JP5780289B2 - Electronics - Google Patents
Electronics Download PDFInfo
- Publication number
- JP5780289B2 JP5780289B2 JP2013269558A JP2013269558A JP5780289B2 JP 5780289 B2 JP5780289 B2 JP 5780289B2 JP 2013269558 A JP2013269558 A JP 2013269558A JP 2013269558 A JP2013269558 A JP 2013269558A JP 5780289 B2 JP5780289 B2 JP 5780289B2
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- insulating substrate
- conductive member
- electronic component
- fastening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
本発明は、電子機器に関する。 The present invention relates to an electronic device.
銅板等から回路導体を打ち抜き成形した後、折り曲げ加工により端子部を立ち上げ、回路導体を絶縁基板に接着固定した大電流回路基板が、例えば特許文献１に開示されている。端子部は、グランドに接続された導電部材と接触することで、大電流を流す電流経路を形成している。 For example, Patent Document 1 discloses a high-current circuit board in which a circuit conductor is punched and formed from a copper plate or the like, a terminal portion is raised by bending, and the circuit conductor is bonded and fixed to an insulating substrate. The terminal portion is in contact with a conductive member connected to the ground, thereby forming a current path through which a large current flows.
しかしながら、絶縁基板の線膨脹係数と回路導体の線膨脹係数との違いにより、電子部品から発せられる熱によって、大電流回路基板が反る場合がある。大電流回路基板が反ると、端子部と導電部材との接触面積が小さくなってしまい、電流経路において大電流を流すことができなくなってしまう。 However, due to the difference between the linear expansion coefficient of the insulating substrate and the linear expansion coefficient of the circuit conductor, the large current circuit board may be warped by heat generated from the electronic component. When the large current circuit board is warped, the contact area between the terminal portion and the conductive member is reduced, and a large current cannot be passed through the current path.
本発明は、上記課題を解決するためになされたものであって、その目的は、電流経路において大電流を流すことができる電子機器を提供することにある。 The present invention has been made to solve the above problems, and an object of the present invention is to provide an electronic device capable of flowing a large current in a current path.
上記課題を解決する電子機器は、電子部品の第１電極と電気的に接続される第１金属板と、前記電子部品における前記第１電極とは異なる極性の第２電極と電気的に接続される第２金属板と、前記第１金属板と前記第２金属板とを絶縁する絶縁基板と、を有する回路基板を備え、グランドに接続される導電部材を有し、前記第２金属板を流れる電流を、前記導電部材に電気的に接続される負荷へ供給する電子機器であって、前記絶縁基板は、前記第１金属板に積層され、前記絶縁基板には貫通孔が形成されており、前記第１金属板には、前記貫通孔に対応する部分に前記電子部品が搭載されており、前記第１金属板と前記導電部材とは締結部材によって締結され、前記締結部材の締結によって前記第１金属板の前記貫通孔に対応する部分の下面と前記導電部材の面とが前記絶縁基板を介することなく直接接触している。 An electronic device that solves the above problems is electrically connected to a first metal plate that is electrically connected to a first electrode of an electronic component, and a second electrode that has a polarity different from that of the first electrode in the electronic component. A circuit board having a second metal plate and an insulating substrate that insulates the first metal plate and the second metal plate, and has a conductive member connected to a ground, and the second metal plate An electronic device for supplying a flowing current to a load electrically connected to the conductive member, wherein the insulating substrate is laminated on the first metal plate, and a through hole is formed in the insulating substrate. The electronic component is mounted on the first metal plate at a portion corresponding to the through hole, and the first metal plate and the conductive member are fastened by a fastening member, and the fastening of the fastening member under portion corresponding to the through hole of the first metal plate The surface of the conductive member is in direct contact without interposing the insulating substrate and.
これによれば、電子部品から発せられる熱によって、回路基板が導電部材に対して反るように変形しようとしても、第１金属板の面と導電部材の面との接触を締結部材の締結により確保することができる。よって、締結部材によって第１金属板と導電部材とを締結するだけで、第１金属板と導電部材とを電気的に接続することができ、導電部材、第１金属板、第１電極、第２電極、第２金属板、負荷を流れて導電部材へ還流する電流の電流経路を確保することができる。その結果、電流経路において大電流を流すことができる。また、第１金属板と導電部材との間に絶縁基板が介在されている場合に比べると、電子部品から発せられる熱を、第１金属板から導電部材に効率良く放熱することができる。 According to this, even if the circuit board tries to deform so as to warp against the conductive member due to the heat generated from the electronic component, the contact between the surface of the first metal plate and the surface of the conductive member is caused by the fastening of the fastening member. Can be secured. Therefore, the first metal plate and the conductive member can be electrically connected only by fastening the first metal plate and the conductive member with the fastening member, and the conductive member, the first metal plate, the first electrode, The current path of the current flowing through the two electrodes, the second metal plate, and the load and returning to the conductive member can be secured. As a result, a large current can flow in the current path. In addition, compared to the case where an insulating substrate is interposed between the first metal plate and the conductive member, heat generated from the electronic component can be efficiently radiated from the first metal plate to the conductive member.
