201137959 六、發明說明： 【發明所屬之技術領域】 本發明係關於用以接合具有金屬接合部之基板彼此的 接合裝置、接合方法及電腦記憶媒體。 【先前技術】 近年來，半導體裝置之高積體化持續進步。將高積體 化之複數之半導體裝置配置於水平面內，並以配線連結該 等半導體裝置來製品化時，必須擔心配線長度增大，進而 使配線之電阻變大，且配線延遲增大的問題。 所以，有人提出以利用3次元層合半導體裝置之3次元 積體技術的方案。該3次元積體技術時，例如，利用貼合 裝置，進行2片半導體晶圓（以下，稱爲「晶圓」。）之 貼合。貼合裝置，例如，具有：上面供晶圓載置之固定台 :及與該固定台相對配置，從下面吸附保持晶圓之可昇降 之可動台。於固定台及可動台內，分別內建有加熱器。其 次’該貼合裝置時，將2片晶圓重疊後，一邊以加熱器進 行晶圓之加熱’ 一邊以固定台及可動台施加荷重來推壓晶 圓，進行2片晶圓之貼合（專利文獻1 )。 [專利文獻1]日本特開2004-207436號公報 【發明內容】 然而’接合2片晶圓時，有時必須接合形成於晶圓表 面之金屬接合部彼此。此時，必須一邊以高溫之特定溫度 -5- 201137959 進行接合部之加熱並一邊進行推壓。亦即，首先 序執行：將晶圓加熱至特定溫度之前熱處理工程 於使晶圓之溫度維持於特定溫度之狀態下，推壓 接合工程；以及其後，進行晶圓之冷卻的後熱處 然而，此時，若使用專利文獻1之貼合裝置 許多時間才能接合2片晶圓。 首先，前熱處理工程時，因爲前述特定溫度 將晶圓加熱至特定溫度需要花費一些時間。而且 晶0急速加熱可能無法使接合部彼此獲得均一加 須以特定加熱速度以下來進行晶圓之冷卻。此外 述特定溫度爲高溫，於後熱處理工程時，冷卻高 也需要一些時間。而且，使接合部彼此合金化來 時，因爲使晶圆急速冷卻可能導致接合部之強度 改變，故必須以特定冷卻速度以下來進行晶圓之 外，接合工程所需要花費的時間，係由接合部所 料等來決定，故無法縮短。 如上所示，因爲具有金屬接合部之晶圓彼此 要較大時間，故會導致晶圆接合處理之處理量的 有鑑於上述諸點，本發明之目的係在有效莩 有金屬接合部之基板彼此的接合，並提高基板捱 處理量。 爲了達成前述目的，本發明，係用以接合I 合部之基板彼此的接合裝置，其特徵爲含有：I 抵接於前述接合部並重疊於基板之重合基板實孩 ，必須依 :其後， 該晶圓之 理工程。 ，則需要 爲高溫， ，因爲對 熱，故必 ，因爲前 溫之晶圓 進行接合 或物性的 冷卻。此 使用之材 的接合需 降低。 地進行具 合處理之 •有金屬接 .備用以對 丨熱處理之 -6 - 201137959 第1熱處理板、將前述第1熱處理板上之重合基板朝該第！ 熱處理板側推壓之加壓機構、及使內部環境減壓至特定真 空度爲止之第1減壓機構的接合單元；及具備用以對以前 述接合單元執行處理前之重合基板實施熱處理之第2熱處 理板、用以對以前述接合單元處理後之重合基板實施熱處 理之第3熱處理板、及使內部環境減壓至特定真空度爲止 之第2減壓機構；且，前述接合單元與前述熱處理單元， 係氣密地連結。 依據本發明之接合裝置，於接合單元及熱處理單元， 可以依序進行重合基板之處理。亦即，首先，於熱處理單 元時，由第2熱處理板對重合基板進行加熱。其後，將重 合基板搬運至接合單元，於該接合單元，在特定真空度之 環境下，一邊將重合基板載置第1熱處理板並使該重合基 板維持於特定溫度，一邊將重合基板朝前述第1熱處理板 側推壓來接合該重合基板。其後，將重合基板搬運至熱處 理單元，於該熱處理單元，由第3熱處理板對重合基板進 行冷卻。其次，於接合單元之處理重合基板的一個期間， 可以於熱處理單元，倂行處理另一重合基板。如上所示， 依據本發明，即使前述特定溫度爲高溫，可以同時有效率 地對2個重合基板進行處理，故可提高基板接合處理之處 理量。 亦可以爲如下所示之方式’亦即’前述第2熱處理板 ，係相對配置於前述第3熱處理板之上方’前述第2熱處理 板，吸附保持前述重合基板並進行熱處理’前述第3熱處 201137959 理板，用以載置前述重合基板並進行熱處理。 前述熱處理單元，亦可以具有：在該熱處理單元與前 述接合單元之間，於水平方向搬運前述重合基板，且，在 前述第2熱處理板與前述第3熱處理板之間，於垂直方向搬 運前述重合基板之搬運臂。 前述搬運臂，亦可以於垂直方向配置2支。 前述加壓機構，亦可具有：抵接前述第1熱處理板上 之重合基板並進行熱處理，且推壓該重合基板之推壓構件 〇 前述接合單元，亦可具有：用以冷卻前述第1熱處理 坂上之重合基板的冷卻板。 前述熱處理單元，亦可具有：用以冷卻前述第3熱處 理板上之重合基板的冷卻板◊ 前述加壓機構，亦可配設於前述接合單元之天花板， 而前述天花板可以於垂直方向自由移動。 依據本發明之其他觀點，係用以接合具有金屬接合部 之基板彼此的接合方法，其特徵係含有：於熱處理單元， 將抵接於前述接合部並重疊著基板之重合基板加熱至第1 溫度爲止之前熱處理工程：其後，將前述重合基板搬運至 接合單元，於該接合單元，在特定真空度環境下，將前述 重合基板載置於第1熱處理板並使該重合基板維持在高於 前述第1溫度之第2溫度，並將前述重合基板朝前述第1熱 處理板側推壓來接合該重合基板之接合工程；以及其後， 將前述重合基板搬運至前述熱處理單元，於該熱處理單元 -8- 201137959 ’使前述重合基板冷卻至低於前述第2溫度之第3溫度的後 熱處理工程；且，於對重合基板實施前述接合工程之一個 期間’對另一重合基板實施前述前熱處理工程或前述後熱 處理工程。 此外’依據本發明之另一觀點，提供一種程式，以使 接合裝置執行前述接合方法，而於用以控制該接合裝置之 控制部的電腦上執行動作。 依據本發明之另一其他觀點，係提供儲存著前述程式 之可讀取之電腦記憶媒體。 依據本發明’可以有效率地實施具有金屬接合部之基 板彼此的接合’而提高基板接合處理之處理量。 【實施方式】 以下’針對本發明之實施形態進行說明。第1圖，係 具有本實施形態之接合裝置之接合系統1的構成槪略平面 圖。第2圖’係接合系統1之內部構成的槪略側面圖。 於接合系統1 ’如第3圖所示，例如，用以接合做爲2 片基板之晶圓Wu、WL。以下，有時將配置於上側之晶圓 稱爲「上晶圓WU」，將配置於下側之晶圓稱爲「下晶圓 WL」。各晶圓Wu、Wl，分別具有複數金屬接合部JU、JL 。其次，抵接各接合部Ju、吏晶圓Wu、WL重疊而形成 做爲重合基板之重合晶圓WT，來接合晶圓Wu、W^彼此。 此外’本實施形態時，例如，接合部Ju係使用鋁，接合部 Η則使用鍺。 -9 - 201137959 接合系統1之構成上，如第1圖所示，例如，係一體連 結著：於與外部之間，用以搬出入可分別收容複數晶圓 wu、WL、重合晶圓WT之卡匣Cu、Cl、CT的卡匣台2 ;及 具備對晶圓Wu、WL、重合晶圓WT實施特定處理之各種處 理裝置的處理台3。 於卡匣台2，配設有卡匣載置台1〇。於卡匣載置台1〇 ，配設有複數，例如，3個卡匣載置板11。卡匣載置板11 ，係於水平方向之X方向（第1圖中之上下方向）倂排配置 成一列。該等卡匣載置板1 1，於對接合系統1之外部搬出 入卡匣Cu、CL、CT時，可用以載置卡匣Cu、Cl、CT。 於卡匣台2，如第1圖所示，配設有可於X方向延伸之 搬運路20上自由移動之晶圓搬運裝置21。晶圓搬運裝置21 ，亦可以於上下方向及垂直軸周（0方向）自由移動，可 以於與各卡匣載置板11上之卡匣Cu、Cl、CT之間、及於與 後述處理台3之第3區塊G3之移轉裝置之間，搬運晶圓Wu 、WL、重合晶圓WT。 於處理台3,配設有具備各種裝置之複數，例如，3個 區塊Gl、G2、G3。例如，於處理台3之正面側（第1圖之X 方向的負方向側），配設有第1區塊G1，於處理台3之背面 側（第1圖之X方向的正方向側），配設有第2區塊G2。此 外，於處理台3之卡匣台2側（第1圖之Υ方向的負方向側） ，配設有第3區塊G3。 例如，於第1處理區塊G 1，從卡匣台2側依序配置著， 例如，以純水等洗淨液洗淨晶圓Wu、Wl表面之洗淨裝置 -10- 201137959 3〇 ;及進行晶圓Wu、WL之位置調整並重疊’進行該等晶 圓Wu、Wl之暫時接合來形成重合晶圓WT之對準裝置31。 例如，於第2處理區塊G2，配設有用以接合重合晶圓 WT之複數，例如，4個接合裝置40〜43。接合裝置40〜43 ，係於水平方向之Y方向（第1圖中之左右方向）倂排配置 成一列。 例如，於第3處理區塊G3，如第2圖所示，從下依序配 設著4段之晶圓Wu、WL、重合晶圓WT之轉移裝置50、及用 以進行晶圓Wu、WL '重合晶圓WT之熱處理的熱處理裝置 5 1 〜5 3 〇 如第1圖所示，於圍繞於第1區塊G1〜第3區塊G3之區 域，形成有晶圓搬運區域D。於晶圓搬運區域D，例如， 配置著晶圓搬運裝置60。 晶圓搬運裝置60，例如，具有於Y方向、X方向、Θ 方向及上下方向自由移動之搬運臂。晶圓搬運裝置60，可 於晶圓搬運區域D內移動，將晶圓Wu、WL、重合晶圓WT 搬運至周圍之第1區塊G1、第2區塊G2及第3區塊G3內之特 定裝置。 其次，針對上述接合裝置40〜43之構成進行說明。接 合裝置40，如第4圖及第5圖所示’具有接合單元70及熱處 理單元71。接合單元70及熱處理單元71’介由閘閥72’倂 列於水平方向之Y方向（第4圖及第5圖中之左右方向）而 形成一體且氣密之連結。 接合單元70，具有可密閉內部之處理容器80。處理容 -11 - 201137959 器80之構成上，以屏蔽伸縮軟管83連結容器本體81及天花 板82。屏蔽伸縮軟管83之構成上，可於垂直方向自由伸縮 ，藉由該屏蔽伸縮軟管83，天花板82可以於垂直方向自由 移動。 於容器本體8 1之熱處理單元7 1側之側面，形成著重合 晶圓WT之搬出入口 84，於該搬出入口 84，配設有上述閘閥 72 · 於容器本體8 1之側面，形成有吸氣口 8 5。於吸氣口 8 5 ，連結著連通至使處理容器8 0之內部環境減壓成特定真空 度爲止之真空泵86的吸氣管87。此外，本實施形態時’以 吸氣口 85、真空泵86、吸氣管87來構成第1減壓機構。 於處理容器80內部之天花板82，配設有將後述第1熱 處理板1 10上之重合晶圓WT朝第1熱處理板1 10側推壓之加 壓機構90。加壓機構90，具有：抵接並推壓重合晶圓WT之 推壓構件91 ;以環狀裝設於天花板82之支撐構件92 ;以及 連結推壓構件91及支撐構件92，於垂直方向自由伸縮之加 壓伸縮軟管93。於推壓構件9 1之內部，內建有例如因供電 而發熱之加熱器（未圖示）。其次，於加壓機構90之內部 ，亦即，於由推壓構件91、加壓伸縮軟管93、支撐構件92 及天花板82所圍繞之內部空間’例如，以壓縮空氣之供氣 或吸氣，加壓伸縮軟管93進行伸縮而使推壓構件91於垂直 方向自由移動。此外，因爲壓縮空氣被封入加壓機構90之 內部，使加壓機構90之加壓伸縮軟管93的剛性應大於處理 容器8 0之屏蔽伸縮軟管8 3的剛性’用以承受該壓縮空氣所 -12 - 201137959 產生之內壓。 此外，於處理容器80內部之天花板82，配設有用以於 後述第1搬運臂160或第2搬運臂161與第1熱處理板110間移 轉重合晶圓WT之保持臂100。所以，保持臂100，係隨著天 花板82之移動而於垂直方向自由移動。保持臂100，例如 ，於重合晶圓WT之同一圓周上以等間隔配設有4支，以4個 部位保持該重合晶圓WT之外周部。保持臂1 00，如第6圖所 示，係具有：從天花板82朝垂直方向下方延伸且其下端部 彎曲朝水平方向內側延伸之支撐部101 ;及支撐於支撐部 101，用以保持重合晶圓WT之保持部102。保持部102，具 有：朝水平方向內側突出，用以保持重合晶圓WT之外周部 下面的突出構件103;及從該突出構件103朝垂直方向上方 延伸，用以導引重合晶圓WT之外周部側面的導引構件1 04 。此外，導引構件1 04上端之內側面，係從下側朝上側呈 錐狀擴大。 如第5圖所示，於處理容器80內部之加壓機構90的下 方，與該加壓機構90相對之位置，配設有用以載置重合晶 圓WT並進行熱處理之第1熱處理板110。於第1熱處理板110 ，例如，內建因供電而發熱之加熱器（未圖示）。第1熱 處理板1 1 〇之加熱溫度，例如，由後述控制部200所控制。 此外，於第1熱處理板1 1 〇之外周部，如第6圖所示，形成 有從保持臂100將重合晶圓WT移轉至第1熱處理板110之狀 態下用以收容該保持臂100之保持部102的溝槽1 1 1。溝槽 1 1 1，如第4圖所示，例如，係形成於第1熱處理板110之外 -13- 201137959 周部的4個部位。 如第5圖所示，於第1熱處理板1 1 0之下面側’配設有 用以冷卻重合晶圓WT之冷卻板1 20。於冷卻板1 20，例如， 內建有斐爾提裝置（Peltier device)及水冷套等冷卻構件 (未圖示）。冷卻板1 20之冷卻溫度，例如，由後述控制 部200所控制。 熱處理單元71，如第4闘及第5圖所示，具有可密閉內 部之處理容器130。於處理容器130之晶圓搬運區域D側之 側面，形成有重合晶圆WT之搬出入口 131，於該搬出入口 1 3 1，配設有閘閥1 3 2。此外，於處理容器1 3 0之接合單元 70側之側面，形成有重合晶圓WT之搬出入口 133，於該搬 出入口 133，配設有上述閘閥72。 於處理容器130之底面，形成有吸氣口 134。於吸氣口 134，連結著連通至使處理容器130之內部環境減壓至特定 真空度之真空泵135的吸氣管136。此外，本實施形態時， 第2減壓機構係由吸氣口 134、真空泵135、吸氣管136所構 成。 於處理容器130內部之天花板面，配設有進行重合晶 圓WT之熱處理的第2熱處理板140。於第2熱處理板140，例 如，內建有因供電而發熱之加熱器（未圖示）。第2熱處 理板1 4 0之加熱溫度，例如，由後述控制部2 0 0所控制。此 外，於第2熱處理板14〇之下面，形成著複數用以吸引並吸 附保持重合晶圓WT之吸引口 141。 於處理容器130內部之底面，於與第2熱處理板140相 -14- 201137959 對之位置，配設有對重合晶圓WT進行熱處理之第3熱處理 板1 5 0。於第3熱處理板1 5 0 ’例如，內建著因供電而發熱 之加熱器（未圖示）。此外’於第3熱處理板150，形成有 在從後述第2搬運臂161將重合晶圓wT移轉至第3熱處理板 】5〇之狀態下，用以收容該第2搬運臂161之臂部174的溝槽 151。溝槽151’係於Y方向（第4圖及第5圖之左右方向） 延伸，例如，形成於2個部位。 於第3熱處理板1 5 0之下面側，配設有用以冷卻重合晶 圓WT之冷卻板152。於冷卻板152，例如，內建有斐爾提裝 置及水冷套等冷卻構件（未圖示）。冷卻板152之冷卻溫 度，例如，由後述控制部2 0 0所控制。 於第2熱處理板1 4 0與第3熱處理板1 5 0之間，例如，2 支搬運臂160、161配置於垂直方向。以下，有時將配置於 上側之搬運臂稱爲「第1搬運臂1 60」，而將配置於下側之 搬運臂稱爲「第2搬運臂161」。此外，搬運臂之數量並未 限制爲2支，例如，亦可以爲1支。 第1搬運臂160，具有：用以保持重合晶圓WT之背面， 於Y方向延伸之2支臂部170、170 ;及支撐該臂部170、170 之支撐部1 7 1。臂部1 70，係配置在形成於重合晶圓WT背面 ’亦即，形成於下晶圓WL背面之溝（未圖示）而可保持該 重合晶圓WT。於支撐部171之基端部，裝設有設於處理容 器130之天花板面，而可於沿著γ方向延伸之軌道172上自 由移動之驅動部173。藉由該驅動部173，第1搬運臂160, 可以在熱處理單元71與接合單元之間，於水平方向自由移 -15- 201137959 動，而且，可以在第2熱處理板140與第3熱處理板150之間 ，於垂直方向自由移動。此外，臂部1 70，亦可具有吸附 保持重合晶圓WT之背面的吸附墊。 第2搬運臂161，也具有與第1搬運臂160相同之構成。 亦即，第2搬運臂161，具有保持重合晶圓WT之背面，於Y 方向延伸之2支臂部174、174 ;及用以支撐該臂部174、 174之支撐部175。臂部174，配置在形成於重合晶圓WT背 面之溝（未圖示）而用以保持該重合晶圓WT。於支撐部 175之基端部，裝設著可在配設於處理容器130底面之沿著 Y方向延伸之軌道176上自由移動的驅動部177。藉由該驅 動部177，第2搬運臂161，可於熱處理單元71與接合單元 間之水平方向自由移動，而且，可於第2熱處理板140與第 3熱處理板150間之垂直方向自由移動。此外，臂部174, 亦可具有用以吸附保持重合晶圓WT背面之吸附墊。 此外，接合裝置41〜43之構成’因爲與上述接合裝置 40之構成相同，故省略其說明。 於以上之接合系統1，如第1圖所示，配設有控制部 200。控制部200，例如，係電腦，具有程式儲存部（未圖 示）。於程式儲存部，儲存著用以控制接合裝置40〜之 重合晶圓WT之處理的程式。此外，於程式儲存部’亦儲存 著用以控制上述各種處理裝置及搬運裝置等之驅動系之動 作而實現接合系統1之後述接合處理之程式。此外’前述 程式，係記錄於例如電腦可讀取之硬碟（HD )、軟碟（ FD )、光碟（CD )、磁光碟（MO )、記億卡等電腦可讀 -16- 201137959 取之記憶媒體Η者，亦可以從該記憶媒體Η安裝至控制部 200 者。 其次’針對使用以上構成之接合系統1來實施重合晶 圓WT之接合處理方法進行說明。第7圖，係以相關晶圓接 合處理之主要工程爲例的流程圖。 首先’將收容著複數片上晶圓Wu之卡匣Cu、收容著 下晶圓WL之卡匣CL、及空的卡匣cT，載置於卡匣台2之特 定卡匣載置板11。其後，由晶圓搬運裝置21，取出卡匣Cu 內之上晶圓Wu，並搬運至處理台3之第3區塊G3之例如轉 移裝置50。 其次’上晶圓Wu，由晶圓搬運裝置60搬運至第1區塊 G1之洗淨裝置30 ’以洗淨液進行上晶圓Wu表面之洗淨（ 第7圖之工程S 1 )。其後’上晶圓WlJ，由晶圓搬運裝置60 搬運至對準裝置31。 繼上晶圓Wu之後，由晶圓搬運裝置21取出卡匣 之下晶圓wL’並搬運至轉移裝置5〇。其次，下晶圓Wl， 由晶圓搬運裝置60搬運至洗淨裝置3〇，以洗淨液進行下晶 圓wL表面之洗淨（第7圖之工程32)。其後，下晶圓 由晶圓搬運裝置60搬運至對準裝置3 i。 