JP6117361B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device, and more particularly to a power conversion device including a cooling channel for cooling a power semiconductor module.

  There is known a power conversion device in which a plurality of power semiconductor modules each including a power semiconductor element are accommodated in a device case having a cooling flow path. Such a power converter is mounted on an electric vehicle such as an electric vehicle or a hybrid vehicle.

Each power semiconductor module is disposed in the cooling channel so as to be separated from the inner surface of the device case. In addition, the power semiconductor module is disposed so as to face and separate the heat sink. The cooling flow path is formed to communicate between the inner surface in the device case and the side surface of each power semiconductor module and between the power semiconductor modules. A cooling medium such as cooling water flows into the cooling flow path from the inlet of the device case, cools the power semiconductor module, and is discharged from the outlet of the device case.
The device case in which the cooling channel is formed is generally formed by casting or resin molding, and the inlet and the outlet of the cooling channel are usually provided on the same side surface of the device case.

  In such a power conversion device, in order to suppress fluctuations in the flow rate of the cooling medium due to the flow path resistance of the cooling flow path, the cross-sectional area of the cooling flow path is set to the inlet and outlet sides, and the innermost part of the cooling flow path. There is a structure that is different on the part side. In this structure, since the cross-sectional areas of the cooling flow paths are different, it is described that the flow rate of the cooling medium for cooling each power semiconductor module can be adjusted, and the power semiconductor element can be efficiently cooled. (For example, refer to Patent Document 1).

JP 2012-16073 A

  In the power conversion device described in Patent Literature 1, no consideration is given to the loss of cooling efficiency due to the draft angle of the inner surface of the device case formed by casting or resin molding.

  The power conversion device of the present invention includes a first power semiconductor module in which a heat dissipation fin is provided on at least one surface of a module case in which a power semiconductor element is embedded, and at least one surface of a module case in which the power semiconductor element is embedded. A second power semiconductor module provided with heat radiation fins and an insertion slot into which the first power semiconductor module is inserted, and at least a region of the module case provided with the heat radiation fins of the first power semiconductor module is inserted. A first flow path space and a second flow path space that has an insertion port into which the second power semiconductor module is inserted and into which a module case region provided with at least a heat radiation fin of the second power semiconductor module is inserted. A flow path forming body formed in communication with a cooling flow path through which a cooling medium flows. The flow path forming body is formed by casting or resin molding, and the flow path forming body is at least one of an inner wall facing the heat radiating fin in the first flow path space and an inner wall facing the heat radiating fin in the second flow path space. The draft formed from the bottom surface side to the insertion port side is cut out.

  According to the present invention, since at least one of the cooling jackets has the draft angle of the inner wall surface in casting or resin molding removed, the cooling effect flowing between the power semiconductor module and the inner wall surface of the flow path forming body is small. The flow of the cooling medium, so-called bypass flow is suppressed, and the cooling efficiency can be improved correspondingly.

It is a control block diagram of the hybrid vehicle carrying the power converter device using the power semiconductor module by one Embodiment of this invention. It is a figure which shows the circuit structure of the power converter device by this embodiment. It is a perspective view of the power semiconductor module by this embodiment. FIG. 4 is a cross-sectional view of the power semiconductor module illustrated in FIG. 3. It is an internal perspective view of the power semiconductor module by this embodiment. FIG. 6 is a cross-sectional view of the power semiconductor module illustrated in FIG. 5. It is an exploded view of the power semiconductor module by this embodiment. It is a circuit diagram of the power semiconductor module by this embodiment. It is a perspective view of the base member from the surface side by this embodiment. FIG. 10 is a perspective view from the bottom side of the base member illustrated in FIG. 9. It is a figure for demonstrating the process of attaching a power semiconductor module to the cooling jacket which has a draft. It is a figure for demonstrating the process following FIG. It is sectional drawing for demonstrating the effect | action of a bypass flow. It is sectional drawing of the state by which the par semiconductor module is arrange | positioned at the cooling jacket from which the draft was cut off. It is a figure for demonstrating the method of cutting the draft of the inner wall of a cooling jacket, (a) is sectional drawing of the cooling jacket which has draft, (b), (c) is the cooling by which the draft was cut off It is sectional drawing which shows the formation method of a jacket. It is a figure which shows one Embodiment of the selection method of arrangement | positioning of the draft cutting jacket and the cooling jacket with draft. It is a perspective view of the power converter device corresponding to arrangement | positioning of the cooling jacket shown in FIG. It is a figure which concerns on Embodiment 2 of this invention and shows another selection method of arrangement | positioning of a draft cut | removal jacket and a draft jacket with a draft. FIG. 19 is a perspective view of a base member corresponding to the arrangement of the cooling jacket illustrated in FIG. 18. It is a figure which concerns on Embodiment 3 of this invention, and relates to Embodiment 2 of this invention, and shows the further another selection method of arrangement | positioning of a draft cut | disconnection cutting jacket and a cooling jacket with draft. FIG. 21 is a perspective view of a base member corresponding to the arrangement of the cooling jacket illustrated in FIG. 20. FIG. 10 is a perspective view of a base member according to Embodiment 4 of the present invention.

--Embodiment 1--
[Overall circuit of hybrid vehicle]
An embodiment of a double-sided cooling type power semiconductor module and a power converter using the same will be described in detail below with reference to the drawings. The power semiconductor module and the power conversion device according to the present invention can be applied to a hybrid vehicle or a pure electric vehicle. Hereinafter, as a representative example, an embodiment in which the power semiconductor module and the power conversion device according to the present invention are applied to a hybrid vehicle will be described.

  In the following embodiments, an in-vehicle power conversion device for a rotating electrical machine drive system mounted on an automobile, particularly a vehicle drive inverter device used in a vehicle drive electrical system and having a very severe mounting environment or operational environment. An application example will be described. A vehicle drive inverter device is provided in a vehicle drive electrical system as a control device for controlling the drive of a vehicle drive motor, and a DC power supplied from an onboard battery or an onboard power generator constituting an onboard power source is a predetermined AC power. Then, the AC power obtained is supplied to the vehicle drive motor to control the drive of the vehicle drive motor. Further, since the vehicle drive motor also has a function as a generator, the vehicle drive inverter device also has a function of converting AC power generated by the vehicle drive motor into DC power according to the operation mode. ing. The converted DC power is supplied to the on-vehicle battery.

  In addition, although the structure of the following embodiment is optimal as a power converter device for driving vehicles, such as a motor vehicle and a truck, it is applicable also to power converter devices other than this. For example, power converters used in trains, ships, airplanes, etc., industrial power converters used as control devices for electric motors that drive factory equipment, home solar power generation systems, and home appliances The present invention can also be applied to a household power conversion device that is used in a control device for a driving motor.

  FIG. 1 shows a control block of a hybrid vehicle equipped with a power conversion device using a power semiconductor module according to an embodiment of the present invention. A hybrid vehicle (hereinafter referred to as HEV) 110 includes two vehicle drive systems. One of them is an engine drive system that uses an engine 120 that is an internal combustion engine as a power source. The other is a rotating electrical machine drive system using motor generators 192 and 194 as a power source. The rotating electrical machine drive system includes motor generators 192 and 194 as drive sources. As the motor generators 192 and 194, synchronous machines or induction machines are used. The motor generators 192 and 194 operate as motors or generators under control. Therefore, in this specification, these are described as a motor generator. These are typical examples of use, and the motor generators 192 and 194 may be used only as a motor or only as a generator. Motor generators 192 and 194 are controlled by inverter circuits 140 and 142 described below. In this control, the motor generators 192 and 194 operate as a motor or a generator.

