CN103890229B - Plasma film forming apparatus - Google Patents
Plasma film forming apparatus Download PDFInfo
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- CN103890229B CN103890229B CN201180072547.7A CN201180072547A CN103890229B CN 103890229 B CN103890229 B CN 103890229B CN 201180072547 A CN201180072547 A CN 201180072547A CN 103890229 B CN103890229 B CN 103890229B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a kind of plasma film forming apparatus, possess: chamber, moved into substrate fixer, substrate fixer has mounting surface, and this mounting surface carries substrate; Cathode electrode, configures in the mode relative with mounting surface, and above-mentioned mounting surface configures in chamber, at above-below direction with extending; Gas supply device, is directed between substrate fixer in chamber and cathode electrode by process gas; And AC power, alternating electromotive force is supplied between substrate fixer and cathode electrode, make process gas reach plasmoid between substrate fixer and cathode electrode, the film-shaped of raw material contained in process gas as principal constituent is formed on substrate.
Description
Technical field
The invention relates to a kind of plasma body (plasma) film deposition system, this plasma film forming apparatus forms plasma body and carrys out film forming.
Background technology
In the manufacturing step of semiconducter device (device), due to easily accurately to the advantage that technique (process) controls, so use plasma film forming apparatus in film formation step.Such as, as plasma film forming apparatus, there will be a known plasma activated chemical vapour deposition (ChemicalVaporDeposition, CVD) device.
In plasma CVD equipment, by High frequency power etc., unstripped gas is carried out plasmarized, then, on substrate, form film by chemical reaction.Proposed following plasma CVD equipment, this plasma CVD equipment has prepared multiple battery lead plate, substrate is configured at each battery lead plate, makes processing power improve (such as with reference to patent documentation 1) whereby.
Prior art document
Patent documentation
Patent documentation 1: International Patent Publication No. 02/20871 brochure
Summary of the invention
Invent problem to be solved
In order to equably and with high film forming efficiency, the whole substrate in chamber (chamber) forms film, adopts following method: the shower electrode (showerelectrode) using self-electrode internal feed process gas.But, in order to make process gas equably from shower electrode ejection, process gas must be made to disperse equably in electrode interior.Especially, in time substrate being equipped on respectively the situation of multiple electrode, in order to make above-mentioned process gas disperse equably, shower electrode must be set to large-scale shower electrode.As a result, there is the problem making plasma film forming apparatus maximize.
Because the problems referred to above point, the object of the invention is to: provide plasma film forming apparatus, this plasma film forming apparatus efficiency can form uniform film in substrate well, and inhibits maximization.
The means of dealing with problems
According to an embodiment of the invention, provide a kind of plasma film forming apparatus, comprising: chamber, moved into substrate fixer, substrate fixer has mounting surface, and this mounting surface carries substrate; Cathode electrode, configures in the mode relative with mounting surface, and above-mentioned mounting surface configures in chamber, at above-below direction with extending; Gas supply device, is directed between substrate fixer in chamber and cathode electrode by process gas; And AC power, alternating electromotive force is supplied between substrate fixer and cathode electrode, make process gas reach plasmoid between substrate fixer and cathode electrode, the film-shaped of raw material contained in process gas as principal constituent is formed on substrate.
The effect of invention
According to the present invention, can provide plasma film forming apparatus, this plasma film forming apparatus efficiency can form uniform film in substrate well, and inhibits maximization.
Accompanying drawing explanation
Fig. 1 is the mode chart of the formation of the plasma film forming apparatus representing embodiments of the present invention.
Fig. 2 is the mode chart of the example representing the substrate fixer used in the plasma film forming apparatus of embodiments of the present invention.
Fig. 3 is the model utility structural map of the example of the cathode electrode of the plasma film forming apparatus representing embodiments of the present invention.
Fig. 4 is the model utility structural map of the example of the cathode electrode representing comparative example.
Fig. 5 is the mode chart of the example of the cathode electrode of the plasma film forming apparatus representing embodiments of the present invention.
Fig. 6 is the mode chart in order to be described the introduction method of the process gas in the plasma film forming apparatus of embodiments of the present invention.
Fig. 7 is the mode chart in order to be described the collocation method of the gas supplying-nozzle in the plasma film forming apparatus of embodiments of the present invention.
Fig. 8 is the mode chart in order to be described the method for loading of the substrate in the plasma film forming apparatus of embodiments of the present invention.
Fig. 9 (a) ~ Fig. 9 (c) is the mode chart of the shape example of the gas supplying-nozzle of the plasma film forming apparatus representing embodiments of the present invention, figure shown in the top of Fig. 9 (a) ~ Fig. 9 (c) is orthographic plan, and the figure shown in below is the sectional view in the I-I direction along orthographic plan.
