GB201107730D0 - Diamond sensors, detectors and quantum devices - Google Patents

Diamond sensors, detectors and quantum devices

Info

Publication number
GB201107730D0
GB201107730D0 GBGB1107730.2A GB201107730A GB201107730D0 GB 201107730 D0 GB201107730 D0 GB 201107730D0 GB 201107730 A GB201107730 A GB 201107730A GB 201107730 D0 GB201107730 D0 GB 201107730D0
Authority
GB
United Kingdom
Prior art keywords
detectors
quantum devices
diamond sensors
diamond
sensors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1107730.2A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Priority to GBGB1107730.2A priority Critical patent/GB201107730D0/en
Publication of GB201107730D0 publication Critical patent/GB201107730D0/en
Priority to GB1207846.5A priority patent/GB2493236C/en
Priority to US14/115,031 priority patent/US8686377B2/en
Priority to PCT/EP2012/058231 priority patent/WO2012152685A1/en
Priority to CN201280030089.5A priority patent/CN103620093B9/zh
Priority to EP12719687.1A priority patent/EP2707523B1/en
Priority to JP2014509687A priority patent/JP5769877B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
GBGB1107730.2A 2011-05-10 2011-05-10 Diamond sensors, detectors and quantum devices Ceased GB201107730D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB1107730.2A GB201107730D0 (en) 2011-05-10 2011-05-10 Diamond sensors, detectors and quantum devices
GB1207846.5A GB2493236C (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices
US14/115,031 US8686377B2 (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices
PCT/EP2012/058231 WO2012152685A1 (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices
CN201280030089.5A CN103620093B9 (zh) 2011-05-10 2012-05-04 金刚石传感器、探测器和量子装置
EP12719687.1A EP2707523B1 (en) 2011-05-10 2012-05-04 Single crystal cvd diamond and devices
JP2014509687A JP5769877B2 (ja) 2011-05-10 2012-05-04 ダイヤモンドセンサ、検出器及び量子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1107730.2A GB201107730D0 (en) 2011-05-10 2011-05-10 Diamond sensors, detectors and quantum devices

Publications (1)

Publication Number Publication Date
GB201107730D0 true GB201107730D0 (en) 2011-06-22

Family

ID=44243844

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1107730.2A Ceased GB201107730D0 (en) 2011-05-10 2011-05-10 Diamond sensors, detectors and quantum devices
GB1207846.5A Expired - Fee Related GB2493236C (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1207846.5A Expired - Fee Related GB2493236C (en) 2011-05-10 2012-05-04 Diamond sensors, detectors, and quantum devices

Country Status (6)

Country Link
US (1) US8686377B2 (enExample)
EP (1) EP2707523B1 (enExample)
JP (1) JP5769877B2 (enExample)
CN (1) CN103620093B9 (enExample)
GB (2) GB201107730D0 (enExample)
WO (1) WO2012152685A1 (enExample)

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US9245551B2 (en) 2014-03-18 2016-01-26 Seagate Technology Llc Nitrogen-vacancy nanocrystal magnetic source sensor
US10012704B2 (en) 2015-11-04 2018-07-03 Lockheed Martin Corporation Magnetic low-pass filter
US10520558B2 (en) 2016-01-21 2019-12-31 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with nitrogen-vacancy center diamond located between dual RF sources
US9823313B2 (en) 2016-01-21 2017-11-21 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with circuitry on diamond
US10168393B2 (en) 2014-09-25 2019-01-01 Lockheed Martin Corporation Micro-vacancy center device
US9835693B2 (en) 2016-01-21 2017-12-05 Lockheed Martin Corporation Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control
US9829545B2 (en) 2015-11-20 2017-11-28 Lockheed Martin Corporation Apparatus and method for hypersensitivity detection of magnetic field
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BR112017016261A2 (pt) 2015-01-28 2018-03-27 Lockheed Martin Corporation carga de energia in situ
GB2550809A (en) 2015-02-04 2017-11-29 Lockheed Corp Apparatus and method for estimating absolute axes' orientations for a magnetic detection system
GB2551090A (en) * 2015-02-04 2017-12-06 Lockheed Corp Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
AU2015230816B2 (en) * 2015-07-28 2021-07-15 Royal Melbourne Institute Of Technology A sensor for measuring an external magnetic field
US10495698B2 (en) 2015-07-28 2019-12-03 Royal Melbourne Institute Of Technology Magneto-encephalography device
WO2017087013A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for closed loop processing for a magnetic detection system
WO2017095454A1 (en) 2015-12-01 2017-06-08 Lockheed Martin Corporation Communication via a magnio
GB201522650D0 (en) 2015-12-22 2016-02-03 Element Six Technologies Ltd Nitrogen containing single crystal diamond materials optimized for magnetometr applications
WO2017123261A1 (en) 2016-01-12 2017-07-20 Lockheed Martin Corporation Defect detector for conductive materials
WO2017127098A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensed ferro-fluid hydrophone
GB2562958A (en) 2016-01-21 2018-11-28 Lockheed Corp Magnetometer with a light emitting diode
WO2017127079A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Ac vector magnetic anomaly detection with diamond nitrogen vacancies
WO2017127095A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common rf and magnetic fields generator
WO2018052497A2 (en) 2016-05-25 2018-03-22 President And Fellows Of Harvard College Synchronized-readout for narrowband detection of time-varying electromagnetic fields using solid state spins
US10371765B2 (en) 2016-07-11 2019-08-06 Lockheed Martin Corporation Geolocation of magnetic sources using vector magnetometer sensors
US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
US10345395B2 (en) 2016-12-12 2019-07-09 Lockheed Martin Corporation Vector magnetometry localization of subsurface liquids
US10281550B2 (en) 2016-11-14 2019-05-07 Lockheed Martin Corporation Spin relaxometry based molecular sequencing
US10408890B2 (en) 2017-03-24 2019-09-10 Lockheed Martin Corporation Pulsed RF methods for optimization of CW measurements
US10571530B2 (en) 2016-05-31 2020-02-25 Lockheed Martin Corporation Buoy array of magnetometers
US10330744B2 (en) 2017-03-24 2019-06-25 Lockheed Martin Corporation Magnetometer with a waveguide
US10274550B2 (en) 2017-03-24 2019-04-30 Lockheed Martin Corporation High speed sequential cancellation for pulsed mode
US10228429B2 (en) 2017-03-24 2019-03-12 Lockheed Martin Corporation Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing
US10677953B2 (en) 2016-05-31 2020-06-09 Lockheed Martin Corporation Magneto-optical detecting apparatus and methods
US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
US10345396B2 (en) 2016-05-31 2019-07-09 Lockheed Martin Corporation Selected volume continuous illumination magnetometer
US10338163B2 (en) 2016-07-11 2019-07-02 Lockheed Martin Corporation Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation
US10359479B2 (en) 2017-02-20 2019-07-23 Lockheed Martin Corporation Efficient thermal drift compensation in DNV vector magnetometry
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10317279B2 (en) 2016-05-31 2019-06-11 Lockheed Martin Corporation Optical filtration system for diamond material with nitrogen vacancy centers
US10545200B2 (en) 2016-06-06 2020-01-28 President And Fellows Of Harvard College Simultaneous vector magnetometry with nitrogen vacancy centers in diamond or other solid-state spin sensors
US10910004B2 (en) * 2016-09-02 2021-02-02 Mmi Technologies Pte Ltd. Disk drive suspension baseplate having enhanced torque retention and method of manufacture
RU2661442C2 (ru) * 2016-11-28 2018-07-16 Общество С Ограниченной Ответственностью "Сенсор Спин Технолоджис" Гироскоп на nv-центрах в алмазе
US10983184B2 (en) * 2016-12-22 2021-04-20 The Regents Of The University Of California Specialized diamond materials for NMR applications
EP3376245A1 (en) * 2017-03-16 2018-09-19 ETH Zurich Scanning sensor comprising a spin defect
US10379174B2 (en) 2017-03-24 2019-08-13 Lockheed Martin Corporation Bias magnet array for magnetometer
US10371760B2 (en) 2017-03-24 2019-08-06 Lockheed Martin Corporation Standing-wave radio frequency exciter
US10338164B2 (en) 2017-03-24 2019-07-02 Lockheed Martin Corporation Vacancy center material with highly efficient RF excitation
US10459041B2 (en) 2017-03-24 2019-10-29 Lockheed Martin Corporation Magnetic detection system with highly integrated diamond nitrogen vacancy sensor
WO2018226784A2 (en) 2017-06-06 2018-12-13 President And Fellows Of Harvard College Order of magnitude improvement in t*2 via control and cancellation of spin bath induced dephasing in solid-state ensembles
CN107807315B (zh) * 2017-10-31 2023-12-19 国网安徽省电力公司电力科学研究院 用于检测电气设备的绝缘缺陷的方法
JP6795803B2 (ja) 2018-03-02 2020-12-02 国立大学法人京都大学 センサ素子、測定装置、センサ素子の製造方法、電子回路素子、および量子情報素子
DE102018203845A1 (de) * 2018-03-14 2019-09-19 Robert Bosch Gmbh Verfahren und Vorrichtung zum Messen einer Magnetfeldrichtung
JPWO2019177092A1 (ja) * 2018-03-16 2021-03-25 アダマンド並木精密宝石株式会社 ダイヤモンド結晶の研磨方法とダイヤモンド結晶
EP3814558A1 (en) 2018-05-08 2021-05-05 M7D Corporation Diamond materials comprising multiple cvd grown, small grain diamonds, in a single crystal diamond matrix
GB201904435D0 (en) * 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
DE102019117423A1 (de) * 2019-06-27 2020-12-31 Universität Leipzig Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht
WO2021011765A1 (en) 2019-07-17 2021-01-21 President And Fellows Of Harvard College Nanophotonic quantum memory
CN112688160A (zh) * 2020-12-24 2021-04-20 南方科技大学 一种宽禁带半导体器件及其制备方法、探测器和调制器
GB2614218B (en) * 2021-07-06 2024-06-19 Element Six Tech Ltd Single crystal diamond component and method for producing
KR102765079B1 (ko) * 2021-09-17 2025-02-06 울산과학기술원 고체 큐빗 이미징 장치
KR102709221B1 (ko) * 2021-12-17 2024-09-25 한국과학기술연구원 단일 광자 광원을 이용한 표면 기능화 방법
WO2024176584A1 (ja) * 2023-02-24 2024-08-29 国立研究開発法人量子科学技術研究開発機構 窒素－空孔複合欠陥を有する材料の製造方法、製造装置、製造プログラム、及び窒素－空孔複合欠陥を有する材料
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GB2383588B (en) 2000-06-15 2004-05-05 Element Six Single crystal diamond prepared by CVD
CZ302229B6 (cs) 2000-06-15 2011-01-05 Element Six (Pty) Ltd Silná monokrystalová diamantová vrstva, zpusob jejího zhotovení a drahokamy vyrábené z této vrstvy
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GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material

Also Published As

Publication number Publication date
GB2493236A (en) 2013-01-30
EP2707523A1 (en) 2014-03-19
GB2493236B (en) 2015-07-29
GB201207846D0 (en) 2012-06-20
JP2014522364A (ja) 2014-09-04
GB2493236C (en) 2019-02-27
CN103620093B9 (zh) 2016-08-10
US20140061510A1 (en) 2014-03-06
EP2707523B1 (en) 2015-01-14
US8686377B2 (en) 2014-04-01
JP5769877B2 (ja) 2015-08-26
CN103620093B (zh) 2016-02-24
WO2012152685A1 (en) 2012-11-15
CN103620093A (zh) 2014-03-05

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Legal Events

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AT Applications terminated before publication under section 16(1)