JP5720305B2 - Solid-state imaging device manufacturing method, solid-state imaging device, and electronic apparatus - Google Patents

Description

  The present disclosure relates to a method for manufacturing a solid-state imaging device in which photoelectric conversion units are arranged on a curved surface curved in three dimensions, a solid-state imaging device obtained by the manufacturing method, and an electronic apparatus including the solid-state imaging device.

  An imaging apparatus such as a camera in which a solid-state imaging element and an imaging lens are combined is configured by arranging an imaging lens on the light receiving surface side of the solid-state imaging element. In such an imaging apparatus, when a subject is imaged by an imaging lens, a focal position shift occurs between the central portion and the peripheral portion of the imaging surface due to lens aberration called curvature of field. Therefore, a configuration has been proposed in which a curved surface that is curved three-dimensionally according to the curvature of field of the imaging lens is formed, and the photoelectric conversion unit is arranged with the curved surface as an imaging surface (light receiving surface) of the solid-state imaging device. . This eliminates the need to correct field curvature (lens aberration) by combining a plurality of lenses. For example, the following two methods are disclosed as a method for manufacturing a solid-state imaging device in which photoelectric conversion units are arranged on such a curved surface.

  The first method is a method using a package body having a curved surface in the element arrangement region and a suction hole formed in the bottom. In this case, the solid-state imaging device is placed facing the curved surface to which the adhesive is applied, and the gap between the solid-state imaging device and the curved surface is reduced through the suction hole so that the solid-state imaging device is in close contact with the curved surface. And fix with a fixing agent (see Patent Document 1 below).

  The second method is a method using a wiring board formed of a material having an opening and a thermal expansion coefficient larger than that of the solid-state imaging device. In this case, first, the wiring board and the solid-state imaging device are joined via the protruding electrodes. The contraction rate of the wiring board becomes larger than the contraction rate of the solid-state image sensor due to the cooling action after heating and cooling, and the solid-state image sensor is bent by applying a compressive force due to the difference in the contraction rate (see Patent Document 2 below). ).

JP 2003-243635 A (particularly paragraphs 0013 to 0014 and FIG. 2) JP 2004-146633 A (particularly paragraphs 0017 to 0020 and FIG. 1)

  However, in any of the first method and the second method described above, the entire chip constituting the solid-state imaging device is curved. For this reason, this is a method in which stress is applied to the peripheral end portion of the chip having a rough surface due to division by dicing, and cracks are likely to occur in the chip from the peripheral end portion side.

  Therefore, the present disclosure aims to provide a method for manufacturing a solid-state imaging device that can leave a flat portion around a curved portion obtained by three-dimensionally bending an imaging region, and thereby hardly cause damage such as cracks. And Furthermore, the present disclosure is a solid-state imaging device obtained by such a manufacturing method, a highly reliable solid-state imaging device that has a three-dimensional curved portion and prevents damage such as cracks, and the solid-state imaging device An object is to provide an electronic device using the element.

  In order to achieve such an object, a method for manufacturing a solid-state imaging device according to the present disclosure includes the following procedure. First, an element chip in which photoelectric conversion parts are arranged on one main surface side is manufactured. Further, a pedestal having an opening and a periphery of the opening shaped as a flat surface is prepared. Then, the element chip is mounted on the flat surface of the pedestal in a state where the opening of the pedestal is closed and the one main surface side on which the photoelectric conversion units are arranged faces upward. Thereafter, in a state where the element chip is fixed to the flat surface of the pedestal, the inside of the opening of the pedestal closed by the element chip is subjected to volume contraction. Thereby, the element chip is curved three-dimensionally toward the opening side.

  According to the manufacturing method described above, in the pedestal, only the center portion of the element chip arranged to close the opening is three-dimensionally curved while the periphery of the element chip is fixed to the flat surface around the opening. For this reason, the peripheral part of the element chip continuing from the peripheral end of the curved part becomes a flat part fixed to the flat surface of the pedestal. Therefore, the peripheral portion of the element chip is left as a flat portion to which no stress due to bending is applied.

  Moreover, the solid-state image sensor of this indication is provided with the base, the element chip supported by the base, and the photoelectric conversion part provided in the element chip. The pedestal has an opening and the periphery of the opening is shaped as a flat surface. The element chip includes a curved portion in which a portion corresponding to the opening of the pedestal is curved three-dimensionally toward the opening side, and a flat portion that is extended from the peripheral end of the curved portion and supported by the flat surface of the pedestal. Have. The photoelectric conversion part is arranged on the concave curved surface side of the bending part in the element chip.

  The electronic device of the present disclosure is also an electronic device including the solid-state imaging device having such a configuration, and includes an optical system that guides incident light to the photoelectric conversion unit of the solid-state imaging device.

  As described above, according to the present disclosure, it is possible to curve only the central portion in three dimensions while leaving the peripheral portion of the element chip as a flat portion to which stress due to bending is not applied. For this reason, it becomes possible to manufacture a solid-state imaging device having a three-dimensional curved portion at the center of the element chip without causing damage such as cracks. As a result, it is possible to improve the reliability of a solid-state imaging device having a three-dimensional curved portion and an electronic apparatus using the solid-state imaging device.

It is a schematic block diagram of the solid-state image sensor obtained by applying this indication. It is sectional drawing and a top view of a base used for the manufacturing method of a 1st embodiment. It is sectional process drawing which shows the manufacturing method of 1st Embodiment. It is sectional process drawing which shows the manufacturing method of 2nd Embodiment. It is sectional drawing and a top view of the base used for the manufacturing method of 3rd Embodiment. It is sectional process drawing which shows the manufacturing method of 3rd Embodiment. It is sectional drawing and a top view of the base used for the manufacturing method of 4th Embodiment. It is sectional process drawing which shows the manufacturing method of 4th Embodiment. It is sectional drawing and a top view of the base used for the manufacturing method of 5th Embodiment. It is a principal part top view which shows the modification of the base used for the manufacturing method of 5th Embodiment. It is sectional process drawing which shows the manufacturing method of 5th Embodiment. It is a block diagram of the electronic device of this indication.

Hereinafter, embodiments of the present disclosure will be described in the following order based on the drawings.
1. 1. Schematic configuration example of solid-state image sensor according to embodiment First Embodiment (Example in which element chip is bent by curing shrinkage of resin)
3. Second Embodiment (Example in which element chip is bent by decompression)
4). Third embodiment (example using a pedestal as a package)
5). Fourth Embodiment (Example of fixing an element chip to a pedestal by vacuum suction)
6). Fifth embodiment (example in which the shape of the bending portion is controlled by the shape of the pedestal)
7). Sixth Embodiment (Embodiment of Electronic Device)
In addition, in each embodiment and modification, the same code | symbol is attached | subjected to a common component, and the overlapping description is abbreviate | omitted.

<< 1. Schematic configuration example of solid-state image sensor >>
FIG. 1 shows a schematic configuration of a MOS type solid-state imaging device as an example of a solid-state imaging device manufactured by applying the manufacturing method of each embodiment of the present disclosure.

  The solid-state imaging device shown in this figure has an imaging region 4 in which a plurality of pixels 3 including a photoelectric conversion unit are two-dimensionally arranged in the center on the one main surface side of the element chip 2. A pixel circuit composed of a plurality of transistors (so-called MOS transistors) and capacitive elements is connected to each pixel 3 arranged in the imaging region 4 together with a photoelectric conversion unit. Note that some of the pixel circuits may be shared by a plurality of photoelectric conversion units. In this case, the pixel 3 is configured as a unit of a shared pixel structure including a plurality of photoelectric conversion units, a plurality of transfer transistors, one shared floating diffusion, and one other shared pixel transistor. You can also Further, the pixel circuit arranged together with the photoelectric conversion unit in the pixel 3 may be provided on the back surface opposite to the surface on which the photoelectric conversion unit is provided.

  Peripheral circuits such as a vertical drive circuit 5, a column signal processing circuit 6, a horizontal drive circuit 7, and a system control circuit 8 are provided in the peripheral portion of the imaging region 4 as described above.

  The vertical drive circuit 5 is configured by, for example, a shift register, selects a pixel drive line 9 wired to the imaging region 4, supplies a pulse for driving the pixel 3 to the selected pixel drive line 9, and The pixels 3 arranged in 4 are driven in units of rows. That is, the vertical drive circuit 5 selectively scans each pixel 3 arranged in the imaging region 4 in the vertical direction sequentially in units of rows. Then, a pixel signal based on the signal charge generated according to the amount of light received in each pixel 3 is supplied to the column signal processing circuit 6 through the vertical signal line 10 wired perpendicular to the pixel drive line 9.

  The column signal processing circuit 6 is disposed for each column of the pixels 3, for example, and performs signal processing such as noise removal on the signal output from the pixels 3 for one row for each pixel column. That is, the column signal processing circuit 6 performs signals such as correlated double sampling (CDS), signal amplification, and analog / digital conversion (AD) to remove fixed pattern noise unique to a pixel. Process.

  The horizontal drive circuit 7 is configured by, for example, a shift register, and sequentially outputs horizontal scanning pulses, thereby selecting each of the column signal processing circuits 6 in order and outputting a pixel signal from each of the column signal processing circuits 6.

  The system control circuit 8 receives an input clock and data for instructing an operation mode and outputs data such as internal information of the solid-state imaging device 1. That is, in the system control circuit 8, based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, the clock signal and the control signal that are the reference for the operation of the vertical drive circuit 5, the column signal processing circuit 6, the horizontal drive circuit 7, and the like. Is generated. These signals are input to the vertical drive circuit 5, the column signal processing circuit 6, the horizontal drive circuit 7, and the like.

  The peripheral circuits 5 to 8 as described above and the pixel circuit provided in the imaging region 4 constitute a drive circuit that drives each pixel.

