JP5845085B2 - Resin-encapsulated power semiconductor module and manufacturing method thereof - Google Patents

Resin-encapsulated power semiconductor module and manufacturing method thereof Download PDF

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JP5845085B2
JP5845085B2 JP2011282770A JP2011282770A JP5845085B2 JP 5845085 B2 JP5845085 B2 JP 5845085B2 JP 2011282770 A JP2011282770 A JP 2011282770A JP 2011282770 A JP2011282770 A JP 2011282770A JP 5845085 B2 JP5845085 B2 JP 5845085B2
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康友 赤澤
康友 赤澤
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日本インター株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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本発明は、外部端子の第１曲げ加工時に、鉛直部分と水平部分とそれらの間の屈曲した接続部分とを有する概略Ｌ字状のＬ字部分であって、水平部分が鉛直部分に対して第１の側に位置する概略Ｌ字状のＬ字部分を外部端子に形成し、パワー半導体素子と第１曲げ加工後の外部端子とをベース部材に搭載し、第１曲げ加工後の外部端子の水平部分の上面と、ベース部材の一部分とが樹脂部の外部に露出するように、樹脂材料の成形によって、パワー半導体素子と第１曲げ加工後の外部端子とベース部材とを封止する樹脂封止型パワー半導体モジュールに関する。   The present invention provides a substantially L-shaped portion having a vertical portion, a horizontal portion, and a bent connection portion between the vertical portion and the horizontal portion with respect to the vertical portion during the first bending of the external terminal. A substantially L-shaped L-shaped portion located on the first side is formed on the external terminal, the power semiconductor element and the external terminal after the first bending are mounted on the base member, and the external terminal after the first bending Resin that seals the power semiconductor element, the external terminal after the first bending, and the base member by molding a resin material so that the upper surface of the horizontal portion of the substrate and a part of the base member are exposed to the outside of the resin portion The present invention relates to a sealed power semiconductor module.

詳細には、本発明は、第１曲げ加工後の外部端子の水平部分の上面が、第２曲げ加工後の外部端子の水平部分の下面になり、かつ、第１曲げ加工後の外部端子の水平部分の下面が、第２曲げ加工後の外部端子の水平部分の上面になるように、外部端子の第２曲げ加工を行い、外部端子の第２曲げ加工時に、鉛直部分と水平部分とそれらの間の屈曲した接続部分とを有する概略Ｌ字状のＬ字部分であって、水平部分が鉛直部分に対して第１の側とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分を外部端子に形成する樹脂封止型パワー半導体モジュールに関する。   Specifically, in the present invention, the upper surface of the horizontal portion of the external terminal after the first bending is the lower surface of the horizontal portion of the external terminal after the second bending, and the external terminal of the external terminal after the first bending is processed. The second bending of the external terminal is performed so that the lower surface of the horizontal portion becomes the upper surface of the horizontal portion of the external terminal after the second bending process. During the second bending of the external terminal, A substantially L-shaped portion having a bent connecting portion between the horizontal portion and a horizontal portion located on a second side opposite to the first side with respect to the vertical portion. The present invention relates to a resin-encapsulated power semiconductor module in which an L-shaped portion is formed on an external terminal.

特に、本発明は、第１曲げ加工後の外部端子の接続部分の位置が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる樹脂封止型パワー半導体モジュールに関する。   In particular, the present invention relates to a resin-encapsulated power semiconductor module that can reduce the possibility that the position of the connection portion of the external terminal after the first bending process will be damaged during or after the second bending process.

従来から、外部端子の第１曲げ加工時に、鉛直部分と水平部分とそれらの間の屈曲した接続部分とを有する概略Ｌ字状のＬ字部分であって、水平部分が鉛直部分に対して第１の側（特開平１０−２２４３５号公報の図３（ａ）の左側）に位置する概略Ｌ字状のＬ字部分を外部端子に形成し、パワー半導体素子と第１曲げ加工後の外部端子とをベース部材に搭載し、第１曲げ加工後の外部端子の水平部分の上面と、ベース部材の一部分とが樹脂部の外部に露出するように、樹脂材料の成形によって、パワー半導体素子と第１曲げ加工後の外部端子とベース部材とを封止する樹脂封止型パワー半導体モジュールが知られている。この種の樹脂封止型パワー半導体モジュールの例としては、例えば特許文献１（特開平１０−２２４３５号公報）の図３（ａ）に記載されたものがある。   Conventionally, at the time of the first bending of the external terminal, it is a substantially L-shaped portion having a vertical portion, a horizontal portion, and a bent connection portion therebetween, the horizontal portion being A substantially L-shaped L-shaped portion located on the first side (left side of FIG. 3A of Japanese Patent Laid-Open No. 10-22435) is formed on the external terminal, and the power semiconductor element and the external terminal after the first bending process Are mounted on the base member, and the power semiconductor element and the first are formed by molding the resin material so that the upper surface of the horizontal portion of the external terminal after the first bending process and a part of the base member are exposed to the outside of the resin portion. A resin-sealed power semiconductor module that seals an external terminal and a base member after one bending is known. As an example of this type of resin-encapsulated power semiconductor module, for example, there is one described in FIG. 3A of Patent Document 1 (Japanese Patent Laid-Open No. 10-22435).

特許文献１の図３に記載された樹脂封止型パワー半導体モジュールでは、次いで、第１曲げ加工後の外部端子の水平部分の上面が、第２曲げ加工後の外部端子の水平部分の下面になり、かつ、第１曲げ加工後の外部端子の水平部分の下面が、第２曲げ加工後の外部端子の水平部分の上面になるように、外部端子の第２曲げ加工が行われる（特許文献１の図３（ｃ）参照）。詳細には、外部端子の第２曲げ加工時に、鉛直部分と水平部分とそれらの間の屈曲した接続部分とを有する概略Ｌ字状のＬ字部分であって、水平部分が鉛直部分に対して第１の側とは反対側の第２の側（特開平１０−２２４３５号公報の図３（ｃ）の右側）に位置する概略Ｌ字状のＬ字部分が、外部端子に形成される。   In the resin-encapsulated power semiconductor module described in FIG. 3 of Patent Document 1, the upper surface of the horizontal portion of the external terminal after the first bending process is then aligned with the lower surface of the horizontal part of the external terminal after the second bending process. And the second bending of the external terminal is performed such that the lower surface of the horizontal portion of the external terminal after the first bending is the upper surface of the horizontal portion of the external terminal after the second bending (Patent Literature). 1 (see FIG. 3C). Specifically, it is a substantially L-shaped L-shaped part having a vertical part, a horizontal part, and a bent connection part between the vertical part and the horizontal part with respect to the vertical part during the second bending of the external terminal. A substantially L-shaped portion located on the second side opposite to the first side (the right side of FIG. 3C of Japanese Patent Laid-Open No. 10-22435) is formed on the external terminal.

また、特許文献１の図３に記載された樹脂封止型パワー半導体モジュールでは、外部端子の第１曲げ加工後にナットが樹脂部のナット挿入穴に挿入され（特許文献１の図３（ｂ）参照）、次いで、第２曲げ加工後の外部端子の水平部分によってナットが覆われる（特許文献１の図３（ｃ）参照）。   Further, in the resin-encapsulated power semiconductor module described in FIG. 3 of Patent Document 1, the nut is inserted into the nut insertion hole of the resin portion after the first bending of the external terminal (FIG. 3B of Patent Document 1). Next, the nut is covered with the horizontal portion of the external terminal after the second bending process (see FIG. 3C of Patent Document 1).

特開平１０−２２４３５号公報Japanese Patent Laid-Open No. 10-22435

ところで、特許文献１の図３（ａ）および図３（ｃ）に記載された樹脂封止型パワー半導体モジュールでは、第１曲げ加工後の外部端子の鉛直部分と水平部分との間の屈曲した接続部分が、第２曲げ加工後の外部端子の鉛直部分と水平部分との間の屈曲した接続部分になる。つまり、特許文献１の図３（ａ）および図３（ｃ）に記載された樹脂封止型パワー半導体モジュールでは、第１曲げ加工時に曲げ加工負荷がかかった第１曲げ加工後の外部端子の接続部分の位置に対し、第２曲げ加工時に、曲げ加工負荷が再びかけられる。そのため、特許文献１の図３（ａ）および図３（ｃ）に記載された樹脂封止型パワー半導体モジュールでは、第１曲げ加工後の外部端子の接続部分の位置が第２曲げ加工時またはその後に破損してしまうおそれがある。   By the way, in the resin-encapsulated power semiconductor module described in FIG. 3A and FIG. 3C of Patent Document 1, the bent portion between the vertical portion and the horizontal portion of the external terminal after the first bending is performed. The connecting portion becomes a bent connecting portion between the vertical portion and the horizontal portion of the external terminal after the second bending process. That is, in the resin-encapsulated power semiconductor module described in FIG. 3A and FIG. 3C of Patent Document 1, the external terminal after the first bending that is subjected to a bending load during the first bending is applied. The bending load is again applied to the position of the connecting portion during the second bending process. Therefore, in the resin-encapsulated power semiconductor module described in FIG. 3A and FIG. 3C of Patent Document 1, the position of the connection portion of the external terminal after the first bending is the second bending or There is a risk of subsequent damage.

前記問題点に鑑み、第１曲げ加工後の外部端子の接続部分の位置が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる樹脂封止型パワー半導体モジュール及びその製造方法を提供することを目的とする。 In view of the above problems, a resin-encapsulated power semiconductor module capable of reducing the possibility that the position of the connection portion of the external terminal after the first bending process is damaged during or after the second bending process and the manufacturing method thereof The purpose is to provide.

詳細には、本発明は、第１曲げ加工時の曲げ加工負荷および第２曲げ加工時の曲げ加工負荷が第１曲げ加工後の外部端子の接続部分の位置に集中してかけられている特許文献１の図３（ａ）および図３（ｃ）に記載された樹脂封止型パワー半導体モジュールよりも、第１曲げ加工後の外部端子の接続部分の位置が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる樹脂封止型パワー半導体モジュール及びその製造方法を提供することを目的とする。 Specifically, in the present invention, the bending load at the time of the first bending and the bending load at the time of the second bending are concentrated on the position of the connection portion of the external terminal after the first bending. Compared to the resin-encapsulated power semiconductor module described in FIGS. 3A and 3C of Document 1, the position of the connection portion of the external terminal after the first bending is at or after the second bending. It is an object of the present invention to provide a resin-encapsulated power semiconductor module that can reduce the risk of breakage and a method for manufacturing the same.

