JP5759186B2 - 荷電粒子線描画装置及びデバイス製造方法 - Google Patents

荷電粒子線描画装置及びデバイス製造方法 Download PDF

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Publication number
JP5759186B2
JP5759186B2 JP2011009199A JP2011009199A JP5759186B2 JP 5759186 B2 JP5759186 B2 JP 5759186B2 JP 2011009199 A JP2011009199 A JP 2011009199A JP 2011009199 A JP2011009199 A JP 2011009199A JP 5759186 B2 JP5759186 B2 JP 5759186B2
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JP
Japan
Prior art keywords
charged particle
particle beam
drawing apparatus
region
catalyst
Prior art date
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Expired - Fee Related
Application number
JP2011009199A
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English (en)
Japanese (ja)
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JP2012151305A5 (enExample
JP2012151305A (ja
Inventor
茂 寺島
茂 寺島
貴博 中山
貴博 中山
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011009199A priority Critical patent/JP5759186B2/ja
Priority to US13/347,981 priority patent/US20120183905A1/en
Publication of JP2012151305A publication Critical patent/JP2012151305A/ja
Publication of JP2012151305A5 publication Critical patent/JP2012151305A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP2011009199A 2011-01-19 2011-01-19 荷電粒子線描画装置及びデバイス製造方法 Expired - Fee Related JP5759186B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011009199A JP5759186B2 (ja) 2011-01-19 2011-01-19 荷電粒子線描画装置及びデバイス製造方法
US13/347,981 US20120183905A1 (en) 2011-01-19 2012-01-11 Charged-particle beam drawing apparatus and article manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011009199A JP5759186B2 (ja) 2011-01-19 2011-01-19 荷電粒子線描画装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2012151305A JP2012151305A (ja) 2012-08-09
JP2012151305A5 JP2012151305A5 (enExample) 2014-03-06
JP5759186B2 true JP5759186B2 (ja) 2015-08-05

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JP2011009199A Expired - Fee Related JP5759186B2 (ja) 2011-01-19 2011-01-19 荷電粒子線描画装置及びデバイス製造方法

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US (1) US20120183905A1 (enExample)
JP (1) JP5759186B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
JP2014140009A (ja) * 2012-12-19 2014-07-31 Canon Inc 描画装置、及び物品の製造方法
JP2016082106A (ja) * 2014-10-17 2016-05-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム描画装置
WO2016103432A1 (ja) * 2014-12-26 2016-06-30 株式会社 日立ハイテクノロジーズ 複合荷電粒子線装置およびその制御方法
JP2017126674A (ja) * 2016-01-14 2017-07-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2023150799A (ja) * 2022-03-31 2023-10-16 株式会社日立ハイテク 荷電粒子ビーム装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4526858A (en) * 1982-01-11 1985-07-02 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating superconducting weak-links using electron beam lithography
EP0345097B1 (en) * 1988-06-03 2001-12-12 Canon Kabushiki Kaisha Exposure method and apparatus
JPH0696058B2 (ja) * 1989-07-14 1994-11-30 三井造船株式会社 剃切具
JP3923649B2 (ja) * 1997-09-18 2007-06-06 株式会社東芝 荷電粒子ビーム装置用吸着板、荷電粒子ビーム装置用偏向電極及び荷電粒子ビーム装置
JP2000323398A (ja) * 1999-05-14 2000-11-24 Sony Corp 荷電粒子線露光装置
US6635874B1 (en) * 2000-10-24 2003-10-21 Advanced Micro Devices, Inc. Self-cleaning technique for contamination on calibration sample in SEM
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2003115451A (ja) * 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法

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US20120183905A1 (en) 2012-07-19
JP2012151305A (ja) 2012-08-09

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