JP5827235B2 - 残留物を清浄する方法および装置 - Google Patents

残留物を清浄する方法および装置 Download PDF

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Publication number
JP5827235B2
JP5827235B2 JP2012538809A JP2012538809A JP5827235B2 JP 5827235 B2 JP5827235 B2 JP 5827235B2 JP 2012538809 A JP2012538809 A JP 2012538809A JP 2012538809 A JP2012538809 A JP 2012538809A JP 5827235 B2 JP5827235 B2 JP 5827235B2
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Japan
Prior art keywords
plasma
residue
ion
gas
cleaning
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Expired - Fee Related
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JP2012538809A
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English (en)
Japanese (ja)
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JP2013511128A (ja
JP2013511128A5 (https=
Inventor
シュリヴァスタヴァ，アシーム
ディヴェルジリオ，ウィリアム
ギルクリスト，グレン
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication date
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
JP2012538809A 2009-11-11 2010-11-12 残留物を清浄する方法および装置 Expired - Fee Related JP5827235B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/616,662 US20110108058A1 (en) 2009-11-11 2009-11-11 Method and apparatus for cleaning residue from an ion source component
US12/616,662 2009-11-11
PCT/US2010/002969 WO2011059504A2 (en) 2009-11-11 2010-11-12 Method and apparatus for cleaning residue from an ion source component

Publications (3)

Publication Number Publication Date
JP2013511128A JP2013511128A (ja) 2013-03-28
JP2013511128A5 JP2013511128A5 (https=) 2015-07-02
JP5827235B2 true JP5827235B2 (ja) 2015-12-02

Family

ID=43735816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538809A Expired - Fee Related JP5827235B2 (ja) 2009-11-11 2010-11-12 残留物を清浄する方法および装置

Country Status (7)

Country Link
US (2) US20110108058A1 (https=)
EP (1) EP2499653A2 (https=)
JP (1) JP5827235B2 (https=)
KR (1) KR101741405B1 (https=)
CN (1) CN102612731B (https=)
TW (1) TWI500064B (https=)
WO (1) WO2011059504A2 (https=)

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US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
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US10062548B2 (en) * 2015-08-31 2018-08-28 Varian Semiconductor Equipment Associates, Inc. Gas injection system for ion beam device
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN113663988B (zh) * 2018-10-18 2023-09-05 汉辰科技股份有限公司 清理离子布植机内部氟化表面的方法及装置
CN109447013B (zh) * 2018-11-06 2022-02-15 重庆工程职业技术学院 计算机用户身份识别设备
JP7385809B2 (ja) * 2019-09-05 2023-11-24 日新イオン機器株式会社 イオンビーム照射装置のクリーニング方法
US20250046586A1 (en) * 2023-07-31 2025-02-06 Veeco Instruments Inc. Plasma vessel cleaning for ion beam system

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Also Published As

Publication number Publication date
US20110108058A1 (en) 2011-05-12
KR101741405B1 (ko) 2017-05-30
WO2011059504A2 (en) 2011-05-19
CN102612731B (zh) 2016-03-16
TWI500064B (zh) 2015-09-11
JP2013511128A (ja) 2013-03-28
EP2499653A2 (en) 2012-09-19
WO2011059504A3 (en) 2011-10-27
CN102612731A (zh) 2012-07-25
TW201137920A (en) 2011-11-01
KR20120098774A (ko) 2012-09-05
US20130305989A1 (en) 2013-11-21

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