JP5738528B2 - 共焦点パルス伸長器 - Google Patents
共焦点パルス伸長器 Download PDFInfo
- Publication number
- JP5738528B2 JP5738528B2 JP2009502878A JP2009502878A JP5738528B2 JP 5738528 B2 JP5738528 B2 JP 5738528B2 JP 2009502878 A JP2009502878 A JP 2009502878A JP 2009502878 A JP2009502878 A JP 2009502878A JP 5738528 B2 JP5738528 B2 JP 5738528B2
- Authority
- JP
- Japan
- Prior art keywords
- mirrors
- mirror
- pulse
- optical
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 claims description 89
- 230000007246 mechanism Effects 0.000 claims description 14
- 230000000977 initiatory effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 239000004606 Fillers/Extenders Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005542 laser surface treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/394,512 US7415056B2 (en) | 2006-03-31 | 2006-03-31 | Confocal pulse stretcher |
| US11/394,512 | 2006-03-31 | ||
| PCT/US2007/007201 WO2007126693A2 (en) | 2006-03-31 | 2007-03-23 | Confocal pulse stretcher |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009532864A JP2009532864A (ja) | 2009-09-10 |
| JP2009532864A5 JP2009532864A5 (enExample) | 2010-05-13 |
| JP5738528B2 true JP5738528B2 (ja) | 2015-06-24 |
Family
ID=38575191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009502878A Active JP5738528B2 (ja) | 2006-03-31 | 2007-03-23 | 共焦点パルス伸長器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7415056B2 (enExample) |
| JP (1) | JP5738528B2 (enExample) |
| KR (1) | KR101357012B1 (enExample) |
| TW (1) | TWI343681B (enExample) |
| WO (1) | WO2007126693A2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7856044B2 (en) * | 1999-05-10 | 2010-12-21 | Cymer, Inc. | Extendable electrode for gas discharge laser |
| US7897947B2 (en) * | 2007-07-13 | 2011-03-01 | Cymer, Inc. | Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave |
| US8653437B2 (en) | 2010-10-04 | 2014-02-18 | Cymer, Llc | EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods |
| US7671349B2 (en) | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
| US8654438B2 (en) | 2010-06-24 | 2014-02-18 | Cymer, Llc | Master oscillator-power amplifier drive laser with pre-pulse for EUV light source |
| US7643529B2 (en) | 2005-11-01 | 2010-01-05 | Cymer, Inc. | Laser system |
| EP1952493A4 (en) * | 2005-11-01 | 2017-05-10 | Cymer, LLC | Laser system |
| US7885309B2 (en) * | 2005-11-01 | 2011-02-08 | Cymer, Inc. | Laser system |
| US7999915B2 (en) * | 2005-11-01 | 2011-08-16 | Cymer, Inc. | Laser system |
| US7778302B2 (en) * | 2005-11-01 | 2010-08-17 | Cymer, Inc. | Laser system |
| US20090296755A1 (en) * | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
| US7630424B2 (en) * | 2005-11-01 | 2009-12-08 | Cymer, Inc. | Laser system |
| US7715459B2 (en) * | 2005-11-01 | 2010-05-11 | Cymer, Inc. | Laser system |
| US7920616B2 (en) * | 2005-11-01 | 2011-04-05 | Cymer, Inc. | Laser system |
| US20090296758A1 (en) * | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
| US7746913B2 (en) | 2005-11-01 | 2010-06-29 | Cymer, Inc. | Laser system |
| US8158960B2 (en) | 2007-07-13 | 2012-04-17 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7620080B2 (en) * | 2007-08-23 | 2009-11-17 | Corning Incorporated | Laser pulse conditioning |
| US7812329B2 (en) * | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
| US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
| US20090250637A1 (en) * | 2008-04-02 | 2009-10-08 | Cymer, Inc. | System and methods for filtering out-of-band radiation in EUV exposure tools |
| DE102008036572B4 (de) * | 2008-07-31 | 2013-12-05 | Carl Zeiss Laser Optics Gmbh | Vorrichtung zum Bearbeiten von optischen Impulsen |
| US8519366B2 (en) * | 2008-08-06 | 2013-08-27 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
| JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| US8462425B2 (en) | 2010-10-18 | 2013-06-11 | Cymer, Inc. | Oscillator-amplifier drive laser with seed protection for an EUV light source |
| KR102163606B1 (ko) * | 2013-03-27 | 2020-10-08 | 고쿠리쓰다이가쿠호진 규슈다이가쿠 | 레이저 어닐링 장치 |
| WO2015008405A1 (ja) * | 2013-07-18 | 2015-01-22 | 三菱電機株式会社 | ガスレーザ装置 |
| US9525265B2 (en) * | 2014-06-20 | 2016-12-20 | Kla-Tencor Corporation | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
| US9357625B2 (en) * | 2014-07-07 | 2016-05-31 | Asml Netherlands B.V. | Extreme ultraviolet light source |
| CN104319615B (zh) * | 2014-11-02 | 2017-12-26 | 中国科学院光电技术研究所 | 一种基于双分束元件的准分子激光脉冲展宽装置 |
| US9709897B2 (en) | 2015-10-28 | 2017-07-18 | Cymer, Llc | Polarization control of pulsed light beam |
| JP6762364B2 (ja) * | 2016-07-26 | 2020-09-30 | ギガフォトン株式会社 | レーザシステム |
| CN109143559B (zh) * | 2018-10-23 | 2023-07-25 | 广东华奕激光技术有限公司 | 一种小型化的脉冲展宽器 |
| TW202522128A (zh) | 2019-10-16 | 2025-06-01 | 美商希瑪有限責任公司 | 用於減少光斑之堆疊共焦脈衝拉伸器系列 |
| CN118104087A (zh) * | 2021-11-24 | 2024-05-28 | 极光先进雷射株式会社 | 脉冲扩展器和电子器件的制造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2783890B2 (ja) * | 1990-03-08 | 1998-08-06 | 東京電力株式会社 | レーザ発振器 |
| US6067311A (en) | 1998-09-04 | 2000-05-23 | Cymer, Inc. | Excimer laser with pulse multiplier |
| US6625191B2 (en) | 1999-12-10 | 2003-09-23 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
| US6535531B1 (en) | 2001-11-29 | 2003-03-18 | Cymer, Inc. | Gas discharge laser with pulse multiplier |
| US6693939B2 (en) * | 2001-01-29 | 2004-02-17 | Cymer, Inc. | Laser lithography light source with beam delivery |
| US6704340B2 (en) | 2001-01-29 | 2004-03-09 | Cymer, Inc. | Lithography laser system with in-place alignment tool |
| US7230964B2 (en) * | 2001-04-09 | 2007-06-12 | Cymer, Inc. | Lithography laser with beam delivery and beam pointing control |
| US7061959B2 (en) | 2001-04-18 | 2006-06-13 | Tcz Gmbh | Laser thin film poly-silicon annealing system |
| US7167499B2 (en) | 2001-04-18 | 2007-01-23 | Tcz Pte. Ltd. | Very high energy, high stability gas discharge laser surface treatment system |
| US7009140B2 (en) | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
| US6928093B2 (en) * | 2002-05-07 | 2005-08-09 | Cymer, Inc. | Long delay and high TIS pulse stretcher |
| US6798812B2 (en) | 2002-01-23 | 2004-09-28 | Cymer, Inc. | Two chamber F2 laser system with F2 pressure based line selection |
| JP4416481B2 (ja) | 2003-11-18 | 2010-02-17 | ギガフォトン株式会社 | 光学的パルス伸長器および露光用放電励起ガスレーザ装置 |
-
2006
- 2006-03-31 US US11/394,512 patent/US7415056B2/en active Active
-
2007
- 2007-03-03 TW TW096107346A patent/TWI343681B/zh active
- 2007-03-23 JP JP2009502878A patent/JP5738528B2/ja active Active
- 2007-03-23 WO PCT/US2007/007201 patent/WO2007126693A2/en not_active Ceased
- 2007-03-23 KR KR1020087026061A patent/KR101357012B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080110863A (ko) | 2008-12-19 |
| TW200742208A (en) | 2007-11-01 |
| KR101357012B1 (ko) | 2014-02-03 |
| WO2007126693A2 (en) | 2007-11-08 |
| TWI343681B (en) | 2011-06-11 |
| WO2007126693A3 (en) | 2008-11-27 |
| US7415056B2 (en) | 2008-08-19 |
| JP2009532864A (ja) | 2009-09-10 |
| US20070237192A1 (en) | 2007-10-11 |
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