JP2007189150A - Lead frame for low-height led device and method for manufacturing same - Google Patents

Lead frame for low-height led device and method for manufacturing same Download PDF

Info

Publication number
JP2007189150A
JP2007189150A JP2006007472A JP2006007472A JP2007189150A JP 2007189150 A JP2007189150 A JP 2007189150A JP 2006007472 A JP2006007472 A JP 2006007472A JP 2006007472 A JP2006007472 A JP 2006007472A JP 2007189150 A JP2007189150 A JP 2007189150A
Authority
JP
Japan
Prior art keywords
lead frame
led device
low
normal
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006007472A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Umeya
一芳 梅屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enomoto Co Ltd
Original Assignee
Enomoto Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enomoto Co Ltd filed Critical Enomoto Co Ltd
Priority to JP2006007472A priority Critical patent/JP2007189150A/en
Priority to KR20060109218A priority patent/KR20070076390A/en
Priority to TW095142650A priority patent/TW200735417A/en
Priority to CN 200610172361 priority patent/CN101005109A/en
Publication of JP2007189150A publication Critical patent/JP2007189150A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lead frame for a low-height LED device that prevents the occurrence of exfoliation between the lead frame and a resin, and cracks in the resin, and that has a height of ≤1 mm, and to provide a method for manufacturing the same. <P>SOLUTION: In the lead frame for a low-height LED device, a long deformed metal material is composed so that a thickness ratio is 2.5:1-3.5:1 between normal parts 2a, 2b and a thin-walled part 1; and the normal part 2b, the thin-walled part 1, and the normal part 2a are sequentially arranged in a longitudinal direction. The long deformed metal material is punched so as to form chip pads and inner leads 3a-8a at the thin-walled part, and to form outer leads 12c-12f at the normal parts. Next, a resin-made cup is injection-molded and cut so as to form an end of each outer lead after injection molding without bending the outer leads. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、背が低いＬＥＤ（発光ダイオード）デバイスを製造するための低背ＬＥＤデバイス用リードフレームに関する。また、本発明は低背ＬＥＤデバイス用リードフレームの製造方法に関する。 The present invention relates to a lead frame for a low profile LED device for manufacturing a short LED (light emitting diode) device. The present invention also relates to a method for manufacturing a lead frame for a low-profile LED device.

図７は従来のＬＥＤデバイスの正面断面図である。
厚さが均一の長尺板状金属材料をトランスファープレスを通して多段打抜き加工した後に射出成形機に通して、チップパッド部及びインナー・リード部１２ａ、１２ｂに樹脂成形して樹脂製カップ部を形成し、続いてアウター・リード部１２ｃ、１２ｄ、１２ｅ、１２ｆを２ヶ所で９０°曲げ加工して'コ'の字に成形し、アウター・リード部の先端１２ｄ、１２ｆを樹脂製カップ部の底面１０ｄに密接させ、アウター・リード部の根元１２ｃ、１２ｅを樹脂製カップ部の側面１０ｃに平行としている。 FIG. 7 is a front sectional view of a conventional LED device.
A long plate-shaped metal material having a uniform thickness is subjected to multi-stage punching through a transfer press and then passed through an injection molding machine to form a resin cup portion by resin molding on the chip pad portion and the inner lead portions 12a and 12b. Subsequently, the outer lead portions 12c, 12d, 12e, and 12f are bent 90 ° at two locations to form a “U” shape, and the tips 12d and 12f of the outer lead portion are formed into the bottom surface 10d of the resin cup portion. The bases 12c and 12e of the outer lead part are parallel to the side face 10c of the resin cup part.

