CN102479794B - Solid camera head and manufacture method thereof and electronic installation - Google Patents
Solid camera head and manufacture method thereof and electronic installation Download PDFInfo
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- CN102479794B CN102479794B CN201110363043.2A CN201110363043A CN102479794B CN 102479794 B CN102479794 B CN 102479794B CN 201110363043 A CN201110363043 A CN 201110363043A CN 102479794 B CN102479794 B CN 102479794B
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- 239000007787 solid Substances 0.000 title claims abstract description 296
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 122
- 238000009434 installation Methods 0.000 title abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 344
- 238000003384 imaging method Methods 0.000 claims abstract description 107
- 238000005452 bending Methods 0.000 claims abstract description 72
- 230000003287 optical Effects 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims description 348
- 239000011230 binding agent Substances 0.000 claims description 75
- 230000000875 corresponding Effects 0.000 claims description 75
- 238000005286 illumination Methods 0.000 claims description 31
- 230000000694 effects Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 29
- 230000002093 peripheral Effects 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000000007 visual effect Effects 0.000 claims 6
- 230000004075 alteration Effects 0.000 abstract description 64
- 230000001629 suppression Effects 0.000 abstract description 31
- 230000002708 enhancing Effects 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 265
- 239000010408 film Substances 0.000 description 184
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 58
- 229910052710 silicon Inorganic materials 0.000 description 58
- 239000010703 silicon Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 50
- 210000002381 Plasma Anatomy 0.000 description 33
- 238000010586 diagram Methods 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 22
- 239000000203 mixture Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000012528 membrane Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 230000023886 lateral inhibition Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000000717 retained Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000149 penetrating Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002441 reversible Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Abstract
The present invention relates to solid camera head and manufacture method thereof and the electronic installation of this solid camera head of employing.Described solid camera head includes: supporting substrate, it includes recess；Solid-state image pickup chip, it is combined on described support substrate, to seal described recess in the field of view of described solid-state image pickup chip；Stress film, it is formed on the surface of described solid-state image pickup chip；And imaging surface, in described imaging surface, by the stress of described stress film, make described field of view to described recess curving.In the present invention, by bending field of view, improve the registration accuracy between the center of field of view and the optical center of camera-lens system, and enhance the suppression of lens aberration.
Description
Cross reference to related applications
The theme that the disclosure of the Japanese earlier patent application JP 2010-260973 that the application comprises on November 24th, 2010 submits to Japan Office is relevant, is here hereby incorporated herein by the full content of this earlier application.
Technical field
The present invention relates to solid camera head and manufacture method thereof and such as camera etc. and include the electronic installation of this solid camera head.
Background technology
For solid camera head (image sensor), it is known that have CMOS solid camera head and CCD solid camera head etc..As shown in figure 39, the camera 161 of solid camera head is used to generally include the solid camera head 162 being formed as writing board shape and the camera-lens system 164 being combined into by multiple lens 163.When object is imaged by camera-lens system, due to the reason of lens aberration (lens aberration) (referred to as filed curvature (field curvature)), focal position produces deviation between the core and peripheral part of imaging surface.In order to suppress aberration, as shown in figure 39, aberration correction is carried out by the multiple lens 163 of combination.
On the other hand, in order to suppress aberration, propose many kinds of solids camera head, in these solid camera heads, the semiconductor chip self being used for constituting solid camera head is bent to cylinder or spheric (for example, with reference to Japanese Unexamined application publication number No.2004-104259, No.2003-188366 and No.2005-243960).
In all solid camera heads with curved surface disclosed by above-mentioned patent documentation, each semiconductor chip is to be split to form by semiconductor wafer, and whole semiconductor chip is formed as bending when semiconductor chip.Such as, as shown in Figure 40 A and Figure 40 B, the base 166 with Cylinder Surface 166a is set, by having the squeezer (presser) 168 of Cylinder Surface 168a, the semiconductor chip 167 of filming is pressed onto on the curved surface 166a of base 166, thus whole semiconductor chip 167 is bent to cylinder.
But, as shown in figure 41, the center O of the semiconductor chip 167 and center P as the field of view 169 of pixel region offsets with one another.Additionally, it is desirable to ground, the center P of field of view and optical center (lens centre) Q of camera-lens system 164 coincides with one another.But, when bending semiconductor chip 167, the center O of semiconductor chip 167 corresponds to curved bottom position (the deepest bottom position), and the center P of field of view deviates this bottom position.Owing to camera-lens system 164 is located so that optical center Q arrives bottom position, thus the center P and optical center Q of field of view offset with one another, and focus is misaligned.That is, when one by one bending semiconductor chip 167, it is impossible to carry out microfabrication, and the optical center Q of the center P of field of view and lens is difficult to overlap each other.Accordingly, it is difficult to focus on equably in whole field of view.
Summary of the invention
Therefore, present invention contemplates that provide can improve between the center of field of view and the optical center of camera-lens system registration accuracy, bend imaging surface and suppress solid camera head and the manufacture method thereof of lens aberration.Additionally, it is also expected to offer such as includes the electronic installations such as the camera of this solid camera head.
An embodiment provides a kind of solid camera head, described solid camera head includes: supporting substrate, it includes recess；Solid-state image pickup chip, it is combined on described support substrate, to seal described recess in the field of view of described solid-state image pickup chip；Stress film, it is formed on the surface of described solid-state image pickup chip；And imaging surface, in described imaging surface, by the stress of described stress film, make described field of view to described recess curving.
In the solid camera head of one embodiment of the present of invention, solid-state image pickup wafer support, to supporting on substrate, so that recess is sealed by field of view, and makes field of view bend by being formed at the stress of the stress film on the surface of solid-state image pickup chip.Owing to curved surface is corresponding to the filed curvature produced by imaging lens system aberration, it is possible to suppress imaging lens system aberration at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.Additionally, only field of view is bent, the center of the field of view of bending and the center of recess can coincide with one another, and semiconductor wafer is combined on support substrate as former state.Therefore, the field of view in each solid-state image pickup portion of semiconductor wafer and each recess supporting substrate can coincide with one another accurately.Center and the optical center of recess coincide with one another, and therefore, the center of field of view can coincide with one another accurately with the optical center of camera-lens system.
Another embodiment of the present invention provides a kind of solid camera head, and described solid camera head includes: supporting substrate, it includes recess；Binding agent, it is filled in described recess, and has volume shrinkage；Solid-state image pickup chip, it is combined on described support substrate, and to seal described recess in the field of view of described solid-state image pickup chip, and described solid-state image pickup chip is bonded by described binding agent；And imaging surface, in described imaging surface, the volume contraction of the described binding agent by being caused by illumination or heating, make described field of view to described recess curving.
In the solid camera head of another embodiment of the present invention, solid-state image pickup wafer support is to supporting on substrate, so that recess is sealed by field of view, and the volume contraction of the binding agent by causing due to illumination or heating makes field of view bend.Owing to curved surface is corresponding to the filed curvature produced by imaging lens system aberration, it is possible to suppress imaging lens system aberration at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.Only field of view is bent, and the center of the field of view of bending and the center of recess can coincide with one another, and semiconductor wafer is combined on support substrate as former state.Therefore, the field of view in each solid-state image pickup portion of semiconductor wafer and each recess supporting substrate can coincide with one another accurately.The center of recess coincides with one another with optical center, and therefore, the center of field of view can coincide with one another accurately with the optical center of camera-lens system.
According to still another embodiment of the invention, it is provided that a kind of solid camera head, described solid camera head includes: supporting substrate, it includes recess；Solid-state image pickup chip, it is combined on described support substrate, to seal described recess in the field of view of described solid-state image pickup chip；And imaging surface, in described imaging surface, by the pressure reduction between the atmospheric pressure of the vacuum in described recess and described solid-state image pickup chip exterior, make described field of view to described recess curving.
In the solid camera head of another embodiment of the present invention, solid-state image pickup wafer support, to supporting on substrate, so that recess is sealed by field of view, and makes field of view bend by the pressure reduction between the atmospheric pressure of the vacuum in recess and solid-state image pickup chip exterior.Owing to curved surface is corresponding to the filed curvature produced by imaging lens system aberration, it is possible to suppress imaging lens system aberration at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.Only field of view is bent, and the center of the field of view of bending can coincide with one another with the center of recess, and semiconductor wafer is combined on support substrate as former state.Therefore, the field of view in each solid-state image pickup portion of semiconductor wafer and each recess supporting substrate can coincide with one another accurately.The center of recess coincides with one another with optical center, and therefore, the center of field of view can coincide with one another accurately with the optical center of camera-lens system.
According to one more embodiment of the present invention, it is provided that a kind of solid camera head, described solid camera head includes: solid-state image pickup chip, and it includes solid-state image pickup portion；Supporting substrate, it is adhered to described solid-state image pickup chip, and has recess, and described recess is to remove the whole region of described corresponding part on the thickness direction of the part corresponding by the field of view with described solid-state image pickup portion at described support substrate and formed；Binding agent, it is filled in described recess, and has volume shrinkage；Hermetic sealing substrate, it is at binding agent described in the sealing backside of described support substrate；And imaging surface, in described imaging surface, the volume contraction of the described binding agent by being caused by illumination or heating, make described field of view to described recess curving.
In the solid camera head of one more embodiment of the present invention, solid-state image pickup wafer support is to supporting on substrate, and in the recess that binding agent is filled in the region by removing on the thickness direction supporting substrate and is formed, and hermetic sealing substrate is formed on the back side supporting substrate.The volume contraction of the binding agent by being caused by illumination or heating, makes field of view bend.Owing to curved surface is corresponding to the filed curvature produced by imaging lens system aberration, it is possible to suppress imaging lens system aberration at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.Only field of view is bent, and the center of the field of view of bending can coincide with one another with the center of recess, and semiconductor wafer is combined on support substrate as former state.Therefore, the field of view in each solid-state image pickup portion of semiconductor wafer and each recess supporting substrate can coincide with one another accurately.The center of recess coincides with one another with optical center, and therefore, the center of field of view can coincide with one another accurately with the optical center of camera-lens system.
A further embodiment according to the present invention, it is provided that the manufacture method of a kind of solid camera head, described manufacture method includes: form multiple recess in supporting substrate；Forming stress film on the surface of semiconductor wafer, described semiconductor wafer includes multiple solid-state image pickup portion；Described semiconductor wafer is combined on described support substrate, to seal each described recess in the field of view in solid-state image pickup portion each described；When described semiconductor wafer is by filming, make the described field of view in the plurality of solid-state image pickup portion to described recess curving by the stress of described stress film；And described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion.
In the manufacture method of the solid camera head of a further embodiment of the present invention, when semiconductor wafer, the field of view in each solid-state image pickup portion is combined on support substrate to seal recess, and the stress of the stress film by being formed on the surface of semiconductor wafer, make the field of view in each solid-state image pickup portion to recess curving.When semiconductor wafer is combined on support substrate as former state, it is possible to carry out the field of view in each solid-state image pickup portion and the coincidence of position between each recess supporting substrate accurately.Additionally, due to when thin films of semiconductor wafers, by the stress of stress film, only make field of view to recess curving, so the center of the center of field of view and recess can coincide with one another.Additionally, due to semiconductor wafer and support substrate are divided into solid-state image pickup portion, it is possible to manufacture the solid camera head making the center of field of view and the optical center of camera-lens system overlap the most accurately.Therefore, it is possible to manufacture the solid camera head of multiple bending the most simultaneously.
According to another embodiment, it is provided that the manufacture method of a kind of solid camera head, described manufacture method includes: form multiple recess supporting on substrate；The binding agent with volume shrinkage is filled in described recess；Being attached on described support substrate by the semiconductor wafer including multiple solid-state image pickup portion, to seal each described recess in the field of view in solid-state image pickup portion each described, and described semiconductor wafer is bonded by described binding agent；When described semiconductor wafer is by filming, the effect of the volume contraction of described binding agent by being caused by illumination or heating, make the described field of view in the plurality of solid-state image pickup portion to described recess curving；And described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion.
In the manufacture method of the solid camera head of an other embodiment of the present invention, when semiconductor wafer, the field of view in each solid-state image pickup portion combines and is bonded on support substrate, to seal the recess being filled with binding agent.Additionally, the volume contraction of the binding agent by being caused by illumination or heating, make the field of view in each solid-state image pickup portion to recess curving.When semiconductor wafer is combined on support substrate as former state, it is possible to carry out field of view in each solid-state image pickup portion and the overlapping of position between each recess supporting substrate accurately.Additionally, when thin films of semiconductor wafers, due to by the volume contraction of binding agent, only make field of view to recess curving, so the center of the center of field of view and recess can coincide with one another accurately.Additionally, due to semiconductor wafer and support substrate are divided into solid-state image pickup portion, it is possible to solid camera head to be manufactured so that the center of field of view overlaps the most accurately with the optical center of camera-lens system.Therefore, it is possible to manufacture the solid camera head of multiple bending the most simultaneously.
Other another embodiment according to the present invention, it is provided that the manufacture method of a kind of solid camera head, described manufacture method includes: form multiple recess supporting on substrate；In a vacuum chamber, the semiconductor wafer including multiple solid-state image pickup portion is attached on described support substrate, to seal each described recess in the field of view in solid-state image pickup portion each described；Hereafter, described vacuum chamber is made to become atmospheric pressure；When described semiconductor wafer is by filming, by the pressure reduction between vacuum and atmospheric pressure, make the described field of view in the plurality of solid-state image pickup portion to described recess curving；And described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion.
