JP2005191218A - Method of manufacturing solid-state imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging apparatus which can mount a solid-state imaging element in the curving state with good handling property without breakdown during the handling thereof and can enhance the manufacturing yield thereof. <P>SOLUTION: In the manufacturing process of a solid-state imaging apparatus, a protection tape 6 is adhered to the upper surface of a silicon substrate 1 where the solid-state imaging element 2 is formed on the surface layer, and the silicon substrate 1 is then processed for reducing the thickness. Next, the silicon substrate 1 which is reduced in the thickness is allocated on the surface of a base 4 for curving which is coated with a bonding agent 3. Moreover, pressure is applied to the upper surface of the protection tape 6 to expand downward the silicon substrate 1. Consequently, the silicon substrate 1 and the solid-state imaging element 2 are curved to the predetermined shapes. Under this state, the bonding agent 3 is hardened and the silicon substrate 1 or the solid-state imaging element 2 are fixed on the base 4 for curving under the curved state. Thereafter, a solid-state imaging element chip can be obtained through the dicing process. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a solid-state imaging device mounted with a solid-state imaging element curved.

  For example, in a solid-state imaging device using a solid-state imaging device such as a CCD (Charge Coupled Device) mounted on a camera-equipped mobile phone or the like, the number of lenses may be reduced as much as possible in order to reduce the weight or thickness. Desired. However, when the number of lenses is small, if a subject is imaged on a flat solid-state image sensor, defocusing occurs at the center and the periphery of the image, resulting in poor image quality. Therefore, a solid-state imaging device has been proposed in which the solid-state imaging device is thinned to a bendable thickness and mounted in a curved state to prevent such defocusing.

In this type of conventional solid-state imaging device, for example, as disclosed in Patent Document 1, the solid-state imaging device is mounted by the following process. That is, first, the semiconductor wafer is thinned so as to be thin enough not to be damaged even if it is bent. Next, a cutting groove that does not penetrate to the back surface for partitioning into individual semiconductor chips is formed in the semiconductor wafer. And the back surface of the semiconductor wafer in which the cutting groove was formed is ground, and the cutting groove is exposed. Thus, the semiconductor wafer is divided into individual semiconductor chips by the penetration of the cutting grooves. Thereafter, the semiconductor chip is fixed to the fixing means in a curved state using an adhesive or the like. Here, the fixing means fixes the back surface of the semiconductor chip that is appropriately curved within the allowable range, and maintains the curved state of the semiconductor chip. In this conventional solid-state imaging device, an additional requirement is that the thickness of a semiconductor chip processed to be thin enough not to be damaged even when bent is 100 μm or less.
JP 2002-141253 A (paragraph [0009], FIGS. 1 and 2)

  However, for example, when the semiconductor wafer is thinned into a chip by the conventional curved mounting method of the solid-state imaging device disclosed in Patent Document 1, there are the following problems. In other words, when a solid-state image sensor is mounted in a curved shape, the semiconductor wafer is mounted in a curved shape after the semiconductor wafer to be a solid-state image sensor is thinned at the same time as a chip, or after the semiconductor wafer is thinned and then formed into a chip. Like to do. Therefore, it is necessary to handle a thin solid-state image pickup device formed into a chip. For this reason, there exists a problem that the handling property (conveyance property) of a semiconductor chip is bad. In addition, chipped solid-state imaging devices may have chipping on their end faces, etc., or may have a work-affected layer or microcracks when thinned. There is a problem that the image pickup element is damaged and the production yield is lowered.

  The present invention has been made to solve the above-described conventional problems, and the solid-state imaging device can be mounted in a curved state with good handling characteristics without being damaged during handling, and the production yield can be improved. It is an object to be solved to provide a method for manufacturing a solid-state imaging device that can be enhanced.

  The manufacturing method of the solid-state imaging device according to the present invention made to solve the above-described problems includes first to third steps. In the first step, a plurality of solid-state imaging devices formed on the surface layer portion of a thinned semiconductor substrate are arranged on a pedestal in a state where they are connected by a semiconductor substrate or a protective member that protects the semiconductor substrate. In the second step, the plurality of solid-state imaging devices are each fixed to a pedestal in a curved shape to generate an imaging device member. In the third step, the imaging element member is diced for each solid-state imaging element to generate a plurality of solid-state imaging element chips.