上晶圓Wu及下晶圓Wl被搬運至對準裝置31，對該等 晶圓Wu、WL進行位置調整並進行重疊。此外，於晶圓Wu 、W L之一方或雙方’於重疊前，例如，預先塗佈接著劑， 於重疊時進行接著來實施暫時接合，而形成重合晶圓WT( 第7圖之工程S 3 )。 -17- 201137959 其後，重合晶圓WT，由晶圓搬運裝置60搬運至第2區 塊G2之接合裝置4〇。第8圖，係接合裝置40之重合晶圓WT 之溫度（第8圖中之"Temp")、重合晶圓WT荷重（第8圖 中之"Force")、及各單元70、71內之環境壓力（第8圖中 之”VAC")的時效變化。 於接合裝置40’首先，打開熱處理單元71之閘閥132 ，由晶圓搬運裝置60將重合晶圓wT搬入至第2熱處理板140 下方。接著，如第9圖所示，將重合晶圓wT從晶圓搬運裝 置60移轉至第1搬運臂160後，使第1搬運臂160上昇，而使 重合晶圓WT抵接第2熱處理板140之下面。其次，從第2熱 處理板140之吸引口 141吸引重合晶圓wT，而以第2熱處理 板14〇之下面來吸附保持重合晶圓WT。其後，關閉閘閥132 ，以真空泵135進行處理容器80內部之環境減壓。其後， 由第2熱處理板1 4 0，將重合晶圓WT加熱至第1溫度例如3 5 0 °C爲止（第7圖之工程S4)。此時，爲了對重合晶圓WT之 接合部Ju、J l進行均一加熱，而以例如1 0〜5 (TC /分之加熱 速度的特定加熱速度來進行加熱。此外，當處理容器80之 內部減壓成接合單元70內之壓力時，停止從吸引口 141之 重合晶圓WT之吸引。此時，藉由第1搬運臂160，使重合晶 圓WT維持抵接於第2熱處理板140之下面。 重合晶圓WT被加熱至第1溫度時，打開閘閥72。接著 ，以驅動部173使第1搬運臂160下降後，使該第1搬運臂 160移動至接合單元70，將重合晶圓WT搬運至第1熱處理板 110之上方。此時，保持臂1〇〇，於第1搬運臂160之下方進 -18- 201137959 行待機。 其後，如第10圖所示，使保持臂100上昇、或使第1搬 運臂160下降’而從第1搬運臂160將重合晶圓WT移轉至保 持臂100之保持部102。此時，因爲保持部102之導引構件 1 〇4上端之內側面係從下側朝上側呈錐狀擴大，例如，即 使第1搬運臂160上之重合晶圓WT被以偏離導引構件1〇4之 內側面的方式配置，重合晶圓WT亦可順利地爲導引構件 104所保持。其後，使第1搬運臂160移動至熱處理單元71 ，關閉閘閥72。 其後，如第1 1圖所示，使保持臂100下降，將重合晶 圓WT載置於第1熱處理板110。此時，保持臂1〇〇之保持部 102，被收容於第1熱處理板110之溝槽111 ^ 其後，由第1熱處理板1 1 0將重合晶圓WT加熱至例如 4 3 0 T：之第2溫度。重合晶圓WT，例如，被以1 0〜5 0 °C /分 之加熱速度進行加熱。此外，處理容器8 0內部之環境，例 如，維持於O.lPa之真空度的特定真空度。 其後，一邊使重合晶圓WT之溫度維持於第2溫度，一 邊如第12圖所示，對加壓機構90供應壓縮空氣，使推壓構 件9 1下降。其次，使推壓構件9 1抵接於重合晶圓WT，並將 該重合晶圓WT以例如5 OkN之特定荷重朝第1熱處理板1 1 0 側推壓。其次，對重合晶圓WT例如，進行1 0分鐘之特定時 間的推壓，來接合重合晶圓WT (第7圖之工程S5)。此外 ，重合晶圓WT之溫度，例如，亦可利用推壓構件9 1內之加 熱器或冷卻板120而維持於第2溫度。 -19- 201137959 其後，以第1熱處理板1 1 0將重合晶圓wT冷卻至例如 3 50 °C。重合晶回WT，爲了防止接合部、JL之強度及物 性的改變，例如，以10〜50 °C /分之冷卻速度的特定冷卻 速度來進行冷卻。此外，重合晶圓WT之冷卻，例如，亦可 利用推壓構件9 1內之加熱器或冷卻板1 20。 將重合晶圓WT冷卻至350°C時，使保持臂1〇〇上昇，從 第1熱處理板110將重合晶圓WT移轉至保持臂100。接著， 打開閘閥74。其次，由驅動部177使第2搬運臂161移動至 保持臂100下方之第1熱處理板110的上方。 其後，如第13圖所示，使保持臂100下降、或使第2搬 運臂161上昇，從保持臂100將重合晶圆WT移轉至第2搬運 臂161。其後，使第2搬運臂161朝熱處理單元71移動，關 閉閘閥72。 其後，如第14圖所示，使第2搬運臂161下降，將重合 晶圓WT載置於第3熱處理板150上。此時，第2搬運臂161之 臂部174，被收容於第3熱處理板150之溝槽151。其次，由 第3熱處理板150，將重合晶關WT冷卻至例如200°C之第3溫 度（第7圖之工程S6 )»此時，亦可以冷卻板152來進行重 合晶圓WT之冷卻。 其後，使第2搬運臂161上昇，從第3熱處理板150將重 合晶圓WT移轉至第2搬運臂161。此外，使熱處理單元71內 之壓力開放成大氣壓後，接著，打開閘閥1 32，從第2搬運 臂161移轉至晶圓搬運裝置60，再從接合裝置40搬出重合 晶圓Wt0 -20- 201137959 其後，重合晶圓WT，由晶圓搬運裝置60搬運至第3區 塊G3之熱處理裝置51，並進行特定溫度之溫度調節（第7 圖之工程S7 )。其後，重合晶圓WT，由晶圓搬運裝置60搬 運至轉移裝置50，其後，由卡匣台2之晶圓搬運裝置21搬 運至特定卡匣載置板11之卡匣CT。如此，結束一連串之重 合晶圓WT的接合處理。 此外，於接合裝置40之接合單元70，對一個重合晶圓 以丁執行工程S5之接合處理的期間，於熱處理單元71，對另 —重合晶圓WT執行工程S4之前熱處理或工程S6之後熱處 理。此時，首先，於接合單元70，對重合晶圓WT1執行工 程S5之接合處理的期間，於熱處理單元7 1，對重合晶圓 \^丁2執行工程S4之前熱處理。其後，以第2搬運臂161，將 已執行工程S5之接合處理的重合晶圓WT1，從接合單元70 搬運至熱處理單元7 1後，以第1搬運臂1 60，將已執行工程 S4之前熱處理的重合晶圓WT2，從熱處理單元71搬運至接 合單元70。其次，於對重合晶圓WT2執行工程S5之接合處 理的期間，對重合晶圓WT1執行工程S6之後熱處理。此外 5於對重合晶圓 W T2 執行工程S5之接合處理的期間，將已 執行工程S6之後熱處理的重合晶圓…^搬出熱處理單元71 ’而且’將下一重合晶圓WT3搬入熱處理單元71，對該重 合晶圓WT3執行工程S 4之前熱處理。如此，於一個接合裝 置40，倂行地對2個重合晶圓WT進行處理。 依據以上實施之接合裝置1，於接合單元70與熱處理 單元71，可以依序進行重合晶圓WT之處理。亦即，首先， -21 - 201137959 於熱處理單元7 1所執行之工程S 4時，將重合晶圓WT吸附保 持於第2熱處理板140之下面並加熱至第1溫度。其後，於 接合單元70所執行之工程S5時，將重合晶圓WT載置於第1 熱處理板110’並一邊使該重合晶圓WT維持於特定溫度之 第2溫度，一邊以加壓機構90將重合晶圓WT朝第1熱處理板 1 1 0側推壓來接合該重合晶圆WT。其後，於熱處理單元7 1 所執行之工程S6時，將重合晶圓WT載置於第3熱處理板170 並進行冷卻。其次，於接合單元70處理一個重合晶圓WT期 間，於熱處理單元7 1，可倂行處理另一重合晶圓WT。此外 ，結束熱處理單元71之工程S 6後，將該熱處理單元71內之 壓力開放成大氣壓，並打開閘閥1 3 2，搬出重合晶圓WT， 接著，打開閘閥132之狀態下，搬入重合晶圓WT開始工程 S4，而進一步提高處理量。如此，依據本實施形態，即使 第2溫度爲高溫，因爲可同時有效地對2個重合晶圓WT進行 處理，故可提高晶圆接合處理之處理量。 此外，因爲於加壓機構90之推壓構件91之內部，內建 有加熱器，於接合單元70，配設有冷卻板120，於接合單 元7〇所執行之工程S5時，可以進行重合晶圓WT之溫度微調 整，而確實使該重合晶圓WT之溫度維持於第2溫度。此外 ，也可迅速地進行重合晶圓WT之加熱或冷卻。 此外，因爲於熱處理單元71配設有冷卻板152，於熱 處理單元71所執行之工程S6時，可以進行重合晶圓WT之溫 度微調整，而使重合晶圓WT之冷卻速度維持於特定冷卻速 度。所以，可以防止重合晶圓WT之接合部J u、】L之強度及 -22- 201137959 物性的改變。 此外，因爲於熱處理單元71配設有第2熱處理板140及 第3熱處理板150，於一個熱處理單元71’可以共同進行工 程S4之重合晶圓WT之前熱處理及工程S6之重合晶圓WT之 後熱處理。所以，因爲工程S4及工程S6無需以不同單元來 執行，可以縮小接合裝置40〜43之覆蓋面積。此外，可以 實現接合裝置40〜43之構成簡化、以及接合裝置40〜43之 製造成本的低廉化。 此外，熱處理單元71，因爲具有2支搬運臂160、161 ，故可有效率地於接合單元7 0與熱處理單元71之間進行重 合晶圓WT之搬運。藉此，可以進一步提高晶圓接合處理之 處理量。 此外，加壓機構90配設於處理容器80之天花板82，天 花板82與加壓機構90—體地於垂直方向自由移動。所以， 如上面所述，加壓機構90之加壓伸縮軟管93之剛性要大於 處理容器80之屏蔽伸縮軟管83之剛性。依據本實施形態， 因爲可以在天花板82下降之情形下，使加壓機構90之推壓 構件9 1下降，即使加壓伸縮軟管93之剛性較大，亦可以特 定荷重確實推壓重合晶圓WT。 以上之實施形態的接合裝置40〜43時，第1搬運臂160 之軌道172及第2搬運臂161之軌道176，係分別配設於熱處 理單元71之處理容器130的天花板面及底面，然而，如第 15圖及第16圖所示，軌道172、176，亦可一起配設於處理 容器130之底面。此時，軌道172係配置於軌道176之外側 -23- 201137959 。此外，支撐部171、175 ’係分別從驅動部173、177於垂 直方向延伸，其上端部則彎曲成於水平方向延伸。藉由此 構成，支撐部171、175，可以在不互相干涉下於水平方向 及垂直方向移動。 以上之贲施形態的接合裝置40〜43時，亦可以於第2 熱處理板140與第3熱處理板150之間配設遮蔽板。藉由該 遮蔽板，於以第2熱處理板140對重合晶圓行工程S4之 前熱處理時，不會受到來自第3熱處理板150之熱的影響。 此外，以第3熱處理板150對重合晶PWT執行工程S6之後熱 處理時，也不會受到來自第2熱處理板140之熱的影響。 以上之實施形態的接合系統1時，如第1 7圖所示，亦 可以於第1處理區塊G1進一步配設檢査裝置210。檢査裝置 210，可以檢査接合裝置40〜43所接合之重合晶圓WT是否 適度接合。此時，於檢查裝置2 1 0，判斷重合晶圓WT未適 度接合時，例如，可以補正接合裝置40〜43之處理條件。 此外，以上之實施形態的接合系統1時，如第1 7圖所 示，亦可以於第3區塊G3之X方向正方向側的旁邊，配設 晶圓搬運裝置220。晶0搬運裝置220，例如，具有於X方 向、0方向及上下方向自由移動之搬運臂。晶圓搬運裝置 220，可以在支撐晶圓Wu、WL、重合晶圓Wt之狀態上下移 動，而將晶圓Wu、WL、重合晶圓WT搬運至第3處理區塊 G3內之轉移裝置50'熱處理裝置51〜53。此時，因爲第3 處理區塊G3內之晶圓Wu、WL、重合晶圓wT之搬運無需使 用晶回搬運裝置60,故可進~步提高晶圓接合處理之處理 -24- 201137959 量。 此外’以上之實施形態時’於接合系統1配設有4個接 合裝置40〜43，然而，接合裝置之數量可以任意變更。 此外’以上之實施形態時，於洗淨裝置30，係以洗淨 液來洗淨晶圓Wu、WL之表面，亦即，爲濕洗淨，然而， 亦可以爲乾洗淨。乾洗淨時，例如，亦可以於洗淨裝置3 〇 內激發電漿，以該電漿來進行晶圓Wu、WL表面之洗淨。 此外，以上之實施形態時，接合部、JL係分別使用 鋁及鍺，然而，使用其他金屬時，亦可適用本發明。此時 ，對應接合部】U、Jl所使用金屬之種類，來決定接合單元 70之處理條件，例如，決定重合晶圓WT之加熱溫度及推壓 荷重等。此外，以上之實施形態時，係於晶圓Wu、配 設有金屬接合部Ju、〗L，然而，基板本身爲金屬時，亦可 適用本發明。此外，基板爲晶圓以外之FPD (平板顯示器 )、光罩用之罩板等其他基板時，亦適用本發明。 以上，係參照附錄圖式，針對本發明之良好實施形態 進行說明，然而，本發明並未受限於該等實例。相關業者 ，於申請專利範圍所記載之思想範疇內，當可想到各種變 更例或修正例，該等實施當然也包含於本發明之技術範圍 內。 本發明，可應用於具有金屬接合部之基板的彼此接合 【圖式簡單說明】 -25- 201137959 第1圖係具備本ϊϊ施形態之接合裝置之接合系統的構 成槪略平面圖。 第2圖係本實施形態之接合系統之內部構成的槪略側 面圖。 第3圖係重合晶回之剖面圖。 第4圖係接合裝置之構成的槪略橫剖面圖。 第5圖係接合裝置之構成的槪略縱剖面圖。 第6圖係保持臂之保持部收容於第2熱處理板，重合晶 圓載置於第2熱處理板時之說明圖。 第7圖係晶圆接合處理之主工程的流程圖。 第8圖係接合裝置之重合晶圓之溫度、施加於重合晶 園之荷重、及各單元內環境之壓力的時效變化圖。 第9圖係第2熱處理板吸附保持重合晶圓時之說明圖。 第10圖係將重合晶圓從第1搬運臂移轉至保持臂時之 說明圖。 第11圖係從保持臂將重合晶圓載置於第1熱處理板時 之說明圖。 第12圖係推壓第1熱處理板上之重合晶圓並進行接合 時之說明圖。 第13圖係從保持臂將重合晶圓移轉至第2搬運臂時之 說明圖。 第14圖係從第2搬運臂將重合晶圓載置於第3熱處理板 時之說明圖。 第1 5圖係其他實施形態之熱處理單元之構成的槪略橫 -26- 201137959 剖面圖。 第1 6圖係其他實施形態之熱處理單元之構成的槪略縱 剖面圖。 第1 7圖係其他實施形態之接合系統之構成槪略平面圖 【主要元件符號說明】 1 :接合系統 2 :卡匣台 3 :處理台 3 〇 :洗淨裝置 31 :對準裝置 40〜43 :接合裝置 50 :轉移裝置 5 1〜53 :熱處理裝置 70 :接合單元 71 :熱處理單元 8 0 :處理容器 81 :容器本體 8 2 :天花板 8 3 =屏蔽伸縮軟管 8 5 :吸氣口 8 6 :真空泵 8 7 :供氣管 -27- 201137959 9 0 :加壓機構 9 1 :推壓構件 92 :支撐構件 93 :加壓伸縮軟管 1〇〇 :保持臂 1 1 〇 :第1熱處理板 1 2 0 :冷卻板 130 :處理容器 134 :吸氣口 135 :真空泵 1 3 6 :吸氣管 140 :第2熱處理板 1 5 0 :第3熱處理板 1 5 2 :冷卻板 160 :第1搬運臂 161 :第2搬運臂 170 :臂部 1 7 1 :支撐部 172 :軌道 1 7 3 :驅動部 174 :臂部 175 :支撐部 176 :軌道 1 7 7 :驅動部 -28 201137959 2 0 0 :控制部 J υ、:接合部 Wu :上晶圓 W l :下晶圓 WT :重合晶圓 -29BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus, a bonding method, and a computer memory medium for bonding substrates having metal bonding portions. [Prior Art] In recent years, the high integration of semiconductor devices has continued to progress. When a plurality of high-integration semiconductor devices are placed in a horizontal plane and the semiconductor devices are connected by wiring, the wiring length must be increased, and the resistance of the wiring is increased, and the wiring delay is increased. . Therefore, a proposal has been made to utilize a three-dimensional element technique using a three-dimensionally laminated semiconductor device. In the case of the three-dimensional integrated technology, for example, two semiconductor wafers (hereinafter referred to as "wafers") are bonded by a bonding apparatus. The bonding apparatus has, for example, a fixed stage on which a wafer is placed, and a movable table that is disposed to face the fixed stage and that is capable of adsorbing and holding the wafer from below. A heater is built in the fixed table and the movable table. Next, in the case of the bonding apparatus, after the two wafers are stacked, the wafer is heated by the heater, and the wafer is pressed by the fixed stage and the movable stage to press the wafer, and the wafers are bonded together ( Patent Document 1). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-207436. However, when joining two wafers, it is necessary to bond the metal joint portions formed on the wafer surface. At this time, it is necessary to press the joint while heating at a specific temperature of -5 to 201137959. That is, the first execution is: before the wafer is heated to a specific temperature, the heat treatment is performed to maintain the temperature of the wafer at a specific temperature, and the bonding process is pushed; and thereafter, the post-heating of the cooling of the wafer is performed. At this time, if the bonding apparatus of Patent Document 1 is used, it takes a lot of time to bond two wafers. First, it takes some time to heat the wafer to a specific temperature because of the aforementioned specific temperature during the pre-heat treatment process. Moreover, the rapid heating of the crystal 0 may fail to obtain uniform heating of the joint portions to cool the wafer at a specific heating rate or lower. In addition, the specific temperature is high temperature, and it takes some time for the cooling to be high in the post-heat treatment process. Further, when the joint portions are alloyed with each other, since the strength of the joint portion may be changed by rapidly cooling the wafer, it is necessary to perform the time required for the joint work outside the wafer at a specific cooling rate or lower. It was decided by the Ministry and so on, so it could not be shortened. As described above, since the wafers having the metal bonding portions have a large time each other, the amount of processing of the wafer bonding process is caused. In view of the above, the object of the present invention is to effectively bond the substrates of the metal bonding portions to each other. The bonding and increase the throughput of the substrate. In order to achieve the above object, the present invention is a bonding apparatus for bonding substrates of an I-bonded portion, and is characterized in that: I: a coincident substrate that is in contact with the bonding portion and overlaps the substrate, and must be followed by The processing of the wafer. , it needs to be high temperature, because it is hot, so it must be because the wafer of the front temperature is bonded or physically cooled. The bonding of the materials used should be reduced. The ground is equipped with a metal connection. Spare heat treatment -6 - 201137959 The first heat treatment plate, the superposed substrate on the first heat treatment plate is facing the first! a pressurizing mechanism for pressing the heat treatment plate side and a joining unit of the first pressure reducing mechanism for depressurizing the internal environment to a specific degree of vacuum; and a heat treatment for superposing the substrate before the processing by the joining unit a heat treatment plate, a third heat treatment plate for heat-treating the superposed substrate treated by the bonding unit, and a second pressure reduction mechanism for depressurizing the internal environment to a specific degree of vacuum; and the bonding unit and the heat treatment described above Units are connected in a gastight manner. According to the bonding apparatus of the present invention, in the bonding unit and the heat treatment unit, the processing of the superposed substrates can be sequentially performed. That is, first, in the heat treatment unit, the superposed substrate is heated by the second heat treatment plate. Thereafter, the superposed substrate is transported to the bonding unit, and the superposed substrate is placed on the superposed substrate while the first heat treatment plate is placed on the superposed substrate in a specific vacuum degree. The first heat treatment plate side is pressed to join the superposed substrate. Thereafter, the superposed substrate is transferred to a heat treatment unit where the superposed substrate is cooled by the third heat treatment plate. Next, during the processing of the bonding unit to overlap the substrate, another superposed substrate may be processed in the thermal processing unit. As described above, according to the present invention, even if the specific temperature is high, the two superposed substrates can be efficiently processed at the same time, so that the amount of substrate bonding processing can be improved. In the second heat treatment plate, the second heat treatment plate is disposed above the third heat treatment plate, and the second heat treatment plate is placed on the second heat treatment plate to adsorb and hold the superposed substrate and heat treatment. 201137959 The board is used to mount the aforementioned superposed substrate and perform heat treatment. The heat treatment unit may further include: transporting the superposed substrate in a horizontal direction between the heat treatment unit and the bonding unit, and transporting the overlap in a vertical direction between the second heat treatment plate and the third heat treatment plate The carrying arm of the substrate. The transfer arm may be disposed in two in the vertical direction. The pressurizing mechanism may include: a pressing member that abuts the superposed substrate on the first heat treatment plate and heat-treating, and presses the pressing member of the superposed substrate; and the bonding unit may further include: cooling the first heat treatment A cooling plate that overlaps the substrate. The heat treatment unit may further include a cooling plate for cooling the superposed substrate on the third heat treatment plate. The pressing mechanism may be disposed on a ceiling of the joining unit, and the ceiling may be freely movable in a vertical direction. According to another aspect of the present invention, a bonding method for bonding substrates having metal bonding portions, characterized in that the heat treatment unit heats a superposed substrate that is in contact with the bonding portion and overlaps the substrate to a first temperature Before the heat treatment process: thereafter, the superposed substrate is transported to the bonding unit, and the superposed substrate is placed on the first heat treatment plate in a specific vacuum degree environment, and the superposed substrate is maintained at a higher level than the foregoing a second temperature of the first temperature, and the bonding substrate is pressed toward the first heat treatment plate side to join the bonding substrate; and thereafter, the superposed substrate is transferred to the heat treatment unit, and the heat treatment unit is 8-201137959 'A post-heat treatment process for cooling the superposed substrate to a third temperature lower than the second temperature; and performing the foregoing pre-heat treatment process on another superposed substrate during one of the bonding processes performed on the superposed substrate The aforementioned post-heat treatment project. Further, according to another aspect of the present invention, there is provided a program for causing an engaging device to perform the aforementioned joining method and performing an action on a computer for controlling a control portion of the engaging device. According to still another aspect of the present invention, a readable computer memory medium storing the aforementioned program is provided. According to the present invention, the bonding of the substrates having the metal joints can be efficiently performed to increase the amount of processing of the substrate bonding process. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a schematic plan view showing a configuration of a joining system 1 having a joining device of the present embodiment. Fig. 2 is a schematic side view showing the internal structure of the joint system 1. As shown in Fig. 3, the bonding system 1' is for example bonded to wafers Wu, WL which are two substrates. Hereinafter, the wafer disposed on the upper side will be referred to as "upper wafer WU", and the wafer disposed on the lower side may be referred to as "lower wafer WL". Each of the wafers Wu and W1 has a plurality of metal joints JU and JL. Then, the wafers Wu and W^ are bonded to each other by abutting the bonding portions Ju and the germanium wafers Wu and WL to form a superposed wafer WT as a superposed substrate. Further, in the present embodiment, for example, aluminum is used for the joint portion Ju, and 锗 is used for the joint portion. -9 - 201137959 The structure of the joint system 1 is, as shown in Fig. 1, for example, integrally connected to the outside, for carrying in and out of the plurality of wafers wu, WL, and the coincident wafer WT. The cassettes 2 of the cassettes Cu, Cl, and CT; and the processing stage 3 including various processing means for performing specific processing on the wafers Wu, WL, and the superposed wafer WT. On the card platform 2, there is a cassette mounting table 1〇. The cassette mounting table 1 is provided with a plurality of, for example, three cassette mounting plates 11. The cassette mounting plates 11 are arranged in a row in the X direction (upward and downward direction in Fig. 1) in the horizontal direction. When the cassette mounting plates 1 1 carry out the cassettes Cu, CL, and CT outside the bonding system 1, they can be used to mount the cassettes Cu, Cl, and CT. As shown in Fig. 1, the cassette holder 2 is provided with a wafer transfer device 21 that is freely movable on the transport path 20 extending in the X direction. The wafer transfer device 21 can be freely moved in the vertical direction and the vertical axis (0 direction), and can be interposed between the cassettes Cu, C1, and CT on each of the cassette mounting plates 11, and a processing table to be described later. The wafers Wu, WL, and the coincident wafer WT are transferred between the transfer devices of the third block G3 of 3. The processing station 3 is provided with a plurality of devices, for example, three blocks G1, G2, and G3. For example, on the front side of the processing table 3 (the negative side in the X direction of the first drawing), the first block G1 is disposed on the back side of the processing table 3 (the positive side in the X direction of the first drawing) With the second block G2. Further, on the side of the cassette 2 of the processing table 3 (the negative side in the direction of the first figure), the third block G3 is disposed. For example, the first processing block G 1 is disposed in order from the side of the cassette 2, for example, a cleaning device for cleaning the surface of the wafers Wu and W1 with a cleaning solution such as pure water -10-201137959 3; And adjusting the position of the wafers Wu and WL and superimposing the temporary alignment of the wafers Wu and W1 to form the alignment device 31 of the superposed wafer WT. For example, in the second processing block G2, a plurality of bonding wafers WT, for example, four bonding devices 40 to 43, are disposed. The joining devices 40 to 43 are arranged in a line in the Y direction (the horizontal direction in the first drawing) in the horizontal direction. For example, in the third processing block G3, as shown in FIG. 2, the four-stage wafers Wu, WL, the transfer device 50 of the coincident wafer WT, and the wafer Wu are arranged in order from the bottom. Heat treatment apparatus 5 1 to 5 3 for heat treatment of WL 'superposed wafer WT As shown in Fig. 1, a wafer conveyance region D is formed in a region surrounding the first block G1 to the third block G3. In the wafer transfer area D, for example, the wafer transfer device 60 is disposed. The wafer transfer device 60 has, for example, a transfer arm that is freely movable in the Y direction, the X direction, the 方向 direction, and the vertical direction. The wafer transfer device 60 is movable in the wafer transfer region D, and transports the wafers Wu, WL, and the superposed wafer WT to the surrounding first block G1, the second block G2, and the third block G3. Specific device. Next, the configuration of the above-described joining devices 40 to 43 will be described. The joining device 40 has a joining unit 70 and a heat treatment unit 71 as shown in Figs. 4 and 5. The joining unit 70 and the heat treatment unit 71' are integrally and airtightly connected by the gate valve 72' in the Y direction in the horizontal direction (the left and right directions in Figs. 4 and 5). The joining unit 70 has a processing container 80 that can be sealed inside. Processing Capacity -11 - 201137959 The configuration of the device 80 connects the container body 81 and the ceiling plate 82 with a shielded flexible hose 83. The shielded flexible hose 83 is configured to be freely expandable and contractible in the vertical direction, and the ceiling 82 can be freely moved in the vertical direction by the shielded flexible hose 83. A loading port 84 of the superposed wafer WT is formed on a side surface of the heat treatment unit 171 of the container body 81, and the gate valve 72 is disposed at the loading port 84. The side surface of the container body 8 1 is formed with suction. Port 8 5. At the intake port 8 5 , an intake pipe 87 that communicates with the vacuum pump 86 that decompresses the internal environment of the processing container 80 to a specific degree of vacuum is connected. Further, in the present embodiment, the first pressure reducing mechanism is constituted by the intake port 85, the vacuum pump 86, and the intake pipe 87. The ceiling 82 inside the processing container 80 is provided with a pressing mechanism 90 for pressing the superposed wafer WT on the first heat processing plate 110 to be pressed toward the first heat treatment plate 110 side. The pressurizing mechanism 90 has a pressing member 91 that abuts and presses the superposed wafer WT, a supporting member 92 that is annularly mounted on the ceiling 82, and a connecting pressing member 91 and a supporting member 92 that are freely oriented in the vertical direction. Telescopic pressure flexible hose 93. Inside the pressing member 91, a heater (not shown) that generates heat due to power supply is built in, for example. Next, inside the pressurizing mechanism 90, that is, in the internal space surrounded by the pressing member 91, the pressurized telescopic hose 93, the support member 92, and the ceiling 82, for example, air or air is supplied by compressed air. The pressurizing bellows 93 expands and contracts to freely move the pressing member 91 in the vertical direction. Further, since the compressed air is sealed inside the pressurizing mechanism 90, the rigidity of the pressurizing flexible hose 93 of the pressurizing mechanism 90 should be greater than the rigidity of the shielded flexible hose 83 of the processing container 80 to withstand the compressed air. -12 - 201137959 The internal pressure generated. Further, a ceiling arm 82 inside the processing container 80 is provided with a holding arm 100 for transferring the superposed wafer WT between the first transfer arm 160 or the second transfer arm 161 and the first heat treatment plate 110 which will be described later. Therefore, the holding arm 100 is freely movable in the vertical direction as the ceiling plate 82 moves. The holding arm 100 is provided, for example, at equal intervals on the same circumference of the coincident wafer WT, and the outer peripheral portion of the superposed wafer WT is held at four places. The holding arm 100, as shown in Fig. 