JP2010062236A - Electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component for suppressing failures, such as disconnection or the like caused by thermal stress at a connection part that is often generated in a conventional solder bump connection, in a connection between a semiconductor package which mounts a semiconductor chip and a wiring substrate, and of enhancing connection reliability of the connection part that electrically connects between electrodes of a connection surface. <P>SOLUTION: In a connection between a semiconductor package 3 on which a semiconductor chip 3-1 is mounted and a wiring substrate, the connection part includes a stress relaxation part 5 in which a plastic body material layer and a metal layer are alternately laminated without using a solder bump, and a conductor line 6 penetrating the stress relaxation part. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electronic component, and further relates to an electronic component in which a package substrate on which a semiconductor chip is mounted and a wiring substrate on which the package substrate is mounted are electrically connected via a connecting portion. .

  Semiconductor packages such as BGA (Ball Grid Array) and CSP (Chip Size Package) or Chip Scale Package (BGA) that were developed to meet the demands for smaller and lighter electronic devices are equipped with multilayer printed wiring. Conventionally, solder bumps have been used as connection portions for electrical connection with a wiring board. Solder bumps are arranged in an array to reduce the mounting area and achieve high-density mounting.

  In the semiconductor package as described above, a semiconductor chip is mounted on a package substrate such as a printed circuit board or a build-up substrate. However, the amount of heat generated is greatly increased due to an increase in power consumption due to higher performance and larger size of the semiconductor chip. Has come to increase. Since the semiconductor chip has a larger elastic modulus than the package substrate, there is a problem that the package substrate is warped due to thermal stress.

  Furthermore, when this semiconductor package is mounted on a wiring board such as multilayer printed wiring via solder bumps, the linear expansion coefficients of the component materials of the semiconductor package and the wiring board are mutually reduced during mounting or operation of this semiconductor device. Distortions and stresses resulting from the difference are repeatedly concentrated on the solder bumps of the connection part. As a result, cracks occur in the solder bumps, causing problems such as breakage of the connection between the electrical and mechanical chip and the substrate.

In order to prevent such fatigue breakage in the solder bump, for example, as a countermeasure in the wiring board, a multilayer wiring board composed of a resin having a high elastic modulus provided with a core part reinforced with a glass cloth at the center of the printed board Has been proposed. On the other hand, as a countermeasure in the solder bump itself, for example, the connected solder bump shape has an obtuse shape such that each connection between the electrode pad of the wiring board and the solder bump has an obtuse angle (the center portion is constricted like a pinch) A method of dispersing the stress and strain applied to the solder connection portion by considering the shape is considered.
JP 11-274682 A Japanese Patent Laid-Open No. 2004-87856

  However, even the above-mentioned proposals are not sufficient countermeasures. Therefore, the multilayer wiring board having the core portion has a relatively high rigidity. However, warpage and distortion of the multilayer wiring board and package board due to differences in wiring density of each wiring layer and thermal stress generated by differences in thermal expansion coefficient between each wiring layer and each build-up insulating layer and the semiconductor package. It is very difficult to completely suppress this. As a result, stress is also applied to the solder bumps in the electrical connection portion, and a reduction in reliability due to the occurrence of fatigue failure of the electrode bumps cannot be avoided. Further, the method of increasing the rigidity by increasing the thickness of the core part is accompanied by an increase in the thickness of the wiring board, which hinders the downsizing of the electronic equipment to be mounted and is not desirable.

FIGS. 8 and 9 are diagrams for examining deformation caused by the occurrence of distortion, which is caused by the difference in the shape of the connection solder bumps (the difference between the so-called drum type and the drum type). FIG. 8 is a schematic cross-sectional view of the electronic component 100 on which a drum-type solder bump is formed. FIG. 8 (1) shows a state during formation, and FIG. 8 (2) shows a state when the solder bump is deformed due to strain. In FIG. 8A, the electrode 102 is formed on the connection surface (connection surface) of the wiring substrate 101, while the semiconductor chip 103-1 is mounted on the package substrate 103-2. An electrode 104 is formed on the surface (connection surface). A drum-type solder bump 105 is formed between the electrodes facing each other. As shown in the drawing, the contact angle R1 between the solder bump 105 and the electrode 103 is an acute angle, and is usually connected and formed by solder reflow or the like. This solder bump shape is this shape.