樹脂製カップ部の上面１０ａ、内側面１０ｂ、内上面１０ｆが形成されており、内上面１０ｆに隣接してインナー・リード部１２ａ、１２ｂが互いに電気絶縁されて露出している。内側面１０ｂは、垂直ではなく、傾斜しており、上方にゆくにしたがって広がる空間を形成している。
そして、内側面１０ｂは反射面として機能している。不図示のＬＥＤチップを樹脂製カップ部の内上面に貼り付け、ＬＥＤチップの電極と対応するインナー・リード部１２ａ、１２ｂとを金線で接続するワイヤーボンディング加工が行われる。
従来のＬＥＤデバイスのハイト（高さ）は最低でも１．４ｍｍであるが、近年ではハイト（高さ）が１ｍｍを切るＬＥＤデバイスが求められている。 An upper surface 10a, an inner side surface 10b, and an inner upper surface 10f of the resin cup portion are formed, and the inner lead portions 12a and 12b are electrically insulated from each other and exposed adjacent to the inner upper surface 10f. The inner side surface 10b is not vertical but is inclined, and forms a space that expands upward.
The inner side surface 10b functions as a reflecting surface. A wire bonding process is performed in which an LED chip (not shown) is attached to the inner upper surface of the resin cup portion, and the inner lead portions 12a and 12b corresponding to the electrodes of the LED chip are connected with gold wires.
The height (height) of a conventional LED device is at least 1.4 mm, but in recent years, an LED device having a height (height) of less than 1 mm has been demanded.

従来のＬＥＤデバイスについて、ハイト（高さ）を低減させようとして、リードフレームより下の樹脂部分の厚さを減少させるとともに、アウター・リード部の根元１２ｃ、１２ｅの長さを対応して短くすることを試みたところ、リードフレームに加わる曲げ応力が大きくなりすぎ、リード・フレームと樹脂との間に剥離が生じたり、樹脂にひび割れが生じたりするトラブルが生じやすい。そのため、封止のためのエポキシ樹脂が剥離部やひび割れ部を通って外部へ漏れ出しやすくＬＥＤデバイスの欠陥となり問題である。 In the conventional LED device, in order to reduce the height (height), the thickness of the resin portion below the lead frame is reduced, and the lengths of the roots 12c and 12e of the outer lead portion are correspondingly shortened. When this is attempted, the bending stress applied to the lead frame becomes too large, and a trouble such as separation between the lead frame and the resin or cracking of the resin is likely to occur. Therefore, the epoxy resin for sealing easily leaks to the outside through the peeled portion or the cracked portion, which causes a problem in the LED device.

そこで、本発明の目的は、リード・フレームと樹脂との間の剥離や樹脂のひび割れが生じにくいとともに、ハイト（高さ）が低く１ｍｍ以下である低背ＬＥＤデバイスを提供することである。また、このような低背ＬＥＤデバイスの製造方法を提供する。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a low-profile LED device in which peeling between a lead frame and a resin and cracking of the resin are difficult to occur, and the height (height) is low and is 1 mm or less. Moreover, the manufacturing method of such a low profile LED device is provided.

発明者は上記目的を達成するため鋭意研究を進めて、従来のＬＥＤデバイスとは全く異なった発想の本発明に係るＬＥＤデバイス用リードフレームを発明するに至ったものである。   The inventor has intensively studied to achieve the above object, and has led to the invention of a lead frame for an LED device according to the present invention, which has a completely different concept from that of a conventional LED device.

上記目的は、請求項１に係る低背ＬＥＤデバイス用リードフレーム、すなわち、
厚さの比が２．５：１〜３．５：１である通常部と薄肉部と通常部とを長手方向に順に並べた長尺異形状金属材料を打抜き加工して、薄肉部にチップパッド部及びインナー・リード部を形成し、通常部にアウター・リード部を形成し、次に、樹脂製カップ部を射出成形し、その後に切断してアウター・リード部の端部を形成し、アウター・リード部を曲げない、低背ＬＥＤデバイス用リードフレームによって、達成される。 The object is to provide a lead frame for a low profile LED device according to claim 1, i.e.
A long irregular metal material in which a normal portion, a thin portion, and a normal portion having a thickness ratio of 2.5: 1 to 3.5: 1 are sequentially arranged in the longitudinal direction is punched into chips in the thin portion. Form the pad part and inner lead part, form the outer lead part in the normal part, then injection mold the resin cup part, then cut to form the end of the outer lead part, This is achieved by a lead frame for a low-profile LED device that does not bend the outer lead portion.

本発明の好ましい実施態様においては、請求項２に記載のように、Ｒ、Ｇ、Ｂの３個のＬＥＤチップを取り付けることができる。   In a preferred embodiment of the present invention, as described in claim 2, three LED chips of R, G, and B can be attached.

本発明のさらに好ましい実施態様においては、請求項３に記載のように、高さが１ｍｍ以下である。   In a further preferred embodiment of the present invention, as described in claim 3, the height is 1 mm or less.

また、本発明の目的は、請求項４に係る低背ＬＥＤデバイス用リードフレームの製造方法、すなわち、通常部と薄肉部の厚さの比が２．５：１〜３．５：１であり、通常部と薄肉部と通常部とを長手方向に順に並べた長尺異形状金属材料をトランスファープレス及び射出成形機に通して、打抜き加工、切断加工、及び樹脂成形加工を行い、曲げ加工を行わずに高さが１ｍｍ以下の低背ＬＥＤデバイス用リードフレームを得る低背ＬＥＤデバイス用リードフレームの製造方法によっても達成される。   Another object of the present invention is to provide a method for manufacturing a lead frame for a low-profile LED device according to claim 4, that is, the ratio of the thickness of the normal part to the thin part is 2.5: 1 to 3.5: 1. The long irregular metal material in which the normal part, thin part and normal part are arranged in order in the longitudinal direction is passed through a transfer press and an injection molding machine, and punching, cutting, and resin molding are performed and bending is performed. This is also achieved by a method for manufacturing a lead frame for a low-profile LED device that obtains a lead frame for a low-profile LED device having a height of 1 mm or less without performing the process.

アウター・リード部を曲げないので、曲げ応力が作用しない。そのため、リードフレームと樹脂との間の剥離がほとんど生じないとともに樹脂のひび割れもほとんどない。また、製造工程を短縮することができる。   Since the outer lead is not bent, bending stress does not act. Therefore, there is almost no peeling between the lead frame and the resin and there is almost no cracking of the resin. In addition, the manufacturing process can be shortened.

アウター・リード部がインナー・リード部やチップ・パッド部に比べて板厚が厚いので放熱効果が大きい。そのために、出力のより大きなＬＥＤをのせることができる。
特に、ＬＥＤデバイスのハイト（高さ）を１ｍｍ以下にすることができ、出願人が従来製造していたＬＥＤデバイスに比べ約１／２とすることができた。そのため、液晶ディスプレイのさらなる薄型化が可能となる。 The outer lead part is thicker than the inner lead part and the chip pad part, so the heat dissipation effect is great. Therefore, an LED with a larger output can be mounted.
In particular, the height (height) of the LED device can be reduced to 1 mm or less, and can be reduced to about ½ compared with the LED device conventionally manufactured by the applicant. Therefore, the liquid crystal display can be further reduced in thickness.

以下、本発明の実施形態の低背ＬＥＤデバイス用リードフレームについて、添付図面を参照して、詳細に説明する。   Hereinafter, a lead frame for a low-profile LED device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

図３は、本発明の実施形態の低背ＬＥＤデバイス用リードフレームを製造するのに用いた長尺異形状金属材料の断面図であり、長手方向に直交する断面についての断面図である。
厚さが０．１５〜０．２５ｍｍ程度の薄肉部１の両側方は、厚さが０．４〜０．５ｍｍ程度の通常部２ａ、２ｂによって平行に挟まれた形状であり、下面は平坦になっているが、上面は薄肉部１がへこんでおり、段差がある。材質としては、電気伝導性や価格の点から、銅合金やステンレス鋼などを用いることができる。 FIG. 3 is a cross-sectional view of a long irregular metal material used for manufacturing a lead frame for a low-profile LED device according to an embodiment of the present invention, and is a cross-sectional view of a cross section orthogonal to the longitudinal direction.
Both sides of the thin portion 1 having a thickness of about 0.15 to 0.25 mm are sandwiched in parallel by the normal portions 2a and 2b having a thickness of about 0.4 to 0.5 mm, and the lower surface is flat. However, the thin-walled portion 1 is recessed on the upper surface, and there is a step. As a material, copper alloy, stainless steel, or the like can be used from the viewpoint of electrical conductivity and cost.

図４は、図３に示した長尺異形状金属材料をトランスファープレス（多段順送りプレス機群）に通して、打抜き加工し、Ｖ字溝を形成した状態を示す断面図である。打抜き加工して、打抜き部１ａを設け、薄肉部１にインナー・リード部及びチップ・パッド部を形成し、通常部２ａ、２ｂにアウター・リード部を形成している。
また、通常部２ａ、２ｂについては、後工程で切断し、アウター・リード部の先端とすべき位置に、上面及び下面からＶ字溝５ｃ、８ｃを形成している。 FIG. 4 is a cross-sectional view showing a state in which the long irregular metal material shown in FIG. 3 is passed through a transfer press (multistage progressive press machine group) and punched to form a V-shaped groove. A punching portion 1a is provided by punching, an inner lead portion and a chip pad portion are formed in the thin portion 1, and an outer lead portion is formed in the normal portions 2a and 2b.
Further, the normal portions 2a and 2b are cut in a subsequent process, and V-shaped grooves 5c and 8c are formed from the upper surface and the lower surface at positions to be the tips of the outer lead portions.

図５は、図４に示した半加工の長尺異形状金属材料を射出成形機に通して、インサート・モールド加工して樹脂製カップ部を形成した状態を示す断面図である。長尺異形状金属材料の下面にはインナー・リード部の一部とチップ・パッド部を露出させ、それらの周囲に樹脂製カップ部本体を下方へ突出して形成してある。樹脂製カップ部本体は、上面１０ａ、側面１０ｃ、及び内側面である反射面１０ｂによって囲まれている。一方、長尺異形状金属材料の上面には、薄肉部１に伴うへこみ、インナー・リード部の打抜き部１ａ、及び不図示のアウター・リード部の打抜き部を充填するように樹脂成形してある。１０ｄは底面、１０ｅは樹脂注入部へこみ部を示している。樹脂製カップ部の側方からはアウター・リード部が垂直にわずかに突出し、Ｖ字溝５ｃ、８ｃが位置している。また、樹脂製カップ部の前後（長手方向）の側面には、薄肉部にインナー・リード部とわずかに離れて形成されたハンガー・リード部の端縁がわずかに食い込んで位置している。   FIG. 5 is a cross-sectional view showing a state in which a resin-made cup portion is formed by inserting and molding the half-processed long irregular metal material shown in FIG. 4 through an injection molding machine. A part of the inner lead part and the chip pad part are exposed on the lower surface of the long irregular metal material, and a resin cup part main body is formed so as to protrude downward around them. The resin cup part body is surrounded by an upper surface 10a, a side surface 10c, and a reflection surface 10b which is an inner surface. On the other hand, the upper surface of the long irregular metal material is resin-molded so as to fill the dents associated with the thin-walled portion 1, the punched portion 1a of the inner lead portion, and the punched portion of the outer lead portion (not shown). . Reference numeral 10d denotes a bottom surface, and 10e denotes a dent part of the resin injection part. From the side of the resin cup part, the outer lead part slightly protrudes vertically, and the V-shaped grooves 5c and 8c are located. Further, on the front and back (longitudinal direction) side surfaces of the resin cup portion, the edge of the hanger lead portion formed slightly apart from the inner lead portion in the thin portion is slightly bitten.

インサート・モールド工程の後に、アウター・リード部のＶ字溝５ｃ、８ｃの位置で切断してアウター・リード部の端部を形成する。チップ・ボンディングし、エポキシ樹脂やシリコンで封止し、ＬＥＤデバイスを完成した後に、ＬＥＤデバイス自体を押して、ハンガー・リード部を樹脂製カップ部の前後の側面から除去して取り外し、ＬＥＤデバイス単品とする。   After the insert molding process, the outer lead portion is cut at the positions of the V-shaped grooves 5c and 8c to form the end portion of the outer lead portion. After chip bonding, sealing with epoxy resin or silicon, and completing the LED device, push the LED device itself, remove the hanger leads from the front and back sides of the resin cup, and remove the LED device separately. To do.

図１は本発明の実施形態の低背ＬＥＤデバイス用リードフレームの平面図であり、図２はその底面図である。図５は図１におけるＣ−Ｃ断面図であり、図６は図１におけるＤ−Ｄ断面図である。   FIG. 1 is a plan view of a lead frame for a low-profile LED device according to an embodiment of the present invention, and FIG. 2 is a bottom view thereof. 5 is a cross-sectional view taken along the line CC in FIG. 1, and FIG. 6 is a cross-sectional view taken along the line DD in FIG.

インナー・リード部３ａ、６ａをまたいで、例えばＲ（赤色）ＬＥＤチップが載置されボンディングされる。同様に、インナー・リード部４ａ、７ａをまたいで、例えばＧ（緑色）-ＬＥＤチップが載置されボンディングされる。また、同様にインナー・リード部５ａ、８ａをまたいで、例えば、Ｂ（青色）-ＬＥＤチップを載置されボンディングされる。３色のＬＥＤチップを載置することによって、フルカラーを発光することができる。   For example, an R (red) LED chip is placed and bonded across the inner lead portions 3a and 6a. Similarly, for example, a G (green) -LED chip is placed and bonded across the inner lead portions 4a and 7a. Similarly, for example, a B (blue) -LED chip is placed and bonded across the inner lead portions 5a and 8a. By mounting three color LED chips, full color can be emitted.

樹脂製カップ部の上方をレンズに覆い、エポキシ樹脂等で封止することによって、低背ＬＥＤデバイスが完成する。樹脂製カップ部の側方から直角にわずかに突出しているアウター・リード部は曲げ加工せずに使用する。   The upper part of the resin cup is covered with a lens and sealed with an epoxy resin or the like to complete a low-profile LED device. Use the outer lead part protruding slightly from the side of the resin cup part at a right angle without bending.

低背ＬＥＤデバイス用リードフレームの平面図Plan view of lead frame for low profile LED devices 低背ＬＥＤデバイス用リードフレームの底面図Bottom view of lead frame for low profile LED devices 低背ＬＥＤデバイス用リードフレームを製造するのに用いる長尺異形状金属材料の断面図Cross-sectional view of a long irregular metal material used to manufacture a lead frame for low-profile LED devices 図３に示す長尺異形状金属材料をトランスファープレス（多段順送りプレス機群）に通して打抜き加工し、Ｖ字溝を形成した状態を示す断面図FIG. 3 is a cross-sectional view showing a state in which a long irregular metal material shown in FIG. 3 is punched through a transfer press (multistage progressive press machine group) to form a V-shaped groove. 図１におけるＣ-Ｃ断面図CC sectional view in FIG. 図１におけるＤ-Ｄ断面図DD sectional view in FIG. 従来のＬＥＤデバイスの正面断面図Front sectional view of a conventional LED device