  In addition, in a solid-state imaging device manufactured by applying the manufacturing method of each embodiment of the present disclosure described below, the center portion of the element chip 2 is curved in a three-dimensional manner as described in detail in each embodiment. The unit 11 is configured. The periphery of the curved portion 11 is configured as a flat portion 13 having a flat surface. The imaging region 4 described above is arranged on the concave curved surface side in the bending portion 11. On the other hand, the peripheral circuits 5 to 8 are arranged in the curved portion 11 and the flat portion 13 around the imaging region 4. A part of the peripheral circuits 5 to 8 may be disposed at a position where the peripheral circuits 5 to 8 are stacked on the imaging region 4.

  As a modification of the element chip 2, terminal electrodes (extracted from the pixel circuit of each pixel 3 and the peripheral circuits 5 to 8) are provided on the back surface of the imaging region 4 on the side opposite to the photoelectric conversion unit disposed in each pixel 3. The element chip 2a may be provided with a chip side electrode). In this case, the terminals connected to these drive circuits are drawn out to the opposite side of the surface on which the photoelectric conversion unit is provided via through-chip vias (Through Silicon via: TSV, Through Chip Via: TCV). Note that the solid-state imaging device of the present disclosure can be applied to either a front-illuminated type or a back-illuminated type configuration. That is, in the case of a front-illuminated solid-state imaging device, as shown in the drawing, an imaging region 4 in which pixels including photoelectric conversion units and pixel transistors are arranged is formed on the concave curved surface side of an element chip 2 formed of a semiconductor substrate. The Peripheral circuits 5 to 8 are also formed on the concave curved surface side, a multilayer wiring layer in which a plurality of layers of wirings are arranged via an interlayer insulating film is formed thereon, and a color filter and an on-chip lens are further formed thereon. It is formed. On the other hand, in the case of a back-illuminated solid-state imaging device, an imaging region 4 having a photoelectric conversion portion is formed on the concave curved surface side of the element chip 2 formed of a thinned semiconductor substrate, and a color filter is formed on the concave curved surface side. And an on-chip lens is formed. Further, a pixel transistor and peripheral circuits 5 to 8 are formed on the convex curved surface side opposite to the concave curved surface, and a multilayer wiring layer in which a plurality of layers of wirings are arranged via an interlayer insulating film is formed thereon.

  In the following embodiments, a manufacturing method and a detailed configuration of a solid-state imaging device including such element chips 2 and 2a will be described.

≪2. First Embodiment (Example in which element chip is bent by curing shrinkage of resin) >>
[Configuration of pedestal used in manufacturing method of first embodiment]
FIG. 2 is a cross-sectional view and a plan view of the base 21 used in the manufacturing method of the first embodiment. The pedestal 21 shown in this figure has an opening 23 in the center. One surface of the pedestal 21 provided with the opening 23 is shaped as a flat surface 25 around the opening 23.

  The opening 23 has an outer shape that matches the curvature of field (lens aberration) of an optical system that combines a lens and a plurality of lenses that are used in combination with the solid-state imaging device manufactured here. If a lens having a normal outer shape is a circular shape, the opening shape of the opening 23 in a plan view is preferably a circle (perfect circle), and four corners of a square are curved. It may be a shape. Further, the inner wall portion of the opening 23 on the flat surface 25 side has a tapered shape in which the opening diameter increases toward the flat surface 25 side. The angle θ formed by the side wall of the opening 23 and the extended surface of the flat surface 25 is less than θ = 90 °, and is preferably about θ = 45 ° as an example. As described above, it is particularly preferable that the portion where the opening diameter is widened in the opening 23 has a concave curved shape with respect to the flat surface 25. The curvature of curvature is a curvature that matches the curvature of field of an optical system such as a lens used in combination with the element chip (2) described with reference to FIG. Furthermore, it is particularly preferable that the boundary portion from the portion where the opening diameter is widened to the flat surface 25 in the opening 23, that is, the edge portion of the opening 23, is configured as a convex curved surface. Further, the opening width w1 of the opening 23 on the flat surface 25 side (including the portion where the opening diameter is widened) is such that the imaging region (4) of the element chip (2) described with reference to FIG. It is assumed that it is about.

  The flat surface 25 is provided over the entire circumference of the opening 23. The flat surface 25 has a width w2 that supports the periphery of the element chip (2) so that at least the imaging region (4) of the element chip (2) described with reference to FIG. have. The entire circumference or a part of the outer periphery of the flat surface 25 may be configured as a surface higher than the flat surface 25 in order to facilitate alignment when the element chip (2) is placed. When such alignment is not necessary, the entire surface of one surface of the base 21 may be a flat surface 25 having the same height.

  The base 21 as described above is provided with a bottom plate 27 for closing the opening 23 on the surface opposite to the side on which the flat surface 25 is provided. The bottom plate 27 may be formed integrally with the pedestal 21 or may be formed separately from the pedestal 21 as long as the opening 23 can be closed in a sealed state. The bottom plate 27 may be configured as a package in which wiring and terminals are formed.

  Such a pedestal 21 is not particularly limited in its constituent materials.

[Production Method of First Embodiment]
FIG. 3 is a cross-sectional process diagram illustrating the method for manufacturing the solid-state imaging device of the first embodiment. The manufacturing method of the first embodiment shown in FIG. 3 is a method of manufacturing a solid-state imaging device using the pedestal 21 having the above-described configuration, and the manufacturing method of the first embodiment will be described below based on this drawing.

  First, as shown in FIG. 3A, an uncured resin 31 is filled in the opening 23 of the base 21 whose bottom is closed by the bottom plate 27. The resin 31 is made of, for example, a thermosetting resin, and a material having a high cure shrinkage rate is preferably used. The uncured resin 31 used here also acts as an adhesive between the base 21 and the element chip after curing. As such a resin 31, for example, an epoxy resin is used. The resin material can be used with a cure shrinkage of about 1 to 8% or more by adjusting the filler content, for example.

  The filling amount of the resin 31 into the opening 23 is such that it is supplied to the flat surface 25 of the pedestal 21 in advance so that it becomes an adhesive between the element chip and the pedestal 21 to be placed next on the pedestal 21. Suppose that Further, the filling amount of the resin 31 into the opening 23 is such that when the pedestal 21 and the resin 31 are subsequently heated, the uncured resin 31 expands and the resin 31 is also supplied onto the flat surface 25 of the pedestal 21. It may be a degree.

  Next, as illustrated in FIG. 3B, the element chip 2 is placed on the flat surface 25 of the pedestal 21 in a state where the opening 23 of the pedestal 21 is closed. At this time, the imaging region 4 is placed in the range of the opening 23 with the formation surface of the imaging region 4 in the element chip 2 (ie, the formation surface of the photoelectric conversion unit) facing upward. Further, the periphery of the imaging region 4 is supported by the flat surface 25 of the pedestal 21 over the entire circumference. In this state, the peripheral circuits 5 to 8 arranged around the imaging region 4 may be arranged corresponding to the flat surface 25 and a part thereof may be arranged within the range of the opening 23. When the uncured resin 31 is supplied on the flat surface 25 of the pedestal 21, the uncured resin 31 is sandwiched between the flat surface 25 of the pedestal 21 and the element chip 2 as an adhesive. Let

  In this state, the resin 31 is heated. The resin 31 may be heated by, for example, heating the pedestal 21 indirectly, and the bottom plate 27 may also be heated as necessary. When the element chip 2 is placed directly on the flat surface 25 of the pedestal 21, the resin 31 is placed on the flat surface 25 of the pedestal 21 due to the expansion of the uncured resin 31 during the heating process. You may supply. Even in this case, the uncured resin 31 is sandwiched between the flat surface 25 of the base 21 and the element chip 2 as an adhesive.

  The heating of the resin 31 as described above is performed in a range that does not affect the element chip 2 and at a temperature at which the curing of the resin 31 is started, and the curing of the resin 31 is advanced. For example, when the above-described epoxy resin is used as the resin 31, heating is performed at 160 ° C. for about 1 hour. The element chip 2 is fixed to the flat surface 25 of the base 21 by such curing of the resin 31. At this time, it is important that the entire periphery of the periphery of the element chip 2 is fixed to the flat surface 25.

In addition, as long as the adhesive action of the resin 31 is obtained before the curing of the resin 31 is completed, the procedure of placing the element chip 2 on the pedestal 21 in the process of heating the resin 31 may be used.
In this case, first, the resin 31 is filled into the opening 23 of the base 21, and then the base 21 is heated to expand the resin 31 together with the base 21. Next, after placing the element chip 2 on the pedestal 21 before the resin 31 is cured, the resin 31 is heated to a temperature that does not affect the element chip 2 and starts to cure the resin 31. Then, the resin 31 is cured.

  Thereafter, as shown in FIG. 3C, in a state where the element chip 2 is fixed to the flat surface 25 of the pedestal 21, the resin 31 filled in the opening 23 of the pedestal 21 is cooled from the heated state to room temperature. Thereby, the curing shrinkage of the resin 31 proceeds, and the volume shrinks further than the uncured state before heating.

  Due to the curing shrinkage of the resin 31, the central portion arranged corresponding to the opening 23 of the pedestal 21 in the element chip 2 is pulled toward the inside of the opening 23 filled with the resin 31, and three-dimensionally. The curved portion 11 is shaped as a curved portion. The curved shape of the curved portion 11 is a shape that follows the inner wall shape of the opening 23 on the flat surface 25 side of the pedestal 21. Then, like the planar shape of the opening 23 of the pedestal 21, for example, it is shaped into a shape having a circular bottom. Further, if the shape of the opening 23 is a shape in which four corners of a square are curved, a three-dimensional curve having a circular bottom at a portion close to the top of the bending portion 11 is formed. At this time, by fixing the entire circumference of the periphery of the element chip 2 to the flat surface 25, stress due to curing shrinkage of the resin 31 can be applied uniformly to the central portion of the element chip 2 corresponding to the opening 23. . Thereby, the curved part 11 curved in three dimensions can be formed without generating "wrinkles".

