JP5847809B2 - ドープした半導体領域の活性ドーピング濃度の決定方法 - Google Patents

ドープした半導体領域の活性ドーピング濃度の決定方法 Download PDF

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JP5847809B2
JP5847809B2 JP2013512942A JP2013512942A JP5847809B2 JP 5847809 B2 JP5847809 B2 JP 5847809B2 JP 2013512942 A JP2013512942 A JP 2013512942A JP 2013512942 A JP2013512942 A JP 2013512942A JP 5847809 B2 JP5847809 B2 JP 5847809B2
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profile
reflectance
measurement data
measurement
light modulation
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JP2013512942A
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Japanese (ja)
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JP2013533959A (ja
JP2013533959A5 (enExample
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ヤヌス・ボフダノウィッツィ
トルド・クラリス
ウィルフリート・ファンデルフォルスト
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013512942A 2010-06-04 2011-06-06 ドープした半導体領域の活性ドーピング濃度の決定方法 Expired - Fee Related JP5847809B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35170510P 2010-06-04 2010-06-04
US61/351,705 2010-06-04
US201161487162P 2011-05-17 2011-05-17
US61/487,162 2011-05-17
PCT/EP2011/059258 WO2011151468A1 (en) 2010-06-04 2011-06-06 Method for determining the active doping concentration of a doped semiconductor region

Publications (3)

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JP2013533959A JP2013533959A (ja) 2013-08-29
JP2013533959A5 JP2013533959A5 (enExample) 2014-06-19
JP5847809B2 true JP5847809B2 (ja) 2016-01-27

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JP2013512942A Expired - Fee Related JP5847809B2 (ja) 2010-06-04 2011-06-06 ドープした半導体領域の活性ドーピング濃度の決定方法

Country Status (4)

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US (1) US8717570B2 (enExample)
JP (1) JP5847809B2 (enExample)
CN (1) CN102939527B (enExample)
WO (1) WO2011151468A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012010647A1 (en) * 2010-07-21 2012-01-26 Imec Method for determining an active dopant profile
WO2016051279A1 (en) * 2014-10-02 2016-04-07 Lacey Stuart H Systems and methods for context-based permissioning of personally identifiable information
DE102016000051A1 (de) * 2016-01-05 2017-07-06 Siltectra Gmbh Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern
CN106199365B (zh) * 2016-06-17 2018-11-23 深圳市华星光电技术有限公司 Oled掺杂浓度的选择方法
JP2018133473A (ja) * 2017-02-16 2018-08-23 富士電機株式会社 半導体装置の製造方法および半導体装置
CN111639441A (zh) * 2020-06-09 2020-09-08 无锡工艺职业技术学院 改善硅基功率晶体管电流放大倍数高低温变化率的方法
CN117233568B (zh) * 2023-11-10 2024-02-13 青禾晶元(天津)半导体材料有限公司 载流子迁移率的计算方法和装置
CN120064234A (zh) * 2025-04-29 2025-05-30 内蒙古华泰瀚光环境科技有限公司 一种用于重金属离子浓度的荧光检测方法及系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043019A (ja) * 2005-08-05 2007-02-15 Toshiba Corp 半導体評価装置および半導体処理装置
GB0518200D0 (en) * 2005-09-07 2005-10-19 Imec Inter Uni Micro Electr A method and device to quantify active carrier profiles in ultra-shallow semiconductor structures
US7502104B2 (en) * 2006-08-10 2009-03-10 Kla-Tencor Corporation Probe beam profile modulated optical reflectance system and methods
CN1971868A (zh) * 2006-12-13 2007-05-30 中国科学院光电技术研究所 一种基于自由载流子吸收技术的半导体掺杂浓度测量方法
US20100002236A1 (en) * 2008-06-27 2010-01-07 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for determining the doping profile of a partially activated doped semiconductor region
CN101527273B (zh) * 2009-04-10 2012-04-18 中国科学院光电技术研究所 一种半导体材料特性的测量装置

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US20130155409A1 (en) 2013-06-20
CN102939527A (zh) 2013-02-20
JP2013533959A (ja) 2013-08-29
WO2011151468A1 (en) 2011-12-08
CN102939527B (zh) 2016-05-04
US8717570B2 (en) 2014-05-06

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