JP2015015382A - Film deposition device and film deposition method - Google Patents

Film deposition device and film deposition method Download PDF

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JP2015015382A
JP2015015382A JP2013141598A JP2013141598A JP2015015382A JP 2015015382 A JP2015015382 A JP 2015015382A JP 2013141598 A JP2013141598 A JP 2013141598A JP 2013141598 A JP2013141598 A JP 2013141598A JP 2015015382 A JP2015015382 A JP 2015015382A
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substrate
boat
chamber
film forming
process gas
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中山　胤芳
Taneyoshi Nakayama
胤芳 中山
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Shimadzu Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a film deposition device and a film deposition method, with which it is possible to suppress a temperature difference in a vertical direction of a substrate under film deposition processing.SOLUTION: A film deposition device includes: a chamber that accommodates a boat having a substrate plate on which a substrate that is a processing target is mounted in a longitudinal direction; a bottom face heater that heats a bottom face of the boat in the chamber; a control device that controls a set temperature of the bottom face heater so that a temperature difference between a lower part and an upper part of the substrate plate becomes equal to or smaller than a constant value; a side face heater that heats a side face of the boat in the chamber; and a gas supply device that supplies process gas into the chamber, wherein a thin film, whose main component is a raw material contained in the process gas, is formed on the substrate.

Description

本発明は、所定の温度に設定された基板に成膜処理を行う成膜装置及び成膜方法に関する。   The present invention relates to a film forming apparatus and a film forming method for performing a film forming process on a substrate set at a predetermined temperature.

半導体装置の製造工程では、時間当たりの基板処理枚数が重要な仕様である場合に、複数の基板を同時に処理するバッチ式の処理方法が採用される。バッチ式の処理では、複数の基板を搭載するサンプルホルダが使用される。このサンプルホルダには、水平な板に基板を水平に配列して配置するカートタイプや、基板を垂直に複数並べるボートタイプなどがある。カートタイプのサンプルホルダを使用した場合は、製造装置の設置面積（フットプリント）が大きい。これに対し、ボートタイプのサンプルホルダ（以下において、単に「ボート」という。）を使用すれば、製造装置の設置面積を抑制できる（例えば特許文献１参照。）。   In the manufacturing process of a semiconductor device, when the number of processed substrates per time is an important specification, a batch type processing method is employed in which a plurality of substrates are processed simultaneously. In batch type processing, a sample holder on which a plurality of substrates are mounted is used. Examples of the sample holder include a cart type in which substrates are arranged horizontally on a horizontal plate, and a boat type in which a plurality of substrates are arranged vertically. When a cart type sample holder is used, the installation area (footprint) of the manufacturing apparatus is large. On the other hand, if a boat-type sample holder (hereinafter simply referred to as “boat”) is used, the installation area of the manufacturing apparatus can be suppressed (see, for example, Patent Document 1).

太陽電池などの半導体装置の製造工程では、処理工程前の予備加熱或いは処理工程時のアニール処理などにおいて基板が加熱される。例えば、基板を所定の温度に設定して成膜処理を行う場合は、基板が搭載されたボートを加熱室で加熱した後に、ボートが成膜室に格納される。そして、ボートの温度が低下しないように成膜室内のヒータ上にボートが載せられ、ボートを保温しつつ成膜処理が行われる。   In a manufacturing process of a semiconductor device such as a solar cell, the substrate is heated in preheating before the processing process or annealing in the processing process. For example, when the film formation process is performed with the substrate set at a predetermined temperature, the boat on which the substrate is mounted is heated in the heating chamber, and then the boat is stored in the film formation chamber. Then, the boat is placed on the heater in the film forming chamber so that the temperature of the boat does not decrease, and the film forming process is performed while the boat is kept warm.

特開２００２−７５８８４号公報JP 2002-75884 A

ヒータ上に載せてボートの底面を加熱すると底面側の方が上部よりも高温になり、ボートの上下方向に温度差が生じる。ボートには基板が縦方向に搭載されているため、基板の温度にも上下方向で差が生じる。温度が低い方にプロセスガスが集まるため、この温度差によってプロセスガスの分布の均一性が低下する。その結果、基板上に形成された膜の膜厚分布が悪化するなどの問題があった。   When the bottom surface of the boat is heated on the heater, the bottom surface side becomes hotter than the upper portion, and a temperature difference occurs in the vertical direction of the boat. Since the board is mounted on the boat in the vertical direction, the temperature of the board also varies in the vertical direction. Since the process gas collects at a lower temperature, the uniformity of the process gas distribution is reduced by this temperature difference. As a result, there is a problem that the film thickness distribution of the film formed on the substrate is deteriorated.

上記問題点に鑑み、成膜処理中における基板の上下方向の温度差を抑制できる成膜装置及び成膜方法を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a film forming apparatus and a film forming method that can suppress a temperature difference in the vertical direction of the substrate during the film forming process.

本発明の一態様によれば、（イ）処理対象の基板が縦方向に搭載された基板プレートを有するボートが格納されるチャンバーと、（ロ）チャンバー内においてボートの底面を加熱する底面ヒータと、（ハ）基板プレートの下部と上部との温度差が一定値以下になるように底面ヒータの設定温度を制御する制御装置と、（ニ）チャンバー内においてボートを側面から加熱する側面ヒータと、（ホ）チャンバー内にプロセスガスを供給するガス供給装置とを備え、プロセスガスに含まれる原料を主成分とする薄膜を基板上に形成する成膜装置が提供される。   According to one aspect of the present invention, (a) a chamber in which a boat having a substrate plate on which a substrate to be processed is mounted in a vertical direction is stored; and (b) a bottom heater that heats the bottom surface of the boat in the chamber; (C) a control device that controls the set temperature of the bottom heater so that the temperature difference between the lower part and the upper part of the substrate plate is a certain value or less; (d) a side heater that heats the boat from the side in the chamber; (E) There is provided a film forming apparatus that includes a gas supply device that supplies a process gas into a chamber and that forms a thin film mainly containing a raw material contained in the process gas on a substrate.

本発明の他の態様によれば、（イ）処理対象の基板が縦方向に搭載された基板プレートを有するボートをチャンバーに格納するステップと、（ロ）基板プレートの下部と上部との温度差が一定値以下になるように設定温度が制御された底面ヒータによって、チャンバー内においてボートの底面を加熱するステップと、（ハ）底面ヒータによってボートの底面を加熱しながら、ボートを側面から加熱するステップと、（ニ）チャンバー内にプロセスガスを供給するステップとを含み、プロセスガスに含まれる原料を主成分とする薄膜を基板上に形成する成膜方法が提供される。   According to another aspect of the present invention, (b) storing a boat having a substrate plate on which a substrate to be processed is mounted in a vertical direction in a chamber; and (b) a temperature difference between a lower portion and an upper portion of the substrate plate. A step of heating the bottom surface of the boat in the chamber by a bottom heater whose set temperature is controlled to be equal to or less than a predetermined value; and (c) heating the boat from the side surface while heating the bottom surface of the boat by the bottom surface heater. And (d) supplying a process gas into the chamber, and a film forming method for forming a thin film mainly composed of a raw material contained in the process gas on a substrate is provided.

本発明によれば、成膜処理中における基板の上下方向の温度差を抑制できる成膜装置及び成膜方法を提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the film-forming apparatus and film-forming method which can suppress the temperature difference of the up-down direction of a board | substrate during the film-forming process can be provided.

本発明の実施形態に係る成膜装置の構成を示す模式図である。It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る成膜装置に格納されるボートの構成例を示す模式図である。It is a schematic diagram which shows the structural example of the boat stored in the film-forming apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る成膜装置が加熱室を有する構成を示す模式図である。It is a schematic diagram which shows the structure in which the film-forming apparatus which concerns on embodiment of this invention has a heating chamber.

図面を参照して、本発明の実施形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであることに留意すべきである。又、以下に示す実施形態は、この発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の実施形態は、構成部品の構造、配置などを下記のものに特定するものでない。この発明の実施形態は、特許請求の範囲において、種々の変更を加えることができる。   Embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic. Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention, and the embodiment of the present invention has the following structure and arrangement of components. It is not something specific. The embodiment of the present invention can be variously modified within the scope of the claims.