6, has a support portion 101 extending downward from the ceiling 82 in the vertical direction and having a lower end portion bent to extend inward in the horizontal direction; and supporting the support portion 101 for maintaining the coincidence crystal The holding portion 102 of the circle WT. The holding portion 102 has a protruding member 103 that protrudes inward in the horizontal direction to hold the lower surface of the outer peripheral portion of the wafer WT, and a vertical direction extending from the protruding member 103 to guide the periphery of the wafer WT. Guide member 1 04 on the side of the section. Further, the inner side surface of the upper end of the guiding member 104 is tapered upward from the lower side toward the upper side. As shown in Fig. 5, a first heat treatment plate 110 for placing a superposed wafer WT and heat-treating is disposed below the pressurizing mechanism 90 inside the processing container 80 at a position facing the pressurizing mechanism 90. In the first heat treatment plate 110, for example, a heater (not shown) that generates heat due to power supply is built in. The heating temperature of the first heat treatment plate 1 1 is controlled by, for example, a control unit 200 which will be described later. Further, as shown in FIG. 6, the outer peripheral portion of the first heat treatment plate 1 1 is formed to accommodate the holding arm 100 in a state in which the superposed wafer WT is transferred from the holding arm 100 to the first heat treatment plate 110. The groove 1 1 1 of the holding portion 102. As shown in Fig. 4, the groove 1 1 1 is formed, for example, at four locations on the periphery of the first heat treatment plate 110 -13-201137959. As shown in Fig. 5, a cooling plate 126 for cooling the superposed wafer WT is disposed on the lower side of the first heat treatment plate 110. For the cooling plate 120, for example, a cooling member (not shown) such as a Peltier device and a water jacket is built in. The cooling temperature of the cooling plate 110 is controlled by, for example, the control unit 200 which will be described later. The heat treatment unit 71 has a processing container 130 that can seal the inside as shown in Figs. 4 and 5. A carry-in port 131 of the superposed wafer WT is formed on the side of the wafer transfer area D side of the processing container 130, and a gate valve 133 is disposed at the carry-out port 133. Further, on the side of the bonding unit 70 side of the processing container 130, a carry-in/out port 133 of the superposed wafer WT is formed, and the gate valve 72 is disposed in the carry-out port 133. On the bottom surface of the processing container 130, an intake port 134 is formed. The intake port 134 is connected to an intake pipe 136 that communicates with a vacuum pump 135 that depressurizes the internal environment of the processing container 130 to a specific degree of vacuum. Further, in the present embodiment, the second pressure reducing mechanism is constituted by the intake port 134, the vacuum pump 135, and the intake pipe 136. A second heat treatment plate 140 for heat treatment of the coincident wafer WT is disposed on the ceiling surface inside the processing container 130. In the second heat treatment plate 140, for example, a heater (not shown) that generates heat due to power supply is built in. The heating temperature of the second heat treatment plate 140 is controlled by, for example, a control unit 2000 described later. Further, under the second heat treatment plate 14 is formed a plurality of suction ports 141 for attracting and adsorbing and holding the overlap wafer WT. On the bottom surface of the inside of the processing container 130, a third heat treatment plate 150 for heat-treating the superposed wafer WT is disposed at a position opposite to the second heat treatment plate 140-14-201137959. For example, a heater (not shown) that generates heat due to power supply is built in the third heat treatment plate 150'. In the third heat treatment plate 150, the arm portion of the second transfer arm 161 is accommodated in a state in which the second transfer arm w is transferred from the second transfer arm 161 to the third heat treatment plate. The groove 151 of 174. The groove 151' extends in the Y direction (the left and right directions in Figs. 4 and 5), and is formed, for example, at two locations. On the lower side of the third heat treatment plate 150, a cooling plate 152 for cooling the superposed wafer WT is disposed. For the cooling plate 152, for example, a cooling member (not shown) such as a Philite device and a water jacket is built in. The cooling temperature of the cooling plate 152 is controlled by, for example, a control unit 2000 described later. Between the second heat treatment plate 140 and the third heat treatment plate 150, for example, the two transfer arms 160 and 161 are disposed in the vertical direction. Hereinafter, the transport arm disposed on the upper side may be referred to as "first transport arm 1 60", and the transport arm disposed on the lower side may be referred to as "second transport arm 161". Further, the number of the carrying arms is not limited to two, and for example, it may be one. The first transfer arm 160 has two arm portions 170 and 170 for holding the back surface of the superposed wafer WT and extending in the Y direction, and a support portion 177 for supporting the arm portions 170 and 170. The arm portion 170 is disposed on the back surface of the superposed wafer WT, that is, a groove (not shown) formed on the back surface of the lower wafer WL to hold the superposed wafer WT. At the base end portion of the support portion 171, a drive portion 173 which is provided on the ceiling surface of the processing container 130 and freely movable on the rail 172 extending in the γ direction is mounted. By the driving unit 173, the first transfer arm 160 can be moved between the heat treatment unit 71 and the joining unit by -15-201137959 in the horizontal direction, and the second heat treatment plate 140 and the third heat treatment plate 150 can be moved. Between the free movement in the vertical direction. Further, the arm portion 170 may have an adsorption pad that adsorbs and holds the back surface of the coincident wafer WT. The second transport arm 161 also has the same configuration as the first transport arm 160. In other words, the second transfer arm 161 has two arm portions 174 and 174 extending in the Y direction and a support portion 175 for supporting the arm portions 174 and 174 on the back surface of the overlap wafer WT. The arm portion 174 is disposed in a groove (not shown) formed on the back surface of the superposed wafer WT to hold the superposed wafer WT. A drive portion 177 that is freely movable on a rail 176 extending in the Y direction disposed on the bottom surface of the processing container 130 is attached to the base end portion of the support portion 175. By the driving portion 177, the second transfer arm 161 is freely movable in the horizontal direction between the heat treatment unit 71 and the joining unit, and is freely movable in the vertical direction between the second heat treatment plate 140 and the third heat treatment plate 150. In addition, the arm portion 174 may also have an adsorption pad for adsorbing and holding the back surface of the coincident wafer WT. The configuration of the joining devices 41 to 43 is the same as that of the above-described joining device 40, and the description thereof will be omitted. In the above joint system 1, as shown in Fig. 1, a control unit 200 is disposed. The control unit 200, for example, a computer has a program storage unit (not shown). A program for controlling the processing of the coincident wafer WT of the bonding device 40 to is stored in the program storage unit. Further, the program storage unit ’ stores a program for controlling the engagement processing of the bonding system 1 to control the operation of the above-described various processing devices and the driving system. In addition, the above-mentioned programs are recorded on, for example, a computer-readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a computer such as a billion card, etc. - 16-201137959 The memory media can also be installed from the memory medium to the control unit 200. Next, a description will be given of a bonding processing method for performing the coincidence wafer WT using the bonding system 1 having the above configuration. Figure 7 is a flow chart taking the main project of the related wafer bonding process as an example. First, a cassette 匣Cu containing a plurality of wafers Wa, a cassette CL containing the lower wafer WL, and an empty cassette cT are placed on a specific cassette mounting plate 11 of the cassette 2. Thereafter, the wafer transfer device 21 takes out the wafer Wu in the cassette Cu and transports it to the third block G3 of the processing station 3, for example, the transfer device 50. Next, the upper wafer Wu is transported by the wafer transfer device 60 to the cleaning device 30' of the first block G1, and the surface of the upper wafer Wu is washed with the cleaning liquid (the work S1 of Fig. 7). Thereafter, the upper wafer W1J is transported by the wafer transfer device 60 to the alignment device 31. After the upper wafer Wu, the wafer lower wafer wL' is taken out by the wafer transfer device 21 and transported to the transfer device 5A. Next, the lower wafer W1 is transported by the wafer transfer device 60 to the cleaning device 3, and the surface of the lower wafer wL is washed with the cleaning liquid (the work 32 of Fig. 7). Thereafter, the lower wafer is transported by the wafer transfer device 60 to the alignment device 3i. The upper wafer Wu and the lower wafer W1 are transported to the alignment device 31, and the wafers Wu and WL are positionally adjusted and superimposed. Further, before or after the overlap of one or both of the wafers Wu and WL, for example, an adhesive is applied in advance, and when the overlap is performed, the temporary bonding is performed to form the coincident wafer WT (the project S 3 of FIG. 7 ) . -17- 201137959 Thereafter, the wafer WT is superposed and transported by the wafer transfer device 60 to the bonding device 4 of the second block G2. Figure 8, the temperature of the coincident wafer WT of the bonding device 40 ("Temp" in Fig. 8), the coincident wafer WT load ("Force" in Fig. 8), and units 70, 71 The aging change of the internal environmental pressure ("VAC" in Fig. 8). First, the bonding device 40' opens the gate valve 132 of the heat treatment unit 71, and the wafer transfer device 60 carries the coincident wafer wT to the second heat treatment plate. 140. Next, as shown in FIG. 9, after the superposed wafer wT is transferred from the wafer transfer device 60 to the first transfer arm 160, the first transfer arm 160 is raised, and the superposed wafer WT is abutted. 2, the lower surface of the heat treatment plate 140. Next, the superposed wafer wT is sucked from the suction port 141 of the second heat treatment plate 140, and the superposed wafer WT is adsorbed and held by the lower surface of the second heat treatment plate 14b. Thereafter, the gate valve 132 is closed. The environment inside the processing container 80 is depressurized by the vacuum pump 135. Thereafter, the superposed wafer WT is heated to the first temperature, for example, 3500 ° C by the second heat treatment plate 1404 (the engineering S4 of Fig. 7) At this time, in order to uniformly heat the joint portions Ju, J l of the coincident wafer WT, for example, 1 0 to 5 (heating is performed at a specific heating rate of the heating rate of TC / min. Further, when the inside of the processing container 80 is decompressed to the pressure in the joining unit 70, the suction of the superposed wafer WT from the suction port 141 is stopped. At this time, the superposed wafer WT is maintained in contact with the lower surface of the second heat treatment plate 140 by the first transfer arm 160. When the superposed wafer WT is heated to the first temperature, the gate valve 72 is opened. Next, the drive unit 173 is driven. After the first transfer arm 160 is lowered, the first transfer arm 160 is moved to the joining unit 70, and the superposed wafer WT is transported to the upper side of the first heat treatment plate 110. At this time, the arm 1 is held and the first conveyance is performed. The lower side of the arm 160 enters the line -18-201137959. After that, as shown in Fig. 10, the holding arm 100 is raised or the first transfer arm 160 is lowered, and the superposed wafer WT is moved from the first transfer arm 160. Turning to the holding portion 102 of the holding arm 100. At this time, since the inner side surface of the upper end of the guiding member 1 〇4 of the holding portion 102 is tapered upward from the lower side, for example, even if the first conveying arm 160 is overlapped The wafer WT is disposed away from the inner side surface of the guiding member 1〇4, and the crystal is overlapped. The WT can also be smoothly held by the guide member 104. Thereafter, the first transfer arm 160 is moved to the heat treatment unit 71, and the gate valve 72 is closed. Thereafter, as shown in Fig. 1, the holding arm 100 is lowered. The superposed wafer WT is placed on the first heat treatment plate 110. At this time, the holding portion 102 of the holding arm 1 is accommodated in the groove 111 of the first heat treatment plate 110. Thereafter, the first heat treatment plate 1 1 0 The coincident wafer WT is heated to a second temperature of, for example, 4 3 0 T:. The coincident wafer WT is heated, for example, at a heating rate of 10 to 50 ° C /min. In addition, the environment inside the container 80 is processed, for example, maintained at O. The specific vacuum of the vacuum of lPa. Thereafter, while maintaining the temperature of the superposed wafer WT at the second temperature, as shown in Fig. 12, compressed air is supplied to the pressurizing mechanism 90 to lower the pressing member 91. Next, the pressing member 91 is brought into contact with the superposed wafer WT, and the superposed wafer WT is pressed toward the first heat treatment plate 1 1 0 side by a specific load of, for example, 5 OkN. Next, the coincident wafer WT is pressed for a specific time of 10 minutes, for example, to bond the coincident wafer WT (item S5 of Fig. 7). Further, the temperature of the superposed wafer WT can be maintained at the second temperature by, for example, the heater or the cooling plate 120 in the pressing member 91. -19- 201137959 Thereafter, the superposed wafer wT is cooled to, for example, 3 50 °C by the first heat treatment plate 110. In order to prevent the change in the strength and physical properties of the joint portion and the JL, for example, the crystal is cooled at a specific cooling rate of a cooling rate of 10 to 50 ° C /min. Further, the cooling of the wafer WT can be superimposed, for example, by using the heater or the cooling plate 110 in the pressing member 91. When the superposed wafer WT is cooled to 350 °C, the holding arm 1 is raised, and the superposed wafer WT is transferred from the first heat treatment plate 110 to the holding arm 100. Next, the gate valve 74 is opened. Next, the drive unit 177 moves the second transfer arm 161 above the first heat