JP5802629B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device used for converting DC power into AC power or converting AC power into DC power. In particular, the present invention relates to a power conversion device used for a hybrid vehicle or an electric vehicle.

  A power conversion device used for a hybrid vehicle or an electric vehicle needs to increase output power as the required output torque of a drive motor used for the hybrid vehicle or electric vehicle increases. Thereby, the electric current which flows between the components of a power converter device increases. The components of the power converter are, for example, a power semiconductor module that converts a direct current into an alternating current, a capacitor module that smoothes a direct current voltage, an alternating current connector that transmits an alternating current, and the like. The components of these power converters are connected by a conductive member such as a bus bar, and current is transmitted.

  The increase in the output power of the power conversion device increases the heat generation of the conductive member, which may be transmitted to the components of the power conversion device.

  Patent Document 1 describes that a direct current bus bar that transmits direct current flowing from a capacitor module to a power semiconductor module is disposed between the capacitor element and the flow path, thereby improving the cooling performance of the direct current bus bar. .

  However, further increase in the heat dissipation performance of the conductive member is required with respect to the increase in the output power of the power converter.

JP 2010-182898 A

  The subject of this invention is improving the thermal radiation performance of the electrically-conductive member which connects the component of a power converter device. Moreover, another subject of this invention is improving the thermal radiation performance of the power converter device containing an electroconductive member.

  In order to solve the above problems, a power conversion device according to the present invention includes a power semiconductor module having a power semiconductor element that converts a direct current into an alternating current, a flow path forming body that forms a flow path through which a cooling refrigerant flows, A bus bar module that seals the alternating current bus bar that transmits the alternating current with an insulating resin material, and the flow path forming body forms first and second openings connected to the flow path, and The power semiconductor module is disposed in the flow path forming body so as to close the first opening, and the bus bar module is disposed in the flow path forming body so as to close the second opening.

  ADVANTAGE OF THE INVENTION According to this invention, the thermal radiation performance of the electrically-conductive member which connects the component of a power converter device can be improved.

It is a figure which shows the control block of a hybrid vehicle. It is the figure which showed typically the arrangement | positioning location of the power converter device 200 in a vehicle. 3 is a circuit diagram showing a configuration of an inverter circuit 140. FIG. It is an external appearance perspective view of a power converter device. 2 is an external perspective view of a power semiconductor module 300. FIG. It is sectional drawing of the power semiconductor module 300 when it cuts in the cross section A of FIG. 3 is a circuit diagram showing an internal circuit configuration of a power semiconductor module 300. FIG. It is an external perspective view of the DC bus bar mold 50, and is a view seen from the bottom surface side of the power converter 200. It is an external perspective view of the DC bus bar mold 50, and is a view seen from the upper cover 3 side of the power conversion device 200. It is the perspective view which decomposed | disassembled DC bus-bar mold 50 for every component. It is an exploded view for demonstrating arrangement | positioning of a capacitor | condenser element, a capacitor | condenser wall, and a ground wire. FIG. 3 is an external perspective view of the capacitor module 4 and is a view seen from the bottom side of the power conversion device 200. 2 is an external view of a bus bar module 90. FIG. 6 is an internal structure diagram for explaining a layout of an AC bus bar group 802 in the bus bar module 90. FIG. It is a perspective view of AC bus bar group 802. FIG. 3 is a perspective view showing a configuration of a flow path module 130. FIG. FIG. 6 is a perspective view showing an assembly procedure of the flow path module 130 and the capacitor module 4. FIG. 5 is a perspective view showing an assembly procedure of the flow path module 130 and the bus bar module 90. FIG. 6 is a perspective view showing an assembly procedure of the base plate 30 and the circuit board 20. A state in which the base plate 30 and the circuit board 20 shown in FIG. 17 are attached to the bus bar module 90 is stored in the case 10. It is a disassembled perspective view of the side cover ASSY. It is a figure which shows the state which attached the DC high voltage connector 60 and the side cover assembly 70 from the state shown in FIG. It is sectional drawing cut | disconnected by the cross section D of FIG. 20, and seeing from the direction of the arrow. It is an enlarged view of the area | region C described in FIG.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram showing a control block of a hybrid vehicle (hereinafter referred to as “HEV”). In addition, the power converter device of this Embodiment is applicable not only to HEV but to the power converter device mounted in vehicles, such as PHEV or EV, and also to the power converter device used for vehicles, such as a construction machine. Can also be applied.

  Engine EGN and motor generators MG1, MG2 generate vehicle running torque. Motor generators MG1 and MG2 not only generate rotational torque, but also have a function of converting mechanical energy applied to motor generator MG1 or MG2 from the outside into electric power. The motor generator MG1 is, for example, a synchronous machine or an induction machine, and operates as a motor or a generator depending on the operation method as described above. When the motor generators MG1 and MG2 are mounted on an automobile, it is desirable to obtain a small size and high output, and a permanent magnet type synchronous motor using a magnet such as neodymium is suitable. Further, the permanent magnet type synchronous motor generates less heat from the rotor than the induction motor, and is excellent for automobiles from this viewpoint.

  The output torque of the engine EGN and the output torque of the motor generator MG2 are transmitted to the motor generator MG1 via the power distribution mechanism TSM, and the rotation torque from the power distribution mechanism TSM or the rotation torque generated by the motor generator MG1 is the transmission TM and the differential. It is transmitted to the wheel via the gear DEF. On the other hand, during regenerative braking operation, rotational torque is transmitted from the wheels to motor generator MG1, and AC power is generated based on the supplied rotational torque. The generated AC power is converted into DC power by a power conversion device 200 described later, and the high-voltage battery 136 is charged, and the charged power is used again as travel energy. Further, when the electric power stored in the battery 136 for high voltage decreases, the rotational energy generated by the engine EGN is converted into AC power by the motor generator MG2, and then the AC power is converted into DC by the power converter 200. The battery 136 can be charged by converting into electric power. Transmission of mechanical energy from engine EGN to motor generator MG2 is performed by power distribution mechanism TSM.

  Next, the power conversion device 200 will be described. The inverter circuit 140 and the inverter circuit 142 provided in the power conversion device 200 are electrically connected to each other through the battery 136 and the DC connector 138, and power can be exchanged between the battery 136 and the inverter circuit 140 or 142. Done. When motor generator MG1 is operated as a motor, inverter circuit 140 generates AC power based on DC power supplied from battery 136 via DC connector 138 and supplies it to motor generator MG1 via AC terminal 188. . The configuration comprising motor generator MG1 and inverter circuit 140 operates as a first motor generator unit. Similarly, when motor generator MG2 is operated as a motor, inverter circuit 142 generates AC power based on the DC power supplied from battery 136 via DC connector 138, and is supplied to motor generator MG2 via AC terminal 189. Supply. The configuration composed of motor generator MG2 and inverter circuit 142 operates as a second motor generator unit. The first motor generator unit and the second motor generator unit may be operated as both motors or generators depending on the operating state, or may be operated using both of them. It is also possible to stop without driving one.

  In the present embodiment, the first motor generator unit is operated as the electric unit by the electric power of the battery 136, so that the vehicle can be driven only by the power of the motor generator MG1. Furthermore, in this embodiment, the battery 136 can be charged by operating the first motor generator unit or the second motor generator unit as a power generation unit and generating power by operating the engine EGN or the power from the wheels.

  Although omitted in FIG. 1, the battery 136 is also used as a power source for driving an auxiliary motor. The auxiliary motor is, for example, a motor for driving a compressor of an air conditioner or a motor for driving a control hydraulic pump. DC power is supplied from the battery 136 to the auxiliary power module, and the auxiliary power module generates AC power and supplies it to the auxiliary motor. The auxiliary power module has basically the same circuit configuration and function as the inverter circuits 140 and 142, and controls the phase, frequency, and power of alternating current supplied to the auxiliary motor. The power conversion device 200 includes a capacitor 500 for smoothing DC power supplied to the inverter circuits 140 and 142.

  The power conversion device 200 includes a communication connector 21 for receiving a command from a host control device or transmitting data representing a state to the host control device. Power conversion device 200 calculates a control amount of motor generators MG1 and MG2 by control circuit 172 based on a command input from connector 21, and further operates motor generators MG1 and MG2 as a motor or a generator. Or calculate. The power conversion device 200 generates a control pulse based on the calculation result, and supplies the generated control pulse to the driver circuit 174. The driver circuit 174 generates a drive pulse for controlling the inverter circuits 140 and 142 based on the supplied control pulse.

  FIG. 2 schematically shows the location of the power conversion device 200 in the vehicle. The engine EGN and the transmission TM are arranged in this order from the front side of the vehicle, and the power conversion device 200 is arranged below the transmission TM. A motor generator MG1 is arranged in front of the case of transmission TM (above power converter 200). From the viewpoint of space saving, the smaller the arrangement space of the power conversion device 200, the better.

  The shorter the wiring for supplying power from power conversion device 200 to motor generator MG1, the better. Power conversion device 200 is preferably arranged in the vicinity of motor generator MG1. Therefore, the power conversion device 200 is often arranged in a narrow space such as the lower part of the transmission TM as shown in FIG. 2, and the power conversion device 200 is desired to be reduced in size and thickness. The arrangement shown in FIG. 2 is an example, and is provided on the in-case engine side of the transmission TM or built in the bell housing.

  Next, the configuration of the electric circuit of the inverter circuit 140 will be described with reference to FIG. In the following description, an insulated gate bipolar transistor is used as a semiconductor element, and hereinafter abbreviated as IGBT. The IGBT 328 and the diode 156 that operate as the upper arm, and the IGBT 330 and the diode 166 that operate as the lower arm constitute the series circuit 150 of the upper and lower arms. The inverter circuit 140 includes the series circuit 150 corresponding to three phases of the U phase, the V phase, and the W phase of the AC power to be output.

  In this embodiment, these three phases correspond to the three-phase windings of the armature winding of motor generator MG1. In series circuit 150 of the upper and lower arms of each of the three phases, intermediate electrode 169, which is the middle portion of the series circuit, is connected to motor generator MG1 via AC terminal 159, AC bus bar 802, and AC terminal 188. The alternating current output from series circuit 150 is output from intermediate electrode 169 to motor generator MG1 through the above path.

  The collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to the capacitor terminal 506 on the positive electrode side of the capacitor 500 via the DC positive electrode terminal 157. The emitter electrode of the IGBT 330 of the lower arm is electrically connected to the capacitor terminal 504 on the negative electrode side of the capacitor 500 via the DC negative electrode terminal 158.

  As described above, the control circuit 172 receives a control command from the host control device via the connector 21, and based on the control command, the IGBT 328 and the IGBT 330 constituting the upper arm or the lower arm of the serial circuit 150 of each phase of the inverter circuit 140. A control pulse that is a control signal for controlling the signal is generated and supplied to the driver circuit 174.

  Based on the control pulse, the driver circuit 174 supplies a drive pulse to the IGBT 328 and the IGBT 330 constituting the upper arm or the lower arm of each phase series circuit 150. The IGBT 328 and the IGBT 330 perform conduction or cutoff operation based on the drive pulse from the driver circuit 174, and convert the DC power supplied from the battery 136 into three-phase AC power. The converted electric power is supplied to motor generator MG1.

  The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 includes a collector electrode 163, a signal emitter electrode 165, and a gate electrode 164. The diode 156 is electrically connected between the collector electrode 153 and the emitter electrode 155. The diode 166 is electrically connected between the collector electrode 163 and the emitter electrode 165.

  As the switching power semiconductor element, a metal oxide semiconductor field effect transistor (hereinafter abbreviated as MOSFET) may be used. In this case, the diode 156 and the diode 166 are unnecessary. As a switching power semiconductor element, IGBT is suitable when the DC voltage is relatively high, and MOSFET is suitable when the DC voltage is relatively low.

  Regarding the capacitor 500, a positive electrode side capacitor terminal 506, a negative electrode side capacitor terminal 504, a positive electrode side power supply terminal 509, and a negative electrode side power supply terminal 508 are provided. The high-voltage DC power from the battery 136 is supplied to the positive-side power terminal 509 and the negative-side power terminal 508 via the DC connector 138, and the positive-side capacitor terminal 506 and the negative-side capacitor terminal 504 of the capacitor 500. To the inverter circuit 140.

  On the other hand, the DC power converted from AC power by the inverter circuit 140 is supplied to the capacitor 500 from the capacitor terminal 506 on the positive electrode side or the capacitor terminal 504 on the negative electrode side. Further, the DC power is supplied to the battery 136 from the positive power supply terminal 509 and the negative power supply terminal 508 via the DC connector 138 and accumulated in the battery 136.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the IGBT 328 and the IGBT 330. The input information to the microcomputer includes a target torque value required for the motor generator MG1, a current value supplied from the series circuit 150 to the motor generator MG1, and a magnetic pole position of the rotor of the motor generator MG1.

  The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal from a current sensor module 180 described later. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG1. In this embodiment, the case where the current sensor module 180 detects three-phase current values is taken as an example. However, even if the current values for two phases are detected and the current for three phases is obtained by calculation, good.

  The microcomputer in the control circuit 172 calculates the d-axis and q-axis current command values of the motor generator MG1 based on the target torque value, the calculated d-axis and q-axis current command values, and the detected d The voltage command values for the d-axis and q-axis are calculated based on the difference between the current values for the axes and q-axis, and the calculated voltage command values for the d-axis and q-axis are calculated based on the detected magnetic pole position. It is converted into voltage command values for phase, V phase, and W phase. Then, the microcomputer generates a pulse-like modulated wave based on a comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U phase, V phase, and W phase, and the generated modulation wave The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  When driving the lower arm, the driver circuit 174 outputs a drive signal obtained by amplifying the PWM signal to the gate electrode of the corresponding IGBT 330 of the lower arm. Further, when driving the upper arm, the driver circuit 174 amplifies the PWM signal after shifting the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, and uses this as a drive signal as a corresponding upper arm. Are output to the gate electrodes of the IGBTs 328 respectively.

  In addition, the microcomputer in the control circuit 172 detects abnormality (overcurrent, overvoltage, overtemperature, etc.) and protects the series circuit 150. For this reason, sensing information is input to the control circuit 172. For example, information on the current flowing through the emitter electrodes of the IGBTs 328 and IGBTs 330 is input to the corresponding drive units (ICs) from the signal emitter electrode 155 and the signal emitter electrode 165 of each arm. Thereby, each drive part (IC) detects an overcurrent, and when an overcurrent is detected, the switching operation of the corresponding IGBT 328 and IGBT 330 is stopped, and the corresponding IGBT 328 and IGBT 330 are protected from the overcurrent.

  Information on the temperature of the series circuit 150 is input to the microcomputer from a temperature sensor (not shown) provided in the series circuit 150. In addition, voltage information on the DC positive side of the series circuit 150 is input to the microcomputer. The microcomputer performs over-temperature detection and over-voltage detection based on the information, and stops switching operations of all the IGBTs 328 and IGBTs 330 when an over-temperature or over-voltage is detected.

  The configuration of the inverter circuit 142 is the same as that of the inverter circuit 140, and a description thereof will be omitted.

  FIG. 4 is an external perspective view of the power conversion device 200. The case 10 is a metal case having a substantially rectangular parallelepiped shape. An upper cover 3 is attached to the upper surface of the case 10. An opening 10 a is formed on one side surface of the case 10 in the short direction. Pipings 13 and 14 are disposed in the opening 10a. A cooling medium (for example, cooling water or the like is used, hereinafter referred to as a refrigerant) flows into the case 10 through the pipe 13 and out of the case 10 through the pipe 14.

  A DC high-voltage connector 60 is attached to one side surface where the opening 10a is formed. The DC high voltage connector 60 is integrally formed with DC input cables 61P and 61N. In the case 10, a connector 21 is disposed on a surface facing one side surface where the opening 10 a is formed. The connector 21 is a signal connector provided for connection to the outside, such as a host controller.

  A side cover assembly 70 is disposed on one side surface of the case 10 in the longitudinal direction. The side cover assembly 70 will be described later with reference to FIGS. 17 and 18. AC bus bars 802U-1, 802V-1, 802W-1, 802U-2, 802V-2, 802W-2 project from the opening formed in the side cover assembly 70. AC bus bars 802U-1, 802V-1, and 802W-1 are connected to motor generator MG1. AC bus bars 802U-2, 802V-2, 802W-2 are connected to motor generator MG2.

  An assembly procedure of the power conversion device 200 of FIG. 4 will be described with reference to FIGS. In the following, first, the power semiconductor module 300 will be described with reference to FIGS. Subsequently, the capacitor module 4 will be described with reference to FIGS. Subsequently, the bus bar module 90 will be described with reference to FIGS. 11 to 13. Subsequently, an assembly procedure of the flow path forming body 12 and each module component will be described with reference to FIGS. 14 to 20.

  FIG. 5 is an external perspective view of the power semiconductor module 300. The power semiconductor module 300 includes a power semiconductor element that converts a direct current into an alternating current in a module case 304. The module case 304 is a cooler having a can-type structure formed in a bottomed cylindrical shape having an insertion port on one surface and a bottom on the other surface. The module case 304 is formed with a flange 304B surrounding the outer periphery of the insertion slot. As shown in FIG. 5, the module case 304 is formed with a first heat radiating surface 307 </ b> A that is wider than the other surfaces. A second heat radiating surface 307B (see FIG. 6) is formed on the surface facing the first heat radiating surface 307A.

  Cooling fins 305A are formed on the first heat radiation surface 307A. In addition, on the first heat radiation surface 307A, a thin portion 304A is formed on the outer periphery of the region where the cooling fin 305A is formed. Similarly, cooling fins 305B are formed on the second heat radiating surface 307B.

  The DC positive terminal 157 and the DC negative terminal 158 are formed so as to be partially exposed from the wiring insulating portion 608. The DC positive terminal 157 is connected to a terminal 501P-I of the capacitor module 4 described later. The DC negative terminal 158 is connected to a terminal 501N-I of the capacitor module 4 described later.

  The output terminal 159 is formed so as to face the same direction as the direction in which the insertion slot of the module case 304 faces. The output terminal 159 is connected to a bus bar module 90 described later.

  The signal terminals 325U and 325L are formed so as to protrude from the wiring insulating portion 608 in the same direction as the direction in which the first heat radiating surface 305A faces. Further, the signal terminals 336U and 336L are also formed to protrude in the same direction as the signal terminal 325L. The signal terminals 336U and 336L protrude from the wiring insulating portion 608 together with the signal terminal 325L.

  The module case 304 is made of metal, and is made of, for example, an aluminum alloy material (Al, AlSi, AlSiC, Al—C, etc.).

  FIG. 6 is a cross-sectional view taken along a cross section A shown in FIG. FIG. 6 shows the cooling fins and signal terminals in a simplified manner.

  FIG. 7 is a circuit diagram showing an internal circuit configuration of the power semiconductor module 300. The collector electrode of the upper arm IGBT 328 and the cathode electrode of the upper arm side diode 156 are connected via a conductor plate 315. A DC positive terminal 157 is connected to the conductor plate 315. The emitter electrode of the IGBT 328 and the anode electrode of the upper arm side diode 156 are connected via a conductor plate 318. Three signal terminals 325U are connected in parallel to the gate electrode 154 of the IGBT 328. A signal terminal 336U is connected to the signal emitter electrode 155 of the IGBT 328.

  On the other hand, the collector electrode of the IGBT 330 on the lower arm side and the cathode electrode of the diode 166 on the lower arm side are connected via the conductor plate 320. The conductor plate 320 is connected to the conductor plate 318 by an intermediate electrode 169 and is connected to an AC terminal 159. The emitter electrode of the IGBT 330 and the anode electrode of the lower arm side diode 166 are connected via a conductor plate 319. A DC negative terminal 158 is connected to the conductor plate 319. Three signal terminals 325L are connected in parallel to the gate electrode 164 of the IGBT 330. A signal terminal 336L is connected to the signal emitter electrode 165 of the IGBT 330.

  FIG. 8 is a diagram illustrating the DC bus bar mold 50. FIG. 8A is an external perspective view of the DC bus bar mold 50, as viewed from the bottom surface side of the power converter 200. FIG. 8B is an external perspective view of the DC bus bar mold 50, as viewed from the upper cover 3 side of the power converter 200. FIG. 8C is an exploded view of the DC bus bar mold 50 for each component.

  As shown in the exploded view of FIG. 8C, the DC bus bar mold 50 includes a negative electrode bus bar 501N, an insulating sheet 501IN, a positive electrode bus bar 501P, and a DC bus bar mold resin 501R. The negative electrode bus bar 501N and the positive electrode bus bar 501P form a laminated structure with the insulating sheet 501IN interposed therebetween. Then, the laminated conductor composed of the negative electrode bus bar 501N, the insulating sheet 501IN, and the positive electrode bus bar 501P is integrally molded with the DC bus bar mold resin 501R as shown in FIG. The DC bus bar mold resin 501R is molded into a plate shape having a wide surface.

  Terminals 501N-B, 501N-C, 501N-I, and 501N-Y are formed on the negative electrode bus bar 501N. Terminal 501N-B is connected to the negative electrode of battery 136 via DC high-voltage connector 60 shown in FIG. Terminal 501N-C is connected to the negative electrode of capacitor element 500. The terminal 501N-I is connected to the DC negative terminal 158 of the power semiconductor module 300.

  Terminals 501P-B, 501P-C, 501P-I, and 501P-Y are formed on the positive electrode bus bar 501P. Terminal 501P-B is connected to the positive electrode of battery 136 via DC high-voltage connector 60 shown in FIG. Terminal 501P-C is connected to the positive electrode of capacitor element 500. The terminal 501P-I is connected to the DC positive terminal 158 of the power semiconductor module 300.

  The terminals 501N-B, 501N-C, and 501N-Y of the negative electrode bus bar 501N and the terminals 501P-B, 501P-C, and 501P-Y of the positive electrode bus bar 501P are formed to protrude from one surface of the DC bus bar mold resin 501R. The The terminals 501N-I and 501P-I are formed to protrude from the other surface of the DC bus bar mold resin 501R. Two sets of terminals 501N-I and 501P-I are formed along the long side of the DC bus bar mold resin 501R. That is, the terminals 501N-I and 501P-I protrude from one long side, and the terminals 501N-I and 501P-I protrude from the other long side. The ends of the terminals 501N-B and 501P-B are bent and protrude from the short side of the DC bus bar mold 50.

  As shown in FIG. 8C, two sets of terminals 501N-C are formed on one long side of the negative electrode bus bar 501N, and one set is formed on the other long side. In the positive electrode bus bar 501P, one set of terminals 501P-C is formed on the long side where two sets of negative electrode bus bars 501N are formed, and two sets are formed on the other long side.

  The terminals 501N-Y are formed in the same manner as the terminals 501N-C on the long side of the negative electrode bus bar 501N where the two sets of terminals 501N-C are formed. The terminal 501N-Y is formed at a position closest to the short side where the terminal 501N-B is formed. The terminals 501P-Y are formed in the same manner as the terminals 501P-C on the long side of the positive bus bar 501P where two sets of terminals 501P-C are formed. The terminal 501P-Y is formed at a position closest to the short side where the terminal 501P-B is formed.

  Further, as shown in FIG. 8B, in the DC bus bar mold resin 501R, the partition wall 55 is formed on the surface on the side from which the terminals 501N-I and 501P-I protrude. The partition wall 55 is formed at the center of the two terminals 501P-I formed to protrude from the DC bus bar mold resin 501R.

  FIG. 9 is an exploded view for explaining the arrangement of capacitor elements 500a to 500c, Y capacitor 40N, Y capacitor 40P, capacitor wall 43, ground line 45N, and ground line 45P. The capacitor elements 500a to 500c, the Y capacitor 40N, the Y capacitor 40P, and the capacitor wall 43 are arranged with respect to the flat surface of the DC bus bar mold 50 shown in FIG. The Y capacitor 40N and the Y capacitor 40P have a ground electrode, a positive electrode, and a negative electrode, and have a function of removing noise.

  The capacitor elements 500a, 500b, and 500c are flat type capacitors. These capacitor elements serve as smoothing capacitors. The capacitor element 500a is disposed between the terminal 501N-C and the terminal 501P-C. One end of the capacitor element 500a is connected to the terminal 501N-C. The other end of the capacitor element 500a is connected to the terminal 501P-C.

  Capacitor element 500b is arranged on the side of capacitor element 500a. Similarly to the capacitor element 500a, the capacitor element 500b is disposed between the terminal 501N-C and the terminal 501P-C. One end of the capacitor element 500b is connected to the terminal 501P-C. The other end of the capacitor element 500b is connected to the terminal 501N-C.

  Capacitor element 500c is located on the side of capacitor element 500b and on the opposite side of capacitor element 500a with respect to capacitor element 500b. The capacitor element 500c is disposed at a position closer to the terminals 501N-B and 501P-B than the other capacitor elements 500a and 500b. Similarly to the capacitor element 500a, the capacitor element 500c is disposed between the terminal 501N-C and the terminal 501P-C. Connection with the terminal 501N-C and the terminal 501P-C is similar to that of the capacitor element 500a.

  Y capacitor 40N is arranged on the side of capacitor element 500c. Y capacitor 40P is arranged on the side of capacitor element 500c and Y capacitor 40N. The Y capacitors 40N and 40P are arranged at positions closer to the terminals 501N-B and 501P-B than the capacitor element 500c. The Y capacitors 40N and 40P are installed for noise countermeasures.

  The ground line 45N is connected to the Y capacitor 40N. The ground line 45P is connected to the Y capacitor 40P. The ground lines 45N and 45P are connected to the flow path forming body 12 described later with reference to FIG.

  The capacitor wall 43 is formed to surround the capacitor elements 500a to 500c and the Y capacitors 40P and 40N.

  FIG. 10 is an external perspective view of the capacitor module 4 as viewed from the bottom side of the power converter 200. FIG. 10 shows a state in which the capacitor wall 43 is bonded to the flat surface of the DC bus bar mold 50 and filled with the sealing resin 42 from the state shown in FIG. The ground wire 45N protrudes from the sealing resin 42 and extends to the side portion of the terminal 501N-B. The ground wire 45P protrudes from the sealing resin 42 and extends to the side portion of the terminal 501P-B.

  FIG. 11 is an external view of the bus bar module 90. (A) And (c) is a side view, (b) is a top view. The bus bar module 90 is obtained by molding an AC bus bar group 802 with a resin 92. The resin 92 is formed from a material having electrical insulation performance. The AC bus bar group 802 includes AC bus bar terminals 802U-1, 802U-2, 802V-1, 802V-2, 802W-1, 802W-2, 802U-1a, 802U-2a, 802V-1a, 802V-2a, 802W. -1a, 802W-2a.

  AC bus bar terminals 802U-1, 802V-1, and 802W-1 are output terminals to motor generator MG1. AC bus bar terminals 802U-2, 802V-2, and 802W-2 are output terminals to motor generator MG2. AC bus bar terminals 802U-1a, 802V-1a, and 802W-1a correspond to AC terminal 159 of the power semiconductor module connected to motor generator MG1 shown in FIG. AC bus bar terminals 802U-2a, 802V-2a, and 802W-2a correspond to AC terminal 159 of the power semiconductor module connected to motor generator MG2.

  The AC bus bar terminals 802U-1, 802V-1, 802W-1, 802U-2, 802V-2, 802W-2 are formed on one side of the bus bar module 90. AC bus bar terminals 802U-1, 802U-2, 802V-1, 802V-2, 802W-1, and 802W-2 project in the same direction.

  AC bus bar terminals 802V-1a, 802W-1a, and 802V-2a are formed on the same side as AC bus bar terminal 802U-1. The AC bus bar terminals 802U-1a, 802U-2a, and 802W-2a are formed on the side opposite to the side on which the AC bus bar terminals 802V-1a, 802W-1a, and 802V-2a of the bus bar module 90 are formed. .

  As shown in FIG. 11C, a partition wall 95 is formed on one of the wide surfaces of the bus bar module 90. The surface on which the partition wall 95 is formed is a surface facing the flow path forming body 12 described later.

  A support portion 93 is formed on the surface opposite to the surface on which the partition wall 95 is formed. In FIG. 11, only a part of the support portion 93 is given a reference because the drawing becomes complicated. The support portion 93 is formed so as to protrude from the mold resin 92. The support portion 93 is screwed with a screw hole for screwing a male screw.

  FIG. 12 is an internal structure diagram for explaining the layout of the AC bus bar group 802 in the bus bar module 90. AC bus bar terminal 802U-1a is connected to AC bus bar terminal 802U-1. AC bus bar terminal 802V-1a is connected to AC bus bar terminal 802V-1. AC bus bar terminal 802W-1a is connected to AC bus bar terminal 802W-1. AC bus bar terminal 802U-2a is connected to AC bus bar terminal 802U-2. AC bus bar terminal 802V-2a is connected to AC bus bar terminal 802V-2. AC bus bar terminal 802W-2a is connected to AC bus bar terminal 802W-2.

  FIG. 13 is a perspective view of the AC bus bar group 802. The AC bus bar main body 802 </ b> A is a portion covered with the mold resin 92. AC bus bar main body 802A includes AC bus bar terminals 802U-1, 802U-2, 802V-1, 802V-2, 802W-1, 802W-2, 802U-1a, 802U-2a, 802V-1a, 802V-2a, It is formed wider than 802W-1a and 802W-2a.

  Subsequently, an assembly procedure of the power conversion device 200 will be described. FIG. 14 is a perspective view showing the configuration of the flow path module 130. The flow path module 130 includes the flow path forming body 12 and power semiconductor modules 300U-1, 300V-1, 300W-1, 300U-2, 300V-2, 300W-2.

  The flow path forming body 12 has a wide surface and a first side wall 121 and a second side wall 122 (see FIG. 21) connected to the surface. The first side wall 121 is formed on the side surface on the long side of the flow path forming body 12. The second side wall 122 is formed on the side surface facing the first side wall 121.

  An opening 123 is formed in the first side wall 121. In this embodiment, three openings 123 are formed in the first side wall 121. Similarly, an opening 123 is formed in the second side wall 122. In the present embodiment, three openings 123 are formed in the second side wall 122.

  An opening 124 is formed on a wide surface of the flow path forming body 12. The opening 124 is an opening formed at a position facing the upper cover 3 of the power conversion device 200. In the flow path forming body 12, an opening 125 is formed on the surface facing the opening 124. The opening 125 is an opening formed on the bottom surface side of the power conversion device 200.

  The power semiconductor modules 300U-1, 300V-1, 300W-1, 300U-2, 300V-2, and 300W-2 cover the opening 123 in the opening 123 formed in the flow path forming body 12. Placed in. The power semiconductor modules 300 </ b> V- 1, 300 </ b> W- 1 and 300 </ b> V- 2 are disposed in the opening 123 formed in the first side wall 121. The power semiconductor modules 300U-1, 300U-2, 300W-2 are disposed in the opening 123 formed in the second side wall 122. The power semiconductor module 300U-1 is arranged such that the signal terminals 325U and 325L of the power semiconductor module 300U-1 extend toward the upper cover 3 of the power conversion device 200. The same applies to the other power semiconductor modules 300V-1, 300W-1, 300U-2, 300V-2, and 300W-2.

  FIG. 15 is a perspective view showing an assembly procedure of the flow path module 130 and the capacitor module 4. The capacitor module 4 is disposed so as to close the opening 125 of the flow path module 130 shown in FIG. The capacitor module 4 is inserted into the opening 125 via the gasket 131.

  FIG. 16 is a perspective view showing an assembly procedure of the flow path module 130 and the bus bar module 90. The bus bar module 90 is disposed so as to close the opening 124 of the flow path module 130 shown in FIG. The bus bar module 90 is inserted into the opening 124 via the gasket 91.

  FIG. 17 is a perspective view illustrating an assembling procedure of the base plate 30 and the circuit board 20. The base plate 30 is a metal plate member. The base plate 30 is disposed on the bus bar module 90 attached to the flow path module 130 as shown in FIG. A cover connecting portion 31 for connecting to the cover 10 is formed on the base plate 30. Base plate 30 is fixed to mold resin 92 of bus bar module 90. Further, the circuit board 20 is disposed on the base plate 30. A connector 21 is formed on the circuit board 20.

  FIG. 18 shows a state where the base plate 30 and the circuit board 20 shown in FIG. 17 attached to the bus bar module 90 are stored in the case 10. The case 10 has openings 10a, 10b, and 10c. As described with reference to FIG. 4, the openings 10 a are provided with the pipes 13 and 14. A DC high voltage connector 60 is connected to the opening 10b. The DC high voltage connector 60 is connected to the terminals 501N-B and 501P-B of the capacitor module 4 in the case 10. A side cover assembly 70 is disposed in the opening 10 c via a gasket 71. The side cover assembly 70 will be described with reference to FIG.

  FIG. 19 is an exploded perspective view of the side cover assembly 70. The side cover assembly 70 includes a side cover 73, a discharge resistor 41, and current sensors 180-1 and 180-2. The side cover assembly 70 is formed with openings for passing through the AC bus bar terminals 802U-1, 802V-1, 802W-1, 802U-2, 802V-2, 802W-2. The discharge resistor 41 and the current sensors 180-1 and 180-2 are fixed to the side cover 73 with screws.

  20 is a diagram showing a state in which the DC high-voltage connector 60 and the side cover assembly 70 are attached from the state shown in FIG. When the pipes 13 and 14 and the upper cover 3 are attached from the state shown in FIG. 20, the state shown in FIG. 4 is obtained, and the power conversion device 200 is completed.

  21 is a cross-sectional view taken along the cross-section B shown in FIG. 20 and viewed from the direction of the arrow. As described above, the flow path forming body 12 is formed with the first side wall 121 and the second side wall 122. Openings 123 (see FIG. 14) are formed in the first side wall 121 and the second side wall 122, respectively.

  The opening 123 (see FIG. 14) is closed by the power semiconductor module. In FIG. 21, the opening 123 is closed by the power semiconductor module 300W-1 and the power semiconductor module 300U-2. The power semiconductor module 300W-1 is disposed so as to protrude into the flow path forming body 12 up to a position where the opening 124 and the facing portion are formed. That is, a coolant channel space facing each other is formed between the power semiconductor module 300W-1 and the bus bar module 90. Similarly to the power semiconductor module 300W-1, the power semiconductor module 300U-2 is disposed so as to protrude into the flow path forming body 12 up to a position where the opening 124 and the facing portion are formed. That is, a coolant channel space facing each other is formed between the power semiconductor module 300U-2 and the bus bar module 90.

  The partition wall 95 of the bus bar module 90 is formed so as to protrude into the flow path forming body 12. Further, the partition wall 95 is formed to extend to a space between the power semiconductor module inserted from the first side wall 121 and the power semiconductor module inserted from the second side wall 122. In FIG. 21, the partition wall 95 is formed to extend to the space between the power semiconductor module 300W-1 and the power semiconductor module 300U-2.

  The power semiconductor module 300W-1 is arranged so as to form a facing portion with the opening 125 as well. That is, a coolant channel space facing each other is formed between the power semiconductor module 300W-1 and the capacitor module 4. Similarly, the power semiconductor module 300U-2 is arranged to face the capacitor module 4.

  The partition wall 55 of the capacitor module 4 is formed so as to protrude into the flow path forming body 12. Further, the partition wall 55 is formed to extend to a space between the power semiconductor module inserted from the first side wall 121 and the power semiconductor module inserted from the second side wall 122. In FIG. 21, the partition wall 95 is formed to extend to the space between the power semiconductor module 300W-1 and the power semiconductor module 300U-2.

  Further, since the DC bus bar mold 50 and the bus bar module 90 embed a metal bus bar whose strength is higher than that of the resin material, the occurrence of distortion is suppressed. Thereby, when the opening part of the flow-path formation body 12 is plugged up, generation | occurrence | production of a water leak can be suppressed.

  FIG. 22 is an enlarged view of a region C shown in FIG. The first space 126 is a space formed between the first heat radiation surface 307A of the power semiconductor module 300W-1 and the bus bar module 90. From the first heat radiating surface 307A of the power semiconductor module 300W-1, cooling fins 305A protruding toward the bus bar module 90 are formed. The second space 127 is a space formed between the second heat radiation surface 307 </ b> B of the power semiconductor module 300 </ b> W- 1 and the DC bus bar mold 50 of the capacitor module 4. Cooling fins 305B projecting toward the capacitor module 4 are formed from the second heat radiation surface 307B of the power semiconductor module 300W-1.

  Further, the distance between the power semiconductor module and the DC bus bar mold 50 can be easily adjusted by changing the thickness of the DC bus bar mold 50. By changing the thickness of the bus bar module 90, the distance between the power semiconductor module and the bus bar module 90 can be easily adjusted. Thereby, the flow velocity of the refrigerant flowing along the power semiconductor module can be easily adjusted. Therefore, it is possible to suppress the bypass flow flowing at the tips of the cooling fins 305A and the cooling fins 305B.

