JP5878632B2 - 電界発光有機トランジスタ - Google Patents

電界発光有機トランジスタ Download PDF

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JP5878632B2
JP5878632B2 JP2014522202A JP2014522202A JP5878632B2 JP 5878632 B2 JP5878632 B2 JP 5878632B2 JP 2014522202 A JP2014522202 A JP 2014522202A JP 2014522202 A JP2014522202 A JP 2014522202A JP 5878632 B2 JP5878632 B2 JP 5878632B2
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Japan
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semiconductor
organic transistor
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semiconductor material
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Japanese (ja)
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JP2014526122A5 (enExample
JP2014526122A (ja
Inventor
ラファエッラ・カペッリ
ミケレ・ムッチーニ
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エ・ティ・チ・エッセ・エッレ・エッレ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
JP2014522202A 2011-07-29 2012-07-26 電界発光有機トランジスタ Expired - Fee Related JP5878632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2011A001447 2011-07-29
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente
PCT/IB2012/053815 WO2013018000A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor

Publications (3)

Publication Number Publication Date
JP2014526122A JP2014526122A (ja) 2014-10-02
JP2014526122A5 JP2014526122A5 (enExample) 2015-08-06
JP5878632B2 true JP5878632B2 (ja) 2016-03-08

Family

ID=44584356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014522202A Expired - Fee Related JP5878632B2 (ja) 2011-07-29 2012-07-26 電界発光有機トランジスタ

Country Status (7)

Country Link
US (1) US8772765B2 (enExample)
EP (1) EP2583329B1 (enExample)
JP (1) JP5878632B2 (enExample)
KR (1) KR101595341B1 (enExample)
CN (1) CN103718326B (enExample)
IT (1) ITMI20111447A1 (enExample)
WO (1) WO2013018000A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6742983B2 (ja) 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
JP2003100457A (ja) 2001-09-21 2003-04-04 Seiko Epson Corp 発光装置
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
JP4334907B2 (ja) * 2002-05-21 2009-09-30 株式会社半導体エネルギー研究所 有機電界効果トランジスタ
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
US7829884B2 (en) 2003-12-22 2010-11-09 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
JP4530334B2 (ja) 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
US7494722B2 (en) * 2005-02-23 2009-02-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector
US7799439B2 (en) * 2006-01-25 2010-09-21 Global Oled Technology Llc Fluorocarbon electrode modification layer
US8026512B2 (en) 2006-11-16 2011-09-27 Panasonic Corporation Mobility engineered electroluminescent devices
JP5562652B2 (ja) * 2007-03-07 2014-07-30 ユニバーシティ オブ ケンタッキー リサーチ ファウンデーション シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置
JP5403518B2 (ja) 2008-02-08 2014-01-29 国立大学法人京都工芸繊維大学 発光デバイスの駆動方法及び駆動装置
JP2009218529A (ja) * 2008-03-13 2009-09-24 Kyocera Corp 発光素子及びその製造方法
JP5452475B2 (ja) * 2008-04-10 2014-03-26 出光興産株式会社 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5447794B2 (ja) 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

Also Published As

Publication number Publication date
KR101595341B1 (ko) 2016-02-18
ITMI20111447A1 (it) 2013-01-30
WO2013018000A1 (en) 2013-02-07
US20130175518A1 (en) 2013-07-11
US8772765B2 (en) 2014-07-08
CN103718326B (zh) 2016-04-27
CN103718326A (zh) 2014-04-09
EP2583329A1 (en) 2013-04-24
EP2583329B1 (en) 2014-04-09
KR20140065404A (ko) 2014-05-29
JP2014526122A (ja) 2014-10-02

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