JP5878632B2 - 電界発光有機トランジスタ - Google Patents

電界発光有機トランジスタ Download PDF

Info

Publication number
JP5878632B2
JP5878632B2 JP2014522202A JP2014522202A JP5878632B2 JP 5878632 B2 JP5878632 B2 JP 5878632B2 JP 2014522202 A JP2014522202 A JP 2014522202A JP 2014522202 A JP2014522202 A JP 2014522202A JP 5878632 B2 JP5878632 B2 JP 5878632B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
organic transistor
type
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014522202A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014526122A (ja
JP2014526122A5 (enExample
Inventor
ラファエッラ・カペッリ
ミケレ・ムッチーニ
Original Assignee
エ・ティ・チ・エッセ・エッレ・エッレ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エ・ティ・チ・エッセ・エッレ・エッレ filed Critical エ・ティ・チ・エッセ・エッレ・エッレ
Publication of JP2014526122A publication Critical patent/JP2014526122A/ja
Publication of JP2014526122A5 publication Critical patent/JP2014526122A5/ja
Application granted granted Critical
Publication of JP5878632B2 publication Critical patent/JP5878632B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
JP2014522202A 2011-07-29 2012-07-26 電界発光有機トランジスタ Expired - Fee Related JP5878632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente
ITMI2011A001447 2011-07-29
PCT/IB2012/053815 WO2013018000A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor

Publications (3)

Publication Number Publication Date
JP2014526122A JP2014526122A (ja) 2014-10-02
JP2014526122A5 JP2014526122A5 (enExample) 2015-08-06
JP5878632B2 true JP5878632B2 (ja) 2016-03-08

Family

ID=44584356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014522202A Expired - Fee Related JP5878632B2 (ja) 2011-07-29 2012-07-26 電界発光有機トランジスタ

Country Status (7)

Country Link
US (1) US8772765B2 (enExample)
EP (1) EP2583329B1 (enExample)
JP (1) JP5878632B2 (enExample)
KR (1) KR101595341B1 (enExample)
CN (1) CN103718326B (enExample)
IT (1) ITMI20111447A1 (enExample)
WO (1) WO2013018000A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
JP2003100457A (ja) 2001-09-21 2003-04-04 Seiko Epson Corp 発光装置
JP4334907B2 (ja) * 2002-05-21 2009-09-30 株式会社半導体エネルギー研究所 有機電界効果トランジスタ
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
WO2005064614A1 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
JP4530334B2 (ja) 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
US7494722B2 (en) * 2005-02-23 2009-02-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector
US7799439B2 (en) * 2006-01-25 2010-09-21 Global Oled Technology Llc Fluorocarbon electrode modification layer
US8026512B2 (en) 2006-11-16 2011-09-27 Panasonic Corporation Mobility engineered electroluminescent devices
EP2132213B1 (en) * 2007-03-07 2013-05-15 University of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
WO2009099205A1 (ja) 2008-02-08 2009-08-13 National University Corporation Kyoto Institute Of Technology 発光デバイスの駆動方法及び駆動装置
JP2009218529A (ja) * 2008-03-13 2009-09-24 Kyocera Corp 発光素子及びその製造方法
US8513654B2 (en) * 2008-04-10 2013-08-20 Idemitsu Kosan Co. Ltd. Compound for organic thin-film transistor and organic thin-film transistor using the compound
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5447794B2 (ja) 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

Also Published As

Publication number Publication date
KR20140065404A (ko) 2014-05-29
US8772765B2 (en) 2014-07-08
EP2583329B1 (en) 2014-04-09
JP2014526122A (ja) 2014-10-02
EP2583329A1 (en) 2013-04-24
US20130175518A1 (en) 2013-07-11
CN103718326B (zh) 2016-04-27
WO2013018000A1 (en) 2013-02-07
CN103718326A (zh) 2014-04-09
ITMI20111447A1 (it) 2013-01-30
KR101595341B1 (ko) 2016-02-18

Similar Documents

Publication Publication Date Title
JP5878632B2 (ja) 電界発光有機トランジスタ
US8729540B2 (en) Electroluminescent organic transistor
Muccini et al. Organic light-emitting transistors: towards the next generation display technology
JP6025874B2 (ja) 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ
KR101820786B1 (ko) 일렉트로루미네선트 유기 이중 게이트 트랜지스터
US7973320B2 (en) Organic semiconductor light-emitting device and display using same
Chen et al. Recent Advances in Multi‐Layer Light‐Emitting Heterostructure Transistors
US8368055B2 (en) Display device including organic light-emitting transistor and a fluorecent pattern and method of fabricating the display device
CN103956433A (zh) 一种单极型有机发光场效应晶体管
CN103325815B (zh) 有机发光器件和制造有机发光器件的方法
TW201900847A (zh) 有機電致發光器件
EP2545599A1 (en) Organic light emitting field effect transistor
US9343707B2 (en) Electroluminescent organic double gate transistor
Kumar et al. A simulation study for enhancing the performance of luminescent organic transistor using reduced voltage and hole blocking layer
KR101146193B1 (ko) 유기반도체소자 및 그 제조방법
Kajii et al. Influence of Polymer Gate Dielectrics on p-Channel and n-Channel Formation of Fluorene-type Polymer Light-emitting Transistors

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150617

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150617

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20150617

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20150721

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151026

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160128

R150 Certificate of patent or registration of utility model

Ref document number: 5878632

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees