JP5757793B2 - Manufacturing apparatus for piezoelectric vibration device - Google Patents

Description

  The present invention relates to a piezoelectric vibration device manufacturing apparatus.

  Currently, examples of the piezoelectric vibration device include an oscillator and a crystal resonator. In this type of piezoelectric vibration device, the casing is formed of a substantially rectangular parallelepiped package. This package includes a ceramic base and a metal cap, and an airtightly sealed internal space is formed inside the package. Further, in this package, an electronic component element such as a crystal vibrating piece is bonded to an electrode pad on the base via a conductive bonding material.

  The manufacturing process for manufacturing this piezoelectric vibration device includes a sealing process using a sealing device that hermetically seals the quartz crystal vibrating piece with a base and a lid, and an airtight inspection using an airtight inspection device that performs an airtight inspection. Process. Among these, the airtight inspection process includes a gross leak inspection process that is a rough inspection using air and a helium leak inspection process that is a fine inspection using helium gas (see, for example, Patent Document 1).

The technology of Patent Document 1 has a turntable and performs a gross leak test and a helium leak test while carrying an electronic device (a crystal resonator, an IC chip, etc.) that is a target object of an airtight test in a ring shape.
JP 2007-278914 A

  Since the conventional airtight inspection process performs two inspection processes (gross leak inspection process and helium leak inspection process) as described above, it is necessary to secure a lot of manufacturing time in order to perform the airtight inspection process. Further, in the airtight inspection apparatus, it is necessary to decompress the inside of the airtight inspection apparatus in order to perform the airtight inspection, and it takes a lot of time to perform this decompression. In particular, in the helium leak inspection process, it takes time (for example, about 1 hour) to inject helium into the package.

  Thus, in the prior art including the technique of Patent Document 1, a lot of manufacturing time is required to perform the airtight inspection process.

  SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide an electronic device manufacturing apparatus that shortens the time required for an airtight inspection of a piezoelectric vibrating device in manufacturing the piezoelectric vibrating device.

In order to achieve the above object, an apparatus for manufacturing a piezoelectric vibration device according to the present invention forms an internal space by joining a plurality of sealing members, and one or more electrons including a piezoelectric vibration element in the internal space. In a piezoelectric vibration device manufacturing apparatus in which a component element is hermetically sealed and an external terminal for a piezoelectric vibration element connected to the piezoelectric vibration element is formed as an external terminal electrically connected to the outside. A sealing member is heated and joined to form an internal space in a vacuum state, an airtight sealing chamber for airtightly sealing the electronic component element in the internal space, an inspection chamber for inspecting an airtight state of the internal space of the piezoelectric vibration device, is provided to the laboratory, the first laboratory for testing the airtightness of the interior space of the piezoelectric vibrating device in a vacuum atmosphere, the piezoelectric vibrating device under high pressure atmosphere than the first laboratory Of which includes a second laboratory for testing the airtightness of the interior space, characterized in that conveying the piezoelectric vibrating device, wherein the hermetic seal chamber, the first laboratory, and the order of the second test chamber And

  According to the present invention, the vacuum environment (depressurized state) used for hermetic sealing of the piezoelectric vibration device can also be used for the inspection of the piezoelectric vibration device. It is possible to reduce the time required for the airtight inspection without requiring time for decompressing the internal space of the device. Furthermore, according to the present invention, it is not necessary to perform two inspection steps (gross leak inspection step and helium leak inspection step) as in the prior art, and in this respect also, the time required for the airtight inspection can be shortened. It becomes. In addition, according to the present invention, the hermetic sealing process of the piezoelectric vibrating device using the conventional sealing device and the hermetic testing process of the piezoelectric vibrating device using the hermetic inspection apparatus are realized by one manufacturing apparatus. As a result, it is suitable for shortening the manufacturing time of the piezoelectric vibrating device.

Further, according to the present invention, a piezoelectric vibration device having an inner space hermetically sealed in the hermetic sealing chamber may be piezoelectrically transferred from the hermetic sealing chamber to the first inspection chamber without being transported to the outside. Since the vibration device is transported and the airtight state of the internal space of the piezoelectric vibration device is inspected in the first inspection chamber, the airtight inspection can be performed in a vacuum atmosphere as it is. As a result, an accurate airtight inspection of the internal space can be performed. On the other hand, if the hermetic sealing and the hermetic inspection are separately performed as in the prior art, the piezoelectric vibration device is once carried out to the atmosphere. In the piezoelectric vibration device, the state of the internal space changes, and a normal airtight inspection cannot be performed.

In the above configuration, a preheating chamber for preheating the sealing member in a vacuum atmosphere is provided, and the piezoelectric vibration device is connected to the preheating chamber, the hermetic sealing chamber, the first inspection chamber, and the second inspection chamber. You may convey in order.

  In this configuration, when a plurality of sealing members are heat-melted and bonded by local heating, the preheating chamber is provided in the front chamber of the hermetic sealing chamber to be heat-bonded, so that the thermal strain of the sealing member And adverse effects of thermal stress can be suppressed. In addition, when a plurality of sealing members are heat-melted and joined by atmospheric heating, it is necessary to raise the sealing members more uniformly to a predetermined temperature. According to this configuration, since the preheating chamber is provided in the front chamber of the hermetic sealing chamber, the time for raising the sealing member more uniformly to a predetermined temperature in the hermetic sealing chamber can be reduced. Is possible. As a result, the preheating chamber is not provided, and the tact reduction of the sealing process is more preferable as compared with a manufacturing apparatus that heats only in the hermetic sealing chamber.

  In the above configuration, in the inspection room, in addition to the inspection of the airtight state of the internal space of the piezoelectric vibration device, the electrical characteristics of the piezoelectric vibration device using the piezoelectric vibration element external terminal may be inspected.

  In this case, it is possible to simultaneously perform an inspection of the airtight state of the internal space of the piezoelectric vibration device and an inspection of electrical characteristics such as DLD. In addition, in order to inspect the electrical characteristics of the piezoelectric vibration device, it is not necessary to prepare a new chamber or inspection member, and the manufacturing apparatus can be simplified. As a result, it is not necessary to newly provide a manufacturing apparatus for inspecting electrical characteristics in addition to the manufacturing apparatus, and both the manufacturing cost and the manufacturing time can be suppressed.

  In the above configuration, the inspection room may inspect the temperature characteristics of the piezoelectric vibration device using the piezoelectric vibration element external terminal in addition to the airtight state inspection of the internal space of the piezoelectric vibration device.

  In this case, it is possible to simultaneously perform the inspection of the airtight state of the internal space of the piezoelectric vibration device and the inspection of the temperature characteristics. Therefore, in order to inspect the temperature characteristics of the piezoelectric vibration device, it is not necessary to newly prepare a chamber or an inspection member, and the manufacturing apparatus can be simplified. As a result, it is not necessary to newly provide a manufacturing apparatus for inspecting temperature characteristics in addition to the manufacturing apparatus, and both the manufacturing cost and the manufacturing time can be suppressed. In particular, when atmosphere heating is used for heating and joining a plurality of sealing members in the hermetic sealing chamber, the chamber is in a high temperature state in the hermetic sealing chamber, and accordingly, the piezoelectric vibration device is also in a high temperature state. Therefore, the temperature characteristics of the piezoelectric vibration device can be inspected at high temperatures by actively using the high temperature state of the piezoelectric vibration device. It is possible to save time for making the temperature high.

  In the above configuration, the inspection room may be provided with a temperature adjusting unit that adjusts the temperature of the piezoelectric vibrating device to a preset reference temperature.

  In this case, it is preferable for lowering the temperature of the piezoelectric vibration device that has become high temperature due to the joining of a plurality of sealing members (for example, normal temperature). In addition, it is optimal for controlling the temperature of the piezoelectric vibrating device during the inspection of the temperature characteristics.

The said structure WHEREIN: In the said 2nd inspection chamber, the test | inspection of the airtight state of the internal space of a piezoelectric vibration device may be performed in the atmosphere of atmospheric pressure or a pressure higher than it .

When the second inspection chamber is pressurized to a pressure higher than the atmospheric pressure, the hermetic state of the internal space of the piezoelectric vibration device in the pressurized state is inspected. The fluctuation amount of the value is larger than that under non-pressurization. Therefore, it is possible to perform a more accurate airtight inspection.

  In the above configuration, the piezoelectric vibration element may be an element that performs thickness shear vibration. Examples of the element that performs the thickness-shear vibration include an AT-cut quartz crystal vibrating piece, a BT-cut quartz crystal vibrating piece, and an SC-cut quartz crystal vibrating piece. In general, a piezoelectric vibration element using flexural vibration has a CI value difference of 100 kΩ or more between a vacuum atmosphere and an air atmosphere. Therefore, it is easy to judge whether the airtightness is good or not by measuring the CI value at a reference temperature (room temperature). In the element that vibrates, this CI value difference is only about several Ω, and it is impossible to judge whether the airtightness is good or not only by measuring the CI value at the reference temperature (room temperature). Therefore, it is accurate using the electronic device manufacturing apparatus of the present invention. Airtight quality judgment is performed.

  According to the present invention, it is possible to reduce the time required for the airtight inspection.

FIG. 1 is a schematic side view of a crystal resonator that exposes an internal space according to the first embodiment. FIG. 2 is a block diagram showing a schematic configuration of the crystal resonator manufacturing apparatus according to the first embodiment. FIG. 3 is a schematic plan view of a pallet used in the crystal resonator manufacturing apparatus according to the first embodiment. FIG. 4 is data showing the results of measuring CI values using the crystal resonator manufacturing apparatus according to the first embodiment. FIG. 5 is data showing a result of measuring a change in CI value with respect to a pressure change. FIG. 6 is a schematic side view of an oscillator showing an internal space according to another embodiment of the present invention. FIG. 7 is a block diagram showing a schematic configuration of a crystal resonator manufacturing apparatus according to another embodiment of the present invention. FIG. 8 is a block diagram showing a schematic configuration of the crystal resonator manufacturing apparatus according to the second embodiment. FIG. 9 is a block diagram showing a schematic configuration of the crystal resonator manufacturing apparatus according to the third embodiment. FIG. 10 is a block diagram showing a schematic configuration of the crystal resonator manufacturing apparatus according to the fourth embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment described below, a crystal resonator manufacturing apparatus that is a piezoelectric vibration device as an electronic device will be described.

<Embodiment 1>
-Crystal resonator 1
As shown in FIG. 1, the crystal resonator 1 includes an AT-cut crystal vibrating piece 2 (hereinafter referred to as a crystal vibrating piece) of a piezoelectric element, which is an electronic component element, and a base 3 on which the crystal vibrating piece 2 is mounted and held. A sealing member in the present invention and a lid 4 (sealing member in the present invention) for hermetically sealing the quartz crystal vibrating piece 2 held on one main surface 31 of the base 3 are provided. In this crystal unit 1, the base 3 and the lid 4 are heated and melted and joined by the joining member 51 to form the main body casing 11, and the inner space 12 of the hermetically sealed main body casing 11 is formed by this joining. Is done. In this embodiment, the bonding member 51 is made of Ag brazing, Ni plating, AuSn alloy such as Au and Sn, glass material, or the like.

  The quartz crystal vibrating piece 2 is made of an AT-cut quartz piece substrate, and the substrate of the quartz crystal vibrating piece 2 is a single plate rectangular parallelepiped shape as shown in FIG. 1, and a pair of excitation electrodes is formed on both main surfaces of the substrate. (Not shown) are formed to face each other.

  As shown in FIG. 1, the lid 4 is made of a single plate Kovar base material (conductive material), nickel layers (not shown) are formed on both main surfaces of the Kovar base material, and the lower surface of the lid 4 (nickel layer) AuSn alloy is formed on the outer periphery of

  The base 3 is made of a base material made of a ceramic material such as alumina. As shown in FIG. 1, the bottom portion 32 and a wall portion extending upward from the bottom portion 32 along the main surface outer periphery of the one main surface 31 of the base 3. 33 is formed into a box-like body.

  On the other principal surface 38 of the base 3, there are piezoelectric vibration element external terminals 34 that are electrically connected to an external device such as an external circuit board (not shown) using a conductive bonding material (not shown) such as solder. Is formed. The piezoelectric vibration element external terminal 34 is electrically connected to the excitation electrode of the crystal vibrating piece 2 via the conductive bonding material 52.

  In the crystal unit 1, as shown in FIG. 1, the crystal resonator element is disposed on the bottom 32 of the base 3 of the internal space 12 via a conductive bonding material 52 (conductive resin adhesive, metal bump, plating bump, etc.). 2 are joined and electrically connected (electromechanically joined).

  Then, the base 3 on which the crystal vibrating piece 2 is mounted and joined is joined to the lid 4 via the joining member 51 by heat-melt joining, and the crystal vibrating piece 2 is hermetically sealed as shown in FIG. The crystal unit 1 is manufactured. The quartz resonator 1 manufactured here is mounted on an external circuit board with a conductive bonding material such as solder via the piezoelectric vibration element external terminals 34. In addition, the heat bonding used for bonding the crystal vibrating piece 2 to the base 3 is an atmosphere in which the entire space including the base 3 on which the crystal vibrating piece 2 is mounted and bonded is heated and the lid 4 is heated and melt bonded to the base 3. The lid 4 is disposed on the base 3 on which the thermal bonding or the crystal vibrating piece 2 is mounted and bonded (or the base 3 on which the crystal vibrating piece 2 is mounted and bonded on the lid 4), and the base 3 and the lid 4 And the like. For example, local heat bonding (for example, seam welding or beam welding) in which the lid 4 is heated and melt-bonded to the base 3 by directly heating the joint portion is used.

  Next, a manufacturing apparatus 7 for manufacturing the crystal unit 1 will be described with reference to the drawings.

-Manufacturing apparatus 7 for crystal unit 1-
The crystal resonator 1 manufacturing apparatus 7 according to the present embodiment shows an example of atmospheric heating bonding between the base 3 and the lid 4, and the quartz crystal resonator element 2 is hermetically sealed with the base 3 and the lid 4. An inspection of the hermetically sealed quartz crystal vibrating piece 2 is performed.

  In the manufacturing apparatus 7, as shown in FIG. 2, a plurality of chambers (introduction chamber 71, preheating chamber 72, hermetic sealing chamber 73, and inspection chamber 75) are provided side by side. This is an in-line manufacturing apparatus that hermetically seals and inspects the crystal unit 1 while being conveyed in the direction (X direction shown in FIG. 2).

  Specifically, in the manufacturing apparatus 7, the introduction chamber 71, the preheating chamber 72, the hermetic sealing chamber 73, and the inspection chamber 75 are sequentially arranged along the X direction that is the conveyance direction of the crystal unit 1. A manufacturing process is performed in each chamber (introduction chamber 71, preheating chamber 72, hermetic sealing chamber 73, inspection chamber 75) while conveying one pallet 8 carrying a plurality of crystal resonators 1 in the X direction. . Moreover, in this manufacturing apparatus 7, as shown in FIG. 2, between the exterior and the introduction chamber 71, between the introduction chamber 71 and the 1st preheating chamber 721, the airtight sealing chamber 73, and the temperature control chamber 74. , And between the temperature adjustment chamber 74 and the inspection chamber 75 and between the inspection chamber 75 and the outside, gate valves 76 are provided to freely open and shut off the respective chambers. Can be controlled to suppress changes in atmospheric pressure.

  As shown in FIG. 3, the pallet 8 here is composed of a plate formed in a rectangular parallelepiped, and a plurality of crystal resonators 1 are arranged in a matrix on the pallet 8. In the present embodiment, a maximum of 400 (20 × 20) crystal resonators 1 can be arranged on the pallet 8. The mounting portion 81 on which up to 400 (20 × 20) crystal resonators 1 can be mounted is a square in plan view, and two reference works 82 serving as test standards are arranged at diagonal positions. ing. In the present embodiment, a crystal resonator that has been determined to be non-defective in advance is used as the reference work 82.

  Next, a plurality of chambers (introduction chamber 71, preheating chamber 72, hermetic sealing chamber 73, temperature adjustment chamber 74, and inspection chamber 75) will be described with reference to FIG.

  The introduction chamber 71 is a chamber for carrying the pallet 8 into the manufacturing apparatus 7. The gate valve 76 provided on the upstream side in the X direction of the introduction chamber 71 is opened, and the crystal resonator 1 (in which the internal space 12 is not formed) ( That is, the base 3 and the lid 4 are separate members. For convenience, the pallet 8 on which a plurality of unsealed sealed crystal resonators 1 are mounted is loaded from the outside. After carrying in, the gate valve 76 is closed. Then, after closing the gate valve 76, the inside of the introduction chamber 71 is controlled to reduce the pressure, and the pressure is changed from the atmospheric state to the vacuum state.

  The preheating chamber 72 is a chamber for raising the temperature of the unsealed crystal resonator 1 on the pallet 8 and is adjacent to the downstream side in the X direction of the introduction chamber 71, and is connected to the first preheating chamber 721 and the second preheating chamber 721. The preheating chamber 722 and the third preheating chamber 723 are configured. The first preheating chamber 721, the second preheating chamber 722, and the third preheating chamber 723 are sequentially arranged along the X direction, the first preheating chamber 721 is adjacent to the introduction chamber 71, and the first preheating chamber 721 and the introduction chamber 71 are partitioned by a gate valve 76 that can be freely opened and closed. In the preheating chamber 72 (the first preheating chamber 721, the second preheating chamber 722, and the third preheating chamber 723), the interior of the chamber is in a vacuum state (vacuum atmosphere). In the preheating chamber 722 and the third preheating chamber 723, the reference temperature is set in advance. In the preheating chamber 72, after the chamber of the introduction chamber 71 is in a vacuum state (vacuum atmosphere), the gate valve 76 on the downstream side in the X direction of the introduction chamber 71 is opened, and the pallet 8 is carried from the introduction chamber 71, After carrying in the pallet 8, the gate valve 76 is closed. Then, after closing the gate valve 76, the pallet 8 is conveyed in the order of the first preheating chamber 721, the second preheating chamber 722, and the third preheating chamber 723, so that the airtight sealing on the pallet 8 is performed. The crystal resonator 1 in the state is heated stepwise to bring the temperature of the crystal resonator 1 in the non-hermetic sealed state to a desired temperature. The reference temperature of the preheating chamber 72 is set to 250 to 290 ° C.

  The hermetic sealing chamber 73 is a chamber that hermetically seals the crystal vibrating piece 2 by joining the base 3 and the lid 4, and is in the X direction of the preheating chamber 72 (specifically, the third preheating chamber 723). Adjacent to the downstream side. In the hermetic sealing chamber 73, as in the preheating chamber 72, the chamber is in a vacuum state (vacuum atmosphere) and is set to a preset reference temperature. In the hermetic sealing chamber 73, the pallet 8 is carried from the preheating chamber 72 in a vacuum atmosphere, and the crystal resonator 1 in an unsealed sealed state on the pallet 8 is higher than the melting temperature at which the bonding member 51 is melted. Heat to temperature. Then, in the hermetic sealing chamber 73, the base 3 and the lid 4 are joined by heating and melting through the joining member 51, and the quartz crystal resonator element 2 mounted on the base 3 is hermetically sealed in the internal space 12. The reference temperature of the hermetic sealing chamber 73 is set to about 300 to about 330 ° C., and the crystal unit 1 is heated to about 280 ° C. in the hermetic sealing chamber 73. In the present specification, the crystal in the non-hermetic sealed state in the preheating chamber 72 with respect to the heating of the crystal resonator 1 (and the crystal resonator 1 in the non-hermetic sealed state) in the hermetic sealing chamber 73 is used. The heating of the vibrator 1 is preheating.

  The temperature adjustment chamber 74 is a chamber for adjusting the temperature of the crystal unit 1 to a preset reference temperature (in the present embodiment, about 25 ° C. which is normal temperature), and is downstream of the hermetic sealing chamber 73 in the X direction. Adjacent to. In the temperature adjustment chamber 74, a Peltier element, a cooling plate, and the like are provided as a temperature adjustment unit (not shown). In this way, by providing the temperature adjustment chamber 74 between the hermetic sealing chamber 73 and the inspection chamber 75, the quartz crystal that is heated to a high temperature by the heat bonding between the base 3 and the lid 4 by the atmospheric heating in the hermetic sealing chamber 73. The temperature of the vibrator 1 can be lowered. Specifically, in the temperature adjustment chamber 74, temperature adjustment is performed to lower the temperature of the crystal unit 1 to about 25 ° C., which is normal temperature.

  The inspection chamber 75 is a chamber for inspecting the hermetic state of the internal space 12 of the crystal unit 1 hermetically sealed in the hermetic sealing chamber 73, and is adjacent to the downstream side in the X direction of the temperature adjustment chamber 74. The chamber 751 and the second inspection chamber 752 are configured. The first examination chamber 751 and the second examination chamber 752 are sequentially arranged along the X direction, the first examination chamber 751 is adjacent to the temperature adjustment chamber 74, and the space between the temperature adjustment chamber 74 and the first examination chamber 751 is between The gate valve 76 is openable and closable.

  In the first inspection chamber 751, the airtight state of the internal space 12 of the crystal unit 1 is inspected in a vacuum atmosphere. Specifically, in the first examination chamber 751, the inside of the chamber is evacuated and the temperature of the crystal unit 1 is lowered to a room temperature of about 25 ° C. in the temperature adjustment chamber 74. The provided gate valve 76 is opened, the pallet 8 is loaded from the temperature adjustment chamber 74, and after the pallet 8 is loaded, the gate valve 76 is closed. Then, after the gate valve 76 is closed, the airtight state of the internal space 12 of the crystal resonator 1 (measurement of the CI value of the crystal resonator 1) is performed in a vacuum atmosphere. This inspection is the first measurement, and the airtight state of the internal space 12 of the crystal unit 1 is inspected by the first measurement result and the second measurement in the second inspection chamber 752 described below. In the airtight state inspection, a pair of probe pins (not shown) are used, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to measure the CI value of the crystal resonator 1.

  Next, in the second inspection chamber 752, the gate valve 76 provided on the upstream side in the X direction of the second inspection chamber 752 is opened, the pallet 8 is loaded from the first inspection chamber 751, and the pallet 8 is loaded. The valve 76 is closed. Then, after the gate valve 76 is closed, the interior of the crystal unit 1 is opened with respect to the crystal unit 1 having the same temperature (about 25 ° C.) as the test in the first test chamber 751. An inspection of the airtight state of the space 12 (measurement of the CI value of the crystal unit 1) is performed. This inspection is the second measurement. In the second measurement, as in the first measurement, a pair of probe pins are used in the airtight state inspection, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to obtain a crystal. The CI value of the vibrator 1 is measured.

  Then, after completion of the airtight inspection, the gate valve 76 provided on the downstream side in the X direction of the second inspection chamber 752 is opened to carry the pallet 8 out. After carrying in the pallet 8 outside, the gate valve 76 is closed and the manufacturing of the plurality of crystal units 1 by the manufacturing apparatus 7 is finished.

  In addition, the temperature of the crystal unit 1 on the pallet 8 in the preheating chamber 72, the hermetic sealing chamber 73, the temperature adjustment chamber 74, and the inspection chamber 75 is measured as follows. First, the oscillation frequency of the reference work 82 and the crystal resonator 1 to be inspected to be tested is measured. Then, from the value of the oscillation frequency of the reference work 82, a control unit (not shown) of the manufacturing apparatus 7 calculates an error of the real temperature with respect to the reference temperature, and based on the calculated error, the crystal resonator 1 in each chamber. Perform temperature control. Note that the measurement of the temperature of the crystal unit 1 is not limited to using the reference work 82 as described above, and may be measurement using a temperature sensor.

  Next, using the manufacturing apparatus 7 according to the first embodiment, the CI value of the crystal unit 1 (plane dimension: 3.2 × 2.5 mm) was measured (experimental). The data is shown in FIG. FIG. 4 shows the result of actual measurement of the CI value of the crystal unit 1 in the second inspection chamber 752 of the manufacturing apparatus 7 shown in FIG. 2, with the horizontal axis representing the time axis and the vertical axis representing the amount of change in the CI value ( ΔCI). In this experiment, two crystal resonators 1 that have been confirmed in advance to have no leak in the helium leak test and six crystal resonators 1 that have been confirmed to have leak in the test are prepared. Two crystal resonators 1 were mounted on the pallet 8 and the CI values of the eight crystal resonators 1 were simultaneously measured by the above manufacturing method. In this experiment, numbers 1 and 2 are assigned to the crystal resonator 1 having no leak, and numbers 3 to 8 are assigned to the crystal resonator 1 having the leak.

  According to this experiment, as shown in FIG. 4, the CI value of the quartz resonator 1 having leaks of numbers 3 to 8 changes with time. On the other hand, in the quartz resonator 1 having no leaks of Nos. 1 and 2, the CI value does not change over time. That is, the CI value of only the quartz resonator 1 having a leak fluctuates. Therefore, according to the manufacturing apparatus 7, the airtight inspection can be reliably performed. In FIG. 4, the amount of change in the CI value in the second examination room 752 is observed over time for the experiment, but in practice, the CI measured after a certain period of time has passed from the second examination room 752. The value and the CI value measured in the first examination room 751 are compared, and the presence / absence of a leak is inspected (air tightness inspection) by the change amount of the CI value.

  According to the present invention, the vacuum environment (depressurized state) used for hermetically sealing the crystal unit 1 can also be used for the inspection of the crystal unit 1, and therefore only for performing the hermetic test. The time required for decompressing the internal space 12 of the crystal unit 1 is not required, and the time required for the airtight inspection can be shortened. Furthermore, according to the present embodiment, it is not necessary to perform two inspection processes (gross leak inspection process and helium leak inspection process) as in the prior art, and also in this respect, the time required for the airtight inspection can be shortened. Can do. Further, according to the present embodiment, the hermetic sealing process using the conventional sealing apparatus and the hermetic inspection process using the hermetic inspection apparatus can be realized by one manufacturing apparatus, and as a result, This is suitable for shortening the manufacturing time of the crystal unit 1.

  Further, according to the present embodiment, the first inspection is performed from the hermetic sealing chamber 73 to the quartz resonator 1 in which the inner space 12 is hermetically sealed in the hermetic sealing chamber 73 without being transported to the outside. Since the crystal resonator 1 is transported to the chamber 751 and the airtight state of the internal space 12 of the crystal resonator 1 is inspected in the first inspection chamber 751, the first airtight inspection (the crystal resonator 1 CI value can be measured). Thereafter, the crystal resonator 1 is transported from the first inspection chamber 751 to the second inspection chamber 752, and in the second inspection chamber 752, the second airtight inspection (quartz crystal resonator) of the internal space 12 of the crystal resonator 1 is performed in the atmosphere. 1), and the difference between these inspection results can be compared (the amount of variation in the CI value of the crystal unit 1 can be recognized). As a result, even after the hermetic sealing of the crystal unit 1, even a defective crystal unit 1 having an airtight leak in the internal space is compared with the difference between these inspection results (the CI value of the crystal unit 1). By recognizing the fluctuation amount), an accurate airtight inspection of the internal space 12 can be performed. On the other hand, if the hermetic sealing and the hermetic inspection are separately performed as in the prior art, a piezoelectric vibration device such as a crystal resonator is once carried out to the atmosphere. In a defective piezoelectric device such as a crystal resonator, the state of the internal space changes and a normal airtight inspection cannot be performed.