本発明の実施形態に係る成膜装置１は、図１に示すように、処理対象の基板１００が縦方向に搭載された基板プレート１１を有するボート１０が格納されるチャンバー２０と、チャンバー２０内においてボート１０の底面を加熱する底面ヒータ３０と、基板プレート１１の下部と上部との温度差が一定値以下になるように底面ヒータ３０の設定温度を制御する制御装置４０と、チャンバー２０内においてボート１０を側面から加熱する側面ヒータ５０と、チャンバー２０内にプロセスガス２００を供給するガス供給装置６０とを備える。ボート１０の下部は底面ヒータ３０に近い部分であり、上部は底面ヒータ３０から遠い部分である。成膜装置１により、プロセスガス２００に含まれる原料を主成分とする薄膜が基板１００上に形成される。   As shown in FIG. 1, a film forming apparatus 1 according to an embodiment of the present invention includes a chamber 20 in which a boat 10 having a substrate plate 11 on which a substrate 100 to be processed is mounted in a vertical direction is stored, In the chamber 20, a bottom surface heater 30 that heats the bottom surface of the boat 10, a control device 40 that controls the set temperature of the bottom surface heater 30 so that the temperature difference between the lower portion and the upper portion of the substrate plate 11 becomes a certain value or less. A side heater 50 that heats the boat 10 from the side and a gas supply device 60 that supplies the process gas 200 into the chamber 20 are provided. The lower part of the boat 10 is a part close to the bottom heater 30, and the upper part is a part far from the bottom heater 30. By the film forming apparatus 1, a thin film mainly composed of the raw material contained in the process gas 200 is formed on the substrate 100.

成膜装置１はプラズマ化学気相成長（ＣＶＤ）装置であって、チャンバー２０内で基板１００と対向して配置されたカソード電極７０と、ボート１０とカソード電極７０間に交流電力を供給して、基板１００とカソード電極７０間においてプロセスガス２００をプラズマ状態にする交流電源８０とを更に備える。成膜装置１では、ボート１０がアノード電極として使用される。   The film forming apparatus 1 is a plasma enhanced chemical vapor deposition (CVD) apparatus, and supplies AC power between a cathode electrode 70 disposed in the chamber 20 so as to face the substrate 100, and between the boat 10 and the cathode electrode 70. Further, an AC power supply 80 for bringing the process gas 200 into a plasma state between the substrate 100 and the cathode electrode 70 is further provided. In the film forming apparatus 1, the boat 10 is used as an anode electrode.

成膜装置１を用いた成膜処理工程では、チャンバー２０の外部から供給されたプロセスガス２００がガス供給装置６０によってボート１０とカソード電極７０間に導入される。チャンバー２０内を排気するガス排気装置９０によってチャンバー２０内の圧力が所定値に調整される。その後、チャンバー２０内でプロセスガス２００がプラズマ化される。形成されたプラズマに基板１００が曝されることにより、プロセスガス２００に含まれる原料を主成分とする所望の薄膜が基板１００の露出した表面に形成される。   In the film forming process using the film forming apparatus 1, the process gas 200 supplied from the outside of the chamber 20 is introduced between the boat 10 and the cathode electrode 70 by the gas supply apparatus 60. The pressure in the chamber 20 is adjusted to a predetermined value by the gas exhaust device 90 that exhausts the inside of the chamber 20. Thereafter, the process gas 200 is turned into plasma in the chamber 20. By exposing the substrate 100 to the formed plasma, a desired thin film mainly composed of the raw material contained in the process gas 200 is formed on the exposed surface of the substrate 100.

ボート１０は、図２に示すように、基板１００が搭載される搭載面をそれぞれ有する複数の基板プレート１１が搭載面の面法線方向に並行に配列されたボートタイプのサンプルホルダである。基板プレート１１のそれぞれの下部は底板１２によって固定されている。基板プレート１１を複数有するボート１０を使用することにより、１回の成膜処理工程で処理できる基板１００の枚数が増加し、全体の処理時間を短縮することができる。更に、成膜装置１の設置面積を小さくできる。なお、１つの基板プレート１１に搭載される基板の枚数は任意に設定できる。   As shown in FIG. 2, the boat 10 is a boat-type sample holder in which a plurality of substrate plates 11 each having a mounting surface on which a substrate 100 is mounted are arranged in parallel to the surface normal direction of the mounting surface. Each lower portion of the substrate plate 11 is fixed by a bottom plate 12. By using the boat 10 having a plurality of substrate plates 11, the number of substrates 100 that can be processed in one film forming process increases, and the overall processing time can be shortened. Furthermore, the installation area of the film forming apparatus 1 can be reduced. The number of substrates mounted on one substrate plate 11 can be arbitrarily set.

