JP2010021374A - Semiconductor package - Google Patents

Semiconductor package Download PDF

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Publication number
JP2010021374A
JP2010021374A JP2008180760A JP2008180760A JP2010021374A JP 2010021374 A JP2010021374 A JP 2010021374A JP 2008180760 A JP2008180760 A JP 2008180760A JP 2008180760 A JP2008180760 A JP 2008180760A JP 2010021374 A JP2010021374 A JP 2010021374A
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JP
Japan
Prior art keywords
semiconductor package
slit
groove
lead
width
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Pending
Application number
JP2008180760A
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Japanese (ja)
Inventor
Koichi Takeda
Tatsuya Tonoki
達也 外木
耕一 武田
Original Assignee
Hitachi Cable Ltd
日立電線株式会社
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Publication date
Application filed by Hitachi Cable Ltd, 日立電線株式会社 filed Critical Hitachi Cable Ltd
Priority to JP2008180760A priority Critical patent/JP2010021374A/en
Publication of JP2010021374A publication Critical patent/JP2010021374A/en
Application status is Pending legal-status Critical

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package for flip chip mounting having a structure in which a slit is provided by press punching using a die and having a lead excellent in heat dissipation.
A semiconductor package includes a semiconductor element having a bottom electrode for electrical connection and a lead on which the semiconductor element is flip-chip mounted while being connected to the bottom electrode. In addition, a groove portion 18 having a plate thickness previously made thinner than other portions is formed in the strip material 21 or the plate material 26 made of copper, a copper alloy, or an iron alloy, and the groove portion 18 has a width smaller than the width of the groove portion 18. A slit 17 is provided, and the groove portions 18 separated by the slit 17 serve as the lead 16, and the semiconductor element 11 is mounted so as to straddle the slit 17.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor package on which a semiconductor element such as an LED (Light Emitting Diode) is mounted.

  Conventionally, a semiconductor package on which a semiconductor element such as an LED is mounted generally has a structure as shown in FIG. That is, a lead is formed by bending and punching a thin copper strip by a press working method, and a housing 102 made of a sealing resin such as an epoxy resin is molded by an injection molding method. Then, the LED chip 103 is bonded to the lead 101 via solder or silver paste, and the LED chip 103 and the lead 101 are bonded with an Au (gold) wire 104 called a so-called bonding wire, and then the light emitting window is formed. The transparent resin 105 is poured and solidified to constitute the main part of the product (Patent Documents 1, 2, and 3).

JP 2004-274027 A JP 2006-313943 A JP 2007-067443 A

In recent years, in order to improve the luminous efficiency of LEDs, flip-chip mounting, in which a lower electrode for electrical connection is provided on the lower surface of an LED element and a semiconductor element is directly connected to a lead without using an Au wire ( A technique called “illustration omitted” has come to be used.
In this case, since there is no electrode on the upper surface of the LED element, there is no obstacle when light is emitted to the outside, and further improvement in luminous efficiency is achieved.
In order to adopt such a structure, it is necessary that the lead is extended to the lower surface of the LED element, but in that case, the slit width for dividing the lead is also smaller than the width dimension of the LED element. It is necessary to be.

In order to ensure a higher production efficiency, the slit is required to be punched by a pressing method using a mold. However, when the material is thick, so-called material sag cannot be ignored. It occurs at a high frequency and frequency, making accurate punching difficult or impossible. Therefore, in order to form the slits by press punching, it is required that the material is thin.
However, in contrast, in order to improve heat dissipation, it is desirable that the thickness of the entire lead frame is thicker. This is because if the plate thickness is thin, the diffusivity due to heat conduction decreases, and conversely, the thicker the plate, the better the diffusivity due to heat conduction.
It is difficult or impossible with the prior art to simultaneously satisfy two requirements that are in a trade-off relationship with respect to such a plate thickness.

As described above, in the conventional technique, a slit is provided by press punching using a die in order to ensure a higher production efficiency, and a flip having a thick lead with excellent heat dissipation. It has been extremely difficult to realize a chip mounting package.
The present invention has been made in view of such a problem, and an object of the present invention is to provide a slit having a structure in which a slit is provided by press punching using a die and has a lead excellent in heat dissipation. The object is to provide a semiconductor package for chip mounting.