  The present invention is naturally applicable to the HEV shown in FIG. 1, but can also be applied to a pure electric vehicle that does not use an engine drive system. Both the HEV rotating electrical machine drive system and the drive system of a pure electric vehicle have the same basic operation and configuration in the parts related to the present invention. Therefore, in order to avoid complexity, the following description will be made using an example of HEV as a representative.

  A front wheel axle 114 provided with a pair of front wheels 112 is rotatably supported at the front portion of the vehicle body. In the present embodiment, a so-called front wheel drive system is adopted in which the main wheel driven by power is the front wheel 112 and the driven wheel to be rotated is the rear wheel, but the reverse, that is, the rear wheel drive system is adopted. It doesn't matter.

  The front wheel axle 114 is provided with a differential gear (hereinafter referred to as DEF) 116. The front wheel axle 114 is mechanically connected to the output side of the DEF 116. The output shaft of the transmission 118 is mechanically connected to the input side of the DEF 116. The DEF 116 receives the torque shifted by the transmission 118 and distributes it to the left and right front wheel axles 114. The output side of the motor generator 192 is mechanically connected to the input side of the transmission 118. The output side of the engine 120 or the output side of the motor generator 194 is mechanically connected to the input side of the motor generator 192 via the power distribution mechanism 122. Motor generators 192 and 194 and power distribution mechanism 122 are housed inside the casing of transmission 118.

  Motor generators 192 and 194 may be induction machines, but in this embodiment, a synchronous machine having a permanent magnet on the rotor, which is more excellent in improving the efficiency, is used. The AC power supplied to the stator windings of the stator of the induction machine and the synchronous machine is controlled by the inverter circuits 140 and 142, so that the motor generators 192 and 194 operate as motors or generators and their characteristics. Be controlled. That is, the inverter circuits 140 and 142 constitute a power running and regenerative inverter. A battery 136 is connected to the inverter circuits 140 and 142 via the boost converter 144, and power can be exchanged between the battery 136 and the inverter circuits 140 and 142.

  In the present embodiment, HEV 110 is provided with a first motor generator unit composed of motor generator 192 and inverter circuit 140 and a second motor generator unit composed of motor generator 194 and inverter circuit 142 according to the operating state. And use them properly. That is, in the situation where the vehicle is driven by the power from the engine 120, when assisting the driving torque of the vehicle, the second motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the power generation The first motor generator unit is operated as an electric unit by the electric power obtained by the above. Further, when assisting the vehicle speed in the same situation, the first motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  In the present embodiment, the vehicle can be driven only by the power of motor generator 192 by operating the first motor generator unit as an electric unit by the electric power of battery 136. Furthermore, in this embodiment, the battery 136 can be charged by operating the first motor generator unit or the second motor generator unit as a power generation unit by the power of the engine 120 or the power from the wheels to generate power.

  The battery 136 is also used as a power source for driving an auxiliary motor 195. The auxiliary motor 195 includes, for example, a motor that drives a compressor of an air conditioner or a motor that drives a control hydraulic pump. The DC power supplied from the battery 136 is converted into AC power by the auxiliary converter 43 and supplied to the motor 195. The auxiliary converter 43 has the same function as the inverter circuits 140 and 142, and controls the phase, frequency, and power of the alternating current supplied to the motor 195. For example, the motor 195 generates torque by supplying AC power having a leading phase with respect to the rotation of the rotor of the motor 195. On the other hand, by generating the delayed phase AC power, the motor 195 acts as a generator, and the motor 195 is operated in a regenerative braking state. The control function of the auxiliary converter 43 is the same as the control function of the inverter circuits 140 and 142. Since the capacity of the motor 195 is smaller than the capacity of the motor generators 192 and 194, the maximum conversion power of the auxiliary converter 43 is smaller than the inverter circuits 140 and 142, but the circuit configuration of the auxiliary converter 43 is fundamental. The circuit configurations of the inverter circuits 140 and 142 are the same.

  In the embodiment of FIG. 1, the constant voltage power supply is omitted. Each control circuit and various sensors operate with electric power from a constant voltage power source (not shown). This constant voltage power supply is, for example, a 14 volt system power supply, and is equipped with a 14 volt system such as a lead battery, and in some cases a 24 volt system battery, and either the positive electrode or the negative electrode is connected to the vehicle body. Used as a power supply conductor for power supplies.

  The inverter circuits 140 and 142, the auxiliary converter 43, the boost converter 144, and the capacitor module 500 are in an electrically intimate relationship. Furthermore, there is a common point that measures against heat generation are necessary. It is also desired to make the volume of the device as small as possible. From these points, the power conversion device 200A described in detail below includes the inverter circuits 140 and 142, the auxiliary converter 43, the boost converter 144, and the capacitor module 500, and the casing 12 of the power conversion device 200A. (See FIG. 2). This configuration can reduce the size. Furthermore, there is an effect that the number of harnesses can be reduced or radiation noise can be reduced. This effect leads to downsizing or improved reliability. It also leads to improved productivity. Further, the connection circuit between the boost converter 144, the capacitor module 500, the inverter circuits 140 and 142, and the auxiliary converter 43 can be shortened, or the structure described below can be realized, and the inductance can be reduced, resulting in spikes. The voltage can be reduced. Furthermore, the structure described below can reduce heat generation and improve heat dissipation efficiency. The power conversion device 200 </ b> A is connected to the battery 136 via the DC connector 138.

[Circuit configuration of power converter]
The circuit configuration of the power conversion device 200A according to the present embodiment will be described with reference to FIG. As shown in FIG. 1, the power conversion device 200 </ b> A includes inverter circuits 140 and 142, an auxiliary converter 43, a boost converter 144, and a capacitor module 500. The auxiliary machine converter 43 is an inverter device that controls an auxiliary machine motor 195 for driving auxiliary machines included in the HEV 110.

  Each of the inverter circuits 140 and 142 includes a plurality of power semiconductor modules 300 each having a double-sided cooling structure, three in this embodiment. These power semiconductor modules 300 are connected in parallel to form a three-phase bridge circuit. When the current capacity is large, a plurality of power semiconductor modules 300 may be further connected in parallel. By performing parallel connection of the power semiconductor modules 300 corresponding to each phase of the three-phase inverter circuit, it is possible to cope with an increase in current capacity. Further, as described below, semiconductor elements built in the power semiconductor module 300 may be connected in parallel. Thereby, it is possible to cope with an increase in power without connecting a plurality of power semiconductor modules 300 in parallel.

  As will be described later, each power semiconductor module 300 accommodates the power semiconductor element and its connection wiring in a module case 304 shown in FIGS. In the present embodiment, the module case 304 includes a can-like heat radiating metal base having an opening in which an opening is formed. The module case 304 has a pair of opposed heat dissipation bases 307. In this embodiment, the heat radiating base 307 is formed on the two widest surfaces among the five surfaces other than the surface having the opening of the module case 304. Outer walls are formed on the remaining surfaces of the same material, without joints, so as to connect the two heat dissipation bases 307 in succession. An opening is formed on one surface of the can-shaped module case 304 having a rectangular parallelepiped shape. From this opening, the power semiconductor element is inserted and held in the module case 304.

  The inverter circuits 140 and 142 and the boost converter 144 are driven and controlled by the driver circuit 174, respectively. The driver circuit 174 is controlled by the control circuit 172. The control circuit 172 generates a switching signal for controlling the switching timing of the power semiconductor element.

  The inverter circuit 140 and the inverter circuit 142 have the same basic circuit configuration, and basically have the same control method and operation. Therefore, as an example, the inverter circuit 140 will be described as an example. The inverter circuit 140 includes a three-phase bridge circuit as a basic configuration. Specifically, it has a U-phase power semiconductor module 300 (indicated by reference numeral U1), a V-phase power semiconductor module 300 (indicated by reference numeral V1), and a W-phase power semiconductor module 300 (indicated by reference numeral W1). Yes. Similarly for the inverter circuit 142, the power semiconductor modules 300 of the U-phase, V-phase, and W-phase are denoted by reference numerals U2, V2, and W2, respectively. The power semiconductor module 300 of each phase is configured by an upper and lower arm series circuit in which an upper arm circuit and a lower arm circuit are connected in series. The power semiconductor module 300 of each phase includes a DC positive terminal 315B connected to the upper arm circuit, a DC negative terminal 319B connected to the lower arm circuit, and an AC connected to a connection portion between the upper arm circuit and the lower arm circuit. Terminal 321.

  In the power semiconductor module 300 of each phase, AC power is generated at the connection between the upper arm circuit and the lower arm circuit. The AC terminal 321 of each phase power semiconductor module 300 is connected to the AC output connector 188. In the power converter 200A, AC power generated in the power semiconductor module 300 of each phase of the inverter circuits 140 and 142 is supplied to the stator windings of the motor generator 192 or 194 via the AC output connector 188.

  Here, the power semiconductor modules 300 of the respective phases included in the inverter circuits 140 and 142 have basically the same structure, and their operations are basically the same. Therefore, the U-phase power semiconductor module 300 of the inverter circuit 140, that is, the power semiconductor module U1 will be described below as a representative of these.

  In the power semiconductor module U1, the upper arm circuit includes an upper arm IGBT (insulated gate bipolar transistor) 155 and an upper arm diode 156 as power semiconductor elements for switching. The lower arm circuit includes a lower arm IGBT 157 and a lower arm diode 158 as power semiconductor elements for switching. The DC positive terminal 315B connected to the upper arm circuit and the DC negative terminal 319B connected to the lower arm circuit are connected to the capacitor module 500, respectively.

  As described above, the V-phase and W-phase power semiconductor modules V1 and W1 of the inverter circuit 140 have substantially the same circuit configuration as that of the power semiconductor module U1. The power semiconductor modules U2, V2, and W2 of each phase of the inverter circuit 142 have the same configuration as that of the inverter circuit 140. Therefore, illustrations of the components other than the power semiconductor module U1 are omitted in FIG.

  The upper arm IGBT 155 and the lower arm IGBT 157 perform a switching operation in response to the drive signal output from the driver circuit 174, and convert DC power supplied from the battery 136 into three-phase AC power. The converted electric power is supplied to the stator winding of the motor generator 192. The auxiliary converter 43 has the same configuration as that of the inverter circuit 142, and the description thereof is omitted here.

  In the present embodiment, an example is shown in which an upper arm IGBT 155 and a lower arm IGBT 157 are used as power semiconductor elements for switching. The upper arm IGBT 155 and the lower arm IGBT 157 include a collector electrode, an emitter electrode (signal emitter electrode terminal), and a gate electrode (gate electrode terminal), as will be described in detail later. An upper arm diode 156 and a lower arm diode 158 are electrically connected between the collector electrode and the emitter electrode of the upper arm IGBT 155 and the lower arm IGBT 157 as illustrated. Each of the upper arm diode 156 and the lower arm diode 158 includes two electrodes, that is, a cathode electrode and an anode electrode. The cathode electrode is the collector electrode of the upper arm IGBT 155 or the lower arm IGBT 157 and the anode electrode is the upper arm IGBT 155 or the lower arm IGBT 157 so that the direction from the emitter electrode to the collector electrode of the upper arm IGBT 155 or lower arm IGBT 157 is the forward direction. Each is electrically connected to the emitter electrode.

  The control circuit 172 generates a timing signal for controlling the switching timing of the upper arm IGBT 155 and the lower arm IGBT 157. Based on the timing signal output from the control circuit 172, the driver circuit 174 generates a drive signal for switching the upper arm IGBT 155 and the lower arm IGBT 157.

  The control circuit 172 includes a microcomputer (hereinafter referred to as a “microcomputer”) for calculating the switching timing of the upper arm IGBT 155 and the lower arm IGBT 157. The microcomputer inputs the target torque value required for the motor generator 192, the current value supplied from the upper and lower arm series circuit to the stator winding of the motor generator 192, the magnetic pole position of the rotor of the motor generator 192, and the like. Input as information. The target torque value is based on a command signal output from a host control device (not shown). The current value is detected based on the detection signal output from the current sensor 180. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 192. In the present embodiment, the case of detecting the current values of three phases will be described as an example, but the current values of two phases may be detected.

  The microcomputer in the control circuit 172 calculates the d-axis and q-axis current command values of the motor generator 192 based on the target torque value, and the calculated d-axis and q-axis current command values and the detected d Based on the difference between the current value of the axis and the q axis, the voltage command value of the d axis and the q axis is calculated. Further, the microcomputer converts the calculated d-axis and q-axis voltage command values into U-phase, V-phase, and W-phase voltage command values based on the detected magnetic pole positions. The microcomputer then compares the fundamental wave (sine wave) based on the voltage command values of the U phase, V phase, and W phase with the carrier wave (triangular wave), and PWM (pulse width modulation), which is a pulsed modulated wave A signal is generated and output to the driver circuit 174 as the timing signal described above.

  When driving the lower arm, the driver circuit 174 amplifies the timing signal from the control circuit 172, that is, the PWM signal, and outputs the amplified signal as a drive signal (gate signal) to the gate electrode of the corresponding lower arm IGBT 157. On the other hand, when driving the upper arm, the driver circuit 174 amplifies the PWM signal after shifting the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, and drives it (drive signal (gate signal)). Are output to the gate electrodes of the corresponding upper arm IGBTs 155, respectively. As a result, the upper arm IGBT 155 and the lower arm IGBT 157 perform a switching operation based on the input drive signal (gate signal).

  In addition, the driver circuit 174 and the control circuit 172 perform abnormality detection (overcurrent, overvoltage, overtemperature, etc.) to protect the upper and lower arm series circuit. Therefore, various sensing information is input to the driver circuit 174 and the control circuit 172. For example, information on the current flowing through the emitter electrode is input from the signal emitter electrode terminal of the upper arm IGBT 155 or the lower arm IGBT 157 to the driver circuit 174. As a result, the driver circuit 174 detects an overcurrent, and when an overcurrent is detected, the switching operation of the corresponding upper arm IGBT 155 or lower arm IGBT 157 is stopped to protect the IGBT from the overcurrent. Further, temperature information from a temperature sensor (not shown) and voltage information on the DC positive electrode side are input from the upper and lower arm series circuit to the control circuit 172. The control circuit 172 performs over temperature detection and over voltage detection based on the information, and when an over temperature or over voltage is detected, the switching operation of all the upper arm IGBT 155 and the lower arm IGBT 157 is stopped, and the upper and lower arms Protects the series circuit from over temperature and over voltage.

  In each phase of the inverter circuit 140, the conduction and cutoff operations of the upper arm IGBT 155 and the lower arm IGBT 157 are switched in a certain order. The current generated in the stator winding of the motor generator 192 at this switching flows through a circuit including the diodes 156 and 158. In the power conversion device 200A of the present embodiment, one upper and lower arm series circuit is provided for each phase of the inverter circuit 140. As described above, the output of each phase of the three-phase AC output to the motor generator 192 is provided. The generated circuit may be a power conversion device having a circuit configuration in which two upper and lower arm series circuits are connected in parallel to each phase.