Figure 10 is the mode chart in order to be described the method for exhausting in the plasma film forming apparatus of embodiments of the present invention.
Figure 11 is the mode chart in order to be described other method for exhausting in the plasma film forming apparatus of embodiments of the present invention.
Figure 12 is the mode chart of the formation of the plasma film forming apparatus of the variation representing embodiments of the present invention.
Figure 13 is the mode chart of the formation of the plasma film forming apparatus of other variation representing embodiments of the present invention.
Figure 14 is the mode chart of the formation of the plasma film forming apparatus of other variation representing embodiments of the present invention.
Figure 15 is the mode chart representing the formation plasma film forming apparatus of embodiments of the present invention being applied to the example of the filming chamber of straight-line type film deposition system.
The mode chart that Figure 16 is the chamber of the plasma film forming apparatus of embodiments of the present invention when being drum.
Figure 17 is the mode chart of the constitute example of the heating chamber of the plasma film forming apparatus representing embodiments of the present invention.
Figure 18 is the mode chart representing the formation plasma film forming apparatus of embodiments of the present invention being applied to other example of the filming chamber of straight-line type film deposition system.
Embodiment
Then, with reference to drawing, embodiments of the present invention are described.In the record of following drawing, same or similar symbol is enclosed to same or similar part.But should notice, drawing is the drawing of model utility.Again, embodiment shown below is: illustrate the device in order to be specialized by technological thought of the present invention or method, not by the structure of the constituent part of embodiments of the present invention, configuration etc. specifically for following structure, configuration etc.Embodiments of the present invention in the scope of claims, can add various change.
As shown in Figure 1, the plasma film forming apparatus 10 of embodiments of the present invention comprises: chamber 20, has moved into substrate fixer 11(substrateholder), this substrate fixer 11 has mounting surface 110, and this mounting surface 110 carries substrate 1; Cathode electrode 12, is configured in chamber 20; Gas supply device 13, is directed between substrate fixer 11 in chamber 20 and cathode electrode 12 by process gas 100; And AC power 14, alternating electromotive force is supplied between substrate fixer 11 and cathode electrode 12, makes process gas 100 reach plasmoid between substrate fixer 11 and cathode electrode 12.Cathode electrode 12 configures in the mode relative with mounting surface 110, and this mounting surface 110 configures in chamber 20, towards above-below direction with extending.According to plasma film forming apparatus 10, the film-shaped of raw material contained in process gas 100 as principal constituent is formed on substrate 1.
In plasma film forming apparatus 10, use substrate fixer 11 as anode (anode) electrode.In the example shown in Fig. 1, substrate fixer 11 is ground connection.
Substrate fixer 11 such as can adopt following structure, that is: vertical with mounting surface 110 section is comb shape shape (combshaped).That is can adopt substrate fixer 11 as shown in Figure 2, this substrate fixer 11 comprises: multiple substrate mounting plate 111, is defined as interarea by mounting surface 110 respectively, and spaced and configure abreast; And retaining plate 112, the bottom respective to substrate mounting plate 111 is fixed.In Fig. 2, illustrate the example that substrate mounting plate 111 is 5 pieces, but the block number of substrate mounting plate 111 is not limited to 5 pieces.
Now, as shown in Figure 1, multiple substrate mounting plate 111 is: with multiple cathode electrode 12 alternately and make outermost for the mode of substrate mounting plate 111 and arranging.Mounting surface 110 is defined as respectively: the face relative with cathode electrode 12 of substrate mounting plate 111.
In plasma film forming apparatus 10, the substrate fixer 11 under the state being equipped with substrate 1 is moved to chamber 20.Then, the process gas 100 comprising the unstripped gas of film forming is directed in chamber 20 from gas supply device 13.
After process gas 100 is imported, by gas barrier 15, the pressure in chamber 20 is adjusted.After by the pressure adjusting of the process gas 100 in chamber 20 being the gaseous tension of regulation, by AC power 14, the alternating electromotive force of regulation is supplied between cathode electrode 12 and substrate fixer 11.Whereby, make the process gas 100 in chamber 20 plasmarized.Make substrate 1 be exposed to formed plasma body, whereby, raw material contained in unstripped gas is formed in the surface of exposing of substrate 1 as the film-shaped desired by principal constituent.Moreover, also by illustrating elliptical substrate heater, the temperature of the substrate 1 in film forming process can be set.The temperature of the substrate 1 in film forming process is set as the temperature specified, whereby, film forming speed can be made to accelerate, maybe can make the Quality advance of film.
In plasma film forming apparatus 10, can by suitably selecting unstripped gas to form desired film.Such as, can be formed on substrate 1: silicon semiconductor film, silicon nitride film, silicon oxide film, silicon oxynitride film and C film etc.Specifically, ammonia (NH is used
3) gas and silane (SiH
4) mixed gas of gas, on substrate 1, form silicon nitride (SiN) film.Or, use silane (SiH
4) gas and nitrous oxide (N
2o) mixed gas of gas, forms silicon oxide (SiO on substrate 1
x) film.
