JP5853277B2 - 電子ビーム蒸着装置 - Google Patents
電子ビーム蒸着装置 Download PDFInfo
- Publication number
- JP5853277B2 JP5853277B2 JP2011243532A JP2011243532A JP5853277B2 JP 5853277 B2 JP5853277 B2 JP 5853277B2 JP 2011243532 A JP2011243532 A JP 2011243532A JP 2011243532 A JP2011243532 A JP 2011243532A JP 5853277 B2 JP5853277 B2 JP 5853277B2
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- JP
- Japan
- Prior art keywords
- vapor deposition
- electron beam
- deposition material
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005566 electron beam evaporation Methods 0.000 title claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 68
- 239000000463 material Substances 0.000 claims description 57
- 238000010894 electron beam technology Methods 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000012788 optical film Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 description 15
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
Description
図3は本発明の実施例の電子ビーム蒸着装置を示す図である。図3に示すように、電子ビーム蒸着装置1は、電子銃2、蒸着材料3、坩堝4、基板5及び基板保持部6で構成されている。図示していないが、真空下で蒸着を行う場合、真空排気装置及びガス導入装置などに接続された密閉容器からなる真空槽内で蒸着を行う。
2.電子銃
3.蒸着材料
4.坩堝
5.基板
6.基板保持部
Claims (5)
- 電子ビーム蒸着装置であって、
蒸着材料が充填される坩堝、
前記蒸着材料に電子ビームを照射して該蒸着材料を蒸発させるための電子銃、及び
前記坩堝に対向して配置され、蒸発した前記蒸着材料が成膜される基板を保持する基板保持部を備え、
前記蒸着材料は、二酸化ケイ素であり、
前記電子ビームの出力電力が1.2〜3.0kWの範囲で、前記成膜の条件に基づいて加速電圧が数値2kV以上〜4kV以下の範囲で設定された電子ビーム蒸着装置。 - 前記成膜の条件とは、前記蒸着材料の誘電率である請求項1記載の電子ビーム蒸着装置。
- 前記成膜の条件とは、前記蒸着材料の高さである請求項1記載の電子ビーム蒸着装置。
- 前記成膜の条件とは、前記電子ビームの照射面積である請求項1記載の電子ビーム蒸着装置。
- 前記基板に光学膜を形成する請求項1記載の電子ビーム蒸着装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011243532A JP5853277B2 (ja) | 2011-11-07 | 2011-11-07 | 電子ビーム蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011243532A JP5853277B2 (ja) | 2011-11-07 | 2011-11-07 | 電子ビーム蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013100567A JP2013100567A (ja) | 2013-05-23 |
JP5853277B2 true JP5853277B2 (ja) | 2016-02-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011243532A Active JP5853277B2 (ja) | 2011-11-07 | 2011-11-07 | 電子ビーム蒸着装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5853277B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003202400A (ja) * | 2001-10-31 | 2003-07-18 | Fuji Photo Film Co Ltd | 放射線像変換パネルの製造方法 |
JP4858127B2 (ja) * | 2006-12-01 | 2012-01-18 | 凸版印刷株式会社 | 真空蒸着装置および真空蒸着方法 |
JP2010180431A (ja) * | 2009-02-03 | 2010-08-19 | Fuji Titan Kogyo Kk | 蒸着材料、光学薄膜及びそれらの製造方法 |
JP2010031384A (ja) * | 2009-11-09 | 2010-02-12 | Toshiba Corp | 光学薄膜および光学部品 |
-
2011
- 2011-11-07 JP JP2011243532A patent/JP5853277B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2013100567A (ja) | 2013-05-23 |
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