  In this case, the bump is deformed as shown in FIG. The contact angle R1 between the solder bump 105 and the electrode 102 is further sharpened by deformation (lateral dimension deviation L1), and when it breaks at the boundary between the electrode 102 and the solder bump 105, it becomes a starting point for generating a crack. Cheap.

  FIG. 9A is a schematic cross-sectional view of the electronic component 100 on which the drum-shaped solder bumps are formed. FIG. 9A is a state during formation, and FIG. . A drum-shaped solder bump 106 is formed between the electrode 102 and the electrode 104. As shown in the figure, the contact angle R2 between the solder bump 106 and the electrode 102 is an acute angle. In this case, the bump is deformed by the distortion as shown in FIG. The contact angle R2 between the solder bump 106 and the electrode 102 is an obtuse angle, and the contact angle R2 is further obtuse due to deformation (lateral dimension shift L2). Regarding the case where the solder bump 106 breaks, it is considered that the boundary between the bump and the electrode, which is the main starting point of a crack, is relatively high in strength, and the fracture resistance of the bump is larger than that of the drum-type solder bump.

  However, there is a manufacturing problem in connecting the semiconductor package and the wiring board by forming the drum-shaped solder bump. As described above, solder mounting in a general reflow furnace results in a drum shape, so a standoff (height control board, etc.) is used to make a solder bump into a drum shape, and the solder amount and bump height It is necessary to adjust and manufacture. Further, for this reason, there is a manufacturing disadvantage that the self-alignment effect, which is a great advantage of solder (bump) mounting, is hindered. Regarding height adjustment, depending on the thickness adjustment of the portion corresponding to the neck of the drum, there is a problem that cracks are likely to be generated from the constricted portion, which leaves a problem in terms of reliability.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an electronic component having improved connection reliability of a connection portion that electrically connects electrodes of connection surfaces corresponding to each other of a semiconductor package and a wiring board.

According to the present invention, a package substrate on which a semiconductor chip is mounted;
A wiring board electrically connected to the package board via a connecting portion;
The connection part provides an electronic component comprising a stress relaxation part including a laminated structure of a plastic material layer and a non-plastic material layer, and a conductor penetrating the stress relaxation part.

  In this electronic component, it is possible to significantly reduce the stress generated at the connection portion after application of thermal stress, as compared with a semiconductor device in which a semiconductor package and a wiring board are connected by a connection portion using conventional solder bumps. This is because the junction of the present invention follows the deformation due to mismatch between the linear expansion coefficients of the package substrate and the mounting substrate due to thermal stress at the junction between the semiconductor package and the mounting substrate. By becoming smaller.

  FIG. 1A shows a conventional electronic component 100 when a wiring board 101 (having an electrode 102) and a semiconductor package 103 (having an electrode 104) are connected to a solder bump (drum-type solder bump) 105. It is a cross-sectional schematic diagram. Let A be the height of the solder bump 105 at this time. A temperature change occurs, and deformation (dimension deviation) occurs due to a difference in thermal expansion coefficient between the semiconductor package 103 and the wiring substrate 101. The situation at this time is shown in FIG. The deformation causes a large dimensional shift in the vertical direction V (the solder bump height is B (A> B)) along with a dimensional shift in the horizontal direction H. The solder bump 105 has a shear strain load S as shown in the figure. It takes. Due to this shear strain, the most brittle part becomes the starting point of the breakage, and breakage occurs at the contact point between the bump and the electrode.

  By the way, the amount of shear strain generated in the solder bumps increases as the distance between the position of the solder bump 105 and the center position of the semiconductor package 103 increases in forming the electronic component 100. For this reason, the area where solder bumps can be formed is limited by the amount of shearing strain that solder bumps can tolerate, which basically makes it difficult to apply to multiple terminals and large areas. Contains.

