JP2014099579A - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which maximizes heat radiation effect, increases the luminescence amount, and improves the luminous efficiency.SOLUTION: Conductors 21, 22, which are formed by a metal plate material or an alloy plate material derived from a lead frame, are electrically insulated from each other and integrated by a support medium 23. Both end surfaces of the conductors 21, 22 appear on both surfaces of the support medium 23 when viewed in a thickness direction. A light emitting diode LED is mounted on a substrate 2, and electrode surfaces of a P side electrode 5 and an N side electrode 7 are respectively joined to one end surfaces of the conductors 21, 22.

Description

  The present invention relates to a light emitting device using a light emitting diode.

  Light emitting diodes have the advantages of energy saving and long life, and are attracting attention as light sources such as lighting devices, color image display devices, liquid crystal panel backlights, or traffic signal lights.

  For example, when a blue light emitting diode is taken as an example, as disclosed in Patent Document 1, a buffer layer, an N-type GaN layer, an active layer, a P-type GaN layer, And it has the structure which laminated | stacked the transparent electrode layer etc. in order.

  A P-side electrode is formed on a part of the surface of the transparent electrode layer, and the transparent electrode layer, the P-type GaN layer and a part of the active layer are dry-etched to expose a part of the N-type GaN layer, An N-side electrode is formed on the exposed N-type GaN layer. The part where the part of the N-type GaN layer is exposed is a part where the P-type GaN layer and the active layer do not overlap with the N-type GaN layer, and the other part overlaps. The overlapping portion becomes a light emitting region, and the non-overlapping portion becomes a non-light emitting region. Patent Documents 2 and 3 also disclose similar laminated structures and electrode structures.

  In mounting on a packaging substrate, an LED chip type light emitting diode configured as a flip chip (FC) is conventionally mounted on a sub-mount substrate, and this assembly is further mounted on the packaging substrate. The electrodes formed on the sub-mount substrate and the electrodes formed on the packaging substrate are connected by wire bonding.

  However, this assembly structure increases the cost because a sub-mount substrate made of an expensive material such as AlN must be used. In addition, since it is necessary to connect the electrode formed on the sub-mount substrate and the electrode formed on the packaging substrate by wire bonding, a wire bonding apparatus is required, which increases production equipment costs. , It was passed on to the product cost, leading to high cost of the light emitting device.

  As means for solving the above-mentioned problems, Patent Document 4 discloses that a groove is formed on one surface of a silicon sub-mount, two vias (penetrating electrodes) are formed at the bottom of the groove, and an LED die is formed in the groove. Discloses a method of manufacturing an LED package that is flip-chip mounted and filled with grooves with a protective adhesive.

  In the case of adopting such an LED package structure, conventionally, an electrode (usually a P-side electrode) provided in an overlapping portion of a P-type semiconductor layer, an active layer, and an N-type semiconductor layer is provided as a through electrode provided on the package side. In general, it was adjusted to the area of the end face. For this reason, the current supply area from the P-side electrode to the P-type semiconductor layer is limited to a flat area that is considerably smaller than the overlapping area, and the current viewed at the junction of the P-type semiconductor layer, the active layer, and the N-type semiconductor layer. There is a problem that the density is lowered, and the light emission amount and the light emission efficiency are lowered.

  Further, since the cross-sectional area of the through electrode provided on the packaging substrate side is small, the heat dissipation when used as a package is poor, the temperature of the light emitting diode is increased, and the characteristics are deteriorated. In order to avoid this deterioration of characteristics, the supply current value must be suppressed to a small value, which inevitably results in limitations on the improvement of the light emission amount and the light emission efficiency.

  The electrode (usually the N-side electrode) provided in the non-overlapping portion also employs a structure in which the N-side electrode is joined to the end surface of the through electrode in accordance with the shape of the end surface of the through electrode. The contact area is small. For this reason, even if not as much as in the case of the P-side electrode, the light emission amount and the light emission efficiency are adversely affected. In addition, it becomes difficult to align the N-side electrode and the through electrode, and a slight misalignment is likely to cause poor connection between the two. In order to solve the above-described problems, when the area of the N-side electrode or the through electrode is increased, the width of the non-overlapping portion must be increased, and the area of the overlapping portion that becomes the light emitting region is reduced reflectively, The light emission amount and the light emission efficiency are reduced.

  On the other hand, in the LED package disclosed in Patent Document 5, the electrode area of the light emitting diode is formed large, and each electrode is connected to a plurality of through electrodes, whereby the electrode surface of the light emitting diode and the through electrode are connected. The contact area is increased. The through electrode is formed by electroplating a plurality of vias formed by laser drilling or the like in the substrate body.

  In electroplating, a plating base film must be formed on the inner wall surface of the via. The plating base film is formed by sputtering, for example. However, since the via has a high aspect ratio, the formation of the plating base film inherently involves technical difficulties.

  In addition, irregularities are generated on the inner wall surface of the via formed by laser drilling or the like, and a portion where the plating base film does not adhere is generated due to the irregularities. Therefore, voids are generated around the portion where the plating base film is not applied. This void causes a decrease in the mechanical strength of the entire substrate. Furthermore, since the cross-sectional area of the through electrode is reduced by the void, the electric resistance of the through electrode is increased.

  In addition, unevenness is generated on the outer peripheral surface of the through electrode due to unevenness of the inner wall surface of the via, so that the cross-sectional area of the through electrode becomes uneven in the thickness direction, and the through electrode The conductivity is not uniform in the thickness direction.

  Further, in the region below the electrode of the light emitting diode body, a substrate body is interposed between the through electrodes, and there is a substrate body having the same volume as the through electrode in volume.

  If the volume ratio of the through electrode to the substrate body is improved, the heat dissipation characteristics of the LED package can be improved. However, for this purpose, it is necessary to increase the cross-sectional area of each through electrode. However, in that case, it is necessary to increase the volume of each via, and in electroplating, it takes time to fill the via with a conductive material, resulting in a problem that mass productivity is reduced.

  The LED package disclosed in Patent Document 6 is common to Patent Document 5 in that the electrode area of the light-emitting diode is large, but one electrode has a cross-sectional area approximately equal to the area of the electrode surface. It is different in that it is connected to the through electrode having Even in the structure as in Patent Document 6, the contact area between the electrode surface of the light emitting diode and the through electrode can be improved.

  However, like the through electrode of Patent Document 5, the through electrode of Patent Document 6 is formed by filling a via formed in the substrate body with a conductive material. Therefore, the through electrode not only cannot ensure uniform conductivity in the thickness direction of the substrate, but also has high electrical resistance. Furthermore, there is still room for improvement in the mechanical strength of the entire substrate. Furthermore, it takes a long time to form a through electrode having a large cross-sectional area in the via, and the mass productivity is reduced.

  Furthermore, the other electrode of the light emitting diode of Patent Document 6 is merely connected to a conductive pattern made of copper foil printed on the substrate body. For this reason, the light emitting diode has a small volume ratio of the electrode to the substrate body in the region below the other electrode, leaving room for improvement in the heat dissipation characteristics of the LED package.

JP 2001-210867 A JP 2009-71337 A JP 2008-153634 A JP 2009-111006 A JP 2006-521699 A JP 2002-289923 A

  An object of the present invention is to provide a light-emitting device that maximizes the heat dissipation action, increases the amount of light emission, and improves the light emission efficiency.

  In order to solve the above-described problem, a light emitting device according to the present invention includes a substrate and a light emitting diode. The substrate includes a plurality of conductors, and each of the conductors is made of a metal plate material or an alloy plate material derived from a lead frame, and is electrically insulated while being spaced apart from each other. The light emitting diode is mounted on the substrate, and the electrode surfaces of the P-side electrode and the N-side electrode are joined to one end surfaces of the conductors.

  As described above, in the light emitting device according to the present invention, the substrate on which the light emitting diode is mounted includes a plurality of conductors. Each of the conductors is made of a metal plate material or an alloy plate material derived from a lead frame, and is arranged at an interval to be electrically insulated. Since each of the conductors is made of a metal plate or alloy plate derived from a lead frame, there are less irregularities on the outer peripheral surface than in a through electrode formed by filling a metal material in a via formed in the substrate, and in the thickness direction of the substrate. The conductivity is substantially uniform, the electrical resistance is low, and the mechanical strength of the substrate is improved. In addition, since each of the conductors is made of a metal plate or alloy plate derived from a lead frame, it has excellent heat dissipation characteristics for general light emitting diodes, improves mass productivity of the light emitting device, and provides the light emitting device at low cost. Is possible. In addition, since each of the conductors is electrically insulated from each other, one component is formed for mounting the light emitting diode in a state of being electrically insulated from each other.

  It is preferable that the board | substrate mentioned above contains the support body, the support body is provided in the said space | interval, and has integrated the conductor. By integrating separate conductors with the support, a single unit can be formed, and a light emitting diode can be mounted on the substrate.

  The electrode surfaces of the P-side electrode and the N-side electrode of the light emitting diode are bonded to the conductors with respect to the substrate having the structure described above. Therefore, the conductor serves as a power supply terminal for the P-side electrode and the N-side electrode of the light emitting diode and functions as a heat dissipation path for the light emitting diode. The heat radiation path formed in this way is filled with a conductive paste containing a conventional Ag powder, a heat transfer via conductor (Patent Document 1), a solder-filled thermal via after plating (Patent Document 2), and a silver paste. In addition, a heat conductor using a metal powder-containing resin such as a copper paste, a composite of a metal rod and a metal powder-containing resin (Patent Document 3), and a thermal via using a metal such as Cu and Ni (Patent Document 4) ), The structure is simple, manufacture and assembly are easy, and the heat dissipation characteristics are excellent.

  In the present invention, the conductor can be composed of Cu, Sn, Al, or an alloy containing these. These materials are excellent in electric conductivity and heat conduction characteristics, and are also excellent in spreadability, and can be easily processed into a necessary surface shape.

  It is necessary to increase the heat capacity of the conductor from the viewpoint of improving its heat dissipation characteristics. In consideration of the actual heat dissipation amount of the light emitting diode, the conductor preferably has a thickness of 400 μm or more. However, from the viewpoint of avoiding an increase in the overall thickness, it is preferable to suppress the maximum thickness to 1 mm. Furthermore, in order to improve the heat dissipation characteristics, the conductor preferably covers 80% or more of the plane area of each of the electrode surface of the P-side electrode and the electrode surface of the N-side electrode.

  Since the electrode surfaces of the P-side electrode and the N-side electrode of the light emitting diode are joined to the respective one end faces of the conductors provided on the substrate, they can be connected by a flip-chip method and adopt a wire bonding structure. There is no need. In this invention, a conductor consists of a 1st conductor and a 2nd conductor, and the 1st conductor is connected to the P side electrode of one light emitting diode per, and the 2nd conductor is per one. A structure in which the N-side electrode of one light-emitting diode is connected can be employed. With such a structure, the light emitting diodes LED can be driven individually or in any combination.

  In the present invention, the conductor is provided with a P-side lead frame and an N-side lead frame, and each P-side lead frame is connected to one or more P-side electrodes of light-emitting diodes. The N-side lead frame can also adopt a structure in which one or more N-side electrodes of light-emitting diodes are connected to each other. With such a structure, the light emitting diodes can be controlled collectively to emit light with a simple wiring structure in which the P-side lead frame L and the N-side lead frame are connected to one power source. Furthermore, the light emitting diode can be controlled to emit light in a certain unit.

  Various types of light emitting diodes can be used. Among them, a light emitting diode having a preferable form in combination with a substrate structure is a type in which a P-type semiconductor layer and an N-type semiconductor layer have a portion that overlaps and a portion that does not overlap each other. The non-overlapping portion is disposed on the side of the overlapping portion, and the width taken in the arrangement direction is sufficiently narrower than the overlapping portion and extends in the length direction. The one electrode is one surface of the P-type semiconductor layer and the N-type semiconductor layer and covers the overlapping portion. The other electrode is provided on the other semiconductor layer and covers the non-overlapping portion.

  Preferably, the other electrode (for example, the N-side electrode) covers most of the non-overlapping portion and is insulated from one semiconductor layer (for example, the P-type semiconductor layer) and one electrode (for example, the P-side electrode). One electrode (for example, the P-side electrode) covers the entire surface of one semiconductor layer (for example, the P-type semiconductor layer) except for the portion of the insulating gap.

  According to the above configuration, the current supply area from the P-side electrode to the P-type semiconductor layer is expanded to the same area as the overlapping area. For this reason, the current density seen at the junction of the P-type semiconductor layer, the active layer, and the N-type semiconductor layer is greatly improved, and the light emission amount and the light emission efficiency are also improved. The area of one electrode (eg, the P-side electrode) can be maximized by minimizing the width of the insulating gap to the dimensions required for electrical insulation.

  Moreover, the cross-sectional area of the through electrode provided on the package side is expanded to the area of one maximized electrode (for example, the P-side electrode), and the heat sink effect by the one electrode (for example, the P-side electrode) and the through electrode (Heat dissipation characteristics) can be maximized.

  Since the other electrode (for example, the N-side electrode) is provided in a non-overlapping portion, the non-overlapping portion can be narrowed to increase the electrode area while avoiding a decrease in the light emitting area in the overlapping portion. it can. That is, the electrode area can be expanded by extending the other electrode (for example, the N-side electrode) in the length direction orthogonal to the width. For this reason, it is possible to increase the light emission amount and improve the light emission efficiency, and to avoid poor connection due to misalignment.

  In the light emitting device according to the present invention, the light emitting diode may be single or plural. Each of the plurality of light emitting diodes is arranged, for example, in rows and columns on the substrate. Thereby, a surface emitting light-emitting device is realized.

  The light emitting device according to the present invention is used for a lighting device, a backlight for a liquid crystal display, a display device or a signal lamp.

  Furthermore, the present invention also discloses a method for manufacturing the above-described light emitting device. This manufacturing method includes the following steps (a) and (b).

(A) preparing a plate-like conductor;
(B) A light emitting diode is mounted on the conductor, and the electrode of the light emitting diode is joined to the conductor.

  With such a manufacturing method, the conductor can be directly prepared as a lead frame, and it is not necessary to fill the vias drilled in the substrate with a conductive material by electroplating. The light emitting device can be provided at low cost.

  Further, the conductor has less unevenness on the outer peripheral surface than the through electrode formed by filling the via formed in the substrate body with a metal material, and the conductivity in the thickness direction becomes substantially uniform. Furthermore, since the conductor has less irregularities on the outer peripheral surface, the reduction of the cross-sectional area is suppressed, so that the electrical resistance is low and the mechanical strength of the entire substrate can be increased. Furthermore, by using a lead frame, a light emitting device having excellent heat dissipation characteristics can be provided.