  Further, according to the present embodiment, the preheating chamber 72 is provided as a front chamber of the hermetic sealing chamber 73, and the crystal unit 1 is arranged in the order of the preheating chamber 72, the hermetic sealing chamber 73, and the inspection chamber 75. Transport. In this configuration, when the base 3 and the lid 4 are heat-melted and joined by local heating, the preheating chamber 72 is provided in the front chamber of the hermetic sealing chamber 73 to be heat-joined. The adverse effects of thermal strain and thermal stress can be suppressed. Further, as shown in the present embodiment, when the base 3 and the lid 4 are heat-melted and joined by atmospheric heating, it is necessary to raise the base 3 and the lid 4 more uniformly to a predetermined temperature. According to this configuration, since the preheating chamber 72 is provided as the front chamber (pre-transport chamber) of the hermetic sealing chamber 73, the base 3 and the lid 4 are more uniformly set at a predetermined temperature in the hermetic sealing chamber 73. It is possible to reduce the time to raise the temperature. As a result, the preheating chamber 72 is not provided, and the tact reduction of the sealing process is more preferable as compared with a manufacturing apparatus that heats only with the hermetic sealing chamber 73.

  In the present embodiment, since the first CI value is measured in a vacuum atmosphere, the first CI value is measured in a pressurized atmosphere to which atmospheric pressure or higher pressure is applied. Compared with the case where it performs, there exists an effect which can shorten inspection time. FIG. 5 shows the result of actual measurement of the CI value while changing the pressure in the vacuum chamber using the crystal resonator 1 (planar dimension: 3.2 × 2.5 mm) before sealing. In FIG. 5, the horizontal axis is pressure, and the vertical axis is the amount of change in CI value (ΔCI). As shown in FIG. 5, it can be seen that the change rate of the CI value with respect to the pressure change is small on the high pressure side (viscous flow region) and large on the low pressure side (molecular flow region). This is because the CI value of the crystal unit 1 increases due to friction with gas, and this frictional force is proportional to the pressure in the molecular flow region and proportional to the 1/2 power of the pressure in the viscous flow region. In this embodiment, since a heat-sealed vacuum atmosphere is used based on this principle, the change in CI value can be measured in the molecular flow region on the low-pressure side shown in FIG. On the other hand, when the first CI value is measured under atmospheric pressure, it is necessary to measure the second CI value after changing the pressure from atmospheric pressure to either reduced pressure or increased pressure. . As described above, when the pressure is changed from atmospheric pressure to either reduced pressure or increased pressure, the CI value changes in the viscous flow region, so that the change amount of the CI value becomes small, and therefore the inspection time is lengthened. There is a need. The same applies when the first CI value is measured in a pressurized atmosphere at atmospheric pressure or higher.

  As described above, according to the present embodiment, it is possible to increase the change amount of the CI value by measuring the CI value for the first time in a vacuum state. Therefore, the airtightness inspection can be performed in a shorter time compared to the case where the pressure is changed.

  In the present embodiment, a maximum of 400 crystal resonators 1 can be mounted on one pallet 8, but the number of mounted crystal resonators 1 is not limited and can be arbitrarily set.

  Further, the conveyance direction in one direction (X direction) of the crystal resonator 1 in the present embodiment is not strictly a conveyance direction along the X direction, and the crystal resonator 1 does not circulate without circulating. The conveyance direction of the child 1 may be one.

  In this embodiment, the AT-cut quartz crystal vibrating piece 2 is used as the piezoelectric vibration element. However, the present invention is not limited to this, and the piezoelectric vibration element may be an element that performs thickness shear vibration. Examples of the element that performs the thickness-shear vibration include a BT cut crystal vibrating piece and an SC cut crystal vibrating piece in addition to the AT cut crystal vibrating piece. In general, a piezoelectric vibration element using flexural vibration has a CI value difference of 100 kΩ or more between a vacuum atmosphere and an air atmosphere. Therefore, it is easy to judge whether the airtightness is good or not by measuring the CI value at a reference temperature (room temperature). In the element that vibrates, this CI value difference is only about several Ω, and it is impossible to judge the quality of the airtightness only by measuring the CI value at the reference temperature (room temperature). Airtight quality judgment is performed.

  In this embodiment, the crystal resonator 1 shown in FIG. 1 is used as the piezoelectric vibration device. However, the present invention is not limited to this, and other forms of crystal resonators and crystal filters are shown in FIG. Such an oscillator 1 may be used. Since the oscillator 1 shown in FIG. 6 is the same piezoelectric vibration device as that of the present embodiment, the same reference numeral 1 as that of the crystal resonator is attached for convenience.

  In the oscillator 1 shown in FIG. 6, a crystal vibrating piece 2, an IC chip 6 (electronic component element referred to in the present invention) that is a one-chip integrated circuit element (integrated circuit element) that constitutes an oscillation circuit together with the crystal vibrating piece 2, A base 3 for mounting and holding the crystal vibrating piece 2 and the IC chip 6 and a lid 4 for hermetically sealing the crystal vibrating piece 2 and the IC chip 6 held on one main surface 31 of the base 3 are provided. ing. A step portion 35 is provided in the base 3 in the internal space 12 of the oscillator 1.

  In this oscillator 1, as shown in FIG. 6, the crystal vibrating piece 2 is disposed on the step portion 35 of the base 3 in the internal space via a conductive bonding material 52 (conductive resin adhesive, metal bump, plating bump, etc.). Are joined and electrically connected (electromechanically joined). Further, the IC chip 6 is bonded and electrically connected (electromechanically bonded) to the bottom 32 of the base 3 of the internal space 12 via the conductive bonding material 52. Thus, on the base 3 of the internal space 12, as shown in FIG. 6, the crystal vibrating piece 2 bonded on the step portion 35 and the IC chip 6 bonded on the bottom portion 32 are stacked. Arranged. An external terminal 34 for a piezoelectric vibration element that measures and inspects the characteristics of the crystal vibrating piece 2 is formed on the outer surface 36 of the base 3, and an external circuit board (not shown) is provided on the other main surface 38 of the base 3. An external terminal 37 that is electrically connected to an external device is formed. When the oscillator 1 is manufactured by the manufacturing apparatus 7, in the inspection chamber 75, the pair of probe pins is in contact with the piezoelectric vibration element external terminal 34 to inspect the hermetic state of the oscillator 1.

  Further, in the inspection chamber 75 of the present embodiment, the hermetic state of the crystal unit 1 is inspected in a vacuum atmosphere and an air atmosphere. However, the inspection chamber 75 is not limited to this. The characteristics may also be inspected. This electrical property inspection is performed using a pair of probe pins as in the airtight inspection. Therefore, it is not necessary to prepare a new chamber or inspection member in order to inspect the electrical characteristics, and the manufacturing apparatus 7 for the crystal resonator 1 can be simplified. As a result, it is not necessary to newly provide a manufacturing apparatus for inspecting electrical characteristics in addition to the manufacturing apparatus 7, and both the manufacturing cost and the manufacturing time can be suppressed. It should be noted that the inspection of the electrical characteristics such as DLD of the crystal unit 1 in the inspection chamber 75 can be performed in either a vacuum atmosphere or an air atmosphere.