  Therefore, when mounting such electronic components, it is very difficult to cope with the problems such as the increase in the number of terminals and the increase in area as described above with respect to the connection portion with the configuration of the conventional solder bump. ,It became clear. Therefore, there is a possibility that deformation may occur both in the horizontal direction and in the vertical direction, and it is essential to have a connection structure based on a new concept that can cope with a strong shear strain. Based on the above examination, we have come to the invention of an electronic component having a connecting portion described in detail below.

  FIG. 2 is a schematic cross-sectional view of an example of a semiconductor device according to the present invention. The electrode 2 formed on the wiring substrate 1 and the electrode 4 of the semiconductor package 3 including the package substrate 3-2 on which the semiconductor chip 3-1 is mounted are electrically connected to each other at the connection portion 5. Has been. The electrode 2 and the electrode 4 are electrically connected by a conductor 6 at a substantially central portion of the connecting portion 5 (height A when formed). The circumference of the conductor 6 is covered with the stress relaxation part 7. In other words, the conductor 6 passes through the stress relaxation part 7 to connect the electrode 2 and the electrode 4.

  The stress relaxation portion 7 includes a plastic main material layer 8 and a non-plastic material, more specifically, a metal material layer 9, each having an appropriate thickness. The electrode 2 formation surface) and / or the connection main surface (connection electrode 4 formation surface) of the package substrate 3-2 are alternately stacked in parallel to cover the periphery of the conductor wire 6. In other words, the stress relieving part 7 has the plastic material layer 8 and the metal material layer 9 having appropriate thicknesses, respectively, so that the connection main surface (connection electrode 2 formation surface) of the wiring board 1, Or / and stacked alternately in parallel to the connection main surface (surface for forming the connection electrode 4) of the package substrate 3-2, and the conductor wire 6 electrically connects the electrode 2 and the electrode 4 therein. To be arranged.

  For example, when the stress relaxation portion 7 of the connection portion 5 is entirely made of a plastic material, the stress relaxation portion 7 of the connection portion 5 has a flexible characteristic in the horizontal and vertical directions. 7 is configured to have a flexible characteristic mainly due to the effect of the plastic material layer 8 in the horizontal direction and have a rigid characteristic in the vertical direction due to the insertion of the metal material layer 9.

FIG. 3 is a schematic cross-sectional view of the electronic component when distortion due to a difference in thermal expansion coefficient in the electronic component occurs and the wiring board 1 is deformed (warped). In this figure, the dimensional deviation L in the horizontal direction H can be deformed within the plastic deformation range due to the presence of the plastic material layer 8, while the vertical displacement has a rigid characteristic and has a value A before displacement. The value B after the displacement is almost equal and the deformation is slight. Thus, along with the deformation due to the relative displacement difference between the semiconductor package 3 and the wiring substrate 1,
The plastic material layer 8 is plastically deformed to absorb the strain energy applied to the connection portion 5, relieve the stress strain caused by the thermal expansion difference between the semiconductor package 3 and the wiring substrate 1, and is stable against repeated strain. The connection can be maintained.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

(Example)
4-7 is a process schematic diagram of the Example of this invention. In FIG. 4 (1), in order to form a connection part, the plastic material sheet | seat 10 and the metal plate 11 are laminated | stacked alternately by desired height first. For example, the metal plate 11 is a copper foil having a thickness of 10 to 35 μm that is generally used for forming a circuit wiring of a printed wiring board, and the plastic material sheet 10 has a basic alloy composition Ti— (Ta, Nb, V) — ( A β titanium alloy having a thickness of 25 μm and being Zr, Hf) —O was used. Then, in order to form a conductor wire that enters substantially the center of the connecting portion, a through hole 12 corresponding to the conductor wire diameter that enters the center by punching, laser processing, drilling, or the like is formed in the semiconductor package in the laminate of metal and plastic material. It is provided at a position corresponding to the electrode pad.

  Next, as shown in FIG. 4 (2), a bundle of conductors 13, a copper bar, or a solder bar is press-fitted into the hole, and as shown in FIG. 4 (3), the end face of the laminate is flush with the end face. Then, the conductor 13 is cut so that an assembly having a shape as a connection portion is produced by repeating these steps as shown in FIG.

