JP5793028B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents

基板処理装置及び半導体装置の製造方法 Download PDF

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Publication number
JP5793028B2
JP5793028B2 JP2011191121A JP2011191121A JP5793028B2 JP 5793028 B2 JP5793028 B2 JP 5793028B2 JP 2011191121 A JP2011191121 A JP 2011191121A JP 2011191121 A JP2011191121 A JP 2011191121A JP 5793028 B2 JP5793028 B2 JP 5793028B2
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impedance
substrate
processing
electrode
unit
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JP2011191121A
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Japanese (ja)
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JP2013055165A5 (OSRAM
JP2013055165A (ja
Inventor
克典 舟木
克典 舟木
忠司 堀江
忠司 堀江
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2011191121A 2011-09-01 2011-09-01 基板処理装置及び半導体装置の製造方法 Expired - Fee Related JP5793028B2 (ja)

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JP2011191121A JP5793028B2 (ja) 2011-09-01 2011-09-01 基板処理装置及び半導体装置の製造方法

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JP2011191121A JP5793028B2 (ja) 2011-09-01 2011-09-01 基板処理装置及び半導体装置の製造方法

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JP2013055165A JP2013055165A (ja) 2013-03-21
JP2013055165A5 JP2013055165A5 (OSRAM) 2014-10-09
JP5793028B2 true JP5793028B2 (ja) 2015-10-14

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6202701B2 (ja) * 2014-03-21 2017-09-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101557223B1 (ko) * 2014-03-25 2015-10-05 (주)아이씨디 유도결합용 플라즈마 처리 시스템
JP6126155B2 (ja) 2015-03-31 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
KR102876257B1 (ko) * 2020-03-11 2025-10-27 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546995B2 (ja) * 1986-10-30 1996-10-23 日本真空技術株式会社 真空槽内における基板の表面処理方法及び装置
EP0280074B1 (en) * 1987-02-24 1995-12-20 International Business Machines Corporation Plasma reactor
JPH07263411A (ja) * 1994-03-17 1995-10-13 Sony Corp プラズマエッチング装置
JPH08316212A (ja) * 1995-05-23 1996-11-29 Hitachi Ltd プラズマ処理方法及びプラズマ処理装置
JP3436931B2 (ja) * 2000-05-04 2003-08-18 東京エレクトロン株式会社 プラズマを用いて基板を処理するための装置および方法
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치

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