JP5775586B2 - 太陽電池及びこれを含む太陽電池モジュール - Google Patents
太陽電池及びこれを含む太陽電池モジュール Download PDFInfo
- Publication number
- JP5775586B2 JP5775586B2 JP2013526988A JP2013526988A JP5775586B2 JP 5775586 B2 JP5775586 B2 JP 5775586B2 JP 2013526988 A JP2013526988 A JP 2013526988A JP 2013526988 A JP2013526988 A JP 2013526988A JP 5775586 B2 JP5775586 B2 JP 5775586B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- extension
- solar cell
- light absorption
- absorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 230000031700 light absorption Effects 0.000 claims description 29
- 239000004020 conductor Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 7
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (8)
- 互いに反対になる第1面及び第2面を備える支持基板と、
前記第1面側に位置し、第1電極、光吸収層、及び第2電極を含む光電変換部と、
前記第1電極に連結され、前記第2面側に位置する集電電極と、
を含み、
前記第1電極は、前記基板の第1面に位置する電極部と、前記第1面から前記第2面に延びて前記第2面に位置する延長部を含み、
前記集電電極は、前記延長部に接触形成され、
前記第1電極の電極部の上には光吸収層が配置され、前記光吸収層の上に第2電極が配置され、
前記光吸収層は、前記第1電極の電極部と前記第2電極との間に配置され、
前記第1電極は、モリブデン、銅、ニッケル、アルミニウム及びこれらの合金のうち、少なくとも一つからなることを特徴とする、太陽電池。 - 前記延長部は、前記第1面から前記支持基板の側面を覆いかぶせながら前記第2面まで延びることを特徴とする、請求項1に記載の太陽電池。
- 前記第2電極は、透光性伝導性物質で形成され、
前記第1電極、前記光吸収層、及び前記第2電極が前記支持基板の前記第1面の上に順次に積層されることを特徴とする、請求項1に記載の太陽電池。 - 前記延長部は、前記第1電極の電極部の一側から延びる第1延長部と、前記第1電極の電極部の他側から延びて前記第2面で前記第1延長部と隔離する第2延長部を含み、
前記集電電極は、前記第1延長部に接触形成される第1集電電極及び前記第2延長部に接触形成される第2集電電極を含むことを特徴とする、請求項1に記載の太陽電池。 - 前記第1延長部と前記第2延長部は、60μm以上離隔し
前記第1延長部と前記第2延長部は、各々突出部を含み、
前記第1延長部の突出部と前記第2延長部の突出部は、互いに交互に配置されることを特徴とする、請求項4に記載の太陽電池。 - 前記光電変換部は互いに直列に連結される複数の光電変換部を含んで前記第1電極の電極部、前記光吸収層、及び前記第2電極が複数に備えられ、
前記第1延長部は前記第2電極とコンタクトパターンを通じて連結されない前記第1電極の電極部から延びて、前記第2延長部は前記第2電極とコンタクトパターンを通じて連結された前記第1電極の電極部から延びることを特徴とする、請求項5に記載の太陽電池。 - 互いに反対になる第1面及び第2面を備える支持基板、前記第1面側に位置し、第1電極、光吸収層、及び第2電極を含む光電変換部、及び前記第1電極に電気的に連結され、前記第2面側に位置する集電電極を含む太陽電池と、
前記支持基板の前記第2面に位置するジャンクションボックスと、
を含み、
前記第1電極は、前記基板の第1面に位置する電極部と、前記第1面から前記第2面に延びて前記第2面に位置する延長部を含み、
前記集電電極は、前記延長部に接触形成され、
前記第1電極の電極部の上には光吸収層が配置され、前記光吸収層の上に第2電極が配置され、
前記光吸収層は、前記第1電極の電極部と前記第2電極との間に配置され、
前記第1電極は、モリブデン、銅、ニッケル、アルミニウム及びこれらの合金のうち、少なくとも一つからなることを特徴とする、太陽電池モジュール。 - 前記第2電極は、透光性伝導性物質で形成され、
前記延長部は、前記第1面から前記支持基板の側面を覆いかぶせながら前記第2面まで延びることを特徴とする、請求項7に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0085582 | 2010-09-01 | ||
KR1020100085582A KR101154718B1 (ko) | 2010-09-01 | 2010-09-01 | 태양 전지 및 이를 포함하는 태양 전지 모듈 |
PCT/KR2011/003122 WO2012030047A1 (ko) | 2010-09-01 | 2011-04-27 | 태양 전지 및 이를 포함하는 태양 전지 모듈 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013536997A JP2013536997A (ja) | 2013-09-26 |
JP2013536997A5 JP2013536997A5 (ja) | 2014-07-17 |
JP5775586B2 true JP5775586B2 (ja) | 2015-09-09 |
Family
ID=45773086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013526988A Expired - Fee Related JP5775586B2 (ja) | 2010-09-01 | 2011-04-27 | 太陽電池及びこれを含む太陽電池モジュール |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2610921B1 (ja) |
JP (1) | JP5775586B2 (ja) |
KR (1) | KR101154718B1 (ja) |
CN (1) | CN103053030B (ja) |
WO (1) | WO2012030047A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114759101B (zh) * | 2020-12-29 | 2023-08-01 | 隆基绿能科技股份有限公司 | 一种热载流子太阳能电池及光伏组件 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61163671A (ja) * | 1985-01-16 | 1986-07-24 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池 |
JP2992638B2 (ja) * | 1995-06-28 | 1999-12-20 | キヤノン株式会社 | 光起電力素子の電極構造及び製造方法並びに太陽電池 |
JP3551787B2 (ja) * | 1998-10-14 | 2004-08-11 | 富士電機アドバンストテクノロジー株式会社 | 太陽電池モジュールおよびその製造方法 |
JP2004079752A (ja) * | 2002-08-16 | 2004-03-11 | Rikogaku Shinkokai | テープ状太陽電池 |
JP4798956B2 (ja) | 2004-03-29 | 2011-10-19 | 京セラ株式会社 | 太陽電池モジュールおよびそれを用いた太陽光発電装置 |
JP2006216608A (ja) * | 2005-02-01 | 2006-08-17 | Honda Motor Co Ltd | 太陽電池モジュール |
JP2009065022A (ja) * | 2007-09-07 | 2009-03-26 | Fuji Electric Systems Co Ltd | 薄膜太陽電池及びその製造方法 |
WO2009097588A2 (en) * | 2008-01-30 | 2009-08-06 | Xunlight Corporation | Series interconnected thin-film photovoltaic module and method for preparation thereof |
WO2009112503A1 (en) * | 2008-03-11 | 2009-09-17 | Shell Erneuerbare Energien Gmbh | Solar module |
-
2010
- 2010-09-01 KR KR1020100085582A patent/KR101154718B1/ko active IP Right Grant
-
2011
- 2011-04-27 JP JP2013526988A patent/JP5775586B2/ja not_active Expired - Fee Related
- 2011-04-27 CN CN201180037775.0A patent/CN103053030B/zh not_active Expired - Fee Related
- 2011-04-27 EP EP11822022.7A patent/EP2610921B1/en active Active
- 2011-04-27 WO PCT/KR2011/003122 patent/WO2012030047A1/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN103053030B (zh) | 2016-04-27 |
EP2610921A4 (en) | 2018-01-03 |
EP2610921B1 (en) | 2019-11-20 |
WO2012030047A1 (ko) | 2012-03-08 |
KR20120022229A (ko) | 2012-03-12 |
KR101154718B1 (ko) | 2012-06-08 |
EP2610921A1 (en) | 2013-07-03 |
JP2013536997A (ja) | 2013-09-26 |
CN103053030A (zh) | 2013-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100999797B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR20110107171A (ko) | 태양광 발전장치 및 이의 제조방법 | |
US10249770B2 (en) | Solar cell module | |
JP2013537364A (ja) | 太陽光発電装置及びその製造方法 | |
KR101283072B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR20120045633A (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR20130109330A (ko) | 태양전지 및 이의 제조 방법 | |
KR20120012325A (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101114079B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101626929B1 (ko) | 화합물 박막을 이용한 다중접합 태양전지 제조 방법 및 다중접합 태양전지 | |
KR20120119807A (ko) | 태양 전지 | |
KR101382880B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101338610B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
JP5775586B2 (ja) | 太陽電池及びこれを含む太陽電池モジュール | |
KR101173419B1 (ko) | 태양전지 및 이의 제조방법 | |
KR101172186B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101055019B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101091359B1 (ko) | 태양전지 및 이의 제조방법 | |
KR101349429B1 (ko) | 태양광 발전장치 | |
KR101272997B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101273186B1 (ko) | 태양광 발전장치 | |
KR20130059976A (ko) | 태양전지 및 이의 제조방법 | |
KR20130036642A (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101210162B1 (ko) | 태양광 발전장치 및 이의 제조방법 | |
KR101349525B1 (ko) | 태양광 발전장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140428 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141118 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141119 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150609 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150703 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5775586 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |