JP5863442B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP5863442B2
JP5863442B2 JP2011280836A JP2011280836A JP5863442B2 JP 5863442 B2 JP5863442 B2 JP 5863442B2 JP 2011280836 A JP2011280836 A JP 2011280836A JP 2011280836 A JP2011280836 A JP 2011280836A JP 5863442 B2 JP5863442 B2 JP 5863442B2
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JP
Japan
Prior art keywords
diode
semiconductor module
sic
switching element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011280836A
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English (en)
Japanese (ja)
Other versions
JP2013132155A5 (enExample
JP2013132155A (ja
Inventor
玲 米山
玲 米山
浩之 岡部
浩之 岡部
貴公 井上
貴公 井上
伸次 酒井
伸次 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011280836A priority Critical patent/JP5863442B2/ja
Priority to US13/600,910 priority patent/US8823018B2/en
Priority to CN201210366646.2A priority patent/CN103178817B/zh
Priority to DE102012220164A priority patent/DE102012220164A1/de
Publication of JP2013132155A publication Critical patent/JP2013132155A/ja
Publication of JP2013132155A5 publication Critical patent/JP2013132155A5/ja
Application granted granted Critical
Publication of JP5863442B2 publication Critical patent/JP5863442B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes

Landscapes

  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011280836A 2011-12-22 2011-12-22 半導体モジュール Active JP5863442B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011280836A JP5863442B2 (ja) 2011-12-22 2011-12-22 半導体モジュール
US13/600,910 US8823018B2 (en) 2011-12-22 2012-08-31 Semiconductor module including a switching element formed of a wide bandgap semiconductor
CN201210366646.2A CN103178817B (zh) 2011-12-22 2012-09-28 半导体模块
DE102012220164A DE102012220164A1 (de) 2011-12-22 2012-11-06 Halbleitermodul

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011280836A JP5863442B2 (ja) 2011-12-22 2011-12-22 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2013132155A JP2013132155A (ja) 2013-07-04
JP2013132155A5 JP2013132155A5 (enExample) 2014-01-30
JP5863442B2 true JP5863442B2 (ja) 2016-02-16

Family

ID=48575819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011280836A Active JP5863442B2 (ja) 2011-12-22 2011-12-22 半導体モジュール

Country Status (4)

Country Link
US (1) US8823018B2 (enExample)
JP (1) JP5863442B2 (enExample)
CN (1) CN103178817B (enExample)
DE (1) DE102012220164A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016144326A (ja) * 2015-02-03 2016-08-08 富士電機株式会社 共振型ｄｃ−ｄｃコンバータ
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
JP6852445B2 (ja) * 2017-02-16 2021-03-31 富士電機株式会社 半導体装置
DE102018114375B4 (de) * 2018-06-15 2024-06-13 Infineon Technologies Ag Leistungselektronikanordnung
TWI877401B (zh) * 2020-08-20 2025-03-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
TW202226529A (zh) * 2020-08-20 2022-07-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
CN112054789B (zh) * 2020-09-10 2021-08-20 成都市凌巨通科技有限公司 一种芯片大功率pin开关控制系统
US12671315B2 (en) 2022-08-26 2026-06-30 Board Of Trustees Of The University Of Arkansas Adaptive silicon carbide gate drivers in integrated circuit form

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008061404A (ja) 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
JP4980126B2 (ja) * 2007-04-20 2012-07-18 株式会社日立製作所 フリーホイールダイオードとを有する回路装置
JP5267201B2 (ja) * 2009-02-23 2013-08-21 日産自動車株式会社 スイッチング回路
JP5476028B2 (ja) 2009-04-17 2014-04-23 株式会社日立製作所 パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路
JP5212303B2 (ja) 2009-07-31 2013-06-19 ダイキン工業株式会社 電力変換装置
JP5554140B2 (ja) * 2009-09-04 2014-07-23 三菱電機株式会社 電力変換回路
JP5095803B2 (ja) 2010-11-11 2012-12-12 三菱電機株式会社 電力半導体モジュール

Also Published As

Publication number Publication date
US20130161644A1 (en) 2013-06-27
DE102012220164A1 (de) 2013-06-27
JP2013132155A (ja) 2013-07-04
CN103178817B (zh) 2016-12-21
CN103178817A (zh) 2013-06-26
US8823018B2 (en) 2014-09-02

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