JP5753348B2 - 非対称型半導体デバイス及び製造方法 - Google Patents
非対称型半導体デバイス及び製造方法 Download PDFInfo
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- JP5753348B2 JP5753348B2 JP2010109553A JP2010109553A JP5753348B2 JP 5753348 B2 JP5753348 B2 JP 5753348B2 JP 2010109553 A JP2010109553 A JP 2010109553A JP 2010109553 A JP2010109553 A JP 2010109553A JP 5753348 B2 JP5753348 B2 JP 5753348B2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
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- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Electrodes Of Semiconductors (AREA)
Description
12:半導体基板
14:高kゲート誘電体
16:閾値電圧調整材料
18:パターン形成された犠牲材料
20:第1の導電性スペーサ
22:第2の導電性スペーサ
24:ゲート・スタック
26:ゲート・スタックの第1の部分
28:ゲート・スタックの第2の部分
30:ソース及びドレイン延長部
32:誘電体スペーサ
34A:ソース
34B:ドレイン
Claims (12)
- nFETデバイス領域及びpFETデバイス領域を有する半導体基板と、
前記nFETデバイス領域内の高kゲート誘電体上に配置されたnFET非対称型ゲート・スタックであって、前記nFET非対称型ゲート・スタックは第2のnFET部分に横方向に隣接する第1のnFET部分を含み、前記第1のnFET部分は前記第2のnFET部分とは異なる閾値電圧を有し、前記第1のnFET部分は、下から上に、nFET閾値電圧調整材料及び少なくとも第1の導電性スペーサを含み、前記第2のnFET部分は、前記高kゲート誘電体の上に配置された少なくとも第2の導電性スペーサを含む、nFET非対称型ゲート・スタックと、
前記pFETデバイス領域内の前記高kゲート誘電体上に配置されたpFET非対称型ゲート・スタックであって、前記pFET非対称型ゲート・スタックは第2のpFET部分に横方向に隣接する第1のpFET部分を含み、前記第1のpFET部分は前記第2のpFET部分とは異なる閾値電圧を有し、前記第1のpFET部分は、下から上に、pFET閾値電圧調整材料及び少なくとも第1の導電性スペーサを含み、前記第2のpFET部分は、前記高kゲート誘電体の上に配置された少なくとも第2の導電性スペーサを含む、pFET非対称型ゲート・スタックと、
を含む半導体構造体であって、
前記nFET非対称型ゲート・スタックの前記第1の導電性スペーサは、前記nFETデバイス領域内の前記高kゲート誘電体及び前記nFET閾値電圧調整材料を含む材料スタック上に少なくとも1つのパターン形成された犠牲材料の露出された側壁上に少なくとも前記第1の導電性スペーサを形成することにより形成され、
前記nFET非対称型ゲート・スタックの前記第2の導電性スペーサは、前記nFETデバイス領域内の前記少なくとも1つのパターン形成された犠牲材料を除去する前に、前記nFETデバイス領域内の前記第1の導電性スペーサに横方向に隣接して少なくとも前記第2の導電性スペーサを形成することにより形成され、
前記pFET非対称型ゲート・スタックの前記第1の導電性スペーサは、前記pFETデバイス領域内の前記高kゲート誘電体及び前記pFET閾値電圧調整材料を含む材料スタック上に少なくとも1つのパターン形成された犠牲材料の露出された側壁上に少なくとも前記第1の導電性スペーサを形成することにより形成され、
前記pFET非対称型ゲート・スタックの前記第2の導電性スペーサは、前記pFETデバイス領域内の前記少なくとも1つのパターン形成された犠牲材料を除去する前に、前記pFETデバイス領域内の前記第1の導電性スペーサに横方向に隣接して少なくとも前記第2の導電性スペーサを形成することにより形成される、
半導体構造体。 - 前記nFET閾値電圧調整材料は、元素周期表のIIIB族からの少なくとも1つの元素の酸化物又は窒化物を含む希土類金属含有材料である、請求項1に記載の半導体構造体。
- 前記IIIB族元素は、La、Ce、Y、Sm、Er、及びTbの1つである、請求項2に記載の半導体構造体。
- 前記希土類金属含有材料は、La2O3又はLaNである、請求項2に記載の半導体構造体。
- Mがアルカリ土類金属であり、AがO、S及びハロゲン化物の1つであり、xが1又は2であるものとして、前記nFET閾値電圧調整材料は、式MAxの化合物を含むアルカリ土類金属含有材料である、請求項1に記載の半導体構造体。
- 前記pFET閾値電圧調整材料は、Al、Al2O3、Ge、GeO2、Tiの非導電性化合物、又はTaの非導電性化合物を含む、請求項1に記載の半導体構造体。
- 半導体構造体を製造する方法であって、
下から上に、高kゲート誘電体及び閾値電圧調整材料を含む材料スタック上に少なくとも1つのパターン形成された犠牲材料を形成するステップと、
前記少なくとも1つのパターン形成された犠牲材料の露出された側壁上に少なくとも第1の導電性スペーサを形成するステップであって、前記第1の導電性スペーサの基部は前記閾値電圧調整材料の表面上に配置される、ステップと、
前記少なくとも第1の導電性スペーサ及び前記少なくとも1つのパターン形成された犠牲材料によって保護されていない前記閾値電圧調整材料の露出された部分を除去して、前記高kゲート誘電体の表面を露出させるステップと、
前記少なくとも第1の導電性スペーサによって保護されていない、前記少なくとも1つのパターン形成された犠牲材料、前記閾値電圧調整材料の部分、及び前記高kゲート誘電体の部分を除去するステップと、
を含み、
前記閾値電圧調整材料の前記露出された部分を除去する前に、前記第1の導電性スペーサに横方向に隣接する少なくとも第2の導電性スペーサを形成するステップをさらに含む、方法。 - 半導体構造体を製造する方法であって、
下から上に、高kゲート誘電体及び閾値電圧調整材料を含む材料スタック上に少なくとも1つのパターン形成された犠牲材料を形成するステップと、
前記少なくとも1つのパターン形成された犠牲材料の露出された側壁上に少なくとも第1の導電性スペーサを形成するステップであって、前記第1の導電性スペーサの基部は前記閾値電圧調整材料の表面上に配置される、ステップと、
前記少なくとも第1の導電性スペーサ及び前記少なくとも1つのパターン形成された犠牲材料によって保護されていない前記閾値電圧調整材料の露出された部分を除去して、前記高kゲート誘電体の表面を露出させるステップと、
前記少なくとも第1の導電性スペーサによって保護されていない、前記少なくとも1つのパターン形成された犠牲材料、前記閾値電圧調整材料の部分、及び前記高kゲート誘電体の部分を除去するステップと、
を含み、
前記閾値電圧調整材料の前記露出された部分を除去した後、及び、前記少なくとも1つのパターン形成された犠牲材料を除去する前に、前記第1の導電性スペーサに横方向に隣接する少なくとも第2の導電性スペーサを形成するステップをさらに含む、方法。 - 前記少なくとも1つのパターン形成された犠牲材料、前記閾値電圧調整材料の部分、及び前記高kゲート誘電体の部分を除去した後に、種々のイオン注入及び誘電体スペーサの形成を行なうステップをさらに含む、請求項7又は8に記載の方法。
- 前記少なくとも1つのパターン形成された犠牲材料を形成する前に、前記高kゲート誘電体及び前記閾値電圧調整材料のスタックを形成するステップをさらに含み、前記スタックを形成するステップは、nFET閾値電圧調整材料を選択するステップを含む、請求項7又は8に記載の方法。
- 前記少なくとも1つのパターン形成された犠牲材料を形成する前に、前記高kゲート誘電体及び前記閾値電圧調整材料のスタックを形成するステップをさらに含み、前記スタックを形成するステップは、pFET閾値電圧調整材料を選択するステップを含む、請求項7又は8に記載の方法。
- 前記少なくとも1つのパターン形成された犠牲材料を形成する前に、前記高kゲート誘電体及び前記閾値電圧調整材料のスタックを形成するステップをさらに含み、前記スタックを形成するステップは、第1のデバイス領域においてnFET閾値電圧調整材料を選択し、第2のデバイス領域においてpFET閾値電圧調整材料を選択するステップを含む、請求項7又は8に記載の方法。
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