  The semiconductor package of the present invention is a semiconductor package having a semiconductor element having a lower surface electrode for electrical connection and a lead on which the semiconductor element is flip-chip mounted in a state of being connected to the lower surface electrode, A groove or strip made of a copper alloy or an iron alloy is formed with a groove portion whose thickness is previously made thinner than other portions, and a slit having a width smaller than the width of the groove portion is provided in the groove portion and separated by the slit. Each of the groove portions serves as the lead, and the semiconductor element is mounted so as to straddle the slit.

  According to the present invention, a flip-chip mounting semiconductor package having a structure in which a slit is provided by press punching using a die and has a thickness that can ensure excellent heat dissipation is realized.

Hereinafter, a semiconductor package according to the present embodiment will be described with reference to the drawings.
FIG. 1 is a diagram showing a main configuration of a semiconductor package according to the present embodiment, and FIG. 2 is a diagram showing a method for forming a groove in the semiconductor package shown in FIG.

  The semiconductor package 10 includes a semiconductor element 11, a lead frame 12, a resin housing 13, and a transparent resin 14 as main components.

  The semiconductor element 11 is, for example, an LED element, and the lower surface thereof is electrically connected to a lead 16 (16a, 16b; hereinafter, a symmetric structure is similarly expressed) as a so-called flip chip mounting chip. A bottom electrode (not shown) for connection is provided.

  The lead frame 12 includes a thick portion 15 that is a thick portion and a lead 16 that is a thin portion. The lead 16a and the lead 16b are separated on the left and right by the slit 17. In FIG. 1, only the main structure inside the resin housing 13 is drawn and the outside is not shown, but actually, as shown in FIGS. 3 and 4 to be described later, the resin housing 13 is shown. Needless to say, a so-called outer lead 22 exists on the outer side.

  The thick portion 15 is a portion in which the plate thickness of the strip 21 or plate made of copper, copper alloy or iron alloy, which is the material for forming the lead frame 12, is used as it is, and is shown in FIG. 2 with the same plate thickness. As shown in FIG.

  The lead 16 is formed by subjecting the strip 21 or plate made of copper, a copper alloy, or an iron alloy, which is a material for forming the lead frame 12, to preferably perform a cutting process using the rotary cutter 20 to provide the groove 18. By making the plate thickness thinner than the thick wall portion 15 outside the groove portion 18 and further providing a slit 17 having a width smaller than the width of the groove portion 18 in the groove portion 18, the groove portions 18 are separated to the left and right, respectively. Leads 16a and 16b.

  The semiconductor element 11 is mounted on the upper surface of the lead 16 by a so-called flip-chip method without using a bonding wire such as an Au wire.

  The resin housing 13 corresponds to a so-called sealing resin in the case of a general package for a semiconductor integrated circuit, and is molded (injection molded) leaving the window portion 19.

  The transparent resin 14 is molded so as to fill the space of the window portion 19 using a resin having a high transparency such as a transparent epoxy resin and having a good shape reproducibility and sealing property in molding. Is.

  As described above, the semiconductor package 10 according to the present embodiment includes the leads 16 that are flip-chip mounted in a state in which the semiconductor element 11 having the bottom electrode is directly electrically connected without using a bonding wire or the like. A groove portion 18 having a plate thickness made thinner than other portions in advance is formed in the strip 21 or plate made of copper, copper alloy, or iron alloy, and the groove portion 18 has a width smaller than the width of the groove portion 18. The slits 17 are provided at predetermined positions, and the groove portions 18 separated into the left and right by the slits 17 are leads 16a and 16b, respectively. The semiconductor element 11 is mounted so as to straddle the slit 17, and the periphery thereof is sealed with the resin housing 13 and the transparent resin 14. A plurality of semiconductor packages 10 formed in a row in one strip 21 or plate material are finally cut into packages to form individual products.

  In the semiconductor package 10 according to the present embodiment in which the main portion is configured as described above, the groove portion 18 is formed only on a portion of the strip material 21 or the plate material of copper, copper alloy, or iron alloy having a thickness sufficient to ensure heat dissipation. Since a thin-pitch lead 16 is formed by previously forming a thin portion and punching out this portion, flip-chip mounting is possible. In addition, since the portion other than the removal remains thick, heat dissipation is not impaired.

  Here, as for the plate thickness of the groove portion 18 which is a thinned portion, it is desirable that the relationship between the plate thickness t and the slit width s is t ≦ s. In other words, it is desirable to set the aspect ratio t / s of the slit 17 so that t / s ≦ 1. This is to avoid the occurrence of material sagging or other punching defects in the vicinity of the slit 17 when the slit 17 is formed by press punching when t> s.

In addition, the groove 18 is formed by cutting the material of the corresponding portion of the strip 21 by pressing against the strip 21 while rotating the rotary cutter 20 and relatively moving it in parallel. It is desirable to use the method.
As a method for forming the groove portion 18, in addition to the cutting method, a so-called half-etching method in which a portion of the groove portion 18 is chemically dissolved to a desired depth with a chemical, or a rolling roll is pressed against the strip material 21 or the plate material. A rolling method or the like in which the groove portion 18 is formed by plastic deformation of the portion can also be applied. However, in the etching method, the production efficiency is deteriorated due to the slow dissolution rate, and thus the manufacturing cost is reduced. There is a drawback of increasing.
Further, since the rolling method is plastic processing, it is necessary to cause the material of the recessed portion to flow to another portion, and the groove portion 18 does not follow a predetermined size or shape due to the so-called stress flow of the material at this time. There is a very high possibility that the distortion due to the residual stress at this time will remain in the groove 18 and its surroundings with a non-negligible magnitude.
Moreover, after forming the groove portion 18 in this way, the slit 17 is formed in a predetermined portion of the groove portion 18 by press punching. Since the strain caused by the stress flow and the residual stress is added to the lead 16, the lead 16, which is finally left in the groove 18, is accumulated due to the press twice in total. There is an extremely high risk that distortion will occur. Then, due to the accumulation of distortion of the leads 16 and the occurrence of dimensional defects, when the semiconductor element 11 is flip-chip mounted, accurate and reliable electrical connection, mechanical fixation, and the like are ensured. There is an extremely high risk that this will become difficult.
From such a viewpoint, it is desirable to use a cutting method in which the groove portion 18 scrapes the material with the rotary cutter 20.

  A plurality of rows of grooves 18 are formed in the strip 21 or plate made of copper, copper alloy or iron alloy, and slits 17 are provided in the respective grooves 18 to form leads 16 respectively. It is also possible to form a so-called light emitting module by connecting and mounting the semiconductor elements 11 respectively.

  As described above, the semiconductor package according to the present embodiment has a structure in which slits are provided by press punching using a mold with high production efficiency, and has a thickness that can ensure excellent heat dissipation. A semiconductor package for flip chip mounting with a lead can be realized.

  A semiconductor package as described in the above embodiment was manufactured. FIG. 3 is a diagram showing a lead frame used in the semiconductor package in the process of manufacturing the semiconductor package manufactured in this example, and FIG. 4 is a light-emitting module in the process of manufacturing when a light-emitting module is manufactured as a variation. FIG. 5 is a diagram showing a completed light emitting module.

  First, as shown in FIG. 2, the groove portion 18 was formed in the strip material 21. Specifically, a groove 18 having a width of 1.0 mm and a depth of 0.13 mm is formed on a strip 21 having a thickness of 0.20 mm by a cutting method using a rotary cutter 20 having a blade width of 1.0 mm and a diameter of 150 mm. did.

  Subsequently, as shown in FIG. 3, the strip 21 is passed through a press machine using upper and lower molds for press punching, and is subjected to press punching, whereby the portion thinned by the above cutting is performed. A slit 17 having a width of 0.1 mm smaller than the width of the groove 18 was provided. Since the plate thickness of the groove portion 18 was 0.20 mm−0.13 mm = 0.07 mm by the above-described cutting process, the aspect ratio was t / s = 0.7. Accordingly, it is easy to remove such a slit having a width of 0.1 mm with a press, and thus no significant sagging or the like was observed. At the same time, the peripheral portion such as the outer lead 22 that is the thickness of 0.2 mm is also subjected to press punching so as to match the designed outer shape of the semiconductor package 10. However, at this time point, a so-called connecting portion with the outer frame portion 23 is provided so that individual lead frames 12 corresponding to individual packages including the lead 16, the thick portion 15 and the outer lead 22 are not dropped. The tie bars 24 and 25 were left.

  Next, the entire lead frame 12 was set in an injection molding machine, and the resin housing 13 of the semiconductor package 10 was molded by injecting a sealing resin. At this time, the portion of the lead 16 on which the LED chip is mounted as the semiconductor element 11 is intentionally exposed in the window portion 19 without being molded with the sealing resin, and the semiconductor element 11 is flip-chip mounted on this portion. did. Finally, the semiconductor element 11 is completely sealed with the transparent resin 14, and the tie bars 24 and 25, which are the connecting portions between the semiconductor package 10 and the outer frame portion 23, are cut to obtain a structure as shown in FIG. Got the product.

In the conventional semiconductor package technology, in order to provide the slit 17 having a width of 0.1 mm without any material sagging or punching failure, it is necessary to make the entire thickness of the lead frame 12 0.07 mm. However, according to the present embodiment, the thickness of the lead frame 12 is 0.07 mm only in the groove portion 18 portion where the slit 17 is formed, that is, the lead 16 portion. Since the portion 15 can have the thickness of the strip 21 of 0.2 mm, it is possible to transmit more heat, and the conventional technique of the method and structure in which the slit 17 is formed by press punching. Compared with the semiconductor package according to the present invention, the heat dissipation performance was remarkably improved.

  Here, as the semiconductor element 11 to be mounted (mounted), for example, since the general size of the LED element is 0.3 mm to 1 mm square, the width of the groove 18 is preferably 0.3 mm or more and 3 mm or less, Further, it is desirable that the width of the slit 17 is 0.1 mm or more and 1 mm or less.

In the above-described embodiment and each example, the groove portions 18 are formed in a row on the strip 21 or the plate material made of copper, copper alloy, or iron alloy, and a row of slits 17 are provided in each groove portion 18 to each lead. 16 is formed, and the semiconductor elements 11 are respectively connected and mounted on the leads 16 arranged in a row, and finally the semiconductor packages 10 arranged and formed in the row are separated to obtain individual packages. However, it is needless to say that the embodiment of the present invention is not limited to this.
In addition to this, for example, as shown in FIGS. 4 and 5, a plurality of grooves 18 are formed in a strip 21 or a plate 26 made of copper, a copper alloy, or an iron alloy, and a slit 17 is formed in each groove 18. To form a so-called light emitting module by connecting and mounting the LED element as the semiconductor element 11 to each of the plurality of rows of leads 16 (without separating each element). Etc. are also possible.

That is, as shown in FIG. 4, a plurality of sets of leads 16 are left so that a plurality of semiconductor elements 11 are mounted on a plate material 26 on which a plurality of rows of groove portions 18 are formed, and outer leads between adjacent elements are also provided. Press punching is performed so that 22 remains as a pattern that is connected in series in an equivalent circuit.
Then, as shown in FIG. 5, the entire portion other than the window portion 19 is molded with the sealing resin 27, the semiconductor element 11 is flip-chip mounted, and the window portion 19 is sealed with the transparent resin 14. By separating the portion 23, a light emitting module can be obtained.

  Alternatively, by changing the pattern of the outer leads 22 or the like, a structure in which a plurality of LED elements (semiconductor elements 11) are connected in parallel, or the plurality of LED elements are individually turned ON / OFF independently. Needless to say, it is possible to have a structure that can be used.

It is a figure which shows the main structures of the semiconductor package which concerns on embodiment of this invention. It is a figure which shows the formation method of the groove part in the semiconductor package shown in FIG. FIG. 2A is a plan view showing a lead frame used in the semiconductor package in the course of manufacturing the semiconductor package according to the embodiment of the present invention, and FIG. As a variation of the semiconductor package according to the embodiment of the present invention, a plan view (a) showing a lead frame used in the light emitting module in the course of manufacture when the light emitting module is manufactured, and an AA sectional view (b) thereof It is. It is the top view (a) which shows the light emitting module produced using the lead frame of FIG. 4, and its AA sectional drawing (b). It is a figure which shows an example of the semiconductor package with which the conventional LED chip was mounted.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor package 11 Semiconductor element 12 Lead frame 13 Resin housing 14 Transparent resin 15 Thick part 16 Lead 17 Slit 18 Groove part 19 Window part 21 Strip 22 Outer lead 24 Tie bar 27 Resin for sealing

Claims (6)

  1. A semiconductor package having a semiconductor element having a bottom electrode for electrical connection and a lead on which the semiconductor element is flip-chip mounted in a state of being connected to the bottom electrode;
    A groove or strip made of copper, a copper alloy or an iron alloy is formed with a groove whose thickness is previously made thinner than other parts, and a slit having a width smaller than the width of the groove is provided in the groove, and the slit The semiconductor package is characterized in that each of the groove portions separated in (1) serves as the lead, and the semiconductor element is mounted so as to straddle the slit.
  2. The semiconductor package according to claim 1,
    The semiconductor package, wherein the groove is formed by cutting with a rotary cutter.
  3. The semiconductor package according to claim 1 or 2,
    A semiconductor package characterized in that the relationship between the plate thickness t of the groove and the slit width s is t ≦ s.
  4. In the semiconductor package according to any one of claims 1 to 3,
    A semiconductor package, wherein the semiconductor element is a light emitting diode.
  5. The semiconductor package according to any one of claims 1 to 4,
    A plurality of the grooves are formed in a strip or plate made of copper, a copper alloy or an iron alloy, the slits are provided in the grooves, and the leads are formed, respectively. .
  6. The semiconductor package according to any one of claims 1 to 5,
    The width of the groove is 0.3 mm or more and 3 mm or less, and the width of the slit is 0.1 mm or more and 1 mm or less.
JP2008180760A 2008-07-10 2008-07-10 Semiconductor package Pending JP2010021374A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098276A (en) * 2008-03-11 2010-04-30 Rohm Co Ltd Semiconductor light emitting device and method for manufacturing the same
WO2013084842A1 (en) * 2011-12-06 2013-06-13 Kato Nobukazu Led package and production method for led package
JP5379320B1 (en) * 2012-10-15 2013-12-25 有限会社 ナプラ Light emitting device
JP2014022491A (en) * 2012-07-17 2014-02-03 Citizen Holdings Co Ltd Semiconductor light-emitting device and manufacturing method of the same
JP2016039321A (en) * 2014-08-08 2016-03-22 株式会社カネカ Lead frame, resin molding, surface-mounted electronic component, surface-mounted light-emitting device, and lead frame manufacturing method
JP2016539508A (en) * 2013-12-06 2016-12-15 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Mounting assembly and light emitting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098276A (en) * 2008-03-11 2010-04-30 Rohm Co Ltd Semiconductor light emitting device and method for manufacturing the same
WO2013084842A1 (en) * 2011-12-06 2013-06-13 Kato Nobukazu Led package and production method for led package
JP2014022491A (en) * 2012-07-17 2014-02-03 Citizen Holdings Co Ltd Semiconductor light-emitting device and manufacturing method of the same
JP5379320B1 (en) * 2012-10-15 2013-12-25 有限会社 ナプラ Light emitting device
JP2016539508A (en) * 2013-12-06 2016-12-15 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Mounting assembly and light emitting device
US10236429B2 (en) 2013-12-06 2019-03-19 Lumileds Llc Mounting assembly and lighting device
JP2016039321A (en) * 2014-08-08 2016-03-22 株式会社カネカ Lead frame, resin molding, surface-mounted electronic component, surface-mounted light-emitting device, and lead frame manufacturing method

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