基板１００が所定の温度に設定された状態で成膜処理を行うために、底面ヒータ３０及び側面ヒータ５０によって、ボート１０に搭載された基板１００が加熱される。底面ヒータ３０と側面ヒータ５０には、例えばシーズヒータなどを採用可能である。   In order to perform the film forming process in a state where the substrate 100 is set to a predetermined temperature, the substrate 100 mounted on the boat 10 is heated by the bottom heater 30 and the side heater 50. As the bottom heater 30 and the side heater 50, for example, a sheathed heater can be employed.

底面ヒータ３０による加熱では、基板プレート１１の上部と下部との温度差が生じやすい。この基板プレート１１の温度差によって、成膜工程中の基板１００の上部と下部に温度差が生じる。既に述べたように、基板１００の上下方向の温度差によってプロセスガスの分布の均一性が低下する。制御装置４０は、基板１００の表面におけるプロセスガス２００の分布を均一にするために、基板１００の上下方向の温度差が小さくなるように底面ヒータ３０の設定温度を調整する。その結果、基板１００の上下方向の温度差によるプロセスガス２００の分布は均一であり、基板１００上に形成される膜の膜厚差が抑制される。底面ヒータ３０の設定温度は、例えば以下のように調整される。   The heating by the bottom heater 30 tends to cause a temperature difference between the upper part and the lower part of the substrate plate 11. Due to the temperature difference of the substrate plate 11, a temperature difference is generated between the upper part and the lower part of the substrate 100 during the film forming process. As already described, the uniformity of the process gas distribution decreases due to the temperature difference in the vertical direction of the substrate 100. In order to make the distribution of the process gas 200 uniform on the surface of the substrate 100, the control device 40 adjusts the set temperature of the bottom heater 30 so that the temperature difference in the vertical direction of the substrate 100 becomes small. As a result, the distribution of the process gas 200 due to the temperature difference in the vertical direction of the substrate 100 is uniform, and the film thickness difference of the film formed on the substrate 100 is suppressed. The set temperature of the bottom heater 30 is adjusted as follows, for example.

先ず、基板１００上に形成される膜の膜厚分布が品質に問題ない範囲を設定し、膜厚分布が設定された範囲であるための、基板１００の上部と下部の温度差を実験などによって取得する。即ち、基板１００の上部と下部の温度差と膜厚分布の関係を調査する。なお、基板１００に形成される薄膜の膜厚に関して、（最大値−最小値）／（最大値＋最小値）の値を膜厚分布のばらつきとして管理する場合、例えば３％を上限とする。上記の範囲の膜厚分布のばらつきを実現するように、底面ヒータ３０の設定温度が調整される。   First, a range in which the film thickness distribution of the film formed on the substrate 100 has no problem in quality is set, and the temperature difference between the upper and lower portions of the substrate 100 is experimentally determined because the film thickness distribution is in the set range. get. That is, the relationship between the temperature difference between the upper part and the lower part of the substrate 100 and the film thickness distribution is investigated. When managing the value of (maximum value−minimum value) / (maximum value + minimum value) as the variation in film thickness distribution, the upper limit is, for example, 3%. The set temperature of the bottom heater 30 is adjusted so as to realize the variation in the film thickness distribution in the above range.

例えば、基板１００上に形成される膜の膜厚分布が品質に問題ない範囲であるためには、基板１００の上部と下部の温度差が１０℃以下であるとする。この場合には、基板１００の上部と下部との温度差が１０℃以下であるように、制御装置４０が底面ヒータ３０の設定温度を制御する。   For example, in order for the film thickness distribution of the film formed on the substrate 100 to be in a range where there is no problem in quality, the temperature difference between the upper part and the lower part of the substrate 100 is 10 ° C. or less. In this case, the control device 40 controls the set temperature of the bottom heater 30 so that the temperature difference between the upper part and the lower part of the substrate 100 is 10 ° C. or less.

基板１００の上部と下部の温度差が所望の温度差以下であるようにするために、制御装置４０は、基板プレート１１の下部と上部との温度差が一定値以下になるように底面ヒータ３０の設定温度を制御する。基板プレート１１の上部及び下部の温度は、基板１００の上部及び下部の温度に等しいためである。   In order for the temperature difference between the upper part and the lower part of the substrate 100 to be equal to or less than a desired temperature difference, the control device 40 causes the bottom heater 30 so that the temperature difference between the lower part and the upper part of the substrate plate 11 becomes a certain value or less. Control the set temperature. This is because the upper and lower temperatures of the substrate plate 11 are equal to the upper and lower temperatures of the substrate 100.

例えば、実験などによって基板１００の上部と下部の温度差と底面ヒータ３０の設定温度との関係を調査しておく。その調査により得られた結果を用いて、基板１００の上部と下部の温度差が所定の温度差以下であるように成膜工程中の底面ヒータ３０の設定温度が制御される。   For example, the relationship between the temperature difference between the upper part and the lower part of the substrate 100 and the set temperature of the bottom heater 30 is investigated by an experiment or the like. Using the result obtained by the investigation, the set temperature of the bottom heater 30 during the film forming process is controlled so that the temperature difference between the upper part and the lower part of the substrate 100 is not more than a predetermined temperature difference.

なお、成膜工程中の基板１００の上部と下部の温度差、つまり基板プレート１１の下部と上部との温度差と、底面ヒータ３０の設定温度との関係は、例えば以下のようにして実験的に得ることができる。即ち、上部と下部に熱電対を配置した基板１００をボート１０に搭載し、通常の成膜工程と同様にして基板１００の成膜処理を行う。このとき、底面ヒータ３０の設定温度と熱電対により得られる基板温度との関係から、所定の温度差での底面ヒータ３０の設定温度を知ることができる。   The relationship between the temperature difference between the upper part and the lower part of the substrate 100 during the film forming process, that is, the temperature difference between the lower part and the upper part of the substrate plate 11 and the set temperature of the bottom heater 30 is experimental as follows, for example. Can get to. That is, the board | substrate 100 which has arrange | positioned the thermocouple in the upper part and the lower part is mounted in the boat 10, and the film-forming process of the board | substrate 100 is performed like a normal film-forming process. At this time, the set temperature of the bottom heater 30 at a predetermined temperature difference can be known from the relationship between the set temperature of the bottom heater 30 and the substrate temperature obtained by the thermocouple.

制御装置４０は、例えば上記にようにして予め得られた基板１００の上部と下部の温度差と底面ヒータ３０の設定温度との関係を用いて、基板１００の上部と下部の温度差が所定の温度差以下であるように、成膜工程中の底面ヒータ３０の設定温度を制御する。上記のようにして、基板プレート１１の下部と上部との温度差が一定値以下になるように底面ヒータ３０の設定温度が制御される。   The control device 40 uses the relationship between the temperature difference between the upper and lower portions of the substrate 100 and the set temperature of the bottom heater 30 previously obtained as described above, for example, so that the temperature difference between the upper and lower portions of the substrate 100 is a predetermined value. The set temperature of the bottom heater 30 during the film forming process is controlled so as to be equal to or less than the temperature difference. As described above, the set temperature of the bottom heater 30 is controlled so that the temperature difference between the lower portion and the upper portion of the substrate plate 11 becomes a certain value or less.

ただし、底面ヒータ３０による加熱では、基板プレート１１の上部が下部よりも温度低下しやすい。このため、成膜装置１では、側面ヒータ５０によってボート１０を側面から加熱する。側面ヒータ５０により、温度が下がりやすい基板プレート１１の上部の温度低下を抑制できる。側面ヒータ５０の設定温度は、成膜工程中における基板１００の設定温度である。例えば、成膜工程中の基板１００の温度を４５０℃に維持する必要があれば、側面ヒータ５０の設定温度は４５０℃に設定される。ボート１０の側面に配置される側面ヒータ５０による加熱では、基板プレート１１の上下方向に温度差は生じない。   However, in the heating by the bottom heater 30, the temperature of the upper part of the substrate plate 11 is more likely to be lower than that of the lower part. For this reason, in the film forming apparatus 1, the boat 10 is heated from the side by the side heater 50. The side heater 50 can suppress a temperature drop at the top of the substrate plate 11 where the temperature tends to drop. The set temperature of the side heater 50 is the set temperature of the substrate 100 during the film forming process. For example, if the temperature of the substrate 100 during the film forming process needs to be maintained at 450 ° C., the set temperature of the side heater 50 is set to 450 ° C. In the heating by the side heater 50 disposed on the side surface of the boat 10, no temperature difference occurs in the vertical direction of the substrate plate 11.

上記のように、成膜装置１によれば、底面ヒータ３０と側面ヒータ５０によって、基板プレート１１の上下方向の温度差を抑制しつつ、基板１００を成膜工程で必要な温度に設定できる。   As described above, according to the film forming apparatus 1, the bottom heater 30 and the side heater 50 can set the substrate 100 to a temperature necessary for the film forming process while suppressing the temperature difference in the vertical direction of the substrate plate 11.

なお、ガス供給装置６０が、基板プレート１１の下部から上部に向けてプロセスガス２００を供給することが好ましい。下方からチャンバー２０内にプロセスガス２００を導入することにより、比重の軽いプラズマ化したガス分子、ラジカル粒子は上方流としてカソード電極７０の表面を自然に流れ上がる。したがって、シャワー電極のような複雑な構造を用いなくても、カソード電極７０の表面にプロセスガス２００が均一に供給される。   It is preferable that the gas supply device 60 supplies the process gas 200 from the lower part to the upper part of the substrate plate 11. By introducing the process gas 200 into the chamber 20 from below, the gas molecules and radical particles that have been converted into plasma and light in specific gravity naturally flow upward on the surface of the cathode electrode 70 as an upward flow. Therefore, the process gas 200 is uniformly supplied to the surface of the cathode electrode 70 without using a complicated structure such as a shower electrode.

成膜装置１によれば、プロセスガス２００を適宜選択することによって、所望の薄膜を形成できる。例えば、シリコン半導体薄膜、シリコン窒化薄膜、シリコン酸化薄膜、シリコン酸窒化薄膜、カーボン薄膜などを基板１００上に形成することができる。具体的には、アンモニア（ＮＨ3）ガスとモノシラン（ＳｉＨ4）ガスの混合ガスを用いて、基板１００上に窒化シリコン（ＳｉＮ）膜が形成される。或いは、モノシラン（ＳｉＨ4）ガスとＮ2Ｏガスの混合ガスを、又はＴＥＯＳガスと酸素ガスを用いて、基板１００上に酸化シリコン（ＳｉＯx）膜が形成される。 According to the film forming apparatus 1, a desired thin film can be formed by appropriately selecting the process gas 200. For example, a silicon semiconductor thin film, a silicon nitride thin film, a silicon oxide thin film, a silicon oxynitride thin film, a carbon thin film, or the like can be formed on the substrate 100. Specifically, a silicon nitride (SiN) film is formed on the substrate 100 using a mixed gas of ammonia (NH 3 ) gas and monosilane (SiH 4 ) gas. Alternatively, a silicon oxide (SiOx) film is formed on the substrate 100 using a mixed gas of monosilane (SiH 4 ) gas and N 2 O gas, or TEOS gas and oxygen gas.

成膜装置１がプラズマＣＶＤ装置である場合、図３に示すように、成膜前に基板１００を予備加熱する加熱室２１が用意されることが多い。この場合には、加熱室２１に格納されたボート１０に搭載された基板１００が、ヒータなどによって所定の温度まで予備加熱される。その後、ボート１０が加熱室２１からチャンバー２０内に搬送されて、基板１００に薄膜が形成される。   When the film forming apparatus 1 is a plasma CVD apparatus, a heating chamber 21 for preheating the substrate 100 before film formation is often prepared as shown in FIG. In this case, the substrate 100 mounted on the boat 10 stored in the heating chamber 21 is preheated to a predetermined temperature by a heater or the like. Thereafter, the boat 10 is transferred from the heating chamber 21 into the chamber 20, and a thin film is formed on the substrate 100.

例えば結晶系太陽電池、反射防止膜、窒化膜などの成膜処理では、基板１００の温度を予め決められた設定温度にした状態で、基板１００に膜を形成する。そのため、上記のように、チャンバー２０に格納される前に加熱室２１で基板１００を予備加熱する。そして、設定温度に達した基板１００がチャンバー２０に格納され、底面ヒータ３０と側面ヒータ５０によって基板プレート１１に上下方向の温度差が生じない状態を維持し、且つ予備加熱された基板１００の基板温度の低下が抑制され、基板１００の成膜処理が行われる。   For example, in a film forming process such as a crystalline solar cell, an antireflection film, or a nitride film, a film is formed on the substrate 100 in a state where the temperature of the substrate 100 is set to a predetermined set temperature. Therefore, the substrate 100 is preheated in the heating chamber 21 before being stored in the chamber 20 as described above. Then, the substrate 100 that has reached the set temperature is stored in the chamber 20, the state in which the temperature difference in the vertical direction is not generated in the substrate plate 11 by the bottom heater 30 and the side heater 50, and the substrate 100 is preheated. The decrease in temperature is suppressed, and the film formation process of the substrate 100 is performed.

なお、複数のボート１０を用いて図４に示す成膜装置１により成膜処理を行う場合には、チャンバー２０内で基板１００の成膜処理を行っている間に、次に成膜処理する基板１００を加熱室２１で予備加熱することができる。つまり、成膜処理の待ち時間の間に基板１００を予備加熱することにより、成膜装置１のスループットが向上する。   In the case where the film forming process is performed by the film forming apparatus 1 illustrated in FIG. 4 using a plurality of boats 10, the film forming process is performed next while the film forming process of the substrate 100 is performed in the chamber 20. The substrate 100 can be preheated in the heating chamber 21. That is, by preheating the substrate 100 during the waiting time of the film forming process, the throughput of the film forming apparatus 1 is improved.

以上に説明したように、本発明の実施形態に係る成膜装置１では、基板１００が搭載されたボート１０の上下方向の温度差が抑制されるように底面ヒータ３０の設定温度が制御されて、成膜処理が行われる。このため、成膜装置１によれば、成膜処理中における基板１００の上下方向の温度差を抑制できる。したがって、プロセスガス２００の分布の均一性が向上し、基板１００上に形成された膜の膜厚分布を均一にできる。   As described above, in the film forming apparatus 1 according to the embodiment of the present invention, the set temperature of the bottom heater 30 is controlled so that the temperature difference in the vertical direction of the boat 10 on which the substrate 100 is mounted is suppressed. A film forming process is performed. For this reason, according to the film forming apparatus 1, the temperature difference in the vertical direction of the substrate 100 during the film forming process can be suppressed. Therefore, the uniformity of the distribution of the process gas 200 is improved, and the film thickness distribution of the film formed on the substrate 100 can be made uniform.

（その他の実施形態）
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

例えば、上記の実施形態ではチャンバー２０が円筒形状である例を示したが、チャンバー２０は断面が矩形の筐体であってもよい。   For example, although an example in which the chamber 20 has a cylindrical shape has been described in the above embodiment, the chamber 20 may be a casing having a rectangular cross section.

このように、本発明はここでは記載していない様々な実施形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。   As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

１…成膜装置
１０…ボート
１１…基板プレート
１２…底板
２０…チャンバー
２１…加熱室
３０…底面ヒータ
４０…制御装置
５０…側面ヒータ
６０…ガス供給装置
７０…カソード電極
８０…交流電源
９０…ガス排気装置
１００…基板
２００…プロセスガス DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 10 ... Boat 11 ... Substrate plate 12 ... Bottom plate 20 ... Chamber 21 ... Heating chamber 30 ... Bottom heater 40 ... Control device 50 ... Side heater 60 ... Gas supply device 70 ... Cathode electrode 80 ... AC power supply 90 ... Gas Exhaust device 100 ... Substrate 200 ... Process gas

Claims (9)