請求項１に記載の発明によれば、パワー半導体素子（２）と、板状の部材によって形成された外部端子（４）と、ベース部材（１）とを設け、
外部端子（４）の第１曲げ加工を行うことにより、鉛直部分（４ｂ）と水平部分（４ａ）とそれらの間の屈曲した接続部分（４ｄ）とを有する概略Ｌ字状のＬ字部分（４Ｌ）であって、水平部分（４ａ）が鉛直部分（４ｂ）に対して第１の側に位置する概略Ｌ字状のＬ字部分（４Ｌ）を、外部端子（４）に形成し、
少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とをベース部材（１）に搭載し、
少なくとも第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）と、ベース部材（１）の一部分とが樹脂部（５）の外部に露出するように、樹脂材料の成形によって、少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とベース部材（１）とを封止し、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の下面（４ａ２’）になり、かつ、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の下面（４ａ２）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になるように、外部端子（４）の第２曲げ加工を行い、
外部端子（４）の第２曲げ加工により、鉛直部分（４ｂ）と水平部分（４ａ’）とそれらの間の屈曲した接続部分（４ｄ’）とを有する概略Ｌ字状のＬ字部分（４Ｌ’）であって、水平部分（４ａ’）が鉛直部分（４ｂ）に対して第１の側とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分（４Ｌ’）が外部端子（４）に形成される樹脂封止型パワー半導体モジュール（１００）の製造方法において、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の先端側部分（４ａ−１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）になり、かつ、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の根元側部分（４ａ−２）と、第１曲げ加工後の外部端子（４）の接続部分（４ｄ）とが、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）になり、かつ、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の第１の側の凸状面（４ｄ１ａ’）の頂部（４ｄ１ａ１’）が、鉛直部分（４ｂ）の第１の側の側面（４ｂ２）よりも第１の側に位置するように、外部端子（４）の第２曲げ加工を行い、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）を樹脂部（５）の外部に露出させ、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の下側部分（４ｄ２’）の第２の側の凸状面（４ｄ２ｂ’）を樹脂部（５）によって覆い、
第１サブ曲げ加工と、第２サブ曲げ加工と、第３サブ曲げ加工と、第４サブ曲げ加工とによって第２曲げ加工を構成し、
外部端子（４）の第１サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）になる位置に第１芯金（ＣＢ１）の当接部（ＣＢ１ａ）を当接させて曲げ加工を行い、
外部端子（４）の第２サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の上側部分（４ｄ１ｂ２’）になる位置に第２芯金（ＣＢ２）の当接部（ＣＢ２ａ）を当接させて曲げ加工を行い、
外部端子（４）の第３サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）と上側部分（４ｄ１ｂ２’）との間の中間部分（４ｄ１ｂ３’）になる位置に第３芯金（ＣＢ３）の当接部（ＣＢ３ａ）を当接させて曲げ加工を行い、
外部端子（４）の第４サブ曲げ加工では、芯金を用いることなく、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になる位置を押し当て部材（ＰＳ）の下面（ＰＳ１）によって下向きに押圧することにより曲げ加工を行うことを特徴とする樹脂封止型パワー半導体モジュール（１００）の製造方法が提供される。 According to invention of Claim 1, a power semiconductor element (2), an external terminal (4) formed by a plate-like member, and a base member (1) are provided,
By performing the first bending process of the external terminal (4), a substantially L-shaped L-shaped portion (having a vertical portion (4b), a horizontal portion (4a), and a bent connection portion (4d) therebetween ( 4L), the horizontal portion (4a) is formed on the external terminal (4) with a substantially L-shaped portion (4L) having a substantially L shape located on the first side with respect to the vertical portion (4b),
At least the power semiconductor element (2) and the external terminal (4) after the first bending are mounted on the base member (1),
At least the upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending process and a part of the base member (1) are exposed to the outside of the resin part (5). By molding, at least the power semiconductor element (2), the external terminal (4) after the first bending process, and the base member (1) are sealed,
The upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending process becomes the lower surface (4a2 ') of the horizontal part (4a ′) of the external terminal (4) after the second bending process. And the lower surface (4a2) of the horizontal part (4a) of the external terminal (4) after the first bending process is the upper surface (4a1 ') of the horizontal part (4a') of the external terminal (4) after the second bending process. The second bending of the external terminal (4) is performed so that
Due to the second bending of the external terminal (4), a substantially L-shaped portion (4L) having a vertical portion (4b), a horizontal portion (4a ′), and a bent connection portion (4d ′) therebetween. '), And the horizontal portion (4a') is located on the second side opposite to the first side with respect to the vertical portion (4b). In the method for manufacturing the resin-encapsulated power semiconductor module (100) formed on the external terminal (4),
The front end side part (4a-1) of the horizontal part (4a) of the external terminal (4) after the first bending process becomes the horizontal part (4a ') of the external terminal (4) after the second bending process, and ,
The base part (4a-2) of the horizontal part (4a) of the external terminal (4) after the first bending process and the connection part (4d) of the external terminal (4) after the first bending process are the second. It becomes a connection part (4d ′) of the external terminal (4) after bending, and
The top portion (4d1a1 ′) of the convex surface (4d1a ′) on the first side of the connection portion (4d ′) of the external terminal (4) after the second bending is formed on the first side of the vertical portion (4b). side (4b2) to be located on a first side than, have a second bending line processing of external terminals (4),
A second concave surface (4d1b ′) of the upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending is exposed to the outside of the resin part (5);
The convex portion (4d2b ′) on the second side of the lower portion (4d2 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending is covered with the resin portion (5),
A second bending process is configured by the first sub bending process, the second sub bending process, the third sub bending process, and the fourth sub bending process,
In the first sub bending of the external terminal (4), the concave surface (4d1b ′) on the second side of the upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending process. Bending the contact portion (CB1a) of the first cored bar (CB1) at the position to become the lower portion (4d1b1 ′),
In the second sub bending process of the external terminal (4), the concave surface (4d1b ') on the second side of the upper part (4d1') of the connection part (4d ') of the external terminal (4) after the second bending process. The second cored bar (CB2) is brought into contact with the upper part (4d1b2 ′) of the second metal core (CB2a) and bent,
In the third sub-bending process of the external terminal (4), the concave surface (4d1b ') on the second side of the upper part (4d1') of the connection part (4d ') of the external terminal (4) after the second bending process. Bending by contacting the contact portion (CB3a) of the third cored bar (CB3) at a position that becomes the intermediate portion (4d1b3 ') between the lower portion (4d1b1') and the upper portion (4d1b2 ') And
In the fourth sub-bending process of the external terminal (4), the position that becomes the upper surface (4a1 ′) of the horizontal portion (4a ′) of the external terminal (4) after the second bending process is pressed without using a cored bar. method for producing a member resin-sealed power semiconductor module, wherein the line Ukoto bending by pressing downward by the lower surface (PS1) of the (PS) (100) is provided.

請求項２に記載の発明によれば、パワー半導体素子（２）と、板状の部材によって形成された外部端子（４）と、ベース部材（１）とを有し、
少なくともパワー半導体素子（２）と外部端子（４）とがベース部材（１）に搭載され、
外部端子（４）は、鉛直部分（４ｂ）と水平部分（４ａ’）とそれらの間の屈曲した接続部分（４ｄ’）とを有する概略Ｌ字状のＬ字部分（４Ｌ’）であって、水平部分（４ａ’）が鉛直部分（４ｂ）に対して鉛直部分（４ｂ）の第１の側の側面（４ｂ２）とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分（４Ｌ’）を備える樹脂封止型パワー半導体モジュール（１００）において、
外部端子（４）の接続部分（４ｄ’）の第１の側の凸状面（４ｄ１ａ’）の頂部（４ｄ１ａ１’）が、鉛直部分（４ｂ）の第１の側の側面（４ｂ２）よりも第１の側に位置する樹脂封止型パワー半導体モジュール（１００）が提供される。 According to invention of Claim 2 , it has a power semiconductor element (2), the external terminal (4) formed of the plate-shaped member, and a base member (1),
At least the power semiconductor element (2) and the external terminal (4) are mounted on the base member (1),
The external terminal (4) is a substantially L-shaped portion (4L ′) having a vertical portion (4b), a horizontal portion (4a ′), and a bent connection portion (4d ′) between them. The horizontal portion (4a ′) is located on the second side opposite to the first side surface (4b2) of the vertical portion (4b) with respect to the vertical portion (4b). In the resin-encapsulated power semiconductor module (100) including the portion (4L ′),
The top portion (4d1a1 ′) of the convex surface (4d1a ′) on the first side of the connection portion (4d ′) of the external terminal (4) is more than the side surface (4b2) on the first side of the vertical portion (4b). A resin-encapsulated power semiconductor module (100) located on the first side is provided.

請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、パワー半導体素子（２）と、板状の部材によって形成された外部端子（４）と、ベース部材（１）とが設けられている。更に、外部端子（４）の第１曲げ加工を行うことにより、鉛直部分（４ｂ）と水平部分（４ａ）とそれらの間の屈曲した接続部分（４ｄ）とを有する概略Ｌ字状のＬ字部分（４Ｌ）であって、水平部分（４ａ）が鉛直部分（４ｂ）に対して第１の側に位置する概略Ｌ字状のＬ字部分（４Ｌ）が、外部端子（４）に形成されている。 In the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1, a power semiconductor element (2), an external terminal (4) formed by a plate-shaped member, a base member (1), Is provided. Further, by performing the first bending process of the external terminal (4), a substantially L-shaped L-shape having a vertical portion (4b), a horizontal portion (4a), and a bent connection portion (4d) therebetween. A substantially L-shaped portion (4L), which is a portion (4L) and the horizontal portion (4a) is located on the first side with respect to the vertical portion (4b), is formed on the external terminal (4). ing.

また、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とがベース部材（１）に搭載されている。更に、少なくとも第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）と、ベース部材（１）の一部分とが樹脂部（５）の外部に露出するように、樹脂材料の成形によって、少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とベース部材（１）とが封止されている。 Moreover, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1, at least the power semiconductor element (2) and the external terminal (4) after the first bending are formed on the base member (1). It is installed. Further, at least the upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending process and a part of the base member (1) are exposed to the outside of the resin portion (5). By molding the material, at least the power semiconductor element (2), the external terminal (4) after the first bending process, and the base member (1) are sealed.

更に、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の下面（４ａ２’）になり、かつ、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の下面（４ａ２）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になるように、外部端子（４）の第２曲げ加工が行われている。 Furthermore, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1, the upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending is subjected to the second bending. The lower surface (4a2 ') of the horizontal portion (4a') of the external terminal (4) after processing, and the lower surface (4a2) of the horizontal portion (4a) of the external terminal (4) after the first bending processing, The second bending of the external terminal (4) is performed so as to be the upper surface (4a1 ′) of the horizontal portion (4a ′) of the external terminal (4) after the second bending.