  Next, as shown in FIG. 5 (5), when a solder paste or the like is used to bond these electrodes made of Au, Cu or the like to the connection portion of the semiconductor package and wiring board later, Bonding films 14 and 15 made of Cu or Cu / Au layers are formed on the upper and lower surfaces of the laminate of the metal plate 11 and the plastic material sheet 10 corresponding to the corresponding positions by plating, sputtering, or the like.

  Next, as shown in FIG. 5 (6), for example, a punching die (male) 16 is used for the laminated body of the metal plate 11 and the plastic material sheet 10, and a connecting portion is used for punching. A size corresponding to the diameter is punched at a position corresponding to the electrode of the semiconductor package, and the punched laminated body 19 containing the punched metal plate 11 and the plastic material sheet 10 with a conductor as shown in FIG. The film is transferred to a base film (adhesive sheet) 18 (see FIG. 5 (6)) provided in advance under a punching die (female) 17.

  At this time, as a matter of course, the conductor 13 is longitudinally connected to the upper and lower bonding films 14 and 15 at the center (inside) of the punched laminated body 19 containing the conductor. Needless to say, the diameter of the punching die (male) 16 is larger than the diameter of the conductor 13.

  Then, as shown in FIG. 6 (8), the solder paste 21 or the conductive adhesive is applied to the conductor-punched laminate 19 using, for example, a metal mask 20 or the like.

  Next, as shown in FIG. 6 (9), the base film 18 on which the punched laminate 19 including the conductor wire is mounted is prepared for connection to the semiconductor package 22.

  The cross-sectional view of FIG. 7 (10) is the cross-sectional view of FIG. 6 (9) of the perspective view. (A) The figure shows an electrode 23 formed on the semiconductor package 22, and (b) the figure shows a state where there is a punched laminate 19 (with solder paste 21) containing a conductor wire on the base film 18.

As shown in FIG. 7 (11) (a), the punched laminate 19 containing the conductor on the base film 18 is transferred onto the electrode 23 of the semiconductor package 22, and the base film 18 used as the carrier is peeled off and removed. . Next, with respect to the electrode 25 on the wiring substrate 24 shown in (b) (the (c) shows a perspective view of (b)), the punching lamination including the conductor on the semiconductor package 22 shown in (a) is performed. The body 19 (with the solder paste 21) is connected as shown in FIG. 7 (12), and the wiring board 24 and the semiconductor package 22 are connected by the connection portion 26 made of the punched laminated body 19 with a conductor. Parts can be formed.

  The electronic component of the present invention thus manufactured was compared with that of the conventional method. For example, after applying thermal stress when a lead-free (Sn-3.0Ag-0.5Cu) solder ball connection of Φ1 mm in the conventional method is performed on a □ 9 mm resin package substrate having electrode pads at a pitch of 25 mm The generated stress was compared with the generated stress after application of thermal stress when connected by a joint portion made of a laminate of a metal having a diameter of about Φ1.5 mm and a plastic material of the present invention.

  As a result, after applying a thermal stress of about 130 ° C. to both, the maximum stress of the solder bump in the corner portion is about 150 MPa, while the maximum in the joint portion using the laminate of the metal and the plastic material of the present invention. The stress was about 110 MPa. This is because the junction of the present invention follows the deformation caused by the mismatch between the linear expansion coefficients of the package substrate and the wiring substrate due to thermal stress at the junction between the semiconductor package and the wiring substrate, and therefore the stress applied to the junction. It is clear that it can contribute to improving the connection reliability.

  In many cases, a conventional electronic component employs a method of filling the space around the solder bump connection portion with an underfill resin to improve the reliability of the connection portion. In the electronic component of the present invention, although it depends on the characteristics of the underfill resin material, the underfill resin material having such characteristics can be used as long as it works to inhibit the deformation of the plastic material at the connection portion. Application is not preferred.