  The manufacturing method according to the present invention includes a first conductor and a second conductor as a light emitting device by including the following step (c), and each first conductor is on the P side of one light emitting diode. It is possible to manufacture a light-emitting device having a structure in which electrodes are connected and the second conductor is connected to the N-side electrode of one light-emitting diode.

(C) The conductor is a lead frame having a through hole, and the light emitting diode is mounted on the conductor so as to straddle the through hole.

  In addition, the manufacturing method according to the present invention includes the following steps (d) and (e), whereby a P-side lead frame and an N-side lead frame are provided side by side as a light emitting device. A light-emitting device having a structure in which one or more P-side electrodes of light-emitting diodes are connected to each other, and an N-side lead frame is connected to one or more N-side electrodes of one or more light-emitting diodes. Can be manufactured.

(D) The conductor is a lead frame, a plurality of the conductors are prepared, and each of the conductors is provided with a gap therebetween,
(E) A light emitting diode is mounted on the conductor so as to straddle the gap.

  As described above, according to the present invention, it is possible to provide a light emitting device that maximizes the heat radiation effect, increases the light emission amount, and improves the light emission efficiency.

  Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings. The accompanying drawings are merely examples.

It is sectional drawing which shows the light-emitting device based on this invention. FIG. 2 is a sectional view taken along line 2-2 of FIG. FIG. 3 is a sectional view taken along line 3-3 in FIG. 1. It is sectional drawing which shows an example of the light emitting diode used for the light-emitting device which concerns on this invention. FIG. 5 is a bottom view of the light emitting diode shown in FIG. 4. It is sectional drawing which shows an example of the light emitting diode used for the light-emitting device which concerns on this invention. FIG. 7 is a bottom view of the light emitting diode shown in FIG. 6. It is sectional drawing which shows another example of the light-emitting device which concerns on this invention. It is sectional drawing which shows another example of the light-emitting device which concerns on this invention. FIG. 10A is a cross-sectional view illustrating still another example of the light-emitting device according to the present invention, FIG. 10A is a diagram illustrating a completed state, and FIG. 10B is a diagram in which a support is omitted. It is sectional drawing which shows another example of the light-emitting device which concerns on this invention. 12A and 12B are diagrams illustrating a method for manufacturing a light-emitting device according to the present invention, in which FIG. 12A is a plan view, and FIG. 12B is a cross-sectional view taken along line BB in FIG. 13A and 13B are views showing a step after the step shown in FIG. 12, in which FIG. 13A is a plan view, and FIG. 13B is a partial cross-sectional view along the line BB in FIG. 14A and 14B are diagrams illustrating a process subsequent to the process illustrated in FIG. 13, in which FIG. 14A is a plan view, and FIG. 14B is a partial cross-sectional view taken along line BB in FIG. FIG. 15A is a plan view and FIG. 15B is a cross-sectional view taken along line BB in FIG. 15A, illustrating another method for manufacturing a light-emitting device according to the present invention. 16A and 16B are views showing a step after the step shown in FIG. 15, in which FIG. 16A is a plan view, and FIG. 16B is a partial cross-sectional view along the line BB in FIG. FIG. 17A is a diagram showing a step after the step shown in FIG. 16, in which FIG. 17A is a plan view, and FIG. 17B is a partial cross-sectional view along the line BB in FIG. It is a figure which shows another manufacturing method of the light-emitting device which concerns on this invention. It is a figure which shows the process after the process shown in FIG. It is a figure which shows another manufacturing method of the light-emitting device which concerns on this invention. It is a figure which shows the process after the process shown in FIG. FIG. 22 is a diagram showing a step after the step shown in FIG. 21. It is a figure which shows another manufacturing method of a light-emitting device, Comprising: FIG. 23 (A) is a top view, FIG.23 (B) is the BB sectional drawing of FIG.23 (A). FIG. 24A is a diagram showing a step after the step shown in FIG. 23, and FIG. 24A is a cross-sectional view and FIG. 24B is a plan view. It is a figure which shows another manufacturing method of a light-emitting device, Comprising: FIG. 25 (A) is a top view, FIG.25 (B) is the BB sectional drawing of FIG. 23 (A). 26A and 26B are views showing a step after the step shown in FIG. 25, in which FIG. 26A is a plan view and FIG. 26B is a cross-sectional view. 27A and 27B are diagrams illustrating a process subsequent to the process illustrated in FIG. 26, in which FIG. 27A is a plan view and FIG. 27B is a cross-sectional view.

  1 to 3, a light emitting device in which a light emitting diode LED is mounted on a substrate 2 is illustrated. As shown in FIGS. 4 and 5, the light emitting diode LED is a PN in which a P-type semiconductor layer 11 and an N-type semiconductor layer 13 are stacked on the other surface of the transparent crystal layer 3 opposite to the light emitting surface 30. A junction 1 is included. An active layer 12 is provided between the P-type semiconductor layer 11 and the N-type semiconductor layer 13. The transparent crystal layer 3 is typically sapphire, and one surface thereof becomes the light emitting surface 30. The transparent crystal layer 3 preferably has a layer thickness in the range of 3 μm to 200 μm. A buffer layer (not shown) is provided on one surface of the transparent crystal layer 3, and the PN junction 1 is grown on the transparent crystal layer 3 through the buffer layer.

  The P-type semiconductor layer 11 and the N-type semiconductor layer 13 constituting the PN junction 1 are well known in the light emitting diode LED. Typically, a III-V compound semiconductor is used. However, it is possible to include not only known techniques but also compound semiconductors that may be proposed in the future. In the present invention, the light emitting diode LED may be any one of a red light emitting diode, a green light emitting diode, a blue light emitting diode, and an orange light emitting diode, or a white light emitting diode. In these light emitting diodes, a semiconductor material constituting the PN junction 1 and a manufacturing method thereof are already known.

  The light-emitting diode LED according to the present invention includes a P-side electrode 5 of the P-type semiconductor layer 11 and an N-side electrode 7 of the N-type semiconductor layer 13 together with the PN junction 1 formed by the P-type semiconductor layer 11 and the N-type semiconductor layer 13. Contains. The P-side electrode 5 and the N-side electrode 7 are flip-chip connected to the first conductor 21 and the second conductor 22 provided on the substrate 2 and are opposite to the light emitting surface 30. It is provided on the side surface.

  Of the P-side electrode 5 and the N-side electrode 7, the P-side electrode 5 is provided on the surface of the P-type semiconductor layer 11 located on the side opposite to the light emitting surface 30. The P-side electrode 5 covers almost the entire surface of the P-type semiconductor layer 11 except for the insulating gap G1. “Substantially the entire surface” means that, for example, 80% or more of the surface area of the P-type semiconductor layer 11 is covered. Preferably, the P-side electrode 5 covers the entire surface of the P-type semiconductor layer 11 except for the portion of the insulating gap G1.

  On the other hand, the N-side electrode 7 fills a non-overlapping portion 14 formed by cutting out the P-type semiconductor layer 11 and the active layer 12 and is provided in the N-type semiconductor layer 13. Preferably, the N-side electrode 7 covers most of the non-overlapping portion 14. The non-overlapping portion 14 is filled with an electrical insulating layer 9 that electrically insulates the N-side electrode 7 from the P-type semiconductor layer 11 and the active layer 12. The electrical insulating layer 9 also covers the surface of the P-type semiconductor layer 11 exposed between the N-side electrode 7 and the P-side electrode 5, and the N-side electrode 7 is located in the portion 14 where it does not overlap with the P-type semiconductor layer 11. The P-side electrode 7 is electrically insulated by an insulation gap G1.