上記電子機器において、前記絶縁基板には貫通孔が形成されており、前記第１金属板は、前記絶縁基板の第１面に接着される接着部位と、前記貫通孔を通過して前記絶縁基板の第１面とは反対側の面である第２面よりも突出するとともに前記電子部品が搭載される搭載部を有する突出部と、を有し、前記第２金属板は、前記絶縁基板の第２面に接着されており、前記第１金属板は、前記絶縁基板を介することなく前記導電部材に熱的に結合されていることが好ましい。 In the electronic apparatus, a through hole is formed in the insulating substrate, and the first metal plate passes through the through hole and the bonding portion bonded to the first surface of the insulating substrate, and the insulating substrate. And a protruding portion having a mounting portion on which the electronic component is mounted and protruding from a second surface that is a surface opposite to the first surface of the first metal plate. It is preferable that the first metal plate is bonded to the second surface and is thermally coupled to the conductive member without the insulating substrate interposed therebetween.
これによれば、第１金属板と導電部材との間に絶縁基板が介在されている場合に比べると、電子部品から発せられる熱を、第１金属板から導電部材に効率良く放熱することができる。 According to this, compared with the case where the insulating substrate is interposed between the first metal plate and the conductive member, the heat generated from the electronic component can be efficiently radiated from the first metal plate to the conductive member. it can.
上記電子機器において、前記第１金属板と前記導電部材との間には放熱グリスが介在されており、前記第１金属板及び前記導電部材の少なくとも一方には、前記締結部材の締結によって前記第１金属板と前記導電部材とが直接接触する部位を囲む環状溝が形成されていることが好ましい。 In the electronic device, heat dissipation grease is interposed between the first metal plate and the conductive member, and at least one of the first metal plate and the conductive member is connected to the first metal plate by fastening the fastening member. It is preferable that an annular groove surrounding a portion where one metal plate and the conductive member are in direct contact is formed.
これによれば、電子部品から発せられる熱における第１金属板から導電部材への熱伝達を、放熱グリスによって促進させることができるため、電子部品から発せられる熱をさらに効率良く放熱することができる。また、放熱グリスが環状溝に流れ込む分、第１金属板と導電部材との間に放熱グリスが流れ込んでしまうことを抑制することができ、第１金属板と導電部材とが放熱グリスを介することなく直接接触した状態を確保することができる。 According to this, since heat transfer from the first metal plate to the conductive member in the heat generated from the electronic component can be promoted by the heat dissipation grease, the heat generated from the electronic component can be radiated more efficiently. . Moreover, since heat radiation grease flows into the annular groove, it is possible to suppress the heat radiation grease from flowing between the first metal plate and the conductive member, and the first metal plate and the conductive member are interposed via the heat radiation grease. It is possible to ensure a direct contact state.
この発明によれば、電流経路において大電流を流すことができる。 According to the present invention, a large current can flow in the current path.
以下、電子機器を具体化した一実施形態を図１〜図３にしたがって説明する。
図１及び図２に示すように、電子機器１０は、電子部品１１が複数（本実施形態では４つ）搭載される第１金属板２０と、第１金属板２０の一部の上面に積層される絶縁基板３０と、絶縁基板３０の上面に積層される第２金属板３１とからなる回路基板１０ａを有する。さらに、電子機器１０は、第１金属板２０と熱的に結合された導電部材としての放熱部材１２を有する。放熱部材１２は、第１金属板２０とは異なる材料であるアルミニウムにより形成されるとともに、グランドに接続されている。
Hereinafter, an embodiment in which an electronic device is embodied will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the electronic device 10 includes a first metal plate 20 on which a plurality of electronic components 11 (four in this embodiment) are mounted, and a stack on a part of the upper surface of the first metal plate 20. The circuit board 10a includes the insulating substrate 30 to be formed and the second metal plate 31 stacked on the upper surface of the insulating substrate 30. Furthermore, the electronic device 10 includes a heat radiating member 12 as a conductive member that is thermally coupled to the first metal plate 20. The heat radiating member 12 is formed of aluminum which is a material different from that of the first metal plate 20 and is connected to the ground.
第１金属板２０は、放熱部材１２の上面に積層されている。第１金属板２０は、厚さ０．５ｍｍの平板状の銅板からなるとともに、所定の形状にパターニングされている。また、第１金属板２０は、その一部が折り曲げられている。具体的には、第１金属板２０は、第１折曲線Ｐ１にて上側（谷折り）に折り曲げられるとともに、第２折曲線Ｐ２にて下側（山折り）に折り曲げられ、さらに、第３折曲線Ｐ３にて下側（山折り）に折り曲げられるとともに、第４折曲線Ｐ４にて上側（谷折り）に折り曲げられている。 The first metal plate 20 is laminated on the upper surface of the heat dissipation member 12. The first metal plate 20 is made of a flat copper plate having a thickness of 0.5 mm and is patterned into a predetermined shape. Further, a part of the first metal plate 20 is bent. Specifically, the first metal plate 20 is bent upward (valley fold) at the first folding curve P1, bent downward (mountain folding) at the second folding curve P2, and further, third It is bent downward (mountain fold) at the folding line P3 and is bent upward (valley fold) at the fourth folding line P4.