符号の説明Explanation of symbols

１ 薄肉部
２ａ 通常部
２ｂ 通常部
３ａ インナー・リード部
４ａ インナー・リード部
５ａ インナー・リード部
６ａ インナー・リード部
７ａ インナー・リード部
８ａ インナー・リード部
１ａ 打抜き部
５ｃ Ｖ字溝
８ｃ Ｖ字溝
１０ａ 上面
１０ｂ 反射面（内側面）
１０ｃ 側面
１０ｄ 底面
１０ｅ 樹脂注入部へこみ部
１０ｆ 内上面
１２ａ インナー・リード部
１２ｂ インナー・リード部
１２ｃ アウター・リード部
１２ｄ アウター・リード部
１２ｅ アウター・リード部
１２ｆ アウター・リード部

DESCRIPTION OF SYMBOLS 1 Thin part 2a Normal part 2b Normal part 3a Inner lead part 4a Inner lead part 5a Inner lead part
6a Inner lead part 7a Inner lead part 8a Inner lead part 1a Punched part
5c V-shaped groove 8c V-shaped groove 10a Upper surface 10b Reflecting surface (inner surface)
10c Side surface 10d Bottom surface 10e Resin injection part dent part 10f Inner upper surface 12a Inner lead part 12b Inner lead part 12c Outer lead part 12d Outer lead part 12e Outer lead part 12f Outer lead part

Claims (4)

厚さの比が２．５：１〜３．５：１である通常部と薄肉部と通常部とを長手方向に順に並べた長尺異形状金属材料を打抜き加工して、薄肉部にチップパッド部及びインナー・リード部を形成し、通常部にアウター・リード部を形成し、次に、樹脂製カップ部を射出成形し、その後に切断してアウター・リード部の端部を形成し、アウター・リード部を曲げない、低背ＬＥＤデバイス用リードフレーム。   A long irregular metal material in which a normal portion, a thin portion, and a normal portion having a thickness ratio of 2.5: 1 to 3.5: 1 are arranged in order in the longitudinal direction is punched into chips in the thin portion. Form the pad part and inner lead part, form the outer lead part in the normal part, then injection mold the resin cup part, then cut to form the end of the outer lead part, A lead frame for low-profile LED devices that does not bend the outer lead. Ｒ、Ｇ、Ｂの３個のＬＥＤチップを取り付けることができる請求項１に記載の低背ＬＥＤデバイス用リードフレーム。   The lead frame for a low-profile LED device according to claim 1, wherein three LED chips of R, G, and B can be attached. 高さが１ｍｍ以下である請求項１または請求項２に記載の低背ＬＥＤデバイス用リードフレーム。   The lead frame for a low-profile LED device according to claim 1 or 2, wherein the height is 1 mm or less. 通常部と薄肉部の厚さの比が２．５：１〜３．５：１であり、通常部と薄肉部と通常部とを長手方向に順に並べた長尺異形状金属材料をトランスファープレス及び射出成形機に通して、打抜き加工、切断加工、及び樹脂成形加工を行い、曲げ加工を行わずに高さが１ｍｍ以下の低背ＬＥＤデバイス用リードフレームを得る低背ＬＥＤデバイス用リードフレームの製造方法。

A ratio of the thickness of the normal part to the thin part is 2.5: 1 to 3.5: 1, and a long irregular metal material in which the normal part, the thin part, and the normal part are sequentially arranged in the longitudinal direction is transfer-pressed. The lead frame for a low-profile LED device is obtained by performing punching, cutting, and resin molding through an injection molding machine to obtain a lead frame for a low-profile LED device having a height of 1 mm or less without performing a bending process. Production method.

