JP6596330B2 - Joining apparatus, joining system, joining method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a bonding apparatus for bonding substrates, a bonding system including the bonding apparatus, a bonding method using the bonding apparatus, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger and thinner. Such a large-diameter and thin semiconductor substrate (hereinafter referred to as a substrate to be processed) may be warped or cracked during transport or polishing. For this reason, the substrate to be processed is reinforced by attaching a support substrate to the substrate to be processed.

  For example, Patent Document 1 discloses a bonding apparatus that bonds a target substrate and a support substrate via an adhesive. In the bonding apparatus, first, the surface of the substrate to be processed held by the first holding unit and the surface of the support substrate held by the second holding unit are respectively imaged, and the reference of the substrate to be processed in the captured image is obtained. The relative horizontal position of the substrate to be processed and the support substrate is adjusted so that the point matches the reference point of the support substrate in the captured image. Thereafter, in a state where the inside of the processing container is decompressed and maintained in a vacuum state by the decompression mechanism, the second holding unit is pressed toward the first holding unit by the pressurizing mechanism, and the target substrate and the support substrate are joined.

JP2013-115124A

  However, in the bonding method described in Patent Document 1, the second holding unit is moved to the first holding unit side after the relative position of the substrate to be processed and the support substrate is adjusted in advance. In some cases, the second holding portion may move in the horizontal direction, and the relative position between the substrate to be processed and the support substrate may be shifted. Such misalignment during bonding affects the bonding accuracy between the substrate to be processed and the support substrate. Particularly in recent years, the demand for bonding strength has increased, and there is room for improvement in the bonding process.

  This invention is made | formed in view of this point, and it aims at improving the joining precision by aligning board | substrates appropriately and joining them.

In order to achieve the above object, the present invention is a bonding apparatus for bonding substrates, the first holding unit for holding the first substrate, the first holding unit and the second holding unit. A second holding unit that holds the first substrate, and a pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in the vertical direction. A position adjusting unit that moves the first holding unit and the second holding unit relatively in the horizontal direction to adjust a relative position between the first holding unit and the second holding unit; A first imaging unit that images the surface of the first substrate held by the first holding unit, and a second imaging unit that images the surface of the second substrate held by the second holding unit And at least a target provided in the first holding unit or the second holding unit, a detection unit for detecting the target, After the relative position is adjusted based on the imaging result of the first imaging unit and the imaging result of the second imaging unit, the first holding unit and the second holding unit are further relative to each other by the pressing unit. from beginning to move in the vertical direction, so as to adjust the relative position based on the detection result by the detecting unit, have a, and a control unit for controlling the position adjustment unit, the target, the first Provided on either the surface of the holding unit or the surface of the second holding unit, the detection unit is a third imaging unit that images the target, and the second is not provided with the target. An objective lens is provided inside the holding unit or inside the first holding unit .
Another aspect of the present invention is a bonding apparatus for bonding substrates, the first holding unit that holds the first substrate, and the second holding substrate that is disposed to face the first holding unit. A second holding unit, a pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction, and the first A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in the horizontal direction; and A first imaging unit that images the surface of the first substrate held by the holding unit, a second imaging unit that images the surface of the second substrate held by the second holding unit, and at least the A target provided in the first holding unit or the second holding unit, a detection unit that detects the target, and the first imaging unit After adjusting the relative position based on the imaging result by the second imaging unit and the imaging result by the second imaging unit, the first holding unit and the second holding unit are relatively moved in the vertical direction by the pressurizing unit. A control unit that controls the position adjustment unit so as to adjust the relative position based on a detection result by the detection unit from the start of movement, and the target is a surface of the first holding unit. Or provided on either surface of the second holding unit, and the detection unit is a third imaging unit that images the target, and the outside of the second holding unit in which the target is not provided Alternatively, an objective lens is provided outside the first holding portion.
Another aspect of the present invention is a bonding apparatus for bonding substrates, the first holding unit that holds the first substrate, and the second holding substrate that is disposed to face the first holding unit. A second holding unit, a pressure unit that moves the first holding unit and the second holding unit relatively in the vertical direction to press the first substrate and the second substrate, and the first holding unit. A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in the horizontal direction; and A first imaging unit that images the surface of the first substrate held by the holding unit, a second imaging unit that images the surface of the second substrate held by the second holding unit, and at least the A target provided in the first holding unit or the second holding unit, a detection unit that detects the target, and the first imaging unit After adjusting the relative position based on the imaging result by the second imaging unit and the imaging result by the second imaging unit, the first holding unit and the second holding unit are relatively moved in the vertical direction by the pressing unit. A control unit that controls the position adjustment unit so as to adjust the relative position based on a detection result by the detection unit from the start of movement, and the target is a surface of the first holding unit. Or it is provided in any one of the surface of the said 2nd holding | maintenance part in uneven | corrugated shape, The said detection part is a displacement meter which detects the said target, It is characterized by the above-mentioned.

  According to the present invention, the relative position of the first substrate and the second substrate can be adjusted in two steps. In the following description, the position adjustment process based on the imaging result by the imaging unit is referred to as a first adjustment process, and the position adjustment based on the detection result by the detection unit is referred to as a second adjustment process. In such a case, after the first adjustment step, when the first holding unit and the second holding unit are relatively moved in the vertical direction by the pressurizing unit, the first holding unit and the second holding unit are moved. Even if the relative position shifts in the horizontal direction, the relative position between the first substrate and the second substrate can be finely adjusted in the second adjustment step. Therefore, it is possible to join the substrates in a state where the positions of the substrates are appropriately adjusted, and it is possible to improve the joining accuracy.

  The bonding apparatus further includes a chamber in which the first holding unit and the second holding unit are housed, the inside of which can be sealed, and a decompression unit that decompresses the atmosphere inside the chamber, The detection unit may be provided outside the chamber.

Before Symbol objective lens may through the cooling plate be provided in the second holding portion or the first holding portion.

According to another aspect of the present invention, there is provided a bonding system including the bonding apparatus, a processing station including the bonding apparatus;
And a loading / unloading station for loading / unloading the first substrate, the second substrate, or the superposed substrate obtained by bonding the first substrate and the second substrate to / from the processing station. Yes.