treatment plate 110 below the holding arm 100. Thereafter, as shown in Fig. 13, the holding arm 100 is lowered or the second transfer arm 161 is raised, and the superposed wafer WT is transferred from the holding arm 100 to the second transfer arm 161. Thereafter, the second transfer arm 161 is moved toward the heat treatment unit 71, and the gate valve 72 is closed. Thereafter, as shown in Fig. 14, the second transfer arm 161 is lowered, and the superposed wafer WT is placed on the third heat treatment plate 150. At this time, the arm portion 174 of the second transfer arm 161 is housed in the groove 151 of the third heat treatment plate 150. Next, the third heat treatment plate 150 cools the coincident crystal WT to a third temperature of, for example, 200 ° C (the work S6 of Fig. 7). At this time, the plate 152 may be cooled to cool the overlap wafer WT. Thereafter, the second transfer arm 161 is raised, and the superposed wafer WT is transferred from the third heat treatment plate 150 to the second transfer arm 161. Further, after the pressure in the heat treatment unit 71 is opened to the atmospheric pressure, the gate valve 1 32 is opened, the second transfer arm 161 is transferred to the wafer transfer device 60, and the coincident wafer is unloaded from the bonding device 40. Wt0-20-201137959 Thereafter, the wafer WT is superimposed and transported by the wafer transfer device 60 to the heat treatment device 51 of the third block G3, and temperature adjustment at a specific temperature is performed (the process S7 of Fig. 7). Thereafter, the wafer WT is superposed, transported by the wafer transfer device 60 to the transfer device 50, and then transported by the wafer transfer device 21 of the cassette 2 to the cassette CT of the specific cassette mounting plate 11. Thus, the joining process of a series of coincident wafer WTs is ended. Further, during the bonding unit 70 of the bonding apparatus 40, during the bonding process of performing the process S5 on one of the coincident wafers, the heat treatment unit 71 performs the heat treatment before the process S4 or the heat treatment after the process S6 on the other wafer WT. At this time, first, in the bonding unit 70, the bonding process of the process S5 is performed on the coincident wafer WT1, and the heat treatment unit 711 performs the heat treatment before the process S4 on the coincident wafers. Thereafter, the second transfer arm 161 transports the superposed wafer WT1 that has been subjected to the bonding process of the process S5 from the bonding unit 70 to the heat treatment unit 71, and then the first transfer arm 1 60 before the execution of the process S4 The heat-treated superposed wafer WT2 is transported from the heat treatment unit 71 to the joining unit 70. Next, during the bonding process of the process S5 to the coincident wafer WT2, the heat treatment after the process S6 is performed on the coincident wafer WT1. In addition, during the bonding process of performing the process S5 on the coincident wafer W T2 , the superposed wafers which have been subjected to the heat treatment after the process S6 are moved out of the heat treatment unit 71 ' and the next wafer WT 3 is carried into the heat treatment unit 71, The heat treatment before the engineering S 4 is performed on the coincident wafer WT3. Thus, the two superposed wafers WT are processed in a splicing manner in one bonding device 40. According to the bonding apparatus 1 implemented above, in the bonding unit 70 and the heat treatment unit 71, the processing of the wafer WT can be sequentially performed. That is, first, -21 - 201137959, when the heat treatment unit 71 performs the process S 4 , the superposed wafer WT is adsorbed and held under the second heat treatment plate 140 and heated to the first temperature. Thereafter, at the time S5 executed by the bonding unit 70, the superposed wafer WT is placed on the first heat treatment plate 110' and the superposed wafer WT is maintained at the second temperature of the specific temperature while the pressing mechanism is used. The superposed wafer WT is pressed against the first heat treatment plate 1 1 0 side to join the superposed wafer WT. Thereafter, at the time S6 executed by the heat treatment unit 71, the superposed wafer WT is placed on the third heat treatment plate 170 and cooled. Next, during the processing of a coincident wafer WT by the bonding unit 70, another processing wafer WT can be processed in the thermal processing unit 171. Further, after the process S6 of the heat treatment unit 71 is completed, the pressure in the heat treatment unit 71 is opened to atmospheric pressure, the gate valve 132 is opened, the superposed wafer WT is carried out, and then, the gate wafer 132 is opened, and the coincident wafer is carried. WT started engineering S4 and further increased the throughput. As described above, according to the present embodiment, even if the second temperature is high, since the two superposed wafers WT can be efficiently processed at the same time, the amount of processing for the wafer bonding process can be increased. In addition, since the heater is built in the inside of the pressing member 91 of the pressurizing mechanism 90, the cooling plate 120 is disposed in the joining unit 70, and the recombination crystal can be performed in the process S5 performed by the joining unit 7〇. The temperature of the circle WT is finely adjusted, and the temperature of the coincident wafer WT is surely maintained at the second temperature. In addition, heating or cooling of the coincident wafer WT can also be performed quickly. In addition, since the heat treatment unit 71 is provided with the cooling plate 152, during the process S6 performed by the heat treatment unit 71, the temperature adjustment of the coincident wafer WT can be performed, and the cooling rate of the coincident wafer WT is maintained at a specific cooling rate. . Therefore, it is possible to prevent the change in the strength of the joints Ju, L of the wafer WT and the physical properties of -22-201137959. In addition, since the heat treatment unit 71 is provided with the second heat treatment plate 140 and the third heat treatment plate 150, the heat treatment unit 71' can collectively perform the heat treatment of the wafer S before the process S4 and the heat treatment of the workpiece S6. . Therefore, since the project S4 and the project S6 need not be executed in different units, the coverage area of the bonding devices 40 to 43 can be reduced. Further, the configuration of the bonding devices 40 to 43 can be simplified, and the manufacturing cost of the bonding devices 40 to 43 can be reduced. Further, since the heat treatment unit 71 has the two transfer arms 160 and 161, the transfer of the wafer WT can be efficiently performed between the bonding unit 70 and the heat treatment unit 71. Thereby, the throughput of the wafer bonding process can be further improved. Further, the pressurizing mechanism 90 is disposed on the ceiling 82 of the processing container 80, and the ceiling plate 82 and the pressurizing mechanism 90 are freely movable in the vertical direction. Therefore, as described above, the rigidity of the pressurized bellows 93 of the pressurizing mechanism 90 is greater than the rigidity of the shielded bellows 83 of the processing container 80. According to the present embodiment, since the pressing member 9 1 of the pressurizing mechanism 90 can be lowered when the ceiling 82 is lowered, even if the rigidity of the pressurized telescopic hose 93 is large, the specific load can be surely pressed against the coincident wafer. WT. In the joining devices 40 to 43 of the above embodiment, the