JP6039356B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device mounted on an electric vehicle (EV), a hybrid vehicle (HEV), or the like.

  In an electric vehicle (EV) and a hybrid vehicle (HEV), a power conversion device for driving a traveling rotating electrical machine by battery power is mounted. In power converters for electric vehicles or hybrid vehicles, there is a strong demand for downsizing of the device from the viewpoint of securing a living space.

  In consideration of power performance, noise, and the like, the shorter the wiring for supplying power from the power conversion device to the motor, the better. The power conversion device is preferably disposed in the vicinity of the motor, for example, disposed above and below the motor. There are many cases. In such an arrangement, it is necessary to keep the height dimension of the power conversion device as small as possible in order to secure a vehicle interior space, under the restriction of a large arrangement space in the vertical direction of the power conversion device.

  As a conventional technique for reducing the arrangement space of the power conversion device, for example, Patent Document 1 discloses a method for reducing the size by mounting a power semiconductor module and a capacitor on the outer periphery of the motor stator and making it an electromechanical integrated type. ing. According to Patent Document 1, it is described that a refrigerant for cooling the power conversion device flows into the capacitor side refrigerant flow path after flowing through the refrigerant flow path on the power semiconductor module side.

JP 2010-213447 A

  However, as shown in Patent Document 1 above, in the case of an electromechanically integrated configuration in which a power semiconductor module and a capacitor are mounted on the outer peripheral surface side of the motor stator, the structure and outer shape of the power semiconductor module and the capacitor are different for each motor model. There arise problems such as the need to design and the lack of flexibility in changing the layout. Moreover, in said patent document 1, consideration is not made | formed from the viewpoint of electric power loss and cooling performance about the arrangement configuration of the DC side bus bar which electrically connects a some power semiconductor module and a capacitor | condenser.

  Therefore, in order to solve the above-described problems, the present invention provides a power conversion device that does not have an electromechanical integrated configuration, but has a thinner height and improved cooling performance. For the purpose.

To achieve the above object, a power converting apparatus according to an embodiment of the present invention converts the plurality of capacitor elements to smooth the dc voltage, a DC current from said plurality of capacitor elements in the alternating current of a plurality of phases a plurality of power semiconductor modules one lifting an inverter circuit, and the bus bar for electrically connecting the plurality of capacitor elements and the plurality of power semiconductor modules, a DC positive electrode which protrudes from each of the plurality of power semiconductor module And the negative electrode terminal, wherein the plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row, and the plurality of capacitor elements are housed in the housing case. The plurality of power semiconductor modules are arranged side by side along a direction parallel to the arrangement direction of the same row, and the bus bars are arranged in the plurality of power semiconductor modules. The first region and the plurality of arranged in the space between the arranged second region of the capacitor element Rutotomoni, same column arrangement direction of the plurality of power semiconductor modules same column arrangement of the power semiconductor module Are formed along the same row arrangement direction of the plurality of power semiconductor modules so as to face the direct current positive electrode and the negative electrode terminal respectively provided in the storage case, and the storage case and each of the plurality of power semiconductor modules The heat dissipation part has a thin part that connects the heat dissipating parts, and the heat dissipating part is brought into contact with the heat dissipating surfaces of the plurality of power semiconductor modules by deformation of the thin part. To do .

In order to achieve the above object, a power conversion device according to another embodiment of the present invention includes a plurality of capacitor elements that smooth DC voltage, and a DC current from the plurality of capacitor elements is converted into a plurality of phases of AC current. A plurality of power semiconductor modules having an inverter circuit, a bus bar for electrically connecting the plurality of capacitor elements and the plurality of power semiconductor modules, and a direct current positive electrode provided protruding from each of the plurality of power semiconductor modules And the negative electrode terminal , wherein the plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row, and the plurality of capacitor elements are housed in the housing case. Arranged along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules, the bus bar, The plurality of power semiconductor modules are disposed on the one side surface on the same row of the plurality of power semiconductor modules and on the one side surface side opposite to the arrangement side of the plurality of capacitor elements. Of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the direction of the one side surface, and further, the bus bar, A bent portion that bends from the one side surface to the other side surface of the plurality of power semiconductor modules is formed and extends to a lower surface side of the plurality of power semiconductor modules and the plurality of capacitor elements. The present invention is characterized in that an existing extension portion is formed .

  According to the present invention, the power loss of the power conversion device can be reduced, so that the cooling performance can be improved. Further, the height of the power conversion device can be reduced and the thickness can be reduced.

It is a conceptual diagram which shows the control block of the hybrid vehicle carrying the power converter device which concerns on the 1st Embodiment of this invention. It is a schematic diagram which shows the arrangement place in the vehicle in the power converter device which concerns on this embodiment. It is a figure which shows the connection structure of the electric circuit containing the inverter circuit in the power converter device which concerns on this embodiment. It is an appearance perspective view of the power converter concerning this embodiment. It is a perspective view which removes a housing | casing from the power converter device which concerns on 1st Embodiment, and shows arrangement | positioning of a power semiconductor module unit, a capacitor | condenser module unit, and a bus-bar unit. It is a disassembled perspective view which shows each unit, the flow-path formation body, and housing | casing in the power converter device which concerns on this embodiment. It is a perspective view which shows the terminal structure of the power semiconductor module regarding this embodiment. It is sectional drawing of the power semiconductor module in the cut surface of the AA line shown in FIG. It is a circuit diagram which shows the built-in circuit structure of the power semiconductor module regarding this embodiment. It is an assembly exploded view of the built-in circuit of the power semiconductor module regarding this embodiment. It is a perspective view after the assembly of the built-in circuit of the power semiconductor module regarding this embodiment. It is a perspective view which shows arrangement | positioning of the power semiconductor module unit in the power converter device which concerns on this embodiment, a flow-path formation body, and a bus-bar unit. It is a disassembled perspective view which shows the power semiconductor module unit in the power converter device which concerns on this embodiment, a flow-path formation body, and a bus-bar unit. It is sectional drawing of the power semiconductor module in the cut surface of the BB line shown in FIG. 12, and metal cases which accommodate it. It is sectional drawing which shows the deformation | transformation structural example of the metal case for accommodation of the power semiconductor module shown in FIG. It is a perspective view which shows arrangement | positioning of the capacitor | condenser unit in the power converter device which concerns on this embodiment, and a bus-bar unit. It is a disassembled perspective view which shows the capacitor | condenser unit and bus bar unit in the power converter device which concerns on this embodiment. It is a perspective view which removes a housing | casing from the power converter device which concerns on the 2nd Embodiment of this invention, and shows arrangement | positioning of a power semiconductor module unit, a capacitor | condenser module unit, and a bus-bar unit. It is a disassembled perspective view which shows the power semiconductor module unit, capacitor | condenser module unit, and bus-bar unit in the power converter device which concerns on 2nd Embodiment. It is a perspective view which shows arrangement | positioning of a power semiconductor module unit, a capacitor | condenser module unit, and a bus-bar unit by removing a housing | casing from the power converter device which concerns on the 3rd Embodiment of this invention. It is a disassembled perspective view which shows the power semiconductor module unit in the power converter device which concerns on 3rd Embodiment, a capacitor | condenser module unit, and a bus-bar unit. It is a perspective view showing arrangement of a power semiconductor module unit, a capacitor module unit, a bus bar unit, and a magnetic interference suppression member in a power converter concerning a 4th embodiment of the present invention. It is a top view which shows arrangement | positioning of the power semiconductor module unit in a power converter device which concerns on 4th Embodiment, a capacitor | condenser module unit, a bus-bar unit, and a magnetic interference suppression member. It is a schematic perspective view which shows arrangement | positioning of the power semiconductor module unit in a power converter device which concerns on the 5th Embodiment of this invention, a capacitor | condenser module unit, a bus-bar unit, and the flow-path formation path for cooling. It is a disassembled perspective view which shows arrangement | positioning of the power semiconductor module unit in a power converter device which concerns on 5th Embodiment, a capacitor | condenser module unit, a bus-bar unit, and a flow-path formation body, and arrangement | positioning of the flow-path formation channel | path for cooling.