  According to the method for manufacturing a solid-state imaging device according to the present invention, the solid-state imaging device can be mounted in a curved state with good handling properties without being damaged during handling, and the production yield can be increased.

Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
Embodiment 1 FIG.
FIG. 1 is a top view of an image sensor wafer manufactured by the manufacturing method according to the first embodiment of the present invention, in which a solid-state image sensor is mounted in a curved manner, before being formed into a chip. 2 is a cross-sectional view of the image sensor wafer taken along line BB in FIG. 1, that is, an elevational cross-sectional view of the image sensor member (solid-state image sensor) according to the first embodiment.
As shown in FIG. 1, the solid-state imaging device is thinned and curved at the wafer level. Therefore, the image sensor member shown in FIG. 2 (the same applies to the image sensor members shown in FIGS. 3 to 14) is a part of the entire image sensor wafer shown in FIG.
As shown in FIG. 2, in this imaging element member, a solid-state imaging element 2 is formed at a predetermined portion of the surface layer portion of the thinned silicon substrate 1. The back surface of the silicon substrate 1 is bonded to the bending base 4 with an adhesive 3. Here, the flat bottom portion of the bending base 4 is provided with a hole portion 5 for discharging the surplus adhesive 3 at the time of pressurization at the time of bonding.

  2 is in a state before dicing (chip formation). That is, this image pickup element member is usually affixed to a sheet such as a dicing tape, and is diced on the surface indicated by AA to form individual solid-state image pickup element chips. Note that the imaging element member may be attached to the jig using wax or the like instead of the sheet.

  Here, the silicon substrate 1 or the solid-state imaging device 2 is bonded to the bending base 4 in a curved shape. When the curved shape is a spherical surface, the radius is the optical characteristics of a lens (not shown), or the like. Depending on the above, it is preferably about 15 mm to 35 mm. The curved shape is not limited to a spherical surface, and may be an aspherical shape.

  The material (material) of the bending pedestal 4 may be any material as long as it can be formed into a desired pedestal shape and can be bonded to the silicon substrate 1 with the adhesive 3. Examples of such materials include silicon wafers, metals such as aluminum, acrylic or epoxy resins, ceramics, glass epoxy substrates, and the like.

  The adhesive 3 may be anything as long as the curved shape of the solid-state imaging device 2 can be maintained. For example, a resin adhesive can be used. Examples of the resin adhesive include a thermosetting adhesive that is cured by heating, an ultraviolet curable adhesive that is cured by irradiation with energy rays such as ultraviolet rays, a room temperature curable adhesive, and an anaerobic adhesive. It is done. Further, the physical properties of the adhesive 3 are not particularly limited. For example, a liquid, sheet, or film adhesive 3 can be used.

  In general, the adhesive 3 is applied to the bending base 4. However, the application form of the adhesive 3 is not limited to this, and may be applied to the silicon substrate 1. The adhesion area is not particularly limited. In the case where the adhesive 3 is in a liquid state, after the silicon substrate 1 (chip) is fixed to the bending base 4, it may be applied in a range in which excess resin does not contaminate the surface of the solid-state imaging device 2. Further, in the case of the sheet-like or film-like adhesive 3, the area may be larger than that of the silicon substrate 1 (wafer).

  As the adhesive 3, for example, if it is an ultraviolet curable adhesive, acrylic TB3000 (TB3052B), epoxy 3100 (3102, etc.) manufactured by Threebond or DESOLITE manufactured by JSR may be used. it can. However, in the case where an ultraviolet curable adhesive is used, the bending base 4 needs to be formed of a material transparent to the ultraviolet rays used, for example, an acrylic resin. When the curving base 4 is formed of an opaque material, such as aluminum, an adhesive 3 that does not require ultraviolet light for curing may be used (for example, an ordinary adhesive manufactured by Sekisui Chemical or Nitto Shinko). .

  The thickness of the adhesive 3 is preferably set to be, for example, about 1 to 10 μm or about several μm after the silicon substrate 1 or the solid-state imaging device 2 is bent. However, even if the thickness of the adhesive 3 is several tens of μm, the silicon substrate 1 and the bending base 4 can be bonded together.

