JP5769877B2 - ダイヤモンドセンサ、検出器及び量子装置 - Google Patents

ダイヤモンドセンサ、検出器及び量子装置 Download PDF

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JP5769877B2
JP5769877B2 JP2014509687A JP2014509687A JP5769877B2 JP 5769877 B2 JP5769877 B2 JP 5769877B2 JP 2014509687 A JP2014509687 A JP 2014509687A JP 2014509687 A JP2014509687 A JP 2014509687A JP 5769877 B2 JP5769877 B2 JP 5769877B2
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single crystal
diamond material
defects
cvd diamond
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JP2014522364A (ja
JP2014522364A5 (enExample
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ダニエル ジェイムズ トゥウィッチェン
ダニエル ジェイムズ トゥウィッチェン
マシュー リー マーカム
マシュー リー マーカム
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エレメント シックス リミテッド
エレメント シックス リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014509687A 2011-05-10 2012-05-04 ダイヤモンドセンサ、検出器及び量子装置 Active JP5769877B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161484550P 2011-05-10 2011-05-10
US61/484,550 2011-05-10
GB1107730.2 2011-05-10
GBGB1107730.2A GB201107730D0 (en) 2011-05-10 2011-05-10 Diamond sensors, detectors and quantum devices
PCT/EP2012/058231 WO2012152685A1 (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices

Publications (3)

Publication Number Publication Date
JP2014522364A JP2014522364A (ja) 2014-09-04
JP2014522364A5 JP2014522364A5 (enExample) 2015-04-30
JP5769877B2 true JP5769877B2 (ja) 2015-08-26

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JP2014509687A Active JP5769877B2 (ja) 2011-05-10 2012-05-04 ダイヤモンドセンサ、検出器及び量子装置

Country Status (6)

Country Link
US (1) US8686377B2 (enExample)
EP (1) EP2707523B1 (enExample)
JP (1) JP5769877B2 (enExample)
CN (1) CN103620093B9 (enExample)
GB (2) GB201107730D0 (enExample)
WO (1) WO2012152685A1 (enExample)

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US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
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US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
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JP6795803B2 (ja) 2018-03-02 2020-12-02 国立大学法人京都大学 センサ素子、測定装置、センサ素子の製造方法、電子回路素子、および量子情報素子
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Also Published As

Publication number Publication date
US8686377B2 (en) 2014-04-01
GB201107730D0 (en) 2011-06-22
CN103620093B (zh) 2016-02-24
GB2493236B (en) 2015-07-29
JP2014522364A (ja) 2014-09-04
GB2493236A (en) 2013-01-30
CN103620093B9 (zh) 2016-08-10
CN103620093A (zh) 2014-03-05
US20140061510A1 (en) 2014-03-06
EP2707523A1 (en) 2014-03-19
EP2707523B1 (en) 2015-01-14
WO2012152685A1 (en) 2012-11-15
GB201207846D0 (en) 2012-06-20
GB2493236C (en) 2019-02-27

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