また、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、外部端子（４）の第２曲げ加工により、鉛直部分（４ｂ）と水平部分（４ａ’）とそれらの間の屈曲した接続部分（４ｄ’）とを有する概略Ｌ字状のＬ字部分（４Ｌ’）であって、水平部分（４ａ’）が鉛直部分（４ｂ）に対して第１の側とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分（４Ｌ’）が外部端子（４）に形成されている。 Moreover, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1, the vertical part (4b), the horizontal part (4a '), and their parts are obtained by the second bending process of the external terminal (4). A substantially L-shaped L-shaped portion (4L ′) having a bent connecting portion (4d ′) between the horizontal portion (4a ′) and the first side with respect to the vertical portion (4b). A substantially L-shaped L-shaped portion (4L ′) located on the second side opposite to the second side is formed on the external terminal (4).

詳細には、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の先端側部分（４ａ−１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）になり、かつ、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の根元側部分（４ａ−２）と、第１曲げ加工後の外部端子（４）の接続部分（４ｄ）とが、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）になり、かつ、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の第１の側の凸状面（４ｄ１ａ’）の頂部（４ｄ１ａ１’）が、鉛直部分（４ｂ）の第１の側の側面（４ｂ２）よりも第１の側に位置するように、外部端子（４）の第２曲げ加工が行われている。 Specifically, in the method for manufacturing the resin-encapsulated power semiconductor module (100) according to claim 1, the front end side portion (4a-1) of the horizontal portion (4a) of the external terminal (4) after the first bending process. ) Becomes the horizontal portion (4a ′) of the external terminal (4) after the second bending process, and the base side part (4a−) of the horizontal part (4a) of the external terminal (4) after the first bending process. 2) and the connection part (4d) of the external terminal (4) after the first bending work become the connection part (4d ') of the external terminal (4) after the second bending work, and the second bending The top portion (4d1a1 ′) of the convex surface (4d1a ′) on the first side of the connection portion (4d ′) of the external terminal (4) after processing is the side surface (4b2) of the first side of the vertical portion (4b). The second bending of the external terminal (4) is performed so as to be positioned on the first side of the outer terminal (4).

換言すれば、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第１曲げ加工時に曲げ加工負荷がかかった第１曲げ加工後の外部端子（４）の接続部分（４ｄ）の位置だけでなく、第１曲げ加工時に曲げ加工負荷が殆どかかっていない第１曲げ加工後の外部端子（４）の水平部分（４ａ）の根元側部分（４ａ−２）の位置にも、第２曲げ加工時に、曲げ加工負荷が分散してかけられている。 In other words, in the method for manufacturing the resin-encapsulated power semiconductor module (100) according to claim 1, the connection portion of the external terminal (4) after the first bending, which is subjected to a bending load during the first bending. Not only the position of (4d), but also the position of the base side part (4a-2) of the horizontal part (4a) of the external terminal (4) after the first bending process where almost no bending load is applied during the first bending process In addition, the bending load is applied in a distributed manner during the second bending.

そのため、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法によれば、第１曲げ加工時の曲げ加工負荷および第２曲げ加工時の曲げ加工負荷が第１曲げ加工後の外部端子（４）の接続部分（４ｄ）の位置に集中してかけられている場合よりも、第１曲げ加工後の外部端子（４）の接続部分（４ｄ）の位置が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる。 Therefore, according to the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1, the bending load during the first bending process and the bending load during the second bending process are after the first bending process. The position of the connection portion (4d) of the external terminal (4) after the first bending is more than the case of being concentrated on the position of the connection portion (4d) of the external terminal (4). The risk of breakage at or after the time can be reduced.

さらに請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）が、樹脂部（５）の外部に露出せしめられている。そのため、請求項２に記載の樹脂封止型パワー半導体モジュール（１００）によれば、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）になる位置を、第２曲げ加工時に屈曲させることができる。 Furthermore, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1 , the second upper portion (4d1 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending is performed. The concave surface (4d1b ′) on the side of the resin is exposed to the outside of the resin portion (5). Therefore, according to the resin-encapsulated power semiconductor module (100) according to claim 2, the second of the upper portion (4d1 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending process. The position which becomes the concave surface (4d1b ′) on the side can be bent during the second bending process.

更に、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の下側部分（４ｄ２’）の第２の側の凸状面（４ｄ２ｂ’）が樹脂部（５）によって覆われている。 Furthermore, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1 , the lower portion (4d2 ') of the connection portion (4d') of the external terminal (4) after the second bending process is performed. The convex surface (4d2b ′) on the second side is covered with the resin portion (5).

そのため、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法によれば、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の下側部分（４ｄ２’）の第２の側の凸状面（４ｄ２ｂ’）になる位置が第１曲げ加工時および第２曲げ加工時に繰り返して屈曲せしめられないように、その位置を樹脂部（５）によって保護することができる。 Therefore, according to the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1 , the lower portion (4d2 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending process. ) Is protected by the resin portion (5) so that the second side convex surface (4d2b ′) is not repeatedly bent during the first bending process and the second bending process. Can do.

さらに、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第１サブ曲げ加工と、第２サブ曲げ加工と、第３サブ曲げ加工と、第４サブ曲げ加工とによって第２曲げ加工が構成されている。 Furthermore, in the manufacturing method of the resin-sealed power semiconductor module according to claim 1 (100), a first sub-bending, and the second sub-bending, and the third sub-bending, and the fourth sub-bending Thus, the second bending process is configured.

詳細には、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、外部端子（４）の第１サブ曲げ加工時に、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）になる位置に第１芯金（ＣＢ１）の当接部（ＣＢ１ａ）を当接させて曲げ加工が行われる。更に、外部端子（４）の第２サブ曲げ加工時に、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の上側部分（４ｄ１ｂ２’）になる位置に第２芯金（ＣＢ２）の当接部（ＣＢ２ａ）を当接させて曲げ加工が行われる。 Specifically, in the method for manufacturing the resin-encapsulated power semiconductor module (100) according to claim 1 , the external terminal (4) after the second bending process is performed during the first sub-bending process of the external terminal (4). The contact portion (CB1a) of the first core metal (CB1) at a position that becomes the lower portion (4d1b1 ′) of the concave surface (4d1b ′) on the second side of the upper portion (4d1 ′) of the connection portion (4d ′). ) Are brought into contact with each other and bending is performed. Furthermore, the concave surface (4d1b) on the second side of the upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending process during the second sub-bending process of the external terminal (4). Bending is performed by bringing the contact portion (CB2a) of the second metal core (CB2) into contact with the position of the upper portion (4d1b2 ') of').

また、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、外部端子（４）の第３サブ曲げ加工時に、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）と上側部分（４ｄ１ｂ２’）との間の中間部分（４ｄ１ｂ３’）になる位置に第３芯金（ＣＢ３）の当接部（ＣＢ３ａ）を当接させて曲げ加工が行われる。更に、外部端子（４）の第４サブ曲げ加工時に、芯金を用いることなく、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になる位置を押し当て部材（ＰＳ）の下面（ＰＳ１）によって下向きに押圧することにより曲げ加工が行われる。 Moreover, in the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1 , the connection portion of the external terminal (4) after the second bending process during the third sub-bending process of the external terminal (4) It becomes an intermediate part (4d1b3 ′) between the lower part (4d1b1 ′) and the upper part (4d1b2 ′) of the concave surface (4d1b ′) on the second side of the upper part (4d1 ′) of (4d ′). Bending is performed by bringing the contact portion (CB3a) of the third core metal (CB3) into contact with the position. Furthermore, the position which becomes the upper surface (4a1 ′) of the horizontal portion (4a ′) of the external terminal (4) after the second bending without using a cored bar during the fourth sub-bending of the external terminal (4). Bending is performed by pressing downward with the lower surface (PS1) of the pressing member (PS).

換言すれば、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）のうち、第１芯金（ＣＢ１）の当接部（ＣＢ１ａ）が当接せしめられた位置と、第２芯金（ＣＢ２）の当接部（ＣＢ２ａ）が当接せしめられた位置と、第３芯金（ＣＢ３）の当接部（ＣＢ３ａ）が当接せしめられた位置とが、互いに異ならされている。 In other words, in the method for manufacturing the resin-encapsulated power semiconductor module (100) according to claim 1 , the upper portion (4d1 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending process. Of the second side concave surface (4d1b ′), the position where the contact portion (CB1a) of the first core metal (CB1) is contacted, and the contact portion of the second core metal (CB2) ( The position where CB2a) is brought into contact is different from the position where the contact portion (CB3a) of the third cored bar (CB3) is brought into contact with each other.

そのため、請求項１に記載の樹脂封止型パワー半導体モジュール（１００）の製造方法によれば、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の同一位置に、第１芯金（ＣＢ１）の当接部（ＣＢ１ａ）と第２芯金（ＣＢ２）の当接部（ＣＢ２ａ）と第３芯金（ＣＢ３）の当接部（ＣＢ３ａ）とが繰り返して当接せしめられている場合よりも、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる。 Therefore, according to the manufacturing method of the resin-encapsulated power semiconductor module (100) according to claim 1 , the upper portion (4d1 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending process. In the same position of the concave surface (4d1b ′) on the second side, the contact portion (CB1a) of the first metal core (CB1), the contact portion (CB2a) of the second metal core (CB2), and the third core The upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending process, compared to the case where the contact part (CB3a) of gold (CB3) is repeatedly brought into contact with each other. Can be reduced during or after the second bending.

第１の実施形態の樹脂封止型パワー半導体モジュール１００を示した図である。It is the figure which showed the resin-sealed type power semiconductor module 100 of 1st Embodiment. 第１の実施形態の樹脂封止型パワー半導体モジュール１００を示した図である。It is the figure which showed the resin-sealed type power semiconductor module 100 of 1st Embodiment. 第１の実施形態の樹脂封止型パワー半導体モジュール１００の一部を構成する外部端子４の第１曲げ加工後の状態を示した図である。It is the figure which showed the state after the 1st bending process of the external terminal 4 which comprises some resin-sealed power semiconductor modules 100 of 1st Embodiment. 図３に示す第１曲げ加工後の外部端子４などをベース部材１に搭載することにより構成される第１組立体を示した図である。It is the figure which showed the 1st assembly comprised by mounting in the base member 1 the external terminal 4 etc. after the 1st bending process shown in FIG. 第１曲げ加工後の外部端子４の水平部分４ａの上面４ａ１、ベース部材１の下面１ｂなどが樹脂部５の外部に露出するように、図４に示す第１組立体を樹脂材料の成形によって封止することにより得られる第２組立体１０を示した図である。The first assembly shown in FIG. 4 is molded by resin material so that the upper surface 4a1 of the horizontal portion 4a of the external terminal 4 after the first bending and the lower surface 1b of the base member 1 are exposed to the outside of the resin portion 5. It is the figure which showed the 2nd assembly 10 obtained by sealing. 外部端子４の第２曲げ加工の一部を構成する第１サブ曲げ加工を説明するための図である。It is a figure for demonstrating the 1st sub bending process which comprises a part of 2nd bending process of the external terminal 4. FIG. 外部端子４の第２曲げ加工の一部を構成する第２サブ曲げ加工を説明するための図である。It is a figure for demonstrating the 2nd sub bending process which comprises a part of 2nd bending process of the external terminal 4. FIG. 外部端子４の第２曲げ加工の一部を構成する第３サブ曲げ加工を説明するための図である。It is a figure for demonstrating the 3rd sub bending process which comprises a part of 2nd bending process of the external terminal 4. FIG. 外部端子４の第２曲げ加工の一部を構成する第４サブ曲げ加工を説明するための図である。It is a figure for demonstrating the 4th sub bending process which comprises a part of 2nd bending process of the external terminal 4. FIG. 第１の実施形態の樹脂封止型パワー半導体モジュール１００の等価回路図である。It is an equivalent circuit diagram of the resin-sealed power semiconductor module 100 of the first embodiment.

以下、本発明の樹脂封止型パワー半導体モジュールの第１の実施形態について説明する。図１および図２は第１の実施形態の樹脂封止型パワー半導体モジュール１００の完成品を示した図である。詳細には、図１（Ａ）は第１の実施形態の樹脂封止型パワー半導体モジュール１００の平面図、図１（Ｂ）は第１の実施形態の樹脂封止型パワー半導体モジュール１００の正面図、図１（Ｃ）は第１の実施形態の樹脂封止型パワー半導体モジュール１００の右側面図、図１（Ｄ）は図１（Ａ）のＡ−Ａ線に沿った概略的な鉛直断面図、図１（Ｅ）は図１（Ａ）のＢ−Ｂ線に沿った概略的な鉛直断面図、図２（Ａ）および図２（Ｂ）は図１（Ｄ）の拡大図である。   Hereinafter, a first embodiment of the resin-encapsulated power semiconductor module of the present invention will be described. 1 and 2 are views showing a finished product of the resin-encapsulated power semiconductor module 100 of the first embodiment. Specifically, FIG. 1A is a plan view of the resin-encapsulated power semiconductor module 100 of the first embodiment, and FIG. 1B is a front view of the resin-encapsulated power semiconductor module 100 of the first embodiment. FIG. 1 (C) is a right side view of the resin-encapsulated power semiconductor module 100 of the first embodiment, and FIG. 1 (D) is a schematic vertical view along the line AA in FIG. 1 (A). 1E is a schematic vertical sectional view taken along line BB in FIG. 1A, and FIGS. 2A and 2B are enlarged views of FIG. 1D. is there.

図３は第１の実施形態の樹脂封止型パワー半導体モジュール１００の一部を構成する外部端子４の第１曲げ加工後の状態を示した図である。詳細には、図３（Ａ）は第１曲げ加工後の外部端子４の平面図、図３（Ｂ）は第１曲げ加工後の外部端子４の正面図、図３（Ｃ）は第１曲げ加工後の外部端子４の右側面図、図３（Ｄ）は図３（Ａ）のＣ−Ｃ線に沿った概略的な鉛直断面図である。図４は図３に示す第１曲げ加工後の外部端子４などをベース部材１に搭載することにより構成される第１組立体を示した図である。詳細には、図４（Ａ）は第１組立体の平面図、図４（Ｂ）は第１組立体の正面図、図４（Ｃ）は第１組立体の右側面図である。   FIG. 3 is a view showing a state after the first bending of the external terminal 4 constituting a part of the resin-encapsulated power semiconductor module 100 of the first embodiment. Specifically, FIG. 3A is a plan view of the external terminal 4 after the first bending process, FIG. 3B is a front view of the external terminal 4 after the first bending process, and FIG. The right side view of the external terminal 4 after bending, FIG. 3 (D) is a schematic vertical sectional view along the line CC in FIG. 3 (A). FIG. 4 is a view showing a first assembly configured by mounting the external terminals 4 and the like after the first bending process shown in FIG. 3 on the base member 1. Specifically, FIG. 4A is a plan view of the first assembly, FIG. 4B is a front view of the first assembly, and FIG. 4C is a right side view of the first assembly.

図５は第１曲げ加工後の外部端子４の水平部分４ａの上面４ａ１、ベース部材１の下面１ｂなどが樹脂部５の外部に露出するように、図４に示す第１組立体を樹脂材料の成形によって封止することにより得られる第２組立体１０を示した図である。詳細には、図５（Ａ）は第２組立体１０の平面図、図５（Ｂ）は第２組立体１０の正面図、図５（Ｃ）は第２組立体１０の右側面図、図５（Ｄ）は図５（Ａ）のＤ−Ｄ線に沿った概略的な鉛直断面図である。   5 shows the first assembly shown in FIG. 4 as a resin material so that the upper surface 4a1 of the horizontal portion 4a of the external terminal 4 after the first bending and the lower surface 1b of the base member 1 are exposed to the outside of the resin portion 5. It is the figure which showed the 2nd assembly 10 obtained by sealing by shape | molding. Specifically, FIG. 5 (A) is a plan view of the second assembly 10, FIG. 5 (B) is a front view of the second assembly 10, and FIG. 5 (C) is a right side view of the second assembly 10. FIG. 5D is a schematic vertical sectional view taken along the line DD in FIG.

図６〜図９は図５に示す第２組立体１０に対して行われる外部端子４の第２曲げ加工を説明するための図である。詳細には、図６は外部端子４の第２曲げ加工の一部を構成する第１サブ曲げ加工を説明するための図である。図７は外部端子４の第２曲げ加工の一部を構成する第２サブ曲げ加工を説明するための図である。図８は外部端子４の第２曲げ加工の一部を構成する第３サブ曲げ加工を説明するための図である。図９は外部端子４の第２曲げ加工の一部を構成する第４サブ曲げ加工を説明するための図である。図１０は第１の実施形態の樹脂封止型パワー半導体モジュール１００の等価回路図である。   6-9 is a figure for demonstrating the 2nd bending process of the external terminal 4 performed with respect to the 2nd assembly 10 shown in FIG. Specifically, FIG. 6 is a diagram for explaining a first sub-bending process that constitutes a part of the second bending process of the external terminal 4. FIG. 7 is a diagram for explaining the second sub-bending process that constitutes a part of the second bending process of the external terminal 4. FIG. 8 is a diagram for explaining a third sub-bending process that constitutes a part of the second bending process of the external terminal 4. FIG. 9 is a diagram for explaining a fourth sub bending process that constitutes a part of the second bending process of the external terminal 4. FIG. 10 is an equivalent circuit diagram of the resin-encapsulated power semiconductor module 100 of the first embodiment.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１および図２に示すように、例えばダイオードなどのようなパワー半導体素子２と、外部端子４と、ベース部材１と、電極板３ａ，３ｂとが設けられている。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIGS. 1 and 2, for example, a power semiconductor element 2 such as a diode, an external terminal 4, a base member 1, and an electrode plate 3a and 3b are provided.

詳細には、第１の実施形態の樹脂封止型パワー半導体モジュール１００の製造時には、板状の部材（図示せず）に対して第１曲げ加工などが行われ、図３に示すような第１曲げ加工後の外部端子４が形成される。具体的には、図３に示すように、外部端子４の第１曲げ加工によって、水平部分４ａと、鉛直部分４ｂと、水平部分４ｃと、水平部分４ａと鉛直部分４ｂとの間の屈曲した接続部分４ｄと、水平部分４ｃと鉛直部分４ｂとの間の屈曲した接続部分４ｅとが、外部端子４に形成される。詳細には、図３に示すように、第１曲げ加工後の外部端子４の水平部分４ａと鉛直部分４ｂと水平部分４ｃとによって概略Ｌ字状のＬ字部分４Ｌが構成されている。更に、第１曲げ加工後の外部端子４の水平部分４ａが鉛直部分４ｂの後側面４ｂ２よりも後側（図３（Ｃ）および図３（Ｄ）の右側）に配置され、第１曲げ加工後の外部端子４の水平部分４ｃが鉛直部分４ｂの前側面４ｂ１よりも前側（図３（Ｃ）および図３（Ｄ）の左側）に配置されている。また、第１曲げ加工後の外部端子４の水平部分４ａには、ねじ穴４ａ３が形成されている。   Specifically, when the resin-encapsulated power semiconductor module 100 of the first embodiment is manufactured, a first bending process or the like is performed on a plate-like member (not shown), and the first as shown in FIG. The external terminal 4 after one bending process is formed. Specifically, as shown in FIG. 3, the first bending of the external terminal 4 causes the horizontal portion 4a, the vertical portion 4b, the horizontal portion 4c, and the horizontal portion 4a and the vertical portion 4b to be bent. A connection portion 4d and a bent connection portion 4e between the horizontal portion 4c and the vertical portion 4b are formed on the external terminal 4. Specifically, as shown in FIG. 3, a substantially L-shaped L-shaped portion 4L is constituted by the horizontal portion 4a, the vertical portion 4b, and the horizontal portion 4c of the external terminal 4 after the first bending. Further, the horizontal portion 4a of the external terminal 4 after the first bending is disposed on the rear side (the right side in FIGS. 3C and 3D) with respect to the rear side surface 4b2 of the vertical portion 4b. The horizontal part 4c of the rear external terminal 4 is disposed on the front side (the left side in FIGS. 3C and 3D) of the front side surface 4b1 of the vertical part 4b. A screw hole 4a3 is formed in the horizontal portion 4a of the external terminal 4 after the first bending.

次いで、第１の実施形態の樹脂封止型パワー半導体モジュール１００の製造時には、図４に示すように、パワー半導体素子２と第１曲げ加工後の外部端子４と電極板３ａ，３ｂとがベース部材１の上面１ａに搭載され、例えば半田などの接合材によってそれらが相互に接合され、その結果、図４に示すような第１組立体が形成される。詳細には、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図４に示すように、電極板３ａの熱膨張係数が、ベース部材１の熱膨張係数とパワー半導体素子２の熱膨張係数との間の値に設定されている。また、電極板３ｂの熱膨張係数が、パワー半導体素子２の熱膨張係数と外部端子４の熱膨張係数との間の値に設定されている。更に、ねじ穴１ｃがベース部材１に形成されている。また、樹脂部５（図１および図２参照）とベース部材１との密着性を向上させるための切り欠き部１ｄが、ベース部材１に形成されている。   Next, when manufacturing the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIG. 4, the power semiconductor element 2, the external terminal 4 after the first bending process, and the electrode plates 3a and 3b are used as a base. The first assembly is mounted on the upper surface 1a of the member 1 and bonded to each other by a bonding material such as solder. As a result, a first assembly as shown in FIG. 4 is formed. Specifically, in the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIG. 4, the thermal expansion coefficient of the electrode plate 3 a is equal to the thermal expansion coefficient of the base member 1 and the heat of the power semiconductor element 2. It is set to a value between the expansion coefficient. Further, the thermal expansion coefficient of the electrode plate 3 b is set to a value between the thermal expansion coefficient of the power semiconductor element 2 and the thermal expansion coefficient of the external terminal 4. Further, a screw hole 1 c is formed in the base member 1. Further, a cutout portion 1 d for improving the adhesion between the resin portion 5 (see FIGS. 1 and 2) and the base member 1 is formed in the base member 1.

次いで、第１の実施形態の樹脂封止型パワー半導体モジュール１００の製造時には、図５に示すように、第１曲げ加工後の外部端子４の水平部分４ａの上面４ａ１、ベース部材１の下面１ｂなどが樹脂部５の外部に露出するように、例えばトランスファー成形などのような樹脂材料の成形によって、パワー半導体素子２と第１曲げ加工後の外部端子４とベース部材１と電極板３ａ，３ｂとが封止され、その結果、図５に示すような第２組立体１０が形成される。具体的には、図５に示すように、樹脂材料の成形によって、上面５ａと前側面５ｂと後側面５ｃと右側面５ｄと左側面５ｅと下面５ｆとが、樹脂部５に形成される。また、最も上側（図５（Ｂ）、図５（Ｃ）および図５（Ｄ）の上側）に位置する部分５ａ１と、２番目に上側に位置する部分５ａ２と、最も下側（図５（Ｂ）、図５（Ｃ）および図５（Ｄ）の下側）に位置する部分５ａ３（図５（Ｄ）参照）とが、樹脂部５の上面５ａに形成される。詳細には、樹脂部５の上面５ａの部分５ａ３（図５（Ｄ）参照）が、第１曲げ加工後の外部端子４の水平部分４ａの下面４ａ２（図５（Ｄ）参照）によって形成される。更に、ナット挿入穴５ａ１ａが樹脂部５の上面５ａの部分５ａ１に形成される。   Next, when manufacturing the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIG. 5, the upper surface 4a1 of the horizontal portion 4a of the external terminal 4 after the first bending and the lower surface 1b of the base member 1 are formed. For example, the power semiconductor element 2, the external terminal 4 after the first bending process, the base member 1, and the electrode plates 3a and 3b are formed by molding a resin material such as transfer molding so that the resin part 5 is exposed to the outside. As a result, the second assembly 10 as shown in FIG. 5 is formed. Specifically, as shown in FIG. 5, an upper surface 5a, a front side surface 5b, a rear side surface 5c, a right side surface 5d, a left side surface 5e, and a lower surface 5f are formed on the resin portion 5 by molding a resin material. Further, a portion 5a1 located on the uppermost side (upper side in FIGS. 5B, 5C and 5D), a portion 5a2 located on the second upper side, and the lowermost side (FIG. 5 ( B), a portion 5a3 (see FIG. 5D) positioned on the lower side of FIG. 5C and FIG. 5D is formed on the upper surface 5a of the resin portion 5. Specifically, a portion 5a3 (see FIG. 5 (D)) of the upper surface 5a of the resin portion 5 is formed by the lower surface 4a2 (see FIG. 5 (D)) of the horizontal portion 4a of the external terminal 4 after the first bending process. The Further, a nut insertion hole 5a1a is formed in the portion 5a1 of the upper surface 5a of the resin portion 5.

次いで、第１の実施形態の樹脂封止型パワー半導体モジュール１００の製造時には、図６〜図９に示すように、外部端子４の第２曲げ加工が行われる。詳細には、まず最初に、図６に示すような外部端子４の第２曲げ加工の第１サブ曲げ加工が行われる。外部端子４の第１サブ曲げ加工では、図６（Ａ）および図６（Ｂ）に示すように、第２曲げ加工後の外部端子４の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）の下側部分４ｄ１ｂ１’（図２（Ａ）参照）になる位置に、芯金ＣＢ１の当接部ＣＢ１ａが当接せしめられ、ローラＲ１が、図６（Ａ）に示す位置から図６（Ｂ）に示す位置まで鉛直方向上向き（図６の上向き）に移動せしめられる。その結果、図６（Ａ）および図６（Ｂ）に示すように、外部端子４の水平部分４ａが、芯金ＣＢ１の当接部ＣＢ１ａ付近を曲げ中心にして例えば約７０〜８０°曲げられる。   Next, when the resin-encapsulated power semiconductor module 100 of the first embodiment is manufactured, the second bending of the external terminals 4 is performed as shown in FIGS. Specifically, first, the first sub bending process of the second bending process of the external terminal 4 as shown in FIG. 6 is performed. In the first sub bending process of the external terminal 4, as shown in FIGS. 6A and 6B, the upper part 4d1 of the connection part 4d ′ (see FIG. 2) of the external terminal 4 after the second bending process. A contact portion of the core metal CB1 at a position that becomes a lower portion 4d1b1 ′ (see FIG. 2A) of the concave surface 4d1b ′ (see FIG. 2) on the front side (left side of FIG. 2) of “(see FIG. 2)” CB1a is brought into contact, and roller R1 is moved vertically upward (upward in FIG. 6) from the position shown in FIG. 6 (A) to the position shown in FIG. 6 (B). As a result, as shown in FIGS. 6A and 6B, the horizontal portion 4a of the external terminal 4 is bent by, for example, about 70 to 80 ° with the vicinity of the contact portion CB1a of the core metal CB1 as the bending center. .

次いで、図７に示すような外部端子４の第２曲げ加工の第２サブ曲げ加工が行われる。外部端子４の第２サブ曲げ加工では、図７（Ａ）および図７（Ｂ）に示すように、第２曲げ加工後の外部端子４の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）の上側部分４ｄ１ｂ２’（図２（Ａ）参照）になる位置に、芯金ＣＢ２の当接部ＣＢ２ａが当接せしめられ、ローラＲ２が、図７（Ａ）に示す位置から図７（Ｂ）に示す位置まで水平方向前向き（図７の左向き）に移動せしめられる。その結果、図７（Ａ）および図７（Ｂ）に示すように、外部端子４の水平部分４ａ（図６参照）が、芯金ＣＢ２の当接部ＣＢ２ａ付近を曲げ中心にして例えば約５０〜６０°曲げられる。詳細には、第１の実施形態の樹脂封止型パワー半導体モジュール１００の製造時には、樹脂部５（図５参照）が形成されてから図７に示すような外部端子４の第２曲げ加工の第２サブ曲げ加工が開始されるまでの間に、樹脂部５の（図５参照）上面５ａ（図５参照）のナット挿入穴５ａ１ａ（図５参照）にナットＮ（図７参照）が挿入される。   Next, the second sub bending process of the second bending process of the external terminal 4 as shown in FIG. 7 is performed. In the second sub bending of the external terminal 4, as shown in FIGS. 7A and 7B, the upper portion 4d1 of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 after the second bending is performed. The contact portion CB2a of the cored bar CB2 at a position that becomes the upper portion 4d1b2 ′ (see FIG. 2A) of the concave surface 4d1b ′ (see FIG. 2) on the front side (left side of FIG. 2) of “(see FIG. 2)” Are brought into contact with each other, and the roller R2 is moved forward in the horizontal direction (leftward in FIG. 7) from the position shown in FIG. 7 (A) to the position shown in FIG. 7 (B). As a result, as shown in FIGS. 7A and 7B, the horizontal portion 4a (see FIG. 6) of the external terminal 4 is, for example, about 50 with the vicinity of the contact portion CB2a of the core metal CB2 being bent. It is bent ~ 60 °. Specifically, when the resin-encapsulated power semiconductor module 100 of the first embodiment is manufactured, the second bending process of the external terminal 4 as shown in FIG. 7 is performed after the resin portion 5 (see FIG. 5) is formed. Until the second sub bending process is started, the nut N (see FIG. 7) is inserted into the nut insertion hole 5a1a (see FIG. 5) on the upper surface 5a (see FIG. 5) of the resin portion 5 (see FIG. 5). Is done.

次いで、図８に示すような外部端子４の第２曲げ加工の第３サブ曲げ加工が行われる。外部端子４の第３サブ曲げ加工では、図８（Ａ）および図８（Ｂ）に示すように、第２曲げ加工後の外部端子４の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）の下側部分４ｄ１ｂ１’（図２（Ａ）参照）と上側部分４ｄ１ｂ２’（図２（Ａ）参照）との間の中間部分４ｄ１ｂ３’（図２（Ａ）参照）になる位置に、芯金ＣＢ３の当接部ＣＢ３ａが当接せしめられ、ローラＲ３が、図８（Ａ）に示す位置から図８（Ｂ）に示す位置まで水平方向前向き（図８の左向き）に移動せしめられる。その結果、図８（Ａ）および図８（Ｂ）に示すように、外部端子４の水平部分４ａ（図６参照）が、芯金ＣＢ３の当接部ＣＢ３ａ付近を曲げ中心にして例えば約４０〜５０°曲げられる。   Next, a third sub bending process of the second bending process of the external terminal 4 as shown in FIG. 8 is performed. In the third sub bending process of the external terminal 4, as shown in FIGS. 8A and 8B, the upper part 4d1 of the connection part 4d ′ (see FIG. 2) of the external terminal 4 after the second bending process. The lower portion 4d1b1 ′ (see FIG. 2A) and the upper portion 4d1b2 ′ (see FIG. 2A) of the concave surface 4d1b ′ (see FIG. 2) on the front side (left side of FIG. 2) of “(see FIG. 2)” ), The contact portion CB3a of the cored bar CB3 is brought into contact with the intermediate portion 4d1b3 ′ (see FIG. 2A), and the roller R3 is viewed from the position shown in FIG. 8A. 8B is moved forward in the horizontal direction (leftward in FIG. 8). As a result, as shown in FIGS. 8A and 8B, the horizontal portion 4a (see FIG. 6) of the external terminal 4 is, for example, about 40 around the contact portion CB3a of the core metal CB3. ~ 50 ° bent.