Such as, be preferably as shown in Figure 3, be formed with communicating pores 120 in cathode electrode 12, this communicating pores 120 in a thickness direction, give through by cathode electrode 12.The opening portion of communicating pores 120 is: in the mode that the mounting surface 110 with substrate mounting plate 111 is relative, and be formed at the surface of cathode electrode 12.Exemplified with following situation in Fig. 3, that is, the substrate mounting plate 111 of substrate fixer 11 is 3 pieces, and cathode electrode 12 is 2 pieces.
The cathode electrode 12 being provided with opening portion in surface plays function as hollow cathode electrode (hollowcathodeelectrode), and this hollow cathode electrode produces hollow cathode discharge.In hollow cathode discharge process, by the inside of electrons in the cathode electrode 12 without electric field, whereby, form the space of high-density electronics, above-mentioned electronics is because ion (ion) is incident upon the surface of cathode electrode 12 and the electronics launched from cathode electrode 12.Invade and carry out free repeatedly to the gas molecule in high electron density region and be combined again, and in again in conjunction with time, be sighted the light sending high brightness.The precursor produced in high density plasma is free radical species (radicalspecies), regardless of electropotential, this precursor all can towards the diffuse outside of communicating pores 120, and the surface of the substrate 1 configured in the mounting surface 110 of substrate mounting plate 111 forms film.
On the other hand, in the cathode electrode 12A shown in Fig. 4, process gas 100 is released from recess 401 equably, this recess produces high density plasma by hollow cathode discharge, cathode electrode 12A shown in above-mentioned Fig. 4 adopts and constructs from the shower electrode of internal feed process gas 100, and is formed with recess 401 in surface.Whereby, can in the upper homogeneity obtaining plasma body of whole of cathode electrode 12A.
But, for the cathode electrode 12A shown in Fig. 4, be difficult to equably process gas 100 is supplied to multiple recess 401, and the flow or pressure etc. of the opening diameter of gas vent 402 or length, process gas 100, there is various restriction.And the diameter due to gas vent 402 is the atomic little diameter of about 0.3mm ~ 0.4m, therefore, easily causes blocking.When process gas 100 being imported because of blocking, can not hollow cathode discharge be produced in the recess 401 blocked, therefore, the homogeneity of the electric discharge on whole of cathode electrode 12A cannot be maintained.
In contrast, for the cathode electrode 12 shown in Fig. 3, via cathode electrode 12, process gas 100 is not imported.The diameter of communicating pores 120 is greater than the diameter in the hole needed for shower electrode fully, therefore, without the need to worrying blocking, and, safeguard that (maintenance) is also easy.The diameter of communicating pores 120 is about 3.8mm ~ 8.0m, such as, be 5mm.
Again, the plasma body excited respectively on two faces of the cathode electrode 12 shown in Fig. 3 is: link by communicating pores 120.Therefore, the deep or light difference of the plasma density on two faces of cathode electrode 12 is corrected naturally, can produce the plasma space of even density in two of cathode electrode 12 face.
As mentioned above, adopt Multihollow negative electrode (multihollowcathode) structure forming multiple communicating pores 120 in cathode electrode 12, whereby, uniform Multihollow electric discharge (multihollowdischarge) can be obtained in two of cathode electrode 12 face.So-called " Multihollow electric discharge " refers to: after the hollow cathode discharge resulted from respectively in each communicating pores 120 merges, the electric discharge produced in the surface of cathode electrode 12.Whereby, uniform high density plasma can be realized in the surface of cathode electrode 12.As a result, unstripped gas is decomposed by efficiency well, thus at a high speed, big area and form film equably on substrate 1.
Communicating pores 120 is preferably: the surface being configured at cathode electrode 12 densely.Configure communicating pores 120 with density high as far as possible, whereby, easily can form uniform high electron density electric field in two faces of cathode electrode 12.The example being formed with the surface of the cathode electrode 12 of the opening portion of communicating pores 120 is represented in Fig. 5.
Moreover the internal surface of the communicating pores 120 of cathode electrode 12 is preferably the material adopting secondary electron emission rate good, and carries out surface treatment.Such as, cheap, be easy to process and be easy to carry out the carbon material etc. safeguarded such as cleaning, be suitable for the material as cathode electrode 12.Such as, by hydrofluoric acid treatment, the cathode electrode 12 of carbon material can be cleaned.Again, by use carbon material, distortion can not be produced because of the high temperature in plasma treatment step.Or, easily form the aluminium alloy etc. of metal oxide film, also for being suitable for the material of hollow cathode electrode.In addition, the carbon of carbon fiber-containing, Stainless Steel Alloy, copper, copper alloy, glass and pottery etc. can be used in cathode electrode 12.Or, also can utilize that alumite (alumite) processes, plating and melt-blown (thermalspraying), come to implement coating (coating) to above-mentioned materials.