  The DC positive terminal 315 </ b> B and the DC negative terminal 319 </ b> B of each power semiconductor module 300 are respectively connected to the capacitor module 500 through the multilayer wiring board 700. The laminated wiring board 700 is a wiring board having a three-layer structure in which an insulating sheet (not shown) is sandwiched between wiring layers 702 and 704 made of a conductive plate material wide in the arrangement direction of the power semiconductor modules 300. . The wiring layers 702 and 704 of the multilayer wiring board 700 are connected to wiring layers 507 and 505 included in the multilayer wiring board 501 provided in the capacitor module 500, respectively. Similarly to the wiring layers 702 and 704, the wiring layers 507 and 505 are made of a conductive plate material that is wide in the arrangement direction of the power semiconductor modules 300, and constitute a three-layer laminated wiring board 501 sandwiching an insulating sheet. .

  A plurality of capacitor cells 514 are connected in parallel to the capacitor module 500. The positive electrode side of the capacitor cell 514 is connected to the wiring layer 507, and the negative electrode side of the capacitor cell 514 is connected to the wiring layer 505. Capacitor module 500 forms a smoothing circuit for suppressing fluctuations in DC voltage caused by switching operations of upper arm IGBT 155 and lower arm IGBT 157.

  The multilayer wiring board 501 of the capacitor module 500 is connected to the input multilayer wiring board 230 connected to the DC connector 138 of the power converter 200A. An auxiliary machine converter 43 is also connected to the input laminated wiring board 230. A noise filter (not shown) is provided between the input laminated wiring board 230 and the laminated wiring board 501.

  In the configuration of the power conversion device 200A shown in FIG. 2, the capacitor module 500 includes a terminal (reference numeral omitted) connected to the DC connector 138 to receive DC power from the battery 136 via the boost converter 144 that is a DC power supply. Terminals connected to the inverter circuit 140 or the inverter circuit 142 are separately provided. Therefore, adverse effects of noise generated by the inverter circuit 140 or the inverter circuit 142 on the battery 136 can be reduced.

  Further, since the multilayer wiring board 700 is used for the connection between the capacitor module 500 and each power semiconductor module 300 as described above, the inductance with respect to the current flowing through the upper and lower arm series circuits of each power semiconductor module 300 can be reduced. For this reason, it is possible to reduce the voltage that jumps with the sudden change of the current.

  In the above embodiment, one of the first motor generator unit and the second motor generator unit can be used for a motor, and the other can be used for a generator or for regeneration. For example, when the first motor generator unit is used for a motor and the second motor generator unit is used for a generator, the inverter circuit 140 is a power running inverter that converts DC power into AC power, and the motor generator 192 is a motor. . In this case, the motor generator 194 may be removed, and the inverter circuit 142 may be used as a generator or regenerative inverter that converts AC power into DC power to assist the inverter circuit 140 or charge the battery 136.

[Power semiconductor module]
A detailed configuration of the power semiconductor module 300 used in the inverter circuit 140 and the inverter circuit 142 will be described. FIG. 3 is a perspective view of the power semiconductor module according to the present embodiment, and FIG. 4 is a cross-sectional view of the power semiconductor module illustrated in FIG. FIG. 5 is an internal perspective view of the power semiconductor module according to the present embodiment.
6 shows the power semiconductor according to the present embodiment in which the module case 304, the insulating sheet 333, the first sealing resin 350, and the second sealing resin 351 are removed from the cross-sectional view of the power semiconductor module 300 shown in FIG. 3 is an internal cross-sectional view of a module 300. FIG. 6 is a cross-sectional view of the power semiconductor module 300 corresponding to FIG. FIG. 7 is an exploded view of the power semiconductor module 300 to help understand the structure of FIG. FIG. 8 is a circuit diagram of the power semiconductor module 300.

  As shown in FIGS. 5 and 7, the upper arm IGBT 155 and the upper arm diode 156 among the power semiconductor elements constituting the upper and lower arm series circuit are sandwiched between the DC positive electrode conductor plate 315 and the second AC conductor plate 318 from both sides. It is fixed to these conductor plates in a state. The lower arm IGBT 157 and the lower arm diode 158 are fixed to these conductor plates while being sandwiched between the DC negative electrode conductor plate 319 and the first AC conductor plate 316 from both sides. Furthermore, the upper arm IGBT 155 and the lower arm IGBT 157 are connected to signal terminals 324U and 324L that are insert-molded in the auxiliary mold body 600, respectively. Each of these power semiconductor elements, each conductor plate, and each signal terminal is integrally sealed with a first sealing resin 350 that is a sealing material, exposing the heat transfer surface 323 of each conductor plate. A module primary sealing body 300m (see FIG. 4 and the like) is formed. After the module primary sealing body 300m is thermocompression-bonded with the insulating sheet 333 is inserted into the module case 304, the insulating sheet 333 and the inner surface of the module case 304 as a can-type cooler are thermocompression bonded, The power semiconductor module 300 is assembled by filling the gap remaining inside the module case 304 with the second sealing resin 351.

  As described above, productivity is improved by using the insulating sheet 333 to fix each conductor plate supporting the power semiconductor element to the inside of the module case 304. Further, since the heat generated by the power semiconductor element can be efficiently transmitted to the heat radiation fin 305 formed on the heat radiation base 307, the cooling effect of the power semiconductor element is improved. Furthermore, since generation of thermal stress due to temperature change or the like can be suppressed, it is suitable for use in an inverter for a vehicle having a rapid temperature change.

  5 and 7, in the power semiconductor module 300, two power semiconductor elements of the upper arm IGBT 155, the upper arm diode 156, the lower arm IGBT 157, and the lower arm diode 158 are connected in parallel. Is illustrated. However, the configuration of the power semiconductor module according to the present invention is not limited to this. For example, the power semiconductor elements may be connected one by one without being connected in parallel, or three or more may be connected in parallel. The following embodiment will be described as including all of these configurations.

  The power semiconductor module 300 is provided with a direct current positive electrode wiring 315A and a direct current negative electrode wiring 319A as a direct current bus bar for connecting to the capacitor module 500, and a direct current positive electrode terminal 315B and a direct current negative electrode terminal 319B are formed at the tip portions thereof. Has been. An AC wiring 320 is provided as an AC bus bar for supplying AC power to the motor generator 192 or 194, and an AC terminal 321 is formed at the tip thereof. In the present embodiment, the DC positive electrode wiring 315A and the DC positive electrode conductor plate 315, and the DC negative electrode wiring 319A and the DC negative electrode conductor plate 319 are integrally formed, respectively. Further, the AC wiring 320 and the first AC conductor plate 316 are integrally formed, and this and the second AC conductor plate 318 are connected via an intermediate electrode 159 (see FIG. 8). Further, signal terminals 324U and 324L for connection with the driver circuit 174 are provided. Each of the external signal terminal 325U of the signal terminal 324U and the external signal terminal 325L of the signal terminal 324L is connected to the upper arm IGBT 155 and the lower arm IGBT 157 via wire bonding 327 as shown in FIG.

  The module case 304 is made of, for example, an aluminum alloy material such as Al, AlSi, AlSiC, Al-C, etc., and has an integrally formed can-shaped shape with no joints, that is, an insertion port 306 on a predetermined surface, and Has a bottomed rectangular parallelepiped shape. The module case 304 has a structure in which no opening is provided except for the insertion port 306. The outer periphery of the insertion port 306 is surrounded by the flange 304B.

