ITMI20111447A1 - Transistor organico elettroluminescente - Google Patents

Transistor organico elettroluminescente Download PDF

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Publication number
ITMI20111447A1
ITMI20111447A1 IT001447A ITMI20111447A ITMI20111447A1 IT MI20111447 A1 ITMI20111447 A1 IT MI20111447A1 IT 001447 A IT001447 A IT 001447A IT MI20111447 A ITMI20111447 A IT MI20111447A IT MI20111447 A1 ITMI20111447 A1 IT MI20111447A1
Authority
IT
Italy
Prior art keywords
layer
semiconductor
type
semiconductor structure
semiconductor material
Prior art date
Application number
IT001447A
Other languages
English (en)
Italian (it)
Inventor
Raffaella Capelli
Michele Muccini
Original Assignee
E T C Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Srl filed Critical E T C Srl
Priority to IT001447A priority Critical patent/ITMI20111447A1/it
Priority to PCT/IB2012/053815 priority patent/WO2013018000A1/en
Priority to EP12759235.0A priority patent/EP2583329B1/en
Priority to JP2014522202A priority patent/JP5878632B2/ja
Priority to US13/810,441 priority patent/US8772765B2/en
Priority to CN201280038018.XA priority patent/CN103718326B/zh
Priority to KR1020147005653A priority patent/KR101595341B1/ko
Publication of ITMI20111447A1 publication Critical patent/ITMI20111447A1/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
IT001447A 2011-07-29 2011-07-29 Transistor organico elettroluminescente ITMI20111447A1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente
PCT/IB2012/053815 WO2013018000A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor
EP12759235.0A EP2583329B1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor
JP2014522202A JP5878632B2 (ja) 2011-07-29 2012-07-26 電界発光有機トランジスタ
US13/810,441 US8772765B2 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor
CN201280038018.XA CN103718326B (zh) 2011-07-29 2012-07-26 电致发光有机晶体管
KR1020147005653A KR101595341B1 (ko) 2011-07-29 2012-07-26 전기발광 유기 트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente

Publications (1)

Publication Number Publication Date
ITMI20111447A1 true ITMI20111447A1 (it) 2013-01-30

Family

ID=44584356

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente

Country Status (7)

Country Link
US (1) US8772765B2 (enExample)
EP (1) EP2583329B1 (enExample)
JP (1) JP5878632B2 (enExample)
KR (1) KR101595341B1 (enExample)
CN (1) CN103718326B (enExample)
IT (1) ITMI20111447A1 (enExample)
WO (1) WO2013018000A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1367659A2 (en) * 2002-05-21 2003-12-03 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
US20060188745A1 (en) * 2005-02-23 2006-08-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100457A (ja) 2001-09-21 2003-04-04 Seiko Epson Corp 発光装置
JP4334907B2 (ja) * 2002-05-21 2009-09-30 株式会社半導体エネルギー研究所 有機電界効果トランジスタ
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
WO2005064614A1 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
JP4530334B2 (ja) 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
US7799439B2 (en) * 2006-01-25 2010-09-21 Global Oled Technology Llc Fluorocarbon electrode modification layer
US8026512B2 (en) 2006-11-16 2011-09-27 Panasonic Corporation Mobility engineered electroluminescent devices
EP2132213B1 (en) * 2007-03-07 2013-05-15 University of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
WO2009099205A1 (ja) 2008-02-08 2009-08-13 National University Corporation Kyoto Institute Of Technology 発光デバイスの駆動方法及び駆動装置
JP2009218529A (ja) * 2008-03-13 2009-09-24 Kyocera Corp 発光素子及びその製造方法
US8513654B2 (en) * 2008-04-10 2013-08-20 Idemitsu Kosan Co. Ltd. Compound for organic thin-film transistor and organic thin-film transistor using the compound
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5447794B2 (ja) 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
EP1367659A2 (en) * 2002-05-21 2003-12-03 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
US20060188745A1 (en) * 2005-02-23 2006-08-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WEI B ET AL: "Integrating organic light-emitting diode and field-effect-transistor in a single device", ORGANIC ELECTRONICS, ELSEVIER, AMSTERDAM, NL, vol. 9, no. 3, 1 June 2008 (2008-06-01), pages 323 - 327, XP025473955, ISSN: 1566-1199, [retrieved on 20071214], DOI: 10.1016/J.ORGEL.2007.11.010 *

Also Published As

Publication number Publication date
KR20140065404A (ko) 2014-05-29
US8772765B2 (en) 2014-07-08
EP2583329B1 (en) 2014-04-09
JP5878632B2 (ja) 2016-03-08
JP2014526122A (ja) 2014-10-02
EP2583329A1 (en) 2013-04-24
US20130175518A1 (en) 2013-07-11
CN103718326B (zh) 2016-04-27
WO2013018000A1 (en) 2013-02-07
CN103718326A (zh) 2014-04-09
KR101595341B1 (ko) 2016-02-18

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