JP5837060B2 - 射出成形工程およびそれを使用して製造される製品 - Google Patents
射出成形工程およびそれを使用して製造される製品 Download PDFInfo
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- JP5837060B2 JP5837060B2 JP2013519852A JP2013519852A JP5837060B2 JP 5837060 B2 JP5837060 B2 JP 5837060B2 JP 2013519852 A JP2013519852 A JP 2013519852A JP 2013519852 A JP2013519852 A JP 2013519852A JP 5837060 B2 JP5837060 B2 JP 5837060B2
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- plunger
- layer
- syringe
- molding
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
- B29K2023/10—Polymers of propylene
- B29K2023/12—PP, i.e. polypropylene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2055/00—Use of specific polymers obtained by polymerisation reactions only involving carbon-to-carbon unsaturated bonds, not provided for in a single one of main groups B29K2023/00 - B29K2049/00, e.g. having a vinyl group, as moulding material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0012—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular thermal properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/753—Medical equipment; Accessories therefor
- B29L2031/7544—Injection needles, syringes
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Description
注射器または閉鎖された容器または他の層の内容物がプランジャの中に浸出すること、またはその逆を防止するための浸出防止バリア、
注射器内の材料からの揮発性成分の損失を防止する、内容物漏出防止バリア、
注射器または閉鎖された容器の内容物に対する凝結やその他の不利な影響を防止する疎水性層。
反応して層を形成する前駆体ガス、
任意選択的に、酸素またはその他の酸化剤、
アルゴンまたはヘリウム等のキャリアガス、
層形成を誘導するのに十分なプラズマ生成電力。
ヘキサメチルジシロキサン(HMDSO)、
オクタメチルトリシロキサン、
デカメチルテトラシロキサン、
ドデカメチルペンタシロキサン、
または上記のうちの2つ以上の組み合わせ。上記の構造の中で酸素原子が−NH−に置換される類縁シラザンも、同様の層を形成するために有益である。想定される線形シラザンのいくつかの例は、オクタメチルトリシラザン、デカメチルテトラシラザンまたはこれらのうちの2つ以上である。
1,3,5−トリメチル−1,3,5−トリス(3,3,3−トリフルオロプロピル)メチル]シクロトリシロキサン、
2,4,6,8−テトラメチル−2,4,6,8−テトラビニルシクロテトラシロキサン、
ペンタメチルシクロペンタシロキサン、
ペンタビニルペンタメチルシクロペンタシロキサン、
ヘキサメチルシクロトリシロキサン、
ヘキサフェニルシクロトリシロキサン、
オクタメチルシクロテトラシロキサン(OMCTS)、
オクタフェニルシクロテトラシロキサン、
デカメチルシクロペンタシロキサン、
ドデカメチルシクロヘキサシロキサン、
メチル(3,3,3−トリフルオロプロピル)シクロシロキサン、
たとえば以下のような環状有機シラザンも想定される。
オクタメチルシクロテトラシラザン、
