JP5715149B2 - エレクトロルミネッセンス装置の強化された対向電極 - Google Patents
エレクトロルミネッセンス装置の強化された対向電極 Download PDFInfo
- Publication number
- JP5715149B2 JP5715149B2 JP2012540522A JP2012540522A JP5715149B2 JP 5715149 B2 JP5715149 B2 JP 5715149B2 JP 2012540522 A JP2012540522 A JP 2012540522A JP 2012540522 A JP2012540522 A JP 2012540522A JP 5715149 B2 JP5715149 B2 JP 5715149B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hard layer
- layer
- conductive
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 33
- 239000007767 bonding agent Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 140
- 235000019589 hardness Nutrition 0.000 description 21
- 229910052709 silver Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 150000004673 fluoride salts Chemical class 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- HPGNGICCHXRMIP-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dithiine Chemical compound S1CCSC2=CSC=C21 HPGNGICCHXRMIP-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80523—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (10)
- 基板と、この順に前記基板の上に積層された第1の透明な電極、エレクトロルミネッセンス積層構造及び第2の電極と、を有するエレクトロルミネッセンス装置であって、
当該エレクトロルミネッセンス装置は、前記第2の電極の上に位置付けられた第1のハード層と、前記第2の電極の下に位置付けられた第2のハード層とを更に有し、前記第1及び第2の各ハード層は、前記第2の電極の硬度より高い硬度を有し、前記第1のハード層は、非導電性の層であり、酸化物、窒化物及びフッ化物から成る群から選択された少なくとも1つの材料を有し、前記第2のハード層は、半導電性金属酸化物を有し、
当該エレクトロルミネッセンス装置は、前記第1のハード層の上に位置付けられて前記第2の電極に電気的に接触する導電層を更に有する、
エレクトロルミネッセンス装置。 - 前記第1のハード層は、前記第2の電極の上に直接、位置付けられている、請求項1に記載のエレクトロルミネッセンス装置。
- 前記第1のハード層の厚さは5nm以上且つ10μm以下である、請求項1又は2に記載のエレクトロルミネッセンス装置。
- 電気的に前記第2の電極に直接的に又は間接的に接触するように備えられた少なくとも1つの接触手段及びカバー手段を更に有する、請求項1乃至3の何れか一項に記載のエレクトロルミネッセンス装置。
- 前記少なくとも1つの接触手段は、導電性接合剤、機械的接触手段、導電性スプリング、導電性ポスト及び導電性スペーサから成る群から選択される、請求項4に記載のエレクトロルミネッセンス装置。
- ゲッタ材料を更に有する、請求項1乃至5の何れか一項に記載のエレクトロルミネッセンス装置。
- 請求項1乃至6の何れか一項に記載のエレクトロルミネッセンス装置を有する光源、ランプ、モニタ、スイッチ又はディスプレイ。
- エレクトロルミネッセンス装置を製造する方法であって:
基板を用意するステップ;
第1の透明な電極、エレクトロルミネッセンス積層構造及び第2の電極をこの順に前記基板上に堆積するステップ;
前記第2の電極の堆積の後に、第1のハード層を堆積するステップであり、前記第1のハード層は、前記第2の電極の硬度より高い硬度を有し、前記第1のハード層は、非導電性の層であり、酸化物、窒化物及びフッ化物から成る群から選択された少なくとも1つの材料を有する、ステップ;
前記第2の電極の堆積の前に、第2のハード層を堆積するステップであり、前記第2のハード層は、前記第2の電極の硬度より高い硬度を有し、且つ半導電性金属酸化物を有する、ステップ;
前記第2の電極と電気的に接触する導電層を、前記第1のハード層の上に堆積するステップ;
を有する方法。 - 前記エレクトロルミネッセンス装置の適切な動作を検査するために、前記エレクトロルミネッセンス装置をプローブと一時的に接触させるステップを更に有する、請求項8に記載の方法。
- 前記エレクトロルミネッセンス装置に、カバー手段、少なくとも1つの接触手段及び/又はゲッタ材料を取り付けるステップを更に有する、請求項8又は9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09177352 | 2009-11-27 | ||
EP09177352.3 | 2009-11-27 | ||
PCT/IB2010/055294 WO2011064700A1 (en) | 2009-11-27 | 2010-11-19 | Strengthened counter electrode of electroluminescent devices |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013512542A JP2013512542A (ja) | 2013-04-11 |
JP2013512542A5 JP2013512542A5 (ja) | 2014-01-16 |
JP5715149B2 true JP5715149B2 (ja) | 2015-05-07 |
Family
ID=43639040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012540522A Active JP5715149B2 (ja) | 2009-11-27 | 2010-11-19 | エレクトロルミネッセンス装置の強化された対向電極 |
Country Status (7)
Country | Link |
---|---|
US (2) | US9425425B2 (ja) |
EP (1) | EP2504873B1 (ja) |
JP (1) | JP5715149B2 (ja) |
KR (1) | KR101858737B1 (ja) |
CN (1) | CN102668161B (ja) |
TW (1) | TW201129247A (ja) |
WO (1) | WO2011064700A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5795935B2 (ja) * | 2010-10-20 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 照明装置 |
KR102202145B1 (ko) * | 2014-03-28 | 2021-01-13 | 삼성디스플레이 주식회사 | 완충패드를 갖는 표시장치 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069442A (en) | 1997-09-18 | 2000-05-30 | Eastman Kodak Company | Organic electroluminescent device with inorganic electron transporting layer |
JP2001052858A (ja) * | 1999-08-05 | 2001-02-23 | Futaba Corp | 有機el表示装置 |
WO2001015244A1 (en) | 1999-08-20 | 2001-03-01 | Emagin Corporation | Organic light emitting diode device with high work function metal-oxide anode layer and method of fabrication of same |
US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
JP3773423B2 (ja) | 2001-06-11 | 2006-05-10 | Tdk株式会社 | 有機el素子 |
JP2003017245A (ja) * | 2001-06-27 | 2003-01-17 | Sony Corp | 有機elディスプレイ及びその駆動回路接続方法 |
TW519853B (en) | 2001-10-17 | 2003-02-01 | Chi Mei Electronic Corp | Organic electro-luminescent display and its packaging method |
JP4310984B2 (ja) | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | 有機発光表示装置 |
EP2276088B1 (en) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
JP4543691B2 (ja) | 2004-02-03 | 2010-09-15 | 株式会社島津製作所 | 有機エレクトロルミネッセンス素子およびその製造方法 |
TWI231723B (en) * | 2004-04-16 | 2005-04-21 | Ind Tech Res Inst | Organic electroluminescence display device |
US8241467B2 (en) * | 2004-08-10 | 2012-08-14 | Global Oled Technology Llc | Making a cathode structure for OLEDs |
JP4329740B2 (ja) * | 2004-10-22 | 2009-09-09 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置 |
JP2006210233A (ja) * | 2005-01-31 | 2006-08-10 | Optrex Corp | 有機elパネルの点灯検査装置 |
JP5214440B2 (ja) * | 2005-05-23 | 2013-06-19 | トムソン ライセンシング | 複合透明上部電極をもつ照明または画像表示のための発光パネル |
US7855498B2 (en) * | 2005-07-27 | 2010-12-21 | Koninklijke Philips Electronics N.V. | Light-emitting device with a sealing integrated driver circuit |
JP2007095518A (ja) | 2005-09-29 | 2007-04-12 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス表示装置 |
US20070164673A1 (en) | 2006-01-18 | 2007-07-19 | Au Optronics Corporation | Organic electro-luminescent display device and method for making same |
US20070241665A1 (en) * | 2006-04-12 | 2007-10-18 | Matsushita Electric Industrial Co., Ltd. | Organic electroluminescent element, and manufacturing method thereof, as well as display device and exposure apparatus using the same |
TWI307611B (en) | 2006-06-05 | 2009-03-11 | Au Optronics Corp | Organic electroluminescence device and organic electroluminescence panel using the same |
US20080100202A1 (en) | 2006-11-01 | 2008-05-01 | Cok Ronald S | Process for forming oled conductive protective layer |