For being used as the substrate fixer 11 of anode electrode, also suitably can use carbon material.Again, the carbon of carbon fiber-containing, aluminium alloy, Stainless Steel Alloy, copper, copper alloy, glass and pottery etc. can be used in substrate fixer 11.Or, also can utilize alumite process, plating and melt-blown, come to implement coating to above-mentioned materials.
Be preferably in chamber 20, process gas 100 is directed into upward between substrate fixer 11 and cathode electrode 12 from below.Imported by process gas 100 by from below, plasmarized gas molecule, the free radical particle of light specific gravity flow as top, and naturally flow upward in the surface of cathode electrode 12.Therefore, even if do not use the structure of the complexity as shower electrode, also equably process gas can be supplied to the surface of cathode electrode 12.
Moreover the surface of cathode electrode 12 is preferably: be flat to the degree represented by finish mark (finishmark) " ▽ ▽ ▽ ", flow swimmingly to make process gas 100.That is be preferably maximum height Ry and be less than 6.3S, 10 mean roughness Rz are less than 6.3Z, and arithmetic average roughness Ra is less than 1.6a.The surfaceness of cathode electrode 12 is reduced, whereby, the growth rate of the film being formed at substrate 1 can be improved.
Similarly, the surface of substrate fixer 11 is also preferably: be flat to the degree represented by finish mark " ▽ ▽ ".That is be preferably maximum height Ry and be less than 25S, 10 mean roughness Rz are less than 25Z, and arithmetic average roughness Ra is less than 6.3a.
In order to process gas 100 is imported upward from below, as shown in Figure 6, gas supplying-nozzle (nozzle) 130 along cathode electrode 12 bottom surface and be configured at immediately below cathode electrode 12, this gas supplying-nozzle 130 makes the process gas 100 of gas supply device 13 spray.Process gas 100 is sprayed towards the bottom of cathode electrode 12 from gas supplying-nozzle 130, whereby, substantially uniformly process gas 100 can be supplied to two faces of cathode electrode 12.
Now, when as shown in Figure 2, when substrate fixer 11 is the shape comprising retaining plate 112, as shown in Figure 6, gas introducing port 113 is between substrate mounting plate 111 and be formed at retaining plate 112, and retaining plate 112 gives through at above-below direction by this gas introducing port 113.Process gas 100 via gas introducing port 113, and is directed between substrate mounting plate 111 and cathode electrode 12 from the below of chamber 20.Moreover as shown in Figure 6, when in chamber 20, when support substrate fixer 11 by support table 30, form entrance hole 31 in the position corresponding with gas introducing port 113 of support table 30, support table 30 gives through at above-below direction by this entrance hole 31.
When there is multiple gas supplying-nozzle 130, as shown in Figure 7, gas supplying-nozzle 130 arranges along the bottom surface of cathode electrode 12.As carried out shown in illustrated Fig. 8 by cathode electrode 12 to substrate mounting plate 111, mounting surface 110 is defined as respectively: the face relative with cathode electrode 12 of substrate mounting plate 111.Whereby, substrate 1 configures relatively with cathode electrode 12.
By the shape example of the ejiction opening of gas supplying-nozzle 130, be shown in Fig. 9 (a) ~ Fig. 9 (c).Fig. 9 (a) is following example, that is: form groove along diameter in the front end of the gas supplying-nozzle 130 of drum, and ejiction opening is configured at the centre portions of groove.Fig. 9 (b) is following example, that is: arrange recess in the front end of the gas supplying-nozzle 130 of drum, and ejiction opening is configured at the centre portions of the bottom surface of recess.Fig. 9 (c) is following example, that is: ejiction opening is configured at the centre portions of the front end of the gas supplying-nozzle 130 of drum.
When process gas 100 is the gas mixed multiple gases, the process gas 100 that whole gas is mixed can be supplied from gas supplying-nozzle 130, also can for often kind of gas, the difference supply gas from different gas supplying-nozzles 130.
The constitute example of gas barrier 15 is shown in Figure 10.Gas barrier 15 shown in Figure 10 is configured at the top illustrating elliptical chamber 20.Gas barrier 15 comprises: the 1st exhaust adjustment plate 151, is configured at the top of substrate fixer 11 and cathode electrode 12; And the 2nd exhaust adjustment plate 152 of shaped as frame shape, configure to be positioned at the mode of the below of the outer edge of the 1st exhaust adjustment plate 151.As shown in Figure 10, the process gas 100 flowing into the top of substrate fixer 11 and cathode electrode 12 is: be vented by the 1st exhaust adjustment plate 151 and the 2nd gap adjusting plate 152, and be expelled to the outside of chamber 20 from the outer edge of the 1st exhaust adjustment plate 151.Gas barrier 15 controls by the 1st exhaust adjustment plate 151 and the 2nd size being vented the gap adjusting plate 152, adjusts free air delivery.
Other constitute example of gas barrier 15 is represented in Figure 11.Gas barrier 15 shown in Figure 11 comprises: multiple venting hole 150, and above-mentioned multiple venting hole 150 is configured at the top illustrating elliptical chamber 20, and carries out through at above-below direction.Process gas 100 via venting hole 150 towards the external exhaust gas of chamber 20.Gas barrier 15 controls by the opening degree of venting hole 150, adjusts free air delivery.
Plasma film forming apparatus 10 according to the embodiment of the present invention, is used as anode electrode by substrate fixer 11, whereby, the film forming face of substrate 1 can be made vertical and be configured in chamber 20 by substrate 1.Therefore, multiple cathode electrode 12 is configured in chamber 20.Therefore, plasma film forming apparatus 10 shown in Fig. 1 is compared with following plasma film forming apparatus, a large amount of substrates 1 can be accommodated in simultaneously in chamber 20, processing power can be made to improve significantly, above-mentioned plasma film forming apparatus is: the substrate 1 making film forming face towards above-below direction is equipped on dull and stereotyped substrate carrier etc., thus carries out film forming process.
And, by adopting the cathode electrode 12 being formed with communicating pores 120, in two of cathode electrode 12 face, can stably produce even and highdensity plasma body.Now, regardless of the frequency of the alternating electromotive force that AC power 14 supplies, all uniform high density plasma can be produced in large area.Even if the frequency setting of alternating electromotive force AC power 14 supplied is such as about 60Hz ~ 27MHz, even and highdensity plasma body also can be produced.That is, without the need to using expensive AC power, the alternating electromotive force of this AC power supply ultra-high frequency (VeryHighFrequency, VHF) frequency band.For plasma film forming apparatus 10, such as namely be convenient to the radio frequency (RadioFrequency of the low frequency as 250KHz, RF) under frequency band, also can obtain the high density plasma equal or more with previous plasma film forming apparatus, above-mentioned previous plasma film forming apparatus uses the AC power of VHF frequency band.
As a result, can at a high speed and form large-area film equably on substrate 1.That is according to plasma film forming apparatus 10, the thickness of the film of formation, the homogeneity of film quality improve, and improve film forming speed.
Again, plasma film forming apparatus 10 is without the need to using complex structure and must forming the shower electrode of minute aperture.Therefore, without the need to the maintenance frequently such as shower electrode.And shower electrode must maximize, to make process gas 100 disperse equably, in contrast, plasma film forming apparatus 10 is without the need to maximizing.Therefore, according to plasma film forming apparatus 10, can provide: whole substrates of efficiency well in chamber 20 can form uniform film, and inhibit the plasma film forming apparatus of maximization.
And, compared with using the plasma film forming apparatus of following shower electrode, short during the manufacture of plasma film forming apparatus 10, and fine ratio of product improves, above-mentioned shower electrode must process thousands of above minute aperture.Therefore, the manufacturing cost of plasma film forming apparatus 10 is suppressed.
The example be expressed as follows in Figure 12, that is: by the alternating electromotive force that AC power 14 exports, be supplied between substrate fixer 11 and cathode electrode 12 via pulse generator (pulsegenerator) 16.In the example shown in Figure 12, the output of pulse generator 16 is supplied to cathode electrode 12, and substrate fixer 11 is ground connection.Stop supply alternating electromotive force with the fixing cycle, whereby, in chamber 20, stably form plasma body.Reason is: in the supply process of alternating electromotive force, arrange interval, and whereby, the temperature of electronics can decline, and the stability of electric discharge improves.But if (off) time that will disconnect sets long, then power (power) efficiency can decline, and therefore should be noted that.
Such as, conducting (on) time of supply alternating electromotive force is set to 600 microseconds, by stopping be set to 50 microseconds the turn-off time of supply alternating electromotive force, to make ON time and turn-off time alternately recurrent mode, alternating electromotive force is supplied between substrate fixer 11 and cathode electrode 12.Moreover, be preferably ON time is set in 100 microsecond ~ 1000 microseconds scope in, turn-off time is set in the scope of 10 microsecond ~ 100 microseconds.
In the above described manner, Pulse Width Control is carried out to the supply towards the alternating electromotive force between substrate fixer 11 and cathode electrode 12, make the supply periodically conducting of alternating electromotive force, disconnection, whereby, the generation of paradoxical discharge can be suppressed.