  Hereinafter, power converters according to first to fifth embodiments of the present invention will be described with reference to the drawings. First, the power converter device which concerns on the 1st Embodiment of this invention is demonstrated with reference to FIGS. The configurations shown in FIGS. 1 to 4 show the basic technology common to the power conversion devices according to the second to fifth embodiments of the present invention, and are not limited to the first embodiment. . The power conversion devices according to the first to fifth embodiments of the present invention are not limited to HEV (hybrid electric vehicle, hereinafter referred to as “HEV”), but also plug-in hybrid electric vehicles, It can be applied to power conversion devices mounted on vehicles such as “PHEV” or electric vehicles (hereinafter referred to as “EV”). The present invention can also be applied to a conversion device.

  In FIG. 1, engine EGN and motor generator MG1 generate vehicle running torque. Motor generator MG1 not only generates rotational torque but also has a function of converting mechanical energy applied from the outside to motor generator MG1 into electric power. The motor generator MG1 is, for example, a synchronous machine or an induction machine, and operates as a motor or a generator depending on the operation method as described above. When motor generator MG1 is mounted on an automobile, it is desirable to obtain a small and high output, and a permanent magnet type synchronous motor using a magnet such as neodymium is suitable. In addition, the permanent magnet type synchronous motor generates less heat in the rotor than the induction motor, and is excellent for automobiles from this viewpoint.

  The output torque on the output side of the engine EGN is transmitted to the motor generator MG1 via the power distribution mechanism TSM, and the rotation torque from the power distribution mechanism TSM or the rotation torque generated by the motor generator MG1 is transmitted via the transmission TM and the differential gear DEF. Transmitted to the wheels.

  On the other hand, during regenerative braking operation, rotational torque is transmitted from the wheels to motor generator MG1, and AC power is generated based on the supplied rotational torque. The generated AC power is converted into DC power by a power conversion device 200 described later, and the high-voltage battery 136 is charged, and the charged power is used again as travel energy.

Next, the power conversion device 200 will be described. The inverter circuit 140 provided in the power converter 200 is electrically connected to the battery 136 via the DC connector 138, and power is exchanged between the battery 136 and the inverter circuit 140. When motor generator MG1 is operated as a motor, inverter circuit 140 generates AC power based on DC power supplied from battery 136 via DC connector 138, and supplies it to motor generator MG1 via AC connector 188. . The configuration including motor generator MG1 and inverter circuit 140 operates as a motor generator unit.

  In the embodiment of the present invention, the vehicle can be driven only by the power of motor generator MG1 by operating the motor generator unit as an electric unit by the electric power of battery 136. Furthermore, in the embodiment of the present invention, the battery 136 can be charged by generating electric power by operating the motor generator unit as a power generation unit by the power of the engine EGN or the power from the wheels.

  Although omitted in FIG. 1, the battery 136 is also used as a power source for driving an auxiliary motor. The auxiliary motor is, for example, a motor for driving a compressor of an air conditioner or a motor for driving a control hydraulic pump. DC power is supplied from the battery 136 to the power semiconductor module for auxiliary machinery, and the power semiconductor module for auxiliary machinery generates AC power and supplies it to the motor for auxiliary machinery. The auxiliary power semiconductor module has basically the same circuit configuration and function as the inverter circuit 140, and controls the phase, frequency, and power of alternating current supplied to the auxiliary motor.

  Further, the power conversion device 200 includes a capacitor 500 for smoothing the DC power supplied to the inverter circuit 140.

  The power conversion device 200 includes a signal connector 21 for receiving a command from a host control device or transmitting data representing a state to the host control device. Power conversion device 200 calculates a control amount of motor generator MG1 by control circuit 172 based on a command input from signal connector 21, and further calculates whether motor generator MG1 operates as a motor or a generator. To do. The power conversion device 200 generates a control pulse based on the calculation result, and supplies the generated control pulse to the driver circuit 174. The driver circuit 174 generates a driving pulse for controlling the inverter circuit 140 based on the supplied control pulse.

  FIG. 2 schematically shows the location of the power conversion device 200 in the vehicle. The engine EGN and the transmission TM are arranged in this order from the front of the vehicle, and the power conversion device 200 is arranged below the casing of the transmission TM. A motor generator MG1 is arranged in front of the case of transmission TM (above power converter 200). Here, from the viewpoint of space saving, the smaller the arrangement space of the power conversion device 200, the better. The shorter the wiring for supplying power from power conversion device 200 to motor generator MG1, the better. Power conversion device 200 is preferably arranged in the vicinity of motor generator MG1.

  Due to such circumstances, the power conversion device 200 is often arranged in a narrow space such as the lower part of the transmission TM as shown in FIG. 2, and the power conversion device 200 is desired to be reduced in size and thickness. Yes. The arrangement shown in FIG. 2 is an example, and is provided on the in-case engine side of the transmission TM or built in the bell housing.

  Next, the configuration of the electric circuit of the inverter circuit 140 will be described with reference to FIG. Note that an insulated gate bipolar transistor is used as the switching power semiconductor element, and is hereinafter abbreviated as IGBT. The IGBT 328 and the diode 156 that operate as the upper arm, and the IGBT 330 and the diode 166 that operate as the lower arm constitute the series circuit 150 of the upper and lower arms. The inverter circuit 140 is provided with the series circuit 150 corresponding to the three phases of the U phase, V phase, and W phase of the AC power to be output.

  These three phases correspond to the three-phase windings of the armature winding of the motor generator MG1 in the embodiment of the present invention. In series circuit 150 of the upper and lower arms of each of the three phases, intermediate electrode 169, which is the middle portion of the series circuit, is connected to motor generator MG1 via AC terminal 159, AC bus bar 802, and AC connector 188. The alternating current output from series circuit 150 is output from intermediate electrode 169 to motor generator MG1 through the above path.

  As shown in FIG. 3, the collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to the capacitor terminal 506 on the positive electrode side of the capacitor 500 via the DC positive electrode terminal 157. The emitter electrode of the IGBT 330 of the lower arm is electrically connected to the capacitor terminal 504 on the negative electrode side of the capacitor 500 via the DC negative electrode terminal 158.

  As shown in FIGS. 1 and 3, the control circuit 172 receives a control command from the host control device via the signal connector 21, and based on this, the upper arm or the lower arm of the series circuit 150 of each phase of the inverter circuit 140. A control pulse that is a control signal for controlling the IGBT 328 and the IGBT 330 constituting the arm is generated and supplied to the driver circuit 174.