  In the module case 304, as shown in FIG. 3, the heat radiation base 307 is arranged in a state of facing each other on two heat radiation surfaces having a larger area than the other surfaces. Of these four sides of the heat radiating surface, three sides constitute a surface sealed with a width narrower than the heat radiating surface, and an insertion port 306 is formed on the surface of the other side. The above structure does not have to be an accurate rectangular parallelepiped, and the corner portion may form a curved surface as shown in FIG. With the metallic module case 304 having such a shape, even when the module case 304 is inserted into a flow path through which a cooling medium such as water or oil flows, a seal against the cooling medium can be secured by the flange 304B. Therefore, it is possible to prevent the cooling medium from entering the inside of the module case 304 and the terminal portion with a simple configuration. Further, on the outer wall of the module case 304, the heat radiation fins 305 are uniformly formed on the opposed heat radiation base 307, and a curved portion 304A having an extremely thin thickness is formed on the outer periphery of the same surface. ing. Since the curved portion 304A is extremely thin to such an extent that it can be easily deformed by pressurizing the heat radiation fin 305, the productivity after the module primary sealing body 300m is inserted is improved.

  In the power semiconductor module 300, heat generated during operation of the power semiconductor element is diffused from both sides by the conductor plate and transmitted to the insulating sheet 333. Then, heat is radiated to the cooling medium from the heat radiation base 307 formed in the module case 304 and the heat radiation fin 305 provided on the heat radiation base 307. Therefore, high cooling performance can be realized.

  Here, the arrangement of the power semiconductor element and the conductor plate will be described in association with the electric circuit. In this embodiment, the power semiconductor elements are the upper arm IGBT 155, the lower arm IGBT 157, the upper arm diode 156, and the lower arm diode 158 as described above. The direct current positive electrode conductor plate 315 and the first alternating current conductor plate 316 are arranged in substantially the same plane. A collector electrode of the upper arm IGBT 155 and a cathode electrode of the upper arm diode 156 are fixed to the DC positive electrode conductor plate 315, and a collector electrode of the lower arm IGBT 157 and a cathode electrode of the lower arm diode 158 are fixed to the first AC conductor plate 316. It is fixed. Further, the second AC conductor plate 318 and the DC negative conductor plate 319 are arranged in substantially the same plane. The emitter electrode of the upper arm IGBT 155 and the anode electrode of the upper arm diode 156 are fixed to the second AC conductor plate 318, and the emitter electrode of the lower arm IGBT 157 and the anode electrode of the lower arm diode 158 are fixed to the DC negative conductor plate 319. It is fixed. Each of these power semiconductor elements is fixed to a fixing region 322 provided on each of the conductor plates. That is, the DC positive electrode conductor plate 315, the DC negative electrode conductor plate 319, the first AC conductor plate 316, and the second AC conductor plate 318 have a fixing surface including the fixing region 322. In each of these conductor plates, a heat transfer surface 323 is provided on the side opposite to the fixing surface, as shown in FIG. In FIG. 5, only the DC negative electrode conductive plate 319 and the heat transfer surface 323 of the second AC conductive plate 318 arranged on the front side are shown, but the DC positive electrode conductive plate 315 and the first AC conductive plate 316 on the back side are shown. Similarly, a heat transfer surface 323 is provided.

  Each power semiconductor element has a plate-like flat structure, and each electrode is formed on the front surface or the back surface. Therefore, as shown in FIG. 5, the DC positive electrode conductor plate 315 and the second AC conductor plate 318, and the first AC conductor plate 316 and the DC negative electrode conductor plate 319 are connected to each other through the IGBTs and diodes, that is, these power semiconductor elements. Is arranged in a stacked manner facing substantially parallel to each other. The first AC conductor plate 316 and the second AC conductor plate 318 are connected via the intermediate electrode 159. By this connection, the upper arm circuit and the lower arm circuit are electrically connected to form an upper and lower arm series circuit. The gate electrodes of the upper arm IGBT 155 and the lower arm IGBT 157 are connected to internal signal terminals (not shown), respectively.

  The electrode of each power semiconductor element and each corresponding conductor plate are electrically connected using a metal bonding material 160 (see FIG. 6) such as a solder material, a silver sheet, or a low-temperature sintered bonding material containing fine metal particles. And it adheres by thermally joining. As described above, the DC positive electrode wiring 315A is integrally formed with the DC positive electrode conductor plate 315, and the DC positive electrode terminal 315B is formed at the tip thereof. The DC negative electrode wiring 319A has the same basic structure, and is formed integrally with the DC negative electrode conductor plate 319, and a DC negative electrode terminal 319B is formed at the tip thereof.

  An auxiliary mold body 600 formed of a resin material is interposed between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A. The direct-current positive electrode wiring 315A and the direct-current negative electrode wiring 319A are formed in a shape extending in the opposite direction with respect to the position of the power semiconductor, substantially parallel to each other in the opposed state. The signal terminals 324U and 324L are formed integrally with the auxiliary mold body 600 and extend outward from the module in the same direction as the DC positive electrode wiring 315A and the DC negative electrode wiring 319A. Signal terminals 325U and 325L are provided, respectively.

  As the resin material used for the auxiliary mold body 600, an insulating thermosetting resin or a thermoplastic resin is suitable. The external signal terminals 325L and 325U are insert-molded in the auxiliary mold body 600. With such a structure, it is possible to ensure the insulation between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A and the insulation between the external signal terminals 325L and 325U and each wiring board. This structure enables high-density wiring.

  Furthermore, the direct current positive electrode wiring 315A and the direct current negative electrode wiring 319A are arranged so as to face each other substantially in parallel, so that a current that instantaneously flows during the switching operation of the power semiconductor element is supplied to the direct current positive electrode wiring 315A and the direct current negative electrode wiring 319A. They can be made to flow in opposite directions. The magnetic fields created by the currents flowing in opposite directions act to cancel each other. This action can reduce the inductance.

[Channel formation body]
The power semiconductor module 300 is disposed in a cooling channel formed in the base member of the power conversion device 200A (see FIG. 17), and is cooled by a cooling medium that circulates in the cooling channel. FIG. 9 is a perspective view from the front surface side of the base member according to the present embodiment, and FIG. 10 is a perspective view from the bottom surface side of the base member shown in FIG.
The base member (flow path forming body) 400 constituting a part of the casing 12 (see FIG. 2) of the power conversion device 200A is a cast product formed by casting aluminum or the like, or a resin molded product formed by a resin mold. And has a thin box shape having a rectangular peripheral wall 401.
On the upper surface 402 side of the base member 400, a capacitor placement recess 431 for storing the capacitor module 500 and the like, and an inductor placement recess 432 for storing the inductor 800 (see FIG. 2) and the like are formed.

A cooling channel 410 is formed in the base member 400. A cooling medium inlet pipe 421 provided through one side 401 a of the short side of the peripheral wall 401 is connected to one end side of the cooling flow path 410, and the peripheral wall 401 is connected to the other end side of the cooling flow path 410. A cooling medium outlet pipe 422 provided so as to penetrate the one side 401a is connected.
The cooling channel 410 is formed in a concave shape from the back surface 403 side of the base member 400. The cooling flow path 410 is formed in the 1st cooling jacket 411 and the peripheral edge part of the 1st cooling jacket 411 which were arrange | positioned linearly along the one side part 401b of the long side of the surrounding wall 401 from the cooling-medium inlet piping 421 side. Second cooling jacket 412 having a large area, a third cooling jacket 413 connected to the second cooling jacket 412, three fourth cooling jackets 414 adjacent to the third cooling jacket 413, and a fourth cooling jacket and a cooling medium outlet pipe Three fifth cooling jackets 415 are formed between the first and second cooling jackets 422. The back surface 403 of the base member 400 is sealed from the outside by a lid member (not shown). The first cooling jacket 411 and the second cooling jacket 412 form a relatively shallow recess when sealed by the lid member. Further, the third to fifth cooling jackets 413 to 415 form a recess that penetrates from the back surface 403 to the top surface 402.

  Each of the third cooling jacket 413, the three fourth cooling jackets 414, and the three fifth cooling jackets 415 extends in a direction perpendicular to the longitudinal direction of the first cooling jacket 411, and one end side is adjacent ( For example, it is connected to the other end side of the cooling jacket on the right side, and the other end side is connected to one end side of the adjacent (for example, left) side cooling jacket. That is, the third to fifth cooling jackets 413 to 415 are connected in a zigzag manner. Therefore, the cooling medium such as the cooling water flowing in from the cooling medium inlet pipe 421 flows along the longitudinal direction of the first cooling jacket 411 as shown by the dotted arrows in FIGS. The second cooling jacket 412 is folded, the third to fifth cooling jackets 413 to 415 meander and flow in a zigzag manner, and flow out of the cooling medium outlet pipe 422. That is, the third to fifth cooling jackets 413 to 415 are arranged in the order of the third cooling jacket 413, the fourth cooling jacket 414, and the fifth cooling jacket 415 from the upstream side toward the downstream side.

  On the upper surface 402 of the base member 400, module insertion ports 445 for inserting the power semiconductor modules 300 into the first to fifth cooling jackets 411 to 415 are provided. The planar size of each module insertion slot 445 can be inserted into the module case 304 of the power semiconductor module 300 and is smaller than the flange 304B of the module case 304. Therefore, the power semiconductor module 300 can be fixed by a fastening member (not shown) in a state where the bottom surface side of the module case 304 is inserted from the module insertion port 445 and the flange 304B is in close contact with the upper surface 402 of the base member 400. ing.

[Cooling jacket with draft]
11 and 12 are diagrams for explaining a process of attaching the power semiconductor module to the cooling jacket (first flow path space) having a draft angle.
A draft is formed in a jacket formed by casting or injection molding. A cooling jacket having a draft angle (hereinafter referred to as a “cooling jacket with a draft angle”) J _n has inner walls 442 facing each of a pair of heat radiation fins 305 formed in the module case 304. Each inner wall 442 is an inclined surface in a direction in which the width between the inner wall 442 and the inner wall facing the inner wall 442 increases from the bottom 441 side toward the module insertion port 445 side. In the power semiconductor module 300, the annular seal material 462 is interposed between the base member 400 and the flange 304B is the base, with the annular seal material 461 fitted to the base of the flange 304B of the module case 304. The base member 400 is fixed so as to be crimped to the upper surface 402 of the member 400.

Figure 13 is a view for explaining a cooling medium flowing between the beveled cooling jacket J _n inner wall 442 of the vent and the power semiconductor module 300.
The space between the power semiconductor module 300 and vent the inner wall 442 of the beveled cooling jacket J _n, to draft with a cooling jacket J _n inner wall 442 of is inclined, as shown by a dotted line in FIG. 13, bottom It gradually becomes wider from the 441 side toward the module insertion port side.
The cooling medium flowing through the region where the heat radiation fins 305 are formed has a great effect of cooling the heat generated from the heat radiation fins 305. However, the space S _B between the tip of the radiation fins 305 to the inner wall 442 of the draft with a cooling jacket J _n is called a space where bypass flow is generated, the cooling of the heat generated from the power semiconductor module 300 Small effect.
That is, in the cooling jacket J _n with a draft, a space S _{B in} which a bypass flow of the cooling medium is generated is formed.

[Draft cutting]
FIG. 14 is a cross-sectional view showing a state where the power semiconductor module 300 is inserted into the cooling jacket (second flow path space) with the draft removed.
The cooling jacket (hereinafter, referred to as “draft cutting jacket”) J _w having the draft cut away has a pair of inner walls 447 from which the draft has been cut. Width between the pair of inner wall 447 in the draft excised jacket J _w is over the entire height from the bottom 441 side to the module insertion hole 445 side, it is substantially the same. Each inner wall 447 is provided at a position having a slight gap from the upper surface of the heat radiation fin 305 facing each other. In this state, the space S _B the bypass flow is generated is not formed almost.
Therefore, when assuming a flow rate of the cooling water and the same, the cooling effect in the case of using the draft resection jacket J _w is compared with the case of using the draft jacket J _n, the bypass flow space S _B It is improved by suppressing the flow rate. Accordingly, it is possible to increase the driving efficiency of the pump that circulates the cooling medium and improve the cooling efficiency.

FIG. 15 is a view for explaining a method of cutting the draft of the inner wall of the flow path space, FIG. 15A is a cross-sectional view of the flow path space having the draft, and FIG. 15B and FIG. 15 (c) is a cross-sectional view showing a method for forming the flow path space with the draft removed.
FIG. 15A is a cross-sectional view of a cooling jacket J _n with a draft formed in the base member 400 by casting or resin molding. As described above, the cooling jacket J _n with a draft has a pair of inner walls 442 having a draft. A space S _B that generates a bypass flow due to the draft of the inner wall 442 is formed in the vicinity of each inner wall-attached 442.
Draft resection jacket J _w, as shown in FIG. 15 (b), the module insertion slot 445 side is formed in a width W _B of the same or slightly smaller than that of the draft with a cooling jacket J _n of the bottom 441 The That is, in the manufacturing of the base member 400 by casting or resin molding, equal to the width W _B with draft width W _T of the module insertion hole 445 of the cooling jacket J _wa ablating draft cooling jacket J _n of the bottom 441 or It is formed to be slightly smaller than that.

Next, the working tool T _D such as a drill each inner wall 447a of the jacket J _wa ablating draft, machined perpendicularly from the module insertion opening 445 to the upper surface of the bottom portion 441, to ablate the draft. The distance between the pair of inner wall 447a of the jacket J _wa ablating draft is set to be the same as the inner wall 447a of the draft resection jacket J _w to be formed. After excision the draft of the inner wall 447a in this way, inserted into the slope cut jacket J _w unplug the power semiconductor module 300. Thus, as illustrated in FIG. 14, the power semiconductor module 300 to the draft resection jacket J _w is attached, there is almost no space S _B for generating a bypass flow, the cooling efficiency is high cooling device is formed .

[Arrangement of cooling jacket]
Figure 16 is a diagram showing an embodiment of method of selecting the arrangement of the draft resection jacket J _w and draft with a cooling jacket J _n.
The power conversion circuit 200 illustrated in FIGS. 1 and 2 includes a power semiconductor module 300C for the boost converter 144, a power semiconductor module 300A for the inverter circuit 140, and a power semiconductor module 300B for the inverter circuit 142. The power semiconductor modules 300A, 300B, and 300C have the same structure and external size. Among the power semiconductor modules 300C, 300A, and 300B, the power semiconductor module 300C for the boost converter 144 has the largest energization amount and heat generation amount. Therefore, the draft resection jacket J _w a third cooling jacket 313 which power semiconductor module 300C is mounted.

Energization amount or current amount and the amount of heat generated power semiconductor module smaller power semiconductor module 300A than 300C, a cooling jacket for attaching the 300B are both, as the fifth cooling jackets 415, the draft with a cooling jacket J _n. Alternatively, in the two, only the cooling jacket a larger current amount or the energization amount and heating value are mounted, like the third cooling jacket 313, a draft cut jacket J _w.
For example, the inverter circuit 140 is a power semiconductor module 300B that constitutes a power running inverter that converts DC power into AC power, and the inverter circuit 142 constitutes a power generation inverter or a regeneration inverter that converts AC power into DC power. when a power semiconductor module 300A, a draft cut jacket J _w a cooling jacket power semiconductor module 300A is attached. The cooling jacket to which the power semiconductor module 300B having the smallest energization amount or energization amount and heat generation amount is attached is referred to as a cooling jacket J _n with a draft.

All third to fifth cooling jacket 413 to 415, may improve the cooling efficiency by the draft resection jacket J _w. However, improving the cooling capacity of the power semiconductor modules 300A to 300C having different energization amounts or energization amounts and heat generation amounts is excessive for power semiconductor modules with small energization amounts or energization amounts and heat generation amounts. The cooling system is wasted, and the power of the cooling system is wasted.
Cutting the draft of the cooling jacket takes a lot of man-hours, so the cooling performance was secured while reducing the production cost by omitting the draft cutting for the power semiconductor module with small amount of electricity or electricity and heat generation. The power conversion device 200A can be obtained.

FIG. 17 is a perspective view of the power conversion device corresponding to the arrangement of the cooling jacket illustrated in FIG. 16.
The capacitor module 500 is housed in the capacitor placement recess 431 (see FIG. 9) of the base member 400, and the inductor 800 is housed in the inductor placement recess 432 (see FIG. 9).
The power semiconductor module 300 </ b> C constituting the boost converter 144 is inserted through the third cooling jacket 413. Third cooling jacket 413 is a draft ablation jacket J _w, and has an inner wall 447 (see FIG. 15) of the space S _B for generating a bypass flow hardly exists.

The power semiconductor module 300 </ b> B having the smallest energization amount or energization amount and heat generation amount is inserted into the fifth cooling jacket 415 of the base member 400. The fifth cooling jacket 415 is a drafted cooling jacket J _n and has an inner wall 442 having a casting or injection molding draft.

The fourth cooling jacket 414 of the base member 400 is inserted with a power semiconductor module 300B having an energization amount or an energization amount and a heat generation amount intermediate between the power semiconductor module 300C and the power semiconductor module 300A. Fourth cooling jacket 414 may be a draft with a cooling jacket J _n, it may be a draft ablation jacket J _w.

  According to the embodiment of the power conversion device of the present invention, the following effects are obtained.
(1) Cooling jacket J in base member 400 formed by casting or resin molding _waDraft cut jacket J which cuts draft of inner wall 447a and suppresses generation of bypass flow_wIt was. Draft cut jacket J_wIs a jacket with draft angle J_nCompared to the above, the cooling efficiency can be improved.

(2) heating value is drained and beveled cooling jacket J _n greater power semiconductor module disconnect 300C gradient resection jacket J _w and generate heat amount is small power semiconductor module 300B. That was a gradient excised jacket J _w disconnect only a portion of the plurality of cooling jacket 413 to 415. In this way, a cooling jacket with an appropriate cooling capacity corresponding to the characteristics of the power semiconductor module is applied, and the draft cutting time is minimized, so that productivity is optimized and power distribution required for cooling is optimized. Can be achieved.

In the embodiment described above, the draft resection jacket J _w, exemplified as structures arranged on the upstream side of the draft with a cooling jacket J _n cooling channel 410 than. However, the draft resection jacket J _w, a structure may be employed to dispose the downstream side of the draft with a cooling jacket J _n cooling channel 410 than. However, the temperature of the cooling medium is lower on the upstream side of the cooling flow path 410 and the cooling capacity is higher than that on the downstream side. For this reason, when the calorific value of the power semiconductor module 300C is overwhelmingly larger than that of the power semiconductor modules 300A and 300B, the draft cutting jacket _Jw is arranged on the upstream side of the cooling channel 410 for each cooling. This is advantageous for achieving uniform cooling capacity of the jacket.

In the above embodiment, a plurality of the cooling jacket 413 to 415, a cooling jacket 413 (414) and the draft resection jacket J _w, was ramped cooling jacket J _n disconnect the other cooling jacket 415 (414) Illustrated as a structure. However, all of the cooling jacket 413 to 415, may be draft resection jacket J _w.

--Embodiment 2--
Figure 18 relates to a second embodiment of the present invention is a diagram showing another method of selecting the arrangement of the draft resection jacket Jw and draft with a cooling jacket Jn, 19, the cooling jacket shown in Figure 18 It is a perspective view of a base member corresponding to the arrangement of
The temperature rises in the process of cooling the heat generated in the power semiconductor module 300. The temperature of the cooling medium flowing through the cooling flow path 410 gradually increases from upstream to downstream. For this reason, the temperature of the cooling medium is higher in the cooling jacket 115 on the downstream side of the cooling flow path 410 than in the cooling jacket 413 on the cooling medium inlet side that is upstream of the cooling flow path 410. Cooling capacity is low. In the second embodiment, the cooling capacity of each cooling jacket is averaged by increasing the cooling capacity of the cooling jacket 415 on the downstream side of the cooling flow path 410.

As shown in FIG. 19, in the second embodiment, the cooling jacket 413 on the upstream side of the cooling channel 410 is a cooling jacket J _n with a draft, and the cooling jacket 415 on the downstream side is a draft cutting jacket J _w. It is said that. The cooling jacket 414 disposed between the cooling jacket 413 and the cooling jacket 415 may be either the draft cutting jacket _Jw or the draft cooling jacket J _n .
In the second embodiment, the same effect as in the first embodiment is obtained.

--Embodiment 3--
FIG. 20 is a diagram illustrating still another method of selecting the arrangement of the draft cutting jacket _Jw and the draft cooling jacket J _{n according to} the third embodiment of the present invention, and FIG. 21 is illustrated in FIG. FIG. 6 is a perspective view of a base member corresponding to the arrangement of the cooling jacket.
The power semiconductor module 300 can be reduced in cost by reducing the chip size of power semiconductor elements such as the built-in IGBT 155 and diode 158 (see FIGS. 3 and 4). When the chip size is reduced, the material cost and productivity can be improved, and the cost can be reduced.
However, the thermal resistance of the power semiconductor module 300 is inversely proportional to the chip size of the power semiconductor element.

Therefore, the cooling jacket to which the power semiconductor module containing the miniaturized chip is attached is the draft cutting jacket _Jw, and the cooling jacket to which the power semiconductor module containing the chip whose chip size is not controlled is attached is drafted. _Let it be a cooling jacket Jn.
Whether a draft resection jacket J _w determination is compared with the increase in the ablation processing cost draft, and increase in manufacturing costs of the power semiconductor module chip it is built that is not the chip size suppressed And do it. (If the draft cutting cost increases) <(difference between the manufacturing cost of the power semiconductor module incorporating the chip whose chip size is not suppressed and the manufacturing cost of the semiconductor module having a smaller chip size) , the draft resection jacket J _w.

In Figure 21, draft ablation jacket J _w, either cooling channel 410 upstream, regardless downstream, may be set to any of the cooling jacket 413 to 415.
For all of the power semiconductor module 300A to 300C, when the condition is satisfied, it can be a gradient ablation jacket J _w disconnect all of the cooling jacket 413 to 415.
In the third embodiment, the same effect as in the first embodiment is obtained.

--Embodiment 4--
  FIG. 22 is a perspective view of the base member according to the fourth embodiment of the present invention.
  Three cooling jackets 416 are formed on the base member 400A in the fourth embodiment. As described above, when the number of cooling jackets 416 is small, all of them are drafted and cut out._wEven so, the increase in processing cost required for draft cutting can be made relatively small.
  Everything is draft cut jacket J_wFor example, power semiconductor modules U1, V1, and W1 (see FIG. 2) that generate outputs of three-phase AC phases are attached to the motor generator 192. Each power semiconductor module U1, V1, W1 constitutes a power running and regenerative inverter.
  In the fourth embodiment, all the cooling jackets 416 are connected to the draft cutting jacket J. _wAnd space S that generates a bypass flow_BThere was no structure. For this reason, the cooling efficiency by a cooling jacket can be improved.

  In each of the above embodiments, the third to fifth cooling jackets 413 to 415 are connected to only one side of the adjacent cooling jacket on one end side and the other end side, and meander in a zigzag shape not connected to the other side. It was illustrated as a cooling flow path. However, the third to fifth cooling jackets 413 to 415 may be cooling channels connected to both sides of adjacent cooling jackets at both ends. Further, the cooling jackets 413 to 415 are illustrated as cooling flow paths extending in a direction perpendicular to the longitudinal direction of the first cooling jacket 411. However, the third to fifth cooling jackets 413 to 415 may be cooling channels extending in a direction parallel to the longitudinal direction of the first cooling jacket 411, and the directions of the third to fifth cooling jackets 413 to 415 are the same. There is no limit.

  In the said embodiment, it illustrated as the power semiconductor module 300 with which the fin 305 for thermal radiation was provided in the front and back both surfaces. However, the present invention can also be applied to the power semiconductor module 300 in which the heat radiation fin 305 is provided only on one surface. In this case, it is only necessary to cut out the draft only on the inner wall 447a facing the heat radiation fin 305.

  The structure and size of the base member 400 are not limited to the embodiment and can be changed as appropriate.

  In the said embodiment, it illustrated as power conversion apparatus 200A applied to the hybrid vehicle. However, power converters used in vehicles such as electric vehicles, power converters used in trains, ships, aircraft, etc., industrial power converters used as control devices for motors that drive factory equipment, or The present invention can also be applied to a home power conversion device that is used in a home solar power generation system or a control device for an electric motor that drives home appliances.

  In addition, the present invention can be applied with various modifications within the scope of the gist of the present invention. In short, in a power conversion device in which a power semiconductor module having a heat radiation fin is inserted into each of a plurality of flow path spaces provided in the flow path formation body, the heat radiation fin in at least one flow path space is faced. What is necessary is just to excise the draft of the inner wall.

140, 142 Inverter circuit 144 Boost converter 155, 157 IGBT (power semiconductor element)
156, 158 Diode (Power Semiconductor Device)
192, 194 Motor generator 200 Power converter 300, 300A-300C Power semiconductor module 300m Module primary sealing body 304 Module case 305 Heat radiation fin 400, 400A Base member (flow path forming body)
410 Cooling flow path 411-415 Cooling jacket 421 Cooling medium inlet piping 422 Cooling medium outlet piping 441 Bottom 442 Inner wall 445 Module insertion port 447 Inner wall (draft cutting)
447a Inner wall (before draft removal)
J _n Cooling jacket with draft angle J _w Draft cutting jacket SB space (bypass flow generator)
U1, V1, W1 Power semiconductor module

Claims (14)

A first power semiconductor module in which a heat dissipation fin is provided on at least one surface of a module case containing a power semiconductor element therein;
A second power semiconductor module in which a heat dissipation fin is provided on at least one surface of a module case containing a power semiconductor element therein;
A first flow path space through which an area of the module case in which at least the heat radiation fin of the first power semiconductor module is provided is inserted; An insertion port for inserting a power semiconductor module is formed, and is formed in communication with a second flow path space through which an area of the module case provided with at least the heat radiation fin of the second power semiconductor module is inserted. A flow path forming body having a cooling flow path through which a cooling medium flows, and
The flow path forming body is formed by casting or resin molding, and is at least one of an inner wall facing the heat radiating fin in the first flow path space or an inner wall facing the heat radiating fin in the second flow path space. A power conversion device in which a draft formed from the bottom surface side of the flow path forming body to the insertion port side is cut off. The power conversion device according to claim 1,
The second power semiconductor module has a larger energization amount than the first power semiconductor module,
The inner wall of the second flow path space has a draft removed,
The power conversion device, wherein the inner wall of the first flow path space has a draft angle. The power conversion device according to claim 1,
The second power semiconductor module generates a larger amount of heat than the first power semiconductor module,
The inner wall of the second flow path space has a draft removed,
The power conversion device, wherein the inner wall of the first flow path space has a draft angle. In the power converter device according to claim 2 or 3,
The power conversion device, wherein the second power semiconductor module is arranged on the upstream side of the cooling flow path with respect to the first power semiconductor module. The power conversion device according to claim 4,
A plurality of the second power semiconductor modules;
The flow path forming body is formed with a plurality of second flow path spaces through which each of the second power semiconductor modules is inserted,
The first power semiconductor module constitutes a power generation inverter or a regenerative inverter that converts AC power into DC power,
The second power semiconductor module is a power conversion device that constitutes a power running inverter that converts DC power into AC power. The power conversion device according to claim 4,
A plurality of the first power semiconductor modules;
The flow path forming body is formed with a plurality of first flow path spaces through which the first power semiconductor modules are inserted.
The first power semiconductor module constitutes a power generation inverter that converts AC power into DC power or a power running inverter that converts DC power into AC power,
The second power semiconductor module is a power conversion device constituting a boost converter. The power conversion device according to claim 6, wherein
The first power semiconductor module is a power conversion device that constitutes the power generation inverter and the power running inverter. The power conversion device according to claim 1,
The inner wall of the second flow path space has a draft removed,
The inner wall of the first flow path space has a draft angle,
The power conversion device, wherein the second flow path space is disposed downstream of the cooling flow path with respect to the first flow path space. The power conversion device according to claim 1,
The power semiconductor element incorporated in the second power semiconductor module is smaller than the power semiconductor element incorporated in the first power semiconductor module;
The inner wall of the second flow path space has a draft removed,
The power conversion device, wherein the inner wall of the first flow path space has a draft angle. The power conversion device according to claim 1,
The module case of the first power semiconductor module and the module case of the second power semiconductor module are power converters having the same shape and outer size. The power conversion device according to claim 1,
Each of the module case of the first power semiconductor module and the module case of the second power semiconductor module is provided with a heat radiation fin on the other surface facing the one surface, and the first flow path space or the The power conversion device, wherein an inner wall facing the inner wall from which the draft angle in the second flow path space is cut is also cut away. The power conversion device according to claim 11,
The power semiconductor element incorporated in each of the first power semiconductor module and the second power semiconductor module is disposed between a pair of metal plates,
One of the metal plates is disposed on the one surface of the module case so as to be thermally conductive,
The other side of the said metal plate is a power converter device arrange | positioned by the said other surface of the said module case so that heat conduction is possible. The power conversion device according to claim 1,
The first power semiconductor module and the second power semiconductor module differ in power generation amount or heat generation amount,
A power conversion device in which a draft is cut off from the inner wall of the first flow path space and the inner wall of the second flow path space. The power conversion device according to claim 1,
Furthermore, it comprises a third power semiconductor module provided with heat dissipation fins on one side,
In the flow path forming body, the third power semiconductor module is inserted, and a third flow path space having an inner wall facing the heat radiation fin of the third power semiconductor module is formed,
The inner wall of each of the first flow path space, the second flow path space, and the third flow path space has a draft removed,
The first power semiconductor module, the second power semiconductor module, and the third power semiconductor module constitute a motor control inverter.

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