  In the present embodiment, the temperature adjustment chamber 74 and the inspection chamber 75 are separated. However, the present invention is not limited to this, and the temperature adjustment section is provided in the inspection chamber 75 (specifically, the first inspection chamber 751). May be provided. That is, the examination room 75 may also serve as the temperature adjustment room 74.

  In the present embodiment, the base 3 and the lid 4 are heated and melt-bonded by atmospheric heating. However, the present invention is not limited to this. In the hermetic sealing chamber 73, the base 3 and the lid 4 are bonded by seam welding. Alternatively, the lid 4 may be heated and bonded to the base 3 by locally directly heating the joint with the lid 4. By adopting the heat bonding of the base 3 and the lid 4 by seam welding, unlike the present embodiment, there is no need to increase the temperature in the hermetic sealing chamber 73, and as shown in FIG. The manufacturing apparatus 1 that does not require the chamber 72 and the temperature adjustment chamber 74 can perform hermetic sealing and inspection of the crystal unit 1. Note that the manufacturing method by the manufacturing apparatus 1 shown in FIG. 7 is in accordance with the manufacturing method by the manufacturing apparatus 1 of the first embodiment.

<Embodiment 2>
Next, the manufacturing apparatus 7 for the crystal resonator 1 according to the second embodiment will be described with reference to the drawings. Note that the crystal resonator 1 manufacturing apparatus 7 according to the second embodiment differs from the first embodiment in the relationship between the temperature adjustment chamber 74 and the inspection chamber 75 and the configuration of the inspection chamber 75. Therefore, the operation effect and modification by the same configuration as the manufacturing apparatus 7 of the crystal unit 1 according to the first embodiment are the same as the operation effect and modification example of the manufacturing apparatus 7 of the crystal unit 1 according to the first embodiment. Have. Therefore, in the second embodiment, a point different from the first embodiment will be described, and description of the same configuration will be omitted.

  As shown in FIG. 8, the inspection chamber 75 according to the present embodiment includes a third inspection chamber 753, a fourth inspection chamber 754, and a fifth inspection chamber 755. In the third inspection chamber 753, under a vacuum atmosphere. The temperature characteristic of the internal space 12 of the crystal unit 1 in the high temperature state is inspected, and the airtight state and the temperature characteristic of the internal space 12 of the crystal unit 1 in the normal temperature state are inspected in a fourth atmosphere in the fourth inspection chamber 754. In the fifth inspection chamber 755, the airtight state of the internal space 12 of the crystal unit 1 in the normal temperature state is inspected in an air atmosphere. In the present embodiment, a temperature adjustment chamber 74 is interposed between the third inspection chamber 753 and the fourth inspection chamber 754, and the temperature of the crystal unit 1 is increased to a high temperature (about 100 ° C.) by the temperature adjustment chamber 74. ) To room temperature (generally about 25 ° C.).

  The third inspection chamber 753 is adjacent to the downstream side in the X direction of the hermetic sealing chamber 73 (specifically, the third preheating chamber 723), and is located upstream and downstream in the X direction of the third inspection chamber 753. A gate valve 76 is provided for each. In the third inspection chamber 753, the temperature characteristics of the crystal resonator 1 (about 100 ° C.) that is at a high temperature due to the joining of the base 3 and the lid 4 are inspected. In this airtight state inspection and temperature characteristic inspection, a pair of probe pins (not shown) are used, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to obtain the CI value of the crystal resonator 1. Measure its frequency. The measurement here is the first measurement of the temperature characteristic inspection, and the following inspection in the fourth inspection chamber 754 is the second measurement, and the temperature of the crystal unit 1 is measured by these two measurements. Inspect the characteristics.

  After the inspection of the temperature characteristics of the crystal unit 1 at a high temperature is completed in the third inspection chamber 753, the gate valve 76 provided on the downstream side in the X direction of the third inspection chamber 753 is opened, and the pallet 8 is moved to the temperature adjustment chamber 74. Transport to.

  In the temperature adjustment chamber 74, the temperature of the crystal unit 1 is adjusted from a high temperature of about 100 ° C. to a normal temperature of about 25 ° C. Then, after finishing the temperature adjustment of the crystal unit 1, the gate valve 76 provided on the downstream side in the X direction of the temperature adjustment chamber 74 is opened, and the pallet 8 is transported to the fourth inspection chamber 754.

  The fourth inspection chamber 754 is adjacent to the downstream side in the X direction of the temperature adjustment chamber 74, and gate valves 76 are provided on the upstream side and the downstream side in the X direction of the fourth inspection chamber 754, respectively. In the fourth inspection chamber 754, the airtight state of the internal space of the quartz resonator 1 at room temperature in a vacuum atmosphere and the temperature characteristics of the quartz resonator 1 at room temperature are inspected. In these airtight state inspection and temperature characteristic inspection, a pair of probe pins (not shown) are used as in the third inspection chamber 753, and the probe pins are connected to the piezoelectric vibration element external terminals 34 of the crystal unit 1. Connect to measure the CI value and frequency of the crystal unit 1.

  In the fourth inspection chamber 754, after the inspection of the airtight state of the internal space 12 of the crystal resonator 1 in a vacuum atmosphere and the inspection of the temperature characteristics of the crystal resonator 1 at room temperature, the fourth inspection chamber 754 The gate valve 76 provided on the downstream side in the X direction is opened, and the pallet 8 is conveyed to the fifth inspection chamber 755.

  In the fifth inspection chamber 755, the airtight state of the internal space 12 of the crystal unit 1 (normal temperature) is inspected in an air atmosphere. In the fifth inspection chamber 755, after the pallet 8 is loaded from the fourth inspection chamber 754, the gate valve 76 is closed. Then, after closing the gate valve 76, the airtight state of the internal space 12 of the crystal unit 1 is inspected in an air atmosphere. In this airtight state inspection, a pair of probe pins (not shown) are used as in the third inspection chamber 753, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to vibrate crystal. The CI value of child 1 is measured.

  After the inspection of the airtight state of the crystal unit 1 in the atmosphere in the fifth inspection chamber 755 is finished, the gate valve 76 provided on the downstream side in the X direction of the fifth inspection chamber 755 is opened to open the pallet 8. After carrying out outside and carrying in the pallet 8 outside, the gate valve 76 is closed and manufacture of the several crystal oscillator 1 by this manufacturing apparatus 7 is completed.

  According to the manufacturing method of the crystal unit 1 according to the present embodiment, in addition to the function and effect of the manufacturing apparatus 7 according to the first embodiment, the inspection of the airtight state of the internal space 12 of the crystal unit 1, The temperature characteristics of the crystal unit 1 can be inspected at the same time. Therefore, in order to inspect the temperature characteristics of the crystal unit 1, it is not necessary to prepare a new chamber or inspection member, and the manufacturing apparatus 7 for the crystal unit 1 can be simplified. As a result, it is not necessary to newly provide a manufacturing apparatus for inspecting temperature characteristics in addition to the manufacturing apparatus 7, and both the manufacturing cost and the manufacturing time can be suppressed.

