CN103718326B - 电致发光有机晶体管 - Google Patents

电致发光有机晶体管 Download PDF

Info

Publication number
CN103718326B
CN103718326B CN201280038018.XA CN201280038018A CN103718326B CN 103718326 B CN103718326 B CN 103718326B CN 201280038018 A CN201280038018 A CN 201280038018A CN 103718326 B CN103718326 B CN 103718326B
Authority
CN
China
Prior art keywords
layer
type
semiconductor material
semiconductor
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280038018.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103718326A (zh
Inventor
R·卡佩尔利
M·姆西尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etc i L LLC
POLYERA CORP
Original Assignee
ETC SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ETC SRL filed Critical ETC SRL
Publication of CN103718326A publication Critical patent/CN103718326A/zh
Application granted granted Critical
Publication of CN103718326B publication Critical patent/CN103718326B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
CN201280038018.XA 2011-07-29 2012-07-26 电致发光有机晶体管 Expired - Fee Related CN103718326B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente
ITMI2011A001447 2011-07-29
PCT/IB2012/053815 WO2013018000A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor

Publications (2)

Publication Number Publication Date
CN103718326A CN103718326A (zh) 2014-04-09
CN103718326B true CN103718326B (zh) 2016-04-27

Family

ID=44584356

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280038018.XA Expired - Fee Related CN103718326B (zh) 2011-07-29 2012-07-26 电致发光有机晶体管

Country Status (7)

Country Link
US (1) US8772765B2 (enExample)
EP (1) EP2583329B1 (enExample)
JP (1) JP5878632B2 (enExample)
KR (1) KR101595341B1 (enExample)
CN (1) CN103718326B (enExample)
IT (1) ITMI20111447A1 (enExample)
WO (1) WO2013018000A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459877A (zh) * 2002-05-21 2003-12-03 株式会社半导体能源研究所 有机场效应晶体管
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
CN1652350A (zh) * 2003-11-25 2005-08-10 三星Sdi株式会社 薄膜晶体管及其制造方法
US20060188745A1 (en) * 2005-02-23 2006-08-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100457A (ja) 2001-09-21 2003-04-04 Seiko Epson Corp 発光装置
JP4334907B2 (ja) * 2002-05-21 2009-09-30 株式会社半導体エネルギー研究所 有機電界効果トランジスタ
WO2005064614A1 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
JP4530334B2 (ja) 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
US7799439B2 (en) * 2006-01-25 2010-09-21 Global Oled Technology Llc Fluorocarbon electrode modification layer
US8026512B2 (en) 2006-11-16 2011-09-27 Panasonic Corporation Mobility engineered electroluminescent devices
EP2132213B1 (en) * 2007-03-07 2013-05-15 University of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
WO2009099205A1 (ja) 2008-02-08 2009-08-13 National University Corporation Kyoto Institute Of Technology 発光デバイスの駆動方法及び駆動装置
JP2009218529A (ja) * 2008-03-13 2009-09-24 Kyocera Corp 発光素子及びその製造方法
US8513654B2 (en) * 2008-04-10 2013-08-20 Idemitsu Kosan Co. Ltd. Compound for organic thin-film transistor and organic thin-film transistor using the compound
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5447794B2 (ja) 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
CN1459877A (zh) * 2002-05-21 2003-12-03 株式会社半导体能源研究所 有机场效应晶体管
CN1652350A (zh) * 2003-11-25 2005-08-10 三星Sdi株式会社 薄膜晶体管及其制造方法
US20060188745A1 (en) * 2005-02-23 2006-08-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Integrating organic light-emitting diode and field-effect-transistor in a single device;Bin Wei等人;《ORGANIC ELECTRONICS》;20080601;第9卷(第3期);全文 *

Also Published As

Publication number Publication date
KR20140065404A (ko) 2014-05-29
US8772765B2 (en) 2014-07-08
EP2583329B1 (en) 2014-04-09
JP5878632B2 (ja) 2016-03-08
JP2014526122A (ja) 2014-10-02
EP2583329A1 (en) 2013-04-24
US20130175518A1 (en) 2013-07-11
WO2013018000A1 (en) 2013-02-07
CN103718326A (zh) 2014-04-09
ITMI20111447A1 (it) 2013-01-30
KR101595341B1 (ko) 2016-02-18

Similar Documents

Publication Publication Date Title
CN103718326B (zh) 电致发光有机晶体管
US8729540B2 (en) Electroluminescent organic transistor
JP6025874B2 (ja) 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ
JP5872038B2 (ja) 電界発光有機二重ゲートトランジスタ
CN106920827B (zh) 一种发光二极管、阵列基板、发光器件及显示装置
EP2911214B1 (en) Multilayer structure of an OLET transistor
JP2003282884A (ja) サイドゲート型有機fet及び有機el
CN103956433A (zh) 一种单极型有机发光场效应晶体管
CN103325815B (zh) 有机发光器件和制造有机发光器件的方法
CN103972390B (zh) 一种双极型有机发光场效应晶体管
US9343707B2 (en) Electroluminescent organic double gate transistor
TW200503300A (en) Field emission diode (FED)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Bologna, Italy

Patentee after: E.T.C. Limited Liability Company in Liquidation

Address before: Bologna, Italy

Patentee before: E.T.C. S.R.L.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190308

Address after: Illinois Instrunment

Patentee after: POLYERA Corp.

Address before: Bologna, Italy

Patentee before: E.T.C. Limited Liability Company in Liquidation

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160427