Another aspect of the present invention is a bonding method for bonding substrates using a bonding apparatus, wherein the bonding apparatus includes a first holding unit that holds a first substrate and the first holding unit. And a second holding unit that holds the second substrate, and the first holding unit and the second holding unit are relatively moved in the vertical direction to move the first substrate and the second substrate. The relative positions of the first holding unit and the second holding unit are moved by relatively moving the pressurizing unit that presses the substrate, the first holding unit, and the second holding unit in the horizontal direction. A position adjusting unit to be adjusted, a first imaging unit that images the surface of the first substrate held by the first holding unit, and a surface of the second substrate held by the second holding unit A second imaging unit for imaging, a target provided at least in the first holding unit or the second holding unit, and the target A first adjustment step of adjusting the relative position based on an imaging result by the first imaging unit and an imaging result by the second imaging unit; Thereafter, the first holding unit and the second holding unit are moved relatively in the vertical direction by the pressing unit, and then the second position is adjusted based on the detection result by the detecting unit. an adjustment step, have a, the target is the provided to either the first holding portion of the surface or the second holding portion of the surface, the detection unit, the third image pickup for imaging the target In the second adjustment step, the third imaging unit images the target to detect the position, and the relative position is adjusted based on the detection result .
According to another aspect of the present invention, there is provided a bonding method for bonding substrates using a bonding apparatus, wherein the bonding apparatus includes: a first holding unit that holds a first substrate; and the first holding unit. A second holding unit that is disposed opposite to hold the second substrate, and the first holding unit and the second holding unit are relatively moved in the vertical direction by moving the first holding unit and the second holding unit relatively. The pressurizing unit that presses the first holding unit, the first holding unit, and the second holding unit are relatively moved in the horizontal direction to adjust the relative positions of the first holding unit and the second holding unit. An image of the surface of the second substrate held by the second holding unit, and a first imaging unit that images the surface of the first substrate held by the first holding unit. A second imaging unit, a target provided in at least the first holding unit or the second holding unit, and the target. A first adjustment step of adjusting the relative position based on an imaging result by the first imaging unit and an imaging result by the second imaging unit, and thereafter The second adjustment that adjusts the relative position based on the detection result by the detection unit after the first holding unit and the second holding unit are relatively moved in the vertical direction by the pressurizing unit. And the target is provided in an uneven shape on either the surface of the first holding unit or the surface of the second holding unit, and the detection unit detects the target In the second adjustment step, the position of the target is detected by measuring the unevenness of the target with the displacement meter, and the relative position is adjusted based on the detection result.

  The bonding apparatus further includes a chamber in which the first holding unit and the second holding unit are housed, the inside of which can be sealed, and a decompression unit that decompresses the atmosphere inside the chamber, The detection unit is provided outside the chamber, the first adjustment step is performed in an air atmosphere with the chamber open, and the second adjustment step is a reduced-pressure atmosphere with the chamber sealed. It may be done at.

Prior Symbol second adjusting step, the third image pickup unit may be imaging the target through the objective lens.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the joining device so that the joining method is executed by the joining device.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, it is possible to appropriately adjust the positions of the substrates and bond the substrates to improve the bonding accuracy.

It is a top view which shows the outline of a structure of the joining system concerning this embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this embodiment. It is a side view of a to-be-processed substrate and a support substrate. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a top view which shows the outline of a structure of a position adjustment part. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that a chamber is sealed and pressure-reduced. It is explanatory drawing which shows a mode that the position of a to-be-processed substrate and a support substrate is adjusted based on the detection result by a detection part, after raising a 1st holding | maintenance part with a pressurization part. It is explanatory drawing which shows a mode that a 1st holding | maintenance part is raised with a pressurization part, and a to-be-processed wafer and a support wafer are made to contact. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. In the present embodiment, a bonding process for bonding substrates together will be described as a substrate process of the present invention. In addition, this invention is not limited by embodiment shown below.

<1. Structure of joining system>
First, the structure of the joining system which concerns on this embodiment is demonstrated with reference to FIGS. 1-3. FIG. 1 is a plan view showing an outline of the configuration of the joining system. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system. FIG. 3 is a side view of a substrate to be processed as a first substrate and a support substrate as a second substrate. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  In the following, as shown in FIG. 3, the plate surface of the substrate W to be processed that is bonded to the support substrate S via the adhesive G is referred to as “bonding surface Wj”, and the bonding surface Wj Is referred to as the “non-bonding surface Wn”. In addition, among the plate surfaces of the support substrate S, the plate surface on the side bonded to the substrate W to be processed via the adhesive G is referred to as “bonding surface Sj”, and the plate surface on the opposite side to the bonding surface Sj is referred to as “ This is referred to as “non-joint surface Sn”.

  The substrate W to be processed is a substrate in which a plurality of electronic circuits (devices) are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and a plate surface on the side where the electronic circuits are formed is used as a bonding surface Wj. . The substrate W to be processed is thinned by polishing the non-bonded surface Wn after bonding to the support substrate S.

  On the other hand, the support substrate S as a support substrate is a substrate having the same diameter as the substrate to be processed W, and supports the substrate to be processed W. As the support substrate S, a glass substrate or the like can be used in addition to a silicon wafer.

  As shown in FIG. 1, the bonding system 1 carries in and out cassettes Cw, Cs, and Ct that can accommodate a plurality of substrates W, a plurality of support substrates S, and a plurality of superposed substrates T, respectively, with the outside. The loading / unloading station 2 and the processing station 3 including various processing apparatuses for performing predetermined processing on the substrate W to be processed, the support substrate S, and the superposed substrate T are integrally connected.

  The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y-axis direction (vertical direction in FIG. 1). The cassettes Cw, Cs, and Ct can be placed on these cassette placement plates 11 when the cassettes Cw, Cs, and Ct are carried into and out of the joining system 1. As described above, the carry-in / out station 2 is configured to be capable of holding a plurality of substrates to be processed W, a plurality of support substrates S, and a plurality of superposed substrates T.

  In addition, the number of the cassette mounting plates 11 is not limited to this embodiment, and can be determined arbitrarily. One of the cassettes may be used for collecting defective substrates. That is, it is a cassette that can separate a substrate in which a problem occurs in joining of the substrate to be processed W and the support substrate S due to various factors from another normal superposed substrate T. In the present embodiment, among the plurality of cassettes Ct, one cassette Ct is used for collecting defective substrates, and the other cassette Ct is used for accommodating normal superposed substrates T.

  In the carry-in / out station 2, a first substrate transfer region 20 is provided adjacent to the cassette mounting table 10. The first substrate transport region 20 is provided with a first substrate transport device 22 that is movable on a transport path 21 extending in the Y-axis direction. The first substrate transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and the cassettes Cw, Cs, Ct on each cassette mounting plate 11 and the third of the processing station 3 to be described later. The substrate to be processed W, the support substrate S, and the superposed substrate T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (Y-axis negative direction side in FIG. 1), and on the back side of the processing station 3 (Y-axis positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (X-axis negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the target substrate W and the support substrate S via the adhesive G are arranged in this order from the loading / unloading station 2 side in the X-axis direction. Are arranged side by side. The number and arrangement of the joining devices 30 to 33 can be arbitrarily set. Moreover, the structure of the joining apparatuses 30-33 is mentioned later.

  For example, in the second processing block G2, as shown in FIG. 2, the coating apparatus 40 that applies the adhesive G to the substrate W to be processed and the substrate W to which the adhesive G is applied are heated to a predetermined temperature. Heat treatment apparatuses 41 to 43 and similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 side (X-axis negative direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  As the coating device 40, for example, a coating device described in JP2013-115124A can be used. That is, the coating apparatus 40 includes a spin chuck that holds and rotates the substrate to be processed W, and an adhesive nozzle that supplies the adhesive G onto the substrate W to be processed held by the spin chuck.