  Note that the inspection of the temperature characteristics of the crystal resonator 1 in the inspection chamber 75 can be performed in either a vacuum atmosphere, an air atmosphere, or an atmosphere. When the inspection of the airtight state of the internal space 12 and the inspection of the temperature characteristics of the crystal resonator 1 are performed at the same time, the manufacturing steps are performed in the order shown in the present embodiment.

  In the present embodiment, it is also possible to perform only the temperature characteristic inspection without inspecting the airtight state of the crystal unit 1.

<Embodiment 3>
Next, the manufacturing apparatus 7 for the crystal resonator 1 according to the third embodiment will be described with reference to the drawings. The crystal resonator 1 manufacturing apparatus 7 according to the third embodiment is different from the first embodiment in the examination room 75. Therefore, the operation effect and modification by the same configuration as the manufacturing apparatus 7 of the crystal unit 1 according to the first embodiment are the same as the operation effect and modification example of the manufacturing apparatus 7 of the crystal unit 1 according to the first embodiment. Have. Therefore, in the third embodiment, the configuration of the examination room 75 different from that of the first embodiment will be described, and the description of the same configuration will be omitted.

  As shown in FIG. 9, the examination room 75 according to the present embodiment includes a sixth examination room 756 and a seventh examination room 757. In the sixth examination room 756 and the seventh examination room 757, the crystal resonator 1 is provided. The airtight state of the internal space 12 is inspected. The inspection of the airtight state of the internal space 12 of the crystal resonator 1 in the sixth inspection chamber 756 is performed in a room under a vacuum atmosphere, and the airtightness of the internal space 12 of the crystal resonator 1 in the seventh inspection chamber 757 is performed. The state inspection is performed in a room pressurized to a pressure exceeding atmospheric pressure. The indoor pressure may be filled with an appropriate gas, for example, nitrogen gas is introduced into the examination room, or may be air (atmosphere) introduction.

  The sixth inspection chamber 756 is adjacent to the downstream side of the temperature adjustment chamber 74 in the X direction, and gate valves 76 are provided on the upstream side and the downstream side of the sixth inspection chamber 756 in the X direction, respectively. In the sixth inspection chamber 756, the airtight state of the crystal unit 1 is inspected in a vacuum atmosphere. In the sixth inspection chamber 756, after adjusting the temperature of the crystal unit 1 to room temperature in the temperature adjustment chamber 74, the gate valve 76 provided on the upstream side in the X direction of the sixth inspection chamber 756 is opened. After the pallet 8 is loaded and the pallet 8 is loaded, the gate valve 76 is closed. After the gate valve 76 is closed, the airtight state of the internal space 12 of the crystal unit 1 is inspected in a vacuum atmosphere. In this airtight state inspection, a pair of probe pins (not shown) are used, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to measure the CI value of the crystal resonator 1. This inspection becomes the first measurement, and the airtight state of the internal space 12 of the crystal unit 1 is inspected by the first measurement result and the second measurement in the seventh inspection chamber 757 described below.

  Next, in the seventh inspection chamber 757, the gate valve 76 provided on the upstream side in the X direction of the seventh inspection chamber 757 is opened, the pallet 8 is loaded from the sixth inspection chamber 756, the pallet 8 is loaded, The valve 76 is closed. Then, after closing the gate valve 76, the interior is pressurized. In the present embodiment, the interior of the fourth examination chamber 754 is pressurized to about 0.3 to about 0.4 MPa. Then, the airtight state of the crystal unit 1 under pressure is inspected. This inspection is the second measurement. In the second measurement, as in the first measurement, a pair of probe pins are used in the airtight state inspection, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to obtain a crystal. The CI value of the vibrator 1 is measured.

  Then, after the inspection of the airtight state of the crystal unit 1 is completed, the gate valve 76 provided on the downstream side in the X direction of the seventh inspection chamber 757 is opened, the pallet 8 is carried out, and the pallet 8 is carried out. After that, the gate valve 76 is closed, and the manufacturing of the plurality of crystal resonators 1 by the manufacturing apparatus 7 is finished.

  According to the method for manufacturing the crystal resonator 1 according to the present embodiment, in addition to the operational effects of the manufacturing apparatus 7 according to the first embodiment, the internal space 12 of the crystal resonator 1 in a pressurized state can be obtained. Since the airtight state is inspected, if there is a hermetic sealing leak, the amount of fluctuation of the CI value becomes larger than that under non-pressurization. Therefore, a more accurate airtight inspection can be performed.

<Embodiment 4>
Next, the manufacturing apparatus 7 for the crystal unit 1 according to the fourth embodiment will be described with reference to the drawings. The crystal resonator 1 manufacturing apparatus 7 according to the fourth embodiment is a manufacturing apparatus having both the inspections by the crystal resonator 1 manufacturing apparatus 7 according to the first to third embodiments. Therefore, the operation effect and the modification by the same configuration as the crystal resonator 1 manufacturing apparatus 7 according to the first to third embodiments are the same as those of the crystal resonator 1 manufacturing apparatus 7 according to the first to third embodiments. And it has a modification.

  As shown in FIG. 10, the inspection chamber 75 according to the present embodiment includes an eighth inspection chamber 758, a ninth inspection chamber 759, and a tenth inspection chamber 7510. In the eighth inspection chamber 758, a vacuum atmosphere is provided. The temperature characteristic of the internal space 12 of the crystal unit 1 in the high temperature state is inspected, and the airtight state and the temperature characteristic of the internal space 12 of the crystal unit 1 in the normal temperature state are inspected in a ninth vacuum chamber 759 in a vacuum atmosphere. In the tenth inspection chamber 7510, the airtight state of the internal space 12 of the quartz crystal resonator 1 at room temperature is tested under pressure. In the present embodiment, a temperature adjustment chamber 74 is interposed between the eighth inspection chamber 758 and the ninth inspection chamber 759, and the temperature adjustment chamber 74 increases the temperature of the crystal unit 1 to a high temperature (about 100 ° C.). ) To room temperature (about 25 ° C.).

  The eighth inspection chamber 758 is adjacent to the downstream side in the X direction of the hermetic sealing chamber 73 (specifically, the third preheating chamber 723), and upstream and downstream in the X direction of the eighth inspection chamber 758. A gate valve 76 is provided for each. In the eighth inspection chamber 758, the temperature characteristics of the crystal resonator 1 (about 100 ° C.) that is at a high temperature due to the joining of the base 3 and the lid 4 are inspected. In this airtight state inspection and temperature characteristic inspection, a pair of probe pins (not shown) are used, and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 to obtain the CI value of the crystal resonator 1. Measure its frequency. The measurement here is the first measurement of the temperature characteristic inspection, and the inspection in the ninth inspection chamber 759 described below is the second measurement, and the temperature of the crystal unit 1 is measured by these two measurements. Inspect the characteristics.