処理対象の基板が縦方向に搭載された基板プレートを有するボートが格納されるチャンバーと、
前記チャンバー内において前記ボートの底面を加熱する底面ヒータと、
前記基板プレートの下部と上部との温度差が一定値以下になるように前記底面ヒータの設定温度を制御する制御装置と、
前記チャンバー内において前記ボートを側面から加熱する側面ヒータと、
前記チャンバー内にプロセスガスを供給するガス供給装置と
を備え、前記プロセスガスに含まれる原料を主成分とする薄膜を前記基板上に形成することを特徴とする成膜装置。 A chamber for storing a boat having a substrate plate on which substrates to be processed are mounted in a vertical direction;
A bottom heater for heating the bottom surface of the boat in the chamber;
A control device for controlling a set temperature of the bottom heater so that a temperature difference between a lower portion and an upper portion of the substrate plate is a certain value or less;
A side heater for heating the boat from the side in the chamber;
A film supply apparatus for supplying a process gas into the chamber, and forming a thin film mainly comprising a raw material contained in the process gas on the substrate. 前記制御装置が、予め得られた前記基板の上部と下部の温度差と前記設定温度との関係を用いて、成膜工程中の前記底面ヒータの設定温度を制御することを特徴とする請求項１に記載の成膜装置。   The control device controls a set temperature of the bottom heater during a film forming process using a relationship between a preset temperature difference between the upper and lower portions of the substrate and the set temperature. 2. The film forming apparatus according to 1. 前記チャンバー内で前記基板と対向して配置されたカソード電極と、
前記ボートと前記カソード電極間に交流電力を供給して、前記基板と前記カソード電極間において前記プロセスガスをプラズマ状態にする交流電源と
を更に備えることを特徴とする請求項１又は２に記載の成膜装置。 A cathode electrode disposed opposite to the substrate in the chamber;
3. The AC power supply according to claim 1, further comprising: an AC power supply configured to supply AC power between the boat and the cathode electrode to bring the process gas into a plasma state between the substrate and the cathode electrode. Deposition device. 前記ガス供給装置が、前記基板プレートの下部から上部に沿って前記プロセスガスを供給することを特徴とする請求項１乃至３のいずれか１項に記載の成膜装置。   4. The film forming apparatus according to claim 1, wherein the gas supply apparatus supplies the process gas from a lower part to an upper part of the substrate plate. 前記チャンバーに格納される前に、前記基板が搭載された前記ボートを加熱する加熱室を更に備えることを特徴とする請求項１乃至４のいずれか１項に記載の成膜装置。   The film forming apparatus according to claim 1, further comprising a heating chamber that heats the boat on which the substrate is mounted before being stored in the chamber. 処理対象の基板が縦方向に搭載された基板プレートを有するボートをチャンバーに格納するステップと、
前記基板プレートの下部と上部との温度差が一定値以下になるように設定温度が制御された底面ヒータによって、前記チャンバー内において前記ボートの底面を加熱するステップと、
前記底面ヒータによって前記ボートの底面を加熱しながら、前記ボートを側面から加熱するステップと、
前記チャンバー内にプロセスガスを供給するステップと
を含み、前記プロセスガスに含まれる原料を主成分とする薄膜を前記基板上に形成することを特徴とする成膜方法。 Storing a boat having a substrate plate on which a substrate to be processed is mounted in a vertical direction in a chamber;
Heating the bottom surface of the boat in the chamber by a bottom surface heater whose temperature is controlled so that a temperature difference between the lower portion and the upper portion of the substrate plate is a certain value or less;
Heating the boat from the side while heating the bottom of the boat by the bottom heater;
Supplying a process gas into the chamber, and forming a thin film mainly comprising a raw material contained in the process gas on the substrate. 予め得られた前記基板の上部と下部の温度差と前記設定温度との関係を用いて、成膜工程中の前記底面ヒータの設定温度が制御されることを特徴とする請求項６に記載の成膜方法。   The set temperature of the bottom heater during the film forming process is controlled using a relationship between the temperature difference between the upper and lower portions of the substrate obtained in advance and the set temperature. Film forming method. 前記基板プレートの下部から上部に沿って前記プロセスガスを供給することを特徴とする請求項６又は７に記載の成膜方法。   The film forming method according to claim 6, wherein the process gas is supplied from a lower part to an upper part of the substrate plate. 前記ボートが前記チャンバーに格納される前に、前記基板が搭載された前記ボートを加熱するステップを更に備えることを特徴とする請求項６乃至８のいずれか１項に記載の成膜方法。   The film forming method according to claim 6, further comprising a step of heating the boat on which the substrate is mounted before the boat is stored in the chamber.
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