  As said heat processing apparatus 41-46, the heat processing apparatus of Unexamined-Japanese-Patent No. 2013-115124 can be used, for example. That is, the heat treatment apparatuses 41 to 46 include a heating unit that heat-processes the substrate W to be processed and a temperature adjustment unit that adjusts the temperature of the substrate W to be processed. In the heat treatment apparatuses 41 to 46, the temperature of the superposed substrate T can also be adjusted. Furthermore, in order to adjust the temperature of the superposed substrate T, a temperature adjusting device (not shown) may be provided in the second processing block G2. The temperature control device has the same configuration as the heat treatment devices 41 to 46 described above, and a temperature control plate is used instead of the hot plate. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  For example, in the third processing block G3, transition devices 50 and 51 for the target substrate W, the support substrate S, and the superposed substrate T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a second substrate transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a second substrate transfer device 61 is disposed in the second substrate transfer region 60.

  The second substrate transfer device 61 includes a transfer arm that can move around the vertical direction, the horizontal direction (X-axis direction, Y-axis direction), and the vertical axis, for example. The second substrate transfer device 61 moves in the second substrate transfer region 60 and covers the predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. The processing substrate W, the support substrate S, and the superposed substrate T can be transported.

  The above joining system 1 is provided with a controller 70 as shown in FIG. The control unit 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the substrate to be processed W, the support substrate S, and the superposed substrate T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 70 from the storage medium H.

<2. Structure of joining device>
Next, the structure of the joining apparatuses 30 to 33 described above will be described. In addition, below, the structure of the joining apparatus 30 is demonstrated, Since the structure of the joining apparatuses 31-33 is the same as that of the joining apparatus 30, description is abbreviate | omitted.

  As shown in FIG. 4, the joining apparatus 30 has a processing container 100 capable of sealing the inside. A loading / unloading port 101 for the substrate W to be processed, the support substrate S, and the superposed substrate T is formed on the side surface of the processing container 100 on the second substrate transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Is provided.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. The inner wall 102 is also provided with a loading / unloading port 103 for the substrate W to be processed, the support substrate S, and the superposed substrate T.

  In the pretreatment region D1, a delivery unit 110 for delivering the substrate to be processed W, the support substrate S, and the superposed substrate T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. The delivery unit 110 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the target substrate W, the support substrate S, and the superposed substrate T at the same time. For example, the substrate W to be processed or the support substrate S before bonding may be delivered by one delivery unit 110, and the superposed substrate T after joining may be delivered by another delivery unit 110. Alternatively, the substrate W to be processed before bonding may be delivered by one delivery unit 110 and the support substrate S before joining may be delivered by another delivery unit 110.

  As the delivery unit 110, for example, a delivery unit described in JP2013-115124A can be used. That is, the delivery unit 110 includes a delivery arm 111 and a support pin 112. The delivery arm 111 can deliver the substrate W to be processed, the support substrate S, and the superposed substrate T between the second substrate transfer device 61 and the support pins 112. The support pins 112 are provided in a plurality of, for example, three locations, and can support the substrate to be processed W, the support substrate S, and the superposed substrate T.

  On the X-axis negative direction side of the pretreatment region D1, that is, on the loading / unloading port 103 side, a reversing unit 120 that reverses the front and back surfaces of the support substrate S is provided, for example, vertically above the delivery unit 110.

  As the reversing unit 120, for example, a reversing unit described in JP2013-115124A can be used. In other words, the reversing unit 120 has a holding arm 121 that holds the support substrate S and the substrate W to be processed. The holding arm 121 extends in the horizontal direction (Y-axis direction in FIG. 4). The holding arm 121 is provided with holding members 122 for holding the supporting substrate S and the substrate W to be processed, for example, at four locations. The holding arm 121 is supported by a driving unit 123 including, for example, a motor. By this drive unit 123, the holding arm 121 is rotatable about the horizontal axis and can move in the horizontal direction (X-axis direction and Y-axis direction in FIG. 4). Further, the holding arm 121 can be moved in the vertical direction along the support pillar 124 extending in the vertical direction by the driving unit 123.

  An orientation adjusting unit 125 that adjusts the orientation of the support substrate S and the target substrate W held by the holding member 122 in the horizontal direction is supported by the support pillar 124 via a support plate 126. The orientation adjustment unit 125 includes a base 127 and a detection unit 128 that detects the positions of the support substrate S and the notch portion of the substrate W to be processed. The orientation adjustment unit 125 detects the positions of the notch portions of the support substrate S and the substrate W to be processed by the detection unit 128 while moving the support substrate S and the substrate W to be processed held in the holding member 122 in the horizontal direction. As a result, the position of the notch portion is adjusted to adjust the horizontal orientation of the support substrate S and the substrate W to be processed.

  The delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 120 is arranged vertically above the delivery unit 110. That is, the delivery arm 111 of the delivery unit 110 moves in the horizontal direction below the holding arm 121 and the orientation adjustment unit 125 of the reversing unit 120. Further, the support pin 112 of the delivery unit 110 is disposed below the holding arm 121 of the reversing unit 120.

  On the X axis positive direction side of the bonding region D2, a transfer unit 130 for transferring the substrate to be processed W, the support substrate S, and the superposed substrate T is provided for the delivery unit 110, the reversing unit 120, and the bonding unit 140 described later. ing. The conveyance unit 130 is attached to the loading / unloading port 103.

  As the conveyance unit 130, for example, a conveyance unit described in JP2013-115124A can be used. That is, the transport unit 130 includes a plurality of, for example, two transport arms 131. The two transfer arms 131 are arranged in two stages in this order from the bottom in the vertical direction, and the back surface of the substrate to be processed W, the support substrate S, and the superposed substrate T (non-bonded in the substrate to be processed W and the support substrate S). A transport arm that holds and transports the surfaces Wn and Sn) and a transport arm that transports while holding the outer surface of the surface of the support substrate S, that is, the bonding surface Sj. For example, an arm driving unit 132 including a motor is provided at the base end of the transfer arm 131. Each arm 131 can move in the horizontal direction independently by the arm driving unit 132. The transfer arm 131 and the arm driving unit 132 are supported by the base 133.

  A bonding portion 140 that presses and bonds the target substrate W and the support substrate S via the adhesive G is provided on the X axis negative direction side of the bonding region D2.

  As shown in FIG. 5, the joint 140 has a chamber 200 that can seal the inside. The chamber 200 accommodates a first holding unit 300 and a second holding unit 400 to be described later. The chamber 200 is made of a metal such as aluminum.

  The chamber 200 is divided into two parts, and includes a first chamber 201 on the first holding unit 300 side (lower side) and a second chamber 202 on the second holding unit 400 (upper side). . The first chamber 201 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder. A sealing material 203 for maintaining the airtightness of the interior of the chamber 200 is provided on the joint surface of the first chamber 201 with the second chamber 202. For example, an O-ring is used as the sealing material 203. Then, by bringing the first chamber 201 and the second chamber 202 into contact with each other, the inside of the chamber 200 is formed in a sealed space.

  The first chamber 201 is provided with a decompression unit 210 that decompresses the atmosphere in the chamber 200. The decompression unit 210 includes an intake pipe 211 for taking in the atmosphere in the chamber 200 and an intake device 212 such as a vacuum pump connected to the intake pipe 211. The first chamber 201 may be provided with a gas supply mechanism (not shown) that supplies an inert gas such as nitrogen gas into the chamber 200.