  After the inspection of the temperature characteristics of the crystal unit 1 at a high temperature is completed in the eighth inspection chamber 758, the gate valve 76 provided on the downstream side in the X direction of the eighth inspection chamber 758 is opened, and the pallet 8 is moved to the temperature adjustment chamber 74. Transport to.

  In the temperature adjustment chamber 74, the temperature of the crystal unit 1 is adjusted from a high temperature of about 100 ° C. to a normal temperature of about 25 ° C. After the temperature adjustment of the crystal unit 1 is completed, the gate valve 76 provided on the downstream side in the X direction of the temperature adjustment chamber 74 is opened, and the pallet 8 is conveyed to the ninth inspection chamber 759.

  The ninth inspection chamber 759 is adjacent to the downstream side of the temperature adjustment chamber 74 in the X direction, and gate valves 76 are provided on the upstream side and the downstream side of the ninth inspection chamber 759 in the X direction, respectively. In the ninth inspection chamber 759, the airtight state of the internal space of the quartz resonator 1 at room temperature in a vacuum atmosphere and the temperature characteristics of the quartz resonator 1 at room temperature are inspected. In the airtight state inspection and the temperature characteristic inspection, a pair of probe pins (not shown) is used as in the eighth inspection chamber 758, and the probe pins are connected to the piezoelectric vibration element external terminals 34 of the crystal unit 1. Connect to measure the CI value and frequency of the crystal unit 1.

  In the ninth inspection chamber 759, after the inspection of the airtight state of the internal space 12 of the crystal resonator 1 in a vacuum atmosphere and the inspection of the temperature characteristics of the crystal resonator 1 at room temperature, the ninth inspection chamber 759 The gate valve 76 provided on the downstream side in the X direction is opened, and the pallet 8 is transported to the tenth inspection chamber 7510.

  In the tenth inspection chamber 7510, an airtight state of the internal space 12 of the crystal unit 1 (normal temperature) is inspected under a pressurized atmosphere. In the tenth inspection chamber 7510, after loading the pallet 8 from the ninth inspection chamber 759, the gate valve 76 is closed. Then, after closing the gate valve 76, the airtight state of the internal space 12 of the crystal unit 1 is inspected under pressure. In this airtight state inspection, a pair of probe pins (not shown) are used and the probe pins are connected to the piezoelectric vibration element external terminal 34 of the crystal resonator 1 in the same manner as the eighth inspection chamber 758 described above. The CI value of child 1 is measured.

  Then, after the inspection of the airtight state of the quartz crystal resonator 1 under a pressurized atmosphere is completed in the tenth inspection chamber 7510, the gate valve 76 provided on the downstream side in the X direction of the tenth inspection chamber 7510 is opened to open the pallet 8 After carrying out outside and carrying in the pallet 8 outside, the gate valve 76 is closed and manufacture of the several crystal oscillator 1 by this manufacturing apparatus 7 is completed.

  According to the manufacturing method of the crystal unit 1 according to the present embodiment, the operation effect by the manufacturing apparatus 7 according to the first to third embodiments and the operation effect by the modified example are included.

  It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For example, in the above-described embodiment, each examination room or the like is individually configured, but may be configured as a single examination room. Further, the temperature adjusting chamber is not limited to the one that lowers the temperature, but may be one that raises the temperature. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  The present invention can be preferably applied in the manufacturing process of a piezoelectric vibration device.

DESCRIPTION OF SYMBOLS 1 Crystal oscillator, oscillator 11 Main body housing | casing 12 Internal space 2 AT cut quartz crystal vibrating piece 3 Base 31 One main surface 32 Bottom part 33 Wall part 34 External terminal 35 for piezoelectric vibration elements Step part 36 Outer side surface 37 External terminal 38 Other main surface 4 Lid 51 Bonding member 52 Conductive bonding material 6 IC chip 7 Manufacturing device 71 Introduction chamber 72 Preheating chamber 721 First preheating chamber 722 Second preheating chamber 723 Third preheating chamber 73 Airtight sealing chamber 74 Temperature adjustment chamber 75 Inspection room 751 1st inspection room 752 2nd inspection room 753 3rd inspection room 754 4th inspection room 755 5th inspection room 756 6th inspection room 757 7th inspection room 758 8th inspection room 759 9th inspection room 7510 9th 10 Inspection room 76 Gate valve 8 Pallet 81 Mounting part 82 Reference work

Claims (7)

An internal space is formed by joining a plurality of sealing members, and one or more electronic component elements including a piezoelectric vibration element are hermetically sealed in the internal space, and the piezoelectric element serves as an external terminal that is electrically connected to the outside. In a piezoelectric vibration device manufacturing apparatus in which an external terminal for a piezoelectric vibration element connected to the vibration element is formed,
A hermetic sealing chamber that heat-bonds a plurality of sealing members in a vacuum atmosphere to form an internal space in a vacuum state and hermetically seals the electronic component element in the internal space;
An inspection room for inspecting the airtight state of the internal space of the piezoelectric vibration device, and
The inspection chamber includes a first inspection chamber for inspecting an airtight state of the internal space of the piezoelectric vibration device in a vacuum atmosphere, and an airtight state of the internal space of the piezoelectric vibration device in an atmosphere at a higher pressure than the first inspection chamber. And a second laboratory to inspect,
An apparatus for manufacturing a piezoelectric vibration device, wherein the piezoelectric vibration device is conveyed in the order of the hermetic sealing chamber, the first inspection chamber, and the second inspection chamber . In the manufacturing apparatus of the piezoelectric vibration device according to claim 1,
A preheating chamber for preheating the sealing member in a vacuum atmosphere is provided,
An apparatus for manufacturing a piezoelectric vibration device, wherein the piezoelectric vibration device is conveyed in the order of the preheating chamber, the hermetic sealing chamber, the first inspection chamber, and the second inspection chamber . In the manufacturing apparatus of the piezoelectric vibration device according to claim 1 or 2,
In the inspection room, in addition to the inspection of the airtight state of the internal space of the piezoelectric vibration device, the electrical characteristics of the piezoelectric vibration device using an external terminal for the piezoelectric vibration element are inspected. apparatus. In the manufacturing apparatus of the piezoelectric vibration device according to any one of claims 1 to 3,
In the inspection room, in addition to the inspection of the airtight state of the internal space of the piezoelectric vibration device, the temperature characteristic of the piezoelectric vibration device using the external terminal for the piezoelectric vibration element is inspected. . In the manufacturing apparatus of the piezoelectric vibration device according to any one of claims 1 to 4,
An apparatus for manufacturing a piezoelectric vibration device, comprising: a temperature adjustment chamber for adjusting a temperature of the piezoelectric vibration device to a preset reference temperature. In the manufacturing apparatus of the piezoelectric vibration device according to any one of claims 1 to 5,
In the second inspection chamber, an inspection of the airtight state of the internal space of the piezoelectric vibration device is performed under an atmosphere of atmospheric pressure or higher pressure . In the manufacturing apparatus of the piezoelectric vibration device according to any one of claims 1 to 6,
The piezoelectric vibration element is an element that performs a thickness-shear vibration.

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