JP2006007472A 2006-01-16 2006-01-16 Lead frame for low-height led device and method for manufacturing same Pending JP2007189150A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006007472A JP2007189150A (en) 2006-01-16 2006-01-16 Lead frame for low-height led device and method for manufacturing same
KR20060109218A KR20070076390A (en) 2006-01-16 2006-11-07 Low height lead frame for led device and the manufacturing method thereof
TW095142650A TW200735417A (en) 2006-01-16 2006-11-17 Lead frame for low-height led device and method for manufacturing the same
CN 200610172361 CN101005109A (en) 2006-01-16 2006-12-18 Low height lead frame for LED device and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006007472A JP2007189150A (en) 2006-01-16 2006-01-16 Lead frame for low-height led device and method for manufacturing same

Publications (1)

Publication Number Publication Date
JP2007189150A true JP2007189150A (en) 2007-07-26

Family

ID=38344087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006007472A Pending JP2007189150A (en) 2006-01-16 2006-01-16 Lead frame for low-height led device and method for manufacturing same

Country Status (4)

Country Link
JP (1) JP2007189150A (en)
KR (1) KR20070076390A (en)
CN (1) CN101005109A (en)
TW (1) TW200735417A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045265A (en) * 2008-08-15 2010-02-25 Techwin Opto-Electronics Co Ltd Method of manufacturing led lead frame
KR100970878B1 (en) 2008-04-23 2010-07-16 주식회사 파워라이텍 Lead frame for led package with plenty of diode chips and the led package thereof
CN103994359A (en) * 2014-06-10 2014-08-20 吴锦星 Modularized LED lamp strip and processing method thereof

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
CN101344236B (en) * 2008-09-03 2010-06-02 湖北匡通电子有限公司 Short-pitch thin LED lead frame
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100970878B1 (en) 2008-04-23 2010-07-16 주식회사 파워라이텍 Lead frame for led package with plenty of diode chips and the led package thereof
JP2010045265A (en) * 2008-08-15 2010-02-25 Techwin Opto-Electronics Co Ltd Method of manufacturing led lead frame
JP4531830B2 (en) * 2008-08-15 2010-08-25 特新光電科技股▲分▼有限公司 LED lead frame manufacturing method
CN103994359A (en) * 2014-06-10 2014-08-20 吴锦星 Modularized LED lamp strip and processing method thereof

Also Published As

Publication number Publication date
CN101005109A (en) 2007-07-25
TW200735417A (en) 2007-09-16
KR20070076390A (en) 2007-07-24

Similar Documents

Publication Publication Date Title
JP2007189150A (en) Lead frame for low-height led device and method for manufacturing same
JP2009500841A (en) Semiconductor device
JP2005294736A (en) Manufacturing method for semiconductor light emitting device
TWI505519B (en) Light-emitting diode light bar and the method for manufacturing the same
US20090289274A1 (en) Package structure of light emitting diode and method of manufacturing the same
JP2006203052A (en) Surface-mounting semiconductor element
JP2007305671A (en) Lead frame, and semiconductor device using the same
JP5233992B2 (en) Light emitting device
TWI550784B (en) Flat no-lead package and manufacturing method thereof
JP2010021374A (en) Semiconductor package
US9615493B2 (en) Light emitting device, and method for manufacturing circuit board
JP5180694B2 (en) LED chip mounting substrate manufacturing method, LED chip mounting substrate mold, LED chip mounting substrate, and LED
JP3999780B2 (en) Lead frame manufacturing method
JP5180690B2 (en) LED chip mounting substrate manufacturing method, LED chip mounting substrate mold, LED chip mounting substrate, and LED
JP6104506B2 (en) Mold structure for light emitting diode package
JP3967314B2 (en) Light emitting element
CN103545415B (en) The manufacture method of light emitting diode
JP2012216654A (en) Resin mold frame and optical semiconductor device
JP2008147575A (en) Light emitting diode
JP5359135B2 (en) Light emitting device
JP2015159273A (en) Lead frame and manufacturing method of the same, and semiconductor device and manufacturing method of the same
WO2015111623A1 (en) Lead frame and method for manufacturing same, semiconductor device and method for manufacturing same
JPH09232637A (en) Manufacture of lead frame and light emitting device
JP6888314B2 (en) Manufacturing method of light emitting device
JP2006135267A (en) Lead frame for light-emitting diode