次いで、図９に示すような外部端子４の第２曲げ加工の第４サブ曲げ加工が行われる。外部端子４の第４サブ曲げ加工では、図９（Ａ）および図９（Ｂ）に示すように、第２曲げ加工後の外部端子４の水平部分４ａ’（図９（Ｂ）参照）の上面４ａ１’（図９（Ｂ）参照）になる位置に、押し当て部材ＰＳの下面ＰＳ１が当接せしめられ、押し当て部材ＰＳが、図９（Ａ）に示す位置から図９（Ｂ）に示す位置まで鉛直方向下向き（図９の下向き）に移動せしめられる。その結果、図９（Ａ）および図９（Ｂ）に示すように、外部端子４の水平部分４ａ（図６参照）が、第２曲げ加工後の外部端子４の接続部分４ｄ’（図９（Ｂ）参照）付近を曲げ中心にして例えば約１０°曲げられる。   Next, a fourth sub bending process of the second bending process of the external terminal 4 as shown in FIG. 9 is performed. In the fourth sub bending of the external terminal 4, as shown in FIGS. 9A and 9B, the horizontal portion 4a ′ of the external terminal 4 after the second bending is processed (see FIG. 9B). The lower surface PS1 of the pressing member PS is brought into contact with the upper surface 4a1 ′ (see FIG. 9B), and the pressing member PS is moved from the position shown in FIG. 9A to FIG. 9B. It is moved vertically downward (downward in FIG. 9) to the position shown. As a result, as shown in FIGS. 9A and 9B, the horizontal portion 4a (see FIG. 6) of the external terminal 4 is connected to the connection portion 4d ′ (FIG. 9) of the external terminal 4 after the second bending process. For example, it is bent about 10 ° with the vicinity being the center of bending.

厳密には、外部端子４の第４サブ曲げ加工では、押し当て部材ＰＳの傾斜している下面ＰＳ１と第２曲げ加工後の外部端子４の水平部分４ａ’の上面４ａ１’とが面接触するまで、押し当て部材ＰＳが、図９（Ｂ）に示す位置よりも更に下側（図９の下側）に移動せしめられる。次いで、外部端子４の第４サブ曲げ加工後に、スプリングバックによって、第２曲げ加工後の外部端子４の水平部分４ａ’が図１および図２に示す位置まで戻り、第１の実施形態の樹脂封止型パワー半導体モジュール１００（図１および図２参照）が完成する。   Strictly speaking, in the fourth sub-bending process of the external terminal 4, the inclined lower surface PS1 of the pressing member PS and the upper surface 4a1 ′ of the horizontal portion 4a ′ of the external terminal 4 after the second bending process are in surface contact. Until then, the pressing member PS is moved further downward (lower side in FIG. 9) than the position shown in FIG. 9 (B). Next, after the fourth sub-bending of the external terminal 4, the horizontal portion 4a ′ of the external terminal 4 after the second bending is returned to the position shown in FIGS. 1 and 2 by the spring back, and the resin of the first embodiment The sealed power semiconductor module 100 (see FIGS. 1 and 2) is completed.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１、図２および図１０に示すように、ベース部材１によってパワー半導体素子（ダイオード）２のアノード端子が構成されている。また、外部端子４の水平部分４ａ’によってパワー半導体素子（ダイオード）２のカソード端子が構成されている。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, the anode member of the power semiconductor element (diode) 2 is configured by the base member 1 as shown in FIGS. 1, 2, and 10. Further, the horizontal portion 4 a ′ of the external terminal 4 constitutes the cathode terminal of the power semiconductor element (diode) 2.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１、図２および図１０に示すように、ベース部材１によってパワー半導体素子（ダイオード）２のアノード端子が構成されているが、第２の実施形態の樹脂封止型パワー半導体モジュール１００では、代わりに、アノード端子として機能する他の外部端子をベース部材１の上面１ａに搭載し、他の外部端子に対して外部端子４と同様の曲げ加工を行うことも可能である。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, the anode member of the power semiconductor element (diode) 2 is configured by the base member 1 as shown in FIGS. 1, 2, and 10. In the resin-encapsulated power semiconductor module 100 of the second embodiment, instead, another external terminal that functions as an anode terminal is mounted on the upper surface 1a of the base member 1, and the external terminal 4 is connected to the other external terminal. A similar bending process can also be performed.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１、図２および図１０に示すように、ベース部材１によってパワー半導体素子（ダイオード）２のアノード端子が構成され、外部端子４の水平部分４ａ’によってパワー半導体素子（ダイオード）２のカソード端子が構成されているが、第３の実施形態の樹脂封止型パワー半導体モジュール１００では、代わりに、ベース部材１あるいは他の外部端子によってパワー半導体素子（ダイオード）２のカソード端子を構成し、外部端子４の水平部分４ａ’によってパワー半導体素子（ダイオード）２のアノード端子を構成することも可能である。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIGS. 1, 2, and 10, the anode member of the power semiconductor element (diode) 2 is configured by the base member 1, and the external terminal 4 Although the cathode terminal of the power semiconductor element (diode) 2 is configured by the horizontal portion 4a ′, in the resin-encapsulated power semiconductor module 100 of the third embodiment, the base member 1 or other external terminal is used instead. It is also possible to constitute the cathode terminal of the power semiconductor element (diode) 2 and to constitute the anode terminal of the power semiconductor element (diode) 2 by the horizontal portion 4 a ′ of the external terminal 4.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、パワー半導体素子２としてダイオードが用いられているが、第４の実施形態の樹脂封止型パワー半導体モジュール１００では、代わりに、パワー半導体素子として、ダイオード以外の任意のパワー半導体素子を用いたり、あるいは、パワー半導体素子としてダイオードとダイオード以外の任意のパワー半導体素子とを併用したり、複数のダイオード以外の任意のパワー半導体素子を用いたりすることも可能である。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, a diode is used as the power semiconductor element 2, but in the resin-encapsulated power semiconductor module 100 of the fourth embodiment, instead, a power semiconductor is used. As an element, any power semiconductor element other than a diode is used, or as a power semiconductor element, a diode and any power semiconductor element other than a diode are used together, or any power semiconductor element other than a plurality of diodes is used. It is also possible to do.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１および図２に示すように、ベース部材１が板状に形成され、ベース部材１の下面１ｂが樹脂部５の外部に露出せしめられているが、第５の実施形態の樹脂封止型パワー半導体モジュール１００では、代わりに、ベース部材と一体的にフィンを形成し、そのフィンを樹脂部５の外部に露出させることも可能である。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIGS. 1 and 2, the base member 1 is formed in a plate shape, and the lower surface 1 b of the base member 1 is exposed to the outside of the resin portion 5. However, in the resin-encapsulated power semiconductor module 100 according to the fifth embodiment, instead of forming a fin integrally with the base member, the fin can be exposed to the outside of the resin portion 5. It is.

第１の実施形態の樹脂封止型パワー半導体モジュール１００では、図１、図２および図５に示すように、樹脂部５とベース部材１との密着性を向上させるための切り欠き部１ｄ（図４参照）がベース部材１に形成されているが、第６の実施形態の樹脂封止型パワー半導体モジュール１００では、切り欠き部１ｄ（図４参照）に加えて、あるいは、切り欠き部１ｄ（図４参照）の代わりに、密着性向上用または水分浸入抑制用の切り欠き部、張り出し部、溝部などをベース部材１に形成することも可能である。   In the resin-encapsulated power semiconductor module 100 of the first embodiment, as shown in FIGS. 1, 2 and 5, a notch 1 d (for improving the adhesion between the resin part 5 and the base member 1 ( 4) is formed on the base member 1. In the resin-encapsulated power semiconductor module 100 of the sixth embodiment, in addition to the notch portion 1d (see FIG. 4), or the notch portion 1d. Instead of (see FIG. 4), it is possible to form notches, overhangs, grooves, etc. in the base member 1 for improving adhesion or suppressing moisture intrusion.

換言すれば、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第１曲げ加工後の外部端子４（図３参照）の水平部分４ａ（図３参照）の上面４ａ１（図３参照）が、第２曲げ加工後の外部端子４（図２参照）の水平部分４ａ’（図２参照）の下面４ａ２’（図２参照）になり、かつ、第１曲げ加工後の外部端子４（図３参照）の水平部分４ａ（図３参照）の下面４ａ２（図３参照）が、第２曲げ加工後の外部端子４（図２参照）の水平部分４ａ’（図２参照）の上面４ａ１’（図２参照）になるように、外部端子４の第２曲げ加工が行われている。   In other words, in the resin-encapsulated power semiconductor module 100 of the first embodiment, the upper surface 4a1 (see FIG. 3) of the horizontal portion 4a (see FIG. 3) of the external terminal 4 (see FIG. 3) after the first bending process. ) Becomes the lower surface 4a2 ′ (see FIG. 2) of the horizontal portion 4a ′ (see FIG. 2) of the external terminal 4 after the second bending process (see FIG. 2), and the external terminal 4 after the first bending process. The lower surface 4a2 (see FIG. 3) of the horizontal portion 4a (see FIG. 3) of the (see FIG. 3) is the upper surface of the horizontal portion 4a ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. The second bending of the external terminal 4 is performed so as to be 4a1 ′ (see FIG. 2).

また、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、外部端子４（図２参照）の第２曲げ加工により、鉛直部分４ｂ（図２参照）と水平部分４ａ’（図２参照）とそれらの間の屈曲した接続部分４ｄ’（図２参照）とを有する概略Ｌ字状のＬ字部分４Ｌ’（図２（Ｂ）参照）であって、水平部分４ａ’（図２参照）が鉛直部分４ｂ（図２参照）の前側（図２の左側）に位置する概略Ｌ字状のＬ字部分４Ｌ’（図２（Ｂ）参照）が外部端子４（図２参照）に形成されている。   Further, in the resin-encapsulated power semiconductor module 100 of the first embodiment, the vertical portion 4b (see FIG. 2) and the horizontal portion 4a ′ (see FIG. 2) are obtained by the second bending process of the external terminal 4 (see FIG. 2). ) And a bent connecting portion 4d ′ (see FIG. 2) between them, a substantially L-shaped portion 4L ′ (see FIG. 2B), and a horizontal portion 4a ′ (see FIG. 2) ) Is formed on the external terminal 4 (see FIG. 2) as a generally L-shaped L-shaped portion 4L ′ (see FIG. 2B) positioned on the front side (left side in FIG. 2) of the vertical portion 4b (see FIG. 2). Has been.

