JP5705130B2 - 半導体デバイスにおけるはんだバンプ接続を改良するための構造および方法 - Google Patents
半導体デバイスにおけるはんだバンプ接続を改良するための構造および方法 Download PDFInfo
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Description
本発明は、本願と同一日に出願された同時係属中の米国出願連続番号第12/344774(出願人整理番号BUR920080217US1、対応日本国出願 特願2009−271304)に関する。
本発明は集積回路に関し、更に特定すれば、改良されたはんだバンプ接続を有する構造およびかかる構造を製造する方法に関する。
Claims (17)
- 半導体構造を製造する方法であって、
下にある金属層まで延出する誘電層内の複数の個別トレンチを形成することと、
前記複数の個別トレンチ内に金属を堆積して、前記下にある金属層と接触した個別金属ライン・アイランドを形成することと、
前記個別金属ライン・アイランド上に1または2以上の誘電層を堆積することと、
前記個別金属ライン・アイランドの表面を露光して、1または2以上の誘電層にバイアを形成することと、
前記バイア内および前記1または2以上の誘電層の一部の上に、中間金属層を堆積して、前記個別金属ライン・アイランドとのコンタクトを作製することと、
前記中間金属層上に前記複数の個別金属ライン・アイランドに電気的に接続するはんだバンプを形成することと、
を含む、方法。 - 前記中間金属層がキャプチャ・パッドおよび導電パッドを含む、請求項1に記載の方法。
- 前記キャプチャ・パッドが前記導電パッドの上に堆積されている、請求項2に記載の方法。
- 前記キャプチャ・パッドが、上部金層と下部バリア層との間に挟まれたニッケル材料を含む、請求項2に記載の方法。
- 前記キャプチャ・パッドがアンダー・バンプ冶金(UBM)またはボール制限冶金(BLM)である、請求項2に記載の方法。
- 前記アンダー・バンプ冶金(UBM)または前記ボール制限冶金(BLM)が、耐熱金属ベース層、導電金属中間層、および拡散バリア上部層を含む、請求項5に記載の方法。
- 前記はんだバンプが無鉛はんだバンプである、請求項1に記載の方法。
- 前記複数の個別トレンチの形成が、前記誘電層におけるそれぞれ異なるサイズおよび形状の開口を含む、請求項1に記載の方法。
- 第1の誘電層であって、前記第1の誘電層において下にある金属層と接触した導電材料から成る複数の個別金属ライン・アイランドであって、前記複数の個別金属ライン・アイランドの各々が2つの異なる横断面形状およびサイズを含むステップ・エッチング・プロセスを経た形状を有する、前記第1の誘電層と、
前記第1の誘電層の上において、複数の個別金属ライン・アイランドの上面が露光されたバイアを有する、第2の誘電層と、
前記バイアに形成されたキャプチャ・パッドであって、前記複数の個別金属ライン・アイランドの露光された上面と、前記第2の誘電層とに直接接触している、前記キャプチャ・パッドと、
前記キャプチャ・パッドおよび前記複数の個別金属ライン・アイランドを介して、前記金属層と電気的に接続したはんだバンプと、
を含む、はんだバンプ構造。 - 前記複数の個別金属ライン・アイランドがそれぞれ異なるサイズおよび形状のものである、請求項9に記載の構造。
- 前記はんだバンプと電気的に接触したキャプチャ・パッドを更に含む、請求項9に記載の構造。
- 前記はんだバンプと前記個別金属ライン・アイランドとの間のアンダー・バンプ冶金(UBM)またはボール制限冶金(BLM)を更に含み、前記アンダー・バンプ冶金または前記ボール制限冶金が、耐熱金属ベース層、導電金属中間層、および拡散バリア上部層を含む、請求項9に記載の構造。
- 前記キャプチャ・パッドが、1ミクロンから500ミクロンの範囲の間隔(幅)である、請求項9に記載の構造。
- 前記キャプチャ・パッドが、50ミクロンの間隔(幅)である、請求項13に記載の構造。
- 上部金層が、500から1000Åの厚さであり、
下部バリア層が、1000Åから2000Åの厚さである、請求項4に記載の方法。 - ニッケル材料の層が、2〜3ミクロンの厚さである、請求項15に記載の方法。
- 前記キャプチャ・パッドが、上部金層と下部バリア層との間に挟まれたニッケル材料を含み、
上部金層が、500から1000Åの厚さであり、
下部バリア層が、1000Åから2000Åの厚さであり、
ニッケル材料の層が、2〜3ミクロンの厚さである、請求項9に記載の構造。
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US8298930B2 (en) | 2010-12-03 | 2012-10-30 | International Business Machines Corporation | Undercut-repair of barrier layer metallurgy for solder bumps and methods thereof |
US9396991B2 (en) | 2014-08-25 | 2016-07-19 | Globalfoundries Inc. | Multilayered contact structure having nickel, copper, and nickel-iron layers |
CN110745772B (zh) * | 2019-10-21 | 2023-10-20 | 重庆大学 | 一种mems应力隔离封装结构及其制造方法 |
US11205696B2 (en) | 2019-12-24 | 2021-12-21 | Skyworks Solutions, Inc. | High dielectric constant material at locations of high fields |
US20210202375A1 (en) * | 2019-12-27 | 2021-07-01 | Silicon Laboratories Inc. | Top Hat Structure for Isolation Capacitors |
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US5290588A (en) * | 1991-12-19 | 1994-03-01 | Advanced Micro Devices, Incorporated | TiW barrier metal process |
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