第１金属板２０は、第２折曲線Ｐ２と第３折曲線Ｐ３との間に形成される突出部２１と、第１折曲線Ｐ１から第２折曲線Ｐ２とは反対側に延びる第１外周部２２と、第１外周部２２と突出部２１とを繋ぐ第１屈曲部２３とを有する。さらに、第１金属板２０は、第４折曲線Ｐ４から第３折曲線Ｐ３とは反対側に延びる第２外周部２４と、第２外周部２４と突出部２１とを繋ぐ第２屈曲部２５とを有する。突出部２１、第１外周部２２及び第２外周部２４は互いに平行に延びている。 The first metal plate 20 includes a protruding portion 21 formed between the second fold curve P2 and the third fold curve P3, and a first outer periphery extending from the first fold curve P1 to the opposite side of the second fold curve P2. Part 22, and first bent part 23 that connects first outer peripheral part 22 and protruding part 21. Further, the first metal plate 20 includes a second outer peripheral portion 24 extending from the fourth folding line P4 to the opposite side of the third folding line P3, and a second bent portion 25 connecting the second outer peripheral portion 24 and the protruding portion 21. And have. The protruding portion 21, the first outer peripheral portion 22, and the second outer peripheral portion 24 extend in parallel to each other.
図１において破線で示すように、第１外周部２２には、突出部２１の両側に延在するとともに突出部２１よりも下方に位置する平面視Ｌ字状の一対の延在部２２ａ，２２ｂが形成されている。第２外周部２４には、突出部２１の両側に延在するとともに突出部２１よりも下方に位置する平面視Ｌ字状の一対の延在部２４ａ，２４ｂが形成されている。各延在部２２ａ，２４ａの先端部同士は対向配置されるとともに、各延在部２２ｂ，２４ｂの先端部同士は対向配置されている。 As shown by a broken line in FIG. 1, the first outer peripheral portion 22 has a pair of extending portions 22 a and 22 b that extend on both sides of the protruding portion 21 and are located below the protruding portion 21 and are L-shaped in plan view. Is formed. The second outer peripheral portion 24 is formed with a pair of extending portions 24 a and 24 b having an L shape in plan view that extends on both sides of the protruding portion 21 and is positioned below the protruding portion 21. The distal ends of the extending portions 22a and 24a are opposed to each other, and the distal ends of the extending portions 22b and 24b are opposed to each other.
図２に示すように、第１外周部２２及び第２外周部２４の上面には平板状の絶縁基板３０が積層された状態で接着されている。よって、第１外周部２２及び第２外周部２４は、第１金属板２０における絶縁基板３０の下面（第１面）に接着される接着部位を形成している。絶縁基板３０の中央部には、第１金属板２０の突出部２１が通過可能な貫通孔３０ｈが形成されている。突出部２１の上面は、貫通孔３０ｈを通過して絶縁基板３０の上面（絶縁基板３０の第１面とは反対側の面である第２面）よりも突出している。 As shown in FIG. 2, a flat insulating substrate 30 is bonded to the upper surfaces of the first outer peripheral portion 22 and the second outer peripheral portion 24 in a stacked state. Therefore, the first outer peripheral portion 22 and the second outer peripheral portion 24 form an adhesion portion that is bonded to the lower surface (first surface) of the insulating substrate 30 in the first metal plate 20. A through hole 30 h through which the protruding portion 21 of the first metal plate 20 can pass is formed in the central portion of the insulating substrate 30. The upper surface of the protrusion 21 protrudes from the upper surface of the insulating substrate 30 (second surface opposite to the first surface of the insulating substrate 30) through the through hole 30h.
図１に示すように、絶縁基板３０の上面には、第２金属板３１が積層された状態で接着されている。第２金属板３１は厚さ０．５ｍｍの平板状の銅板からなるとともに、所定の形状にパターニングされている。第２金属板３１は、第１金属板２０の第１外周部２２及び第２外周部２４に重なり合う位置に配置されている。突出部２１の上面、及び第２金属板３１の上面はそれぞれ同一平面上に位置している。絶縁基板３０は、第１金属板２０と第２金属板３１とを絶縁している。 As shown in FIG. 1, a second metal plate 31 is bonded to the upper surface of the insulating substrate 30 in a stacked state. The second metal plate 31 is made of a flat copper plate having a thickness of 0.5 mm and is patterned into a predetermined shape. The second metal plate 31 is disposed at a position overlapping the first outer peripheral portion 22 and the second outer peripheral portion 24 of the first metal plate 20. The upper surface of the protrusion 21 and the upper surface of the second metal plate 31 are located on the same plane. The insulating substrate 30 insulates the first metal plate 20 and the second metal plate 31.