  Based on the control pulse, the driver circuit 174 supplies a drive pulse to the IGBT 328 and the IGBT 330 constituting the upper arm or the lower arm of each phase series circuit 150. The IGBT 328 and the IGBT 330 perform conduction or cutoff operation based on the drive pulse from the driver circuit 174, and convert the DC power supplied from the battery 136 into three-phase AC power. The converted electric power is supplied to motor generator MG1.

  The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 includes a collector electrode 163, a signal emitter electrode 165, and a gate electrode 164. The diode 156 is electrically connected between the collector electrode 153 and the emitter electrode 155. The diode 166 is electrically connected between the collector electrode 163 and the emitter electrode 165.

  As the switching power semiconductor element, a metal oxide semiconductor field effect transistor (hereinafter abbreviated as MOSFET) may be used. In this case, the diode 156 and the diode 166 are unnecessary. As a switching power semiconductor element, IGBT is suitable when the DC voltage is relatively high, and MOSFET is suitable when the DC voltage is relatively low.

  As shown in FIG. 3, the capacitor 500 is provided with a positive capacitor terminal 506, a negative capacitor terminal 504, a positive power terminal 509, and a negative power terminal 508. The high-voltage DC power from the battery 136 is supplied to the positive-side power terminal 509 and the negative-side power terminal 508 via the DC connector 138, and the positive-side capacitor terminal 506 and the negative-side capacitor terminal 504 of the capacitor 500. To the inverter circuit 140.

  On the other hand, the DC power converted from AC power by the inverter circuit 140 is supplied to the capacitor 500 from the capacitor terminal 506 on the positive electrode side or the capacitor terminal 504 on the negative electrode side. Further, the DC power is supplied to the battery 136 from the positive power supply terminal 509 and the negative power supply terminal 508 via the DC connector 138 and accumulated in the battery 136.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the IGBT 328 and the IGBT 330. The input information to the microcomputer includes a target torque value required for the motor generator MG1, a current value supplied from the series circuit 150 to the motor generator MG1, and a magnetic pole position of the rotor of the motor generator MG1.

  The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal from a current sensor module 180 (see FIG. 3) described later. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG1. In this embodiment, the case where the current sensor module 180 detects three-phase current values is taken as an example. However, even if the current values for two phases are detected and the current for three phases is obtained by calculation, good.

  The microcomputer in the control circuit 172 calculates the d-axis and q-axis current command values of the motor generator MG1 based on the target torque value, the calculated d-axis and q-axis current command values, and the detected d The voltage command values for the d-axis and q-axis are calculated based on the difference between the current values for the axes and q-axis, and the calculated voltage command values for the d-axis and q-axis are calculated based on the detected magnetic pole position. It is converted into voltage command values for phase, V phase, and W phase. Then, the microcomputer generates a pulse-like modulated wave based on a comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U phase, V phase, and W phase, and the generated modulation wave The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  When driving the lower arm, the driver circuit 174 outputs a drive signal obtained by amplifying the PWM signal to the gate electrode of the corresponding IGBT 330 of the lower arm. Further, when driving the upper arm, the driver circuit 174 amplifies the PWM signal after shifting the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, and uses this as a drive signal as a corresponding upper arm. Are output to the gate electrodes of the IGBTs 328 respectively.

  In addition, the microcomputer in the control circuit 172 detects abnormality (overcurrent, overvoltage, overtemperature, etc.) and protects the series circuit 150. For this reason, sensing information is input to the control circuit 172. For example, information on the current flowing through the emitter electrodes of the IGBTs 328 and IGBTs 330 is input to the corresponding drive units (ICs) from the signal emitter electrode 155 and the signal emitter electrode 165 of each arm. Thereby, each drive part (IC) detects an overcurrent, and when an overcurrent is detected, the switching operation of the corresponding IGBT 328 and IGBT 330 is stopped, and the corresponding IGBT 328 and IGBT 330 are protected from the overcurrent.

  Information on the temperature of the series circuit 150 is input to the microcomputer from a temperature sensor (not shown) provided in the series circuit 150. In addition, voltage information on the DC positive side of the series circuit 150 is input to the microcomputer. The microcomputer performs over-temperature detection and over-voltage detection based on the information, and stops switching operations of all the IGBTs 328 and IGBTs 330 when an over-temperature or over-voltage is detected.

FIG. 4 is an external perspective view of the power converter 200. In order to correspond to the arrangement as shown in FIG. 2, the power conversion device 200 according to the present embodiment employs a configuration described later to keep the overall height of the power conversion device 200 low. The housing 10 is a metal case having a substantially rectangular shape in plan view, and a pipe 13 for flowing a cooling medium (for example, cooling water or the like, hereinafter referred to as a refrigerant) into the housing on the side surface. A refrigerant outflow pipe 14 is provided for flowing out the refrigerant . Reference numerals 508 and 509 are positive and negative power supply terminals for DC input as shown in FIG. 3, and 802U, 802V and 802W are AC bus bar terminals corresponding to the U phase, V phase and W phase. The connector 21 is a signal connector provided for connection to the outside (for example, a host control device).

“First Embodiment”
Next, the structure of the power converter device which concerns on the 1st Embodiment of this invention is demonstrated using FIG. 5 and FIG. FIG. 5 is an exploded perspective view of the internal configuration of the power conversion device 200 according to the first embodiment. 5A is a diagram in which the upper cover 3 shown in FIG. 4 is omitted, and FIG. 5B is a diagram in which the housing 10 shown in FIG. 4 is omitted. FIG. 6 is an exploded view of the flow path forming body 12, the capacitor unit 4, the power semiconductor module unit 5, and the bus bar unit 6 into the housing 10 without the circuit board 20 and the control circuit 172 shown in FIG. .

A case in which the power semiconductor module unit 5 provided with the inverter circuit 140 shown in FIG. 2 is arranged along the longitudinal direction of the casing 10 and a coolant channel is formed on the upper right side of the casing 10 in the figure. The flow path forming body 12 is cooled. On the other hand, in the illustrated lower left side of the housing 10, the capacitor 500 and the U-phase, V-phase, W-joints in alternating bus bar corresponding to the phase 803U, 803V, capacitor unit 4 for accommodating a 803W, the power semiconductor module unit 5 are arranged in parallel with each other and are placed in contact with the floor surface of the housing 10.

A bus bar unit 6 is disposed between the capacitor unit 4 and the power semiconductor module unit 5, and a circuit board 20 having a signal connector 21 shown in FIG. The circuit board 20 is provided with the control circuit 172 and the driver circuit 174 shown in FIG. The upper cover 3 is bolted so as to cover the opening of the housing 10. AC bus bar in joints 803U, 803V, 803W is an AC bus bar holder 800 in a fixed AC busbar terminals 802U, 802V, while being screwed to 802W, AC bus bar holder 800 current sensor module 180 which is installed in (FIG. Current) flowing through each phase is detected.

  The power semiconductor module unit 5 is an upper and lower double-sided cooling system, and by reducing the mounting floor area, the mounting area of the capacitor unit 4 is increased to improve the cooling capacity via the floor surface of the housing 10. The housing 10 can be cooled by the path forming body 12.

  Next, the detailed configuration of the power semiconductor modules 300U to 300W in the power conversion device according to the first embodiment will be described below with reference to FIGS. As shown in FIG. 3, the inverter circuit 140 is provided with a series circuit 150 for each of the U, V, and W phases. The power semiconductor module 300U is provided with a U-phase series circuit 150, the power semiconductor module 300V is provided with a V-phase series circuit 150, and the power semiconductor module 300W is provided with a W-phase series circuit 150. The power semiconductor modules 300U, 300V, and 300W all have the same structure. Here, the power semiconductor module 300U will be described as an example. In the present embodiment, the power semiconductor module 300 exemplifies a module that forms three phases consisting of U, V, and W phases. However, the present invention is not limited to this, and the motor semiconductor generator 300 is assumed to have two phases. You may comprise the rotating magnetic field of MG1.

  FIG. 7 is a perspective view of the power semiconductor module 300U, and FIG. 8 is a cross-sectional view taken along line AA of FIG. As shown in FIG. 8, the power semiconductor module 300U electrically joins the semiconductor elements (IGBTs 328 and 330, diodes 156 and 166) constituting the series circuit 150 to the conductor plates 315 and 320 and the conductor plates 318 and 319 ( 9), and sealed with an insulating mold resin 348.

  FIG. 9 is a circuit diagram showing a built-in circuit configuration of the power semiconductor module 300, FIG. 10 is an exploded view showing a mounting form, and FIG. 11 is a form after assembly. The collector electrode of the IGBT 328 on the upper arm side and the cathode electrode of the diode 156 on the upper arm side are connected to the conductor plate 315 by a metal bonding material 160 (for example, fusion bonding with a solder alloy mainly composed of Sn, Zn, or Bi, silver oxide or oxidation). The connection is made through sintered bonding with fine particles mainly composed of copper or silver (see FIG. 10). A DC positive terminal 157 is connected to the conductor plate 315. The emitter electrode of the IGBT 328 and the anode electrode of the diode 156 on the upper arm side are connected to the conductor plate 318 via the metal bonding material 160. Three signal terminals 325U are electrically connected in parallel through metal wires to the gate electrode 154 of the IGBT 328 shown in FIG. 3 (three terminals 325U are shown in FIG. 7 and two terminals 325U are shown in FIG. 9). Although it is shown and the number of terminals is different, various terminals may be used as control terminals, and the number of terminals may be different).

  On the other hand, the collector electrode of the IGBT 330 on the lower arm side and the cathode electrode of the diode 166 on the lower arm side are connected to the conductor plate 320 via the metal bonding material 160. The conductor plate 320 is connected to the conductor plate 318 via the metal bonding material 160 by the intermediate electrode 169 (see also FIG. 3), and to the AC terminal 159. The emitter electrode of the IGBT 330 and the anode electrode of the diode 166 on the lower arm side are connected to the conductor plate 319 via the metal bonding material 160. A DC negative terminal 158 is connected to the conductor plate 319. Three signal terminals 325L are electrically connected in parallel to the gate electrode 164 of the IGBT 330 via metal wires (not shown). The state after the power semiconductor module 300 is assembled is shown in FIGS.

  From the state shown in FIG. 11, transfer molding is performed with the tie bar 372 sandwiched, and then the tie bar 372 is separated, and as shown in FIG. The power semiconductor element sandwiched between the conductive plates 315, 318, 318, and 320 shown in FIGS. 8 and 9 with the DC negative terminal 158 and the AC terminal 159 (see FIG. 3) partially exposed is insulatively molded. Cover with resin 348 (see FIG. 8). At this time, since the outer surfaces of the conductor plates 315, 318, 319, and 320 sandwiching the power semiconductor element function as heat dissipation surfaces, they are exposed from the insulating mold resin 348 as shown in FIG.

As the insulating mold resin 348 for transfer molding, for example, a resin based on a novolak, polyfunctional, or biphenyl epoxy resin can be used, such as SiO ₂ , Al ₂ O ₃ , AlN, or BN. Ceramics, gel, rubber, or the like is included, and the thermal expansion coefficient is brought close to the conductor plates 315, 320, 318, 319. As a result, the difference in thermal expansion coefficient between the members can be reduced, and the thermal stress generated as the temperature rises in the usage environment is greatly reduced, so that the life of the power semiconductor module 300 can be extended.

  Next, the detailed configuration of the power semiconductor module unit 5 in the power conversion device according to the first embodiment will be described below with reference to FIGS. 12 and 13 are views showing the power semiconductor module unit 5, the flow path forming body 12 which is a case in which a refrigerant flow path is formed, and the bus bar unit 6. FIG. 12 is shown in the figure. FIG. 13 is an exploded perspective view of various components such as the power semiconductor module unit 5 shown in the drawing. FIG. 14 is a view showing a cut surface of line BB shown in FIG.

  The power semiconductor module unit 5 includes power semiconductor modules 300U, 300V, and 300W and a metal case 304 that houses these power semiconductor modules.

As shown in FIG. 13, the flow path forming body 12 functions as a cooler that cools components installed in the refrigerant flow path 120, has a rectangular parallelepiped shape made of metal (for example, aluminum), and has a longitudinal shape. A refrigerant inflow pipe 13 (see FIG. 4) is provided at one end in the direction, and a refrigerant discharge pipe 14 is provided at the opposite end face. On the side surface of the flow path forming body 12, a flow path forming body opening 120A for inserting the metal case 304 containing the power semiconductor modules 300U, 300V, 300W into the refrigerant flow path 120 is formed. The metal case 304 is provided with a flange 307 on the opening side, and the flange 307 is installed in the flow path forming body opening 120A via a sealing material such as an O-ring.

  As shown in FIG. 13, the metal case 304 has a CAN-type watertight structure in which no refrigerant enters the power semiconductor modules 300U, 300V, and 300W. The CAN type is a bottomed cylindrical case having an insertion port provided on one surface. That is, the metal case (storage case) 304 has a structure in which no opening is provided other than the opening into which the power semiconductor modules 300U, 300V, and 300W are inserted, and a flange 307 is provided at the insertion opening. Further, a screw hole for fixing the bus bar unit 6 and the flow path forming body 12 are provided on the insertion port side of the flange 307, and terminals can be drawn out from the insertion port.

  As shown in FIGS. 13 and 14, the metal case 304 is a flat case, and heat is radiated to the positions projected on the conductor plates 315, 318, 319, and 320 which are the heat radiating surfaces of the power semiconductor module to be housed on both the front and back surfaces. A base portion 305 and cooling fins 306 are provided. Further, as shown in the cross-sectional view of FIG. 14, the metal case 304 is provided with a thin portion 304A and a thick portion 304C around the heat dissipation base portion 305, and the heat dissipation base portion 305 is directed to the opposite heat dissipation base portion. When pressed in the vertical direction (FIG. 14), only the thin portion 304A is deformed, so that each semiconductor module can be sandwiched between the pair of heat dissipation base portions 305 in accordance with the respective thicknesses. .

  At this time, insulation is ensured between the conductor plates 315, 318, 319, 320 and the heat dissipation base portion 305 via the insulating layer 333. As the insulating layer 333, a resin containing a high amount of insulating ceramics having high thermal conductivity is used. Thereby, the heat radiating base portion 305 and the conductor plates 315, 318, 319, and 320 are bonded without any gap.

  The metal case 304 is produced by forging and casting a thin base portion 304A, a heat radiation base portion 305 having a fin 306, and a flange 307 having a thick portion 304B, respectively, by laser welding or friction stir welding. Integrate.

  When the metal case 304 is integrated prior to the storage of the power semiconductor module by pressing, as shown in FIG. 14, the entire metal case 304 is not warped and deformed when the power semiconductor module is stored by pressing. A thick portion 304C is further provided between each power semiconductor module.

  On the other hand, when attaching the flange 307 provided with the thick part 304B after connecting the heat radiation base part 305 provided with the thin part 304A and the fin 306 and each power semiconductor module by the insulating layer 333. As shown in FIG. 15, the thick portion 304C between the power semiconductor modules 300U, 300V, and 300W is not necessary. FIG. 15 is a cross-sectional view showing a modified configuration example of the metal case for housing the power semiconductor module shown in FIG. When the above-described integration is performed, the thin portion 304A is provided, and this portion is deformed to handle the stress, whereby the stress generated in the insulating layer 333 can be reduced.

Here, each of the power semiconductor modules 300U, 300V, and 300W has a DC positive terminal 157, a DC negative terminal 158, signal terminals 325U and 325L, and an AC terminal 159 (see FIG. 9) that are connected to the bus bar unit 6 by welding or brazing. The positive terminal relay unit 509a, the negative terminal relay unit 508a, the signal terminal relay unit 340, and the AC terminal relay units 804U, 804V, and 804W (see FIG. 13) are joined and positioned. Thereafter, after being accommodated in the metal case 304 via the insulating layer 333, an insulating sealing resin 351 (omitted in FIG. 13) is left in the remaining space of the metal case 304 including each connection portion with the bus bar unit 6. The power semiconductor module unit 5 is completed by sealing (see FIG. 14), and the insulation reliability can be further improved.

As the insulating sealing resin 351, for example, a resin based on a novolac-based, polyfunctional, or biphenyl-based epoxy resin can be used. In addition, the epoxy resin contains ceramics such as SiO ₂ , Al ₂ O ₃ , AlN, and BN, rubber, and the like, and the thermal expansion coefficient is brought close to the metal case 304 and each semiconductor module. As a result, the difference in thermal expansion coefficient between the insulating layer 333 and the metal case 304 and each semiconductor module can be reduced, and the thermal stress generated as the temperature rises in the usage environment is greatly reduced. It is possible to extend.

  Next, a detailed configuration of the capacitor unit 4 in the power conversion device according to the first embodiment will be described below with reference to FIGS. 16 and 17. 16 and 17 are views showing the bus bar unit 6 and the capacitor unit 4, FIG. 16 is a perspective view of the component shown in the figure, and FIG. 17 is an exploded perspective view of the component shown in the figure. FIG.

As shown in FIG. 17, the capacitor unit 4, a capacitor bus bar comprising a capacitor positive electrode connection terminal 500p and the capacitor negative connection terminal 500n, and 500a plurality of capacitor elements, AC bus bar in joints 803U, 803V, and 803W, It consists of The capacitor positive electrode connection terminal 500p and the capacitor negative electrode connection terminal 500n of the capacitor bus bar are electrically joined to the positive electrode terminal relay portion 509b and the negative electrode terminal relay portion 508b of the bus bar unit 6 by welding or brazing. Electrical connection prior to the capacitor element 500a and the AC bus bar in joints 803U, 803V, 803W is based (insulating base) 19 (see FIG. 5 (b)) to temporarily fix the guide housing 10 floor surface To be able to touch. Between each capacitor element or each AC bus bar and the floor of the housing, a resin is installed to reduce gaps and improve heat dissipation and to ensure insulation. Insulation may be secured by the base (insulating base) 19 itself. In this case, conductive and high heat dissipation grease or resin can be installed.

  The capacitor unit 4 is disposed at a position symmetrical to the power semiconductor module unit 5 with the bus bar unit 6 as a virtual boundary surface. With this arrangement, the power semiconductor modules 300U, 300V, and 300W and the plurality of capacitor elements 500a are disposed close to each other via the bus bar 501 including the positive side bus bar 509 ′ and the negative side bus bar 508 ′ (the capacitor element and the power semiconductor). Since the current flowing between the modules is directly connected by the bus bar 501), it is possible to suppress the resistance loss generated in the bus bar 501 and reduce the heat generation amount. Furthermore, by interposing the bus bar unit 6, heat transfer from the power semiconductor module 300 to the capacitor element 500a can be suppressed, so that the temperature rise of the capacitor element can be reduced, and the reliability and life of the capacitor can be reduced. There is an effect to improve.

  Capacitor element 500a is connected to each AC terminal 159 provided in power semiconductor modules 300U, 300V, and 300W, and is a U, V, and W phase AC bus bar that extends linearly to the opposite side of power semiconductor module unit 5. The relay units 803U, 803V, and 803W of 802 are arranged in parallel. With this parallel arrangement, the height dimension of the power conversion device 200 can be reduced. Furthermore, heat dissipation can be improved by allowing the capacitor unit 4 and the relay portions 803U, 803V, and 803W of the U, V, and W-phase AC bus bars to be close to the floor surface of the housing 10.

  Further, the power semiconductor modules 300U, 300V, and 300W may be arranged in the same number or multiples. As a result, the power supplied from each capacitor element 500a to each power semiconductor module 300U, 300V, 300W is substantially evenly distributed, and excessive power supply from a specific capacitor is suppressed, improving the reliability and life of the capacitor. There is an effect to make.

  Next, the detailed configuration of the bus bar unit 6 in the power conversion device according to the first embodiment will be described below with reference to FIGS. 13 and 17. As shown in FIG. 13 and FIG. 17, the bus bar unit 6 is a pair of layers stacked parallel to the opening side of the metal case 304 that houses the power semiconductor modules 300U, 300V, and 300W of the power semiconductor module unit 5. Positive electrode conductor plate (positive electrode side bus bar) 509 'and negative electrode conductor plate (negative electrode side bus bar) 508'.

  The positive electrode conductor plate 509 ′ is connected to the positive electrode terminal relay portion 509a drawn in the direction of each DC positive electrode terminal 157 (see FIGS. 3 and 9) of the power semiconductor modules 300U, 300V, and 300W, and the positive electrode connection terminal 500p direction of the capacitor 500. And is bent to the opening side (upward in the drawing) of the housing 10. Similarly, the negative electrode conductor plate 508 ′ includes the DC negative terminals 158 of the power semiconductor modules 300U, 300V, and 300W, the negative terminal relay portion 508a and the negative terminal relay portion 508b drawn in the direction of the negative electrode connection terminal 500n of the capacitor 500. And bent toward the opening side of the housing 10.

  The bus bar unit 6 includes AC terminal relays 804U, 804V, 804W connected to the AC terminals 159 of the power semiconductor modules 300U, 300V, 300W, AC bus bar relay units 803U, 803V, 803W, and signal terminals 325U, 325L. A signal terminal relay unit 340 for relaying (see FIG. 8 and FIG. 9) is formed (see FIG. 13). The bus bar unit 6 has a flat shape as shown in the figure, and each connection terminal connected to the bus bar is integrally molded by injection molding or pressure molding using the insulating resin 550.

As described above, in the embodiment of the present invention, the power semiconductor module 300 and the capacitor unit 4 constituting the power converter are arranged on the same plane with respect to the floor surface of the housing 10 (eg, a metal case). Can be made thinner. For this arrangement, the DC positive terminal 157 drawn from the power semiconductor module unit 5, the DC negative terminal 158 and positive electrode connection terminal 500p of the capacitor 500 drawn from the capacitor, a negative electrode connection terminal 500n, a negative that put the bus bar unit 6 align generally coplanar electrode conductor plate 508 ', positive busbar 509' in the plane of the further stack U, V, negative conductor plate 508 you contact W phase ', positive busbar 509' (the sheet The positive and negative electrode conductor plates can be laminated so that their surfaces face each other.