  The P-type semiconductor layer 11 and the N-type semiconductor layer 13 are overlapped with each other through the active layer 12 except for a portion 14 that does not overlap, and the overlapping portion becomes a light emitting region. The width W1 of the N-side electrode 7 viewed in the arrangement direction of the N-side electrode 7 and the P-side electrode 5 is significantly smaller than the width W2 of the P-side electrode 5 (see FIGS. 4 and 5). For example, the ratio of the width W1 to the width W2 can be selected in the range of 1 to 40%. In the embodiment, the length L1 orthogonal to the width direction is substantially equal for both the N-side electrode 7 and the P-side electrode 5.

  The electrical insulating layer 9 may be either an organic insulating layer or an inorganic insulating layer. The N-side electrode 7 can be formed by a plating method, a molten metal filling method, a fluid conductive material embedding method, or the like. In this embodiment, the non-overlapping portion 14 is formed over the entire length of the PN junction 1, but may be provided in an intermediate portion in the length direction. Further, the shape is not limited to the belt shape, but may be other shapes.

  The substrate 2 on which the light emitting diode LED is mounted includes a first conductor 21, a second conductor 22, and a support body 23. The first conductor 21 and the second conductor 22 are spaced apart from each other to form an insulating gap G1 and are integrated by the support body 23. In other words, the support body 23 is provided in the insulating gap G1, and the first conductor 21 and the second conductor 22 are integrated. That is, since the separate first conductor 21 and second conductor 22 are originally integrated by the support body 23 to form a single unit, the light emitting diode LED can be mounted on the substrate 2. Moreover, each of the first conductor 21 and the second conductor 22 is electrically insulated from each other by the support 23 in a state of being spaced apart from each other. The substrate 2 is configured.

  The substrate 2 has a light emitting diode mounting region S1 on one surface, and end surfaces of the first conductor 21 and the second conductor 22 provided in the thickness direction are exposed in the surface of the light emitting diode mounting region S1. The area of the end surface of the first conductor 21 is substantially the same as the electrode area of the P-side electrode 5. The same applies to the second conductor 22, and the area of the end face is substantially the same as the electrode area of the N-side electrode 7. The first conductor 21 and the second conductor 22 are electrodes provided on the substrate 1. The first conductor 21 and the second conductor 22 are made of metal or alloy material. Specifically, Cu, Sn, Al, or an alloy containing these can be used. These materials are excellent in electric conductivity and heat conduction characteristics, and are also excellent in spreadability, and can be easily processed into a necessary surface shape. Both surfaces in the thickness direction of the first conductor 21 and the second conductor 22 may be flat surfaces, or may be uneven surfaces in consideration of mounting of the light-emitting diode LED and board mounting. Specifically, the 1st conductor 21 and the 2nd conductor 22 can be comprised using what processed the metal or alloy board | plate material mentioned above.

  The first conductor 21 and the second conductor 22 are, in particular, a metal plate material or alloy plate material derived from a lead frame. Lead frames have excellent mechanical strength, electrical conductivity, thermal conductivity, corrosion resistance, and heat resistance, depending on the material. Generally, the lead frame is rolled, punched or etched into the conductive material. It is formed and is a plate material having a thickness of about 0.1 to 1 mm. Depending on the form of processing, the lead frame has a small unevenness on the outer peripheral surface and is substantially flat.

  In general, the outer peripheral surface of the lead frame is flatter, that is, has less irregularities than the outer peripheral surface of a through electrode formed by filling a via formed in the substrate body with a metal material. Furthermore, the lead frame is considerably thicker than the thickness of the light emitting diode LED, and has excellent heat dissipation characteristics for the light emitting diode.

  Specifically, the first conductor 21 and the second conductor 22 are a lead frame cut or the lead frame itself. Specific examples thereof will be described in detail later with reference to FIGS. 12 to 22. Since the first conductor 21 and the second conductor 22 are made of a metal plate material or alloy plate material derived from a lead frame, they are drilled in the substrate. Compared to the through-electrodes in which the vias are filled with a metal material, the outer peripheral surface has less irregularities, the conductivity in the thickness direction of the substrate 2 is substantially uniform, the electrical resistance is low, and the mechanical strength of the substrate 2 is improved. Let

  Further, since the first conductor 21 and the second conductor 22 are made of a metal plate material or alloy plate material derived from a lead frame, the first conductor 21 and the second conductor 22 are considerably thicker than a general light emitting diode LED. The heat radiation characteristic for a general light-emitting diode LED mounted on 22 is excellent. Furthermore, since the first conductor 21 and the second conductor 22 are made of a metal plate or alloy plate derived from a lead frame, it is possible to improve the mass productivity of the light emitting device and to provide the light emitting device at low cost.

  The first conductor 21 and the second conductor 22 need to have a large heat capacity from the viewpoint of improving their heat dissipation characteristics. Considering the actual heat radiation amount of the light emitting diode LED, it is preferable that the first conductor 21 and the second conductor 22 have a thickness T1 (see FIG. 1) of 400 μm or more. However, from the viewpoint of avoiding an increase in the overall thickness, it is preferable to suppress the maximum thickness to 1 mm. When the first conductor 21 and the second conductor 22 are mounted with a general thin type light emitting diode LED having a thickness of about 0.1 to 0.2 mm by setting the thickness T1 in a range of 400 μm to 1 mm, The thickness is several times the thickness of the light emitting diode LED, and the heat dissipation characteristics for the light emitting diode LED are improved. However, since the end surfaces of the first conductor 21 and the second conductor 22 are exposed in the surface of the light emitting diode mounting region S1 of the substrate 2, the thickness of the first conductor 21 and the second conductor 22 is the thickness of the support 23. It is set above.

  The support 23 can be made of an organic insulating material, an inorganic insulating material, or a composite insulating material thereof. From the viewpoint of moldability, an organic insulating material is preferable. Organic insulating materials include phenolic resin, epoxy resin, urea resin, nylon, polycarbonate resin, polybutylene terephthalate, polyacetal resin, polyphenylene sulfide resin, liquid crystal polymer, polyethersulfone resin, polyetherimide resin, and various engineering plastics. Can be illustrated.

  The electrode surfaces of the P-side electrode 5 and the N-side electrode 7 of the light emitting diode LED are joined to the first conductor 21 and the second conductor 22, respectively. That is, the P-side electrode 5 and the N-side electrode 7 are bonded by the bonding material after being in surface contact with the end surfaces of the first conductor 21 and the second conductor 22. The first electrode 21 and the P-side electrode 5, and the second electrode 22 and the N-side electrode 7 can be bonded by an Au—Sn bonding material, a solder paste, an Ag paste, a Cu diffusion paste, or the like.

  As described above, in the light-emitting device according to the present invention, the P-side electrode 5 and the N-side electrode 7 of the light-emitting diode LED are on the surface opposite to the light emitting surface 30. 7 does not reduce the product of the light exit surface 30. Therefore, it is possible to realize a light emitting diode LED having a large light emission amount and high light emission efficiency, and can be connected to the first conductor 21 and the second conductor 22 of the substrate 2 by a flip chip method, There is no need to adopt a wire bonding structure.

  Further, since the P-side electrode 5 covers almost the entire surface of the P-type semiconductor layer 11, the current supply area from the P-side electrode 5 to the P-type semiconductor layer 11 is expanded. For this reason, the current density seen at the junction of the P-type semiconductor layer 11, the active layer 12, and the N-type semiconductor layer 13 is greatly improved, and the light emission amount and the light emission efficiency are improved. The area of the P-side electrode 5 can be maximized by minimizing the width of the insulation gap G1 to the size required for electrical insulation.

  Since the electrode surfaces of the P-side electrode 5 and the N-side electrode 7 of the light emitting diode LED are joined to the first conductor 21 and the second conductor 22, respectively, the first conductor 21 and the second conductor 22 are connected to the light emitting diode LED. The power supply terminal for the P-side electrode 5 and the N-side electrode 7 and functions as a heat dissipation path for the light emitting diode LED. The heat radiation path formed in this way is filled with a conductive paste containing a conventional Ag powder, a heat transfer via conductor (Patent Document 1), a solder-filled thermal via after plating (Patent Document 2), and a silver paste. In addition, a heat conductor using a metal powder-containing resin such as a copper paste, a composite of a metal rod and a metal powder-containing resin (Patent Document 3), and a thermal via using a metal such as Cu and Ni (Patent Document 4) ), The structure is simple, manufacture and assembly are easy, and excellent heat dissipation characteristics can be secured.

  Various types of light emitting diode LED can be used. In the embodiment shown in FIGS. 1 to 5, the light emitting diode LED has a portion where the P-type semiconductor layer 11 and the N-type semiconductor layer 13 constituting the PN junction 1 overlap each other and a portion 14 where they do not overlap each other. The non-overlapping portion 14 is arranged on the side of the overlapping portion, and the width W1 taken in the arrangement direction is sufficiently narrower than the width W2 of the overlapping portion and extends in the length direction (perpendicular to the width direction). ing. For example, the ratio of the width W1 to the width W2 is selected in the range of 1 to 40%. The P-side electrode 5 is a surface of the P-type semiconductor layer 11 and covers an overlapping portion, and the N-side electrode 7 covers the N-type semiconductor layer 13 in a portion 14 that does not overlap. The plane areas of the P-side electrode 5 and the N-side electrode 7 are preferably determined to be 80% or more of the plane area of the overlapping portion and the non-overlapping portion 14.

  According to the above configuration, the current supply area from the P-side electrode 5 to the P-type semiconductor layer 11 is expanded to the same area as the overlapping area. For this reason, the current density seen at the junction of the P-type semiconductor layer 11, the active layer 12, and the N-type semiconductor layer 13 is greatly improved, and the light emission amount and the light emission efficiency are also improved. The area of the P-side electrode 5 can be maximized by minimizing the width of the insulating gap to the size required for electrical insulation.

  In addition, the cross-sectional area of the through electrode provided on the package side is expanded to the area of one of the maximized electrodes, for example, the P-side electrode 5, and the heat dissipation characteristics by the P-side electrode 5 and the first conductor 21 are maximized. can do.

  Since the other electrode, for example, the N-side electrode 7 is provided in the non-overlapping portion 14, the non-overlapping portion 14 is narrowed to increase the electrode area while avoiding a decrease in the light emitting area in the overlapping portion. be able to. That is, with respect to the N-side electrode 7, the electrode area can be expanded by extending the length L1 orthogonal to the width D1. For this reason, it is possible to increase the light emission amount and improve the light emission efficiency, and to avoid poor connection due to misalignment.

  6 and 7 show another example of the light emitting diode according to the present invention. In this embodiment, the non-overlapping portion 14 is formed in a groove shape and filled with an N-side electrode. In the case of this embodiment, the same operational effects as those of the embodiment shown in FIGS.

  As shown in FIG. 8, the first conductor 21 and the second conductor 22 can have a larger planar area than that of the P-side electrode 5 and the N-side electrode 7. You can also. However, in the case of reducing the size, it is necessary to place a restriction such as 80% reduction as a limit so as not to adversely affect the heat dissipation characteristics. The first conductor 21 covers 80% or more of the plane area of the electrode surface of the P-side electrode 5, and the second conductor 22 covers 80% or more of the plane area of the electrode surface of the N-side electrode 7. In the lower region of the electrode 5 and the N-side electrode 7, the volume ratio of the first conductor 21 and the second conductor 22 to the substrate 2 is increased, and the substrate 2 is almost entirely in the lower region facing the light emitting diode LED. 21 and the second conductor 22 are occupied and excellent in heat dissipation characteristics. In the light emitting device according to the present invention, the light emitting diode LED may be single or plural. For example, as shown in FIG. 9, a plurality of n light emitting diodes LED11 to LED1n can be arranged on the substrate 2 in, for example, rows and columns. Thereby, a surface emitting light-emitting device is realized.

 The light emitting diodes LED11 to LED1n are preferably electrically independent from each other. That is, the P-side electrode 5 and the first conductor 21, and the N-side electrode 7 and the second conductor 22 are electrically independent from each other for each of the light emitting diodes LED11 to LED1n. That is, one P-side electrode 5 of the light emitting diodes LED11 to LED1n is connected to each first conductor 21, and any one of the light emitting diodes LED11 to LED1n is also connected to the second conductor 22. One N-side electrode 5 is connected. With such a structure, each of the light emitting diodes LED11 to LED1n can be driven individually or in any combination, and thus can be used for various applications.

  10 and 11 are diagrams showing another embodiment of the light emitting device according to the present invention. First, in the embodiment shown in FIGS. 10A and 10B, a P-side frame FR1 and an N-side frame FR2 are provided side by side, and a plurality of light emitting diodes LED1˜ The LED 4 is mounted. A first conductor 21 is disposed along the length direction of the inner end edge of the P-side frame FR1 with a space therebetween, and the first conductor 21 is disposed at the inner end edge of the N-side frame FR2. A second conductor 22 facing each other with a gap is formed. More specifically, a P-side lead frame LF1 in which the first conductor 21 and the P-side frame FR1 are integrated, and an N-side lead frame LF2 in which the second conductor 22 and the N-side frame FR2 are integrated with a gap therebetween. It is attached. The P-side electrode 5 of the light emitting diodes LED1 to LED4 is connected to the first conductor 21 formed on the P-side frame FR1, and the N-side electrode 7 of the N-side frame FR2 is joined to the second conductor 22. The P-side frame FR1 and the N-side frame FR2 are preferably integrated by an insulative support 23 that is filled at intervals generated in each of the light emitting diodes LED1 to LED4. However, the insulating support 23 can be omitted. With such a structure, the light emitting diodes LED1 to LED4 can be collectively controlled to emit light with a simple wiring structure in which the P-side lead frame LF1 and the N-side lead frame LF2 are connected to one power source. .

  In FIG. 10, the number of light emitting diodes mounted on the P-side lead frame LF1 and the N-side lead frame LF2 can be arbitrarily set as long as it is 1 or more, and is not limited to the number shown. .

  Next, FIG. 11 shows a further increase in the frame arrangement and the light emitting diode arrangement shown in FIG. Although illustration is omitted, a larger number of arrangements may be used. Referring to FIG. 11, a P-side frame FR11, an N-side frame FR21, a P-side frame FR12, and an N-side frame FR22 are sequentially provided. More specifically, the P-side lead frame LF11 in which the P-side frame FR11 and the first conductor 21 are integrated, the N-side lead frame LF21 in which the N-side frame FR21 and the second conductor 22 are integrated, the P-side frame FR12, and the first A P-side lead frame LF12 in which one conductor 21 is integrated, and an N-side lead frame LF22 in which an N-side frame FR22 and a second conductor 22 are integrated are sequentially provided.

  Light emitting diodes LED11 to LED14 are mounted between the P-side frame FR11 and the N-side frame FR21. The P-side electrode 5 of the light emitting diodes LED11 to LED14 is connected to the first conductor 21 provided on the P-side frame FR11, and the N-side electrode 7 is connected to the second conductor 22 provided on the N-side frame FR21. Yes. That is, the P-side lead frame LF11 is connected to the respective P-side electrodes 5 of the light-emitting diodes LED11 to LED14, and the N-side lead frame LF21 is connected to the respective N-side electrodes 7 of the light-emitting diodes LED11 to LED14. Yes.

  Light emitting diodes LED21 to LED24 are mounted between the P-side frame FR12 and the N-side frame FR21. The P-side electrode 5 of the light emitting diodes LED21 to LED24 is connected to the first conductor 21 provided on the P-side frame FR12, and the N-side electrode 7 is connected to the second conductor 22 provided on the N-side frame FR21. . That is, the P-side electrode 5 is connected to the P-side lead frame LF12, and the N-side electrode 7 of the light-emitting diodes LED21 to LED24 is connected to the N-side lead frame LF21. Yes.

  Light emitting diodes LED31 to LED34 are mounted between the P-side frame FR12 and the N-side frame FR22. The P-side electrode 5 of the light emitting diodes LED31 to LED34 is connected to the first conductor 21 provided on the P-side frame FR12, and the N-side electrode 7 is connected to the second conductor 22 provided on the N-side frame FR22. Yes. That is, the P-side lead frame LF12 is connected to the P-side electrodes 5 of the light-emitting diodes LED31 to LED34, and the N-side lead frame 22 is connected to the N-side electrodes 7 of the light-emitting diodes LED31 to LED34. Yes.

  In short, the P-side lead frames LF11 and LF12 are connected to one or more P-side electrodes of light-emitting diodes, and the N-side lead frames LF21 and LF22 are N-side electrodes of one or more light emitting diodes are connected.

  With such a structure, the light emitting diodes LED11 to LED34 can be controlled to emit light in a unit of the light emitting diodes LED11 to 14, the light emitting diodes LED21 to 24, and the light emitting diodes LEDs 31 to 34.

  In FIG. 11, the number of P-side lead frames, the number of N-side lead frames, and the number of light-emitting diodes mounted on each lead frame can be arbitrarily set to 1 or more, and are limited to the number shown. It is not a thing.

  Next, a method for manufacturing a light emitting device according to the present invention will be described with reference to FIGS. First, FIGS. 12 to 14 show a method suitable for manufacturing the light emitting device shown in FIGS. Referring to FIG. 12, a first conductor 210 and a second conductor 220 are arranged with a gap G31 between a first frame FR1 and a second frame FR2 arranged in parallel with a gap.

  Both ends of the first conductor 210 are connected to the first frame FR1 and the second frame FR2 by connecting pieces 211 and 212. The connecting pieces 211 and 212 are separated by gaps G11 and G12 and are narrowed. The second conductor 220 is connected to the first frame FR1 and the second frame FR2 at both ends by connecting pieces 221 and 222. The second conductor 220 and the connecting pieces 221 and 222 are separated from the first conductor 210 and the connecting pieces 211 and 212 by the gap G21 and are narrowed.

  More specifically, a plate-like conductor in which the first frame FR1, the second frame FR2, the first conductor 210, the second conductor 220, and the connecting pieces 211, 212, 221, 222 are integrated, that is, a lead frame. Prepare LF1. The lead frame LF1 has a plurality of through holes on the plate surface, and the gaps G11, G12, G21 and the gap G31 correspond to the through holes. In this case, the first conductor 210 and the second conductor 220 can be directly prepared as the lead frame LF1, and it is not necessary to fill the vias drilled in the substrate with a conductive material by electroplating. The mass productivity of the light-emitting device can be improved and the light-emitting device can be provided at low cost.

  Next, as shown in FIG. 13, the light emitting diodes LED1 to LED4 are mounted on the first conductor 210 and the second conductor 220 of the frame shown in FIG. 12 so as to straddle the gap G21. The P-side electrode 5 and the N-side electrode 7 of the LED 4 are joined to the first conductor 210 and the second conductor 220.

  Next, as shown in FIG. 14, the first conductor 210 and the second conductor 220 are molded using an insulating material 230 that serves as a support. More specifically, gaps G11, G12, and G21 generated around the first conductor 210 and the second conductor 220 are filled with a support 230 made of an insulating material by molding. The molding may be performed before the light emitting diodes LED1 to LED4 are mounted on the first conductor 210 and the second conductor 220.

  Thereafter, the connecting pieces 211 and 212 connected to the first conductor 210 and the connecting pieces 221 and 222 connected to the second conductor 220 are cut along the cutting line C1-C1 and the cutting line set in the vicinity of the support 230 made of molding resin. Cut along line C2-C2. Thereby, the heat generating apparatus shown in FIGS. 1-8 is obtained.

  The outer peripheral surface of the lead frame LF1 is flatter, that is, has less irregularities than the outer peripheral surface of the through electrode formed by filling a via formed in the substrate body with a metal material. Although not clearly shown in the illustrated range, the lead frame LF1 is considerably thicker than the thickness of the light emitting diodes LED1 to LED4, and has excellent heat dissipation characteristics for the light emitting diodes LED1 to LED4.

  Therefore, according to such a manufacturing method, the first conductor 210 and the second conductor 220 are provided on the outer peripheral surface rather than the through electrode formed by filling the via material formed in the substrate body with the metal material. Unevenness is reduced, and the conductivity in the thickness direction is substantially uniform. In addition, since the first conductor 210 and the second conductor 220 have less unevenness on the outer peripheral surface, voids are less likely to occur between the support 230 and the reduction of the cross-sectional area is suppressed. The electrical resistance is low, and the mechanical strength of the entire substrate can be increased.

  Furthermore, although not explicitly shown in the illustrated range, the first conductor 210 and the second conductor 220 are considerably thicker than the thickness of the light emitting diodes LED1 to LED4. As a result, a light emitting device having excellent heat dissipation characteristics can be provided.

  12 to 14, the number of light emitting diodes mounted on the lead frame LF1 can be arbitrarily set, and is not limited to the illustrated number.

  FIG. 17 shows a method of manufacturing the light emitting device shown in FIG. In this embodiment, light emitting diodes LED1 to LED4 are mounted on the first conductor 210 and the second conductor 220 using the first frame FR1 and the second frame FR2 shown in FIG.

  More specifically, a plate-like conductor in which the first frame FR1, the second frame FR2, the first conductor 210, the second conductor 220, and the connecting pieces 211, 212, 221, 222 are integrated, that is, a lead frame. Prepare LF1. The lead frame LF1 has a plurality of through holes on the plate surface, and the gaps G11, G12, G21 and the gap G31 correspond to the through holes. Also in this case, the first conductor 210 and the second conductor 220 can be directly prepared as the lead frame LF1, and it is not necessary to fill the vias drilled in the substrate with a conductive material by electroplating. Thus, mass productivity of the light emitting device can be improved and the light emitting device can be provided at low cost.

  Then, the first conductor 210 and the second conductor 220 on which the light-emitting diodes LED1 to LED4 are mounted are integrally molded with a common insulating material to form the support 230. Also in this case, the molding of the support 230 can be performed before or after the light emitting diodes LED1 to LED4 are mounted on the first conductor 210 and the second conductor 220.

  Thereafter, the heat generating device shown in FIG. 9 is obtained by cutting along the cutting lines C1-C1 and C2-C2.

  The outer peripheral surface of the lead frame LF1 is flatter, that is, has less irregularities than the outer peripheral surface of the through electrode formed by filling a via formed in the substrate body with a metal material. Although not clearly shown in the illustrated range, the lead frame LF1 is considerably thicker than the thickness of the light emitting diodes LED1 to LED4, and has excellent heat dissipation characteristics for the light emitting diodes LED1 to LED4.

  Therefore, according to such a manufacturing method, the first conductor 210 and the second conductor 220 are provided on the outer peripheral surface rather than the through electrode formed by filling the via material formed in the substrate body with the metal material. Unevenness is reduced, and the conductivity in the thickness direction is substantially uniform. In addition, since the first conductor 210 and the second conductor 220 have less unevenness on the outer peripheral surface, voids are less likely to occur between the support 230 and the reduction of the cross-sectional area is suppressed. The electrical resistance is low, and the mechanical strength of the entire substrate can be increased.

  Furthermore, although not explicitly shown in the illustrated range, the first conductor 210 and the second conductor 220 are considerably thicker than the thickness of the light emitting diodes LED1 to LED4. As a result, a light emitting device having excellent heat dissipation characteristics can be provided.

  15 to 17, the number of light-emitting diodes mounted on the lead frame L1 can be arbitrarily set, and is not limited to the number shown.

  18 to 19 are views showing a method of manufacturing the light emitting device shown in FIG. First, as shown in FIG. 18, the P-side frame FR1 and the N-side frame FR2 are provided side by side with a gap G21 therebetween. A first conductor 210 is disposed along the length direction of the inner end edge of the P-side frame FR1 with a gap G41, and an inner end edge of the N-side frame FR2 is provided with the first conductor 210. A second conductor 220 is formed facing each other across the gap G21. Each of the plurality of second conductors 220 is separated from each other by a gap G42 provided at the inner end edge of the N-side frame FR2.

  More specifically, a plate-like conductor obtained by integrating the P-side frame FR1 and the first conductor 210, that is, a plate-like shape obtained by integrating the P-side lead frame LF11 and the N-side frame FR2 and the second conductor 220. The N-side lead frame LF21 is prepared, and the P-side lead frame 11 and the N-side lead frame 21 are provided with a gap G21 therebetween. In this case, the first conductor 210 and the second conductor 220 can be directly prepared as the lead frames LF11 and LF21, and there is no need to fill the vias drilled in the substrate with a conductive material by electroplating. Therefore, the mass productivity of the light-emitting device can be improved and the light-emitting device can be provided at low cost.

  Next, as shown in FIG. 19, the light emitting diodes LED1 to LED4 are mounted on the frame shown in FIG. 18 so as to straddle the gap G21. The P-side electrode 5 of the light emitting diodes LED1 to LED4 is connected to the first conductor 210 formed on the P-side frame FR1, and the N-side electrode 7 of the N-side frame FR2 is joined to the second conductor 220. The light emitting diodes LED1 to LED4, the P-side frame FR1, and the N-side frame FR2 are preferably molded by an insulating resin material as shown in FIG.

  The outer peripheral surfaces of the lead frames LF11 and LF21 are flatter, that is, have less irregularities than the outer peripheral surface of the through electrode formed by filling a via formed in the substrate body with a metal material. Although not clearly shown in the illustrated range, the lead frames F11 and LF21 are considerably thicker than the light-emitting diodes LED1 to LED4 and have excellent heat dissipation characteristics for the light-emitting diodes LED1 to LED4.

  Therefore, according to such a manufacturing method, the first conductor 210 and the second conductor 220 are provided on the outer peripheral surface rather than the through electrode formed by filling the via material formed in the substrate body with the metal material. Unevenness is reduced, and the conductivity in the thickness direction is substantially uniform. In addition, since the first conductor 210 and the second conductor 220 have less unevenness on the outer peripheral surface, voids are less likely to occur between the support 230 and the reduction of the cross-sectional area is suppressed. The electrical resistance is low, and the mechanical strength of the entire substrate can be increased.

  Furthermore, although not explicitly shown in the illustrated range, the first conductor 210 and the second conductor 220 are considerably thicker than the thickness of the light emitting diodes LED1 to LED4. As a result, a light emitting device having excellent heat dissipation characteristics can be provided.

  18 to 19, the number of light-emitting diodes mounted on the P-side lead frame LF11 and the N-side lead frame LF21 can be arbitrarily set as long as it is 1 or more, and is not limited to the illustrated number. Absent.

  20 to 22 are views showing a method of manufacturing the light emitting device shown in FIG. First, as shown in FIG. 20, a P-side frame FR11, an N-side frame FR21, a P-side frame FR12, and an N-side frame FR22 are sequentially arranged with a gap G21. In the side-by-side, the P-side frame FR11 and the N-side frame FR22 on both sides are substantially the same as those shown in FIG. 18, but the N-side frame FR21 and the P-side frame FR12 in the middle part have characteristic plane patterns Have That is, the N-side frame FR21 has a structure in which the second conductors 220 facing the first conductors 210 of the P-side frame FR11 and the P-side frame FR12 with a gap G21 are arranged on both sides in the width direction. On the other hand, the P-side frame FR12 has a structure in which the first conductor 210 facing the second conductor 220 of the N-side frame FR21 and the N-side frame FR22 with a gap G21 is disposed on both sides in the width direction.

  More specifically, the P-side lead frame LF11 in which the P-side frame FR11 and the first conductor 210 are integrated, the N-side lead frame LF21 in which the N-side frame FR21 and the second conductor 220 are integrated, the P-side frame FR12, and the first The P-side lead frame LF12 in which the one conductor 210 is integrated, and the N-side lead frame LF22 in which the N-side frame FR22 and the second conductor 220 are integrated are sequentially arranged with a gap G21 therebetween. In this case, the first conductor 210 and the second conductor 220 can be directly prepared as lead frames LF11, LF12, LF21, and LF22, and a conductive material is filled by electroplating a via drilled in the substrate. Therefore, the mass productivity of the light-emitting device can be improved and the light-emitting device can be provided at low cost.

  As shown in FIG. 21, light emitting diodes D11 to LED34 are mounted in a matrix on the frame shown in FIG. More specifically, the light-emitting diodes LED11 to LED14 are mounted so as to straddle the gap G21 between the P-side frame FR11 and the N-side frame FR21, and the gap G21 is straddled between the P-side frame FR12 and the N-side frame FR21. Thus, the light emitting diodes LED21 to LED24 are mounted, and the light emitting diodes LED31 to LED34 are mounted between the P side frame FR12 and the N side frame FR22 so as to straddle the gap G21. The P-side electrode 5 of the light emitting diodes LED11 to LED34 is connected to the first conductor 210 provided on the P-side frames FR11 and FR12, and the N-side electrode 7 is connected to the second conductor 220 provided on the N-side frames FR21 and FR22. Connected.

  Thereafter, as shown in FIG. 22, the insulating resin mold is formed so that the P side frame FR11, the N side frame FR21, the P side frame FR12, the N side frame FR22, and the light emitting diodes D11 to LED34 have a predetermined pattern. The support 230 is formed by molding. Thereby, the light-emitting device shown in FIG. 11 is obtained.

  The outer peripheral surfaces of the lead frames LF11, LF12, LF21, and LF22 are flatter, that is, have less irregularities than the outer peripheral surface of the through electrode formed by filling a via formed in the substrate body with a metal material. Although not clearly shown in the illustrated range, the lead frames LF11, LF12, LF21, and LF22 are considerably thicker than the light-emitting diodes LED11 to 34, and have heat dissipation characteristics with respect to the light-emitting diodes LEDs 11 to 34. Excellent.

  Therefore, according to such a manufacturing method, the first conductor 210 and the second conductor 220 are provided on the outer peripheral surface rather than the through electrode formed by filling the via material formed in the substrate body with the metal material. Unevenness is reduced, and the conductivity in the thickness direction is substantially uniform. In addition, since the first conductor 210 and the second conductor 220 have less unevenness on the outer peripheral surface, voids are less likely to occur between the support 230 and the reduction of the cross-sectional area is suppressed. The electrical resistance is low, and the mechanical strength of the entire substrate can be increased.

  Further, although not explicitly shown in the illustrated range, the first conductor 210 and the second conductor 220 are considerably thicker than the thickness of the light emitting diodes LED11 to 34. As a result, it is possible to provide a light emitting device having excellent heat dissipation characteristics.

  20 to 22, the number of P-side lead frames, the number of N-side lead frames, and the number of light-emitting diodes mounted on each lead frame can be arbitrarily set to 1 or more, respectively. It is not limited.

  The manufacturing method shown in FIGS. 12 to 22 is not necessarily fixed to the above-described relationship with the light emitting device shown in FIGS. 1 to 11, and can be used in appropriate combination. In addition, by providing a plurality of supports, a light emitting device in which light emitting diodes are arranged in a matrix can be obtained.

  Although the contents of the present invention have been specifically described above with reference to the preferred embodiments, it is obvious that those skilled in the art can take various modifications based on the basic technical idea and teachings of the present invention. It is.

  Next, still another method for manufacturing the light emitting device will be described with reference to FIGS.

  As a method for manufacturing a light emitting device, a conductor of a substrate can be formed by filling a space of the support with a metal or alloy melt, a metal or alloy powder, or a conductive paste. An example is shown in FIGS. First, as shown in FIG. 23, the support 23 made of an insulating material provided with the first space 201 and the second space 202 is installed on the support base 6, and as shown in FIG. 201 and the second space 202 are filled with a melt of metal or alloy, powder of metal or alloy, or conductive pastes 210 and 220. After filling, it is cured while applying pressure F1. Thereby, the 1st conductor 210 and the 2nd conductor 220 of a dense structure without a cavity can be formed. Thereafter, the light emitting diode is mounted, and the P-side electrode and the N-side electrode are joined to the first conductor 210 and the second conductor 220. What is necessary is just to cut | disconnect with the cutting line C1-C1 in order to individualize a light emitting diode.

  23 and 24, instead of filling the interior of the first space 201 and the second space 202 with a metal or alloy melt, metal or alloy powder, or conductive paste, the first space 201 and A metal member may be fitted into the second space 202. In this case, the manufacturing method using the frame shown in FIGS. 12 to 22 can be applied. However, it is necessary to slightly change the frame design.

  25 to 27 are diagrams showing another method for manufacturing the light emitting device. This embodiment shows a case where the support is made of a conductive material such as a semiconductor or a metal (including alloy) material. First, as shown in FIG. 25, a conductive support 23 provided with a first space 201 and a second space 202 is prepared. 26, after insulating layers 241 and 242 are formed on the inner wall surfaces of the first space 201 and the second space 202, the first space 201 and the second space 202 are formed as shown in FIG. 1st conductor 210 and the 2nd conductor 220 are formed in the inside. The first conductor 210 and the second conductor 220 are filled with a metal or alloy melt, a metal or alloy powder, or a conductive paste. After filling, it may be formed by being cured while being pressed, or may be formed by fitting a metal member. The insulating layers 241 and 242 can be formed of an inorganic insulator, an organic insulator, or a composite insulator thereof.

  Thereafter, the light emitting diode is mounted, and the P-side electrode and the N-side electrode are joined to the first conductor 210 and the second conductor 220. What is necessary is just to cut | disconnect with the cutting line C1-C1 in order to individualize a light emitting diode.

5 P-side electrode 7 N-side electrode 2 Substrate 21 First conductor 22 Second conductor 23 Support

Claims (12)

A light emitting device including a substrate and a light emitting diode,
The substrate includes a plurality of conductors,
Each of the conductors is a metal plate material or alloy plate material derived from a lead frame, and is electrically insulated in a state of being spaced apart from each other,
The light emitting diode is mounted on the substrate, and the electrode surfaces of the P-side electrode and the N-side electrode are joined to one end surfaces of the conductors,
Light emitting device. The light-emitting device according to claim 1,
The substrate includes a support;
The support is provided at the interval, and the conductor is integrated.
Light emitting device. The light-emitting device according to claim 1 or 2,
The conductor has a thickness of 400 μm to 1 mm.
Light emitting device. The light-emitting device according to any one of claims 1 to 3,
The light emitting device, wherein the conductor covers 80% or more of a planar area of each of an electrode surface of the P-side electrode and an electrode surface of the N-side electrode. The light-emitting device according to any one of claims 1 to 4,
The conductor comprises a first conductor and a second conductor,
Each of the first conductors is connected to the P-side electrode of one of the light emitting diodes,
Each of the second conductors is connected to one N-side electrode of the one light emitting diode.
Light emitting device. The light-emitting device according to any one of claims 1 to 4,
The conductor is provided with a P-side lead frame and an N-side lead frame.
The P-side lead frame is connected to one or more P-side electrodes of the light-emitting diodes,
The N-side lead frame is connected to one or more N-side electrodes of the light-emitting diodes.
Light emitting device. The light-emitting device according to any one of claims 1 to 6,
The light emitting diode has a portion where a P-type semiconductor layer and an N-type semiconductor layer overlap each other and a portion where they do not overlap each other,
The non-overlapping portion is disposed on the side of the overlapping portion, the width taken in the arrangement direction is sufficiently narrower than the width of the overlapping portion, and extends in the length direction,
The one electrode is one surface of the P-type semiconductor layer and the N-type semiconductor layer and covers the overlapping portion,
The other electrode is provided on the other semiconductor layer and covers the non-overlapping portion;
Light emitting device. The light-emitting device according to claim 7,
The other electrode covers most of the non-overlapping portion and is electrically insulated from the one semiconductor layer and the one electrode by an insulating gap;
The one electrode covers the entire surface of the one semiconductor layer except for the portion of the insulating gap,
Light emitting device.   The light-emitting device according to claim 1, wherein the light-emitting device is used for a lighting device, a backlight for a liquid crystal display, a display device, or a signal lamp. A method for manufacturing the light-emitting device according to claim 1, wherein the following steps (a) and (b):
(A) preparing a plate-like conductor;
(B) mounting the light emitting diode on the conductor, and bonding an electrode of the light emitting diode to the conductor;
Including a method. The method according to claim 10, wherein the following step (c):
(C) The conductor is a lead frame having a through hole, and the light emitting diode is mounted on the conductor so as to straddle the through hole.
Including a method. The method according to claim 10, wherein the following steps (d) and (e):
(D) The conductor is a lead frame, a plurality of the conductors are prepared, and each of the conductors is provided with a gap therebetween,
(E) mounting a light emitting diode on the conductor so as to straddle the gap;
Including a method.

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