JP5751243B2 - 光電変換素子及び光電変換材料の製造方法 - Google Patents

光電変換素子及び光電変換材料の製造方法 Download PDF

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Publication number
JP5751243B2
JP5751243B2 JP2012259139A JP2012259139A JP5751243B2 JP 5751243 B2 JP5751243 B2 JP 5751243B2 JP 2012259139 A JP2012259139 A JP 2012259139A JP 2012259139 A JP2012259139 A JP 2012259139A JP 5751243 B2 JP5751243 B2 JP 5751243B2
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photoelectric conversion
compound
precursor
source
based precursor
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JP2012259139A
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Japanese (ja)
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JP2013153139A (ja
JP2013153139A5 (https=
Inventor
俊輔 小川
俊輔 小川
密太郎 梅原
密太郎 梅原
竹田 康彦
康彦 竹田
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Toyota Central R&D Labs Inc
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Toyota Central R&D Labs Inc
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Priority to JP2012259139A priority Critical patent/JP5751243B2/ja
Priority to PCT/JP2012/008183 priority patent/WO2013099180A1/en
Priority to EP12826634.3A priority patent/EP2798676B1/en
Publication of JP2013153139A publication Critical patent/JP2013153139A/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2012259139A 2011-12-26 2012-11-27 光電変換素子及び光電変換材料の製造方法 Expired - Fee Related JP5751243B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012259139A JP5751243B2 (ja) 2011-12-26 2012-11-27 光電変換素子及び光電変換材料の製造方法
PCT/JP2012/008183 WO2013099180A1 (en) 2011-12-26 2012-12-21 Photovoltaic conversion device and method of manufacturing photovoltaic conversion material
EP12826634.3A EP2798676B1 (en) 2011-12-26 2012-12-21 Photovoltaic conversion device and method of manufacturing photovoltaic conversion material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011282665 2011-12-26
JP2011282665 2011-12-26
JP2012259139A JP5751243B2 (ja) 2011-12-26 2012-11-27 光電変換素子及び光電変換材料の製造方法

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JP2013153139A JP2013153139A (ja) 2013-08-08
JP2013153139A5 JP2013153139A5 (https=) 2014-06-19
JP5751243B2 true JP5751243B2 (ja) 2015-07-22

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JP2012259139A Expired - Fee Related JP5751243B2 (ja) 2011-12-26 2012-11-27 光電変換素子及び光電変換材料の製造方法

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EP (1) EP2798676B1 (https=)
JP (1) JP5751243B2 (https=)
WO (1) WO2013099180A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104803410B (zh) * 2015-04-27 2016-08-31 武汉理工大学 水溶性铜锗硫量子点及其制备方法
JP2017034186A (ja) * 2015-08-05 2017-02-09 株式会社豊田中央研究所 光吸収層及びその製造方法、並びに、光電変換素子
CN113972299B (zh) * 2021-09-30 2024-03-22 华南理工大学 一种在SiO2衬底上生长硫化锗单晶薄膜的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101330110A (zh) * 2008-08-01 2008-12-24 中南大学 一种薄膜太阳电池的光吸收层材料及其制备方法
US8580157B2 (en) * 2009-02-20 2013-11-12 Kabushiki Kaisha Toyota Chuo Kenkyusho Sulfide and photoelectric element
JP5641284B2 (ja) * 2010-02-03 2014-12-17 独立行政法人国立高等専門学校機構 化合物半導体、光電素子及びその製造方法
JP2012182340A (ja) * 2011-03-02 2012-09-20 Sanyo Electric Co Ltd 化合物半導体及び太陽電池

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EP2798676B1 (en) 2017-03-15
JP2013153139A (ja) 2013-08-08
WO2013099180A1 (en) 2013-07-04
EP2798676A1 (en) 2014-11-05

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