  The bonding unit 140 includes a first holding unit 300 that places and holds the target substrate W on the upper surface, and a second holding unit 400 that holds the supporting substrate S on the lower surface by suction. The first holding unit 300 is provided below the second holding unit 400 and is arranged to face the second holding unit 400. That is, the substrate W to be processed held by the first holding unit 300 and the support substrate S held by the second holding unit 400 are arranged to face each other.

  For the first holding unit 300, for example, an electrostatic chuck for electrostatically attracting the substrate W to be processed is used. For the first holding unit 300, ceramic having thermal conductivity or the like is used. The first holding unit 300 is connected to, for example, a DC high-voltage power supply (not shown). Then, an electrostatic force can be generated on the surface of the first holding unit 300 to electrostatically attract the substrate W to be processed onto the first holding unit 300.

  A first heating mechanism 301 that heats the substrate to be processed W is provided inside the first holding unit 300. For the first heating mechanism 301, for example, a ceramic heater that can be used in a reduced-pressure atmosphere is used. The heating temperature of the substrate W to be processed by the first heating mechanism 301 is controlled by the control unit 70, for example.

  A first cooling mechanism 302 is provided on the lower surface side of the first holding unit 300. As the first cooling mechanism 302, for example, a metal cooling jacket can be used, and the first holding unit 300 is held by cooling the first holding unit 300 using a cooling fluid such as cold water as a medium. The processed substrate W is cooled.

  A first support plate 303 is provided on the lower surface side of the first cooling mechanism 302. The first support plate 303 is provided so as to be able to contact and separate from the upper surface of the first chamber 201. A heat insulating plate (not shown) may be further provided between the first cooling mechanism 302 and the first support plate 303.

  Below the first holding unit 300, a pressurizing unit 310 that moves the first holding unit 300 in the vertical direction and presses the target substrate W and the support substrate S is provided. The pressure unit 310 includes a shaft 311 and a drive unit 312.

  The shaft 311 is connected to the lower surface side of the first support plate 303 and is provided so as to penetrate the first chamber 201. Further, the shaft 311 is configured to be extendable. The drive unit 312 is supported by the support member 313, and expands and contracts the shaft 311 in the vertical direction to move the first holding unit 300 in the vertical direction.

  A bellows 314 is provided on the outer periphery of the shaft 311. One end of the bellows 314 is connected to the lower surface of the first chamber 201, and the other end is connected to the drive unit 312. With the bellows 314, the first holding unit 300 can be moved from the outside of the chamber 200 while ensuring the hermeticity of the chamber 200.

  The drive unit 312 is provided with a bracket 315 that supports a light emitting unit 521 of the detection unit 520 described later. The drive unit 312 expands and contracts the bracket 315 and the shaft 311 in synchronization. Further, below the first holding unit 300, lifting pins (not shown) for supporting the substrate to be processed W or the superposed substrate T from below and raising and lowering them are provided.

  For the second holding unit 400, for example, an electrostatic chuck for electrostatically adsorbing the support substrate S is used. The second holding part 400 is made of ceramic having thermal conductivity. The second holding unit 400 is connected to, for example, a DC high-voltage power supply (not shown). Then, an electrostatic force can be generated on the surface of the second holding unit 400, and the support substrate S can be electrostatically adsorbed on the second holding unit 400.

  A second heating mechanism 401 that heats the support substrate S is provided inside the second holding unit 400. For the second heating mechanism 401, for example, a ceramic heater that can be used in a reduced pressure atmosphere is used. The heating temperature of the support substrate S by the second heating mechanism 401 is controlled by the control unit 70, for example.

  A second cooling mechanism 402 is provided on the upper surface side of the second holding unit 400. As the second cooling mechanism 402, for example, a metal cooling jacket can be used, and the second holding unit 400 is held by the second holding unit 400 by cooling the second holding unit 400 using a cooling fluid such as cold water as a medium. The support substrate S is cooled.

  A second support plate 403 is provided on the upper surface side of the second cooling mechanism 402. The second support plate 403 is supported by being suspended by a suspension mechanism (not shown), and is disposed in a state where a gap is formed between the second support plate 403 and the lower surface of the second chamber 202. A heat insulating plate (not shown) may be further provided between the second cooling mechanism 402 and the second support plate 403.

  The second support plate 403 is provided with a position adjustment unit 410 that moves the second holding unit 400 in the horizontal direction and adjusts the relative positions of the first holding unit 300 and the second holding unit 400. Yes.

  As shown in FIG. 6, the position adjustment unit 410 has a plurality of, for example, two moving mechanisms 411. Of the two moving mechanisms 411, for example, one moving mechanism 411x moves the second holding unit 400 in the X-axis direction, and the other moving mechanism 411y moves the second holding unit 400 in the Y-axis direction. The number of the moving mechanisms 411x and 411y can be arbitrarily set.

  As shown in FIG. 5, the moving mechanism 411 x has a shaft 412 and a drive unit 413. The shaft 412 is attached to a shaft portion 414 provided at the lower surface end portion of the second support plate 403, and is provided so as to penetrate the second chamber 202. The shaft 412 is configured to be extendable and contractible. The drive unit 413 extends and contracts the shaft 412 in the horizontal direction (X-axis direction), and moves the second holding unit 400 in the horizontal direction.

  A bellows 415 is provided on the outer periphery of the shaft 412. One end of the bellows 415 is connected to the opening on the side surface of the second chamber 202, and the other end is connected to a flange 416 attached to the shaft 412. With the bellows 415, the second holding unit 400 can be moved from the outside of the chamber 200 while ensuring the hermeticity of the chamber 200.

  The moving mechanism 411y has the same configuration as the moving mechanism 411x, and moves the second holding unit 400 in the horizontal direction (Y-axis direction). These moving mechanisms 411x and 411y can rotate the second holding unit 400 about the vertical axis while moving the second holding unit 400 in the horizontal direction (X-axis direction and Y-axis direction).

  Between the 1st holding | maintenance part 300 and the 2nd holding | maintenance part 400, the 1st imaging part 500 which images the surface of the to-be-processed substrate W hold | maintained at the 1st holding | maintenance part 300, and 2nd holding | maintenance A second imaging unit 501 that images the surface of the support substrate S held by the unit 400 is provided integrally with the front and back sides. For example, a CCD camera is used for each of the first imaging unit 500 and the second imaging unit 501. The first imaging unit 500 and the second imaging unit 501 can be moved in the vertical direction and the horizontal direction by a moving mechanism (not shown), and can be moved between the inside and the outside of the chamber 200. Has been.

  A target 510 is provided on the outer surface of the first holding unit 300 so as to protrude in the horizontal direction from the outer surface. That is, the target 510 is provided in the first holding unit 300 that moves in the vertical direction among the first holding unit 300 and the second holding unit 400. As will be described later, when the first holding unit 300 moves up, the first holding unit 300 may move in the horizontal direction. By grasping the position of the target 510, the first holding unit 300 The amount of shift in the horizontal direction can be confirmed. In addition, although the planar shape of the front-end | tip part of the target 510 is arbitrary, it is a triangular shape, for example.

  A detection unit 520 that detects the target 510 is provided outside the chamber 200. The detection unit 520 is a sensor including a light emitting unit 521 and a light receiving unit 522, and measures the two-dimensional dimensions of the target 510. Note that a general two-dimensional measuring device is used for the detection unit 520, and the configuration of the detection unit 520 is arbitrary as long as the two-dimensional dimension of the target 510 is measured.