3: upper cover, 4: capacitor module, 10: cover, 10a: opening, 10b: opening, 10c: opening, 12: flow path forming body, 13: piping, 14: piping, 20: circuit board, 21 : Connector, 30: Base plate, 31: Cover connection part, 40: Y capacitor, 40P, 40N, 41: Discharge resistance, 42: Sealing resin, 43: Capacitor wall, 45P, 45N: Ground wire 50: DC bus bar mold 55: Bulkhead, 60: DC high-voltage connector, 61P, 61N: DC input cable, 70: Side cover ASSY, 71: Gasket, 73: Side cover, 90: Bus bar module, 90: Resin, 91: Gasket, 92: Mold resin, 93: support, 95: partition, 121: first side wall, 122: second side wall, 123: opening, 124: opening, 1 5: opening, 130: flow path module, 131: gasket, 136: battery, 138: DC connector, 140: inverter circuit, 142: inverter circuit, 150: series circuit, 153: collector electrode, 154: gate electrode, 155 : Signal emitter electrode, 156: Diode, 157: DC positive terminal, 158: DC negative terminal, 159: AC terminal, 163: Collector electrode, 164: Gate electrode, 165: Signal emitter electrode, 166: Diode, 169: Intermediate electrode, 172: control circuit, 174: driver circuit, 180: current sensor, 188: AC terminal, 189: AC terminal, 200: power converter, 300, 300U-1, 300V-1, 300W-1, 300U- 2, 300V-2, 300W-2: power semiconductor module, 304: Joule case, 304A: thin part, 304B: flange, 305A, 305B: cooling fin, 307A: first heat radiating surface, 307B: second heat radiating surface, 315, 318, 319, 320: conductor plate, 325U, 325L: signal terminal 328: IGBT, 330: IGBT, 336U, 336L: signal terminal, 500a to 500c: capacitor element, 501: bus bar, 501IN: insulating sheet, 501N: negative electrode bus bar, 501P: positive electrode bus bar, 501N-B, 501P-B: Terminal, 501N-C, 501P-C: Terminal, 501N-I, 501P-I: Terminal, 501N-Y, 501P-Y: Terminal, 501R: DC bus bar mold resin, 504: Negative side capacitor terminal, 506: Positive side Capacitor terminal, 508: Negative power supply terminal, 509: Positive power supply Terminal, 608: Wiring insulation part, 802: AC bus bar group, 802U-1, 802V-1, 802W-1, 802U-2, 802V-2, 802W-2: AC bus bar terminal

Claims (12)

A power semiconductor module having a power semiconductor element for converting a direct current into an alternating current;
A flow path forming body that forms a flow path through which the cooling refrigerant flows;
A bus bar module that seals the alternating current bus bar that transmits the alternating current with an insulating resin material,
The flow path forming body forms first and second openings connected to the flow path,
The power semiconductor module is disposed in the flow path forming body so as to close the first opening,
The bus bar module is a power conversion device arranged in the flow path forming body so as to close the second opening. The power conversion device according to claim 1,
A part of the power semiconductor module protrudes to a position facing the second opening in the flow path,
A power conversion device in which a first space in which the cooling refrigerant flows is formed in a space between a part of the power semiconductor module and the bus bar module. The power conversion device according to claim 2,
The power semiconductor module includes a first fin that protrudes in a direction in which the bus bar module is disposed. The power conversion device according to any one of claims 1 to 3,
The power semiconductor module is composed of first and second power semiconductor modules,
The flow path forming body has first and second side walls facing each other and forms a plurality of the first openings,
The plurality of first openings are formed separately on the first and second side walls, respectively.
The first power semiconductor module is disposed so as to close the first opening on the first sidewall side,
The second power semiconductor module is disposed so as to close the first opening on the second sidewall side,
The bus bar module has a partition wall that protrudes into the flow path and is disposed in a space between the first power semiconductor module and the second power semiconductor module. The power conversion device according to claim 1,
A capacitor module having a capacitor element for smoothing the direct current,
It said channel member forms a third opening connected to the flow channel,
The capacitor module, the third power converter is arranged in the channel member so as to close the opening. The power conversion device according to claim 5,
The capacitor module has a capacitor side conductor plate connected to the capacitor element,
The capacitor element is disposed in a position facing the third opening,
The capacitor-side conductor plate, said third power converter which is arranged between the opening and the capacitor element. The power conversion device according to claim 5,
The capacitor module has a case for storing the capacitor element, and a resin sealing material disposed between the case and the capacitor element,
The power conversion device in which the case closes the third opening by a bottom surface opposite to an exposed surface from which the resin sealing material is exposed. The power conversion device according to any one of claims 5 to 7,
A part of the power semiconductor module protrudes to a position facing the third opening in the flow path,
A power conversion device in which a second space in which the cooling refrigerant flows is formed in a space between a part of the power semiconductor module and the capacitor module. The power conversion device according to claim 8, wherein
The power semiconductor module includes a second fin that protrudes in a direction in which the capacitor module is disposed. The power conversion device according to any one of claims 5 to 9,
The power semiconductor module is composed of first and second power semiconductor modules,
The flow path forming body has first and second side walls facing each other and forms a plurality of the first openings,
The plurality of first openings are formed separately on the first and second side walls, respectively.
The first power semiconductor module is disposed so as to close the first opening on the first sidewall side,
The second power semiconductor module is disposed so as to close the first opening on the second sidewall side,
The capacitor module includes a partition wall that protrudes into the flow path and is disposed in a space between the first power semiconductor module and the second power semiconductor module. The power conversion device according to any one of claims 1 to 10,
A circuit board on which a drive circuit for driving the power semiconductor element is mounted;
A metal base plate,
A metal housing that houses the power semiconductor module, the flow path forming body, the bus bar module, the circuit board, and the base plate;
The circuit board is disposed to face the bus bar module via the base plate,
Furthermore, the circuit board is supported by a support portion extending from the bus bar module,
The base plate is a power conversion device connected to the housing. The power conversion device according to any one of claims 1 to 11,
The AC bus bar is constituted by a protruding AC terminal portion protruding from the resin material, and an AC bus bar main body portion formed larger in the width direction than the protruding AC terminal portion,
The AC bus bar main body is a power conversion device arranged at a position facing the flow path of the flow path forming body.