The example be expressed as follows in Figure 13, that is: except the AC power 14 being installed on cathode electrode 12, be installed on the substrate fixer 11 as anode electrode in addition using AC power 17.Alternating electromotive force is supplied to anode electrode, whereby, the film quality of the film being formed at substrate 1 can be made to improve.The frequency of the alternating electromotive force that AC power 17 supplies is: the frequency of the alternating electromotive force that also can supply with AC power 14 is equal, or the frequency of the alternating electromotive force supplied lower than this AC power 14.Such as, the frequency setting of alternating electromotive force AC power 17 supplied is about 60Hz ~ 27MHz.
Moreover, do not supply alternating electromotive force from AC power 14, and only supply alternating electromotive force from AC power 17, whereby, plasma clean (plasmacleaning) can be implemented to substrate 1.Such as, be directed into by the gas of sputter in chamber 20, one side supplies alternating electromotive force from AC power 17, and one side carries out sputter-etch (sputteretching), comes whereby to clean substrate 1.
Moreover, as shown in figure 14, can split the output of AC power 14 by power divider (powersplitter) 18, the alternating electromotive force of segmentation gained is supplied to cathode electrode 12 and substrate fixer 11 respectively.Whereby, compared with Figure 13, the quantity of AC power can be made to reduce.The electric power being supplied to substrate fixer 11 can be less than the electric power being supplied to cathode electrode 12.Such as, the alternating electromotive force of 90% ~ 100% is supplied to cathode electrode 12, the alternating electromotive force of 10% ~ 0% is supplied to substrate fixer 11.
Plasma film forming apparatus 10 shown in Fig. 1 such as can be used as the filming chamber of array (inline) formula film deposition system.Represent the example of straight-line type film deposition system 200 in Figure 15, this straight-line type film deposition system 200 comprises: put into/heating chamber 210, filming chamber 220 and take out these 3 rooms of room 230.
In straight-line type film deposition system 200, the substrate fixer 11 being equipped with substrate 1 is placed into putting into/heating chamber 210.In putting into/heating chamber 210, after till substrate 1 being preheated to the temperature of regulation, via gate (gate) 240A of open and close type, by substrate fixer 11 from putting into/heating chamber 210 transports to filming chamber 220.In filming chamber 220, after substrate 1 forms film, via the gate 240B of open and close type, substrate fixer 11 self film-formed room 220 is transported to taking-up room 230.Then, from taking out room 230, substrate fixer 11 is taken out.By illustrating elliptical carrying device, between each room of straight-line type film deposition system 200, substrate fixer 11 is transported.
Moreover as shown in figure 16, chamber 20 is preferably drum.By being set to drum, chamber 20 can have the sufficient intensity as vacuum vessel.Therefore, even if make the lower thickness of chamber 20, when comprising heating, still cheapness can be utilized and simple structure realizes sufficient intensity.
Represent in Figure 17 and put into/the constitute example of heating chamber 210.Put into/heating chamber 210 comprises: well heater (heater) 211A, is configured at the upper and lower of substrate fixer 11; And groove well heater (slotheater) 211B, and substrate mounting plate 111 is in being configured between substrate mounting plate 111 abreast.Substrate fixer 11 by support table 212 in putting into/heating chamber 210 supported.Moreover, between support table 212 and groove well heater 211B, be configured with thermal baffle 213.
Groove well heater 211B heats the substrate 1 that substrate fixer 11 and mounting surface 110 carry, and whereby, can prevent terminating between substrate 1 and substrate fixer 11 and produces temperature head.Such as, when one in the face of the temperature of substrate fixer 11 monitors, when one side preheats, can precision well the temperature of substrate 1 be adjusted.
Well heater 211A, groove well heater 211B can adopt: lamp well heater (lampheater), ceramic heater (ceramicsheater), sheathed heater (sheathheater) or induction heater etc.
In foregoing, illustrate the example of the straight-line type film deposition system 200 comprising 3 rooms, but also the plasma film forming apparatus 10 shown in Fig. 1 can be applied to as shown in figure 18, the straight-line type film deposition system 200 that comprises 2 rooms.In comprising heating chamber 211 with the straight-line type film deposition system 200 of these 2 rooms of filming chamber 220, in heating chamber 211, carry out putting into and taking-up of substrate fixer 11.In heating chamber 211, after putting into the substrate 1 of heating chamber 211 is preheated to the temperature of regulation, via the gate 241 of open and close type, substrate fixer 11 is transported to filming chamber 220.In filming chamber 220, after substrate 1 forms film, via gate 241, substrate fixer 11 is transported to heating chamber 211.Then, from heating chamber 211, substrate fixer 11 is taken out.Moreover, in the same manner as putting into shown in Figure 17/heating chamber 210, for the heating chamber 211 shown in Figure 18, be also preferably and groove well heater 211B is configured between substrate mounting plate 111.