In the manufacture method of the solid camera head of the other another embodiment of the present invention, in a vacuum chamber, when semiconductor wafer, the field of view in each solid-state image pickup portion is combined on support substrate, to seal recess.Hereafter, by the inside of vacuum chamber is become atmospheric pressure, recess inside and outside between create pressure reduction, therefore the field of view in each solid-state image pickup portion is to recess curving.When semiconductor wafer is combined on support substrate as former state, it is possible to carry out field of view in each solid-state image pickup portion and the overlapping of position between each recess supporting substrate accurately.Additionally, when thin films of semiconductor wafers, due to the pressure reduction between inside and outside by recess, only make field of view to recess curving, so the center of the center of field of view and recess can coincide with one another accurately.Additionally, due to semiconductor wafer and support substrate are divided into solid-state image pickup portion, it is possible to be fabricated to solid camera head make the center of field of view overlap the most accurately with the optical center of camera-lens system.Therefore, it is possible to manufacture the solid camera head of multiple bending the most simultaneously.
Other another embodiment according to the present invention, provide the manufacture method of a kind of solid camera head, described manufacture method includes: be attached to the semiconductor wafer including multiple solid-state image pickup portion support on substrate, and semiconductor wafer described in filming, then, on the thickness direction of the corresponding part of the field of view with described solid-state image pickup portion of described support substrate, remove the whole region of described corresponding part, to form recess；The binding agent with volume shrinkage is filled in described recess；The hermetic sealing substrate being used for sealing described recess is attached to the back side of described support substrate, to seal described binding agent；The effect of the volume contraction of described binding agent by being caused by illumination or heating, makes described field of view bend；And described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion.
In the manufacture method of the solid camera head of the other another embodiment of the present invention, semiconductor wafer is combined on support substrate as former state, and after filming semiconductor wafer, on the thickness direction of the part corresponding with each field of view supporting substrate, remove on the whole region of this appropriate section, thus form recess, and binding agent is filled in recess and is sealed by hermetic sealing substrate.Then, the volume contraction of the binding agent by causing due to illumination or heating, make the field of view in each solid-state image pickup portion to back curving.When semiconductor wafer is combined on support substrate as former state, it is possible to carry out field of view in each solid-state image pickup portion and the overlapping of position between each recess supporting substrate accurately.Additionally, when semiconductor wafer is by filming, due to by the volume contraction of binding agent, only make field of view to recess curving, so the center of the center of field of view and recess can coincide with one another accurately.Additionally, due to semiconductor wafer and support substrate are divided into solid-state image pickup portion, it is possible to solid camera head to be manufactured so that the center of field of view overlaps the most accurately with the optical center of camera-lens system.Therefore, it is possible to manufacture the solid camera head of multiple bending the most simultaneously.
Other a further embodiment according to the present invention, it is provided that a kind of electronic installation, described electronic installation includes: solid camera head；Optical system, incident illumination is guided to the photoelectric conversion part of described solid camera head by it；And signal processing circuit, it processes the output signal of described solid camera head.Described solid camera head can use the solid camera head in above-described embodiment.
In the electronic installation of the other a further embodiment of the present invention, owing to electronic installation includes the solid camera head of the embodiment of the present invention, so inhibiting imaging lens system aberration, improve the registration accuracy between the center of field of view and the optical center of camera-lens system, and can be by the imaging surface suppression lens aberration of bending.
Solid camera head according to embodiments of the present invention, owing to field of view is bent, so the registration accuracy that improve between the center of field of view and the optical center of camera-lens system.Additionally, due to imaging surface is bent, it is possible to suppression lens aberration.
The manufacture method of solid camera head according to embodiments of the present invention, the solid camera head registration accuracy that can improve between the center of field of view and the optical center of camera-lens system can be manufactured, imaging surface being curved and suppressing lens aberration.
Electronic installation according to an embodiment of the invention, owing to electronic installation includes the solid camera head of the embodiment of the present invention, it is possible to provide the electronic installation with high quality graphic.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the first embodiment of the solid camera head representing the present invention.
Fig. 2 is the schematic diagram of the major part representing backside illuminated type CMOS solid-state image pickup chip.
Fig. 3 A and Fig. 3 B is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing first embodiment.
Fig. 4 A to Fig. 4 C is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing first embodiment.
Fig. 5 A to Fig. 5 C is the procedure chart of the forming method supporting substrate representing the present invention.
Fig. 6 is the schematic diagram of the second embodiment of the solid camera head representing the present invention.
Fig. 7 A and Fig. 7 B is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing the second embodiment.
Fig. 8 A and Fig. 8 B is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing the second embodiment.
Fig. 9 is the schematic diagram of the 3rd embodiment of the solid camera head representing the present invention.
Figure 10 A and Figure 10 B is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing the 3rd embodiment.
Figure 11 A and Figure 11 B is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing the 3rd embodiment.
Figure 12 is the schematic diagram of the first example representing the fourth embodiment of the present invention.
Figure 13 is the schematic diagram of the second example representing the fourth embodiment of the present invention.
Figure 14 A and Figure 14 B is the schematic diagram of the 3rd example representing the fourth embodiment of the present invention.
Figure 15 is the schematic diagram of the 4th example representing the fourth embodiment of the present invention.
Figure 16 is the schematic diagram of the 5th embodiment of the solid camera head representing the present invention.
Figure 17 A and Figure 17 B is the process drawing of the example of the manufacture method of the solid camera head representing the 5th embodiment.
Figure 18 is the schematic diagram of the sixth embodiment of the solid camera head representing the present invention.
Figure 19 A and Figure 19 B is the process drawing of the example of the manufacture method of the solid camera head representing sixth embodiment.
Figure 20 is the schematic diagram of the 7th embodiment of the solid camera head representing the present invention.
Figure 21 A to Figure 21 C is the process drawing of the example of the manufacture method of the solid camera head representing the 7th embodiment.
Figure 22 is the schematic diagram of the 8th embodiment of the solid camera head representing the present invention.
Figure 23 A to Figure 23 C is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing the 8th embodiment.
Figure 24 A and Figure 24 B is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing the 8th embodiment.
Figure 25 A and Figure 25 B is the schematic diagram of the basic schematic structure example of the solid camera head representing and being applied to the 8th embodiment.
Figure 26 is the structure chart of the major part of the backside illuminated type CMOS solid camera head of the concrete example for the solid camera head shown in explanatory diagram 25A.
Figure 27 is the schematic diagram of the 9th embodiment of the solid camera head representing the present invention.
Figure 28 A and Figure 28 B is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing the 9th embodiment.
Figure 29 A and Figure 29 B is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing the 9th embodiment.
Figure 30 is the schematic diagram of the tenth embodiment of the solid camera head representing the present invention.
Figure 31 A and Figure 31 B is the process drawing (Part I) of the example of the manufacture method of the solid camera head representing the tenth embodiment.
Figure 32 A and Figure 32 B is the process drawing (Part II) of the example of the manufacture method of the solid camera head representing the tenth embodiment.
Figure 33 is the schematic diagram of the 11st embodiment of the solid camera head representing the present invention.
Figure 34 is the schematic diagram of the major part representing frontside illuminated type CMOS solid-state image pickup chip.
Figure 35 A to Figure 35 C is the process drawing of the example of the manufacture method of the solid camera head representing the 11st embodiment.
Figure 36 is the schematic diagram of the 12nd embodiment of the solid camera head representing the present invention.
Figure 37 is the schematic diagram of the electronic installation representing the 13rd embodiment of the present invention.
Figure 38 is the schematic diagram representing the camera-lens system when using the solid camera head with bending imaging surface in the embodiment of the present invention.
Figure 39 is the schematic diagram of the camera-lens system when using the solid camera head with smooth imaging surface of the prior art.
Figure 40 A and Figure 40 B is the figure of the manufacture method example representing the solid camera head with bending imaging surface of the prior art.
Figure 41 is to represent by the schematic diagram of relation between center and the optical center of camera-lens system of field of view in the solid camera head that the manufacture method of Figure 40 A and Figure 40 B obtains.
Detailed description of the invention
Hereinafter, embodiments of the invention will be described.Additionally, illustrate in the following sequence.
1, first embodiment (topology example of solid camera head and manufacture method example thereof)
2, the second embodiment (topology example of solid camera head and manufacture method example thereof)
3, the 3rd embodiment (topology example of solid camera head and manufacture method example thereof)
4, the 4th embodiment (topology example of solid camera head and manufacture method example thereof)
5, the 5th embodiment (topology example of solid camera head and manufacture method example thereof)
6, sixth embodiment (topology example of solid camera head and manufacture method example thereof)
7, the 7th embodiment (topology example of solid camera head and manufacture method example thereof)
8, the 8th embodiment (topology example of solid camera head and manufacture method example thereof)
9, the 9th embodiment (topology example of solid camera head and manufacture method example thereof)
10, the tenth embodiment (topology example of solid camera head and manufacture method example thereof)
11, the 11st embodiment (topology example of solid camera head and manufacture method example thereof)
12, the 12nd embodiment (topology example of solid camera head and manufacture method example thereof)
13, the 13rd embodiment (topology example of solid camera head and manufacture method example thereof)
14, the 14th embodiment (topology example of electronic installation)
1, first embodiment
The topology example of solid camera head
Fig. 1 shows the first embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 1 of first embodiment includes supporting substrate 3, backside illuminated type solid-state image pickup chip 4 and the stress film 5 being formed on the surface of solid-state image pickup chip 4, support substrate 3 and include recess 2, solid-state image pickup chip 4 is combined on support substrate 3, to seal recess 2 in field of view.
Such as, support substrate 3 to be formed by the silicon substrate that will not deform, glass substrate etc..In the present embodiment, support substrate 3 to be formed by silicon substrate.The recess 2 supporting substrate 3 is formed to correspond to field of view, and field of view is i.e. the pixel region of the light-receiving pixel being disposed with solid-state image pickup chip 4.Be formed as its opening upwards side along 2a on recess 2 gradually to broaden.On be shaped so that following solid-state image pickup chip 4 is with desired curvature bending along 2a.In FIG, it is shaped so as to inclined plane along 2a on.In addition, on, the shape along 2a may also be formed as having desired radius (R).Solid-state image pickup chip 4 is combined on support substrate 3 in the case of light incident surface side is as upside.
Stress film 5 is to be formed by the film with compressive stress (compressive stress), and this film is formed in the face side relative with light incident surface side of backside illuminated type solid-state image pickup chip 4.Such as, stress film 5 can be formed by plasma nitrided silicon (SiN) film.Plasma nitrided silicon fiml can be formed by controlling the compressive stress that be comprised.Formed across silicon oxide film 6 for constituting the silicon nitride film of stress film 5.It is formed at across silicon oxide film 7 supports the upper surface of substrate 3 for constituting plasma nitrided silicon (SiN) film of hard mask 8.
Additionally, in the present embodiment, by the compressive stress of stress film 5, the solid-state image pickup chip 4 of filming is to recess 2 curving.That is, solid-state image pickup chip 4 along recess 2 along 2a shape bend.By bending, imaging surface (imaging surface) 4A at field of view A is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Especially, in the present embodiment, the bending when semiconductor wafer is combined on support substrate 3 of each field of view, this semiconductor wafer includes multiple solid-state image pickup portion corresponding with each chip area.Hereafter, the structure after semiconductor wafer is divided into each solid-state image pickup chip 4, and segmentation together with supporting substrate 3 is similar to the structure shown in Fig. 1.
Herein, in the semiconductor wafer, being disposed with multiple pixel, pixel is that the photodiode by multiple pixel transistors with as photoelectric conversion part is constituted.Additionally, be also formed with multiple wiring layer, the multilayer wiring in multiple wiring layer is arranged in the face side relative with the back side that light is irradiated.Stress film 5 is formed on the surface being positioned at multiple wiring layer side of semiconductor wafer.Such as, by (between silicon nitride film) adjacent stress film 5 and hard mask 8, and such as by carrying out room-temperature plasma combination, it is combined between semiconductor wafer and support substrate.After the field of view in each solid-state image pickup portion is bent, support substrate 3 and semiconductor wafer is divided into each solid-state image pickup chip 4, thus obtain the solid camera head 1 of the present embodiment.
In solid-state image pickup chip, that is, when semiconductor wafer, after being attached to semiconductor wafer support substrate 3, filming solid-state image pickup chip can be carried out by the grinding at the back side to semiconductor substrate carried out when manufacturing conventional backside illuminated type or etching.Selectively, stress film can be formed, then the semiconductor wafer of filming is combined on support substrate.
Fig. 2 shows the schematic structure (major part) of the example of backside illuminated type solid-state image pickup chip 4.In solid-state image pickup chip 4, multiple pixels being made up of the photodiode PD and multiple pixel transistor Tr as photoelectric conversion part are arranged on the silicon substrate 11 of filming two-dimensionally.Such as, multiple pixel transistors are to be made up of transmission transistor, reset transistor and amplification transistor these three transistor, or are made up of four transistors, i.e. increase in above three transistor and select transistor.In fig. 2, by including that the transmission transistor of floating diffusion portion FD and transmission grid 12 represents multiple pixel transistor Tr.The rear side of silicon substrate 11 is formed lens 14 on color filter 13 and sheet.The not incidence that the multiple wiring layer 18 being disposed with multilayer wiring is formed at silicon substrate 11 across interlayer dielectric 16 has in the front-surface side of light.Being formed with the region of lens 14 on sheet is pixel region 24, and is formed at the inside of pixel region for forming the effective pixel area of field of view.Although not shown, the peripheral circuit portion 22 being made up of logic circuit etc. is formed on the silicon substrate region outside pixel region 24.
In the present embodiment, the stress film 5 being made up of the silicon nitride film with compressive stress is formed on the multiple wiring layer 18 of solid-state image pickup chip 4 across silicon oxide film 6.
Solid camera head 1 according to first embodiment, stress film 5 is formed on the surface being positioned at support substrate 3 side of solid-state image pickup chip 4, and by utilizing the compressive stress of stress film 5, the field of view of solid-state image pickup chip 4 is to recess 2 curving.Therefore, imaging surface is formed as the curved surface with desired curvature.The curved surface with desired curvature is i.e. the curved surface with contemplated curve form.Owing to curved surface is corresponding to the filed curvature produced by imaging lens system aberration, it is possible to the imaging lens system aberration on suppression solid-state image pickup chip 4 such that it is able to reduce the number of the lens 163 of camera-lens system 164.I.e., as shown in figure 38, compared with the number of lenses of the prior art shown in Figure 39, in the solid camera head 1 of imaging surface 4A with bending of the present embodiment, further reduce the number of the lens 163 of camera-lens system 164.The structure of Figure 38 is applied in following embodiment jointly.
Owing to only bending field of view, so the center of field of view of bending and the center of recess 2 can coincide with one another.Additionally, due to semiconductor wafer is supporting on substrate 3 in the combinations of states of semiconductor wafer, so the field of view in each solid-state image pickup portion of semiconductor wafer can coincide with one another accurately with each recess 2 supporting substrate 3.Owing to center and the optical center of recess 2 can coincide with one another accurately, so the center of field of view can coincide with one another accurately with the optical center of camera-lens system.Therefore, it is thus achieved that there is high-precision image.
In the present embodiment, it is possible to carry out ultra wide-angle imaging (ultra wide-angle imaging) by fewer number of lens.The volume of imaging lens system module is about 1/4 in the case of camera chip does not bend.
The manufacture method example of solid camera head
Fig. 3 A to Fig. 4 C shows the example of the manufacture method of the solid camera head 1 of first embodiment.First, as shown in Figure 3A, preparation supports substrate 3 and the semiconductor wafer 21 formed by silicon.Such as, supporting substrate 3 is to be formed by silicon substrate.The recess 2 with width W is formed on support substrate 3, and recess 2 is corresponding with the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Be formed as its A/F along 2a on recess 2 gradually to broaden to upside.The formation of recess 2 will be described by figure 5 below A to Fig. 5 B.It is formed at the upper surface in addition to recess 2 of substrate 3 across silicon oxide film 7 for constituting the plasma nitrided silicon fiml of hard mask 8.
On the other hand, multiple solid-state image pickup portion is formed in advance in the face side of the silicon substrate of semiconductor wafer 21, solid-state image pickup portion is to be made up of take the photograph pixel region, peripheral circuit portion and the multiple wiring layer being disposed with multiple pixel, and pixel includes photodiode PD and multiple pixel transistor.Each solid-state image pickup portion is corresponding to the solid-state image pickup chip being finally divided into.Such as, the thickness t1 of silicon substrate is about 720 μm.The stress film 5 being made up of the plasma nitrided silicon with compressive stress is in the face side that silicon oxide film 6 is formed at semiconductor wafer 21.
Then, as shown in Figure 3 B, when adjacent stress film 5 and hard mask 8, semiconductor wafer 21 is combined on support substrate 3 so that the rear side of semiconductor wafer 21 is upward.Such as, it is supported the combination between substrate 3 and semiconductor wafer 21 by room-temperature plasma combined techniques.When being combined, support substrate 3 and semiconductor wafer 21 is combined with one another to so that each recess 2 supporting substrate 3 is sealed by the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Now, the position that recess 2 and semiconductor wafer 21 combine makes the center of the field of view in each solid-state image pickup portion of semiconductor wafer 21 and the center superposition of recess 2.
Then, as shown in Figure 4 A, grinding semiconductor chip 21 from the back side, and carry out filming by wet etching.Such as, semiconductor wafer 21 thin film chemical conversion desired thickness t2, desired thickness t2 are about 3 μm.
As shown in Figure 4 B, if carried out the filming of semiconductor wafer 21, then by the effect of the compressive stress (contractility) of stress film 5, the field of view in each solid-state image pickup portion in semiconductor wafer 21 is to recess 2 curving.Such as, curved surface can be hemispherical curved surface.By bending field of view, imaging surface is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Then, although not shown, the back side of semiconductor wafer 21 forms lens on color filter and sheet.
Then, the line shown in chain-dotted line 23 along Fig. 4 B, dividing semiconductor wafer 21 and support substrate 3, thus obtain the backside illuminated type CMOS solid camera head 1 of the desired imaging surface with bending shown in Fig. 4 C.
Fig. 5 A-Fig. 5 C shows the example of the forming method supporting substrate 3 including recess 2.As shown in Figure 5A, silicon nitride film the hard mask 8 formed is formed as net-like pattern (reticular pattern) across silicon oxide film 7 on the surface of silicon support substrate 3.Additionally, via hard mask 8, form recess 2 by anisotropic etching (such as, dry etching).
Then, as shown in Figure 5 B, hard mask 8 is slightly removed by etching, so that its narrowed width.
Then, as shown in Figure 5 C, by the hard mask 8 narrowed, carry out isotropic etching (such as, dry etching) to supporting substrate 3, thus gradually broaden being formed as its A/F along 2a on recess 2 to upside.Thus, it is thus achieved that the desired support substrate 3 with recess 2.
The manufacture method of the solid camera head according to first embodiment, is combined in each field of view in each solid-state image pickup portion under semiconductor wafer 21 state on support substrate 3 to seal after recess 2, semiconductor wafer 21 is carried out filming.Additionally, by filming, the compressive stress of the stress film 5 being formed on the surface of semiconductor wafer 21 makes the field of view in each solid-state image pickup portion to recess 2 curving.Owing to semiconductor wafer 21 is combined on support substrate 3 as former state, it is possible to carry out semiconductor wafer 21 and the location matches supported between substrate 3 accurately such that it is able to carry out the field of view in each solid-state image pickup portion and the location matches between each recess 2 supporting substrate 3 accurately.Additionally, due to by the compressive stress of stress film 5, only field of view is to recess 2 curving, so the center of the center of field of view and recess can coincide with one another accurately.In addition, owing to semiconductor wafer 21 and support substrate 3 are divided into the solid-state image pickup portion for constituting semiconductor chip, it is possible to following solid camera head: in this solid camera head, coincide with one another accurately between center and the optical center of camera-lens system of field of view.Therefore, it is possible to manufacture this type of solid camera head 1 multiple the most simultaneously.
This improves the center of field of view and the registration accuracy of the optical center of camera-lens system, and can manufacture and there is the imaging surface of bending and solid camera head 1 that lens aberration is suppressed.Additionally, when bending solid-state image pickup chip itself by the combined method of prior art, the deviation (that is, optical axis deviation) between center and the optical center of field of view is about 50 μm.On the other hand, in the present embodiment, bent due to semiconductor wafer 21 and be combined in as former state on support substrate 3, and only field of view is bent, so below optical axis deviation most 1 μm.
Variation
In the examples described above, after combining semiconductor wafer 21, filming semiconductor wafer 21 during Fig. 4 A.Alternatively, semiconductor wafer is carried out filming, then the semiconductor wafer 21 of filming is combined on support substrate 3 (becoming the state of Fig. 4 A).Owing to the semiconductor wafer 21 of filming is combined on support substrate 3, stress film the compressive stress produced makes field of view bend.By this manufacture method, the solid camera head 1 of first embodiment can be manufactured equally.
2, the second embodiment
The topology example of solid camera head
Fig. 6 shows the second embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 31 of the second embodiment includes supporting substrate 3 and backside illuminated type solid-state image pickup chip 4, supports substrate 3 and includes that recess 2, backside illuminated type solid-state image pickup chip 4 are combined on support substrate 3, so that recess 2 is sealed by field of view.The solid camera head of the present embodiment also includes stress film 5 and binding agent 32, and stress film 5 is formed on the surface of solid-state image pickup chip 4, and binding agent 32 is filled in recess 2, and has volume shrinkage (volumetric shrinkage).
The composition supporting substrate 3 including recess 2 is similar to above-mentioned first embodiment.Additionally, be similar to first embodiment, stress film 5 is also to be formed by the plasma nitrided silicon fiml with compressive stress on the surface relative with light incident surface side of solid-state image pickup chip 4.
Such as, for the binding agent 32 being filled in recess, use under the illumination such as such as ultraviolet light or the binding agent of volume contraction occurs under heating.Even if not carrying out illumination or heating, binding agent 32 still has viscosity.Before solid-state image pickup chip 4 is combined on support substrate 3, filling adhesive 32 in recess 2 so that binding agent 32 is equal with the upper surface supporting substrate 3.
Similar with first embodiment, in the present embodiment, such as, make solid-state image pickup chip 4 and support substrate 3 be bonded to each other by room-temperature plasma combined techniques, and simultaneously, solid-state image pickup chip 4 is adhered to binding agent 32.Additionally, after filming solid-state image pickup chip 4, make binding agent 32 that volume contraction to occur by illumination or heating.Therefore, by volume contraction and the compressive stress of stress film 5, the solid-state image pickup chip 4 of filming is to recess 2 curving.
Owing to other structures are similar to above-mentioned first embodiment, therefore represent appropriate section with identical reference, and omit repeat specification.
Solid camera head 31 according to the second embodiment, outside the compressive stress of de-stress film 5, the whole surface of field of view is also by the uniform tension produced by the volume contraction of binding agent 32.Therefore, whole field of view can more uniformly bend to hemispherical.By compressive stress and the volume contraction of binding agent 32 of proof stress film 5, the curve form of field of view can become the curve form of more desirable (imagination).Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Due to can be in solid-state image pickup chip 4 one lateral inhibition lens aberration such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
The manufacture method example of solid camera head
Fig. 7 A to Fig. 8 B shows the example of the manufacture method of the solid camera head 31 of the second embodiment.Similar with above-mentioned Fig. 3 A and Fig. 3 B, preparation includes support substrate 3 and the semiconductor wafer 21 of recess 2.Forming multiple backside illuminated type solid-state image pickup portion (corresponding to solid-state image pickup chip) on semiconductor wafer 21, backside illuminated type solid-state image pickup portion is to constitute by being disposed with the pixel region of multiple pixel, peripheral circuit portion and multiple wiring layer.The stress film 5 being made up of the plasma nitrided silicon fiml with compressive stress is in the face side that silicon oxide film 6 is formed at semiconductor wafer 21.The hard mask 8 being made up of plasma nitrided silicon fiml is formed at across silicon oxide film 7 on the surface in addition to recess 2 supporting substrate 3.
In the present embodiment, as shown in Figure 7 A, in the recess 2 supporting substrate 3, filling has the binding agent 32 of volume shrinkage so that the surface of binding agent 32 is equal with the surface supporting substrate, and is attached to semiconductor wafer 21 support substrate 3.Such as, when being combined, by room-temperature plasma combined techniques, the stress film 5 of the face side of semiconductor wafer 21 and the upper surface of support substrate 3 are bonded to each other, and semiconductor wafer 21 is bonded to each other with the binding agent 32 in the recess 2 supporting substrate 3.
When being combined, each recess 2 supporting substrate 3 is bonded to each other with semiconductor wafer 21 so that each recess 2 supporting substrate 3 is sealed by the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Now, become and be combined into coincide with one another with the centralized positioning of recess 2 by the center of field of view in each solid-state image pickup portion of semiconductor wafer 21.Binding agent 32 is to be occurred the material of volume contraction to be formed by under the illumination such as heat treatment or such as ultraviolet light irradiation.
Then, as shown in Figure 7 B, grinding semiconductor chip 21 from the back side, and carry out filming by wet etching.Such as, semiconductor wafer 21 thin film chemical conversion desired thickness t2, desired thickness t2 are about 3 μm.Then, binding agent 32 is carried out the illumination of heat treatment or such as ultraviolet light etc..
As shown in Figure 8 A, in semiconductor wafer 21, the action of compressive stress of the combination stress film 5 caused by the filming due to semiconductor wafer 21 and the contraction of binding agent 32 caused due to heat treatment or illumination, the field of view in each solid-state image pickup portion of semiconductor wafer 21 is to recess 2 curving.Such as, curved surface can be hemispherical curved surface.By bending field of view, imaging surface is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Then, although not shown, the back side of semiconductor wafer 21 forms lens on color filter and sheet.
Then, the line shown in chain-dotted line 23 along Fig. 8 A, dividing semiconductor wafer 21 and support substrate 3, thus obtain the backside illuminated type CMOS solid camera head 31 with the desired imaging surface with bending shown in Fig. 8 B.