詳細には、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第１曲げ加工後の外部端子４（図３参照）の鉛直部分４ｂ（図３参照）の形状と、第２曲げ加工後の外部端子４（図２参照）の鉛直部分４ｂ（図２参照）の形状とが概略一致している。また、第１曲げ加工後の外部端子４（図３参照）の水平部分４ａ（図３参照）の先端側部分４ａ−１（図３（Ｄ）参照）が、第２曲げ加工後の外部端子４（図２参照）の水平部分４ａ’（図２参照）になり、かつ、第１曲げ加工後の外部端子４（図３参照）の水平部分４ａ（図３参照）の根元側部分４ａ−２（図３（Ｄ）参照）と、第１曲げ加工後の外部端子４（図３参照）の接続部分４ｄ（図３参照）とが、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）になり、かつ、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の後側（図２の右側）の凸状面４ｄ１ａ’（図２（Ａ）参照）の頂部４ｄ１ａ１’（図２（Ａ）参照）が、鉛直部分４ｂ（図２参照）の後側面４ｂ２（図２参照）よりも後側（図２の右側）に位置するように、外部端子４（図２参照）の第２曲げ加工が行われている。   Specifically, in the resin-encapsulated power semiconductor module 100 of the first embodiment, the shape of the vertical portion 4b (see FIG. 3) of the external terminal 4 (see FIG. 3) after the first bending process and the second bending. The shape of the vertical portion 4b (see FIG. 2) of the external terminal 4 (see FIG. 2) after processing is approximately the same. Further, the distal end portion 4a-1 (see FIG. 3D) of the horizontal portion 4a (see FIG. 3) of the external terminal 4 after the first bending (see FIG. 3) is the external terminal after the second bending. 4 (see FIG. 2) of the horizontal portion 4a ′ (see FIG. 2) and the base side portion 4a− of the horizontal portion 4a (see FIG. 3) of the external terminal 4 (see FIG. 3) after the first bending process. 2 (see FIG. 3D) and the connection portion 4d (see FIG. 3) of the external terminal 4 after the first bending (see FIG. 3) are the external terminals 4 after the second bending (see FIG. 2). ) Of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 after the second bending process (see FIG. 2) and the rear side (right side of FIG. 2) of the connection portion 4d ′ (see FIG. 2). The top 4d1a1 ′ (see FIG. 2A) of the convex surface 4d1a ′ (see FIG. 2A) is more than the rear side surface 4b2 (see FIG. 2) of the vertical portion 4b (see FIG. 2). So as to be located on the side (right side in FIG. 2), a second bending of the external terminal 4 (see FIG. 2) is performed.

すなわち、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第１曲げ加工時に曲げ加工負荷がかかった第１曲げ加工後の外部端子４（図３参照）の接続部分４ｄ（図３参照）の位置だけでなく、第１曲げ加工時に曲げ加工負荷が殆どかかっていない第１曲げ加工後の外部端子４（図２参照）の水平部分４ａ（図２参照）の根元側部分４ａ−２（図２（Ｄ）参照）の位置にも、第２曲げ加工時に、曲げ加工負荷が分散してかけられている。   That is, in the resin-encapsulated power semiconductor module 100 of the first embodiment, the connecting portion 4d (see FIG. 3) of the external terminal 4 (see FIG. 3) after the first bending, which is subjected to a bending load during the first bending. 2) of the horizontal portion 4a (see FIG. 2) of the external terminal 4 (see FIG. 2) after the first bending, in which the bending load is hardly applied at the time of the first bending. 2 (see FIG. 2D), the bending load is applied in a distributed manner during the second bending.

そのため、第１の実施形態の樹脂封止型パワー半導体モジュール１００によれば、第１曲げ加工時の曲げ加工負荷および第２曲げ加工時の曲げ加工負荷が第１曲げ加工後の外部端子４（図２参照）の接続部分４ｄ（図２参照）の位置に集中してかけられている場合よりも、第１曲げ加工後の外部端子４（図２参照）の接続部分４ｄ（図２参照）の位置が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる。   Therefore, according to the resin-encapsulated power semiconductor module 100 of the first embodiment, the bending load during the first bending process and the bending load during the second bending process are the external terminals 4 after the first bending process ( The connection portion 4d (see FIG. 2) of the external terminal 4 (see FIG. 2) after the first bending is performed, rather than the case where it is concentrated on the position of the connection portion 4d (see FIG. 2) of FIG. The possibility that the position of may be damaged during or after the second bending process can be reduced.

また、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）が、樹脂部５（図２参照）の外部に露出せしめられている。そのため、第１の実施形態の樹脂封止型パワー半導体モジュール１００によれば、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）になる位置を、第２曲げ加工時に屈曲させることができる。   In the resin-encapsulated power semiconductor module 100 according to the first embodiment, the upper portion 4d1 ′ (FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. The concave surface 4d1b ′ (see FIG. 2) on the front side (see FIG. 2) of the reference portion is exposed to the outside of the resin portion 5 (see FIG. 2). Therefore, according to the resin-encapsulated power semiconductor module 100 of the first embodiment, the upper portion 4d1 ′ (see FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. The position of the concave surface 4d1b ′ (see FIG. 2) on the front side (left side in FIG. 2) of the front side (see FIG. 2) can be bent during the second bending process.

更に、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の下側部分４ｄ２’（図２参照）の前側（図２の左側）の凸状面４ｄ２ｂ’（図２（Ａ）参照）が樹脂部５（図２参照）によって覆われている。   Furthermore, in the resin-encapsulated power semiconductor module 100 of the first embodiment, the lower portion 4d2 ′ (see FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. 2) (see FIG. 2A) on the front side (left side in FIG. 2) of the convex surface 4d2b ′ (see FIG. 2A).

そのため、第１の実施形態の樹脂封止型パワー半導体モジュール１００によれば、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の下側部分４ｄ２’（図２参照）の前側（図２の左側）の凸状面４ｄ２ｂ’（図２（Ａ）参照）になる位置が第１曲げ加工時および第２曲げ加工時に繰り返して屈曲せしめられないように、その位置を樹脂部５（図２参照）によって保護することができる。   Therefore, according to the resin-encapsulated power semiconductor module 100 of the first embodiment, the lower portion 4d2 ′ of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. (See FIG. 2) The position of the front surface (left side of FIG. 2) convex surface 4d2b ′ (see FIG. 2A) is not repeatedly bent during the first bending process and the second bending process. The position can be protected by the resin portion 5 (see FIG. 2).

また、第１の実施形態の樹脂封止型パワー半導体モジュール１００では、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）のうち、芯金ＣＢ１（図６参照）の当接部ＣＢ１ａ（図６参照）が当接せしめられた位置と、芯金ＣＢ２（図７参照）の当接部ＣＢ２ａ（図７参照）が当接せしめられた位置と、芯金ＣＢ３（図８参照）の当接部ＣＢ３ａ（図８参照）が当接せしめられた位置とが、互いに異ならされている。   In the resin-encapsulated power semiconductor module 100 according to the first embodiment, the upper portion 4d1 ′ (FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. Of the concave surface 4d1b ′ (see FIG. 2) on the front side (see FIG. 2) of the reference), and the contact portion CB1a (see FIG. 6) of the core metal CB1 (see FIG. 6) The position where the contact portion CB2a (see FIG. 7) of the core metal CB2 (see FIG. 7) is brought into contact with the contact portion CB3a (see FIG. 8) of the core metal CB3 (see FIG. 8). The positions are different from each other.

そのため、第１の実施形態の樹脂封止型パワー半導体モジュール１００によれば、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）の前側（図２の左側）の凹状面４ｄ１ｂ’（図２参照）の同一位置に、芯金ＣＢ１（図６参照）の当接部ＣＢ１ａ（図６参照）と芯金ＣＢ２（図７参照）の当接部ＣＢ２ａ（図７参照）と芯金ＣＢ３（図８参照）の当接部ＣＢ３ａ（図８参照）とが繰り返して当接せしめられている場合よりも、第２曲げ加工後の外部端子４（図２参照）の接続部分４ｄ’（図２参照）の上側部分４ｄ１’（図２参照）が第２曲げ加工時またはその後に破損してしまうおそれを低減することができる。   Therefore, according to the resin-encapsulated power semiconductor module 100 of the first embodiment, the upper portion 4d1 ′ (see FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after the second bending process. The contact portion CB1a (see FIG. 6) of the core metal CB1 (see FIG. 6) and the core metal CB2 (see FIG. 6) are located at the same position on the concave surface 4d1b ′ (see FIG. 2) on the front side (left side of FIG. 2) of FIG. The second bending than the case where the contact portion CB2a (see FIG. 7) in FIG. 7) and the contact portion CB3a (see FIG. 8) of the cored bar CB3 (see FIG. 8) are repeatedly brought into contact with each other. The possibility that the upper portion 4d1 ′ (see FIG. 2) of the connection portion 4d ′ (see FIG. 2) of the external terminal 4 (see FIG. 2) after processing is damaged during or after the second bending process is reduced. it can.

第７の実施形態では、上述した第１から第６の実施形態を適宜組み合わせることも可能である。   In the seventh embodiment, the first to sixth embodiments described above can be appropriately combined.

１ ベース部材
１ａ 上面
１ｂ 下面
１ｃ ねじ穴
１ｄ 切り欠き部
２ パワー半導体素子
３ａ，３ｂ 電極板
４ 外部端子
４ａ，４ａ’，４ｃ 水平部分
４ａ１，４ａ１’ 上面
４ａ２，４ａ２’ 上面
４ａ３ ねじ穴
４ａ−１ 先端側部分
４ａ−２ 根元側部分
４ｂ 鉛直部分
４ｂ１ 前側面
４ｂ２ 後側面
４ｄ，４ｄ’，４ｅ 接続部分
４ｄ１’ 上側部分
４ｄ１ａ’ 凸状面
４ｄ１ａ１’ 頂部
４ｄ１ｂ’ 凹状面
４ｄ１ｂ１’ 下側部分
４ｄ１ｂ２’ 上側部分
４ｄ１ｂ３’ 中間部分
４ｄ２’ 下側部分
４ｄ２ａ’ 後側面
４ｄ２ｂ’ 凸状面
４Ｌ，４Ｌ’ Ｌ字部分
５ 樹脂部
５ａ 上面
５ａ１，５ａ２，５ａ３ 部分
５ａ１ａ ねじ穴
５ｂ，５ｃ，５ｄ，５ｅ 側面
５ｆ 下面
１０ 組立体
ＣＢ１，ＣＢ２，ＣＢ３ 芯金
ＣＢ１ａ，ＣＢ２ａ，ＣＢ３ａ 当接部
Ｎ ナット
ＰＳ 押し当て部材
ＰＳ１ 下面
Ｒ１，Ｒ２，Ｒ３ ローラ
１００ 樹脂封止型パワー半導体モジュール DESCRIPTION OF SYMBOLS 1 Base member 1a Upper surface 1b Lower surface 1c Screw hole 1d Notch part 2 Power semiconductor element 3a, 3b Electrode board 4 External terminal 4a, 4a ', 4c Horizontal part 4a1, 4a1' Upper surface 4a2, 4a2 'Upper surface 4a3 Screw hole 4a-1 Tip side portion 4a-2 Root side portion 4b Vertical portion 4b1 Front side surface 4b2 Rear side surface 4d, 4d ', 4e Connection portion 4d1' Upper portion 4d1a 'Convex surface 4d1a1' Top portion 4d1b 'Concave surface 4d1b1' Lower portion 4d1b2 'Upper side Portion 4d1b3 ′ Middle portion 4d2 ′ Lower portion 4d2a ′ Rear side surface 4d2b ′ Convex surfaces 4L, 4L ′ L-shaped portion 5 Resin portion 5a Upper surface 5a1, 5a2, 5a3 Portion 5a1a Screw holes 5b, 5c, 5d, 5e Side surface 5f Lower surface 10 Assembly CB1, CB2, CB3 Core metal CB1a, CB2a, CB3a Abutting portion N Nut PS Pressing member PS1 Lower surface 1, R2, R3 roller 100 resin-sealed power semiconductor module