rails 172 of the first transport arm 160 and the rails 176 of the second transport arm 161 are disposed on the ceiling surface and the bottom surface of the processing container 130 of the heat treatment unit 71, respectively. As shown in FIGS. 15 and 16, the rails 172 and 176 may be disposed together on the bottom surface of the processing container 130. At this time, the track 172 is disposed on the outer side of the track 176 - 201137959. Further, the support portions 171, 175' extend in the vertical direction from the drive portions 173, 177, respectively, and the upper end portion thereof is curved to extend in the horizontal direction. With this configuration, the support portions 171 and 175 can be moved in the horizontal direction and the vertical direction without interfering with each other. In the case of the bonding devices 40 to 43 of the above-described embodiment, a shielding plate may be disposed between the second heat treatment plate 140 and the third heat treatment plate 150. By the shield plate, heat treatment from the third heat treatment plate 150 is not affected by the heat treatment before the wafer bonding process S4 by the second heat treatment plate 140. Further, when the heat treatment is performed after the process S6 is performed on the superposed crystal PWT by the third heat treatment plate 150, the heat from the second heat treatment plate 140 is not affected. In the joint system 1 of the above embodiment, as shown in Fig. 17, the inspection device 210 may be further disposed in the first processing block G1. The inspection device 210 can check whether or not the coincident wafer WT to which the bonding devices 40 to 43 are bonded is properly joined. At this time, when the inspection device 2100 determines that the coincident wafer WT is not properly joined, for example, the processing conditions of the bonding devices 40 to 43 can be corrected. Further, in the joint system 1 of the above embodiment, as shown in Fig. 17, the wafer transfer device 220 may be disposed beside the positive side of the X-direction of the third block G3. The crystal transfer device 220 has, for example, a transfer arm that is freely movable in the X direction, the 0 direction, and the vertical direction. The wafer transfer device 220 can move the wafers Wu, WL, and the superposed wafer WT to the transfer device 50' in the third processing block G3 by moving the wafers Wa, WL, and the coincident wafer Wt. Heat treatment devices 51 to 53. At this time, since the wafers Wu, WL, and the wafer wT in the third processing block G3 do not need to be transported by the wafer transfer device 60, the wafer bonding process can be further improved to -24-201137959. Further, in the above embodiment, four joining devices 40 to 43 are disposed in the joining system 1, but the number of joining devices can be arbitrarily changed. Further, in the above embodiment, in the cleaning device 30, the surfaces of the wafers Wu and WL are washed with a cleaning liquid, that is, wet cleaned, but may be dry cleaned. When the dry cleaning is performed, for example, the plasma may be excited in the cleaning device 3 ,, and the surface of the wafers Wu and WL may be washed with the plasma. Further, in the above embodiment, aluminum and tantalum are used for the joint portion and the JL system. However, the present invention can also be applied when other metals are used. At this time, the processing conditions of the bonding unit 70 are determined in accordance with the type of metal used in the joint portions U and J1, and for example, the heating temperature and the pressing load of the superposed wafer WT are determined. Further, in the above embodiment, the metal bonding portions Ju and L are disposed on the wafer Wu. However, the present invention can also be applied to the case where the substrate itself is a metal. Further, the present invention is also applicable to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a cover sheet for a photomask. The above is a description of the preferred embodiments of the present invention with reference to the appended drawings. However, the invention is not limited by the examples. Various changes or modifications are conceivable within the scope of the invention as set forth in the appended claims, and such embodiments are of course included in the technical scope of the present invention. The present invention can be applied to the joining of substrates having a metal joint portion. [Brief Description of the Drawings] -25- 201137959 Fig. 1 is a schematic plan view showing a configuration of a joining system of the joining device of the present embodiment. Fig. 2 is a schematic side view showing the internal structure of the joining system of the embodiment. Figure 3 is a cross-sectional view of the coincidence crystal. Fig. 4 is a schematic cross-sectional view showing the configuration of the joining device. Fig. 5 is a schematic longitudinal sectional view showing the configuration of the joining device. Fig. 6 is an explanatory view showing a state in which the holding portion of the holding arm is housed in the second heat treatment plate and the superposed crystal is placed on the second heat treatment plate. Figure 7 is a flow chart of the main project of the wafer bonding process. Fig. 8 is a graph showing the time-dependent change of the temperature of the coincident wafer of the bonding apparatus, the load applied to the coincidence crystal, and the pressure of the environment inside each unit. Fig. 9 is an explanatory view showing a state in which the second heat treatment plate adsorbs and holds the wafer. Fig. 10 is an explanatory view showing a case where the superposed wafer is transferred from the first transfer arm to the holding arm. Fig. 11 is an explanatory view showing a state in which the superposed wafer is placed on the first heat treatment plate from the holding arm. Fig. 12 is an explanatory view showing a state in which the superposed wafer on the first heat treatment plate is pressed and joined. Fig. 13 is an explanatory view of the case where the holding arm transfers the superposed wafer to the second transfer arm. Fig. 14 is an explanatory view showing a case where the superposed wafer is placed on the third heat treatment plate from the second transfer arm. Fig. 15 is a cross-sectional view showing the constitution of the heat treatment unit of the other embodiment -26-201137959. Fig. 16 is a schematic longitudinal sectional view showing the constitution of a heat treatment unit of another embodiment. Fig. 17 is a schematic plan view of a joint system of another embodiment [Description of main components] 1 : Bonding system 2: cassette table 3: processing station 3 〇: cleaning device 31: aligning devices 40 to 43: Engagement device 50: Transfer device 5 1 to 53 : Heat treatment device 70 : Bonding unit 71 : Heat treatment unit 80 : Processing container 81 : Container body 8 2 : Ceiling 8 3 = Shielded flexible hose 8 5 : Suction port 8 6 : Vacuum pump 8 7 : Air supply pipe -27- 201137959 9 0 : Pressurizing mechanism 9 1 : Pushing member 92 : Support member 93 : Pressurized telescopic hose 1 〇〇: Holding arm 1 1 〇: 1st heat treatment plate 1 2 0 : Cooling plate 130 : Processing container 134 : Suction port 135 : Vacuum pump 1 3 6 : Suction pipe 140 : Second heat treatment plate 1 5 0 : Third heat treatment plate 1 5 2 : Cooling plate 160 : First transfer arm 161 : Second transport arm 170: arm portion 1 7 1 : support portion 172 : rail 1 7 3 : drive unit 174 : arm portion 175 : support portion 176 : rail 1 7 7 : drive unit -28 201137959 2 0 0 : control unit J υ,: joint part Wu: upper wafer W l : lower wafer WT: coincident wafer -29