KR100875099B1 (ko) | 2007-06-05 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
US8227978B2 (en) | 2007-10-10 | 2012-07-24 | Samsung Electronics Co., Ltd. | White organic light emitting device and color display apparatus employing the same |
-
2010
- 2010-11-19 KR KR1020127016606A patent/KR101858737B1/ko active IP Right Grant
- 2010-11-19 WO PCT/IB2010/055294 patent/WO2011064700A1/en active Application Filing
- 2010-11-19 US US13/509,929 patent/US9425425B2/en active Active
- 2010-11-19 JP JP2012540522A patent/JP5715149B2/ja active Active
- 2010-11-19 CN CN201080053540.6A patent/CN102668161B/zh active Active
- 2010-11-19 EP EP10796485.0A patent/EP2504873B1/en active Active
- 2010-11-24 TW TW099140624A patent/TW201129247A/zh unknown
-
2016
- 2016-07-25 US US15/218,410 patent/US20160336535A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN102668161B (zh) | 2015-12-09 |
EP2504873A1 (en) | 2012-10-03 |
KR20120113742A (ko) | 2012-10-15 |
US20160336535A1 (en) | 2016-11-17 |
WO2011064700A1 (en) | 2011-06-03 |
US9425425B2 (en) | 2016-08-23 |
US20120228667A1 (en) | 2012-09-13 |
KR101858737B1 (ko) | 2018-05-18 |
EP2504873B1 (en) | 2020-01-08 |
JP2013512542A (ja) | 2013-04-11 |
TW201129247A (en) | 2011-08-16 |
CN102668161A (zh) | 2012-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI557893B (zh) | 有機發光二極體顯示器及其製造方法 | |
US8890136B2 (en) | Planar light emitting device | |
JP5624061B2 (ja) | 直列接続されたoled | |
US8742526B2 (en) | Photoelectric conversion device | |
JP5850749B2 (ja) | 有機エレクトロルミネッセンス装置 | |
KR20160043227A (ko) | 유기 발광 표시 장치 | |
JP2007242436A (ja) | 有機エレクトロルミネッセンス装置の製造方法及び有機エレクトロルミネッセンス装置 | |
US9196863B2 (en) | Organic light emitting display device and method of manufacturing the same | |
KR101798212B1 (ko) | 유기 전계발광 소자 | |
KR101668471B1 (ko) | 캡슐화된 전기 발광 장치 | |
KR20140026647A (ko) | 광전자 부품을 위한 캡슐화 구조물 및 광전자 부품을 캡슐화하는 방법 | |
JP5702736B2 (ja) | エレクトロルミネセント素子 | |
TWI593309B (zh) | 電致發光裝置 | |
US8847258B2 (en) | Organic electroluminescent devices | |
JP2009277549A (ja) | 有機elパネル、及び有機elパネルの欠陥検出方法 | |
JP5715149B2 (ja) | エレクトロルミネッセンス装置の強化された対向電極 | |
KR100736576B1 (ko) | 전계발광소자와 그 제조방법 | |
US9825246B2 (en) | Process for producing an optoelectronic component and optoelectronic component | |
US9647231B2 (en) | Electrical connection of an OLED device | |
JP5684826B2 (ja) | 有機エレクトロルミネセントデバイス | |
US20160149162A1 (en) | Optoelectronic component, method for producing an optoelectronic component, and mirror device | |
WO2010136963A1 (en) | Electroluminescent devices | |
WO2012127400A1 (en) | Oled with a shunting layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140715 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141002 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150217 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150312 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5715149 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |