or after the temporary bonding, after the electrostatic adsorption of the glass substrate by the second holding unit is released and the temperature is raised to a temperature equal to or higher than the glass transition point , the substrate to be processed And the glass substrate are bonded together at the desired pressure. A first cooling mechanism that is provided on the opposite side of the holding surface of the first holding unit and cools the substrate to be processed via the first holding unit;
A second cooling mechanism that is provided on the opposite side of the holding surface of the second holding unit and cools the glass substrate via the second holding unit;
A third heating mechanism that is provided on the opposite side of the first cooling mechanism to the side on which the first holding unit is disposed, and that heats the first cooling mechanism;
The bonding according to claim 5 , further comprising: a fourth heating mechanism that is provided on a side opposite to the side on which the second holding unit is disposed of the second cooling mechanism and that heats the second cooling mechanism. apparatus. A chamber in which the first holding unit and the second holding unit are accommodated;
Bonding apparatus according to claim 5 or 6, characterized in that it comprises a pressure reducing mechanism for reducing the pressure within the chamber. A loading / unloading station on which a substrate to be processed and a glass substrate are placed;
A substrate transfer device for transferring the substrate to be processed and the glass substrate placed on the loading / unloading station;
A bonding station where a bonding apparatus for bonding the substrate to be processed and the glass substrate transferred by the substrate transfer device is installed;
A control unit for controlling the joining device,
The joining device includes:
A first holding unit having a first heating mechanism and holding the substrate to be processed;
A second holding unit that is disposed to face the first holding unit, has a second heating mechanism, and holds the glass substrate;
A pressurizing mechanism that pressurizes the substrate to be processed and the glass substrate by bringing the first holding unit and the second holding unit into contact with each other; and
With
The controller is
The first holding unit, the second holding unit, and the pressurizing mechanism are controlled so that the substrate to be processed and the glass substrate are at a pressure lower than a desired pressure and a temperature lower than the glass transition point of the glass substrate. Temporary bonding, and simultaneously with the temporary bonding or after the temporary bonding, after the electrostatic adsorption of the glass substrate by the second holding unit is released and the temperature is raised to a temperature equal to or higher than the glass transition point , the substrate to be processed And the glass substrate are bonded together at the desired pressure.

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