  In order to sufficiently fix the entire circumference of the periphery of the element chip 2 to the flat surface 25, the outer shape of the element chip 2 is maintained so that the flat portion 13 is maintained to have a width larger than a certain level. It is important to adjust the width w1 of the opening 23. As an example, if the shape of the element chip 2 is an outer shape of 4 mm × 4 mm and a thickness of about 15 μm, the flat part 13 is set to remain with a width of 0.3 mm or more on the entire circumference of the element chip 2.

  Further, since the inner wall of the opening 23 of the base 21 is tapered and the edge portion of the opening 23 is a convex curved surface, the stress at the time of bending is applied to the element chip 2 portion corresponding to the edge of the opening 23. Can be prevented and cracking of the element chip 2 at this portion can be prevented.

  On the other hand, the periphery of the bending portion 11 in the element chip 2 is fixed to the flat surface 25 of the pedestal 21 and is not curved, and remains as the flat portion 13. The flat portion 13 is left over the entire circumference of the bending portion 11.

  The curved portion 11 formed on the element chip 2 preferably has a curvature that matches the curvature of field of an optical system such as a lens used in combination with the element chip 2, and is about 10% to 20%, for example, 17 as an example. % Curvature. The shape of the curved portion 11 is controlled mainly by the shape of the inner wall of the opening 23 on the flat surface 25 side. The curvature of the curved portion 11 is adjusted by adjusting the inner wall shape of the opening 23 on the flat surface 25 side, the volume shrinkage rate (curing shrinkage rate) when the resin 31 is cured, and the volume of the resin 31 filled in the opening 23. Is done. If it is desired to increase the curvature of the bending portion 11, the resin 31 having a large curing shrinkage rate is used, or the volume of the opening 23 is increased to increase the volume of the resin 31 filled in the opening 23. These are used in combination as appropriate.

  Further, the thickness of the element chip 2 may be adjusted in order to bend the element chip 2 in a three-dimensional manner having a desired curvature without difficulty. For this reason, it is preferable to make the thickness of the element chip 2 smaller as the bottom area of the bending portion 11 is smaller than when the bottom area of the bending portion 11 is large.

  As described above, the solid-state imaging device 1-1 having the curved portion 11 is formed. After the solid-state imaging device 1 is formed, the pedestal 21 and the resin 31 may be thinned from the back side as necessary. If the shape of the curved portion 11 can be maintained, the element chip 2 may be peeled off from the base 21 and the resin 31 to form the solid-state imaging device 1-1. In order to facilitate such peeling of the element chip 2, a release agent may be applied to the back surface of the element chip 2 (the surface facing the pedestal 21) before placing the element chip 2 on the pedestal 21. good. Further, for fixing the pedestal 21 and the element chip 2, a thermosetting resin 31 filled in the opening 23 was used as an adhesive. However, for fixing the pedestal 21 and the element chip 2, in addition to the resin 31, a photocurable resin may be used as an adhesive in the opening 23. In this case, the element chip 2 is placed on the flat surface 25 of the expanded pedestal 21 while sandwiching an adhesive made of a photocurable resin that is cured by irradiation with long wavelength light. In this state, the adhesive is cured by light irradiation with a wavelength that transmits the element chip 2, and the fixing is performed. As an example, if the element chip 2 is made of single crystal silicon, light irradiation using long wavelength light with a wavelength of about 700 nm or more is performed. Accordingly, the adhesive is cured by the long wavelength light that has passed through the element chip 2 and reached the photocurable resin.

[Solid-state imaging device of first embodiment]
As shown in FIG. 1, the solid-state imaging device 1-1 obtained by the above procedure is configured as a curved portion 11 in which the central portion of the device chip 2 is curved three-dimensionally. Moreover, the flat part 13 extended from the peripheral part of this curved part 11 is provided. The flat portion 13 is disposed on the entire circumference of the bending portion 11 and constitutes the same surface.

  An imaging region 4 in which photoelectric conversion units are arranged is disposed on the concave curved surface side of the curved portion 11. Such a curved portion 11 has such a curvature that the photoelectric conversion unit is arranged along the curvature of field in accordance with the curvature of field of an optical system such as a lens used in combination with the solid-state imaging device 1-1. Suppose that there is. For this reason, it is preferable that the bottom surface of the bending part 11 is circular.

  The flat portion 13 is provided with peripheral circuits 5 to 8 arranged around the imaging region 4. The peripheral circuits 5 to 8 may be disposed on the flat portion 13 and a part thereof may be disposed on the bending portion 11. The flat portion 13 is provided with terminals drawn from the peripheral circuits 5 to 8 and can be connected to an external circuit by using the terminals. At this time, since the terminals are provided on the flat portion 13, good workability for connection to an external circuit such as bonding is ensured. However, the terminals drawn out from the peripheral circuits 5 to 8 are not limited to being provided in the flat portion 13, and may be arranged in the bending portion 11, and further drawn out to the convex curved surface side in the bending portion 11. Also good.

  Further, in the solid-state imaging device 1-1, the pedestal 21 is bonded to the convex curved surface side of the bending portion 11 of the element chip 2 in a state where the bending portion 11 of the element chip 2 is inserted into the opening 23 of the pedestal 21 described above. Has been. The element chip 2 and the pedestal 21 are fixed around the entire circumference of the curved portion 11 with the resin 31 sandwiched between the flat surface 25 and the element chip 2 as an adhesive. The opening 23 of the pedestal 21 is filled with a resin 31, and the shape of the curved portion 11 is secured by the resin 31.

[Effect of the first embodiment]
According to the first embodiment as described above, in the pedestal 21, in the state where the periphery of the element chip 2 is fixed to the flat surface 25 around the opening 23, the center of the element chip 2 arranged by closing the opening 23 is arranged. Only the part is curved in three dimensions. The peripheral portion of the element chip 2 that continues from the peripheral end of the bending portion 11 formed by the bending is left as the flat portion 13 that is fixed to the flat surface 25 of the base 21. Therefore, it is possible to leave the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied.

  The curvature of the curved portion 11 can be adjusted by the shape of the inner wall of the opening 23 on the flat surface 25 side of the pedestal 21, the curing shrinkage rate of the resin 31 filling the opening 23, and the volume of the resin 31 (volume of the opening 23). . For this reason, it is possible to control the curvature of the bending part 11 in a wide range with high accuracy.

  As described above, according to the first embodiment, it is possible to leave the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied, and to form only the central portion as the three-dimensional curved portion 11. . For this reason, it becomes possible to manufacture the solid-state image sensor 1-1 provided with the three-dimensional curved part 11 without generating damage, such as a crack. As a result, it is possible to improve the reliability of the solid-state imaging device 1-1 including the three-dimensional curved portion 11.

≪3. Second Embodiment (Example in which element chip is bent by decompression) >>
[Configuration of Pedestal Used for Manufacturing Method of Second Embodiment]
The pedestal 21 used in the manufacturing method of the second embodiment is the same as the pedestal 21 described with reference to FIG. 2 in the first embodiment, and an exhaust system capable of exhausting the opening 23 is attached. To do. This exhaust system may be configured to exhaust the gas in the opening 23 from the bottom plate 27 side that closes the opening 23 of the base 21 from one side, for example. Further, a hole for exhaust may be provided between the base 21 or the base 21 and the bottom plate 27, and the gas in the opening 23 may be exhausted from the hole.

[Manufacturing Method of Second Embodiment]
FIG. 4 is a cross-sectional process diagram illustrating a method for manufacturing the solid-state imaging device of the second embodiment. The manufacturing method will be described below with reference to this figure.

  First, as shown in FIG. 4A, a bottom plate 27 is arranged on the side opposite to the side where the flat surface 25 is provided in the base 21, and the opening 23 of the base 21 is closed from one side. In this state, the exhaust system 33 for exhausting the gas in the opening 23 is attached to the bottom plate 27, for example.

  Next, as shown in FIG. 4B, in a state where the opening 23 of the pedestal 21 is closed, the formation surface of the imaging region 4 (that is, the formation surface of the photoelectric conversion portion) in the element chip 2 is directed upward and is on the flat surface 25 of the pedestal 21. The element chip 2 is placed. An adhesive 35 made of, for example, a thermosetting resin or a photocurable resin is disposed on the mounting surface side of the element chip 2 on the base 21. As shown in the figure, the adhesive 35 may be disposed on the entire surface of the element chip 2 on the mounting surface side of the pedestal 21 or only on the periphery of the element chip 2 corresponding to the flat surface 25 of the pedestal 21. May be. However, it is important that the adhesive 35 is sandwiched between the flat surface 25 of the pedestal 21 and the element chip 2 on the entire circumference surrounding the opening 23.

  At this time, the imaging region 4 is placed in the range of the opening 23, and the periphery of the imaging region 4 is supported by the flat surface 25 of the pedestal 21 through the adhesive 35. Further, in this state, the peripheral circuits 5 to 8 arranged around the imaging region 4 are arranged corresponding to the flat surface 25 and a part thereof may be arranged within the range of the opening 23 as described above. This is the same as in the first embodiment.

  In this state, the element chip 2 is fixed on the flat surface 25 of the pedestal 21 by an adhesive 35 sandwiched between the flat surface 25 of the pedestal 21 and the element chip 2. At this time, it is important to fix the entire periphery of the periphery of the element chip 2 to the flat surface 25. For example, when a thermosetting resin is used as the adhesive 35, the fixing is performed by curing the adhesive 35 by heat treatment. As an example, when an epoxy resin is used, heat treatment is performed at 160 ° C. for about 15 minutes. On the other hand, when a photocurable resin is used as the adhesive 35, the fixing is performed by curing the adhesive 35 by light irradiation with a wavelength that transmits the element chip 2. As an example, if the element chip 2 is made of single crystal silicon, light irradiation using long wavelength light with a wavelength of about 700 nm or more is performed. As described above, the opening 23 of the base 21 is sealed by the element chip 2 and the bottom plate 27.