  The basic alloy composition used as the plastic material of the above-described examples is expressed as Ti- (Ta, Nb, V)-(Zr, Hf) -O, and is a β-based titanium alloy (α-β type). Including both alloys and β-type alloys), and is a plastic metal material. As the plastic material for production, for example, rubber metal made of Toyotsu Material, which is a sheet-like titanium alloy system, can be used.

  Note that the β-based titanium alloy has a stress (vertical axis) -elongation (strain) (horizontal axis) diagram at the time of loading in an elastic deformation region, which is not a straight line, but shows a convex curve, even at the time of unloading. Similarly, an upwardly convex curve is exhibited. That is, in the elastic deformation region in the region where the stress is high, the strain (elongation) increases abruptly as the stress increases, and the strain (elongation) decreases abruptly as unloading proceeds. That is, this material is a material having a high elastic deformability, and is known to exhibit nonlinear elastic behavior without hysteresis. Also, it has a very small longitudinal elastic modulus (Young's modulus) of about 20 to 60 GPa. Β-type titanium alloy as a plastic material has a superelastic property with an elastic deformability of about 2.5%, and further, a plastic having a breaking elongation of up to 15% when the strain is about 2.5% or more. It is known to have dynamic performance. In this example, β-type titanium having such high elastic deformability and high plastic deformability is used. However, using a material having an appropriate plastic body performance, implementation in accordance with the spirit of the present invention. It goes without saying that is possible.

  Moreover, although copper foil was used as a non-plastic material laminated | stacked with this plastic material, ie, a metal material layer, it is not restricted to this. For example, gold (Au), silver (Ag), aluminum (Al), copper (Cu), iron (Fe), or alloys thereof can be used. .

Copper (Cu) or solder is exemplified as the conductor, but gold (Au), silver (Ag), aluminum (Al), iron (Fe) and copper (Cu) or alloys containing them can also be applied. It is.

  In this embodiment, a bundled wire or a metal rod is press-fitted as a conductor, but it is of course not limited to such a configuration. A number of bundled wires and rods including the strands of the metal conductor wires may be allowed to penetrate through the laminate of the metal plate and the plastic material layer, and the laminate may also be a plastic material depending on conditions. It is possible to form the semiconductor device of the present invention by forming only with this.

Diagram for studying the present invention FIG. 10 is a diagram for explaining a semiconductor device of the invention; The figure for demonstrating the effect of the semiconductor device of this invention The figure explaining the Example of this invention (the 1) The figure explaining the Example of this invention (the 2) The figure explaining the Example of this invention (the 3) The figure explaining the Example of this invention (the 4) The figure explaining the conventional method (the 1) Diagram for explaining a conventional method (part 2)

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 24, 101 Wiring board 2, 4, 23, 102, 104 Electrode 3, 22, 103 Semiconductor package 5, 25 Connection part 6, 13 Conductor 7 Stress relaxation part 8 Plastic material layer 9 Metal material layer 10 Plastic material Sheet 11 Metal plate 12 Through hole 14, 15 Bonding layer
16 Punching die (male)
17 Punching die (female)
18 Base film 19 Conductor punched laminate 20 Metal mask 21 Solder paste 100 Electronic component 105 Drum type solder bump 106 Drum type solder bump

Claims (6)

A package substrate on which a semiconductor chip is mounted;
A wiring board electrically connected to the package board via a connecting portion;
The electronic part comprising: a connection part including a stress relaxation part including a laminated structure of a plastic material layer and a non-plastic material layer; and a conductor penetrating the stress relaxation part.   The electronic component according to claim 1, wherein the stacked structure is stacked in a direction perpendicular to a connection main surface of the package substrate or a connection main surface of the wiring substrate.   3. The electronic component according to claim 1, wherein the conductor is any one of a plurality of or a single elemental wire, a bundled wire, and a columnar wire.   The electronic component according to claim 1, wherein the plastic material layer includes a β-based titanium (Ti) alloy.   5. The electronic component according to claim 1, wherein the non-plastic material layer is a metal material layer. The conductor is made of gold (Au), silver (Ag), aluminum (Al), copper (Cu), iron (Fe), an alloy thereof, or a solder material thereof. Item 6. The electronic component according to any one of Items 1 to 5.