The manufacture method of the solid camera head according to the second embodiment, after semiconductor wafer 21 is attached to support on substrate 3 as former state, carries out the filming of semiconductor wafer 21, and binding agent 32 is carried out heat treatment or illumination.The compressive stress produced by stress film 5 is applied to the semiconductor wafer 21 of filming, and simultaneously, the binding agent 32 of volume contraction the pulling force produced is applied to recess 2 side.The tension uniform produced by binding agent 32 it is applied to the whole field of view bonded.By both effects, the field of view in each solid-state image pickup portion of semiconductor wafer 21 can be equably to recess 2 curving.By while the compressive stress of proof stress the film 5 and volume contraction of binding agent 32, it is possible to more suitably control the curvature that field of view is bent.Therefore, similar with first embodiment, improve the registration accuracy at the center of field of view and the optical center of camera-lens system such that it is able to manufacture and there is the imaging surface of bending and solid camera head 31 that lens aberration is suppressed.In addition, it is possible to obtain the effect similar with above-mentioned first embodiment.
Variation
In a second embodiment, after combining semiconductor wafer 21, filming semiconductor wafer 21 during Fig. 7 B.Alternatively, semiconductor wafer is carried out filming, then the semiconductor wafer 21 of filming is combined on support substrate 3 (becoming the state of Fig. 7 B).Owing to the semiconductor wafer 21 of filming is combined on support substrate 3, by the compressive stress produced by stress film 5 and the volume contraction of binding agent 32, field of view is made to bend.By this manufacture method, the solid camera head 31 of the second embodiment can be manufactured equally.
3, the 3rd embodiment
The topology example of solid camera head
Fig. 9 shows the 3rd embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 35 of the 3rd embodiment includes supporting substrate 3 and backside illuminated type solid-state image pickup chip 4, supports substrate 3 and includes that recess 2, backside illuminated type solid-state image pickup chip 4 are combined on support substrate 3, so that recess 2 is by field of view airtight one-tenth vacuum state.The solid camera head of the present embodiment also includes that stress film 5, stress film 5 are formed on the surface of solid-state image pickup chip 4, and for making the inside of recess 2 keep vacuum state.
Support substrate 3 including recess 2 is similar to the structure of above-described embodiment and variation.Additionally, be similar to above-described embodiment and variation, stress film 5 is also to be formed by the plasma nitrided silicon fiml with compressive stress on the surface relative with light incident surface side of solid-state image pickup chip 4.
In the present embodiment, when filming solid-state image pickup chip 4, by the common effect of the pressure reduction between compressive stress and the recess 2 and the atmospheric pressure that are in vacuum state of stress film 5, the solid-state image pickup chip 4 of filming is to recess 2 curving.Owing to other structures are similar with above-mentioned first embodiment, therefore represent appropriate section with identical reference, and omit repeat specification.
According to the solid camera head 35 of the 3rd embodiment, outside the compressive stress of de-stress film 5, the whole surface of field of view is also by the uniform tension produced by the pressure reduction between inner surface and the outer surface of solid-state image pickup chip 4.Therefore, whole field of view can more uniformly bend to hemispherical.By compressive stress and the vacuum of recess 2 of proof stress film 5, the curve form of field of view can become the curve form of more desirable (imagination).Therefore, by bending imaging surface, it is possible to increase the center of field of view and the registration accuracy of the optical center of camera-lens system, and the suppression of lens aberration can be strengthened.Can be in solid-state image pickup chip 4 one lateral inhibition lens aberration.In addition, it is thus achieved that the effect similar with above-mentioned first embodiment.
The manufacture method example of solid camera head
Figure 10 A to Figure 11 B shows the example of the manufacture method of the solid camera head 35 of the 3rd embodiment.Similar with above-mentioned Fig. 3 A and Fig. 3 B, preparation includes support substrate 3 and the semiconductor wafer 21 of recess 2.Forming multiple backside illuminated type solid-state image pickup portion (corresponding to solid-state image pickup chip) on semiconductor wafer 21, backside illuminated type solid-state image pickup portion is to constitute by being disposed with the pixel region of multiple pixel, peripheral circuit portion and multiple wiring layer.The stress film 5 being made up of the plasma nitrided silicon fiml with compressive stress is formed at the face side of semiconductor wafer 21 across silicon oxide film 6.The hard mask 8 being made up of plasma nitrided silicon fiml is formed at across silicon oxide film 7 on the surface in addition to recess 2 supporting substrate 3.
In the present embodiment, as shown in Figure 10 A, first, in the vacuum chamber with desired vacuum, by vacuum plasma combined techniques, semiconductor wafer 21 and support substrate 3 are bonded to each other.When being combined, support substrate 3 and semiconductor wafer 21 is combined with one another to so that each recess 2 supporting substrate 3 is sealed by the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Now, recess 2 and semiconductor wafer 21 it is combined with one another to and is located so that the center of field of view in each solid-state image pickup portion of semiconductor wafer 21 and the center of recess 2 coincide with one another.After being combined, the environment of vacuum chamber returns to atmospheric pressure, and semiconductor wafer 21 after combining and support substrate 3 and be fetched into external pressure environment from vacuum chamber.
Then, as shown in Figure 10 B, grinding semiconductor chip 21 from the back side, and carry out filming by wet etching.Such as, semiconductor wafer 21 thin film is turned to desired thickness t2, desired thickness t2 and be about 3 μm.
As shown in Figure 11 A, in semiconductor wafer 21, by the action of compressive stress of stress film 5 caused by the filming of semiconductor wafer 21 and the effect caused by the pressure reduction between vacuum and atmospheric pressure, the field of view in each solid-state image pickup portion of semiconductor wafer 21 is to recess 2 curving.Such as, curved surface can be sphere curved surface.By bending field of view, imaging surface is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Then, although not shown, the back side of semiconductor wafer 21 forms lens on color filter and sheet.
Then, the line shown in chain-dotted line 23 along Figure 11 A, dividing semiconductor wafer 21 and support substrate 3, thus obtain the desired backside illuminated type CMOS solid camera head 35 with bending imaging surface shown in Figure 11 B.
The manufacture method of the solid camera head according to the 3rd embodiment, after combining semiconductor wafer 21 in a vacuum chamber and supporting substrate 3, semiconductor wafer 21 and support substrate 3 after combining are fetched under atmospheric pressure state, and filming semiconductor wafer 21.Due to the filming of semiconductor wafer 21, stress film 5 compressive stress produced is applied to semiconductor wafer 21, and simultaneously, the pressure reduction between the atmospheric pressure on the outer surface of the vacuum in recess 2 and semiconductor wafer the pulling force produced is applied to recess 2 side.It is applied to whole field of view to the tension uniform produced by pressure reduction.By both effects, the field of view in each solid-state image pickup portion of semiconductor wafer 21 can be equably to recess 2 curving.By while the compressive stress of proof stress film 5 and recess 2 in vacuum, it is possible to more suitably control the curvature that field of view is bent.Therefore, similar with first embodiment, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and can manufacture and there is the imaging surface of bending and solid camera head 35 that lens aberration is suppressed.In addition, it is possible to obtain the effect similar with above-mentioned first embodiment.
Variation
In the third embodiment, after combining semiconductor wafer 21, filming semiconductor wafer 21 during Figure 10 B.Alternatively, semiconductor wafer is carried out filming, the most in a vacuum chamber the semiconductor wafer 21 of filming is combined on support substrate 3 (becoming the state of Figure 10 B).After being combined in by semiconductor wafer 21 on support substrate 3, due to semiconductor wafer 21 with support substrate 3 and be fetched under atmospheric pressure state, by pressure reduction and the compressive stress that produced by stress film 5, field of view is made to bend.By this manufacture method, the solid camera head 35 of the 3rd embodiment can be manufactured equally.
4, the 4th embodiment
The topology example of solid camera head and manufacture method example
Figure 12 to Figure 15 shows the 4th embodiment of the solid camera head of the present invention.The present embodiment is applied to control the situation of the curve form of the field of view in above-mentioned first to the 3rd embodiment.
Figure 12 shows first example of the present embodiment.In the first example, the outside of the field of view in each solid-state image pickup portion of semiconductor wafer 21 forms notch 37.The forming position of notch 37 is the position that stress is concentrated when bending field of view.The degree concentrated according to stress, notch 37 can be formed at the centre of the thickness of semiconductor wafer 21 or run through its whole thickness.In the first example, owing to the forming position of notch is the position that stress is concentrated when bending semiconductor wafer 21, so field of view easily can bend when being bent such that it is able to the curve form contemplated by acquisition.After bending semiconductor wafer 21, the line shown in chain-dotted line 23 along Figure 11 A and 12, dividing semiconductor wafer 21 and support substrate 3, thus form desired solid camera head.
Figure 13 shows second example of the present embodiment.In the second example, support substrate 3 be positioned at recess 2 side be shaped so as to meet contemplated curve form.That is, the example of Figure 13 is formed as the shape with radius (R), by the curvature of this shape, recess 2 meets contemplated curve form along 2a.In the second example, owing to being shaped so as to meet the curvature of contemplated curve form along 2a on recess 2, when bending semiconductor wafer 21, field of view bends along the curved surface of 2a according on recess 2, therefore, it is possible to the curve form contemplated by Huo get ing.After being curved, the line shown in chain-dotted line 23 along Figure 13, dividing semiconductor wafer 21 and support substrate 3, thus form desired solid camera head.
Figure 14 A and Figure 14 B shows the 3rd example.In the 3rd example, in each solid-state image pickup portion of the semiconductor wafer 21 of filming, control the thickness of film with Control curve shape.The thickness of the film in solid-state image pickup portion changes or consecutive variations step by step.Selectively, as it has been described above, the thickness of the film in solid-state image pickup portion can be constant on the whole.In the example of Figure 14 A, field of view A has minimum and consistent film thickness d1, and film thickness d2 becomes big step by step or continuously to the periphery of field of view A, and the region corresponding with supporting substrate 3 of the periphery of recess 2 has the film thickness d3 of maximum.In the 3rd example, as shown in Figure 14B, owing to the thickness of semiconductor wafer 21 is change, when bending semiconductor wafer 21, semiconductor wafer 21 is bent into having contemplated curve form.After bending semiconductor wafer 21, the line shown in chain-dotted line 23 along Figure 13, dividing semiconductor wafer 21 and support substrate 3, thus form desired solid camera head.
Figure 15 shows the 4th example.In the 4th example, the film thickness of the face side being formed at semiconductor wafer 21 and the stress film 5 with compressive stress changes along with position.That is, the film thickness d4 of the part that the field of view with solid-state image pickup portion of stress film 5 is corresponding is more than the film thickness d5 of other parts of stress film 5, thus the compressive stress that stress film 5 is at field of view is big.In the 4th example, after the semiconductor wafer 21 of filming Figure 15, the compressive stress of stress film 5 makes field of view bend.But, owing to the stress film 5 film thickness d4 at field of view is more than the film thickness of other parts, so semiconductor wafer 21 easily bends, and it is bent into contemplated curve form.Similar with above-mentioned example, after bending semiconductor wafer 21, along line dividing semiconductor wafer 21 and support substrate 3, thus form desired solid camera head.
First to fourth example of the 4th embodiment shown in Figure 12 to Figure 15 can be applied to the solid camera head described in first embodiment.In addition, if the binding agent of volume contraction will be occurred under heat treatment or illumination to be filled in the recess 2 supporting substrate 3, the most above-mentioned first to fourth example can be applied to the solid camera head described in the second embodiment.Additionally, if the recess 2 supporting substrate 3 is vacuum state, the most above-mentioned first to fourth example can be applied to the solid camera head described in the 3rd embodiment.
5, the 5th embodiment
The example of solid camera head
Figure 16 shows the 5th embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 41 of the 5th embodiment includes supporting substrate 3 and backside illuminated type solid-state image pickup chip 4, supports substrate 3 and includes that recess 2, backside illuminated type solid-state image pickup chip 4 are combined on support substrate 3 so that recess 2 is sealed by field of view.Additionally, form the stress film 42 with tensile stress (tensile stress) on the surface of the light incident side of solid-state image pickup chip 4.For having the stress film 42 of tensile stress, plasma nitrided silicon fiml or plasma oxidation silicon fiml can be used.The surface relative with light incident side of solid-state image pickup chip 4 is formed the dielectric film 43 that solid-state image pickup chip 4 does not produces impact.
Similar to the above embodiments, in the present embodiment, such as, solid-state image pickup chip 4 and support substrate 3 are bonded to each other by room-temperature plasma combined techniques.Additionally, after filming solid-state image pickup chip 4, on the surface of the light incident side that the stress film 42 with tensile stress is formed at solid-state image pickup chip 4.The tensile stress of stress film 42 makes the field of view of the solid-state image pickup chip 4 of filming to recess 2 curving.Lens on color filter and sheet can be formed on stress film 42, or can be formed on color filter and sheet after lens on the solid-state image pickup chip of filming, the surface including lens on sheet is formed stress film 42.
Similar to the above embodiments, in the present embodiment, the bending when semiconductor wafer is attached to support substrate 3 equally of each field of view, semiconductor wafer includes multiple solid-state image pickup portion corresponding with each chip area.Hereafter, semiconductor wafer and support substrate 3 are divided into each solid-state image pickup chip 4, and the structure after segmentation becomes the structure shown in Figure 16.
Owing to other structures are similar with above-mentioned first embodiment, therefore represent corresponding part with identical reference, and omit repeat specification.
Solid camera head 41 according to the 5th embodiment, on the surface of the light incident side that stress film 42 is formed at solid-state image pickup chip 4, by utilizing the tensile stress of stress film 42, the field of view of solid-state image pickup chip 4 is to recess 2 curving, thus forms the imaging surface with curved surface.In the present embodiment, semiconductor wafer 21 is combined on support substrate as former state, and only field of view is bent.Therefore, by bending imaging surface, improve the registration accuracy between the center of field of view and the optical center of camera-lens system, it is suppressed that lens aberration.Due to can be in solid-state image pickup chip 4 one lateral inhibition lens aberration such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
The manufacture method example of solid camera head
Figure 17 A and Figure 17 B shows the example of the manufacture method of the solid camera head 41 of the 5th embodiment.In the present embodiment, similarly, preparation includes support substrate 3 and the semiconductor wafer 21 of recess 2.Forming multiple backside illuminated type solid-state image pickup portion (corresponding to solid-state image pickup chip) on semiconductor wafer 21, backside illuminated type solid-state image pickup portion is to constitute by being disposed with the pixel region of multiple pixel, peripheral circuit portion and multiple wiring layer.Face side at semiconductor wafer 21 forms dielectric film 43.Such as, the hard mask 8 being made up of plasma nitrided silicon fiml is formed at across silicon oxide film 7 on the surface in addition to recess 2 supporting substrate 3.
As shown in Figure 17 A, in the present embodiment, semiconductor wafer 21 and support substrate 3 are bonded to each other.Similar to the above embodiments, such as, when being combined, by room-temperature plasma combined techniques, each recess 2 and semiconductor wafer 21 of supporting substrate 3 are bonded to each other, so that each recess 2 supporting substrate 3 is sealed by the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Then, filming semiconductor wafer 21.There is the stress film 42 of tensile stress in the upper formation in the surface (the most so-called back side) of the light incident side of the semiconductor wafer 21 of filming.Such as, for stress film 42, plasma nitrided silicon fiml or plasma oxidation silicon fiml etc. can be used.
Made the field of view in each solid-state image pickup portion of the semiconductor wafer 21 of filming to recess 2 curving by the tensile stress of stress film 42.Such as, curved surface can be sphere curved surface.By bending field of view, imaging surface is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Then, stress film 42 forms lens on color filter and sheet.Then, the line shown in chain-dotted line 23 along Figure 17 B, dividing semiconductor wafer 21 and support substrate 3, thus obtain the backside illuminated type CMOS solid camera head 41 of the desired imaging surface with bending shown in Figure 16.
Additionally, also on formation sheet after lens, the whole surface including lens on sheet can form stress film 42.
The manufacture method of the solid camera head 41 according to the 5th embodiment, owing to defining the stress film 42 with tensile stress on the surface at the semiconductor wafer 21 of filming, so the field of view in each solid-state image pickup portion is to recess 2 curving, thus define the imaging surface with contemplated curve form.Therefore, similar with first embodiment, improve the registration accuracy at the center of field of view and the optical center of camera-lens system, it is possible to manufacture and there is the imaging surface of bending and solid camera head 41 that lens aberration is suppressed.In addition, it is thus achieved that the effect similar with above-mentioned first embodiment.
6, sixth embodiment
The topology example of solid camera head
Figure 18 shows the sixth embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 44 of sixth embodiment includes supporting substrate 3 and backside illuminated type solid-state image pickup chip 4, supports substrate 3 and includes that recess 2, backside illuminated type solid-state image pickup chip 4 are combined on support substrate 3 so that recess 2 is sealed by field of view.Additionally, the stress film 5 with compressive stress is formed on the surface relative with light incident side of solid-state image pickup chip 4, the stress film 42 with tensile stress is formed on the surface of light incident side.
Similar to the above embodiments, in the present embodiment, such as, when the stress film 5 with compressive stress is formed on solid-state image pickup chip 4, solid-state image pickup chip 4 and support substrate 3 are bonded to each other by room-temperature plasma combined techniques.Additionally, after filming solid-state image pickup chip 4, on the surface of the light incident side that the stress film 42 with tensile stress is formed at solid-state image pickup chip 4.The compressive stress of stress film 5 and the tensile stress of stress film 42 make the field of view of the solid-state image pickup chip 4 of filming to recess 2 curving.Lens on color filter and sheet can be formed on stress film 42, or can be formed on color filter and sheet after lens on the solid-state image pickup chip of filming, the surface including lens on sheet is formed stress film 42.
Similar to the above embodiments, in the present embodiment, the bending when semiconductor wafer is attached to support substrate 3 equally of each field of view, semiconductor wafer includes multiple solid-state image pickup portion corresponding with each chip area.Hereafter, semiconductor wafer and support substrate 3 are divided into each solid-state image pickup chip 4, and the structure after segmentation becomes the structure shown in Figure 18.
Owing to other structures are similar with above-mentioned first embodiment, therefore represent corresponding part with identical reference, and omit repeat specification.
Solid camera head 44 according to sixth embodiment, the stress film 5 and 42 each other with reversal of stress is formed on two surfaces of solid-state image pickup chip 4, by utilizing compressive stress and the tensile stress of stress film 42 of stress film 5, make field of view to recess 2 curving, thus form the imaging surface with curved surface.By controlling compressive stress and tensile stress respectively, it is thus achieved that the curve form of more desirable (imagination).In the present embodiment, semiconductor wafer is combined on support substrate as former state, and only field of view is bent.Therefore, by bending imaging surface, improve the registration accuracy between the center of field of view and the optical center of camera-lens system, and inhibit lens aberration.Can be in solid-state image pickup chip 4 one lateral inhibition lens aberration such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
The manufacture method example of solid camera head
Figure 19 A and Figure 19 B shows the example of the manufacture method of the solid camera head 44 of sixth embodiment.In the present embodiment, similarly, preparation includes support substrate 3 and the semiconductor wafer 21 of recess 2.Forming multiple backside illuminated type solid-state image pickup portion (corresponding to solid-state image pickup chip) on semiconductor wafer 21, backside illuminated type solid-state image pickup portion is to constitute by being disposed with the pixel region of multiple pixel, peripheral circuit portion and multiple wiring layer.The face side relative with light incident side at semiconductor wafer 21 forms the stress film 5 with compressive stress.Herein, the stress film 5 being made up of plasma nitrided silicon fiml is formed across silicon oxide film 6.Such as, the hard mask 8 being made up of plasma nitrided silicon fiml is formed at across silicon oxide film 7 on the surface in addition to recess 2 supporting substrate 3.
As shown in Figure 19 A, in the present embodiment, semiconductor wafer 21 and support substrate 3 are bonded to each other so that stress film 5 and hard mask 8 contact with each other.Such as, similar with above-mentioned situation, when being combined, by room-temperature plasma combined techniques, each recess 2 and semiconductor wafer 21 of supporting substrate 3 are bonded to each other, so that each recess 2 supporting substrate 3 is sealed by the field of view in each solid-state image pickup portion of semiconductor wafer 21 side.Then, filming semiconductor wafer 21.There is the stress film 42 of tensile stress in the upper formation in the surface (the most so-called back side) of the light incident side of the semiconductor wafer 21 of filming.Such as, for stress film 42, plasma nitrided silicon fiml or plasma oxidation silicon fiml etc. can be used.
By having the stress film 5 and 42 (that is, their stress direction is opposite each other) of compressive stress and tensile stress, make the field of view in each solid-state image pickup portion of the semiconductor wafer 21 of filming to recess 2 curving.Such as, curved surface can be hemispherical curved surface.By bending field of view, imaging surface is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Then, stress film 42 forms lens on color filter and sheet.Then, the line shown in chain-dotted line 23 along Figure 19 B, dividing semiconductor wafer 21 and support substrate 3, thus obtain the backside illuminated type CMOS solid camera head 44 of the desired imaging surface with bending shown in Figure 18.
Additionally, also on formation sheet after lens, the whole surface including lens on sheet can form stress film 42.
The manufacture method of the solid camera head 44 according to sixth embodiment, owing to defining the contrary stress film of stress direction each other 5 and 42 on the surface at the semiconductor wafer 21 of filming, so only field of view is to recess 2 curving, thus define the imaging surface with contemplated curve form.
Therefore, similar with first embodiment, improve the registration accuracy at the center of field of view and the optical center of camera-lens system, and can manufacture and there is the imaging surface of bending and solid camera head 44 that lens aberration is suppressed.In addition, it is thus achieved that the effect similar with above-mentioned first embodiment.
7, the 7th embodiment
The topology example of solid camera head
Figure 20 shows the 7th embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 46 of the 7th embodiment includes solid-state image pickup substrate 47 and the support substrate 48 being combined on solid-state image pickup substrate 47, is formed with the backside illuminated type solid-state image pickup portion by filming in solid-state image pickup substrate 47.Additionally, by making field of view A of filming form solid camera head 46 to recess 49 curving, wherein, support the substrate 48 part in recess 49 and be removed.Solid camera head 46 is corresponding to so-called solid-state image pickup chip.
In solid-state image pickup substrate 47, it is formed with pixel region and peripheral circuit portion, multiple pixels in pixel region are arranged on silicon substrate 51, the surface of the light incident side of substrate 51 is formed lens on color filter and sheet, and multiple wiring layer 53 is formed on the surface relative with light incident side of substrate 51 and (sees Fig. 2).At solid-state image pickup substrate 47 after multiple wiring layer side is combined on support substrate 48, filming solid-state image pickup substrate 47, and form lens on color filter and sheet.Such as, support substrate 48 to be made up of silicon substrate.
In the present embodiment, the stress film with compressive stress is formed on the multiple wiring layer 53 of solid-state image pickup substrate 47, or forms the interlayer dielectric of multiple wiring layer 53 by having the film (corresponding to stress film) of compressive stress.Additionally, removed a part for the part corresponding with field of view A supporting substrate 48 by etching, and form recess 49 when solid-state image pickup substrate 47 is attached to support substrate 48.Owing to defining recess 49, so the compressive stress of stress film makes field of view A being in thinning membrane stage to recess 49 curving.
The manufacture method example of solid camera head
Figure 21 A to Figure 21 C shows the example of the manufacture method of the solid camera head 46 of the 7th embodiment.First, during Figure 21 A, the semiconductor wafer 52 that preparation is formed by silicon, semiconductor wafer 52 is formed peripheral circuit and multiple solid-state image pickup portion being made up of pixel region, and on the surface of semiconductor wafer 52, forming multiple wiring layer 53, multiple wiring layer 53 has the multilamellar wiring across interlayer dielectric.Herein, the interlayer dielectric of multiple wiring layer 53 is formed by having the film of compressive stress.Additionally, the stress film with compressive stress also can be formed on multiple wiring layer.Then, at semiconductor wafer 52 after multiple wiring layer 53 side is combined in and combines on support substrate 48, filming semiconductor wafer 52.After carrying out filming, semiconductor wafer 52 forms lens on color filter and sheet.
Then, as illustrated in fig. 21b, by Etch selectivity remove support substrate 48 a part, i.e. remove the part corresponding with field of view A in each solid-state image pickup portion of semiconductor wafer 52 side, thus form recess 49.Field of view A becomes thinning membrane stage.
As shown in fig. 21 c, owing to removing the part corresponding with field of view supporting substrate 48 filming field of view A, so by the effect of the compressive stress of interlayer dielectric, only corresponding with field of view A region bends, thus defines the camera watch region with desired curved surface.Then, the line shown in chain-dotted line 23 along Figure 21 C, dividing semiconductor wafer 52 and support substrate 48, thus obtain the backside illuminated type CMOS solid camera head 46 of the desired imaging surface with bending shown in Figure 20.
Solid camera head 46 according to the 7th embodiment and manufacture method thereof, owing to removing the common support substrate 48 for filming semiconductor wafer 52 partly, so making field of view bend by the compressive stress utilizing interlayer dielectric.Therefore, by bending imaging surface, improve the registration accuracy at the center of field of view and the optical center of camera-lens system, and enhance the suppression of lens aberration.Due to can be in solid-state image pickup chip 4 one lateral inhibition lens aberration such that it is able to reduce the number of lenses of camera-lens system.In the present embodiment, owing to need not to prepare respectively, there is the support substrate 3 of the recess 2 matched with the curve form in above-described embodiment and variation, it is possible to reduce manufacturing process's number of times, and can easily carry out the manufacture of the present embodiment.In addition, it is possible to obtain the effect similar with first embodiment.
8, the 8th embodiment
The topology example of solid camera head
Figure 22 shows the 8th embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.First, the basic schematic structure of the solid camera head of the 8th embodiment will be applied to reference to 25A and Figure 25 B explanation.As shown in fig. 25 a, in being applied to the example of solid camera head of the 8th embodiment, pel array (pixel region) 62 and control circuit 63 are arranged in the first semiconductor chip portion 61, and the logic circuit 64 including the signal processing circuit for processing signal is arranged on the second semiconductor chip portion 65.First and second semiconductor chip portions 61 and 65 are electrically connected to each other, thus backside illuminated type CMOS solid camera head is formed as single semiconductor chip.As shown in Figure 25 B, in other examples of the solid camera head applied in the 8th embodiment, pel array 62 is arranged in the first semiconductor chip portion 61, control circuit 63 and include that the logic circuit 64 of signal processing circuit is arranged in the second semiconductor chip portion 65.First and second semiconductor chip portions 61 and 65 are electrically connected to each other, thus backside illuminated type CMOS solid camera head is formed as single semiconductor chip.
Figure 26 shows the concrete example of the solid camera head of Figure 25 A.Backside illuminated type CMOS solid camera head 101 is formed as having semiconductor chip 66, and semiconductor chip 66 is to be formed with the second semiconductor chip portion 65 stacking being formed with logic circuit 64 by the first semiconductor chip portion 61 being formed with pel array 62 and control circuit 63.First semiconductor chip portion 61 and the second semiconductor chip portion 65 are bonded to each other so that multiple wiring layer 67 and 77 is facing with each other.In this example, the first semiconductor chip portion 61 and the second semiconductor chip portion 65 are bonded to each other by viscous layer 81.But, in addition, the first and second semiconductor chip portions 61 and 65 can be combined by plasma and be combined.By connecting up 69 across interlayer dielectric 68 arranging multiplayer, it is consequently formed multiple wiring layer 67.By connecting up 79 across interlayer dielectric 78 arranging multiplayer, it is consequently formed multiple wiring layer 77.
In first semiconductor substrate 71 being made up of silicon in the first semiconductor chip portion 61, it is formed with pel array (pixel region), being disposed with multiple pixel in pel array two-dimensionally, pixel is to be made up of photodiode PD and the multiple pixel transistor as photoelectric conversion part.Such as, multiple pixel transistors are to be constituted by transmission transistor, reset transistor, amplification transistor these three transistor, or be made up of four transistors, i.e. increase in above three transistor and select transistor.In fig. 26, multiple pixel transistors are to be represented by the transmission transistor Tr1 including floating diffusion portion FD and transmission grid 72.Additionally, control circuit is to be formed by the multiple MOS transistor Tr2 in the first semiconductor substrate 71, MOS transistor Tr2 is to be made up of grid 74 and a pair source electrode and drain region 73.Reference 75 represents element isolation region.
Additionally, in second semiconductor substrate 82 being made up of silicon in the second semiconductor chip portion 65, logic circuit is to be formed by multiple MOS transistor Tr21, MOS transistor Tr21 is to be made up of grid 84 and a pair source electrode and drain region 83.Reference 85 represents element isolation region.
After the first and second semiconductor chip portions 61 and 65 are bonded to each other, using the second semiconductor chip portion 65 as while base substrate, the first semiconductor substrate 71 being formed with pel array is carried out filming, hereafter, removes a part for semiconductor portions completely.What dielectric film 87 covered the first semiconductor substrate removes the whole back side including the part of region 86 include quasiconductor.In quasiconductor removes region 86, connect pad 88 and connection pad 89 is electrically connected to each other via penetrating electrode 91, connection pad 88 forms with the wiring 69 of the first side, semiconductor chip portion 61, and connection pad 89 forms with the wiring 79 of the second side, semiconductor chip portion 65.By dielectric film 92, is insulated in the periphery of penetrating electrode 91.
After filming the first semiconductor substrate 71, form lens 96 on color filter 95 and sheet across light shield layer 93 and planarization film 94, thus form stacking chip-shaped backside illuminated CMOS solid camera head 101.
As shown in figure 22, the solid camera head 101 of the 8th embodiment is formed so that the first semiconductor chip portion 61 and the second semiconductor chip portion 65 are bonded to each other.As shown in Figure 25 A and Figure 25 B, the first semiconductor chip portion 61 includes at least formed at lens on pel array 62, color filter and the sheet on the first semiconductor substrate 102, and is formed at the multiple wiring layer 103 on the surface of the first semiconductor substrate 102.Second semiconductor chip portion 65 includes at least formed at the logic circuit 64 on the second semiconductor substrate 104, and is formed at the multiple wiring layer 105 on the surface of the second semiconductor substrate 104.
Additionally, in the present embodiment, second semiconductor substrate 104 in filming the second semiconductor chip portion 65 so that recess 106 is formed at the part corresponding with field of view A in the first semiconductor chip portion 61.Owing to logic circuit 64 is formed on the pole-face (polar surface) of the second semiconductor substrate, such as, it is formed on the region of thickness about 5nm, it is possible to make logic circuit 64 be retained the second semiconductor substrate 104 thin film chemical conversion.Such as, by carrying out filming, when the interlayer dielectric of multiple wiring layer 105 and 103 is formed as the film with compressive stress, only corresponding with field of view A of filming region is to recess 106 curving.Even if additionally, when have compressive stress membrance separation be formed on the surface of multiple wiring layer time, field of view A still bends similarly with above-mentioned situation.
The manufacture method example of solid camera head
Figure 23 A to Figure 24 B shows the example of the manufacture method of the solid camera head 101 of the 8th embodiment.First, as shown in fig. 23 a, the first semiconductor wafer 611 and the second semiconductor wafer 651 is prepared.In the first semiconductor wafer 611, the first semiconductor substrate 102 being made up of silicon forms the solid-state image pickup portion corresponding with multiple first semiconductor chips, and on the surface of the first semiconductor substrate 102, form multiple wiring layer 103, multiple wiring layer 103 is disposed with multilayer wiring via interlayer dielectric.In the solid-state image pickup portion corresponding with each the first semiconductor chip portion, form the pel array being disposed with multiple pixel, pixel is to be made up of photodiode and multiple pixel transistor, or, form the control circuit being made up of pel array and multiple MOS transistor.Multiple wiring layer 103 is formed as corresponding with each solid-state image pickup portion.In the present embodiment, interlayer dielectric is to be formed by the film with compressive stress.In addition, the film of the compressive stress with active can also be formed on the surface of interlayer dielectric.
In the second semiconductor wafer 651, the second semiconductor substrate 104 being made up of silicon forms the circuit structure portion corresponding with multiple second semiconductor chips, and on the surface of the second semiconductor substrate 104, form multiple wiring layer 105, multiple wiring layer 105 is disposed with multilayer wiring via interlayer dielectric.In circuit structure portion, logic circuit is to be formed by multiple MOS transistors.In the present embodiment, the interlayer dielectric of multiple wiring layer 105 is to be formed by the film with compressive stress.In addition, the film of the compressive stress with active can also be formed on the surface of interlayer dielectric.
Then, as shown in fig. 23b, in conjunction with the first semiconductor wafer 611 and the second semiconductor wafer 651 so that interlayer dielectric is facing with each other.Above-mentioned combination can be carried out by the combination of viscous layer or plasma combination etc..
Then, as shown in fig. 23 c, the first semiconductor substrate 102 of filming the first semiconductor wafer 611.Then, although it is not shown, it is interconnected between solid-state image pickup portion in the first semiconductor wafer 611 and the circuit structure portion in the second semiconductor wafer 651, and on the back side of the first semiconductor substrate 102 of filming, form lens (for example, with reference to Figure 26) on the color filter corresponding with the pel array in each solid-state image pickup portion and sheet.
Then, as shown in fig. 24 a, by selective etch etc., a part for the second semiconductor substrate 104 of filming the second semiconductor wafer 651 from rear side.That is, the region that each field of view A with the first semiconductor substrate 102 side of filming the second semiconductor substrate 104 is corresponding, and form recess so that the circuit structure portion of the face side of the second semiconductor substrate is retained.
As shown in fig. 24b, owing to the part corresponding with field of view A of the second semiconductor substrate 104 is removed, and become thinning membrane stage, so by the effect of the compressive stress of interlayer dielectric, only corresponding with field of view A region is bent, thus defines the camera watch region with desired curved surface.Then, the line shown in chain-dotted line 23 along Figure 24 B, the semiconductor wafer 611 and 651 of segmentation stacking, thus obtain the backside illuminated type CMOS solid camera head 101 of the desired imaging surface with bending shown in Figure 22.
Solid camera head 101 according to the 8th embodiment and manufacture method thereof, after making the first and second semiconductor wafers 611 and 651 be bonded to each other, the part corresponding with each field of view of filming the second semiconductor substrate 104 partly.Due to filming, field of view is made to bend by the compressive stress utilizing interlayer dielectric or stress film.Therefore, by bending imaging surface, improve the registration accuracy at the center of field of view and the optical center of camera-lens system, thus enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In the present embodiment, owing to need not to prepare individually, there is the support substrate 3 of the recess 2 that the curve form with above-described embodiment and variation matches, it is possible to reduce manufacturing process's number of times such that it is able to be easily manufactured the solid camera head of the present embodiment.In addition, it is also possible to obtain the effect similar with first embodiment.
9, the 9th embodiment
The topology example of solid camera head
Figure 27 shows the 9th embodiment of the solid camera head of the present invention.The present embodiment is the situation being applied to backside illuminated type CMOS solid camera head.The solid camera head 111 of the 9th embodiment includes solid-state image pickup substrate 47 and the support substrate 48 being combined on solid-state image pickup substrate 47, is formed with the backside illuminated type solid-state image pickup portion by filming in solid-state image pickup substrate 47.Such as, supporting substrate 48 is to be formed by silicon substrate, and includes recess 112, in recess 112, removes the whole region supporting the corresponding part of field of view A with solid-state image pickup substrate 47 of substrate 48 in a thickness direction.Such as, the binding agent 113 of volume contraction can be occurred to be filled in recess 112 under the illumination of such as ultraviolet light or under heating.Additionally, the hermetic sealing substrate 114 sealing binding agent 113 is combined on the back side supporting substrate 48.Such as, hermetic sealing substrate 114 can be formed by silicon substrate, glass substrate etc..
In solid-state image pickup substrate 47, silicon substrate 51 is formed pixel region and peripheral circuit portion, multiple pixels in pixel region are arranged on silicon substrate 51, on color filter and sheet, lens forming is on the back side of the light incident side of substrate 51, and multiple wiring layer 53 is formed on the surface relative with light incident side of substrate 51.At solid-state image pickup substrate 47 after being combined on support substrate 48 in multiple wiring layer 53 side, filming solid-state image pickup substrate 47, and form lens on color filter and sheet.Solid camera head 46 is corresponding to so-called solid-state image pickup chip.
In the present embodiment, in the support substrate 48 being combined on solid-state image pickup substrate 47, being formed locally recess 112, and field of view A becomes thinning membrane stage, binding agent 113 is filled in recess 112, and binding agent 113 is sealed by hermetic sealing substrate 114.Additionally, by illumination or heat treatment, make binding agent 113 that volume contraction to occur, thus by volume contraction, field of view A only existing in thinning membrane stage bend.
The manufacture method example of solid camera head
Figure 28 A to Figure 29 B shows the example of the manufacture method of the solid camera head 111 of the 9th embodiment.First, as shown in Figure 28 A, the semiconductor wafer 52 that preparation is formed by silicon, forms multiple solid-state image pickup portion being made up of peripheral circuit and pixel region on semiconductor wafer 52, and forms the multiple wiring layer 53 with multilayer wiring via interlayer dielectric on the surface of semiconductor wafer 52.Then, at semiconductor wafer 52 after multiple wiring layer 53 side is attached to support on substrate (semiconductor wafer) 48, filming semiconductor wafer 52.After carrying out filming, semiconductor wafer 52 forms lens on color filter and sheet.
Then, as shown in Figure 28 B, by Etch selectivity remove support substrate 48 a part, i.e. remove the portion corresponding with field of view A in each solid-state image pickup portion of semiconductor wafer 52
Point, thus form recess 112.Field of view A becomes thinning membrane stage.
Then, as shown in figure 29 a, filling adhesive 113 in each recess 112, and combine the hermetic sealing substrate 114 being made up of semiconductor wafer or chip glass, binding agent 113 can occur volume contraction under illumination or heat treatment.The interlayer insulating film 53 in binding agent 113 and the region corresponding with field of view is bonded to each other.
Then, as shown in fig. 29b, binding agent 113 being carried out illumination or heat treatment, make binding agent 113 that volume contraction to occur, only each field of view A bends to spherical, thus imaging surface is formed as the curved surface with desired curvature.Then, the line shown in chain-dotted line 23 along Figure 29 B, dividing semiconductor wafer and support substrate, thus obtain the backside illuminated type CMOS solid camera head 111 of the imaging surface with desired bending shown in Figure 27.
In the solid camera head 111 and manufacture method thereof of the 9th embodiment, the common support substrate 48 for filming semiconductor wafer 52 combined defines the recess 112 corresponding with field of view A, and in recess 112, is filled with binding agent 113.Owing to the binding agent 113 sealed by hermetic sealing substrate 114 has been carried out illumination or heat treatment, so that binding agent 113 occurs volume contraction, so field of view A bends.Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In the present embodiment, owing to need not to prepare individually, there is the support substrate 3 of the recess 2 matched with the curve form in above-described embodiment and variation, it is possible to reduce manufacturing process's number of times, and can easily carry out the manufacture of the present embodiment.In addition, it is possible to obtain the effect similar with first embodiment.
10, the tenth embodiment
The topology example of solid camera head
Figure 30 shows the tenth embodiment of the solid camera head of the present invention.The present embodiment is applied to the situation of backside illuminated type CMOS solid camera head.The solid camera head 116 of the tenth embodiment includes solid-state image pickup substrate 47 and the support substrate 48 being combined on solid-state image pickup substrate 47, is formed with the backside illuminated type solid-state image pickup portion of filming in solid-state image pickup substrate 47.Such as, supporting substrate 48 is to be formed by silicon substrate, and includes recess 112, in recess 112, removes the whole region supporting the corresponding part of field of view A with solid-state image pickup substrate 47 of substrate 48 in a thickness direction.Such as, the whole back side including the inner surface of recess 112 supporting substrate 48 forms stress film 117.Stress film 117 can be formed by the dielectric film with compressive stress or the heat shrink films shunk under heat treatment.In the present embodiment, stress film 117 is formed by heat shrink films.
In solid-state image pickup substrate 47, silicon substrate 51 is formed pixel region and peripheral circuit portion, multiple pixels in pixel region are arranged on silicon substrate 51, the back side of the light incident side of substrate 51 is formed lens on color filter and sheet, and on the surface relative with light incident side of substrate 51, is formed with multiple wiring layer 53.At solid-state image pickup substrate 47 after multiple wiring layer 53 side is combined on support substrate 48, filming solid-state image pickup substrate 47, and form lens on color filter and sheet.Solid camera head 46 is corresponding to so-called solid-state image pickup chip.
In the present embodiment, it is formed locally recess 112 in the support substrate 48 being combined on solid-state image pickup substrate 47, so that field of view A becomes thinning membrane stage, the back side including the inner surface of recess 112 supporting substrate 48 forms the stress film 117 being made up of heat shrink films.Additionally, stress film 117 occurs thermal contraction, thus field of view A only existed under thinning membrane stage bends.
The manufacture method example of solid camera head
Figure 31 A to Figure 32 B shows the example of the manufacture method of the solid camera head 116 of the 9th embodiment.Similar to the above embodiments, as shown in fig. 3 ia, the semiconductor wafer 52 that preparation is formed by silicon, semiconductor wafer 52 is formed multiple solid-state image pickup portion being made up of peripheral circuit and pixel region, and through forming multiple wiring layer 53 on the surface of semiconductor wafer 52, multiple wiring layer 53 has multilayer wiring across interlayer dielectric.Then, at semiconductor wafer 52 after multiple wiring layer 53 side is attached to support on substrate (semiconductor wafer) 48, filming semiconductor wafer 52.After carrying out filming, semiconductor wafer 52 forms lens on color filter and sheet.
Then, as shown in figure 31b, by Etch selectivity remove support substrate 48 a part, i.e. remove the part corresponding with field of view A in each solid-state image pickup portion of semiconductor wafer 52, thus form recess 112.Field of view A becomes thinning membrane stage.
Then, as shown in fig. 32 a, the whole back side supporting substrate 48 forms the stress film 117 being made up of heat shrink films, to fill recess 112.
Then, as shown in fig. 32b, such as, remove a part for the stress film 117 in recess 112 by performing etching the back side, so that stress film 117 is retained on the inner surface of recess 112, thus form cavity 118.Then, counter stress film 117 carries out heat treatment.Due to stress film 117 thermal contraction under heat treatment, so being in field of view A of thinning membrane stage to cavity 118 curving globulate, thus imaging surface is formed as the curved surface with desired curvature.Then, the line shown in chain-dotted line 23 along Figure 32 B, dividing semiconductor wafer and support substrate, thus obtain the backside illuminated type CMOS solid camera head 116 of the desired imaging surface with bending shown in Figure 30.
In the solid camera head 116 and manufacture method thereof of the tenth embodiment, in the common support substrate 48 for filming semiconductor wafer 52 combined, define the recess 112 corresponding with field of view A, and to the whole back side support substrate, define stress film 117 from the inner surface of recess 112.Owing to stress film 117 occurs thermal contraction, so field of view A bends.Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In the present embodiment, owing to need not to prepare individually, there is the support substrate 3 of the recess 2 matched with the curve form in above-described embodiment and variation, it is possible to reduce manufacturing process's number of times such that it is able to easily carry out the manufacture of the present embodiment.In addition, it is possible to obtain the effect similar with first embodiment.
The solid camera head of above-described embodiment and variation is the situation being applied to backside illuminated type solid camera head.But, embodiments of the invention can also apply to frontside illuminated type solid camera head.Will be described below this kind of situation.
11, the 11st embodiment
The topology example of solid camera head
Figure 33 shows the 11st embodiment of the solid camera head of the present invention.The present invention is the situation being applied to frontside illuminated type CMOS solid camera head.The solid camera head 121 of the 11st embodiment includes supporting substrate 3, frontside illuminated type solid-state image pickup chip 124 and the stress film 125 being formed on the surface of solid-state image pickup chip 124, support substrate 3 and include recess 2, frontside illuminated type solid-state image pickup chip 124 is combined on support substrate 3, so that field of view seals recess 2.
Stress film 125 is that the film with tensile stress on the surface of the light incident side by frontside illuminated type solid-state image pickup chip 124 is formed.Such as, stress film 125 is formed on sheet on lens.Such as, for having the stress film 125 of tensile stress, plasma nitrided silicon fiml or plasma oxidation silicon fiml can be used.
As described below, in solid-state image pickup chip 124, silicon substrate 128 is formed pixel region and peripheral circuit portion, pixel region is disposed with multiple pixel being made up of photodiode and multiple pixel transistor, and multiple wiring layer is formed on the surface of silicon substrate 128.Additionally, lens forming is on multiple wiring layer on color filter and sheet.After filming silicon substrate 128 from rear side, the back side of silicon substrate 128 is formed for combining the dielectric film 122 supporting substrate.
Additionally, the present embodiment also includes that being positioned at light irradiates the stress film 125 on the surface of side, and the solid-state image pickup chip 124 being in thinning membrane stage is attached to support on substrate 3.When solid-state image pickup chip 124 supports to support substrate 3, solid-state image pickup chip 124 is formed through the tensile stress of stress film 125 to recess 2 curving.That is, solid-state image pickup chip 124 bends along the shape of 2a according on recess 2.By bending, imaging surface 124A in field of view A is formed as the curved surface that the filed curvature that has with produced by imaging lens system aberration is corresponding.
Similar to the above embodiments, in the present embodiment, the field of view bending when semiconductor wafer is attached to support substrate 3 equally, semiconductor wafer includes multiple solid-state image pickup portion corresponding with each chip area.Hereafter, it is divided into each solid-state image pickup chip 124, so being similar to that the structure shown in Figure 33 after Fen Ge due to semiconductor wafer together with supporting substrate 3.
Figure 34 shows the schematic structure (major part) of the example of frontside illuminated type solid-state image pickup chip 124.In solid-state image pickup chip 124, multiple pixels being made up of the photodiode PD and multiple pixel transistor Tr as photoelectric conversion part are arranged on silicon substrate 128 two-dimensionally, thus define pixel region 126.In Figure 34, by including that the transmission transistor of floating diffusion portion FD and transmission grid 127 represents multiple pixel transistor Tr.Face side at silicon substrate 128 forms multiple wiring layer 133, in wiring layer 133, is disposed with multilayer wiring 132 via interlayer dielectric 131.Additionally, lens 135 are formed as corresponding with pixel region 126 on multiple wiring layer 133 on color filter 134 and sheet.Although not shown, the silicon substrate region outside pixel region 126 forms the peripheral circuit portion including logic circuit etc..As shown in figure 34, in the present embodiment, before support substrate 3 combines solid-state image pickup chip, filming silicon substrate 128 from rear side.
Owing to other structures are similar with above-mentioned first embodiment, so representing the part corresponding to Fig. 1 with identical reference, and omit repeat specification in fig. 33.
The manufacture method example of solid camera head
Figure 35 A to Figure 35 C shows the example of the manufacture method of the solid camera head 121 of the 11st embodiment.As shown in Figure 35 A, forming multiple frontside illuminated type solid-state image pickup portion in the region for each solid-state image pickup chip constituting semiconductor wafer 137, semiconductor wafer 137 is formed by silicon.As it has been described above, each solid-state image pickup portion includes lens etc. on pixel region, peripheral circuit portion, multiple wiring layer, color filter, sheet.Additionally, on the surface of semiconductor wafer 137 including solid-state image pickup portion, i.e. on the whole surface including the surface of lens on sheet, form the stress film 125 with tensile stress.Hereafter, from the back side, semiconductor wafer 137 is ground, wet etching etc., and by its filming to by the position 140 shown in chain-dotted line.The back side of the semiconductor wafer 137 of filming is formed the desired dielectric film 122 supporting substrate 3 for filming.
Then, as shown in Figure 35 B, the semiconductor wafer 137 of filming is attached to include the support substrate 3 of recess 2.When carrying out this and combining, field of view A in each solid-state image pickup portion is directed at, and is bonded to as sealing corresponding recess 2.
Then, as shown in Figure 35 C, if the semiconductor wafer of filming 137 is attached to support substrate 3, then the tensile stress of stress film 125 makes field of view A to recess 2 curving globulate, thus imaging surface is formed as the curved surface with desired curvature.Hereafter, the line shown in chain-dotted line 23 along Figure 35 C, dividing semiconductor wafer and support substrate, thus obtain the frontside illuminated type CMOS solid camera head 121 of the desired imaging surface with bending shown in Figure 33.
Solid camera head 121 according to the 11st embodiment and manufacture method thereof, semiconductor wafer 137 is attached to support substrate 3 as former state, and is formed at the tensile stress of the stress film 125 of face side by utilization, only makes frontside illuminated type field of view A bend.Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
12, the 12nd embodiment
The topology example of solid camera head
Figure 36 shows the 12nd embodiment of the solid camera head of the present invention.The present invention is the situation being applied to frontside illuminated type CMOS solid camera head.In the solid camera head 141 of the 12nd embodiment, the stress film 125 with tensile stress is formed at the face side of frontside illuminated type solid-state image pickup chip 124, and the stress film 5 with compressive stress is formed at rear side, and solid-state image pickup chip 124 is attached to support substrate 3.Solid-state image pickup chip 124 is by filming, and when solid-state image pickup chip 124 is attached to support substrate 3, only field of view A under the effect of the tensile stress of stress film 125 and the compressive stress of stress film 5 to recess 2 curving.
Owing to other structures are similar with above-mentioned 11st embodiment, therefore represent the part corresponding with Figure 33 with identical reference, and in Figure 36, omit repeat specification.
In the manufacture method of solid camera head 141, during Figure 35 B, define the stress film 5 with compressive stress, to substitute dielectric film 122.In addition, solid camera head 141 can be manufactured by the process identical with Figure 35 A to Figure 35 C.
According to the solid camera head 141 of the 12nd embodiment, by utilization, there is the stress film 125 of tensile stress and there is the stress film 5 of compressive stress, it is possible to height controllably bends field of view A.Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
Additionally, second and third embodiments can be applied to frontside illuminated type solid camera head.In the case, the stress film 125 with tensile stress is formed at the face side of solid camera head, to substitute the stress film 5 with compressive stress.Additionally, the 9th and the tenth embodiment can be applied to frontside illuminated type solid camera head.In addition, in frontside illuminated type solid camera head, it is possible to the structure being provided with notch 37 of application the 4th embodiment, or the thickness in the solid-state image pickup portion in Figure 14 A and Figure 14 B can step by step or continually varying structure.
13, the 13rd embodiment
The topology example of solid camera head and the first example of manufacture method thereof
In second embodiment of above-mentioned Fig. 6, be there is by utilization stress film 5 and the compression of binding agent 32 of compressive stress, make field of view bend.On the other hand, although not shown, in the solid camera head of the first example of the 13rd embodiment, eliminate the stress film 5 in the structure of Fig. 6, and only by utilizing the compression of binding agent 32, make field of view bend.I.e., in the solid camera head of the present embodiment, after on the support substrate being formed with multiple recess, combination includes the semiconductor wafer in multiple solid-state image pickup portion corresponding with each chip area, semiconductor wafer and support substrate are divided into each solid-state image pickup chip.In the present embodiment, structure after segmentation includes having supporting substrate, being filled in recess and have the binding agent of volume shrinkage and be combined in and support on substrate so that the solid-state image pickup chip that sealed by field of view of recess of recess, solid-state image pickup chip is combined on support substrate so that recess is sealed by field of view, and is bonded by binding agent.Additionally, the volume contraction of the binding agent by causing due to illumination or heating, make field of view bend to recess, thus provide the imaging surface of the corresponding curved surface of the filed curvature being formed as having with produced by imaging lens system aberration.
In the manufacture method of the solid camera head of the present embodiment, form multiple recess on substrate supporting, and in recess, fill the binding agent with volume shrinkage.Then, include the semiconductor wafer in multiple solid-state image pickup portion corresponding with each chip area supporting combination on substrate, so that each recess is sealed by the field of view in solid-state image pickup portion, and bond semiconductor wafer by binding agent.Then, when thin films of semiconductor wafers, the volume contraction of the binding agent by causing due to illumination or heating, makes the field of view in multiple solid-state image pickup portion bend, and forms the imaging surface with the curved surface corresponding with the filed curvature produced by imaging lens system aberration.Then, semiconductor wafer and support substrate are divided into multiple solid-state image pickup portion for constituting solid-state image pickup chip, thus manufacture desired solid camera head.
The solid camera head of the present embodiment can be applied to backside illuminated type or frontside illuminated type solid camera head.In addition to eliminating stress film 5, the structure of the present embodiment is similar with the structure of the second embodiment.Accordingly, because the structure of the solid camera head of the present embodiment and manufacture method are corresponding to the structure eliminating stress film 5 in Fig. 6,7A, 7B, 8A and 8B and manufacture method, so detailed.
Similar with the second embodiment, according to the solid camera head of the present embodiment, by the volume contraction of binding agent, it is evenly stretched the whole surface of field of view, thus whole field of view can be evenly curved into hemispherical.By controlling the volume contraction of binding agent, the curve form of field of view can become the curve form of more desirable (imagination).Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
The manufacture method of the solid camera head according to the present embodiment, after being attached to semiconductor wafer as former state support substrate, filming semiconductor wafer, and binding agent is carried out heat treatment or illumination.By the binding agent of volume contraction, apply pulling force to semiconductor wafer, with by the semiconductor wafer of filming to recess one side stretching.The tension uniform produced by binding agent it is applied to the whole field of view bonded.Being acted on by this, the field of view in each solid-state image pickup portion of semiconductor wafer can be equably to recess curving.By controlling the volume contraction of binding agent, it is possible to suitably control the curvature that field of view is bent.Therefore, similar with first embodiment, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and can manufacture and there is the imaging surface of bending and solid camera head that lens aberration is suppressed.In addition, it is possible to obtain the effect similar with first embodiment.
The topology example of solid camera head and the second example of manufacture method thereof
In the 3rd embodiment of above-mentioned Fig. 9, be there is by utilization the pressure reduction between stress film 5 and vacuum and the atmospheric pressure of compressive stress, make field of view bend.On the other hand, although not shown, in the solid camera head of the second example of the 13rd embodiment, eliminate the stress film 5 in the structure of Fig. 9, and by utilizing pressure reduction to make field of view bend.I.e., in the solid camera head of the present embodiment, after on the support substrate being formed with multiple recess, combination includes the semiconductor wafer in multiple solid-state image pickup portion corresponding with each chip area, semiconductor wafer and support substrate are divided into each solid-state image pickup chip.In the present embodiment, the structure after segmentation includes having the substrate and being combined in of supporting of recess and supports on substrate so that the solid-state image pickup chip that sealed by field of view of recess.Additionally, by the pressure reduction between vacuum and the atmospheric pressure of solid-state image pickup chip exterior in recess, make field of view bend to recess, thus provide the imaging surface of the corresponding curved surface of the filed curvature having and produced by imaging lens system aberration.
In the manufacture method of the solid camera head of the present embodiment, multiple recess is formed on substrate supporting, and in a vacuum chamber the semiconductor wafer including multiple solid-state image pickup portion corresponding with each chip area is combined on support substrate, so that each recess is sealed by the field of view in solid-state image pickup portion.Hereafter, the inside of vacuum chamber reaches atmospheric pressure.When semiconductor wafer is by filming, by the pressure reduction between vacuum and atmospheric pressure, make the field of view in multiple solid-state image pickup portion to recess curving, thus form the imaging surface with the curved surface corresponding with the filed curvature produced by imaging lens system aberration.Then, semiconductor wafer and support substrate are divided into multiple solid-state image pickup portion for constituting solid-state image pickup chip, thus manufacture desired solid camera head.
The solid camera head of the present embodiment can be applied to backside illuminated type or frontside illuminated type solid camera head.In addition to eliminating stress film 5, the structure of the present embodiment is similar with the 3rd embodiment.Accordingly, because the structure of the solid camera head of the present embodiment and manufacture method are corresponding to eliminating structure and the manufacture method of stress film 5 in Fig. 9,10A, 10B, 11A and 11B, so detailed.
Similar with the 3rd embodiment, according to the solid camera head of the present embodiment, it is evenly stretched the whole surface of field of view by the inner surface of solid-state image pickup chip and the pressure reduction of outer surface such that it is able to whole field of view is evenly curved into hemispherical.By controlling the vacuum in recess, the curve form of field of view can become the curve form of more desirable (imagination).Therefore, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression of lens aberration.Owing to imaging lens system aberration can be suppressed at solid-state image pickup chip-side such that it is able to reduce the number of lenses of camera-lens system.In addition, it is possible to obtain the effect similar with first embodiment.
The manufacture method of the solid camera head according to the present embodiment, after semiconductor wafer and support substrate being bonded to each other in a vacuum chamber, is fetched into atmospheric pressure state, and filming semiconductor wafer by semiconductor wafer and support substrate.Owing to semiconductor wafer is by filming, so by the pressure reduction between the atmospheric pressure of the vacuum in recess and the outer surface side of semiconductor wafer, applying pulling force to semiconductor wafer, with by semiconductor wafer to recess one side stretching.It is applied to whole field of view to the tension uniform caused by pressure reduction.Being acted on by this, the field of view in each solid-state image pickup portion of semiconductor wafer can be equably to recess curving.By controlling the vacuum in recess, it is possible to suitably control the curvature that field of view is bent.Therefore, similar with first embodiment, improve the center of field of view and the registration accuracy of the optical center of camera-lens system such that it is able to manufacture and there is the imaging surface of bending and solid camera head that lens aberration is suppressed.In addition, it is possible to obtain the effect similar with first embodiment.
14, the 14th embodiment
The topology example of electronic installation
Such as, the solid camera head of the above embodiment of the present invention and variation can be applied to the electronic installations such as the such as camera system such as digital camera or video camera or mobile phone or other device with camera function with camera function.
Figure 37 shows the 14th embodiment being applied to camera using the electronic installation example as the present invention.By rest image or mobile image being carried out camera and illustrate the camera of the present embodiment.The camera 151 of the present embodiment includes solid camera head 152, the optical system 153 that incident illumination is directed to the light-receiving detecting means of solid camera head 152 and shutter unit 154.Additionally, camera 151 also includes the signal processing circuit 156 of the output signal of the drive circuit 155 and process solid camera head 152 driving solid camera head 152.
Solid camera head 152 can use any one solid camera head in above-described embodiment and variation.Image light (incident illumination) from object is imaged in the imaging surface of solid camera head 152 by optical system (optical lens) 153.Thus, in scheduled time slot, solid camera head 152 stores signal charge.Optical system 153 can be the optical lens system being made up of multiple optical lenses.
Shutter device 154 controls illumination period and the shading period of solid camera head 152.Drive circuit 155 provides and drives signal, to control transmission operation and the shutter operation of shutter device 154 of solid camera head 152.By providing the driving signal (clock signal) of driving circuit 155, carry out the signal transmission of solid camera head 152.
Signal processing circuit 156 performs various signal processing.The storage media such as such as memorizer or output it is stored in monitor through the picture signal of signal processing.
Therefore, according to the electronic installation of the 14th embodiment, in solid camera head 152, by bending imaging surface, improve the center of field of view and the registration accuracy of the optical center of camera-lens system, and enhance the suppression to lens aberration.Therefore, it is possible to reduce the number of imaging lens system, and the electronic installation with high quality graphic can be provided.For instance, it is possible to provide the camera improving picture quality.
It will be appreciated by those skilled in the art that and require and other factors according to design, various amendment, combination, secondary combination and change can be carried out in the range of appended claims of the invention or its equivalent.
Claims (13)
1. a solid camera head, it includes
Supporting substrate, it includes recess；
Solid-state image pickup chip, it includes field of view and peripheral circuit area, and described solid is taken the photograph
As chip is combined on described support substrate, with the described field of view at described solid-state image pickup chip
The described recess of middle sealing, wherein said recess is formed to correspond to described field of view, and described
Field of view is the pixel region of the light-receiving pixel being disposed with described solid-state image pickup chip；
Stress film, it is formed on the surface of described solid-state image pickup chip；And
Imaging surface, in described imaging surface, by the stress of described stress film, makes described visual angle district
Territory is to described recess curving, wherein,
Described recess is in vacuum state, and
By the pressure reduction between vacuum and atmospheric pressure and the stress of described stress film, described solid is made to take the photograph
Described field of view bending as chip.
2. solid camera head as claimed in claim 1, wherein,
Described solid-state image pickup chip is backside illuminated type solid-state image pickup chip,
Described stress film is formed on the surface relative with light incident side of described solid-state image pickup chip
Compressive stress film, and
By solid-state image pickup chip described in filming, make the described visual angle district of described solid-state image pickup chip
Territory bends.
3. solid camera head as claimed in claim 1, wherein,
Described solid-state image pickup chip is frontside illuminated type solid-state image pickup chip,
Opening on the surface of the light incident side that described stress film is formed in described solid-state image pickup chip should
Power film, and
By solid-state image pickup chip described in filming, make the described visual angle district of described solid-state image pickup chip
Territory bends.
4. the solid camera head as described in any claim in claim 1-3, wherein, institute
The optical center at the center and camera-lens system of stating field of view overlaps.
5. a solid camera head, comprising:
Solid-state image pickup chip, it includes that solid-state image pickup portion, wherein said solid-state image pickup portion include visual angle
Region and peripheral circuit area, and described field of view is disposed with described solid-state image pickup chip
The pixel region of light-receiving pixel；
Supporting substrate, it is adhered to described solid-state image pickup chip, and has recess, wherein said recessed
Portion is formed to correspond to described field of view, and described recess is by described support substrate
Remove described on the thickness direction of the part corresponding with the described field of view in described solid-state image pickup portion
The whole region of corresponding part and formed；
Binding agent, it is filled in described recess, and has volume shrinkage；
Hermetic sealing substrate, it is at binding agent described in the sealing backside of described support substrate；And
Imaging surface, in described imaging surface, by the described binding agent that caused by illumination or heating
Volume contraction, makes described field of view to described recess curving.
6. solid camera head as claimed in claim 5, wherein, the center of described field of view
Overlap with the optical center of camera-lens system.
7. a manufacture method for solid camera head, comprising:
Multiple recess is formed in supporting substrate；
Forming stress film on the surface of semiconductor wafer, described semiconductor wafer includes multiple solid
Image pickup part, wherein said solid-state image pickup portion includes field of view and peripheral circuit area, described visual angle
Region is the pixel region being disposed with light-receiving pixel, and described recess is formed to correspond to described
Field of view；
Described semiconductor wafer is combined on described support substrate, with at solid-state image pickup each described
The described field of view in portion seals each described recess；
When described semiconductor wafer is by filming, made by the stress of described stress film
The described field of view in the plurality of solid-state image pickup portion is to described recess curving；And
Described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion, its
In,
Carry out the described combination of described semiconductor wafer in a vacuum chamber, and
Hereafter, make the air pressure in described vacuum chamber become atmospheric pressure, and
By the effect of the pressure reduction between vacuum and atmospheric pressure and the work of the stress of described stress film
With, carry out the described bending of described field of view.
8. the manufacture method of solid camera head as claimed in claim 7, it also includes:
The plurality of solid-state image pickup portion of described semiconductor wafer is formed as backside illuminated type solid take the photograph
Picture portion,
Wherein, described stress film is formed in the table relative with light incident side in described solid-state image pickup portion
Compressive stress film on face, and
Due to the described filming of described semiconductor wafer, by the compressive stress of described stress film, enter
The described bending of the described field of view of row.
9. the manufacture method of solid camera head as claimed in claim 7, it also includes:
The plurality of solid-state image pickup portion of described semiconductor wafer is formed as frontside illuminated type solid take the photograph
Picture portion,
Wherein, on the surface of the light incident side that described stress film is formed in described solid-state image pickup portion
Tensile stress film, and
By the tensile stress of described stress film, carry out the described bending of described field of view.
10. the manufacturer of the solid camera head as described in any claim in claim 7-9
Method, wherein, carries out the described combination of described semiconductor wafer so that the center of described field of view
Overlap with the optical center of camera-lens system.
The manufacture method of 11. 1 kinds of solid camera heads, comprising:
It is attached to the semiconductor wafer including multiple solid-state image pickup portion support on substrate, and filming
Described semiconductor wafer, then, in the visual angle district with described solid-state image pickup portion of described support substrate
On the thickness direction of the part that territory is corresponding, remove the whole region of described corresponding part, with shape
Becoming recess, wherein said solid-state image pickup portion includes described field of view and peripheral circuit area, described
Field of view is to be disposed with the pixel region of light-receiving pixel, and described recess is formed to correspond to
Described field of view；
The binding agent with volume shrinkage is filled in described recess；
The hermetic sealing substrate being used for sealing described recess is attached to the back side of described support substrate, with close
Seal described binding agent；
The effect of the volume contraction of described binding agent by being caused by illumination or heating, make described in regard
Angular zone bends；And
Described semiconductor wafer and described support substrate are divided into the plurality of solid-state image pickup portion.
The manufacture method of 12. solid camera heads as claimed in claim 11, wherein, carries out institute
State the described combination of semiconductor wafer so that the center of described field of view and camera-lens system
Optical center overlaps.
13. 1 kinds of electronic installations, comprising:
Solid camera head；
Optical system, incident illumination is guided to the photoelectric conversion part of described solid camera head by it；
And
Signal processing circuit, the output signal of its described solid camera head of process,
Wherein, during described solid camera head includes claim 1～6 described in any claim
Solid camera head.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-260973 | 2010-11-24 | ||
| JP2010260973A JP5724322B2 (en) | 2010-11-24 | 2010-11-24 | Method for manufacturing solid-state imaging device |
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| Publication Number | Publication Date |
|---|---|
| CN102479794A CN102479794A (en) | 2012-05-30 |
| CN102479794B true CN102479794B (en) | 2016-12-14 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047195A (en) * | 2006-03-29 | 2007-10-03 | 松下电器产业株式会社 | Semiconductor imaging device and method for manufacturing the same |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047195A (en) * | 2006-03-29 | 2007-10-03 | 松下电器产业株式会社 | Semiconductor imaging device and method for manufacturing the same |
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Granted publication date: 20161214 Termination date: 20211116 |