1,3,5,7−テトラビニル−1,3,5,7−テトラメチルシクロテトラシラザン ヘキサメチルシクロトリシラザン、
オクタメチルシクロテトラシラザン、
デカメチルシクロペンタシラザン、
ドデカメチルシクロヘキサシラザン、または
上記のうちの2つ以上の組み合わせ。
SiwOxCyまたはSiwNxCyのSi対O/N対Cの原子比率で、wが1、式中のxが約0.5〜2.4、yが約0.6〜約3の層、
潤滑層、容器の熱可塑性の基材、またはその両方の内腔への浸出を減少させるのに有効な量の、潤滑層を覆う表面処理層。
標準体積1〜6の前駆体、
標準体積5〜100のキャリアガス、
標準体積0.1〜2の酸化剤。
(a)本明細書で定義する前駆体、任意選択的に有機珪素前駆体、任意選択的にO2を含む気体反応物質を基板表面の付近に供給するステップと、
(b)気体反応物質からプラズマを生成させ、それゆえ、プラズマ強化化学蒸着法(PECVD)によって基板表面上に層を形成するステップ。
(i)0.1〜25W、任意選択的に1〜22W、任意選択的に3〜17W、さらに任意選択的に5〜14W、任意選択的に7〜11W、たとえば8Wの電力が供給される電極を用いて生成され、および/または(ii)電極電力対プラズマ体積の比率は10W/ml未満、任意選択的に5W/ml〜0.1W/ml、任意選択的に4W/ml〜0.1W/ml、任意選択的に2W/ml〜0.2W/mlとなる。バリア層すなわちSiOx層の場合、プラズマは任意選択的に、(i)8〜500W、任意選択的に20〜400W、任意選択的に35〜350W、さらに任意選択的に44〜300W、任意選択的に44〜70Wの電力が供給される電極を用いて生成され、および/または
(ii)電極電力対プラズマ体積の比率は5W/ml以上、任意選択的に6W/ml〜150W/ml、任意選択的に7W/ml〜100W/ml、任意選択的に7W/ml〜20W/mlとなる。
これには以下が含まれる、すなわち、
xが1.5〜2.9、厚さ5〜200nm、内腔に面する内面と、外面を有するSiOxの内層と、
厚さ100nm〜3mm、内面と外面を有し、内面がSiOxの内層に面するスペーサ層と、
xが1.5〜2.9、厚さ5〜200nm、スペーサ層に面する内面と、外面を有するSiOxの外層。
本明細書に記載されている新規なプラズマ成膜法は、プラズマ強化化学蒸着法(PECVD)に基づく。この工程は珪素を含む蒸気を利用するものであり、これを採血管または注射器の中で減圧して(mTorrの範囲、大気圧は760Torr)酸素と結合させることができる。次に13.56MHz[無線周波数範囲]で生成された電界を外部電極と内部の接地されたガス取入口との間に印加して、プラズマを発生させる。採血管と注射器にコーティングするために使用する圧力と電力で、プラズマ工程は電子衝撃イオン化により駆動され、これは工程中の電子が化学反応を起こす駆動力であることを意味する。具体的には、プラズマが珪素を含む材料[ヘキサメチルジシロキサン(HMDSOと、オクタメチルシクロテトラシラロキサン(OMCTS)等の他の反応物質]の電子衝撃イオン化を通じて化学反応を駆動し、その結果、二酸化珪素、すなわちSiOxCy層が採血管または注射器の内面に成膜される。これらの層の厚さはおよそ20ナノメートル以上である。HMDSOは、珪素原子に6つのメチル基が付いたSi−O−Siバックボーンからなる。工程によってSi−C結合が分離され、(採血管または注射器の表面において)酸素と反応して二酸化珪素が生成される。層は原子ベースで成長するため、厚さ20〜30ナノメートルの高密度の共形層に有意なバリア特性を持たせることができる。酸化珪素は気体、水分および微細な有機分子に対する物理的バリアとして機能し、民生用ガラスより純度が高い。OMCTSにより、潤滑性または付着防止特性を有する層が得られる。
1.この工程は、真空チャンバとして剛性の容器、たとえば容器ホルダ1050を利用する。PECVDは従来、第二の真空容器を使用し、その中に部品を入れてコーティングする。容器を真空チャンバとして利用することによって、加工装置は有意に簡素化され、サイクル/処理時間が短縮し、それゆえ製造コストと資金が削減される。この方法はまた、設備拡張の問題も軽減させるが、それは設備拡張がスループットの要求を満たすのに必要な採血管または注射器の数を複製していくのと同様に単純に行えるからである。
Claims (11)
- 円筒形本体(114)を有する固体成形品(146)を成形する方法において、