  FIG. 3 is a top view of the bending base 4. As shown in FIG. 3, in this solid-state imaging member, a circular recess (three-dimensionally cylindrical) is formed on the upper surface of the bending base 4 so that the silicon substrate 1 or the solid-state imaging device 2 can be curved. Is provided. The hole 5 is also circular in plan view. However, depending on the curved state of the silicon substrate 1 or the solid-state imaging device 2, the shape of the recess 4a in a plan view may be square (three-dimensionally rectangular prism) as shown in FIG. (A groove-shaped recess) may be used. In the example shown in FIG. 4, the hole 5 is also square in plan view.

Hereinafter, a manufacturing process (manufacturing method) of a solid-state imaging device chip (solid-state imaging device) in which the silicon substrate 1 or the solid-state imaging device 2 is mounted in a curved manner will be described.
First, as shown in FIG. 5A, a protective tape 6 is attached to the upper surface (surface on the side of the solid-state imaging device 2) of the silicon substrate 1 (wafer) on which the solid-state imaging device 2 is formed in the surface layer portion. Thinning process is performed. Here, as the protective tape 6, for example, a back grind tape that is used by being attached to the back surface when grinding (grinding) can be used.

  At that time, when the thickness exceeds about 50 μm, the use of an ordinary back grind tape as the protective tape 6 allows the thinning process to be performed without any trouble. However, when the thickness is about 50 μm or less, since the rigidity of the silicon substrate 1 is low, the deformation is large in the ordinary back grind tape, and the probability of damaging the silicon substrate 1 is increased. For this reason, using a special tape with high rigidity as the protective tape 6 or using a highly rigid wafer support system (means for fixing the wafer in the thinning process) such as a glass substrate, the warp of the silicon substrate 1 is prevented. It is necessary to reduce the thickness by forcing.

  Then, the silicon substrate 1 whose upper surface is protected by the protective tape 6 is ground to a desired thickness by back grinding or the like. Generally, when the thickness exceeds 200 μm, no particular problem occurs even if normal grinding is performed. However, when the thickness is 200 μm or less, there arises a problem that the silicon substrate 1 is damaged due to the residual stress of the work-affected layer generated during grinding. It is necessary to carry out a process called. As a specific method of stress relief, wet etching, dry etching, polishing such as CMP (Chemical Mechanical Polishing), dry polishing, or the like can be used. However, any method may be used as long as it can remove the work-affected layer. Then, the silicon substrate 1 subjected to the stress relief in this way is cleaned.

  On the other hand, two concave portions 4a that are circular in a plan view are provided, and the upper surface (the surface on which the concave portion 4a is provided) of the bending base 4 in which the hole portions 5 are provided in the flat bottom of each concave portion 4a. The adhesive 3 is applied. The adhesive 3 fills each recess 4 a and reaches a position slightly higher than the upper surface of the bending base 4.

  Next, as shown in FIG. 5 (b), the silicon substrate 1 with the protective tape 6 is disposed on the upper surface (on the adhesive 3) of the bending base 4 to which the adhesive 3 is applied. Thereby, the back surface of the silicon substrate 1 is in close contact with the adhesive 3.

  Further, as shown in FIG. 5C, pressure is applied (pressurized) to the upper surface of the protective tape 6 and thus the upper surface of the thinned silicon substrate 1, for example, using compressed air. Thereby, in the part corresponding to the recessed part 4a of the pedestal 4 for bending, the silicon substrate 1 bulges downward to have a desired curved shape, and the solid-state imaging device 2 also has a curved shape (FIG. 5D). reference). In this state, the adhesive 3 is cured, whereby the silicon substrate 1 or the solid-state imaging device 2 is fixed to the bending base 4 in a curved state.

  As shown in FIG. 6, instead of applying pressure to the protective tape 6 (and hence the silicon substrate 1), the silicon substrate 1 is pressed by pressing the upper surface of the silicon substrate 1 with the bending jig 7 after removing the protective tape 6. 1 may bulge downward, and the silicon substrate 1 and the solid-state imaging device 2 may be curved into a desired curved shape.