Claims (2)

パワー半導体素子（２）と、板状の部材によって形成された外部端子（４）と、ベース部材（１）とを設け、
外部端子（４）の第１曲げ加工を行うことにより、鉛直部分（４ｂ）と水平部分（４ａ）とそれらの間の屈曲した接続部分（４ｄ）とを有する概略Ｌ字状のＬ字部分（４Ｌ）であって、水平部分（４ａ）が鉛直部分（４ｂ）に対して第１の側に位置する概略Ｌ字状のＬ字部分（４Ｌ）を、外部端子（４）に形成し、
少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とをベース部材（１）に搭載し、
少なくとも第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）と、ベース部材（１）の一部分とが樹脂部（５）の外部に露出するように、樹脂材料の成形によって、少なくともパワー半導体素子（２）と第１曲げ加工後の外部端子（４）とベース部材（１）とを封止し、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の上面（４ａ１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の下面（４ａ２’）になり、かつ、第１曲げ加工後の外部端子（４）の水平部分（４ａ）の下面（４ａ２）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になるように、外部端子（４）の第２曲げ加工を行い、
外部端子（４）の第２曲げ加工により、鉛直部分（４ｂ）と水平部分（４ａ’）とそれらの間の屈曲した接続部分（４ｄ’）とを有する概略Ｌ字状のＬ字部分（４Ｌ’）であって、水平部分（４ａ’）が鉛直部分（４ｂ）に対して第１の側とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分（４Ｌ’）が外部端子（４）に形成される樹脂封止型パワー半導体モジュール（１００）の製造方法において、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の先端側部分（４ａ−１）が、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）になり、かつ、
第１曲げ加工後の外部端子（４）の水平部分（４ａ）の根元側部分（４ａ−２）と、第１曲げ加工後の外部端子（４）の接続部分（４ｄ）とが、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）になり、かつ、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の第１の側の凸状面（４ｄ１ａ’）の頂部（４ｄ１ａ１’）が、鉛直部分（４ｂ）の第１の側の側面（４ｂ２）よりも第１の側に位置するように、外部端子（４）の第２曲げ加工を行い、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）を樹脂部（５）の外部に露出させ、
第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の下側部分（４ｄ２’）の第２の側の凸状面（４ｄ２ｂ’）を樹脂部（５）によって覆い、
第１サブ曲げ加工と、第２サブ曲げ加工と、第３サブ曲げ加工と、第４サブ曲げ加工とによって第２曲げ加工を構成し、
外部端子（４）の第１サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）になる位置に第１芯金（ＣＢ１）の当接部（ＣＢ１ａ）を当接させて曲げ加工を行い、
外部端子（４）の第２サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の上側部分（４ｄ１ｂ２’）になる位置に第２芯金（ＣＢ２）の当接部（ＣＢ２ａ）を当接させて曲げ加工を行い、
外部端子（４）の第３サブ曲げ加工では、第２曲げ加工後の外部端子（４）の接続部分（４ｄ’）の上側部分（４ｄ１’）の第２の側の凹状面（４ｄ１ｂ’）の下側部分（４ｄ１ｂ１’）と上側部分（４ｄ１ｂ２’）との間の中間部分（４ｄ１ｂ３’）になる位置に第３芯金（ＣＢ３）の当接部（ＣＢ３ａ）を当接させて曲げ加工を行い、
外部端子（４）の第４サブ曲げ加工では、芯金を用いることなく、第２曲げ加工後の外部端子（４）の水平部分（４ａ’）の上面（４ａ１’）になる位置を押し当て部材（ＰＳ）の下面（ＰＳ１）によって下向きに押圧することにより曲げ加工を行うことを特徴とする樹脂封止型パワー半導体モジュール（１００）の製造方法。 A power semiconductor element (2), an external terminal (4) formed of a plate-like member, and a base member (1);
By performing the first bending process of the external terminal (4), a substantially L-shaped L-shaped portion (having a vertical portion (4b), a horizontal portion (4a), and a bent connection portion (4d) therebetween ( 4L), the horizontal portion (4a) is formed on the external terminal (4) with a substantially L-shaped portion (4L) having a substantially L shape located on the first side with respect to the vertical portion (4b),
At least the power semiconductor element (2) and the external terminal (4) after the first bending are mounted on the base member (1),
At least the upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending process and a part of the base member (1) are exposed to the outside of the resin part (5). By molding, at least the power semiconductor element (2), the external terminal (4) after the first bending process, and the base member (1) are sealed,
The upper surface (4a1) of the horizontal portion (4a) of the external terminal (4) after the first bending process becomes the lower surface (4a2 ') of the horizontal part (4a ′) of the external terminal (4) after the second bending process. And the lower surface (4a2) of the horizontal part (4a) of the external terminal (4) after the first bending process is the upper surface (4a1 ') of the horizontal part (4a') of the external terminal (4) after the second bending process. The second bending of the external terminal (4) is performed so that
Due to the second bending of the external terminal (4), a substantially L-shaped portion (4L) having a vertical portion (4b), a horizontal portion (4a ′), and a bent connection portion (4d ′) therebetween. '), And the horizontal portion (4a') is located on the second side opposite to the first side with respect to the vertical portion (4b). In the method for manufacturing the resin-encapsulated power semiconductor module (100) formed on the external terminal (4),
The front end side part (4a-1) of the horizontal part (4a) of the external terminal (4) after the first bending process becomes the horizontal part (4a ') of the external terminal (4) after the second bending process, and ,
The base part (4a-2) of the horizontal part (4a) of the external terminal (4) after the first bending process and the connection part (4d) of the external terminal (4) after the first bending process are the second. It becomes a connection part (4d ′) of the external terminal (4) after bending, and
The top portion (4d1a1 ′) of the convex surface (4d1a ′) on the first side of the connection portion (4d ′) of the external terminal (4) after the second bending is formed on the first side of the vertical portion (4b). side (4b2) to be located on a first side than, have a second bending line processing of external terminals (4),
A second concave surface (4d1b ′) of the upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending is exposed to the outside of the resin part (5);
The convex portion (4d2b ′) on the second side of the lower portion (4d2 ′) of the connection portion (4d ′) of the external terminal (4) after the second bending is covered with the resin portion (5),
A second bending process is configured by the first sub bending process, the second sub bending process, the third sub bending process, and the fourth sub bending process,
In the first sub bending of the external terminal (4), the concave surface (4d1b ′) on the second side of the upper part (4d1 ′) of the connection part (4d ′) of the external terminal (4) after the second bending process. Bending the contact portion (CB1a) of the first cored bar (CB1) at the position to become the lower portion (4d1b1 ′),
In the second sub bending process of the external terminal (4), the concave surface (4d1b ') on the second side of the upper part (4d1') of the connection part (4d ') of the external terminal (4) after the second bending process. The second cored bar (CB2) is brought into contact with the upper part (4d1b2 ′) of the second metal core (CB2a) and bent,
In the third sub-bending process of the external terminal (4), the concave surface (4d1b ') on the second side of the upper part (4d1') of the connection part (4d ') of the external terminal (4) after the second bending process. Bending by contacting the contact portion (CB3a) of the third cored bar (CB3) at a position that becomes the intermediate portion (4d1b3 ') between the lower portion (4d1b1') and the upper portion (4d1b2 ') And
In the fourth sub-bending process of the external terminal (4), the position that becomes the upper surface (4a1 ′) of the horizontal portion (4a ′) of the external terminal (4) after the second bending process is pressed without using a cored bar. method for producing a member resin-sealed power semiconductor module, wherein the line Ukoto bending by pressing downward by the lower surface (PS1) of the (PS) (100). パワー半導体素子（２）と、板状の部材によって形成された外部端子（４）と、ベース部材（１）とを有し、A power semiconductor element (2), an external terminal (4) formed of a plate-like member, and a base member (1);
少なくともパワー半導体素子（２）と外部端子（４）とがベース部材（１）に搭載され、At least the power semiconductor element (2) and the external terminal (4) are mounted on the base member (1),
外部端子（４）は、鉛直部分（４ｂ）と水平部分（４ａ’）とそれらの間の屈曲した接続部分（４ｄ’）とを有する概略Ｌ字状のＬ字部分（４Ｌ’）であって、水平部分（４ａ’）が鉛直部分（４ｂ）に対して鉛直部分（４ｂ）の第１の側の側面（４ｂ２）とは反対側の第２の側に位置する概略Ｌ字状のＬ字部分（４Ｌ’）を備える樹脂封止型パワー半導体モジュール（１００）において、The external terminal (4) is a substantially L-shaped portion (4L ′) having a vertical portion (4b), a horizontal portion (4a ′), and a bent connection portion (4d ′) between them. The horizontal portion (4a ′) is located on the second side opposite to the first side surface (4b2) of the vertical portion (4b) with respect to the vertical portion (4b). In the resin-encapsulated power semiconductor module (100) including the portion (4L ′),
外部端子（４）の接続部分（４ｄ’）は、その第１の側の凸状面（４ｄ１ａ’）に頂部（４ｄ１ａ１’）を備えた曲線形状であり、第１の側の凸状面（４ｄ１ａ’）の頂部（４ｄ１ａ１’）が、鉛直部分（４ｂ）の第１の側の側面（４ｂ２）よりも第１の側に位置するThe connection portion (4d ′) of the external terminal (4) has a curved shape with a top portion (4d1a1 ′) on the convex surface (4d1a ′) on the first side, and the convex surface on the first side ( 4d1a ′) is located on the first side with respect to the first side surface (4b2) of the vertical portion (4b).
樹脂封止型パワー半導体モジュール（１００）。Resin-encapsulated power semiconductor module (100).
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