・キャビティ(138)を画定する実質的に剛性の表面(133)と実質的に剛性のコア(136)を含む多用途射出成形装置を提供するステップであって、前記キャビティ(138)とコア(136)がそれらの間に成形空間(144)を画定し、前記キャビティ(138)と前記コア(136)の少なくとも一方が、分割軸(X)に沿って他方に関して移動可能であり、それによって成形後の成形品を取り外すために前記成形空間(144)が開き、前記コア(136)の少なくとも一部が、抜き勾配(θ)が前記分割軸(X)に関して0.5度以下である小さい抜き勾配の要素(136等)であるようなステップと、
・前記小さい抜き勾配の要素(136等)の少なくとも一部を第一の選択温度まで加熱して、それを熱膨張させるステップと、
・加熱前、加熱中または加熱後に、流体成形材料(146)を前記成形空間(144)へと射出するステップと、
・前記流体成形材料(146)の少なくとも表面を前記小さい抜き勾配の要素(136等)に合わせて形成し、小さい抜き勾配の形成面(150)を画定するステップと、
・少なくとも前記小さい抜き勾配の形成面(150)を固化して、小さい抜き勾配の固体形成面(150)を提供するステップと、
・前記小さい抜き勾配の要素(136等)の少なくとも一部を、前記第一の選択温度より低い第二の選択平均温度まで冷却して、前記小さい抜き勾配の要素(136等)の少なくとも一部を、前記小さい抜き勾配の要素(136等)と前記小さい抜き勾配の形成面(150)の間に空隙を形成して前記小さい抜き勾配の固体形成面(150)から離れるように十分に熱収縮させ、前記小さい抜き勾配の要素(136等)を前記小さい抜き勾配の形成面(150)から分離させるステップと、
・前記キャビティ(138)とコア(136)を前記分割軸(X)に沿って分割するステップと、
・前記固体成形品(146)を前記成形空間(144)から取り外すステップと、
を含む方法。 - 前記流体成形材料(146)の前記成形空間(144)内に射出される時の温度はそのガラス転移点より高い、請求項1に記載の方法。
- 前記固化するステップは、射出された前記成形材料(146)の少なくとも前記形成面(150)をそのガラス転移点以下まで冷却することによって行われる、請求項1又は2に記載の方法。
- 前記小さい抜き勾配の要素(136等)の抜き勾配が0°〜0.5°である、請求項1〜3のいずれか1項に記載の方法。
- 前記小さい抜き勾配の要素(136等)の抜き勾配が0°〜0.25°である、請求項1〜4のいずれか1項に記載の方法。
- 前記小さい抜き勾配の要素(136等)の抜き勾配が0°〜0.16°である、請求項1〜5のいずれか1項に記載の方法。
- 前記小さい抜き勾配の要素(136等)の抜き勾配が0°〜0.03°である、請求項1〜6のいずれか1項に記載の方法。
- 前記小さい抜き勾配の要素(136等)の抜き勾配が0°〜0.014°、又は0°〜0.01°である、請求項1〜7のいずれか1項に記載の方法。
- 前記成形材料(146)がポリエチレンテレフタレート、環状オレフィンコポリマ、環状オレフィンポリマ、ポリプロピレンまたはそれらの組み合わせを含む、請求項1〜8のいずれか1項に記載の方法。
- 前記小さい抜き勾配の要素が鋼、たとえばH13工具鋼を含む、請求項1〜9のいずれか1項に記載の方法。
- 前記成形空間は、抜き勾配が0°〜0.15°、又は0°〜0.1°、又は0°〜0.06°、又は0°〜0.03°の注射器プランジャを形成するように構成される、請求項1〜10のいずれか1項に記載の方法。
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EP2910358B1 (en) | 2018-12-05 |
WO2012009653A1 (en) | 2012-01-19 |
US10059047B2 (en) | 2018-08-28 |
CN103118852A (zh) | 2013-05-22 |
EP2910358A2 (en) | 2015-08-26 |
CN103118852B (zh) | 2016-12-21 |
US9475225B2 (en) | 2016-10-25 |
EP2910358A3 (en) | 2015-12-02 |
CA2805668A1 (en) | 2012-01-19 |
JP2013535357A (ja) | 2013-09-12 |
EP2593286B1 (en) | 2015-03-04 |
EP2593286A1 (en) | 2013-05-22 |
US20140323981A1 (en) | 2014-10-30 |
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