各電子部品１１は、突出部２１の上面における各延在部２２ｂ，２４ｂ寄りに搭載されている。よって、突出部２１は、各電子部品１１が搭載された搭載部２６を複数（本実施形態では４つ）有している。ここで、搭載部２６とは、突出部２１において、電子部品１１と接触しているとともに電子部品１１と熱的に結合している部位のことをいう。 Each electronic component 11 is mounted on the upper surface of the protruding portion 21 near the extending portions 22b and 24b. Therefore, the protruding portion 21 has a plurality of mounting portions 26 (four in this embodiment) on which the respective electronic components 11 are mounted. Here, the mounting portion 26 refers to a portion of the protruding portion 21 that is in contact with the electronic component 11 and is thermally coupled to the electronic component 11.
図２に示すように、突出部２１は、各電子部品１１の第１電極１１ａと電気的に接続されている。第１電極１１ａはアノード電極である。また、各電子部品１１には、第１電極１１ａとは異なる極性の第２電極１１ｂが設けられている。第２電極１１ｂはカソード電極である。第２金属板３１は、各電子部品１１の第２電極１１ｂと電気的に接続されている。 As shown in FIG. 2, the protruding portion 21 is electrically connected to the first electrode 11 a of each electronic component 11. The first electrode 11a is an anode electrode. Each electronic component 11 is provided with a second electrode 11b having a polarity different from that of the first electrode 11a. The second electrode 11b is a cathode electrode. The second metal plate 31 is electrically connected to the second electrode 11 b of each electronic component 11.
図３に示すように、第１金属板２０と放熱部材１２とは締結部材４１によって締結されている。本実施形態では、締結部材４１はボルトである。締結部材４１は、突出部２１における各延在部２２ａ，２４ａ寄りに配置されるとともに、突出部２１を貫通して放熱部材１２にねじ込まれている。 As shown in FIG. 3, the first metal plate 20 and the heat dissipation member 12 are fastened by a fastening member 41. In the present embodiment, the fastening member 41 is a bolt. The fastening member 41 is disposed near the extending portions 22 a and 24 a in the protruding portion 21 and is screwed into the heat radiating member 12 through the protruding portion 21.
第１金属板２０と放熱部材１２との間には放熱グリス２７が介在されている。放熱グリス２７としては、例えばシリコングリスが用いられる。放熱部材１２における突出部２１と重なり合う上面には座部１２ａが突設されている。さらに、放熱部材１２には座部１２ａを囲む環状溝１２ｂが形成されている。そして、第１金属板２０と放熱部材１２との間に放熱グリス２７が塗布されると、放熱グリス２７が環状溝１２ｂに流れ込む。これによれば、放熱グリス２７が環状溝１２ｂに流れ込む分、第１金属板２０と座部１２ａとの間に放熱グリス２７が流れ込んでしまうことが抑制されている。 A heat dissipation grease 27 is interposed between the first metal plate 20 and the heat dissipation member 12. As the heat radiation grease 27, for example, silicon grease is used. A seat 12a is provided on the upper surface of the heat dissipating member 12 that overlaps the protrusion 21. Further, the heat radiating member 12 is formed with an annular groove 12b surrounding the seat portion 12a. And if the thermal radiation grease 27 is apply | coated between the 1st metal plate 20 and the thermal radiation member 12, the thermal radiation grease 27 will flow into the annular groove 12b. According to this, since the heat radiation grease 27 flows into the annular groove 12b, the heat radiation grease 27 is prevented from flowing between the first metal plate 20 and the seat portion 12a.
そして、締結部材４１の締結によって第１金属板２０の下面と座部１２ａの上面とが直接接触している。よって、環状溝１２ｂは、第１金属板２０と座部１２ａとが直接面接触する部位を囲むように形成されている。 And the lower surface of the 1st metal plate 20 and the upper surface of the seat part 12a are directly contacting by fastening of the fastening member 41. FIG. Therefore, the annular groove 12b is formed so as to surround a portion where the first metal plate 20 and the seat portion 12a are in direct surface contact.
第２金属板３１を流れる電流は、放熱部材１２に電気的に接続される負荷４２に供給される。そして、放熱部材１２、座部１２ａ、第１金属板２０の突出部２１、第１電極１１ａ、第２電極１１ｂ、第２金属板３１、負荷４２を流れて放熱部材１２へ還流する電流の電流経路が確保されている。 The current flowing through the second metal plate 31 is supplied to a load 42 that is electrically connected to the heat dissipation member 12. The current of the current flowing back to the heat radiating member 12 through the heat radiating member 12, the seat 12 a, the protruding portion 21 of the first metal plate 20, the first electrode 11 a, the second electrode 11 b, the second metal plate 31, and the load 42. The route is secured.
次に、本実施形態の作用について説明する。
絶縁基板３０の線膨脹係数と第１金属板２０の線膨張係数とが異なるため、各電子部品１１から発せられる熱によって、回路基板１０ａが放熱部材１２に対して反るように変形しようとする。しかし、締結部材４１の締結によって、第１金属板２０の下面と座部１２ａの上面との接触が確保されているため、回路基板１０ａが放熱部材１２に対して反るように変形しようとしても、第１金属板２０と放熱部材１２とが電気的に接続され、電流の電流経路が確保される。その結果、電流経路において大電流（例えば１２０Ａ）を流すことが可能となっている。
Next, the operation of this embodiment will be described.
Since the linear expansion coefficient of the insulating substrate 30 is different from the linear expansion coefficient of the first metal plate 20, the circuit board 10 a tends to be deformed so as to warp against the heat radiating member 12 due to heat generated from each electronic component 11. . However, since the contact between the lower surface of the first metal plate 20 and the upper surface of the seat portion 12a is secured by the fastening of the fastening member 41, even if the circuit board 10a tries to deform so as to warp against the heat radiating member 12. The first metal plate 20 and the heat radiating member 12 are electrically connected, and a current path for current is secured. As a result, it is possible to flow a large current (for example, 120 A) in the current path.
上記実施形態では以下の効果を得ることができる。
（１）第１金属板２０と放熱部材１２とを締結部材４１によって締結し、締結部材４１の締結によって第１金属板２０の面と放熱部材１２の面とを直接接触させるようにした。これによれば、電子部品１１から発せられる熱によって、回路基板１０ａが放熱部材１２に対して反るように変形しようとしても、第１金属板２０の面と放熱部材１２の面との接触を締結部材４１の締結により確保することができる。その結果、締結部材４１によって第１金属板２０と放熱部材１２とを締結するだけで、第１金属板２０と放熱部材１２とを電気的に接続することができる。そして、放熱部材１２、第１金属板２０、第１電極１１ａ、第２電極１１ｂ、第２金属板３１、負荷４２を流れて放熱部材１２へ還流する電流の電流経路を確保することができる。その結果、電流経路において大電流を流すことができる。
In the above embodiment, the following effects can be obtained.
(1) The first metal plate 20 and the heat radiating member 12 are fastened by the fastening member 41, and the surface of the first metal plate 20 and the surface of the heat radiating member 12 are brought into direct contact by fastening of the fastening member 41. According to this, even if the circuit board 10a is deformed so as to be warped with respect to the heat radiating member 12 by the heat generated from the electronic component 11, the contact between the surface of the first metal plate 20 and the surface of the heat radiating member 12 is prevented. It can be secured by fastening the fastening member 41. As a result, the first metal plate 20 and the heat dissipation member 12 can be electrically connected only by fastening the first metal plate 20 and the heat dissipation member 12 with the fastening member 41. In addition, a current path for a current flowing through the heat dissipation member 12, the first metal plate 20, the first electrode 11 a, the second electrode 11 b, the second metal plate 31, and the load 42 and returning to the heat dissipation member 12 can be secured. As a result, a large current can flow in the current path.
（２）例えば、電子機器１０としては、絶縁基板３０の上面に、電子部品１１の第１電極１１ａと電気的に接続される第１金属板と、電子部品１１の第２電極１１ｂと電気的に接続される第２金属板とがそれぞれ所定の形状にパターニングされた状態で固定されており、絶縁基板３０の下面に放熱部材１２が固定されている構成も考えられる。この構成であると、第１金属板と放熱部材１２との間に絶縁基板３０が介在しているため、電子部品１１から発せられる熱が放熱部材１２へ放熱され難い。しかし、本実施形態では、第１金属板２０は、絶縁基板３０を介することなく放熱部材１２に熱的に結合されているため、第１金属板２０と放熱部材１２との間に絶縁基板３０が介在されている場合に比べると、電子部品１１から発せられる熱を、第１金属板２０から放熱部材１２に効率良く放熱することができる。これによって、電子部品１１の熱によって回路基板１０ａが反り難くなるため、大電流を流しやすい。 (2) For example, as the electronic device 10, the first metal plate electrically connected to the first electrode 11 a of the electronic component 11 and the second electrode 11 b of the electronic component 11 are electrically connected to the upper surface of the insulating substrate 30. It is also conceivable that the second metal plate connected to each other is fixed in a state of being patterned into a predetermined shape, and the heat dissipation member 12 is fixed to the lower surface of the insulating substrate 30. With this configuration, since the insulating substrate 30 is interposed between the first metal plate and the heat radiating member 12, the heat generated from the electronic component 11 is not easily radiated to the heat radiating member 12. However, in the present embodiment, the first metal plate 20 is thermally coupled to the heat radiating member 12 without the insulating substrate 30 interposed therebetween, so that the insulating substrate 30 is interposed between the first metal plate 20 and the heat radiating member 12. Compared with the case where the is interposed, the heat generated from the electronic component 11 can be efficiently radiated from the first metal plate 20 to the heat radiating member 12. As a result, the circuit board 10a is unlikely to warp due to the heat of the electronic component 11, and a large current is likely to flow.
（３）第１金属板２０と放熱部材１２との間に放熱グリス２７を介在した。さらに、放熱部材１２に、締結部材４１の締結によって第１金属板２０と放熱部材１２とが直接接触する部位を囲む環状溝１２ｂを形成した。これによれば、電子部品１１から発せられる熱における第１金属板２０から放熱部材１２への熱伝達を、放熱グリス２７によって促進させることができるため、電子部品１１から発せられる熱をさらに効率良く放熱することができる。また、放熱グリス２７が環状溝１２ｂに流れ込む分、第１金属板２０と放熱部材１２との間に放熱グリス２７が流れ込んでしまうことを抑制することができ、第１金属板２０と放熱部材１２とが放熱グリス２７を介することなく直接接触した状態を確保することができる。 (3) The heat dissipation grease 27 is interposed between the first metal plate 20 and the heat dissipation member 12. Furthermore, the annular groove 12b surrounding the region where the first metal plate 20 and the heat dissipation member 12 are in direct contact with each other by fastening the fastening member 41 is formed in the heat dissipation member 12. According to this, heat transfer from the first metal plate 20 to the heat radiating member 12 in the heat generated from the electronic component 11 can be promoted by the heat radiating grease 27, so that the heat generated from the electronic component 11 can be more efficiently generated. It can dissipate heat. Further, since the heat radiation grease 27 flows into the annular groove 12b, the heat radiation grease 27 can be prevented from flowing between the first metal plate 20 and the heat radiation member 12, and the first metal plate 20 and the heat radiation member 12 can be prevented. It is possible to secure a state in which they are in direct contact with each other without using the heat dissipation grease 27.
（４）放熱グリス２７は、例えば、第１金属板２０と放熱部材１２との間に、伝熱板を介在させる場合に比べると、第１金属板２０と放熱部材１２との間の隙間を埋め易い。よって、各電子部品１１から発せられる熱をさらに効率良く放熱することができる。 (4) The heat dissipation grease 27 has a gap between the first metal plate 20 and the heat dissipation member 12 as compared with, for example, a case where a heat transfer plate is interposed between the first metal plate 20 and the heat dissipation member 12. Easy to fill. Therefore, the heat generated from each electronic component 11 can be radiated more efficiently.
なお、上記実施形態は以下のように変更してもよい。
○ 実施形態において、放熱部材１２に環状溝１２ｂを形成せずに、第１金属板２０における放熱部材１２側の面において、座部１２ａを囲む位置に環状溝を形成してもよい。
In addition, you may change the said embodiment as follows.
In the embodiment, an annular groove may be formed at a position surrounding the seat portion 12 a on the surface of the first metal plate 20 on the side of the heat radiating member 12 without forming the annular groove 12 b in the heat radiating member 12.
○ 実施形態において、第１金属板２０における放熱部材１２側の面において、座部１２ａを囲む位置にも環状溝がさらに形成されていてもよい。
○ 実施形態において、環状溝１２ｂを削除してもよい。
In the embodiment, on the surface of the first metal plate 20 on the heat radiating member 12 side, an annular groove may be further formed at a position surrounding the seat portion 12a.
In the embodiment, the annular groove 12b may be deleted.
○ 実施形態において、第１金属板２０と放熱部材１２との間に、放熱グリス２７に代えて、伝熱板を介在させてもよい。
○ 実施形態において、第１金属板２０と放熱部材１２との間に放熱グリス２７を介在させなくてもよく、第１金属板２０と放熱部材１２とが直接接触していてもよい。
In the embodiment, a heat transfer plate may be interposed between the first metal plate 20 and the heat dissipation member 12 instead of the heat dissipation grease 27.
In the embodiment, the heat dissipating grease 27 may not be interposed between the first metal plate 20 and the heat radiating member 12, and the first metal plate 20 and the heat radiating member 12 may be in direct contact with each other.
○ 実施形態において、電子機器１０は、絶縁基板３０の上面に、電子部品１１の第１電極１１ａと電気的に接続される第１金属板と、電子部品１１の第２電極１１ｂと電気的に接続される第２金属板とがそれぞれ所定の形状にパターニングされた状態で固定されており、絶縁基板３０の下面に放熱部材１２が固定されている構成であってもよい。この場合、絶縁基板３０に貫通孔を形成するとともに、放熱部材１２に、貫通孔を通過可能なボス部を延設し、ボス部を第１金属板に接触させる。そして、ボス部に締結部材４１をねじ込むことで、第１金属板と放熱部材１２とを締結するとともに、締結部材４１の締結によって、第１金属板の面とボス部の面とを直接接触させるようにする。 In the embodiment, the electronic device 10 is electrically connected to the upper surface of the insulating substrate 30 with the first metal plate electrically connected to the first electrode 11a of the electronic component 11 and the second electrode 11b of the electronic component 11. The second metal plate to be connected may be fixed in a state of being patterned into a predetermined shape, and the heat dissipation member 12 may be fixed to the lower surface of the insulating substrate 30. In this case, a through hole is formed in the insulating substrate 30, and a boss portion that can pass through the through hole is extended to the heat radiating member 12, and the boss portion is brought into contact with the first metal plate. Then, by screwing the fastening member 41 into the boss portion, the first metal plate and the heat dissipation member 12 are fastened, and the surface of the first metal plate and the surface of the boss portion are brought into direct contact by fastening of the fastening member 41. Like that.
○ 実施形態において、第１金属板２０及び第２金属板３１の厚みや材質等は特に限定されるものではない。例えば、第１金属板２０及び第２金属板３１が、アルミニウム等の導電性金属材料により形成されていてもよい。 In the embodiment, the thickness and material of the first metal plate 20 and the second metal plate 31 are not particularly limited. For example, the first metal plate 20 and the second metal plate 31 may be formed of a conductive metal material such as aluminum.
○ 実施形態において、例えば、主成分に液体金属やセラミック等を用いた放熱グリスを用いてもよい。
○ 実施形態において、放熱部材１２は、アルミニウム以外の導電性材料により形成されていてもよい。要は、放熱部材１２は導電部材であればよい。
In the embodiment, for example, heat dissipation grease using a liquid metal, ceramic, or the like as a main component may be used.
In the embodiment, the heat radiating member 12 may be formed of a conductive material other than aluminum. In short, the heat dissipation member 12 may be a conductive member.
○ 実施形態において、締結部材４１として、ボルト以外のものを用いてもよい。要は、締結部材４１は、第１金属板２０と放熱部材１２とを締結できるものであればよい。
○ 実施形態において、電子部品１１の数は特に限定されるものではない。
In the embodiment, a fastening member 41 other than a bolt may be used. In short, the fastening member 41 may be any member that can fasten the first metal plate 20 and the heat dissipation member 12.
In the embodiment, the number of electronic components 11 is not particularly limited.
次に、上記実施形態及び別例から把握できる技術的思想について以下に追記する。
（イ）前記第１金属板及び前記第２金属板は銅板により形成されている。
（ロ）前記導電部材はアルミニウムにより形成されている。
Next, the technical idea that can be grasped from the above embodiment and other examples will be described below.
(A) The first metal plate and the second metal plate are formed of a copper plate.
(B) The conductive member is made of aluminum.
１０…電子機器、１０ａ…回路基板、１１…電子部品、１１ａ…第１電極、１１ｂ…第２電極、１２…導電部材としての放熱部材、１２ｂ…環状溝、２０…第１金属板、２１…突出部、２６…搭載部、２７…放熱グリス、３０…絶縁基板、３０ｈ…貫通孔、３１…第２金属板、４１…締結部材、４２…負荷。 DESCRIPTION OF SYMBOLS 10 ... Electronic device, 10a ... Circuit board, 11 ... Electronic component, 11a ... 1st electrode, 11b ... 2nd electrode, 12 ... Heat dissipation member as a conductive member, 12b ... Annular groove, 20 ... 1st metal plate, 21 ... Projection part, 26 ... mounting part, 27 ... heat dissipation grease, 30 ... insulating substrate, 30h ... through hole, 31 ... second metal plate, 41 ... fastening member, 42 ... load.
Claims (3)
前記電子部品における前記第１電極とは異なる極性の第２電極と電気的に接続される第２金属板と、
前記第１金属板と前記第２金属板とを絶縁する絶縁基板と、を有する回路基板を備え、
グランドに接続される導電部材を有し、
前記第２金属板を流れる電流を、前記導電部材に電気的に接続される負荷へ供給する電子機器であって、
前記絶縁基板は、前記第１金属板に積層され、前記絶縁基板には貫通孔が形成されており、
前記第１金属板には、前記貫通孔に対応する部分に前記電子部品が搭載されており、
前記第１金属板と前記導電部材とは締結部材によって締結され、
前記締結部材の締結によって前記第１金属板の前記貫通孔に対応する部分の下面と前記導電部材の面とが前記絶縁基板を介することなく直接接触していることを特徴とする電子機器。 A first metal plate electrically connected to the first electrode of the electronic component;
A second metal plate electrically connected to a second electrode having a polarity different from that of the first electrode in the electronic component;
An insulating substrate that insulates the first metal plate and the second metal plate;
A conductive member connected to the ground;
An electronic device for supplying a current flowing through the second metal plate to a load electrically connected to the conductive member,
The insulating substrate is laminated on the first metal plate, and a through hole is formed in the insulating substrate,
The electronic component is mounted on the first metal plate in a portion corresponding to the through hole,
The first metal plate and the conductive member are fastened by a fastening member,
An electronic apparatus, characterized in that directly contact without the lower surface and the surface of the conductive member portions corresponding to the through hole of the first metal plate by a fastening of the fastening member through said insulating substrate.
前記第１金属板は、前記絶縁基板の第１面に接着される接着部位と、前記貫通孔を通過して前記絶縁基板の第１面とは反対側の面である第２面よりも突出するとともに前記電子部品が搭載される搭載部を有する突出部と、を有し、
前記第２金属板は、前記絶縁基板の第２面に接着されており、
前記第１金属板は、前記絶縁基板を介することなく前記導電部材に熱的に結合されていることを特徴とする請求項１に記載の電子機器。 A through hole is formed in the insulating substrate,
The first metal plate protrudes from an adhesive part bonded to the first surface of the insulating substrate and a second surface that is a surface opposite to the first surface of the insulating substrate through the through hole. And a protrusion having a mounting portion on which the electronic component is mounted,
The second metal plate is bonded to the second surface of the insulating substrate;
The electronic apparatus according to claim 1, wherein the first metal plate is thermally coupled to the conductive member without the insulating substrate interposed therebetween.
前記第１金属板及び前記導電部材の少なくとも一方には、前記締結部材の締結によって前記第１金属板と前記導電部材とが直接接触する部位を囲む環状溝が形成されていることを特徴とする請求項２に記載の電子機器。 Heat dissipation grease is interposed between the first metal plate and the conductive member,
At least one of the first metal plate and the conductive member is formed with an annular groove surrounding a portion where the first metal plate and the conductive member are in direct contact with each other by fastening of the fastening member. The electronic device according to claim 2.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013269558A JP5780289B2 (en) | 2013-12-26 | 2013-12-26 | Electronics |
| PCT/JP2014/082570 WO2015098499A1 (en) | 2013-12-26 | 2014-12-09 | Electronic apparatus |
| TW103144896A TW201532506A (en) | 2013-12-26 | 2014-12-23 | Electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013269558A JP5780289B2 (en) | 2013-12-26 | 2013-12-26 | Electronics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015126105A JP2015126105A (en) | 2015-07-06 |
| JP5780289B2 true JP5780289B2 (en) | 2015-09-16 |
Family
ID=53478364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013269558A Active JP5780289B2 (en) | 2013-12-26 | 2013-12-26 | Electronics |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5780289B2 (en) |
| TW (1) | TW201532506A (en) |
| WO (1) | WO2015098499A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7077764B2 (en) | 2018-05-17 | 2022-05-31 | 株式会社オートネットワーク技術研究所 | Circuit equipment |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07161925A (en) * | 1993-12-09 | 1995-06-23 | Mitsubishi Electric Corp | Power module |
| JPH09307198A (en) * | 1996-05-10 | 1997-11-28 | Ibiden Co Ltd | Electronic component mounting substrate |
| US6829148B2 (en) * | 2001-09-14 | 2004-12-07 | Honeywell International Inc. | Apparatus and method for providing a ground reference potential |
| JP2003243584A (en) * | 2002-02-15 | 2003-08-29 | Mitsubishi Electric Corp | Semiconductor device |
| JP2004179463A (en) * | 2002-11-28 | 2004-06-24 | Hitachi Kokusai Electric Inc | Substrate packaging structure |
| JP4770518B2 (en) * | 2006-03-01 | 2011-09-14 | 日本電気株式会社 | High power amplifier |
| US20110294440A1 (en) * | 2007-09-21 | 2011-12-01 | Tooru Ishino | High power amplifier, wireless transmitter, wireless transceiver, and method for mounting high power amplifier |
| ES2345118T3 (en) * | 2007-09-28 | 2010-09-15 | EBERSPACHER CONTROLS GMBH & CO. KG | DRIVING BAR WITH HEAT ELIMINATION. |
| WO2013054416A1 (en) * | 2011-10-13 | 2013-04-18 | トヨタ自動車株式会社 | Semiconductor module |
| JP5609944B2 (en) * | 2012-10-12 | 2014-10-22 | ダイキン工業株式会社 | module |
-
2013
- 2013-12-26 JP JP2013269558A patent/JP5780289B2/en active Active
-
2014
- 2014-12-09 WO PCT/JP2014/082570 patent/WO2015098499A1/en active Application Filing
- 2014-12-23 TW TW103144896A patent/TW201532506A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015098499A1 (en) | 2015-07-02 |
| TW201532506A (en) | 2015-08-16 |
| JP2015126105A (en) | 2015-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5641230B2 (en) | Electronics | |
| JP6380037B2 (en) | Semiconductor device and electronic component using the same | |
| JP7111010B2 (en) | inverter | |
| JP6477373B2 (en) | Circuit assembly and electrical junction box | |
| US20220148946A1 (en) | Semiconductor device | |
| JP6241660B2 (en) | Power storage module | |
| JP5780289B2 (en) | Electronics | |
| JP2017004999A (en) | Thermistor mounting device and thermistor component | |
| WO2017059619A1 (en) | Micro surface-mount rectification semiconductor device | |
| WO2015098498A1 (en) | Electronic apparatus | |
| JP5423005B2 (en) | Electronics | |
| JP6500210B2 (en) | Metal plate resistor | |
| JP7088124B2 (en) | Semiconductor device | |
| JP2014120549A (en) | Insulation heat radiation substrate and circuit module using the same | |
| JP5621812B2 (en) | Semiconductor device | |
| JP2017204589A (en) | Heat dissipation chip and heat dissipation structure | |
| JP2013004912A (en) | Semiconductor module | |
| JP5682511B2 (en) | Semiconductor module | |
| JP4342432B2 (en) | Electric circuit device and cooling structure in electric circuit device | |
| JP5751052B2 (en) | Heat dissipation board, semiconductor module | |
| KR101507568B1 (en) | Heat sink | |
| JP7215402B2 (en) | semiconductor equipment | |
| JP6060053B2 (en) | Power semiconductor device | |
| JP4961215B2 (en) | Power device device | |
| JP6079558B2 (en) | Circuit structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150410 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150616 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150629 |
|
| R151 | Written notification of patent or utility model registration |
Ref document number: 5780289 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |