JP5872583B2 - 光周波数整流用の方法及び装置 - Google Patents
光周波数整流用の方法及び装置 Download PDFInfo
- Publication number
- JP5872583B2 JP5872583B2 JP2013544505A JP2013544505A JP5872583B2 JP 5872583 B2 JP5872583 B2 JP 5872583B2 JP 2013544505 A JP2013544505 A JP 2013544505A JP 2013544505 A JP2013544505 A JP 2013544505A JP 5872583 B2 JP5872583 B2 JP 5872583B2
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- current
- mcnt
- nanowire
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 39
- 230000003287 optical effect Effects 0.000 title description 22
- 230000005855 radiation Effects 0.000 claims description 49
- 238000001228 spectrum Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000000295 emission spectrum Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 2
- 239000002070 nanowire Substances 0.000 description 72
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 18
- 230000004044 response Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 230000005641 tunneling Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 210000003976 gap junction Anatomy 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004141 dimensional analysis Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/44—Details of, or arrangements associated with, antennas using equipment having another main function to serve additionally as an antenna, e.g. means for giving an antenna an aesthetic aspect
- H01Q1/46—Electric supply lines or communication lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/248—Supports; Mounting means by structural association with other equipment or articles with receiving set provided with an AC/DC converting device, e.g. rectennas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Rectifiers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Details Of Aerials (AREA)
- Light Receiving Elements (AREA)
Description
本願は、2010年1月4日に出願された米国仮出願第61/335201号の優先権を主張し、その全内容は参照として本願に組み込まれる。
図1A
180 入射放射
188 点接触接合
190 ナノワイヤ、ナノチューブ
196 外部負荷
198 コレクタ電極
199 パッチアンテナ
Claims (3)
- 入射放射を受信してDC電流に変換するための方法であって、
鋭い縁を備えた末端のチップを有し、幾何学的に非対称なトンネル接合の一部であり、且つ前記入射放射を受信可能なアンテナであって、前記アンテナ上にプラズモン層が積層されるアンテナの適切な実施形態を選択するステップと、
前記入射放射の放射スペクトルを決定するステップと、
前記放射スペクトルが狭帯域であるか広帯域であるかに応じて前記チップの形状及び材質に対する一組の幾何学的パラメータ及び物質パラメータを求めるステップと、
前記放射スペクトルの最高周波数に応答するのに十分小さなギャップ距離を決定するステップであって、前記ギャップ距離を決定するステップにおけるギャップは、前記プラズモン層の末端部によって画された面とコレクタ電極によって画された面とを備える、ステップと、
前記ギャップ距離が放射スペクトルの最高周波数に応答するのに十分小さい時に、前記入射放射による前記アンテナへの光子の吸収により前記アンテナの長手方向に沿ってAC電流を誘起し、続いて幾何学的に非対称なトンネル接合においてAC電圧を誘起するステップと、
誘起されたAC電圧が電界放出用に十分大きいかどうかを計算するステップと、
誘起されたAC電圧が正の正味のDC電流を生成するのに十分大きい時に、幾何学的に非対称なトンネル接合に順方向バイアス及び逆方向バイアスをかけるステップと、
前記正の正味のDC電流を前記コレクタ電極によって収集するステップと、
正の正味のDC電流を外部回路に伝えるステップとを備えた方法。 - 前記アンテナがパッチアンテナである、請求項1に記載の方法。
- 前記アンテナがウィスカアンテナである、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/973,262 | 2010-12-20 | ||
US12/973,262 US8299655B2 (en) | 2010-01-04 | 2010-12-20 | Method and apparatus for an optical frequency rectifier |
PCT/US2011/061843 WO2012087482A1 (en) | 2010-12-20 | 2011-11-22 | A method and apparatus for an optical frequency rectifier |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015228612A Division JP6058775B2 (ja) | 2010-12-20 | 2015-11-24 | 光周波数整流用の方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014510389A JP2014510389A (ja) | 2014-04-24 |
JP5872583B2 true JP5872583B2 (ja) | 2016-03-01 |
Family
ID=44224412
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013544505A Expired - Fee Related JP5872583B2 (ja) | 2010-12-20 | 2011-11-22 | 光周波数整流用の方法及び装置 |
JP2015228612A Expired - Fee Related JP6058775B2 (ja) | 2010-12-20 | 2015-11-24 | 光周波数整流用の方法及び装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015228612A Expired - Fee Related JP6058775B2 (ja) | 2010-12-20 | 2015-11-24 | 光周波数整流用の方法及び装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8299655B2 (ja) |
EP (1) | EP2656440A4 (ja) |
JP (2) | JP5872583B2 (ja) |
KR (1) | KR101862183B1 (ja) |
CN (2) | CN105355705A (ja) |
IL (1) | IL226140A0 (ja) |
WO (1) | WO2012087482A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9472699B2 (en) | 2007-11-13 | 2016-10-18 | Battelle Energy Alliance, Llc | Energy harvesting devices, systems, and related methods |
CN102203949B (zh) * | 2008-07-25 | 2014-10-22 | 特拉维夫大学拉莫特有限公司 | 整流天线设备、整流天线系统、和制造整流天线设备的方法 |
US9147790B2 (en) * | 2010-01-04 | 2015-09-29 | Scitech Associates Holdings, Inc. | Method and apparatus for an optical frequency rectifier |
US8847824B2 (en) | 2012-03-21 | 2014-09-30 | Battelle Energy Alliance, Llc | Apparatuses and method for converting electromagnetic radiation to direct current |
JP6404222B2 (ja) * | 2012-10-19 | 2018-10-10 | ジョージア テック リサーチ コーポレイション | カーボンナノチューブの配向アレイ上に形成された多層被膜 |
KR101929547B1 (ko) * | 2014-05-20 | 2019-03-14 | 재단법인대구경북과학기술원 | 안테나와 정류소자의 일체형 전력 생산 장치 |
KR101531604B1 (ko) * | 2014-07-18 | 2015-06-26 | 재단법인대구경북과학기술원 | 태양광 발전을 위한 나노 안테나 장치 |
EP3238275A4 (en) * | 2014-12-24 | 2018-10-10 | Novasolix, Inc. | Solar antenna array and its fabrication |
US10580920B2 (en) | 2016-04-20 | 2020-03-03 | Novasolix, Inc. | Solar antenna array fabrication |
US11114633B2 (en) * | 2016-04-20 | 2021-09-07 | Novasolix, Inc. | Solar antenna array fabrication |
US10622503B2 (en) | 2016-04-20 | 2020-04-14 | Novasolix, Inc. | Solar antenna array fabrication |
US11824264B2 (en) | 2016-04-20 | 2023-11-21 | Novasolix, Inc. | Solar antenna array fabrication |
US10297752B2 (en) | 2016-08-08 | 2019-05-21 | Nanohmics, Inc. | Rectifier for electromagnetic radiation |
IT201600124680A1 (it) * | 2016-12-09 | 2018-06-09 | Fondazione St Italiano Tecnologia | Cella di nanorectenna plasmonica a molte punte. |
GB201700960D0 (en) | 2017-01-20 | 2017-03-08 | King's College London | Plasmonic metamaterial structure |
US10978598B2 (en) | 2017-05-12 | 2021-04-13 | University Of Connecticut | Electro-optic nanoscale probes |
US11626484B2 (en) * | 2017-09-20 | 2023-04-11 | Wisconsin Alumni Research Foundation | High efficiency room temperature infrared sensor |
EP3493283A1 (en) * | 2017-12-04 | 2019-06-05 | Université d'Aix Marseille | Plasmonic rectenna device and method of manufacturing |
EP3721544B1 (en) * | 2017-12-04 | 2022-03-23 | Green Arise Ltd | Converter for converting an electromagnetic wave in a continuous electric current |
CN110365422B (zh) * | 2018-04-04 | 2021-01-29 | 京东方科技集团股份有限公司 | 一种信号处理装置及其制备方法 |
CN109598323B (zh) * | 2018-11-12 | 2019-11-08 | 晓函安全(北京)科技有限公司 | 一种芯片 |
CN110993719B (zh) * | 2019-11-25 | 2021-11-02 | 国家纳米科学中心 | 一种光频响应电子隧穿结构、其制备方法和用途 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
JP3135524B2 (ja) | 1997-12-05 | 2001-02-19 | セイコーインスツルメンツ株式会社 | 光励起電界放射型光−電流変換器 |
US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
WO2005067059A1 (ja) * | 2003-12-26 | 2005-07-21 | Fuji Xerox Co., Ltd. | 整流素子およびそれを用いた電子回路、並びに整流素子の製造方法 |
JP2005276498A (ja) * | 2004-03-23 | 2005-10-06 | Fuji Xerox Co Ltd | 電子線発生素子とその製造方法 |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
EP1917557A4 (en) * | 2005-08-24 | 2015-07-22 | Trustees Boston College | APPARATUS AND METHODS FOR SOLAR ENERGY CONVERSION IMPLEMENTING COMPOSITE METAL STRUCTURES OF NANOMETRIC SCALE |
WO2008108824A2 (en) * | 2006-10-10 | 2008-09-12 | The Trustees Of The University Of Pennsylvania | Lumped plasmonic diode and lumped plasmonic rectifier |
US20080093529A1 (en) * | 2006-10-18 | 2008-04-24 | Miles Mark W | Methods, materials, and devices for the conversion of radiation into electrical energy |
US20110100440A1 (en) * | 2007-08-14 | 2011-05-05 | William Marsh Rice University | Optical Rectification Device and Method of Making Same |
US8115683B1 (en) * | 2008-05-06 | 2012-02-14 | University Of South Florida | Rectenna solar energy harvester |
US7799988B2 (en) * | 2008-06-13 | 2010-09-21 | Cutler Paul H | Apparatus and system for a single element solar cell |
CN102203949B (zh) * | 2008-07-25 | 2014-10-22 | 特拉维夫大学拉莫特有限公司 | 整流天线设备、整流天线系统、和制造整流天线设备的方法 |
PT2351100T (pt) * | 2008-11-14 | 2020-04-21 | Bandgap Eng Inc | Dispositivos nanoestruturados |
-
2010
- 2010-12-20 US US12/973,262 patent/US8299655B2/en not_active Expired - Fee Related
-
2011
- 2011-11-22 WO PCT/US2011/061843 patent/WO2012087482A1/en active Application Filing
- 2011-11-22 EP EP20110850522 patent/EP2656440A4/en not_active Withdrawn
- 2011-11-22 JP JP2013544505A patent/JP5872583B2/ja not_active Expired - Fee Related
- 2011-11-22 CN CN201510627007.0A patent/CN105355705A/zh active Pending
- 2011-11-22 KR KR1020137012040A patent/KR101862183B1/ko active IP Right Grant
- 2011-11-22 CN CN201180054072.9A patent/CN103229358B/zh not_active Expired - Fee Related
-
2013
- 2013-05-02 IL IL226140A patent/IL226140A0/en unknown
-
2015
- 2015-11-24 JP JP2015228612A patent/JP6058775B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2012087482A1 (en) | 2012-06-28 |
JP2014510389A (ja) | 2014-04-24 |
EP2656440A1 (en) | 2013-10-30 |
KR101862183B1 (ko) | 2018-05-29 |
US20110163920A1 (en) | 2011-07-07 |
CN103229358B (zh) | 2015-09-16 |
CN105355705A (zh) | 2016-02-24 |
US8299655B2 (en) | 2012-10-30 |
JP2016034041A (ja) | 2016-03-10 |
KR20140018188A (ko) | 2014-02-12 |
JP6058775B2 (ja) | 2017-01-11 |
IL226140A0 (en) | 2013-06-27 |
EP2656440A4 (en) | 2014-11-05 |
CN103229358A (zh) | 2013-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6058775B2 (ja) | 光周波数整流用の方法及び装置 | |
US9147790B2 (en) | Method and apparatus for an optical frequency rectifier | |
US7799988B2 (en) | Apparatus and system for a single element solar cell | |
US9348078B2 (en) | Optical antennas with enhanced fields and electron emission | |
Miskovsky et al. | Nanoscale devices for rectification of high frequency radiation from the infrared through the visible: a new approach | |
JP4845988B2 (ja) | アンテナ装置 | |
US20070240757A1 (en) | Solar cells using arrays of optical rectennas | |
US8507890B1 (en) | Photoconversion device with enhanced photon absorption | |
Dagenais et al. | Solar spectrum rectification using nano-antennas and tunneling diodes | |
KR20080069958A (ko) | 나노 스케일 코메탈 구조물을 사용하는 태양 에너지 변환을위한 장치 및 방법 | |
JP7438961B2 (ja) | プラズモンレクテナ装置及び製造方法 | |
Zhu et al. | Overview of optical rectennas for solar energy harvesting | |
US7091918B1 (en) | Rectifying antenna and method of manufacture | |
US11495702B2 (en) | Multiple layer charge-coupled photovoltaic device | |
Hamied et al. | Design and analysis of a nano-rectenna based on multi-insulator tunnel barrier for solar energy harvesting | |
Periasamy et al. | Metal-insulator-metal point-contact diodes as a rectifier for rectenna | |
Sayed et al. | Harvesting thermal infrared emission using nanodipole terminated by traveling wave rectifier | |
Khoshdel et al. | Design and optimization of slot nano-antennas for ambient thermal energy harvesting | |
Krishnan et al. | Nanoscale Rectenna for Thermal Energy Conversion to Electricity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150715 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150824 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151124 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151214 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5872583 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |