JP5768890B2 - Plasma deposition system - Google Patents

Description

  The present invention relates to a plasma film forming apparatus for forming a film by forming plasma.

  In the manufacturing process of semiconductor devices, a plasma film forming apparatus is used in the film forming process because of the advantage that high-precision process control is easy. For example, a plasma chemical vapor deposition (CVD) apparatus is known as a plasma film forming apparatus.

  In the plasma CVD apparatus, the source gas is turned into plasma by high frequency power or the like, and a thin film is formed on the substrate by a chemical reaction. There has been proposed a plasma CVD apparatus in which a plurality of electrode plates are prepared and a processing capacity is improved by arranging a substrate on each electrode plate (see, for example, Patent Document 1).

International Publication No. 02/20871 Pamphlet

  In order to form a film uniformly and with high film formation efficiency on all the substrates in the chamber, a method using a shower electrode for supplying a process gas from the inside of the electrode is employed. However, in order to eject the process gas uniformly from the shower electrode, the process gas needs to be uniformly dispersed inside the electrode. Particularly when the substrates are respectively mounted on a plurality of electrodes, it is necessary to make the shower electrodes large in order to achieve uniform dispersion. As a result, there has been a problem that the plasma film forming apparatus is increased in size.

  In view of the above problems, an object of the present invention is to provide a plasma film forming apparatus capable of efficiently forming a uniform film on a substrate and suppressing an increase in size.

According to one aspect of the present invention, (a) a chamber into which a substrate holder having a plurality of substrate mounting plates that are spaced apart from each other and arranged in parallel is defined as a main surface on which a substrate is mounted. And (b) a plurality of through-holes each having an opening provided on two main surfaces facing each other, and a mounting surface extending in the vertical direction in the chamber and the two main surfaces are opposed to each other. A plurality of cathode electrodes respectively disposed between a plurality of substrate mounting plates , (c) a gas supply device for introducing a process gas between the substrate holder and the cathode electrode in the chamber, and (d) between the substrate holder and the cathode electrode ho supplies AC power, and a AC power source to the process gas into a plasma state between the substrate holder and the cathode electrode, resulting in a plurality of through holes By a multi-hollow discharge occurring two main surfaces of the cathode electrodes Together, Kasodo discharge, plasma deposition apparatus for forming a film on the basis of raw material contained in the process gas on a substrate is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the plasma film-forming apparatus which can form a uniform film | membrane efficiently on a board | substrate and suppressed the enlargement can be provided.

It is a schematic diagram which shows the structure of the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows the example of the substrate holder used for the plasma film-forming apparatus which concerns on embodiment of this invention. It is a typical structure figure showing an example of a cathode electrode of a plasma film-forming device concerning an embodiment of the present invention. It is a typical structure figure showing an example of a cathode electrode of a comparative example. It is a schematic diagram which shows the example of the cathode electrode of the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram for demonstrating the introduction method of the process gas in the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram for demonstrating the arrangement method of the gas supply nozzle in the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram for demonstrating the mounting method of the board | substrate in the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows the example of a shape of the gas supply nozzle of the plasma film-forming apparatus which concerns on embodiment of this invention, The figure shown above FIG. 9 (a)-FIG.9 (c) is a top view, The figure shown is a cross-sectional view along the II direction of the plan view. It is a schematic diagram for demonstrating the exhaust method in the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram for demonstrating the other exhaust method in the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows the structure of the plasma film-forming apparatus which concerns on the modification of embodiment of this invention. It is a schematic diagram which shows the structure of the plasma film-forming apparatus which concerns on the other modification of embodiment of this invention. It is a schematic diagram which shows the structure of the plasma film-forming apparatus which concerns on the other modification of embodiment of this invention. It is a schematic diagram which shows the structure of the example which applied the plasma film-forming apparatus which concerns on embodiment of this invention to the film-forming chamber of the in-line type film-forming apparatus. It is a schematic diagram in case the chamber of the plasma film-forming apparatus which concerns on embodiment of this invention is cylindrical shape. It is a schematic diagram which shows the structural example of the heating chamber of the plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows the structure of the other example which applied the plasma film-forming apparatus which concerns on embodiment of this invention to the film-forming chamber of the in-line type film-forming apparatus.

  Next, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic. Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention, and the embodiment of the present invention has the following structure and arrangement of components. It is not something specific. The embodiment of the present invention can be variously modified within the scope of the claims.

  As shown in FIG. 1, a plasma film forming apparatus 10 according to an embodiment of the present invention is disposed in a chamber 20 into which a substrate holder 11 having a mounting surface 110 on which a substrate 1 is mounted is carried, and in the chamber 20. A cathode electrode 12, a gas supply device 13 for introducing a process gas 100 between the substrate holder 11 and the cathode electrode 12 in the chamber 20, and AC power is supplied between the substrate holder 11 and the cathode electrode 12, An AC power supply 14 for bringing the process gas 100 into a plasma state between the cathode electrodes 12 is provided. The cathode electrode 12 is disposed so as to face the mounting surface 110 that is disposed extending in the vertical direction in the chamber 20. According to the plasma film forming apparatus 10, a thin film whose main component is a raw material contained in the process gas 100 is formed on the substrate 1.

  In the plasma film forming apparatus 10, the substrate holder 11 is used as an anode electrode. In the example shown in FIG. 1, the substrate holder 11 is grounded.

  For example, the substrate holder 11 may have a structure in which a cross section perpendicular to the mounting surface 110 forms a comb shape. That is, as shown in FIG. 2, a mounting surface 110 is defined as a main surface, a plurality of substrate mounting plates 111 that are spaced apart from each other and arranged in parallel, and a fixing plate that fixes the bottom of each of the substrate mounting plates 111. The substrate holder 11 having 112 can be employed. Although FIG. 2 shows an example in which the number of substrate mounting plates 111 is five, the number of substrate mounting plates 111 is not limited to five.

  At this time, as shown in FIG. 1, the plurality of substrate mounting plates 111 are arranged alternately with the plurality of cathode electrodes 12 and the outermost side is the substrate mounting plate 111. A mounting surface 110 is defined on the surface of the substrate mounting plate 111 facing the cathode electrode 12.

  In the plasma film forming apparatus 10, the substrate holder 11 with the substrate 1 mounted thereon is carried into the chamber 20. Thereafter, a process gas 100 including a film forming source gas is introduced into the chamber 20 from the gas supply device 13.

  After introducing the process gas 100, the pressure inside the chamber 20 is adjusted by the exhaust device 15. After the pressure of the process gas 100 in the chamber 20 is adjusted to a predetermined gas pressure, a predetermined AC power is supplied between the cathode electrode 12 and the substrate holder 11 by the AC power source 14. Thereby, the process gas 100 in the chamber 20 is turned into plasma. By exposing the substrate 1 to the formed plasma, a desired thin film mainly composed of the raw material contained in the raw material gas is formed on the exposed surface of the substrate 1. Note that the temperature of the substrate 1 during the film forming process may be set by a substrate heater (not shown). By setting the temperature of the substrate 1 during the film formation process to a predetermined temperature, the film formation speed can be increased and the film quality can be improved.

A desired thin film can be formed by appropriately selecting a source gas in the plasma film forming apparatus 10. For example, a silicon semiconductor thin film, a silicon nitride thin film, a silicon oxide thin film, a silicon oxynitride thin film, a carbon thin film, or the like can be formed on the substrate 1. Specifically, a silicon nitride (SiN) film is formed on the substrate 1 using a mixed gas of ammonia (NH ₃ ) gas and silane (SiH ₄ ) gas. Alternatively, a silicon oxide (SiO x) film is formed on the substrate 1 using a mixed gas of silane (SiH ₄ ) gas and N ₂ O gas.

  The cathode electrode 12 is preferably formed with a through-hole 120 that penetrates the cathode electrode 12 in the thickness direction, for example, as shown in FIG. The opening of the through hole 120 is formed on the surface of the cathode electrode 12 so as to face the mounting surface 110 of the substrate mounting plate 111. FIG. 3 exemplifies a case where there are three substrate mounting plates 111 of the substrate holder 11 and two cathode electrodes 12.

  The cathode electrode 12 having an opening on the surface functions as a hollow cathode electrode that generates a hollow cathode discharge. In the hollow cathode discharge, electrons emitted from the cathode electrode 12 due to ion incidence on the surface of the cathode electrode 12 are confined in the cathode electrode 12 having no electric field, thereby forming a space for high-density electrons. Gas molecules that have entered the high electron density region repeat ionization and recombination, and are observed as high-intensity emission during recombination. The precursor generated in the high-density plasma is a radical species, diffuses to the outside of the through-hole 120 regardless of the electrode potential, and forms a thin film on the surface of the substrate 1 disposed on the mounting surface 110 of the substrate mounting plate 111. To do.

  On the other hand, in the cathode electrode 12A shown in FIG. 4 which employs a shower electrode structure to which the process gas 100 is supplied from the inside and in which the concave portion 401 is formed on the surface, the concave portion 401 in which high-density plasma is generated by hollow cathode discharge. The process gas 100 is uniformly released from the gas. Thereby, plasma uniformity can be obtained over the entire surface of the cathode electrode 12A.

  However, in the cathode electrode 12A shown in FIG. 4, it is difficult to uniformly supply the process gas 100 to a large number of the recesses 401. The opening diameter and length of the gas ejection port 402, the flow rate and pressure of the process gas 100, and the like. There are various restrictions. Furthermore, since the gas ejection port 402 has a very small diameter of about 0.3 mm to 0.4 mm, clogging is likely to occur. When the process gas 100 cannot be introduced due to clogging, hollow cathode discharge does not occur in the clogged recess 401, so that the uniformity of discharge over the entire surface of the cathode electrode 12A cannot be maintained.

  On the other hand, in the cathode electrode 12 shown in FIG. 3, the process gas 100 is introduced without passing through the cathode electrode 12. Since the diameter of the through-hole 120 is considerably larger than the diameter of the hole required for the shower electrode, there is no fear of clogging, and maintenance is easy. The diameter of the through hole 120 is about 3.8 mm to 8.0 mm, for example, 5 mm.

  Moreover, the plasma excited on both surfaces of the cathode electrode 12 shown in FIG. Therefore, the difference in density of the plasma concentration on both sides of the cathode electrode 12 is naturally corrected, and a plasma space having a uniform density can be generated on both sides of the cathode electrode 12.

  As described above, by adopting a multi-hollow cathode structure in which a large number of through-holes 120 are formed in the cathode electrode 12, uniform multi-hollow discharge can be obtained on both surfaces of the cathode electrode 12. The “multi-hollow discharge” is a discharge generated on the surface of the cathode electrode 12 by combining the hollow cathode discharges generated in the respective through holes 120. Thereby, uniform high-density plasma can be realized on the surface of the cathode electrode 12. As a result, the source gas is efficiently decomposed, and a thin film is uniformly formed on the substrate 1 in a large area at a high speed.

  The through holes 120 are preferably arranged closest to the surface of the cathode electrode 12. By arranging the through holes 120 with the highest possible density, a uniform high electron density electric field can be easily formed on both sides of the cathode electrode 12. FIG. 5 shows an example of the surface of the cathode electrode 12 in which the opening of the through hole 120 is formed.

  The inner surface of the through-hole 120 of the cathode electrode 12 is preferably subjected to a surface treatment using a material having a good secondary electron emission rate. For example, a carbon material that is inexpensive, easy to process, and easy to maintain such as cleaning is suitable for the material of the cathode electrode 12. For example, the cathode electrode 12 made of a carbon material can be cleaned by hydrofluoric acid treatment. In addition, the use of the carbon material does not cause deformation due to high temperature in the plasma treatment process. Alternatively, an aluminum alloy or the like on which a metal oxide film is easily formed is a material suitable for the hollow cathode electrode. In addition, carbon containing carbon fiber, stainless alloy, copper, copper alloy, glass, ceramics, and the like can be used for the cathode electrode 12. Alternatively, the above material may be coated by alumite treatment, plating, or thermal spraying.

  A carbon material is also preferably used for the substrate holder 11 used as the anode electrode. Further, carbon containing carbon fiber, aluminum alloy, stainless alloy, copper, copper alloy, glass, ceramics, and the like can be used for the substrate holder 11. Alternatively, these materials may be coated by alumite treatment, plating, or thermal spraying.

  In the chamber 20, it is preferable to introduce the process gas 100 between the substrate holder 11 and the cathode electrode 12 from below to above. By introducing the process gas 100 from below, gas molecules and radical particles having a light specific gravity that have been turned into plasma naturally flow upward on the surface of the cathode electrode 12 as an upward flow. Therefore, the process gas is uniformly supplied to the surface of the cathode electrode 12 without using a complicated structure such as a shower electrode.

  Note that the surface of the cathode electrode 12 is preferably flat to the extent that the finish symbol is represented by “▽▽▽” so that the process gas 100 flows smoothly. That is, it is preferable that the maximum height Ry is 6.3S, the ten-point average roughness Rz is 6.3Z, and the arithmetic average roughness Ra is smaller than 1.6a. By reducing the surface roughness of the cathode electrode 12, the growth rate of the thin film formed on the substrate 1 can be increased.

  Similarly, the surface of the substrate holder 11 is also preferably flat to the extent that the finish symbol is represented by “▽”. That is, it is preferable that the maximum height Ry is 25S, the ten-point average roughness Rz is 25Z, and the arithmetic average roughness Ra is smaller than 6.3a.

  In order to introduce the process gas 100 from the lower side to the upper side, the gas supply nozzle 130 that ejects the process gas 100 of the gas supply device 13 is arranged along the bottom surface of the cathode electrode 12 as shown in FIG. It is arranged immediately below. By ejecting the process gas 100 from the gas supply nozzle 130 toward the bottom of the cathode electrode 12, the process gas 100 can be supplied almost evenly to both surfaces of the cathode electrode 12.

  At this time, when the substrate holder 11 has a shape having the fixing plate 112 as shown in FIG. 2, the gas introduction holes 113 penetrating the fixing plate 112 in the vertical direction are provided between the substrate mounting plates 111 as shown in FIG. 6. Thus, the fixing plate 112 is formed. The process gas 100 is introduced between the substrate mounting plate 111 and the cathode electrode 12 from below the chamber 20 through the gas introduction hole 113. As shown in FIG. 6, when the substrate holder 11 is supported in the chamber 20 by the support table 30, the support table 30 penetrates the support table 30 in the vertical direction at a position corresponding to the gas introduction hole 113 of the support table 30. An introduction hole 31 is formed.

  When there are a plurality of gas supply nozzles 130, the gas supply nozzles 130 are arranged along the bottom surface of the cathode electrode 12 as shown in FIG. 7. As shown in FIG. 8 illustrating the substrate mounting plate 111 through the cathode electrode 12, the mounting surface 110 is defined on the surface of the substrate mounting plate 111 facing the cathode electrode 12. As a result, the substrate 1 is disposed to face the cathode electrode 12.

  Examples of the shape of the ejection port of the gas supply nozzle 130 are shown in FIGS. 9 (a) to 9 (c). FIG. 9A shows an example in which a groove is formed along the diameter at the tip of the cylindrical gas supply nozzle 130 and an ejection port is arranged at the center of the groove. FIG. 9B shows an example in which a concave portion is provided at the tip of the cylindrical gas supply nozzle 130 and an ejection port is arranged at the central portion of the bottom surface of the concave portion. FIG. 9C is an example in which an ejection port is arranged at the center of the tip of the cylindrical gas supply nozzle 130.

  When the process gas 100 is a gas in which a plurality of types of gases are mixed, the process gas 100 in which all the gases are mixed may be supplied from the gas supply nozzle 130, or the gas supply nozzle 130 that is different for each type of gas. The gas may be supplied from each.

  A configuration example of the exhaust device 15 is shown in FIG. The exhaust device 15 shown in FIG. 10 is disposed on the upper portion of the chamber 20 (not shown). The exhaust device 15 has a first exhaust adjustment plate 151 disposed above the substrate holder 11 and the cathode electrode 12 and a frame shape disposed so as to be positioned below the outer edge of the first exhaust adjustment plate 151. And a second exhaust adjustment plate 152. As shown in FIG. 10, the process gas 100 that has flowed above the substrate holder 11 and the cathode electrode 12 passes through the gap between the first exhaust adjustment plate 151 and the second exhaust adjustment plate 152, and the first gas The gas is discharged from the outer edge of the exhaust adjustment plate 151 to the outside of the chamber 20. The exhaust device 15 adjusts the exhaust amount by controlling the width of the gap between the first exhaust adjustment plate 151 and the second exhaust adjustment plate 152.

  FIG. 11 shows another configuration example of the exhaust device 15. The exhaust device 15 shown in FIG. 11 is disposed on the upper portion of the chamber 20 (not shown) and has a large number of exhaust holes 150 penetrating in the vertical direction. The process gas 100 is exhausted to the outside of the chamber 20 through the exhaust hole 150. The exhaust device 15 adjusts the exhaust amount by controlling the opening degree of the exhaust hole 150.

  According to the plasma film forming apparatus 10 according to the embodiment of the present invention, the substrate 1 can be placed in the chamber 20 with the film forming surface of the substrate 1 vertical by using the substrate holder 11 as an anode electrode. For this reason, a plurality of cathode electrodes 12 are arranged in the chamber 20. Therefore, the plasma film forming apparatus 10 shown in FIG. 1 has a larger number of substrates 1 than the plasma film forming apparatus in which the film forming surface is mounted on a flat substrate plate or the like and the film forming process is performed. Can be stored in the chamber 20 at the same time, and the processing capability can be remarkably improved.

  Further, by adopting the cathode electrode 12 in which the through-hole 120 is formed, uniform and high-density plasma can be stably generated on both surfaces of the cathode electrode 12. At this time, uniform high-density plasma can be generated in a large area regardless of the frequency of the AC power supplied from the AC power supply 14. Even if the frequency of the AC power supplied by the AC power supply 14 is set to, for example, about 60 Hz to 27 MHz, uniform and high-density plasma can be generated. That is, there is no need to use an AC power supply that supplies expensive VHF band AC power. The plasma film forming apparatus 10 can obtain a high-density plasma equivalent to or higher than that of a conventional plasma film forming apparatus using a VHF band AC power source even in a low frequency RF band such as 250 KHz.

  As a result, a thin film having a large area can be formed on the substrate 1 uniformly at a high speed. That is, according to the plasma film forming apparatus 10, the film thickness and the film quality uniformity of the formed film are improved, and the film forming speed is improved.

  Further, the plasma film forming apparatus 10 has a complicated structure, and it is not necessary to use a shower electrode that needs to form fine holes. For this reason, the frequent maintenance like a shower electrode is unnecessary. Furthermore, the shower electrode needs to be enlarged in order to disperse the process gas 100 uniformly, whereas the plasma film forming apparatus 10 does not need to be enlarged. Therefore, according to the plasma film forming apparatus 10, it is possible to provide a plasma film forming apparatus that can efficiently form a uniform film on all the substrates in the chamber 20 and that is suppressed in size.

  Furthermore, the manufacturing period of the plasma film forming apparatus 10 is shorter and the manufacturing yield is improved as compared with a plasma film forming apparatus using a shower electrode that requires processing of several thousand or more micro holes. For this reason, the manufacturing cost of the plasma film-forming apparatus 10 is suppressed.

  FIG. 12 shows an example in which AC power output from the AC power supply 14 is supplied between the substrate holder 11 and the cathode electrode 12 via the pulse generator 16. In the example shown in FIG. 12, the output of the pulse generator 16 is supplied to the cathode electrode 12, and the substrate holder 11 is grounded. By stopping the supply of AC power at a constant period, plasma is stably formed in the chamber 20. This is because by providing a stop period for the supply of AC power, the temperature of the electrons is lowered and the stability of the discharge is improved. However, care should be taken because power efficiency decreases if the off time is set too long.

  For example, the AC power is supplied between the substrate holder 11 and the cathode electrode 12 so that the ON time and the OFF time are alternately repeated with the ON time for supplying AC power being 600 μsec and the OFF time for stopping the supply of AC power being 50 μsec. Supplied. The on time is preferably set in the range of about 100 μs to 1000 μs, and the off time is set in the range of about 10 μs to 100 μs.

  As described above, the supply of AC power between the substrate holder 11 and the cathode electrode 12 is pulse-controlled and the supply of AC power is periodically turned on / off, so that the occurrence of abnormal discharge can be suppressed.

  FIG. 13 shows an example in which the AC power source 17 is mounted on the substrate holder 11 which is an anode electrode, separately from the AC power source 14 mounted on the cathode electrode 12. By supplying AC power to the anode electrode, the film quality of the thin film formed on the substrate 1 can be improved. The frequency of the AC power supplied from the AC power supply 17 may be equal to or lower than the frequency of the AC power supplied from the AC power supply 14. For example, the frequency of the AC power supplied by the AC power supply 17 is set to about 60 Hz to 27 MHz.

  Note that plasma cleaning of the substrate 1 can be performed by supplying AC power only from the AC power source 17 without supplying AC power from the AC power source 14. For example, a sputtering gas is introduced into the chamber 20, and the substrate 1 is cleaned by sputter etching while supplying AC power from the AC power supply 17.

  As shown in FIG. 14, the output of the AC power supply 14 may be divided by a power splitter 18, and the divided AC power may be supplied to the cathode electrode 12 and the substrate holder 11, respectively. Thereby, the number of alternating current power supplies can be reduced compared with FIG. The power supplied to the substrate holder 11 may be smaller than the power supplied to the cathode electrode 12. For example, 90% to 100% AC power is supplied to the cathode electrode 12, and 10% to 0% AC power is supplied to the substrate holder 11.

  The plasma film forming apparatus 10 shown in FIG. 1 can be used, for example, as a film forming chamber of an in-line type film forming apparatus. FIG. 15 shows an example of an in-line film forming apparatus 200 including three chambers: a take-in / heat chamber 210, a film forming chamber 220, and a take-out chamber 230.

  In the in-line film forming apparatus 200, the substrate holder 11 on which the substrate 1 is mounted is taken into the take-in / heating chamber 210. After the substrate 1 is preheated to a predetermined temperature in the take-in / heat chamber 210, the substrate holder 11 is transferred from the take-in / heat chamber 210 to the film formation chamber 220 through the open / close gate 240 </ b> A. After the thin film is formed on the substrate 1 in the film formation chamber 220, the substrate holder 11 is transferred from the film formation chamber 220 to the take-out chamber 230 through the openable gate 240 </ b> B. Thereafter, the substrate holder 11 is taken out from the take-out chamber 230. The substrate holder 11 is transferred between the chambers of the inline-type film forming apparatus 200 by a transfer device (not shown).

  In addition, as shown in FIG. 16, it is preferable that the chamber 20 is cylindrical shape. By making it cylindrical shape, the chamber 20 can have sufficient strength as a vacuum vessel. For this reason, even if the thickness of the chamber 20 is reduced, sufficient strength can be realized with an inexpensive and simple structure including during heating.

  FIG. 17 shows a configuration example of the intake / heating chamber 210. The take-in / heating chamber 210 includes heaters 211 </ b> A disposed above and below the substrate holder 11 and slot heaters 211 </ b> B disposed between the substrate mounting plates 111 in parallel with the substrate mounting plate 111. The substrate holder 11 is supported in the take-in / heating chamber 210 by a support table 212. A heat insulating plate 213 is disposed between the support base 212 and the slot heater 211B.

  The slot heater 211 </ b> B heats the substrate holder 11 and the substrate 1 mounted on the mounting surface 110, thereby preventing a temperature difference between the substrate 1 and the substrate holder 11. For example, when preheating is performed while monitoring the temperature of the substrate holder 11, the temperature of the substrate 1 can be accurately adjusted.

  As the heater 211A and the slot heater 211B, a lamp heater, a ceramic heater, a sheathed heater, an induction heater, or the like can be employed.

  In the above, an example of the in-line type film forming apparatus 200 having three chambers is shown. However, the plasma film forming apparatus 10 shown in FIG. 1 is applied to the in-line type film forming apparatus 200 having two rooms as shown in FIG. May be. In the in-line film forming apparatus 200 including the heating chamber 211 and the film forming chamber 220, the substrate holder 11 is taken in and out of the heating chamber 211. After the substrate 1 taken into the heating chamber 211 is preheated to a predetermined temperature in the heating chamber 211, the substrate holder 11 is transferred to the film formation chamber 220 through the openable gate 241. After a thin film is formed on the substrate 1 in the film formation chamber 220, the substrate holder 11 is transferred to the heating chamber 211 through the gate 241. Thereafter, the substrate holder 11 is taken out from the heating chamber 211. Note that, similarly to the intake / heating chamber 210 shown in FIG. 17, it is preferable to arrange the slot heater 211 </ b> B between the substrate mounting plates 111 in the heating chamber 211 shown in FIG. 18.

  As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, although the example in which the substrate holder 11 includes the plurality of substrate mounting plates 111 and the fixing plate 112 has been shown, the shape of the substrate holder 11 is not limited thereto. For example, the substrate holder 11 may be a single plate.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  The plasma film-forming apparatus of the present invention can be used in the manufacturing industry of semiconductor devices that form a film on a substrate.

Claims (11)

A mounting surface on which a substrate is mounted is defined as a main surface, and a chamber into which a substrate holder having a plurality of substrate mounting plates spaced apart from each other and arranged in parallel is carried;
A plurality of through-holes each having an opening are formed in two main surfaces facing each other, and the mounting surface and the two main surfaces are arranged to extend in the vertical direction in the chamber so as to face each other. A plurality of cathode electrodes respectively disposed between the plurality of substrate mounting plates ;
A gas supply device for introducing a process gas between the substrate holder in the chamber and the cathode electrode;
An alternating current power source for supplying alternating current power between the substrate holder and the cathode electrode to bring the process gas into a plasma state between the substrate holder and the cathode electrode, and a hollow cathode discharge generated in each of the plurality of through holes. In combination , a thin film mainly composed of the raw material contained in the process gas is formed on the substrate by multi-hollow discharge generated on the two main surfaces of the cathode electrode .   The plasma film forming apparatus according to claim 1, wherein the gas supply apparatus introduces a process gas into the chamber from the bottom to the top.   The plasma deposition apparatus according to claim 2, wherein the gas supply apparatus ejects the process gas from a gas supply nozzle disposed along the bottom surface of the cathode electrode toward the bottom of the cathode electrode. The plurality of substrate mounting plates are arranged alternately with the plurality of cathode electrodes, and the outermost side is the substrate mounting plate, and the mounting surface is on the surface of the substrate mounting plate facing the cathode electrode, respectively. The plasma film forming apparatus according to claim 1 , wherein the plasma film forming apparatus is defined. The substrate holder is
Fixing the bottom of each of the plurality of substrate mounting plates, and having a fixing plate in which a gas introduction hole penetrating in the vertical direction is formed between the plurality of substrate mounting plates;
The plasma film forming apparatus according to claim 1, wherein said process gas to be introduced between the cathode electrode and the substrate mounting plate through the gas introduction hole.   The plasma deposition apparatus according to claim 1, wherein the chamber has a cylindrical shape. Further comprising a heating chamber in which the substrate holder is stored before forming the thin film on the substrate, the heating chamber,
The plasma film forming apparatus according to claim 1 , further comprising a slot heater disposed between the plurality of substrate mounting plates to heat the substrate holder and the substrate mounted on the mounting surface.   The plasma film-forming apparatus according to claim 1, wherein at least one of the substrate holder and the cathode electrode is made of carbon.   The plasma film-forming apparatus according to claim 1, wherein the maximum height of the surface roughness of the cathode electrode is 6.3S or less.   2. The plasma film forming apparatus according to claim 1, wherein the maximum height of the surface roughness of the substrate holder is 25S or less. A chamber into which a substrate holder having a mounting surface on which a substrate is mounted is loaded;
A cathode electrode disposed so as to face the mounting surface disposed extending in the vertical direction in the chamber;
A process gas is ejected from a gas supply nozzle disposed along the bottom surface of the cathode electrode toward the bottom of the cathode electrode, and the process gas is directed from below to above between the substrate holder and the cathode electrode in the chamber. A gas supply device for introducing,
An alternating current power source for supplying alternating current power between the substrate holder and the cathode electrode to bring the process gas into a plasma state between the substrate holder and the cathode electrode;
And a thin film mainly comprising a raw material contained in the process gas is formed on the substrate.

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