As mentioned above, carry out notebook invention by embodiment, but should not be construed as and can limit the present invention as the discussion of a part for above-mentioned announcement and drawing.According to above-mentioned announcement, for the technician in art field, various alternate embodiments, example and application technology are obvious.
Such as, illustrated following example, that is: substrate fixer 11 comprises multiple substrate mounting plate 111 and retaining plate 112, but the shape of substrate fixer 11 is not limited thereto.Such as, substrate fixer 11 also can be single plate.
So, the present invention comprises the various embodiments etc. do not disclosed certainly herein.Therefore, technical scope of the present invention according to the above description, is only determined by the specific item of the invention of the scope of appropriate claims.
Utilizability in industry
Plasma film forming apparatus of the present invention can be used in the production of the semiconducter device forming film on substrate.
Claims (12)
1. a plasma film forming apparatus, is characterized in that comprising:
Chamber, has moved into substrate fixer, and aforesaid substrate fixer has mounting surface, and above-mentioned mounting surface carries substrate;
Cathode electrode, configure in the mode relative with above-mentioned mounting surface, above-mentioned mounting surface configures in above-mentioned chamber, at above-below direction with extending, above-mentioned cathode electrode comprises: the multiple communicating poress being provided with opening portion in the face relative with above-mentioned mounting surface, and above-mentioned cathode electrode produces hollow cathode discharge;
Gas supply device, is directed between aforesaid substrate fixer in above-mentioned chamber and above-mentioned cathode electrode by process gas; And
AC power, is supplied to alternating electromotive force between aforesaid substrate fixer and above-mentioned cathode electrode, makes above-mentioned process gas reach plasmoid between aforesaid substrate fixer and above-mentioned cathode electrode,
After the hollow cathode discharge resulted from described multiple communicating pores merges, produce Multihollow electric discharge in described cathode electrode, by raw material contained in above-mentioned process gas as the film of principal constituent, be formed on aforesaid substrate.
2. plasma film forming apparatus as claimed in claim 1, is characterized in that,
Above-mentioned process gas is directed into upward in above-mentioned chamber from below by above-mentioned gas feedway.
3. plasma film forming apparatus as claimed in claim 2, is characterized in that,
The gas supplying-nozzle that above-mentioned gas feedway configures from the bottom surface along above-mentioned cathode electrode, the bottom towards above-mentioned cathode electrode sprays above-mentioned process gas.
4. plasma film forming apparatus as claimed in claim 1, is characterized in that,
Aforesaid substrate fixer comprises: multiple substrate mounting plate,
Above-mentioned mounting surface is defined as interarea by above-mentioned multiple substrate mounting plate respectively, and spaced and configure abreast.
5. plasma film forming apparatus as claimed in claim 4, is characterized in that,
Above-mentioned multiple substrate mounting plate be with above-mentioned multiple cathode electrode alternately and make outermost for the mode of aforesaid substrate mounting plate and arranging, above-mentioned mounting surface is defined as respectively the face relative with above-mentioned cathode electrode of aforesaid substrate mounting plate.
6. plasma film forming apparatus as claimed in claim 4, is characterized in that,
Aforesaid substrate fixer comprises: retaining plate,
Above-mentioned retaining plate is fixed above-mentioned multiple substrate mounting plate bottom separately, and the gas introducing port through at above-below direction of above-mentioned retaining plate is formed between above-mentioned multiple substrate mounting plate,
Via above-mentioned gas entrance hole, above-mentioned process gas is directed between aforesaid substrate mounting plate and above-mentioned cathode electrode.
7. plasma film forming apparatus as claimed in claim 1, is characterized in that,
Above-mentioned chamber is drum.
8. plasma film forming apparatus as claimed in claim 4, characterized by further comprising: heating chamber,
Above-mentioned heating chamber, before form above-mentioned film on aforesaid substrate, holds aforesaid substrate fixer,
Above-mentioned heating chamber comprises groove well heater, and above-mentioned groove heater configuration, between above-mentioned multiple substrate mounting plate, heats the aforesaid substrate that aforesaid substrate fixer and above-mentioned mounting surface carry.
9. plasma film forming apparatus as claimed in claim 1, is characterized in that,
Aforesaid substrate fixer and above-mentioned cathode electrode at least any one comprises carbon.
10. plasma film forming apparatus as claimed in claim 1, is characterized in that,
About the surfaceness of above-mentioned cathode electrode, maximum height is below 6.3S.
11. plasma film forming apparatus as claimed in claim 1, is characterized in that,
In the surfaceness of aforesaid substrate fixer, maximum height is below 25S.