  The light emitting unit 521 is provided to face the tip of the target 510 outside the first chamber 201. The light emitting unit 521 is a light emitting diode (LED), for example, and emits short wavelength LED light. The light emitting unit 521 is supported by a bracket 315, and the bracket 315 is configured to be extendable and contractable in the vertical direction by a driving unit 312. The drive unit 312 expands and contracts the bracket 315 and the shaft 311 in synchronization. For this reason, the light emission part 521 and the 1st holding | maintenance part 300 move to a perpendicular direction synchronously. Note that the first chamber 201 facing the light emitting unit 521 is provided with a transmission window 201a that transmits LED light. For the transmission window 201a, a material that prevents the reflection of the LED light while transmitting the LED light, such as quartz glass, is used.

  The light receiving unit 522 is provided outside the second chamber 202 and on the upper surface of the second chamber 202 so as to face the light emitting unit 521 (the tip of the target 510). The second chamber 202 in which the light receiving unit 522 is provided is provided with a transmission window 202a that transmits LED light. The transmission window 202a is made of a material that transmits LED light and prevents reflection of LED light, such as quartz glass.

  The detection unit 520 having such a configuration measures the two-dimensional dimensions of the target 510 when the LED light emitted from the light emitting unit 521 is received by the light receiving unit 522 through the target 510. Then, the position of the target 510 is detected from the measured two-dimensional dimensions of the target 510.

  In addition, operation | movement of each part in the joining apparatuses 30-33 is controlled by the control part 70 mentioned above.

<3. Operation of joining system>
Next, a method for bonding the substrate to be processed W and the support substrate S performed using the bonding system 1 configured as described above will be described. FIG. 7 is a flowchart showing an example of main steps of the joining process.

  First, a cassette Cw that accommodates a plurality of substrates to be processed W, a cassette Cs that accommodates a plurality of support substrates S, and an empty cassette Ct are placed on a predetermined cassette placement plate 11 of the carry-in / out station 2. The Thereafter, the substrate to be processed W in the cassette Cw is taken out by the first substrate transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward.

  Next, the substrate W to be processed is transferred to the coating apparatus 40 by the second substrate transfer device 61. The to-be-processed substrate W carried into the coating device 40 is transferred from the second substrate transport device 61 to the spin chuck and is sucked and held. At this time, the non-joint surface Wn of the substrate to be processed W is held by suction. Then, the adhesive G is supplied from the adhesive nozzle to the bonding surface Wj of the target substrate W while rotating the target substrate W by the spin chuck. The supplied adhesive G is diffused over the entire bonding surface Wj of the substrate to be processed W by centrifugal force, and the adhesive G is applied to the bonding surface Wj of the substrate to be processed W (step A1 in FIG. 7).

  Next, the substrate W to be processed is transferred to the heat treatment apparatus 41 by the second substrate transfer apparatus 61. In the heat treatment apparatus 41, first, the substrate to be processed W is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. by the heating unit (step A2 in FIG. 7). By performing such heating, the adhesive G on the substrate W to be processed is heated and the adhesive G is cured. Thereafter, the temperature adjustment unit adjusts the temperature of the substrate to be processed W to a predetermined temperature, for example, 23 ° C., which is normal temperature.

  Next, the substrate W to be processed is transferred to the bonding apparatus 30 by the second substrate transfer device 61. The substrate to be processed W transferred to the bonding apparatus 30 is transferred from the second substrate transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the support pins 112. Thereafter, the substrate W to be processed is transferred from the support pin 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

  The to-be-processed substrate W transported to the reversing unit 120 is held by the holding member 122 and moved to the orientation adjusting unit 125. Then, the orientation adjusting unit 125 adjusts the position of the notch portion of the substrate to be processed W to adjust the horizontal direction of the substrate to be processed W (step A3 in FIG. 7).

  Thereafter, the substrate W to be processed is transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the second chamber 202 is located above the first chamber 201, the second chamber 202 and the first chamber 201 are not in contact with each other, and the inside of the chamber 200 is formed in a sealed space. Absent. The substrate W to be processed transferred to the bonding unit 140 is placed and held on the first holding unit 300 (step A4 in FIG. 7). On the first holding unit 300, the substrate to be processed W is held in a state where the bonding surface Wj of the substrate to be processed W faces upward, that is, in a state where the adhesive G faces upward.

  While the processes A1 to A4 described above are performed on the target substrate W, the support substrate S is processed subsequent to the target substrate W. The support substrate S is transferred to the bonding apparatus 30 by the second substrate transfer device 61. In addition, about the process by which the support substrate S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support substrate S transferred to the bonding apparatus 30 is transferred from the second substrate transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the support pins 112. Thereafter, the support substrate S is transported from the support pins 112 to the reversing unit 120 by the transport arm 131 of the transport unit 130.

  The support substrate S transported to the reversing unit 120 is held by the holding member 122 and moved to the orientation adjusting unit 125. Then, the orientation adjusting unit 125 adjusts the position of the notch portion of the support substrate S to adjust the horizontal direction of the support substrate S (step A5 in FIG. 7). The support substrate S whose horizontal direction is adjusted is moved in the horizontal direction from the direction adjustment unit 125 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 7). That is, the bonding surface Sj of the support substrate S is directed downward.

  Thereafter, the support substrate S is moved downward in the vertical direction, and is then transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, since the transfer arm 131 holds only the outer peripheral portion of the bonding surface Sj of the support substrate S, the bonding surface Sj is not contaminated by particles or the like attached to the transfer arm 131, for example. The support substrate S transported to the bonding unit 140 is sucked and held by the second holding unit 400 (step A7 in FIG. 7). In the second holding unit 400, the support substrate S is held in a state where the bonding surface Sj of the support substrate S faces downward.

  In the bonding unit 140, first, horizontal position adjustment (first time) between the target substrate W held by the first holding unit 300 and the support substrate S held by the second holding unit 400 is performed. A plurality of predetermined reference points are formed on the surface of the substrate to be processed W and the surface of the support substrate S. The plurality of reference points is, for example, a total of three points including two points on the outer periphery and one point on the notch portion.

  As shown in FIG. 5, the first imaging unit 500 and the second imaging unit 501 are moved in the horizontal direction in an air atmosphere with the chamber 200 opened, and the surface of the substrate W to be processed and the support substrate S The surface is imaged simultaneously. Thereafter, the position of the reference point of the substrate W to be processed displayed in the image captured by the first imaging unit 500, and the position of the reference point of the support substrate S displayed in the image captured by the second imaging unit 501 So that the second holding unit 400 is moved in the horizontal direction by the position adjusting unit 410 so that the horizontal position (including the horizontal direction) of the support substrate S is adjusted. In this way, the horizontal relative position between the substrate to be processed W and the support substrate S is adjusted (step A8 in FIG. 7).

  Thereafter, after the first imaging unit 500 and the second imaging unit 501 are withdrawn from the outside of the chamber 200, the first chamber 201 is raised by an elevating mechanism (not shown). Then, as shown in FIG. 8, the second chamber 202 and the first chamber 201 are brought into contact with each other, and the inside of the chamber 200 constituted by the second chamber 202 and the first chamber 201 becomes a sealed space. It is formed.

  Thereafter, the atmosphere in the chamber 200 is sucked by the decompression unit 210, and the inside of the chamber 200 is decompressed to a vacuum state (step A9 in FIG. 7). In the present embodiment, the inside of the chamber 200 is depressurized to a predetermined vacuum pressure, for example, 10 Pa or less.

  Thereafter, as shown in FIG. 9, the first holding unit 300 is raised by the pressurizing unit 310 (step A10 in FIG. 7). At this time, the first holding unit 300 is moved until the distance between the target substrate W held by the first holding unit 300 and the support substrate S held by the second holding unit 400 becomes 0.5 mm, for example. Raise. Further, the light emitting unit 521 is also raised in synchronization with the first holding unit 300.

  Thereafter, the horizontal position adjustment (second time) between the target substrate W held by the first holding unit 300 and the support substrate S held by the second holding unit 400 is performed. At this time, the target substrate W and the support substrate S are heated at a predetermined temperature, for example, 100 ° C. to 400 ° C. by the heating mechanisms 301 and 401. This predetermined temperature is the same as the temperature at the time of bonding of the target substrate W and the support substrate S.

  As illustrated in FIG. 9, the detection unit 520 causes the LED light emitted from the light emitting unit 521 to be received by the light receiving unit 522 through the target 510, whereby the two-dimensional dimension of the target 510 is measured. Then, the position of the target 510 is detected from the measured two-dimensional dimensions of the target 510, and the second holding unit 400 is moved in the horizontal direction by the position adjusting unit 410 based on the detection result, thereby supporting substrate S. The horizontal position (including the horizontal direction) is adjusted. In this way, the horizontal relative position between the substrate to be processed W and the support substrate S is adjusted (step A11 in FIG. 7).

  As described above, the first position adjustment of the target substrate W and the support substrate S is performed in step A8. When the first holding unit 300 is raised in step A10, the first holding unit 300 is moved in the horizontal direction. May move to. Even in such a case, since the second position adjustment of the target substrate W and the support substrate S is performed by detecting the position of the target 510 provided in the first holding unit 300 in step A11, the target substrate W is processed. And the relative position of the support substrate S can be finely adjusted.

  Thereafter, as shown in FIG. 10, the first holding unit 300 is further raised by the pressure unit 310, and the entire surface of the substrate W to be processed and the entire surface of the support substrate S come into contact with each other. Since the chamber 200 is maintained in a vacuum state, generation of voids between the substrate to be processed W and the support substrate S is suppressed even when the substrate to be processed W and the support substrate S are brought into contact with each other. Can do. Further, the pressure at which the first holding unit 300 is pressed by the pressing unit 310 is set according to the type of the adhesive G, the type of the device on the substrate W to be processed, and the like.

  Thus, when the to-be-processed substrate W and the support substrate S are pressed by the pressurization part 310, the to-be-processed substrate W and the support substrate S are heated by predetermined | prescribed temperature, for example, 100 to 400 degreeC by the heating mechanisms 301 and 401. In this way, by pressing the second holding unit 400 with a predetermined pressure by the pressure unit 310 while heating the support substrate S and the target substrate W at a predetermined temperature, the target substrate W and the support substrate S are brought into contact with each other. It is more strongly bonded and bonded (step A12 in FIG. 7).

  Note that the substrate W to be processed and the support substrate S may be cooled to a predetermined temperature by the cooling mechanisms 302 and 402 after the step A12.

  Thereafter, the first chamber 201 is lowered and the inside of the chamber 200 is opened to the atmosphere. Then, the superposed substrate T on which the target substrate W and the support substrate S are bonded is transferred from the bonding unit 140 to the delivery unit 110 by the transfer arm 131 of the transfer unit 130. The superposed substrate T transferred to the transfer unit 110 is transferred to the transfer arm 111 via the support pins 112, and further transferred from the transfer arm 111 to the second substrate transfer device 61.

  Thereafter, the superposed substrate T is transferred to the transition device 51 by the second substrate transfer device 61, and then transferred to the cassette Ct of the predetermined cassette mounting plate 11 by the first substrate transfer device 22 of the loading / unloading station 2. . In this way, a series of bonding processing of the target substrate W and the support substrate S is completed.

  According to the above embodiment, the relative position of the to-be-processed substrate W and the support substrate S can be adjusted in two steps, step A8 and step A11. Then, after the position adjustment is performed in step A8, even if the relative position between the substrate to be processed W and the support substrate S shifts when the first holding unit 300 is raised in step A10, the relative position in step A11 Can be fine-tuned. Therefore, it is possible to bond the target substrate W and the support substrate S in a state where the position is appropriately adjusted, and to improve the bonding accuracy.

  Further, since the position adjustment in the step A11 is performed in a reduced pressure atmosphere, it is difficult to provide detection means such as a camera or a sensor inside the chamber 200, for example. In this regard, the detection unit 520 is provided outside the chamber 200, and the detection unit 520 has a high degree of freedom in selection.

  In addition, since the substrate to be processed W and the support substrate S are heated to the same temperature as the bonding at the step A12 in the step A11, the stretch of the substrate to be processed W and the support substrate S is the same in the steps A11 and A12. It is. For this reason, there is no position shift of the to-be-processed substrate W and the support substrate S caused by thermal elongation, and the bonding accuracy can be further improved.

  Furthermore, since the bonding system 1 includes the bonding devices 30 to 33, the coating device 40, and the heat treatment devices 41 to 46, the processing target substrate W is sequentially processed to apply the adhesive G to the processing target substrate W. While heating to predetermined | prescribed temperature, the front and back of the support substrate S is reversed in the joining apparatus 30. FIG. Then, in the joining apparatus 30, the to-be-processed substrate W coated with the adhesive G and heated to a predetermined temperature is joined to the support substrate S whose front and back surfaces are reversed. Thus, according to this embodiment, the to-be-processed substrate W and the support substrate S can be processed in parallel. In addition, while the substrate to be processed W and the support substrate S are bonded in the bonding apparatus 30, another substrate to be processed W and the support substrate S can be processed in the coating apparatus 40, the heat treatment apparatus 41, and the bonding apparatus 30. Therefore, the substrate W to be processed and the support substrate S can be bonded efficiently, and the throughput of the bonding process can be improved.

<4. Other embodiments>
Next, another embodiment of the present invention will be described.

<4-1. Other embodiments>
In the joint 140 of the above embodiment, the target 510 is provided on the outer surface of the first holding unit 300. However, the target 510 is connected to the outer surface of the first holding unit 300 and the second surface as shown in FIG. The holding part 400 may be provided on both outer surfaces. In such a case, the detection unit 420 detects the position of the target 510 held by the first holding unit 300 and detects the relative position of the two targets 510. In this manner, the relative position of the two targets 510 is detected, and the position of the target 510 provided in the second holding unit 400 is detected, whereby the operation of the position adjusting unit 410 provided in the second holding unit 400 is detected. It is also possible to confirm. Therefore, it is possible to improve the accuracy of position adjustment between the substrate to be processed W and the support substrate S.