  Next, as shown in FIG. 4C, the gas in the opening 23 of the sealed pedestal 21 is exhausted using the exhaust system 33. As a result, the central portion of the element chip 2 disposed corresponding to the opening 23 of the pedestal 21 is pulled toward the inside of the opening 23 and shaped as the curved portion 11 curved in three dimensions. The curved shape of the curved portion 11 is a shape that follows the inner wall shape of the opening 23 on the flat surface 25 side of the pedestal 21. Then, like the planar shape of the opening 23 of the pedestal 21, for example, it is shaped into a shape having a circular bottom. Further, if the shape of the opening 23 is a shape in which four corners of a square are curved, a three-dimensional curve having a circular bottom at a portion close to the top of the bending portion 11 is formed. At this time, by fixing the entire periphery of the periphery of the element chip 2 to the flat surface 25, the stress due to the exhaust in the opening 23 can be evenly applied to the central portion of the element chip 2 corresponding to the opening 23. . Thereby, the curved part 11 curved in three dimensions can be formed without generating "wrinkles". For this reason, it is important that the entire circumference of the periphery of the element chip 2 is sufficiently fixed to the flat surface 25 by adjusting the width w1 of the opening 23 with respect to the outer shape of the element chip 2. This is the same as in the first embodiment. Such an effect is more certain if the opening 23 is circular.

  The inner wall of the opening 23 of the pedestal 21 has a tapered shape, and the edge portion of the opening 23 has a convex curved surface, so that the force during bending is concentrated on the element chip 2 portion corresponding to the edge of the opening 23. As in the first embodiment, the element chip 2 can be prevented from cracking at this portion.

  Further, in the element chip 2, the peripheral portion of the bending portion 11 is fixed to the flat surface 25 of the pedestal 21 and is not bent, and remains as the flat portion 13. The flat portion 13 is also left over the entire circumference of the bending portion 11 as in the first embodiment.

  Similar to the first embodiment, the bending portion 11 formed on the element chip 2 has a curvature that matches the curvature of field of an optical system such as a lens used in combination with the element chip 2. The shape of the curved portion 11 is controlled mainly by the shape of the inner wall of the opening 23 on the flat surface 25 side. The curvature of the curved portion 11 is adjusted by the shape of the inner wall of the opening 23 on the flat surface 25 side and the pressure in the opening 23. If it is desired to increase the curvature of the bending portion 11, the pressure difference inside and outside the opening 23 may be increased via the element chip 2. As another method for reducing the pressure in the opening 23, there is a method using a vacuum chamber without providing the exhaust system 33. In this case, the element chip 2 is placed on the pedestal 21 in the vacuum chamber, and the inside of the opening 23 of the pedestal 21 is reduced by reducing the pressure in the vacuum chamber. Then, the element chip 2 is bonded to make the inside of the opening 23 sealed. Thereafter, the pedestal 21 and the element chip 2 are released into the atmosphere, so that the element chip 2 is bent toward the opening 23 of the pedestal 21. Note that the thickness of the element chip 2 may be adjusted in order to bend the element chip 2 in a three-dimensional manner having a desired curvature without difficulty, as in the first embodiment.

  As described above, the solid-state imaging device 1-2 having the curved portion 11 is formed. After forming the solid-state imaging device 1-2, the pedestal 21 may be thinned from the back side as necessary. Further, in order to stabilize the shape of the curved portion 11, the opening 23 may be filled with resin after the bottom plate 27 is removed and cured. On the other hand, the element chip 2 may be peeled from the pedestal 21 if the shape of the curved portion 11 can be maintained. In order to facilitate such peeling of the element chip 2, a release agent may be applied to the back surface of the element chip 2 (the surface facing the pedestal 21) before placing the element chip 2 on the pedestal 21. good.

[Solid-State Image Sensor of Second Embodiment]
The solid-state imaging device 1-2 obtained by the above-described procedure has a space in the opening 23 of the base 21 in the solid-state imaging device of the first embodiment. Further, in the solid-state imaging device 1-2 formed by exhausting or depressurizing the inside of the opening 23 and leaving the bottom plate 27 as a package in the manufacturing process, the space in the opening 23 is maintained in a decompressed atmosphere. However, when the resin is filled in the opening 23 of the pedestal 21, the inside of the opening 23 is filled with the resin as in the solid-state imaging device of the first embodiment.

[Effects of Second Embodiment]
According to the second embodiment as described above, as in the first embodiment, in the pedestal 21, the periphery of the element chip 2 is fixed to the flat surface 25 around the opening 23 and the opening 23 is blocked. Only the central part of the arranged element chip 2 is curved in three dimensions. The peripheral portion of the element chip 2 that continues from the peripheral end of the bending portion 11 formed by the bending is left as the flat portion 13 that is fixed to the flat surface 25 of the base 21. Therefore, it is possible to leave the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied.

  The curvature of the curved portion 11 can be adjusted by the inner wall shape of the opening 23 on the flat surface 25 side of the base 21 and the pressure difference between the inside and outside of the opening 23 through the element chip 2. For this reason, it is possible to control the curvature of the bending part 11 in a wide range with high accuracy.

  As described above, according to the second embodiment, it is possible to form the three-dimensional curved portion 11 only at the central portion while leaving the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied. . For this reason, it becomes possible to manufacture the solid-state imaging device 1-2 including the three-dimensional curved portion 11 without causing damage such as cracks. As a result, similar to the first embodiment, it is possible to improve the reliability of the solid-state imaging device 1-2 including the three-dimensional curved portion 11.

<< 4. Third Embodiment (Example Using Pedestal as Package) >>
[Configuration of Pedestal Used for Manufacturing Method of Third Embodiment]
FIG. 5 is a cross-sectional view and a plan view of a pedestal used in the manufacturing method of the third embodiment. The pedestal 21a shown in this figure is different from the pedestal used in the manufacturing method of the first embodiment and the second embodiment in that the pedestal 21a functions as a package, and the pedestal electrode 43 is provided on the flat surface 25. It is in place.

  In other words, the pedestal 21 a has a configuration in which the pedestal 21 used in the manufacturing methods of the first and second embodiments is the pedestal main body 21 and the pedestal side electrode 43 is disposed on the flat surface 25. The pedestal side electrode 43 is disposed corresponding to a chip side electrode provided in an element chip to be described below, and is disposed in a state of being embedded in the flat surface 25. That is, the surface of the pedestal side electrode 43 constitutes a part of the flat surface 25. Such a pedestal side electrode 43 is pulled out from the flat surface 25 of the pedestal 21a and further connected to an external member. The pedestal side electrode 43 may be provided on the inner wall of the opening 13 on the flat surface 25 side.

  If the pedestal main body 21 is configured using a conductive material, the flat surface 25 side of the pedestal main body 21 is configured by an insulating film, and the pedestal side electrode 43 is embedded in the insulating film. It is assumed that each pedestal side electrode 43 is kept insulative.

  An exhaust system 33 capable of exhausting the inside of the opening 23 is attached to the base 21a. The exhaust system 33 may be configured to exhaust the gas in the opening 23 from the bottom plate 27 side that closes the opening 23 of the base 21 from one side, for example. Further, a hole for exhaust may be provided between the base 21 or the base 21 and the bottom plate 27, and the gas in the opening 23 may be exhausted from the hole.

[Manufacturing Method of Third Embodiment]
FIG. 6 is a cross-sectional process diagram illustrating a method for manufacturing the solid-state imaging device of the third embodiment. The manufacturing method of the third embodiment shown in FIG. 6 is a method of manufacturing a solid-state imaging device using the pedestal 21a having the above configuration, and the manufacturing method will be described below with reference to this drawing.

  First, as shown in FIG. 6A, the bottom plate 27 is arranged on the side opposite to the side where the flat surface 25 is provided in the base 21a, and the opening 23 of the base 21a is closed from one side.

  Next, the element chip 2a is placed on the pedestal 21a. The element chip 2a used here includes a chip-side electrode 15 on the back side opposite to the surface on which the imaging region 4 and the peripheral circuits 5 to 8 are provided. These chip side electrodes 15 are drawn from the imaging region 4 and the peripheral circuits 5 to 8, and are arranged at positions corresponding to the pedestal side electrode 43, for example, at a peripheral portion of the element chip 2 a.

  Further, an anisotropic conductive adhesive 45 is disposed on the arrangement surface side of the chip side electrode 15 in such an element chip 2a. The anisotropic conductive adhesive 45 has a configuration in which conductive fine particles are dispersed in, for example, a thermosetting resin or a photocurable resin. As illustrated, the anisotropic conductive adhesive 45 may be disposed on the entire surface of the chip-side electrode 15 on the element chip 2a, or the peripheral edge of the element chip 2a corresponding to the flat surface 25 of the base 21a. You may arrange only. However, it is important that the anisotropic conductive adhesive 45 is sandwiched between the flat surface 25 of the base 21a and the element chip 2a on the entire circumference surrounding the opening 23.

  The element chip 2a as described above is on the flat surface 25 of the pedestal 21a with the formation surface of the imaging region 4 (that is, the formation surface of the photoelectric conversion unit) facing upward in the element chip 2a in a state of closing the opening 23 of the pedestal 21a. Placed on. Thus, the anisotropic conductive adhesive 45 is sandwiched between the flat surface 25 of the base 21a and the element chip 2a.

  At this time, the chip-side electrode 15 provided on the element chip 2a and the pedestal-side electrode 43 provided on the flat surface 25 of the pedestal 21a are arranged to face the pedestal 21a at an element chip of 1: 1. Align 2a. Further, the imaging region 4 of the element chip 2 a is placed in the range of the opening 23 of the pedestal 21 a, and the peripheral portion of the imaging region 4 is supported by the flat surface 25 of the pedestal 21 a through the anisotropic conductive adhesive 45. Further, in this state, the peripheral circuits 5 to 8 arranged around the imaging region 4 are arranged on the flat surface 25 and a part thereof may be arranged within the range of the opening 23. It is the same.

  In this state, as shown in FIG. 6B, the element chip 2a is fixed on the flat surface 25 of the pedestal 21a by the anisotropic conductive adhesive 45 sandwiched between the flat surface 25 of the pedestal 21a and the element chip 2a. To do. At this time, it is important to fix the entire periphery of the periphery of the element chip 2 a to the flat surface 25. For example, when a thermosetting resin is used as the anisotropic conductive adhesive 45, the fixing is performed by curing the thermosetting resin by heat treatment. As an example, when an epoxy resin is used, heat treatment is performed at 160 ° C. for about 15 minutes. On the other hand, when a photocurable resin is used as the anisotropic conductive adhesive 45, the photocurable resin is cured by irradiation with light having a wavelength that transmits the element chip 2a, and the fixing is performed. As an example, if the element chip 2a is made of single crystal silicon, light irradiation using light having a long wavelength of about 700 nm or longer is performed. As described above, the opening 23 of the base 21a is sealed by the element chip 2a and the bottom plate 27. Further, the base side electrode 43 and the chip side electrode 15 are connected by the anisotropic conductive adhesive 45.

  Next, as shown in FIG. 6C, the gas in the opening 23 of the sealed pedestal 21 a is exhausted using the exhaust system 33. As a result, the central portion of the element chip 2a disposed corresponding to the opening 23 of the pedestal 21a is pulled toward the inside of the opening 23 and shaped as the curved portion 11 curved in three dimensions. The curved shape of the curved portion 11 is a shape that follows the inner wall shape of the opening 23 on the flat surface 25 side of the pedestal 21a. Then, similarly to the planar shape of the opening 23 of the pedestal 21a, for example, it is shaped into a shape having a circular bottom. Further, if the shape of the opening 23 is a shape in which four corners of a square are curved, a three-dimensional curve having a circular bottom at a portion close to the top of the bending portion 11 is formed. At this time, by fixing the entire periphery of the periphery of the element chip 2 a to the flat surface 25, stress due to the exhaust in the opening 23 can be evenly applied to the central portion of the element chip 2 a corresponding to the opening 23. . Thereby, the curved part 11 curved in three dimensions can be formed without generating "wrinkles". For this reason, it is important that the entire circumference of the periphery of the element chip 2a is sufficiently fixed to the flat surface 25 by adjusting the width w1 of the opening 23 with respect to the outer shape of the element chip 2a. This is the same as the embodiment. Such an effect is more certain if the opening 23 is circular.

  The inner wall of the opening 23 of the pedestal 21a is tapered, and the edge portion of the opening 23 is a convex curved surface, so that the bending force is concentrated on the element chip 2a corresponding to the edge of the opening 23. It is possible to prevent the cracking of the element chip 2a at this portion, as in the other embodiments.

  Further, in the element chip 2a, the peripheral portion of the bending portion 11 is fixed to the flat surface 25 of the pedestal 21a and is not bent, and remains as the flat portion 13. The flat portion 13 is left over the entire circumference of the curved portion 11 as in the other embodiments.

  The curved portion 11 formed in the element chip 2a has a curvature matching the curvature of field of an optical system such as a lens used in combination with the element chip 2a, as in the other embodiments. Such adjustment of the curvature is the same as in the second embodiment, and is mainly adjusted by the shape of the inner wall of the opening 23 on the flat surface 25 side and the pressure in the opening 23. If it is desired to increase the curvature of the bending portion 11, the pressure difference inside and outside the opening 23 may be increased via the element chip 2a. Further, the thickness of the element chip 2a may be adjusted in order to bend the element chip 2a in a three-dimensional manner having a desired curvature without difficulty. As another method of curving the element chip 2a by reducing the volume of the opening 23 and contracting the volume, a method of releasing the atmosphere after the base 21 and the element chip 2a are bonded together in a reduced pressure state may be applied. This is the same as in the second embodiment. Further, the thickness of the element chip 2a may be adjusted in order to bend the element chip 2a in a three-dimensional manner having a desired curvature without difficulty.

  As described above, the solid-state imaging device 1-3 having the curved portion 11 is formed. After the formation of the solid-state image sensor 1-3, the pedestal 21a may be thinned from the back side as necessary. Further, in order to stabilize the shape of the curved portion 11, the opening 23 may be filled with resin after the bottom plate 27 is removed and cured.

[Solid-State Image Sensor of Third Embodiment]
The solid-state imaging device 1-3 obtained by the above procedure is obtained by bonding the above-described pedestal 21a as a package to the convex curved surface side of the bending portion 11 in the element chip 2a. The element chip 2a is obtained by providing a chip-side electrode 15 with respect to the element chip (2) of the solid-state imaging element (1-1) of the first embodiment. The chip-side electrode 15 is disposed on the back side opposite to the surface on which the imaging region 4 and the peripheral circuits 5 to 8 are provided in the flat portion 13, and is 1 with respect to the pedestal-side electrode 43 disposed on the pedestal 21 a serving as a package. : 1 is connected. The chip-side electrode 15 and the pedestal-side electrode 43 are connected by an anisotropic conductive adhesive 45 sandwiched between the flat surface 25 of the pedestal 21a and the element chip 2a. Further, in the solid-state imaging device 1-3 formed by exhausting or depressurizing the inside of the opening 23 and leaving the bottom plate 27 as a package in the manufacturing process, the space in the opening 23 is maintained in a decompressed atmosphere.

[Effect of the third embodiment]
Even in the third embodiment as described above, as in the other embodiments, in the pedestal 21a, the opening 23 is closed with the peripheral edge of the element chip 2a fixed to the flat surface 25 around the opening 23. Only the central part of the element chip 2a arranged in (3) is curved three-dimensionally. The peripheral edge portion of the element chip 2a that continues from the peripheral edge of the bending portion 11 formed by this bending is left as a flat portion 13 fixed to the flat surface 25 of the base 21a. Therefore, it is possible to leave the peripheral portion of the element chip 2a as the flat portion 13 to which no stress due to bending is applied.

  Further, the curvature of the bending portion 11 can be adjusted by the pressure difference between the inside and outside of the opening 23 via the element chip 2a. For this reason, it is possible to control the curvature of the bending part 11 in a wide range with high accuracy.

  As described above, according to the third embodiment, it is possible to leave only the central portion as the three-dimensional curved portion 11 while leaving the peripheral portion of the element chip 2a as the flat portion 13 to which stress due to bending is not applied. . For this reason, it is possible to manufacture the solid-state imaging device 1-3 including the three-dimensional curved portion 11 without causing damage such as cracks. As a result, as in the other embodiments, it is possible to improve the reliability of the solid-state imaging device 1-3 including the three-dimensional curved portion 11.

  Furthermore, according to the third embodiment, by using the base 21a as a package, it is possible to reduce the process of assembling the element chip 2a and the package with the base-side electrode 43 as an external terminal. Further, a terminal drawn from the peripheral circuits 5 to 8 can be provided on the surface side of the flat portion 13 of the element chip 2a on which the imaging region 4 is arranged, and connection to an external circuit can be achieved using this terminal. At this time, since the terminals are provided on the flat portion 13, good workability for connection to an external circuit such as bonding is ensured.

  The third embodiment can also be combined with the method for forming a curved portion by curing shrinkage of the resin described in the first embodiment. In this case, an anisotropic conductive adhesive having curing shrinkage is used as the resin used in the first embodiment.

≪5. Fourth Embodiment (Example of fixing an element chip to a pedestal by vacuum suction) >>
[Configuration of Pedestal Used for Manufacturing Method of Fourth Embodiment]
FIG. 7 is a sectional view and a plan view of a pedestal used in the manufacturing method of the fourth embodiment. The difference between the pedestal 21b shown in FIG. 7 and the pedestal used in the manufacturing method of the first and second embodiments is that the pedestal 21b includes an exhaust groove 51 for fixing the element chip. The other configurations are the same.

  That is, this pedestal 21 b has the pedestal 21 used in the manufacturing method of the first embodiment and the second embodiment as the pedestal main body 21, and has an exhaust groove 51 on the flat surface 25. The exhaust groove 51 is provided so as to surround the entire periphery of the opening 23 in the base 21b. An exhaust system 53 is connected to the exhaust groove 51 so that the gas in the exhaust groove 51 is exhausted.

[Manufacturing Method of Fourth Embodiment]
FIG. 8 is a cross-sectional process diagram illustrating a method for manufacturing the solid-state imaging device of the fourth embodiment. The manufacturing method of the fourth embodiment shown in FIG. 8 is a method of manufacturing a solid-state imaging device using the pedestal 21b having the above configuration, and the manufacturing method will be described below with reference to this drawing.

  First, as shown in FIG. 8A, the bottom plate 27 is disposed on the side opposite to the side where the flat surface 25 is provided in the base 21b, and the opening 23 of the base 21b is closed from one side.

  Next, in a state where the opening 23 of the pedestal 21b is closed, the element chip 2 is placed on the flat surface 25 of the pedestal 21b with the imaging surface 4 formation surface (that is, the photoelectric conversion portion formation surface) of the element chip 2 facing upward. To do. At this time, the imaging region 4 is placed within the range of the opening 23, and the peripheral portion of the imaging region 4 is supported by the flat surface 25 of the base 21b. Further, the entire surface of the exhaust groove 51 provided on the flat surface 25 of the base 21 b is closed by the element chip 2. Further, in this state, the peripheral circuits 5 to 8 arranged around the imaging region 4 are arranged on the flat surface 25 and a part thereof may be arranged within the range of the opening 23. It is the same as the form.

  In this state, the gas in the exhaust groove 51 is exhausted by the exhaust system 53, the pressure in the exhaust groove 51 is reduced, and the element chip 2 is fixed to the flat surface 25 of the base 21b by vacuum suction. At this time, it is important to fix the entire periphery of the periphery of the element chip 2 to the flat surface 25. Thereby, the opening 23 of the base 21 b is sealed by the element chip 2 and the bottom plate 27.

