JP5756675B2 - 光半導体素子用パッケージ及び光半導体装置 - Google Patents

光半導体素子用パッケージ及び光半導体装置 Download PDF

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Publication number
JP5756675B2
JP5756675B2 JP2011105100A JP2011105100A JP5756675B2 JP 5756675 B2 JP5756675 B2 JP 5756675B2 JP 2011105100 A JP2011105100 A JP 2011105100A JP 2011105100 A JP2011105100 A JP 2011105100A JP 5756675 B2 JP5756675 B2 JP 5756675B2
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optical semiconductor
ceramic wiring
wiring board
electrode
semiconductor element
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Japanese (ja)
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JP2012238640A5 (enExample
JP2012238640A (ja
Inventor
木村　康之
康之 木村
幹夫 巣山
幹夫 巣山
美鈴 待井
美鈴 待井
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2011105100A priority Critical patent/JP5756675B2/ja
Priority to US13/459,535 priority patent/US9106047B2/en
Publication of JP2012238640A publication Critical patent/JP2012238640A/ja
Publication of JP2012238640A5 publication Critical patent/JP2012238640A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2011105100A 2011-05-10 2011-05-10 光半導体素子用パッケージ及び光半導体装置 Active JP5756675B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011105100A JP5756675B2 (ja) 2011-05-10 2011-05-10 光半導体素子用パッケージ及び光半導体装置
US13/459,535 US9106047B2 (en) 2011-05-10 2012-04-30 Optical semiconductor element package and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011105100A JP5756675B2 (ja) 2011-05-10 2011-05-10 光半導体素子用パッケージ及び光半導体装置

Publications (3)

Publication Number Publication Date
JP2012238640A JP2012238640A (ja) 2012-12-06
JP2012238640A5 JP2012238640A5 (enExample) 2014-02-06
JP5756675B2 true JP5756675B2 (ja) 2015-07-29

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US (1) US9106047B2 (enExample)
JP (1) JP5756675B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013217796A1 (de) * 2013-09-05 2015-03-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, optoelektronische Vorrichtung und Verfahren zum Herstellen einer optoelektronischen Vorrichtung
JP2015225974A (ja) * 2014-05-28 2015-12-14 日立金属株式会社 Ｃａｎパッケージ半導体レーザ用治具
CN110226270B (zh) * 2017-01-20 2021-09-28 三菱电机株式会社 光模块
JP6988493B2 (ja) * 2018-01-11 2022-01-05 住友電気工業株式会社 光モジュール及びその製造方法
US20240292530A1 (en) 2021-06-21 2024-08-29 Kyocera Corporation Wiring board, electronic component storage package, and electronic device
CN113725303B (zh) * 2021-11-04 2022-02-11 至芯半导体(杭州)有限公司 斜面探测器件封装结构及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682641B2 (ja) * 1988-06-03 1997-11-26 株式会社リコー 半導体レーザー光源装置
US6522673B1 (en) * 1999-12-22 2003-02-18 New Focus, Inc. Method and apparatus for optical transmission
US6659659B1 (en) * 2001-04-11 2003-12-09 Optical Communication Products, Inc. High-speed optical sub-assembly utilizing ceramic substrate, direct coupling and laser welding
JP2003163382A (ja) 2001-11-29 2003-06-06 Matsushita Electric Ind Co Ltd 受光素子または発光素子用パッケージ
EP1468475A2 (en) 2002-01-18 2004-10-20 Oepic, Inc. High-speed to-can optoelectronic packages
DE10341433A1 (de) * 2003-09-09 2005-03-31 Braun Gmbh Beheizbarer Infrarot-Sensor und Infrarot-Thermometer mit einem derartigen Infrarot-Sensor
US7223629B2 (en) * 2003-12-11 2007-05-29 Intel Corporation Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header
JP2010186965A (ja) 2009-02-13 2010-08-26 Toshiba Corp 半導体パッケージおよびその作製方法
US20110317965A1 (en) 2009-05-12 2011-12-29 Sumitomo Electric Industries, Ltd. Optical subassembly with optical device having ceramic package

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US20120287955A1 (en) 2012-11-15
US9106047B2 (en) 2015-08-11
JP2012238640A (ja) 2012-12-06

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