  Alternatively, for example, when the pressure unit 310 presses the second holding unit 400 instead of the first holding unit 300, the target 510 may be provided on the outer surface of the second holding unit 400. That is, as described above, the target 510 is provided in the first holding unit 300 or the second holding unit 400 that moves in the vertical direction.

  Regardless of whether the distance between the light emitting unit 521 and the light receiving unit 522 is constant or unchanged, the detecting unit 520 can detect the position of the target 510 by adjusting the number of targets 510.

<4-2. Other embodiments>
In the joining part 140 of the above embodiment, it replaces with the target 510 and the detection part 520, and the target 600 and the detection part 610 may be provided as shown in FIG. The target 600 is provided on the surface of the second holding unit 400. The planar shape of the target 600 is arbitrary, and the presence or absence of unevenness is also arbitrary.

  For example, a CCD camera as a third imaging unit is used as the detection unit 610, and the detection unit 610 images the target 600. The detector 610 is provided to face the target 600 outside the first chamber 201. The detection unit 610 is supported by a bracket 315, and the bracket 315 is configured to be extendable and contractable in the vertical direction by a drive unit 312. The drive unit 312 expands and contracts the bracket 315 and the shaft 311 in synchronization. For this reason, the detection part 610 and the 1st holding | maintenance part 300 move to a perpendicular direction synchronously. Note that a transmission window 201 b is provided in the first chamber 201 facing the detection unit 610. For example, quartz glass is used for the transmission window 201a.

  A through-hole 611 is formed in the first holding unit 300, the first cooling mechanism 302, and the first support plate 303 at a position facing the target 600 and the detection unit 610. In the through hole 611, an objective lens 612 and a relay lens 613 are provided in this order from the target 600 side. The CCD camera which is the detection unit 610 has an acute aperture and may not be able to ensure resolution. In order to improve the resolution, an objective lens 612 and a relay lens 613 are used. For the objective lens 612 and the relay lens 613, a lens that can withstand the heating by the first heating mechanism 301 and has a pressure resistance to withstand a reduced pressure atmosphere is used.

  In such a case, in step A11, the detection unit 610 images the target 600, and the position of the target 600, that is, the position of the second holding unit 400 is detected. And based on the detection result of the detection part 610, the position holding part 410 moves the 2nd holding | maintenance part 400 to a horizontal direction, and the position of the horizontal direction of the support substrate S is adjusted. In this way, the horizontal relative position between the substrate to be processed W and the support substrate S is adjusted.

  Also in this embodiment, the same effect as the effect of the said embodiment can be enjoyed.

  In order to reduce the influence of heating by the first heating mechanism 301, a cooling plate 614 may be provided on the side surface of the through hole 611 in the first holding unit 300 as shown in FIG. Thereby, the freedom degree of selection of the objective lens 612 and the relay lens 613 can be raised.

  As shown in FIG. 14, the objective lens 612 and the relay lens 613 are provided outside the first holding unit 300, and the detection unit 610 is also provided at a position facing the objective lens 612 and the relay lens 613. Good. Even in such a case, a cooling plate 614 may be provided on the outer surface of the first holding unit 300 as shown in FIG.

  Further, the arrangement of the target 600 and the detection unit 610 is not limited to the above. For example, the target 600 may be provided on the surface of the first holding unit 300, and the detection unit 610 may be provided outside the second chamber 202 and on the upper surface of the second chamber 202 so as to face the target 600. Good.

<4-3. Other embodiments>
In the joining part 140 of the above embodiment, it replaces with the target 510 and the detection part 520, and the target 700 and the detection part 710 may be provided as shown in FIG.

  The target 700 is provided on the surface of the second holding unit 400. The target 700 is an indentation recessed from the second holding unit 400. In addition, although the planar shape of the target 700 is arbitrary, it is triangular, for example.

  The detection unit 710 has, for example, two laser displacement meters. The laser displacement meter measures the depth of the recess in the target 700. In the detection unit 710, one laser displacement meter measures the depth of the recess in the X-axis direction of the target 700, and the other laser deformation occurs in the Y-axis direction of the target 700. Measure the dent depth. The detection unit 710 detects the position of the target 700. Note that a general laser deformation meter is used for the detection unit 710, and the configuration of the detection unit 710 is arbitrary as long as the depth of the depression of the target 700 is measured.

  The detector 710 is provided to face the target 700 outside the first chamber 201. The detection unit 710 is supported by a bracket 315, and the bracket 315 is configured to be extendable and contractable in the vertical direction by a drive unit 312. The drive unit 312 expands and contracts the bracket 315 and the shaft 311 in synchronization. For this reason, the detection part 710 and the 1st holding | maintenance part 300 move to a perpendicular direction synchronously. Note that a transmission window 201 c is provided in the first chamber 201 facing the detection unit 710. For example, quartz glass is used for the transmission window 201c.

  A through hole 711 is formed in the first holding unit 300, the first cooling mechanism 302, and the first support plate 303 at a position facing the target 700 and the detection unit 710. The through hole 711 is a path of a laser emitted from the detection unit 710 toward the target 700.

  In this case, in step A11, the detection unit 710 detects the position of the target 700, that is, the position of the second holding unit 400. Then, based on the detection result of the detection unit 710, the position adjustment unit 410 moves the second holding unit 400 in the horizontal direction to adjust the horizontal position of the support substrate S. In this way, the horizontal relative position between the substrate to be processed W and the support substrate S is adjusted.

  Also in this embodiment, the same effect as the effect of the said embodiment can be enjoyed. In addition, since the detection unit 710 can also detect the height of the second holding unit 400, the joining accuracy can be further improved.

  Note that the arrangement of the target 700 and the detection unit 710 is not limited to the above. For example, the target 700 may be provided on the surface of the first holding unit 300, and the detection unit 710 may be provided outside the second chamber 202 and on the upper surface of the second chamber 202 so as to face the target 700. Good.

<4-4. Other embodiments>
In the above embodiment, after the first holding unit 300 is raised to a predetermined position in step A10, the position adjustment of the target substrate W and the support substrate S is performed in step A11. While raising 300, the position adjustment of the substrate to be processed W and the support substrate S in step A11 may be performed. That is, in step A11, the position adjustment of the substrate to be processed W and the support substrate S may be performed in real time.

  In the above embodiment, the pressurizing unit 310 presses the first holding unit 300, but the second holding unit 400 may be pressed, or the first holding unit 300 and the second holding unit may be pressed. Both parts 400 may be pressed.

  In the above embodiment, the position adjustment unit 410 moves the second holding unit 400 in the horizontal direction. However, the first holding unit 300 may move in the horizontal direction, or the first holding unit. Both 300 and the second holding part 400 may be moved in the horizontal direction.

  In the above embodiment, the substrate to be processed W and the support substrate S are bonded in a state where the substrate to be processed W is disposed on the lower side and the support substrate S is disposed on the upper side. The top and bottom arrangement of the support substrate S may be reversed. At this time, the first holding unit 300 may support the support substrate S, and the second holding unit 400 may support the substrate W to be processed. And the process A1-A4 mentioned above is performed with respect to the support substrate S, and the adhesive agent G is apply | coated to the joint surface Sj of the said support substrate S. Further, the above-described steps A5 to A7 are performed on the substrate W to be processed, and the front and back surfaces of the substrate W to be processed are reversed. And the process A8-A12 mentioned above is performed, and the to-be-processed substrate W and the support substrate S are joined.

  In the above embodiment, the adhesive G is applied to the bonding surface Wj of the substrate to be processed W. However, the adhesive G may be applied to the bonding surface Sj of the support substrate S, or The adhesive G may be applied to both the bonding surface Wj and the bonding surface Sj of the support substrate S.

  In the above embodiment, the target substrate W and the support substrate S are bonded via the adhesive G. However, the present invention can also be applied to the case where the target substrate W and the support substrate S are directly bonded. The present invention is not particularly limited to the bonding method, and can be applied when two substrates are bonded.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Joining system 2 Carrying in / out station 3 Processing station 30-33 Joining apparatus 70 Control part 140 Joining part 200 Chamber 210 Decompression part 300 1st holding | maintenance part 310 Pressurization part 400 2nd holding part 410 Position adjustment part 500 1st Imaging unit 501 Second imaging unit 510 Target 520 Detection unit 521 Light emission unit 522 Light reception unit 600 Target 610 Detection unit 612 Objective lens 613 Relay lens 614 Cooling plate 700 Target 710 Detection unit G Adhesive S Support substrate T Polymerization substrate W Processed substrate

Claims (12)

A joining device for joining substrates,
A first holding unit for holding a first substrate;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction;
A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in a horizontal direction;
A first imaging unit that images the surface of the first substrate held by the first holding unit;
A second imaging unit that images the surface of the second substrate held by the second holding unit;
At least a target provided in the first holding unit or the second holding unit;
A detection unit for detecting the target;
After adjusting the relative position based on the imaging result by the first imaging unit and the imaging result by the second imaging unit, the first holding unit and the second holding unit are further moved by the pressing unit. from the start to move relatively vertically, to adjust the relative position based on the detection result by the detecting unit, it has a, and a control unit for controlling the position adjustment unit,
The target is provided on either the surface of the first holding part or the surface of the second holding part,
The detection unit is a third imaging unit that images the target,
The bonding apparatus according to claim 1, wherein an objective lens is provided in the second holding unit or the first holding unit in which the target is not provided . A joining device for joining substrates,
A first holding unit for holding a first substrate;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction;
A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in a horizontal direction;
A first imaging unit that images the surface of the first substrate held by the first holding unit;
A second imaging unit that images the surface of the second substrate held by the second holding unit;
At least a target provided in the first holding unit or the second holding unit;
A detection unit for detecting the target;
After adjusting the relative position based on the imaging result by the first imaging unit and the imaging result by the second imaging unit, the first holding unit and the second holding unit are further moved by the pressing unit. A control unit that controls the position adjustment unit so as to adjust the relative position based on a detection result by the detection unit after starting to move relatively in the vertical direction;
The target is provided on either the surface of the first holding part or the surface of the second holding part,
The detection unit is a third imaging unit that images the target,
The bonding apparatus, wherein an objective lens is provided outside the second holding unit or outside the first holding unit, where the target is not provided. The objective lens is characterized in that provided in the second holding portion or the first holding portion via the cooling plate, the bonding apparatus according to claim 1 or 2. A joining device for joining substrates,
A first holding unit for holding a first substrate;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction;
A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in a horizontal direction;
A first imaging unit that images the surface of the first substrate held by the first holding unit;
A second imaging unit that images the surface of the second substrate held by the second holding unit;
At least a target provided in the first holding unit or the second holding unit;
A detection unit for detecting the target;
After adjusting the relative position based on the imaging result by the first imaging unit and the imaging result by the second imaging unit, the first holding unit and the second holding unit are further moved by the pressing unit. A control unit that controls the position adjustment unit so as to adjust the relative position based on a detection result by the detection unit after starting to move relatively in the vertical direction;
The target is provided in an uneven shape on either the surface of the first holding part or the surface of the second holding part,
The bonding device according to claim 1, wherein the detection unit is a displacement meter that detects the target. A chamber in which the first holding part and the second holding part are housed, and the inside can be sealed;
A decompression unit for decompressing the atmosphere inside the chamber,
The joining apparatus according to claim 1, wherein the detection unit is provided outside the chamber. It is a joining system provided with the joining device according to any one of claims 1 to 5 ,
A processing station comprising the joining device;
And a loading / unloading station for loading / unloading the first substrate, the second substrate, or the superposed substrate obtained by bonding the first substrate and the second substrate, to / from the processing station. A joining system. A bonding method for bonding substrates using a bonding apparatus,
The joining device includes:
A first holding unit for holding a first substrate;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction;
A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in a horizontal direction;
A first imaging unit that images the surface of the first substrate held by the first holding unit;
A second imaging unit that images the surface of the second substrate held by the second holding unit;
At least a target provided in the first holding unit or the second holding unit;
A detection unit for detecting the target,
The joining method is:
A first adjustment step of adjusting the relative position based on an imaging result by the first imaging unit and an imaging result by the second imaging unit;
Thereafter, the first holding unit and the second holding unit are moved relatively in the vertical direction by the pressing unit, and then the second position is adjusted based on the detection result by the detecting unit. possess an adjustment process, the,
The target is provided on either the surface of the first holding part or the surface of the second holding part,
The detection unit is a third imaging unit that images the target,
In the second adjustment step, the target is imaged by the third imaging unit to detect a position, and the relative position is adjusted based on the detection result . The joining method according to claim 7 , wherein in the second adjustment step, the third imaging unit images the target through an objective lens. A bonding method for bonding substrates using a bonding apparatus,
The joining device includes:
A first holding unit for holding a first substrate;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressure unit that presses the first substrate and the second substrate by relatively moving the first holding unit and the second holding unit in a vertical direction;
A position adjusting unit that adjusts a relative position between the first holding unit and the second holding unit by relatively moving the first holding unit and the second holding unit in a horizontal direction;
A first imaging unit that images the surface of the first substrate held by the first holding unit;
A second imaging unit that images the surface of the second substrate held by the second holding unit;
At least a target provided in the first holding unit or the second holding unit;
A detection unit for detecting the target,
The joining method is:
A first adjustment step of adjusting the relative position based on an imaging result by the first imaging unit and an imaging result by the second imaging unit;
Thereafter, the first holding unit and the second holding unit are moved relatively in the vertical direction by the pressing unit, and then the second position is adjusted based on the detection result by the detecting unit. An adjustment process,
The target is provided in an uneven shape on either the surface of the first holding part or the surface of the second holding part,
The detection unit is a displacement meter that detects the target,
In the second adjustment step, the position is detected by measuring the unevenness of the target with the displacement meter, and the relative position is adjusted based on the detection result. The joining device includes:
A chamber in which the first holding part and the second holding part are housed, and the inside can be sealed;
A decompression unit for decompressing the atmosphere inside the chamber,
The detector is provided outside the chamber,
The first adjustment step is performed in an air atmosphere with the chamber open.
10. The bonding method according to claim 7, wherein the second adjustment step is performed in a reduced-pressure atmosphere in a state in which the chamber is sealed. According to be executed by the welding apparatus is bonding method according to any one of claims 7-10, program running on the control unit of the computer for controlling the bonding apparatus. A readable computer storage medium storing the program according to claim 11 .

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