  Next, as shown in FIG. 8B, the gas in the opening 23 of the sealed pedestal 21 b is exhausted using the exhaust system 33 while the element chip 2 is fixed to the pedestal 21 b by vacuum suction. As a result, the central portion of the element chip 2 disposed corresponding to the opening 23 of the base 21b is pulled toward the inside of the opening 23 and shaped as the curved portion 11 curved in three dimensions. The curved shape of the curved portion 11 is a shape that follows the inner wall shape of the opening 23 on the flat surface 25 side of the base 21b. Then, similarly to the planar shape of the opening 23 of the pedestal 21b, for example, it is shaped into a shape having a circular bottom. Further, if the shape of the opening 23 is a shape in which four corners of a square are curved, a three-dimensional curve having a circular bottom at a portion close to the top of the bending portion 11 is formed. At this time, by fixing the entire periphery of the periphery of the element chip 2 to the flat surface 25, the stress due to the exhaust in the opening 23 can be evenly applied to the central portion of the element chip 2 corresponding to the opening 23. . Thereby, the curved part 11 curved in three dimensions can be formed without generating "wrinkles". For this reason, it is important that the entire circumference of the periphery of the element chip 2 is sufficiently fixed to the flat surface 25 by adjusting the width w1 of the opening 23 with respect to the outer shape of the element chip 2. This is the same as the embodiment. Such an effect is more certain if the opening 23 is circular.

  The inner wall of the opening 23 of the pedestal 21b is tapered, and the edge portion of the opening 23 is a convex curved surface, so that the bending force is concentrated on the element chip 2 corresponding to the edge of the opening 23. As in the other embodiments, it is possible to prevent the element chip 2 from being cracked at this portion.

  Further, in the element chip 2, the peripheral portion of the bending portion 11 is fixed to the flat surface 25 of the pedestal 21 b and is not bent, and remains as the flat portion 13. The flat portion 13 is left over the entire circumference of the curved portion 11 as in the other embodiments.

  The curved portion 11 formed on the element chip 2 has a curvature matching the curvature of field of an optical system such as a lens used in combination with the element chip 2 as in the other embodiments. Such a curvature adjustment is the same as in the second and third embodiments, and is mainly adjusted by the inner wall shape of the opening 23 on the flat surface 25 side and the pressure in the opening 23. If it is desired to increase the curvature of the bending portion 11, the pressure difference inside and outside the opening 23 may be increased via the element chip 2. Further, the thickness of the element chip 2 may be adjusted in order to bend the element chip 2 in a three-dimensional manner having a desired curvature without difficulty, as in the other embodiments. As another method of curving the element chip 2 by reducing the volume in the opening 23 and shrinking the volume, a method of releasing the atmosphere after the base 21b and the element chip 2 are bonded together in a reduced pressure state may be applied. This is the same as in the second and third embodiments. Further, the thickness of the element chip 2 may be adjusted in order to bend the element chip 2 in a three-dimensional manner having a desired curvature without difficulty.

  As described above, the solid-state imaging device 1-4 having the curved portion 11 is formed. After the formation of the solid-state imaging device 1-4, in order to further stabilize the shape of the bending portion 11, the bottom plate 27 is removed while the element chip 2 is vacuum-adsorbed on the base 21b, and the opening 23 is filled with resin. The base 21b and the element chip 2 may be integrated by curing. In this case, after the base 21b and the element chip 2 are integrated, the base 21b may be thinned from the back side. On the other hand, if the shape of the curved portion 11 can be maintained, it is not necessary to integrate the element chip 2 and the base 21b, and the element chip 2 may be removed from the base 21b and used as a solid-state imaging element.

[Solid-State Image Sensor of Fourth Embodiment]
The solid-state imaging device 1-4 obtained by the above procedure is configured as a curved portion 11 in which the central portion of the element chip 2 is curved in three dimensions. Moreover, the flat part 13 extended from the peripheral part of this curved part 11 is provided. The flat portion 13 is disposed on the entire circumference of the bending portion 11 and constitutes the same surface.

  An imaging region 4 in which photoelectric conversion units are arranged is disposed on the concave curved surface side of the curved portion 11. Such a bending portion 11 has such a curvature that the photoelectric conversion portion is arranged along the curvature of field in accordance with the curvature of field of an optical system such as a lens used in combination with the solid-state imaging device 1-4. Suppose that there is. For this reason, it is preferable that the bottom surface of the bending part 11 is circular.

  The flat portion 13 is provided with peripheral circuits 5 to 8 arranged around the imaging region 4. A part of the peripheral circuits 5 to 8 may be arranged in the bending portion 11. The flat portion 13 is provided with terminals drawn from the peripheral circuits 5 to 8 and can be connected to an external circuit by using the terminals. At this time, since the terminals are provided on the flat portion 13, good workability for connection to an external circuit such as bonding is ensured as in the other embodiments.

  Further, the solid-state imaging device 1-4 has a configuration in which the element chip 2 is supported from the convex curved surface side of the bending portion 11 by the pedestal 21b and the opening 23 of the pedestal 21b is filled with resin. In this case, the shape of the bending portion 11 is secured by the resin filled in the opening 23.

[Effect of Fourth Embodiment]
Even in the fourth embodiment as described above, similarly to the other embodiments, in the pedestal 21b, the opening 23 is blocked in a state where the periphery of the element chip 2 is fixed to the flat surface 25 around the opening 23. Only the central part of the element chip 2 arranged in (3) is curved three-dimensionally. A peripheral edge portion continuous from the peripheral end of the bending portion 11 formed by this bending is left as the flat portion 13 fixed to the flat surface 25 of the pedestal 21b. Therefore, it is possible to leave the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied.

  The curvature of the bending portion 11 can be adjusted by the pressure difference inside and outside the opening 23 through the element chip 2. For this reason, it is possible to control the curvature of the bending part 11 in a wide range with high accuracy.

  As described above, according to the fourth embodiment, it is possible to form only the central portion as the three-dimensional curved portion 11 while leaving the peripheral portion of the element chip 2 as the flat portion 13 to which no stress due to bending is applied. . For this reason, it becomes possible to manufacture the solid-state imaging device 1-4 including the three-dimensional curved portion 11 without causing damage such as cracks. As a result, as in other embodiments, it is possible to improve the reliability of the solid-state imaging device 1-4 including the three-dimensional curved portion 11.

≪6. Fifth Embodiment (Example of controlling the shape of the bending portion by the shape of the base) >>
[Configuration of Pedestal Used for Manufacturing Method of Fifth Embodiment]
FIG. 9 is a cross-sectional view and a plan view of a pedestal used in the manufacturing method of the fifth embodiment. The base 21c shown in FIG. 9 is different from the base used in the manufacturing method of the other embodiment in the shape of the opening of the base 21c, and other configurations are the same.

  That is, the pedestal 21c is a curved concave portion 55 whose inner wall is formed as a concave curved surface that is curved in three dimensions. One surface of the pedestal 21 c provided with the curved recess 55 is shaped as a flat surface 25 around the curved recess 55. And it is especially preferable that the edge part which makes the boundary from the curved recessed part 55 to the flat surface 25 is comprised as a convex curved surface.

  The curved concave portion 55 has a shape that matches the curvature of field (lens aberration) of an optical system in which a lens used in combination with the solid-state imaging device manufactured here and a plurality of lenses are combined. The curvature of such a curved recess 55 is, for example, about 10% to 20%, for example, about 17%. Further, the angle θ formed by the concave curved surface of the curved concave portion 55 and the extended surface of the flat surface 25 is less than θ = 90 °, and is preferably about θ = 45 ° as an example. Further, it is assumed that the opening width w1 of the curved recess 55 is such that the imaging region (4) of the element chip (2) described with reference to FIG.

  The curved recess 55 is provided with an exhaust port 57 of an exhaust system that can exhaust the inside of the curved recess 55. The exhaust port 57 is provided at the center of the curved recess 55, for example. The arrangement of the exhaust port 57 is not limited to this, and the arrangement state of the exhaust port 57 in the curved recess 55 so that the element chip (2) described below can be bent along the curved recess 55. It is important to set

  For this reason, for example, as shown in FIG. 10A, a plurality of exhaust ports 57 connected to the exhaust system may be distributed throughout the curved concave portion 55. 10B, an exhaust port 57 connected to the exhaust system may be provided in the center of the curved recess 55, and an exhaust groove 59 communicating with the exhaust port 57 may be disposed on the entire curved recess 55. .

  The flat surface 25 is provided over the entire circumference of the curved recess 55 as described above. As in the other embodiments, the flat surface 25 is arranged so that at least the imaging region (4) of the element chip (2) described with reference to FIG. 1 is within the range of the curved recess 55 serving as an opening. It has a width w2 that supports the periphery of the element chip (2). The entire circumference or a part of the outer periphery of the flat surface 25 may be configured as a surface higher than the flat surface 25 in order to facilitate alignment when the element chip (2) is placed. When such alignment is not necessary, the entire surface of one surface of the pedestal 21c may be a flat surface 25 having the same height.

  On such a flat surface, for example, an exhaust groove 51 similar to the base (21b) described in the previous fourth embodiment is provided. The exhaust groove 51 is provided so as to surround the entire circumference of the curved recess 55 in the pedestal 21c. An exhaust system 53 is connected to the exhaust groove 51 so that the gas in the exhaust groove 51 is exhausted.

  The pedestal 21c is not particularly limited in the constituent material as in the other embodiments.

[Manufacturing Method of Fifth Embodiment]
FIG. 11 is a cross-sectional process diagram illustrating a method for manufacturing the solid-state imaging device of the fifth embodiment. The manufacturing method of the fifth embodiment shown in FIG. 11 is a manufacturing method of a solid-state imaging device using the pedestal 21c having the above-described configuration, and the manufacturing method will be described below based on this drawing.

  First, as shown in FIG. 11A, with the curved concave portion 55 of the pedestal 21c closed, the imaging region 4 formation surface (that is, the photoelectric conversion portion formation surface) of the element chip 2 faces upward and the flat surface 25 of the pedestal 21c. The element chip 2 is placed on the substrate. An adhesive 35 made of, for example, a thermosetting resin or a photocurable resin is disposed on the mounting surface side of the element chip 2 on the base 21c. As shown in the figure, the adhesive 35 is disposed on the entire surface of the element chip 2 on the mounting surface side on the base 21c.

  At this time, the imaging region 4 is placed in the range of the curved recess 55, and the periphery of the imaging region 4 is supported by the flat surface 25 of the pedestal 21c through the adhesive 35 over the entire surface. Further, in this state, the peripheral circuits 5 to 8 arranged around the imaging region 4 are arranged corresponding to the flat surface 25, and a part thereof may be arranged within the curved recess 55. This is the same as the first embodiment.

  In this state, the gas in the exhaust groove 51 is exhausted by the exhaust system 53, the pressure in the exhaust groove 51 is reduced, and the element chip 2 is fixed to the flat surface 25 of the base 21c by vacuum suction. At this time, it is important to fix the entire periphery of the periphery of the element chip 2 to the flat surface 25. Thereby, the curved recessed part 55 of the base 21c is sealed.

  Next, as shown in FIG. 11B, the gas in the curved concave portion 55 of the sealed base 21 c is exhausted from the exhaust port 57 while maintaining the element chip 2 fixed to the base 21 c by vacuum suction. As a result, the central portion of the element chip 2 disposed corresponding to the curved concave portion 55 of the base 21c is pulled toward the inside of the curved concave portion 55 and shaped as the curved portion 11 curved in three dimensions. The curved portion 11 has a curved shape along the shape of the curved concave portion 55 of the pedestal 21c. At this time, by fixing the entire periphery of the periphery of the element chip 2 to the flat surface 25, stress due to the exhaust in the curved recess 55 is uniformly applied to the central portion of the element chip 2 corresponding to the curved recess 55. Can do. Thereby, the curved part 11 curved in three dimensions can be formed without generating "wrinkles". For this reason, it is important that the entire circumference of the periphery of the element chip 2 is sufficiently fixed to the flat surface 25 by adjusting the width w1 of the curved recess 55 with respect to the outer shape of the element chip 2. It is the same as that of other embodiment.

  The edge portion that forms the boundary between the curved concave portion 55 and the flat surface 25 of the pedestal 21c is a convex curved surface, so that it is possible to prevent the force during bending from concentrating on the element chip 2 portion corresponding to the edge portion. As in the other embodiments, it is possible to prevent the element chip 2 from cracking at this portion.

  In the element chip 2, the peripheral portion of the bending portion 11 is fixed to the flat surface 25 of the pedestal 21 c so as not to be bent and remains as the flat portion 13. The flat portion 13 is left over the entire circumference of the curved portion 11 as in the other embodiments.

  The curved portion 11 formed on the element chip 2 has a curvature matching the curvature of field of an optical system such as a lens used in combination with the element chip 2 as in the other embodiments. Such curvature adjustment is controlled by the shape of the inner wall of the curved recess 55. Further, the thickness of the element chip 2 may be adjusted in order to bend the element chip 2 in a three-dimensional manner having a desired curvature without difficulty, as in the other embodiments. As another method of bending the element chip 2 by reducing the volume between the curved recess 55 and the element chip 2 to shrink the volume, the base 21c and the element chip 21 are bonded together in a reduced pressure state and then released into the atmosphere. The method may be applied as in the second to fourth embodiments.

  After that, as shown in FIG. 11C, the element chip 2 is fixed to the pedestal 21 c by the adhesive 35 sandwiched between the flat surface 25 and the curved recess 55 of the pedestal 21 c and the element chip 2. At this time, for example, when a thermosetting resin is used as the adhesive 35, the adhesive 35 is cured by heat treatment and the fixing is performed. As an example, when an epoxy resin is used, heat treatment is performed at 160 ° C. for about 15 minutes. On the other hand, when a photocurable resin is used as the adhesive 35, the fixing is performed by curing the adhesive 35 by light irradiation with a wavelength that transmits the element chip 2. As an example, if the element chip 2 is made of single crystal silicon, light irradiation using long wavelength light with a wavelength of about 700 nm or more is performed.

  As described above, the solid-state imaging device 1-5 having the curved portion 11 is formed. After the solid-state imaging device 1-5 is formed, the pedestal 21c may be thinned from the back side.

[Fifth Embodiment Solid-State Image Sensor]
As shown in FIG. 1, the solid-state imaging device 1-5 obtained by the above procedure is configured as a curved portion 11 in which the central portion of the device chip 2 is curved in three dimensions. Moreover, the flat part 13 extended from the peripheral part of this curved part 11 is provided. The flat portion 13 is disposed on the entire circumference of the bending portion 11 and constitutes the same surface.

  An imaging region 4 in which photoelectric conversion units are arranged is disposed on the concave curved surface side of the curved portion 11. Such a bending portion 11 has such a curvature that the photoelectric conversion portion is arranged along the curvature of field in accordance with the curvature of field of an optical system such as a lens used in combination with the solid-state imaging device 1-5. Suppose that there is. For this reason, it is preferable that the bottom surface of the bending part 11 is circular.

  The flat portion 13 is provided with peripheral circuits 5 to 8 arranged around the imaging region 4. A part of the peripheral circuits 5 to 8 may be arranged in the bending portion 11. The flat portion 13 is provided with terminals drawn from the peripheral circuits 5 to 8 and can be connected to an external circuit by using the terminals. At this time, since the terminals are provided on the flat portion 13, good workability for connection to an external circuit such as bonding is ensured as in the other embodiments.

  Further, in the solid-state imaging device 1-5, the element chip 2 is supported from the convex curved surface side of the curved portion 11 by the base 21c having the curved concave portion 55, and the shape of the curved portion 11 is secured by the curved concave portion 55. .

[Effect of Fifth Embodiment]
In the fifth embodiment as described above, in the pedestal 21c, the element chip 2 disposed corresponding to the curved recess 55 is fixed in a state where the periphery of the element chip 2 is fixed to the flat surface 25 around the curved recess 55. Only the central part is curved in three dimensions. A peripheral edge portion continuous from the peripheral end of the bending portion 11 formed by this bending is left as the flat portion 13 fixed to the flat surface 25 of the base 21c. Therefore, similarly to the other embodiments, the peripheral portion of the element chip 2 can be left as the flat portion 13 to which no stress due to bending is applied.

  Moreover, the curvature of the curved part 11 can be adjusted with the shape of the curved recessed part 55 formed in the base 21c. For this reason, it is possible to control the curvature of the bending part 11 in a wide range with high accuracy.

  As described above, according to the fifth embodiment, it is possible to leave the peripheral portion of the element chip 2 as the flat portion 13 to which stress due to bending is not applied and to form only the central portion as the three-dimensional curved portion 11. . Therefore, it is possible to manufacture the solid-state imaging device 1-5 including the three-dimensional curved portion 11 without causing damage such as cracks. As a result, as in other embodiments, it is possible to improve the reliability of the solid-state imaging device 1-5 including the three-dimensional curved portion 11.

  In addition, this 5th Embodiment can also be combined with the method of using the base demonstrated in 3rd Embodiment as a package. In this case, a pedestal side electrode is formed on the pedestal 21c used in the fifth embodiment, a chip side electrode is formed on the surface of the element chip 2 opposite to the imaging region 4, and an anisotropic conductive material is used as the adhesive 35. Adhesive will be used.

  In the first to fifth embodiments described above, the element chip having the MOS type solid-state imaging element is applied. However, the present disclosure can be applied to an element chip having a CCD type solid-state imaging element. Both the MOS type solid-state imaging device and the CCD type solid-state imaging device can be applied to the back side illumination type or the front side illumination type. In the embodiment of the present disclosure, when an imaging chip having a back-illuminated MOS solid-state imaging device is used, it is preferable that a light receiving area can be increased and sensitivity can be further improved.

≪7. Sixth Embodiment (Embodiment of Electronic Device) >>
The solid-state imaging device according to the present disclosure described in each of the embodiments described above is an electronic device such as a camera system such as a digital camera or a video camera, a mobile phone having an imaging function, or another device having an imaging function. Can be applied to.

  FIG. 12 is a configuration diagram of a camera using a solid-state image sensor as an example of the electronic apparatus according to the present disclosure. The camera according to the present embodiment is an example of a video camera capable of capturing still images or moving images. The camera 91 according to this embodiment includes a solid-state image sensor 1, an optical system 93 that guides incident light to a light receiving sensor unit of the solid-state image sensor 1, a shutter device 94, and a drive circuit 95 that drives the solid-state image sensor 1. And a signal processing circuit 96 that processes an output signal of the solid-state imaging device 1.

  The solid-state imaging device 1 is applied with the solid-state imaging device (1-1 to 1-5) including the three-dimensional curved portion described in the above-described embodiments. The optical system 93 may be an optical lens system including a plurality of optical lenses or a single optical lens. Here, since the solid-state imaging device (1-1 to 1-5) having a three-dimensional curved portion along the field curvature of the optical system 93 is used as the solid-state imaging device 1, an optical lens constituting the optical system 93 is used. May be a small number. Such an optical system 93 is disposed on the concave curved surface side of the curved portion of the element chip in which the imaging region is provided in the solid-state imaging device 1, and the curved portion of the element chip along the curvature of field of the optical system 93. A concave curved surface is arranged. As a result, image light (incident light) from the subject is imaged on the imaging surface (imaging region) of the solid-state imaging device 1 and signal charges are accumulated in the solid-state imaging device 1 for a certain period.

  The shutter device 94 controls the light irradiation period and the light shielding period to the solid-state imaging device 1. The drive circuit 95 supplies a drive signal for controlling the transfer operation of the solid-state imaging device 1 and the shutter operation of the shutter device 94. Signal transfer of the solid-state imaging device 1 is performed by a drive signal (timing signal) supplied from the drive circuit 95. The signal processing circuit 96 performs various signal processing. The video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.

  According to the electronic apparatus according to the present embodiment described above, as described in the first to fifth embodiments described above, the solid-state imaging device that includes the three-dimensional curved portion and does not generate cracks is used. Therefore, it is possible to improve the reliability of an electronic device using this solid-state imaging device.

In addition, this technique can also take the following structures.
(1)
Producing an element chip in which photoelectric conversion portions are arranged on one main surface side;
Providing a pedestal having an opening and shaped around the opening as a flat surface;
Placing the element chip on a flat surface of the pedestal in a state in which the opening of the pedestal is closed and the one main surface side on which the photoelectric conversion units are arranged is directed upward;
In a state where the element chip is fixed to the flat surface of the pedestal, the element chip is three-dimensionally curved toward the opening side by volume shrinking the inside of the opening of the pedestal closed by the element chip. A method for manufacturing a solid-state imaging device.

(2)
The solid-state imaging device manufacturing method according to (1), wherein the element chip is fixed to the flat surface of the pedestal over the entire circumference of the opening.

(3)
The method for manufacturing a solid-state imaging device according to (1) or (2), wherein the opening of the pedestal has a circular opening shape on the flat surface side.

(4)
On one main surface of the element chip, a peripheral circuit is provided around an imaging region in which the photoelectric conversion unit is provided,
In the step of placing the element chip on the flat surface of the pedestal, the imaging region is disposed within the range of the opening. (1) to (3).

(5)
Before placing the element chip on the flat surface of the pedestal, the opening is filled with uncured resin,
The method for manufacturing a solid-state imaging element according to any one of (1) to (4), wherein when the inside of the opening is volume contracted, the uncured resin filled in the opening is cured and contracted.

(6)
When the inside of the opening is contracted in volume, the gas in the opening is exhausted. (1) to (4).

(7)
The inner wall of the opening is formed as a concave curved surface that is curved in three dimensions,
The element chip bent in three dimensions toward the opening side is fixed to the concave curved surface with an adhesive sandwiched between the concave curved surface and the method of manufacturing a solid-state imaging device according to (6).

(8)
The method for manufacturing a solid-state imaging device according to any one of (1) to (7), wherein the opening of the pedestal has a shape in which an opening diameter increases toward a flat surface on which the element chip is placed.

(9)
The flat surface of the pedestal is provided with an exhaust groove communicating with the outside of the pedestal,
When the element chip is fixed on the flat surface of the pedestal, the element chip is vacuum-sucked to the flat surface of the pedestal by suction from the exhaust groove (1) to (8). Manufacturing method of solid-state image sensor.

(10)
In the element chip, a chip side electrode is disposed on a surface facing the pedestal,
A pedestal side electrode is disposed on the flat surface of the pedestal,
When fixing the element chip on the flat surface of the pedestal, the chip-side electrode and the pedestal side are held by sandwiching an anisotropic conductive adhesive between the flat surface of the pedestal and the element chip. The method for manufacturing a solid-state imaging device according to any one of (1) to (8), wherein the electrode is connected.

(11)
A pedestal having an opening and shaped around the opening as a flat surface;
An element chip having a curved portion in which the portion corresponding to the opening is curved in three dimensions toward the opening side, and a flat portion that is extended from the peripheral end of the curved portion and supported by the flat surface of the pedestal;
A solid-state imaging device comprising: a photoelectric conversion unit arranged on the concave curved surface side of the curved portion in the element chip.

(12)
The flat part in the said element chip is arrange | positioned at the perimeter of the curved part in the said element chip, and comprises the same surface. (11).

(13)
The solid-state imaging device according to (11) or (12), wherein a bottom surface of the curved portion is circular.

(14)
The solid-state imaging device according to any one of (11) to (13), wherein a peripheral circuit is disposed around an imaging region in which the photoelectric conversion units are arranged in the element chip.

(15)
The solid-state imaging device according to any one of (11) to (14), wherein an opening of the pedestal is filled with resin.

(16)
The solid-state imaging device according to any one of (11) to (15), wherein the opening of the pedestal has a shape in which an opening diameter increases toward a flat surface on which the element chip is placed.

(17)
The inner wall of the opening in the pedestal is formed as a concave curved surface that is curved in three dimensions,
The solid chip according to any one of (11) to (16), wherein the element chip bent in three dimensions toward the opening side is fixed to the concave curved surface by an adhesive sandwiched between the element chip and the concave curved surface. Image sensor.

(18)
In the element chip, a chip side electrode is disposed on a surface facing the pedestal,
A pedestal side electrode is disposed on the flat surface of the pedestal,
An anisotropic conductive adhesive that connects the chip-side electrode and the pedestal-side electrode is sandwiched between the flat surface of the pedestal and the element chip. (11)-(16) Solid-state image sensor.

(19)
A pedestal having an opening and shaped around the opening as a flat surface;
An element chip having a curved portion in which the portion corresponding to the opening is curved three-dimensionally toward the opening side, and a flat portion that is extended from the peripheral end of the curved portion and supported by the flat surface of the pedestal,
A photoelectric conversion part arranged on the concave curved surface side of the curved part in the element chip;
An electronic apparatus comprising: an optical system that guides incident light to the photoelectric conversion unit.

DESCRIPTION OF SYMBOLS 1,1-1,1-2,1-3,1-4,1-5 ... Solid-state image sensor, 2, 2a ... Element chip, 3 ... Pixel (photoelectric conversion part), 4 ... Imaging area, 11 ... Curve Part, 13 ... flat part, 15 ... chip side electrode, 21, 21a, 21b, 21c ... pedestal, 23 ... opening, 25 ... flat surface, 31 ... resin (adhesive), w1 ... opening diameter, 35 ... adhesive, 43 ... pedestal side electrode, 45 ... anisotropic conductive adhesive, 51 ... exhaust groove, 55 ... curved concave part, 93 ... optical system, 91 ... electronic device.

Claims (16)

Producing an element chip in which photoelectric conversion portions are arranged on one main surface side;
Providing a pedestal having an opening and shaped around the opening as a flat surface;
Placing the element chip on a flat surface of the pedestal in a state in which the opening of the pedestal is closed and the one main surface side on which the photoelectric conversion units are arranged is directed upward;
In a state where the element chip is fixed to the flat surface of the pedestal, the element chip is three-dimensionally curved toward the opening side by volume shrinking the inside of the opening of the pedestal closed by the element chip. Including
In the element chip, a chip side electrode is disposed on a surface facing the pedestal,
A pedestal side electrode is disposed on the flat surface of the pedestal,
When fixing the element chip on the flat surface of the pedestal, the chip-side electrode and the pedestal side are held by sandwiching an anisotropic conductive adhesive between the flat surface of the pedestal and the element chip. A method for manufacturing a solid-state imaging device for connecting an electrode . The method of manufacturing a solid-state imaging element according to claim 1, wherein the element chip is fixed to the flat surface of the pedestal over the entire circumference of the opening. Opening of the pedestal, the production method according to claim 1 or 2, wherein the solid-state imaging device opening shape of the flat surface is circular. On one main surface of the element chip, a peripheral circuit is provided around an imaging region in which the photoelectric conversion unit is provided,
The method for manufacturing a solid-state imaging device according to any one of claims 1 to 3 , wherein in the step of placing the element chip on a flat surface of the pedestal, the imaging region is disposed within the range of the opening. Before placing the element chip on the flat surface of the pedestal, the opening is filled with uncured resin,
Wherein the inside of the opening when to volume shrinkage The method for manufacturing a solid-state imaging device according to any one of claims 1-4 cure shrinkage of the uncured resin filled in the opening. Wherein when the inside of the opening to the volume shrinkage, a method for manufacturing a solid-state imaging device according to any one of claims 1-4 for exhausting the gas in the opening. The inner wall of the opening is formed as a concave curved surface that is curved in three dimensions,
The manufacturing method of the solid-state image sensor of Claim 6. The element chip | tip curved to the said opening side is fixed to the said concave curved surface with the adhesive agent clamped between the said concave curved surfaces. The method for manufacturing a solid-state imaging element according to claim 1, wherein the opening of the pedestal has a shape in which an opening diameter increases toward a flat surface on which the element chip is placed. A pedestal having an opening and shaped around the opening as a flat surface;
An element chip having a curved portion in which the portion corresponding to the opening is curved in three dimensions toward the opening side, and a flat portion that is extended from the peripheral end of the curved portion and supported by the flat surface of the pedestal;
E Bei a photoelectric conversion units arrayed in the concave surface side of the curved portion in the element chip,
In the element chip, a chip side electrode is disposed on a surface facing the pedestal,
A pedestal side electrode is disposed on the flat surface of the pedestal,
A solid-state imaging device in which an anisotropic conductive adhesive that connects the chip-side electrode and the pedestal-side electrode is sandwiched between the flat surface of the pedestal and the element chip . The solid-state imaging device according to claim 9 , wherein the flat portion of the element chip is disposed on the entire circumference of the curved portion of the element chip and forms the same surface. The solid-state imaging device according to claim 9 or 10, wherein a bottom surface of the curved portion is circular. The solid-state imaging device according to claim 9, wherein a peripheral circuit is disposed around an imaging region in which the photoelectric conversion units are arranged in the element chip. The solid-state imaging device according to claim 9, wherein a resin is filled in the opening of the pedestal. The solid-state imaging device according to claim 9 , wherein the opening of the pedestal has a shape in which the opening diameter increases toward a flat surface on which the element chip is placed. The inner wall of the opening in the pedestal is formed as a concave curved surface that is curved in three dimensions,
The solid-state imaging device according to claim 9 , wherein an element chip curved three-dimensionally toward the opening is fixed to the concave curved surface by an adhesive sandwiched between the concave chip and the concave curved surface. . A pedestal having an opening and shaped around the opening as a flat surface;
An element chip having a curved portion in which the portion corresponding to the opening is curved three-dimensionally toward the opening side, and a flat portion that is extended from the peripheral end of the curved portion and supported by the flat surface of the pedestal,
A photoelectric conversion part arranged on the concave curved surface side of the curved part in the element chip;
E Bei an optical system for guiding incident light to the photoelectric conversion unit,
In the element chip, a chip side electrode is disposed on a surface facing the pedestal,
A pedestal side electrode is disposed on the flat surface of the pedestal,
An electronic device in which an anisotropic conductive adhesive that connects the chip-side electrode and the pedestal-side electrode is sandwiched between the flat surface of the pedestal and the element chip .

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