JP5812974B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5812974B2 JP5812974B2 JP2012266140A JP2012266140A JP5812974B2 JP 5812974 B2 JP5812974 B2 JP 5812974B2 JP 2012266140 A JP2012266140 A JP 2012266140A JP 2012266140 A JP2012266140 A JP 2012266140A JP 5812974 B2 JP5812974 B2 JP 5812974B2
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Description
(実施の形態1)
図1および図2を参照して、パワーデバイスモジュール101(炭化珪素半導体装置)は、容器10と、実装基板40と、蓋50と、金属柱60(接続部材)と、螺子キャップ70(締具)と、はんだ部91、92と、主端子81〜83(主端子80と総称する)と、制御端子89とを有する。
Vg=Vg1=VG−VL=VG−LS×di/dt
であり、負帰還無しの場合、
Vg=Vg2
である。ここで、iは出力電流であり、VGは外部入力電圧であり、Vgはトランジスタの入力電圧(駆動電圧)であり、LSは寄生インダクタンスであり、VLは寄生インダクタンスLSにより発生するドロップ電圧でありVL=LS×di/dtである。よって負帰還有の場合、VLが負帰還となり、iおよびLSが大きいほど負帰還が強くなる(Vg1<Vg2)。
i=hfe×ig
となる。入力電流igのうちコレクタへ流れる電流をigcとしエミッタへ流れる電流をigeとすると、キルヒホッフの法則より、
i=hfe((VG−Vg1−VL)/R−igc)
が満たされる。よって、VLが大きくなればiは小さくなる。またdi/dtはiの時間変化率なので、iが小さくなるとdi/dtも小さくなる。ターンオフのときは、図8における電流および電圧の向き(符号)は図中矢印とは逆になる。またサージ電圧は、回路のインピーダンスLとターンオフ時の−di/dtとの積、すなわちL×(−di/dt)に対応する。よって負帰還が強められることによりdi/dtが小さくなれば、サージ電圧も小さくなる。
図9に示すように、パワーデバイスモジュール103(炭化珪素半導体装置)においては、パワーデバイスモジュール101は、半導体チップ30に直接接合されたリード部材90をさらに有する。リード部材90は、導体からなり、好ましくは金属からなり、たとえば銅からなる。リード部材90と半導体チップ30との接合は、たとえば、超音波接合により行うことができる。金属柱60のピン部61はリード部材90を介して半導体チップ30に接合されている。ピン部61とリード部材90との接合は、たとえばはんだ付けにより行うことができる。なお、他の構成については、上述した実施の形態1の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
Claims (5)
- 開口部を有する容器と、
前記容器内に配置された実装基板とを備え、前記実装基板は、半導体チップと、前記半導体チップが実装された回路基板とを有し、さらに
前記容器に面する裏面と、前記裏面と反対の表面とを有し、前記容器の前記開口部を塞ぐ蓋を備え、前記蓋には貫通孔が設けられており、前記蓋は回路パターンを有し、前記回路パターンの少なくとも一部は前記裏面上に位置し、さらに
前記実装基板上に接合された接合部と、前記蓋の前記裏面上において前記回路パターンに押し付けられた端子部と、前記蓋の前記貫通孔に挿入された螺子部とを有する接続部材と、
前記蓋の前記表面上に配置された締具とを備え、前記締具は、前記接続部材の前記螺子部が捩じ込まれた螺子孔を有する、半導体装置。 - 前記接続部材の前記接合部は、前記実装基板の前記回路基板に接合されている、請求項1に記載の半導体装置。
- 前記接続部材の前記接合部は、前記実装基板の前記半導体チップに接合されている、請求項1に記載の半導体装置。
- 前記半導体チップに直接接合されたリード部材をさらに備え、
前記接続部材の前記接合部は、前記リード部材を介して前記半導体チップに接合されている、請求項3に記載の半導体装置。 - 前記半導体チップは、前記接続部材の前記接合部を介して入力された外部信号に応じて主電流のスイッチングを行うものである、請求項1〜4のいずれか1項に記載の半導体装置。
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JP2012266140A JP5812974B2 (ja) | 2012-12-05 | 2012-12-05 | 半導体装置 |
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JP5812974B2 true JP5812974B2 (ja) | 2015-11-17 |
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JP6287620B2 (ja) * | 2014-06-23 | 2018-03-07 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6257478B2 (ja) * | 2014-09-02 | 2018-01-10 | 三菱電機株式会社 | 電力用半導体装置 |
US10483175B2 (en) * | 2015-12-04 | 2019-11-19 | Mitsubishi Electric Corporation | Power semiconductor device |
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JP3519211B2 (ja) * | 1996-04-18 | 2004-04-12 | 日本インター株式会社 | 複合半導体装置 |
JP4569473B2 (ja) * | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
JP4840314B2 (ja) * | 2007-09-26 | 2011-12-21 | 三菱電機株式会社 | 電力半導体モジュール |
JP5526659B2 (ja) * | 2008-09-25 | 2014-06-18 | ソニー株式会社 | ミリ波誘電体内伝送装置 |
JP4607995B2 (ja) * | 2008-11-28 | 2011-01-05 | 三菱電機株式会社 | 電力用半導体装置 |
JP2010212620A (ja) * | 2009-03-12 | 2010-09-24 | Toshiba Corp | パワーモジュール |
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