12. 1 kinds of plasma film forming apparatus, is characterized in that comprising:
Chamber, has moved into substrate fixer, and aforesaid substrate fixer has mounting surface, and above-mentioned mounting surface carries substrate;
Cathode electrode, configures in the mode relative with above-mentioned mounting surface, and above-mentioned mounting surface configures in above-mentioned chamber, at above-below direction with extending;
Gas supply device, the gas supplying-nozzle configured from the bottom surface along above-mentioned cathode electrode, bottom towards above-mentioned cathode electrode sprays above-mentioned process gas, is directed into upward between aforesaid substrate fixer in above-mentioned chamber and above-mentioned cathode electrode by above-mentioned process gas from below; And
AC power, is supplied to alternating electromotive force between aforesaid substrate fixer and above-mentioned cathode electrode, makes above-mentioned process gas reach plasmoid between aforesaid substrate fixer and above-mentioned cathode electrode,
By raw material contained in above-mentioned process gas as the film of principal constituent, be formed on aforesaid substrate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/071796 WO2013046286A1 (en) | 2011-09-26 | 2011-09-26 | Plasma film forming apparatus |
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| Publication Number | Publication Date |
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| CN103890229A CN103890229A (en) | 2014-06-25 |
| CN103890229B true CN103890229B (en) | 2015-12-16 |
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| CN201180072547.7A Expired - Fee Related CN103890229B (en) | 2011-09-26 | 2011-09-26 | Plasma film forming apparatus |
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| JP (1) | JP5768890B2 (en) |
| KR (1) | KR101650795B1 (en) |
| CN (1) | CN103890229B (en) |
| TW (1) | TWI494466B (en) |
| WO (1) | WO2013046286A1 (en) |
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| JP6065111B2 (en) * | 2013-05-24 | 2017-01-25 | 株式会社島津製作所 | Plasma processing equipment |
| JP2015015382A (en) * | 2013-07-05 | 2015-01-22 | 株式会社島津製作所 | Film deposition device and film deposition method |
| DE102015111144A1 (en) * | 2015-07-09 | 2017-01-12 | Hanwha Q.CELLS GmbH | Device for pairwise recording of substrates |
| CN109314054A (en) * | 2016-07-21 | 2019-02-05 | 株式会社国际电气 | The manufacturing method of plasma generating equipment, substrate processing device and semiconductor devices |
| HUE047152T2 (en) * | 2017-02-28 | 2020-04-28 | Meyer Burger Germany Gmbh | Electrode unit with an internal electric network for feeding high frequency voltage and carrier assembly for a plasma processing system |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
| CN111893455B (en) * | 2020-09-08 | 2023-10-03 | 河北美普兰地环保科技有限公司 | Metal substrate carbon nano film material manufacturing equipment and preparation method thereof |
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| US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
| JP2001192835A (en) * | 2000-01-11 | 2001-07-17 | Kanegafuchi Chem Ind Co Ltd | Substrate transfer cart used in in-line type plasma enhanced cvd system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3586197B2 (en) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | Plasma film forming equipment for thin film formation |
| WO2002020871A1 (en) | 2000-09-08 | 2002-03-14 | Centrotherm Elektrische Anlagen Gmbh + Co. | Plasma boat |
| JP4849316B2 (en) * | 2006-02-21 | 2012-01-11 | 株式会社Ｉｈｉ | Vacuum deposition system |
| JP2009164515A (en) * | 2008-01-10 | 2009-07-23 | Shimadzu Corp | Antireflection film forming method and solar cell |
| JP2009231385A (en) * | 2008-03-19 | 2009-10-08 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device |
| JP2011077323A (en) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | Method for forming silicon nitride film, and method for producing semiconductor memory device |
-
2011
- 2011-09-26 JP JP2013535647A patent/JP5768890B2/en not_active Expired - Fee Related
- 2011-09-26 CN CN201180072547.7A patent/CN103890229B/en not_active Expired - Fee Related
- 2011-09-26 WO PCT/JP2011/071796 patent/WO2013046286A1/en active Application Filing
- 2011-09-26 KR KR1020147001147A patent/KR101650795B1/en active IP Right Grant
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
| JP2001192835A (en) * | 2000-01-11 | 2001-07-17 | Kanegafuchi Chem Ind Co Ltd | Substrate transfer cart used in in-line type plasma enhanced cvd system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103890229A (en) | 2014-06-25 |
| TW201321550A (en) | 2013-06-01 |
| TWI494466B (en) | 2015-08-01 |
| WO2013046286A1 (en) | 2013-04-04 |
| JP5768890B2 (en) | 2015-08-26 |
| JPWO2013046286A1 (en) | 2015-03-26 |
| KR20140037226A (en) | 2014-03-26 |
| KR101650795B1 (en) | 2016-08-24 |
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