Next, the relationship between the configuration and operation or effect of the power conversion device according to the first embodiment of the present invention will be described below. With the configuration described above in the present embodiment, the power semiconductor module 300 U, 300 V, DC positive terminal 157 of the 300 W, positive Gokuse' connection terminals 500p of the capacitor elements 500a and the DC negative terminal 158, the distance between the negative electrode connection terminal 500n shorter Resistance loss can be reduced. Furthermore, in the effect of reducing the inductance by stacking the 'positive busbar 509 and' negative conductor plate 508, can be suppressed surge voltage generated during switching of the power converter circuit, the loss can be reduced by high-speed switching of the circuit . In addition, by installing the bus bar unit 6 having the above-described configuration and arrangement with respect to the power semiconductor module unit 5 and the capacitor unit 4 constituting the power converter, the inverter circuit 140 can be made thin while reducing the thickness of the power converter. The amount of heat generated from can be reduced.

To the power semiconductor module unit 5 generates heat most is large in the power conversion device, while adopting a high water cooling most cooling capacity by cooling the power semiconductor module unit 5 from the top and bottom surfaces, the power semiconductor module unit 5 Ya The installation bottom area of the cooling channel can be reduced. The capacitor element 500a and the negative electrode conductor plate 508 ', the positive electrode conductor plate 509' can be cooled and the installation bottom surface of the housing 10 (metal case), since the heat dissipation surface is taken widely by thinning, the capacitor element 500a and a bus bar The temperature rise of 501 can be suppressed and the reliability is improved. In this way, it is possible to improve the reliability while reducing the thickness of the power conversion device.

  In this embodiment, as shown in FIGS. 12 and 13, a base 18 provided under the flow path forming body 12 (the base 18 is shown in FIG. 5B, and FIG. The base 18 is provided with a guide groove in a separate structure from the housing 10, and the power semiconductor module unit 5 and the bus bar unit 6 are fitted into the structure. The cooling and the cooling efficiency of the bus bar unit 6 by the housing 10 can be improved. As for the capacitor unit 4, as shown in FIG. 5B, a base (insulating pedestal) 19 can be installed to ensure contact between the housing 10 and each member. Installation of each unit on the base 18 and the base 19 and the orientation of the lead terminal of each unit are aligned with the opening direction of the flange 307, so that the assembly of housing each member in the housing 10 is facilitated and the productivity is improved. To do. Further, by adopting the base 18 or the base 19, there is an effect that it is easy to install the heat dissipating grease and the heat dissipating resin sheet for improving the cooling performance on the bottom surface of each member.

Further, watertight metal case 304 of the power semiconductor module unit 5 has a flange 3 07 to ensure water-tightness, a seal in the flow path forming member opening 120A of the passage forming body 12 Installed. In the present embodiment, three metal cases 304 are not prepared for each of the power semiconductor modules 300U, 300V, and 300W constituting the series circuit of U, V, and W phases, and the structure is built in one case. did. This internal structure, the power semiconductor module 300 U, 300 V, a flange 307 that exist in the interval of 300W can be omitted (the power semiconductor module 300 U, 300 V, the flange per 300W), it is possible reduce the area of the flange 307, the power semiconductor module It becomes possible to arrange the juxtaposition intervals of 300 U, 300 V, and 300 W to the minimum.

Further, linked plurality of power semiconductor modules 300 U, 300 V, a 300W when housed in a metal case 304, a pair of the negative electrode conductor plate 5 08 ', positive busbar 509' to the bus bar unit 6 with (The bus bar unit 6 is stored in the metal case 304 in a state where the bus bar unit 6 is connected to the power semiconductor modules 300U, 300V, and 300W in advance), and the power semiconductor modules 300U, 300V, and 300W are mounted in the plane direction in the metal case 304. It can be arranged at a predetermined position. Here, in the power semiconductor modules 300U, 300V, and 300W housed in a non-connected state, a wiring space for connection is required. In contrast, the power semiconductor modules 300U, 300V, and 300W are connected to each other. Since the distance can be minimized and the length of the bus bar in the longitudinal direction can be shortened, the effect of reducing the loss can be increased accordingly. In addition, the symmetry with each of the capacitor elements 500a described above is increased, and the reliability of the capacitor 500 is improved.

  By providing a thin portion 304A around the metal case 304 for each of the plurality of power semiconductor modules housed in the metal case 304, the thin portion 304A is deformed according to the thickness of the power semiconductor module, and the interval between the heat dissipation base portions 305 is increased. Therefore, the insulating layer 333 can be set to a minimum thickness necessary for insulation, and heat dissipation can be improved. On the other hand, since the flange 307 is not deformed when pressed by providing the thin portion 304A, it has high watertight reliability.

The power semiconductor modules 300U, 300V, and 300W are divided into a plurality of parts in the longitudinal direction. Compared to those that are integrated without being divided, the temperature rises and falls when sealed with an insulating mold resin (transfer mold method) 348 (see FIGS. 8 and 14) or when stored with the insulating layer 333. Thermal stress can be reduced. As a result, thermal deformation such as warpage can be minimized, and an increase in thermal resistance due to variation in the thickness of the insulating layer 333 and between the cooling fin 306 and the inner wall forming the refrigerant flow path 120 (see FIG. 13) of the flow path forming body 12. Reduction in heat transfer coefficient due to gap variation can be suppressed and reliability can be improved.

“Second Embodiment”
Next, a power converter according to a second embodiment of the present invention will be described with reference to FIG. 18 and FIG. 18 is a perspective view of a configuration in which the power semiconductor module unit 5, the capacitor unit 4, and the bus bar unit 6 are combined, and FIG. 19 is an exploded perspective view thereof.

  In the second embodiment, the power semiconductor module unit 5 and the AC bus bar 802 are the same as those in the first embodiment. A feature of the second embodiment is that the bus bar 501 including the positive electrode conductor plate 509 ′ and the negative electrode conductor plate 508 ′ is bent and extended toward the capacitor unit 4 so as to be close to the floor surface of the housing 10 in a stacked state. It is that you are.

  The plurality of capacitor elements 500a are arranged in parallel between the AC bus bar relay unit 803, and the positive electrode connection terminal 500p and the negative electrode connection terminal 500n of the capacitor element 500a are connected to the bus bar 501 in a direction perpendicular to the floor surface of the housing 10. ing. As a result, the bus bar 501 can dissipate heat through the wide floor surface of the housing 10. Further, the capacitor element 500a and the AC bus bar relay portion 803 can be indirectly radiated to the casing 10 via the bus bar 501 installed on the floor. Furthermore, by increasing the stacking facing area of the positive electrode conductor plate 509 ′ and the negative electrode conductor plate 508 ′ of the bus bar 501, it is possible to increase the inductance reduction effect as compared with the first embodiment.

“Third Embodiment”
Next, the power converter device which concerns on the 3rd Embodiment of this invention is demonstrated with reference to FIG. 20 and FIG. 20 is a perspective view of a configuration in which the power semiconductor module unit 5, the capacitor unit 4, and the bus bar unit 6 are combined, and FIG. 21 is an exploded perspective view thereof. In the third embodiment, the power semiconductor module unit 5 is the same as that of the first embodiment.