  As described above, when the silicon substrate 1 and the solid-state imaging device 2 are curved, the thinner the thinned silicon substrate 1 (wafer) is, the smaller the pressure required to bend the silicon substrate 1, that is, The pressure for attaching the silicon substrate 1 to the bending base 4 is reduced. Therefore, from this point of view, it can be said that the thinner the silicon substrate 1 is, the better. However, when the thickness of the silicon substrate 1 is too thin, for example, about several μm, there arises a problem that the silicon substrate 1 buckles when bent. Therefore, the thickness of the silicon substrate 1 must be appropriate depending on the degree of curvature.

Further, when the degree of curvature of the silicon substrate 1 is small, a desired curved shape can be obtained by pasting and thinning the thinned silicon substrate 1 (wafer) as it is.
However, as shown in FIG. 7, when the degree of curvature of the silicon substrate 1 is large, if the silicon substrate 1 is bent as it is, the shape of the bending portion does not become an arc shape, and the central portion of the bending portion is There is almost no bending, and only the peripheral portion of the bending portion is greatly bent. Therefore, in such a case, in order to make the silicon substrate 1 have a desired curved shape, the thinned silicon substrate 1 (wafer) is brought into close contact with (attached to) the bending base 4 and then bent. Before dicing, only the silicon substrate 1 is diced and curved so that there is only one bending portion in each silicon substrate chip (that is, a region divided by dicing), thereby obtaining a desired curved shape. .

  In this way, when the protective tape 6 and thus the silicon substrate 1 are bent so as to have a desired curved shape, the volume of the concave portion 4a is reduced by the bending. For this reason, excess adhesive 3 is discharged through the hole 5. In the first embodiment, one hole 5 is provided in each recess 4a, but the number of holes 5 may be any number. The means for discharging excess adhesive 3 is not limited to hole 5. Any material can be used as long as it can discharge the excess adhesive 3, and for example, a groove or the like may be used.

Further, in the first embodiment, the bending pedestal 4 provided with the cylindrical or quadrangular prism-shaped recess 4a is used, but the shape of the bending pedestal 4 or the recess 4a is limited to such a configuration. Do not mean. Any shape may be used as long as the bending base 4 and the thinned silicon substrate 1 (wafer) can be attached.
For example, as shown in FIG. 8, a bending base 9 including a conical recess 9a and a hole 10 extending downward from the bottom of the recess 9a may be used. When such a bending base 9 is used, the adhesive 3 can be discharged very easily through the hole 10 when the silicon substrate 1 is bent.

  In this way, after the silicon substrate 1 or the solid-state imaging device 2 is fixed to the bending base 4 in a curved state, an imaging device member having a plurality of (two) solid-state imaging devices 2 is manufactured, and then the imaging device member Dicing of the entire wafer is performed to separate the chips into individual solid-state image sensor chips each having one solid-state image sensor 2.

  As shown in FIG. 5D, dicing is performed by cutting the imaging element member along a plane indicated by AA. In this dicing process, first, the dicing tape 8 is attached to the back surface of the bending base 4 to which the silicon substrate 1 or the solid-state imaging device 2 is attached. Subsequently, dicing is performed after the protective tape 6 on the upper surface of the silicon substrate 1 is peeled off. Any dicing method may be used for dicing, for example, mechanical dicing (single dicing or step dicing), water guide laser thermal fusing, laser ablation cutting, laser break, liquid etch cut, dry etch cut, etc. Can be used.

  Thereafter, the diced individual solid-state image pickup device chips are picked up and mounted as solid-state image pickup devices as image pickup devices. Since the diced solid-state image sensor chip is integrated with the bending pedestal 4, the handling property is greatly improved as compared with the solid-state image sensor 2 alone. Further, regarding the chipping of the end face, since the dicing is performed after the silicon substrate 1 is attached to the bending base 4 with the adhesive 3, the possibility of breakage from the chipping can be greatly reduced. Furthermore, since the silicon substrate 1 can be curvedly mounted in the state of a wafer, the production yield is greatly improved and the mass productivity is also greatly improved.

Embodiment 2. FIG.
Hereinafter, Embodiment 2 of the present invention will be described with reference to FIG. However, the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the second embodiment has many common points with the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the first embodiment. In order to avoid duplication of explanation, differences from the first embodiment will be mainly described below.

  FIG. 9 is an elevational cross-sectional view of an image sensor member manufactured by the manufacturing method according to the second embodiment and having a solid-state image sensor curvedly mounted before being formed into a chip. As shown in FIG. 9, also in the second embodiment, basically, as in the first embodiment, the imaging element member includes the thinned silicon substrate 1 in which the solid-state imaging element 2 is formed in the surface layer portion, and The bending pedestal 12 provided with the hole 13 for discharging the surplus adhesive 3 at the time of bonding is bonded with the adhesive 3.

  However, in the second embodiment, the thinned silicon is obtained by utilizing the shrinkage accompanying the hardening of the adhesive 3 and the shape of the recess 12a of the bending base 12, that is, the shape of the portion to which the adhesive 3 is applied. The substrate 1 is curved. Specifically, the adhesive 3 is applied to the upper surface of the bending pedestal 12, and the thinned silicon substrate 1 is bonded onto the bending pedestal 12. Here, the shape of the concave portion 12a of the bending pedestal 12 is such that the portion where the degree of bulging downward of the silicon substrate 1 is to be increased increases the thickness and depth of the adhesive 3. . That is, the amount of shrinkage due to the curing of the adhesive 3 increases as the portion of the silicon substrate 1 that has a greater degree of bulge downward. Therefore, by preferably setting the type of the adhesive 3 and the shape of the recess 12a, the silicon substrate 1 and thus the solid-state imaging device 2 can be bent into a desired curved shape.

  The other points are the same as in the first embodiment. That is, the second embodiment is different from the first embodiment in that the silicon substrate 1 is not bent by pressurization or a bending jig, but is bent using the shrinkage caused by the hardening of the adhesive 3. The other processing processes are basically the same as those in the first embodiment. Therefore, according to the second embodiment, basically the same operations and effects as in the first embodiment can be obtained. Further, when the silicon substrate 1 is bonded to the bending base 12, the silicon substrate 1 is bent without applying pressure to the protective tape 6 or the silicon substrate 1 or pressing the silicon substrate 1 with the bending jig 7. Therefore, the manufacturing process can be simplified (one process is reduced), and the manufacturing cost of the solid-state imaging device chip or the solid-state imaging device can be reduced.

Embodiment 3 FIG.
Hereinafter, Embodiment 3 of the present invention will be described with reference to FIGS. However, the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the third embodiment has many common points with the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the first embodiment. In order to avoid duplication of explanation, differences from the first embodiment will be mainly described below.

FIG. 10 is an elevational cross-sectional view of an image sensor member manufactured by the manufacturing method according to the third embodiment and having a solid-state image sensor curvedly mounted before being formed into a chip. FIG. 11 is a top view of the bending base that constitutes the imaging element member shown in FIG. 10.
As shown in FIG. 10, also in the third embodiment, basically, as in the first embodiment, the imaging element member includes the thinned silicon substrate 1 in which the solid-state imaging element 2 is formed in the surface layer portion, and The bending pedestal 4 provided with the hole 5 for discharging the surplus adhesive 3 at the time of bonding is bonded with the adhesive 3.

However, in the third embodiment, a circuit portion 14 such as a drive circuit is formed on the upper surface of the bending base 4 when the bending base is formed. The other points are the same as in the first embodiment.
As shown in FIG. 11, the circuit portion 14 is formed in advance around the concave portion 4 a of the bending base 4, that is, around a portion where the solid-state imaging device 2 is mounted by bending. The solid-state imaging device 2 is connected to the circuit portion 14 by wire bonding or the like after the chip is divided by performing half dicing from both sides along the B / C line.

  Thus, according to the third embodiment, basically the same operations and effects as in the first embodiment can be obtained. Further, since the circuit portion 14 such as a drive circuit is formed on the upper surface of the bending base 4, the circuit portion of the solid-state imaging device 2 mounted in a curved manner can be formed together with the circuit portion 14, and the solid-state imaging device. The chip or the solid-state imaging device can be further reduced in size, and mounting on a portable device or the like is facilitated.

In the solid-state imaging member shown in FIGS. 10 and 11, the circuit portion 14 is disposed (mounted) on the upper surface of the bending pedestal 4, that is, the bonding surface of the silicon substrate 1 and the bending pedestal 4.
However, as shown in FIG. 12, the circuit portion 14 may be disposed on the back surface (the surface not on the bonding side) of the bending base 4. In this case, wire bonding can be easily performed by providing conduction between the bonding surface and the surface that is not the bonding side through the through hole 20 in the base 4.

Embodiment 4 FIG.
The fourth embodiment of the present invention will be described below with reference to FIGS. 13 (a) and 13 (b). However, the solid-state imaging device chip (solid-state imaging device) or the manufacturing method thereof according to the fourth embodiment has many common points with the solid-state imaging device chip (solid-state imaging device) or the manufacturing method thereof according to the first embodiment. In order to avoid duplication of explanation, differences from the first embodiment will be mainly described below.

  As shown in FIGS. 13A and 13B, also in the fourth embodiment, basically, as in the first embodiment, the imaging element member is formed with the solid-state imaging element 2 in the surface layer portion and is thin. The formed silicon substrate 1 and the bending pedestal 18 provided with the hole 19 for discharging the surplus adhesive 3 at the time of bonding are bonded using the adhesive 3.

In the manufacturing process of the solid-state imaging member (solid-state imaging device) according to the fourth embodiment, first, the thinned silicon substrate 1 is pasted on the bending pedestal 18 as shown in FIG. Subsequently, only the silicon substrate 1 (wafer) is diced.
Next, as shown in FIG. 13B, pressure is applied to the thinned silicon substrate 1 (wafer) so as to obtain a desired curved shape, so that the silicon substrate 1 or the solid-state imaging device 2 is curved to a desired shape. Curve into shape. Then, the adhesive 3 is cured, and the silicon substrate 1 is attached to the bending base 18. Thereafter, the bending pedestal 18 is diced to form the image sensor member into a chip to obtain a solid-state image sensor chip. The other points are the same as in the first embodiment.

  Thus, according to the fourth embodiment, basically the same operations and effects as in the first embodiment can be obtained. Furthermore, by making the shape of the pedestal 18 for bending a desired curved shape, stable bending mounting can be performed. Further, the interval between the concave portions 18a of the bending pedestal 18 can be reduced to about the dicing line width, and the mass productivity of the solid-state imaging device chip can be greatly improved.

Embodiment 5 FIG.
Hereinafter, Embodiment 5 of the present invention will be described with reference to FIGS. However, the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the fifth embodiment has many common points with the solid-state imaging device chip (solid-state imaging device) or the manufacturing method according to the first embodiment. In order to avoid duplication of explanation, differences from the first embodiment will be mainly described below.

  As shown in FIGS. 14A to 14C, in the fifth embodiment as well, basically, as in the first embodiment, the imaging element member is thin-walled with the solid-state imaging element 2 formed on the surface layer portion. The formed silicon substrate 1 and the bending pedestal 18 provided with the hole 19 for discharging the surplus adhesive 3 at the time of bonding are bonded using the adhesive 3.

  In the manufacturing process of the solid-state imaging device chip (solid-state imaging device) according to the fifth embodiment, first, as shown in FIG. 14A, the upper surface of the silicon substrate 1 on which the solid-state imaging device 2 is formed in the surface layer portion. A protective tape 6 is affixed to. Subsequently, as in the case of the first embodiment, the silicon substrate 1 is thinned. Next, the silicon substrate 1 is diced and separated. Then, the separated silicon substrates 1 are separated from each other, and the portion 6a located between the two silicon substrates 1 of the protective tape 6 is expanded (stretched).

  Next, as shown in FIG. 14B, the separated silicon substrates 1 are bonded to the bending base 18. Subsequently, pressure is applied to the protective tape 6 and thus each silicon substrate 1 to curve each silicon substrate 1 or solid-state imaging device 2 into a desired curved shape. Then, the adhesive 3 is cured, and each silicon substrate 1 is attached (mounted) to the bending base 18 in a curved state. Thereafter, as shown in FIG. 14C, the bending pedestal 18 is diced, and the imaging element member is formed into a chip to obtain a solid-state imaging element chip.

  Thus, according to the fifth embodiment, basically the same operation and effect as in the first embodiment can be obtained. Furthermore, since each silicon substrate 1 separated by dicing is bonded to the bending base 18 in a state of being bonded to the protective tape 6, compared to a case where each silicon substrate 1 is individually bonded to the bending base 18. Thus, the handling property of the silicon substrate 1 is improved. For this reason, the production yield is greatly improved, and the mass productivity of the solid-state imaging device chip is also greatly improved.

It is a top view of the image pick-up element wafer before chip-forming by which the solid-state image pick-up element manufactured by the manufacturing method concerning Embodiment 1 of this invention is curvedly mounted. FIG. 3 is an elevational cross-sectional view of the imaging element member according to the first embodiment before being chipped. FIG. 3 is a top view of a bending pedestal constituting the imaging element member shown in FIG. 2. It is a top view of the base for bending concerning a modification. (A)-(d) is the elevational sectional view of the image sensor member concerning Embodiment 1, or its material, and shows the manufacturing process of the solid-state image sensor chip concerning Embodiment 1. It is an elevational sectional view of an image sensor member in which a silicon substrate is bent using a bending jig. It is an elevation sectional view of an image sensor member when the degree of curvature of a silicon substrate is large. It is an elevational sectional view of an image sensor member using a pedestal for bending having a conical recess. FIG. 6 is an elevational cross-sectional view of an image pickup element member according to the second embodiment before chip formation. FIG. 6 is an elevational cross-sectional view of an imaging element member before chip formation according to the third embodiment. It is a top view of the base for bending which comprises the image sensor member shown in FIG. FIG. 10 is an elevational cross-sectional view of an image sensor member before chip formation according to a modification of the third embodiment. (A), (b) is an elevational sectional view of an image sensor member according to the fourth embodiment or a material thereof, and shows a manufacturing process of the solid-state image sensor chip according to the fourth embodiment. (A)-(c) is the elevational sectional view of the image sensor member concerning Embodiment 5, or its material, and shows the manufacturing process of the solid-state image sensor chip concerning Embodiment 5.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate, 2 Solid-state image sensor, 3 Adhesive, 4 Bending base, 5 Hole part, 6 Protection tape, 7 Bending jig, 8 Dicing tape, 9 Bending base, 10 Hole part, 12 Bending base, 13 Hole part, 14 circuit part, 18 pedestal for bending, 19 hole part, 20 through hole.

Claims (6)

A first step of disposing a plurality of solid-state imaging elements formed on a surface layer portion of a thinned semiconductor substrate on a pedestal in a state of being connected by the semiconductor substrate or a protective member protecting the semiconductor substrate;
A second step of generating an image sensor member by fixing the plurality of solid-state image sensors to the pedestal in a curved shape;
And a third step of producing a plurality of solid-state image sensor chips by dicing the image-capturing element member for each solid-state image sensor.   In the second step, the solid-state imaging device is fixed to the pedestal by affixing the semiconductor substrate to the pedestal at a wafer level using an adhesive, and the semiconductor substrate is pressed against the pedestal side. The method of manufacturing a solid-state imaging device according to claim 1, wherein the solid-state imaging device is bent to be curved.   In the second step, the solid-state imaging device is fixed to the pedestal by attaching the semiconductor substrate to the pedestal at a wafer level using an adhesive, and the semiconductor substrate is bonded to the pedestal. The method of manufacturing a solid-state imaging device according to claim 1, wherein the solid-state imaging device is curved by curving with curing shrinkage.   The method for manufacturing a solid-state imaging device according to claim 1, wherein a circuit portion is formed on the pedestal before the first step.   The said 1st process WHEREIN: After arrange | positioning the said solid-state image sensor on the said base, the said semiconductor substrate is diced for every this solid-state image sensor, The said any one of Claims 2-4 characterized by the above-mentioned. Manufacturing method of solid-state imaging device. 2. The method of manufacturing a solid-state imaging device according to claim 1, wherein, in the first step, the semiconductor substrate is diced for each solid-state imaging element before the solid-state imaging element is arranged on the pedestal. .

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