  A feature of the third embodiment is that a bus bar 501 including a positive electrode conductor plate 509 ′ and a negative electrode conductor plate 508 ′ is erected so as to face the flange 307 of the metal case 304 in a stacked state. In addition, the power semiconductor module unit 5 has a structure that is bent and extended so as to be along the flow path forming body 12 of the power semiconductor module unit 5 and the bottom surface of the capacitor element 500 and close to the floor surface of the housing 10. The plurality of capacitor elements 500 a are connected to the bus bar 501 in such a direction that the positive electrode connection terminal 500 p and the negative electrode connection terminal 500 n of the capacitor element are perpendicular to the floor surface of the housing 10.

  With the configuration described above, the bus bar 501 can dissipate heat through the flow path forming body 12 and the housing 10. Further, by disposing the capacitor element 500a adjacent to the vicinity of the flow path forming body 12, the capacitor element 500a can easily dissipate heat and indirectly dissipate heat to the housing 10 via the bus bar 501. Is also possible.

  Then, the flange 307 side (the various terminals of the power semiconductor module 300 are arranged on the flange 307 side) of the metal case 304 housing the power semiconductor module unit 5 is disposed in the vicinity of the side surface of the housing 10. The length of the AC bus bar 802 can be shortened (specifically, the AC bus bar relay units 803U, V, and W connected to the AC bus bar terminals 802U, V, and W can be shortened). Thereby, it is the effect which suppresses heat_generation | fever from the resistance loss of the alternating current bus bar 802 reducing. Furthermore, since the stacked opposing area of the positive electrode conductor plate 509 ′ and the negative electrode conductor plate 508 ′ of the bus bar 501 arranged on the bottom surface can be increased, the effect of low inductance is obtained.

“Fourth Embodiment”
Next, the power converter device which concerns on the 4th Embodiment of this invention is demonstrated with reference to FIG. 22 and FIG. 22 is a perspective view of a configuration in which the power semiconductor module unit 5, the capacitor unit 4, the bus bar unit 6, and the magnetic interference suppressing member are combined, and FIG. 23 is a top view thereof.

  The feature of the fourth embodiment is that a conductor or magnetic thin plate 555 is provided in addition to the positive conductor plate 509 ′ and the negative conductor plate 508 ′ of the bus bar 501 in comparison with the first embodiment. is there. Since this thin plate 555 functions as a magnetic shield, in addition to the first embodiment, a thin plate 555 for providing a magnetic shield is also provided in the second and third embodiments. May be.

  In the fourth embodiment, the thin plate 555 is provided between the signal terminal relay portion 340 provided in the bus bar unit 6 and the positive conductor plate 509 ′ or the negative conductor plate 508 ′. Further, the thin plate 555 may be connected to the housing 10 or the flow path forming body 12A or the metal case 304 electrically connected to the housing 10 (see also FIG. 5) by screws or the like. Thereby, magnetic interference between the bus bar 501 that handles high power and the signal terminal relay unit 340 that is a control signal terminal that handles low voltage can be suppressed, and malfunction can be prevented. In addition, the influence of this magnetic interference increases as the switching speed increases. By adopting this embodiment, since magnetic interference is suppressed, high-speed switching is possible, and the power converter has an effect of reducing loss.

“Fifth Embodiment”
Next, the power converter device which concerns on the 5th Embodiment of this invention is demonstrated with reference to FIG. 24 and FIG. FIG. 24 is a schematic perspective view showing the arrangement of the power semiconductor module unit, the capacitor module unit, the bus bar unit, and the cooling flow path forming passage in the power conversion device according to the fifth embodiment of the present invention. It is a disassembled perspective view which shows arrangement | positioning of the power semiconductor module unit in a power converter device which concerns on 5th Embodiment, a capacitor | condenser module unit, a bus-bar unit, and a flow-path formation body, and arrangement | positioning of the flow-path formation channel | path for cooling.

  A feature of the fifth embodiment is that a flow path is formed with respect to a configuration in which the power semiconductor module unit 5 is water-cooled using the flow path forming body 12 in the first embodiment shown in FIGS. In addition to the body 12, the bus bar unit 6 and the capacitor unit 4 are formed by forming a flow path 15 (flow path connected to the refrigerant inflow pipe 13, the refrigerant outflow pipe 14, and the flow path forming body 12) on the floor surface of the housing 10. Is configured to be water-cooled. With this configuration, the cooling performance on the floor surface of the housing 10 with respect to the bus bar unit 6 and the capacitor unit 4 can be improved, and heat transfer from the motor can be prevented by the cooling water when installed on the motor via the housing 10. It becomes possible to install the power converters close to each other. In addition, the motor can be cooled via the housing 10. Here, a flow path 15 is formed below the base 18 on which the units 5, 4, and 6 are placed, and the refrigerant inflow pipe 13 and the refrigerant are passed through the flow path 15 and the flow path in the flow path forming body 12. The refrigerant flows between the outflow pipes 14.

  Further, since the temperature of the cooling water rises by the power semiconductor module unit 5, the cooling performance for the capacitor unit is enhanced by setting the upstream side of the cooling water (refrigerant inflow pipe 13) to the capacitor unit 4 side.

  As described above, each embodiment of the present invention may be used alone or in combination. This is because the effects of the respective embodiments can be achieved independently or synergistically. In addition, the present invention is not limited to the configurations of the above-described embodiments as long as the technical features of the present invention are not impaired.

3: upper cover, 4: capacitor unit, 5: power semiconductor module unit, 6: bus bar unit, 10: housing (metal case), 12, 12A: flow path forming body, 13: refrigerant inflow pipe, 14: refrigerant Outflow piping, 15: flow path, 18: base, 19: insulating base (base), 20: circuit board, 21: signal connector, 120: refrigerant flow path, 120A: flow path forming body opening, 136: battery, 138: DC connectors 188: AC connector, 140: inverter circuit, 150: series circuits, 156 and 166: diode, 157: DC positive terminal, 158: DC negative terminal, 159: AC terminal, 172: control circuit, 174 : Driver circuit, 180: current sensor module, 188: AC connector,
200: power converter, 300 U, 300 V, 300 W: power semiconductor module, 304: metals case made (storage case), 304A: thin portion, 304B, 304C: thick portion, 305: radiator base unit, 306: cooling fin , 307: flange, 315,318,319,320: conductors plate, 325L, 325U: signal terminals, 328, 330: IGBT, 333: insulating layer, 340: signal terminal repeater unit, 348: insulating molding resin, 351 : Insulating sealing resin,
500: capacitor, 500a: capacitor element, 500p: a positive electrode connection terminal, 500n: negative connection terminal, 501: bus bars, 504: negative electrode side capacitor terminal, 506: positive electrode side capacitor terminal, 508: negative electrode side power supply terminal, 508a, 508b: negative electrode terminal relay portion, 508 ′: negative electrode side bus bar (negative electrode conductor plate), 509: positive electrode side power supply terminal, 509a, 509b: positive electrode terminal relay portion, 509 ′: positive electrode side bus bar (positive electrode conductor plate), 550: insulation Resin, 555: magnetic interference suppressing member,
800: AC bus bar holder, 802: AC bus bar, 802U, 802V, 802W: AC bus bar terminal, 803U, 803V, 803W: AC bus bar relay unit, 804U, 804V, 804W: AC terminal relay unit,
EGN: Engine, MG1: the motor generator, TSM: power distribution mechanism, TM: Transmission, DEF: Differential gearing

Claims (10)

A plurality of capacitor elements for smoothing the DC voltage, prior SL and a plurality of the plurality of power semiconductor modules one lifting an inverter circuit for converting direct current to alternating current of a plurality of phases from the capacitor element, and prior Symbol plurality of capacitor elements includes a bus bar for electrically connecting the plurality of power semiconductor module, and a DC positive and negative terminals provided projected from each of the previous SL plurality of power semiconductor modules,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar, the plurality of power semiconductor modules are disposed in the space between the same column arranged first region and arranged second regions of the plurality of capacitor elements Rutotomoni, the plurality of power semiconductor It is formed along the same column arrangement direction of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the same column arrangement direction of the module ,
The storage case has a heat dissipating part facing each of the plurality of power semiconductor modules, and has a thin part that connects the heat dissipating parts,
The heat radiating portion, the plurality of power semiconductor modules that is in contact with the heat radiating surface features to power conversion apparatus of the deformation of the thin portion. The power conversion device according to claim 1,
A housing that covers the plurality of power semiconductor modules housed in the housing case, the plurality of capacitor elements, and the bus bar;
The bus bar are both to form a bent portion that is bent toward the space between the space and the housing and the plurality of capacitor elements between the first region and the second region, the housing a power conversion apparatus characterized by forming the extending portion that extends in the space between said plurality of capacitor elements. The power conversion device according to claim 1 ,
The storage case has a partition that separates the storage spaces of the plurality of power semiconductor modules ,
The power conversion device according to claim 1, wherein the partition wall is formed with a thick portion thicker than the thin portion . A plurality of capacitor elements for smoothing a DC voltage; a plurality of power semiconductor modules having an inverter circuit for converting a DC current from the plurality of capacitor elements into a plurality of phases of AC current; the plurality of capacitor elements; and the plurality of the plurality of capacitor elements. A bus bar that electrically connects the power semiconductor module, and a direct current positive electrode and a negative electrode terminal provided so as to protrude from each of the plurality of power semiconductor modules,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar is arranged in a space between a first region of the plurality of power semiconductor modules arranged in the same row and a second region of the plurality of capacitor elements, and the plurality of power semiconductors It is formed along the same column arrangement direction of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the same column arrangement direction of the module,
A power conversion device , wherein a metal shield plate is provided between a control signal terminal for applying a control signal to the plurality of power semiconductor modules and the bus bar . A plurality of capacitor elements for smoothing a DC voltage; a plurality of power semiconductor modules having an inverter circuit for converting a DC current from the plurality of capacitor elements into a plurality of phases of AC current; the plurality of capacitor elements; and the plurality of the plurality of capacitor elements. A bus bar that electrically connects the power semiconductor module, and a direct current positive electrode and a negative electrode terminal provided so as to protrude from each of the plurality of power semiconductor modules,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar is arranged in a space between a first region of the plurality of power semiconductor modules arranged in the same row and a second region of the plurality of capacitor elements, and the plurality of power semiconductors It is formed along the same column arrangement direction of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the same column arrangement direction of the module,
An AC bus bar that outputs the converted AC current of the plurality of phases;
The AC bus bar has a bus bar relay conductor plate connected to an AC terminal protruding from the plurality of power semiconductor modules,
The power conversion device, wherein the bus bar relay conductor plate is disposed between the plurality of capacitor elements arranged side by side . The power conversion device according to claim 5 , wherein
The AC bus bar is formed with a through hole that connects the space between the first region and the second region,
The power conversion device, wherein the bus bar relay conductor plate is connected to an AC bus bar terminal that is an output end extending from the AC terminal through the through hole to the space . The power conversion device according to claim 5 or 6,
A power conversion device comprising an insulating base for holding the plurality of capacitor elements and the AC bus bar . A plurality of capacitor elements for smoothing a DC voltage; a plurality of power semiconductor modules having an inverter circuit for converting a DC current from the plurality of capacitor elements into a plurality of phases of AC current; the plurality of capacitor elements; and the plurality of the plurality of capacitor elements. A bus bar that electrically connects the power semiconductor module, and a direct current positive electrode and a negative electrode terminal provided so as to protrude from each of the plurality of power semiconductor modules,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar is arranged in a space between a first region of the plurality of power semiconductor modules arranged in the same row and a second region of the plurality of capacitor elements, and the plurality of power semiconductors It is formed along the same column arrangement direction of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the same column arrangement direction of the module,
A flow path forming body for flowing a coolant flow path outside the storage case storing the plurality of power semiconductor modules is formed so as to cover the storage case;
A power conversion device, wherein a refrigerant inflow pipe and a refrigerant outflow pipe are connected to the flow path forming body . A plurality of capacitor elements for smoothing a DC voltage; a plurality of power semiconductor modules having an inverter circuit for converting a DC current from the plurality of capacitor elements into a plurality of phases of AC current; the plurality of capacitor elements; and the plurality of the plurality of capacitor elements. A bus bar that electrically connects the power semiconductor module, and a direct current positive electrode and a negative electrode terminal provided so as to protrude from each of the plurality of power semiconductor modules,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar is arranged in a space between a first region of the plurality of power semiconductor modules arranged in the same row and a second region of the plurality of capacitor elements, and the plurality of power semiconductors It is formed along the same column arrangement direction of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the same column arrangement direction of the module,
A housing that covers the plurality of power semiconductor modules housed in the housing case, the plurality of capacitor elements, and the bus bar;
A flow path forming body for flowing a coolant flow path outside the storage case storing the plurality of power semiconductor modules is formed so as to cover the storage case;
The refrigerant from the refrigerant inflow pipe provided in the casing flows out from the refrigerant outflow pipe provided in the casing through the flow path provided in the lower surface of the casing and the flow path in the flow path forming body. The power converter characterized by the above-mentioned . A plurality of capacitor elements for smoothing a DC voltage; a plurality of power semiconductor modules having an inverter circuit for converting a DC current from the plurality of capacitor elements into a plurality of phases of AC current; the plurality of capacitor elements; and the plurality of the plurality of capacitor elements. A bus bar that electrically connects the power semiconductor module, and a direct current positive electrode and a negative electrode terminal provided so as to protrude from each of the plurality of power semiconductor modules ,
The plurality of power semiconductor modules are housed in a housing case and arranged adjacent to each other on the same plane and in the same row,
The plurality of capacitor elements are arranged side by side along a direction parallel to the arrangement direction of the same row of the plurality of power semiconductor modules stored in the storage case,
The bus bar is disposed on one side surface on the same row of the plurality of power semiconductor modules and on the one side surface side opposite to the arrangement side of the plurality of capacitor elements. Standing along the direction of the one side surface of the plurality of power semiconductor modules so as to face the DC positive electrode and the negative electrode terminal respectively provided in the direction of the one side surface of the power semiconductor module,
Further, the bus bar forms a bent portion that bends from the one side surface side to the other side surface side of the plurality of power semiconductor modules, and the plurality of power semiconductor modules, the plurality of capacitor elements, A power conversion device , characterized in that an extension portion extending to the lower surface side of the battery is formed .