JP5704811B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

Info

Publication number
JP5704811B2
JP5704811B2 JP2009282285A JP2009282285A JP5704811B2 JP 5704811 B2 JP5704811 B2 JP 5704811B2 JP 2009282285 A JP2009282285 A JP 2009282285A JP 2009282285 A JP2009282285 A JP 2009282285A JP 5704811 B2 JP5704811 B2 JP 5704811B2
Authority
JP
Japan
Prior art keywords
film
insulating film
peripheral circuit
region
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009282285A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011124454A (ja
JP2011124454A5 (enExample
Inventor
浩一 田添
浩一 田添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009282285A priority Critical patent/JP5704811B2/ja
Priority to US12/941,678 priority patent/US20110143485A1/en
Publication of JP2011124454A publication Critical patent/JP2011124454A/ja
Publication of JP2011124454A5 publication Critical patent/JP2011124454A5/ja
Application granted granted Critical
Publication of JP5704811B2 publication Critical patent/JP5704811B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009282285A 2009-12-11 2009-12-11 固体撮像装置の製造方法 Expired - Fee Related JP5704811B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009282285A JP5704811B2 (ja) 2009-12-11 2009-12-11 固体撮像装置の製造方法
US12/941,678 US20110143485A1 (en) 2009-12-11 2010-11-08 Method of manufacturing solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009282285A JP5704811B2 (ja) 2009-12-11 2009-12-11 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011124454A JP2011124454A (ja) 2011-06-23
JP2011124454A5 JP2011124454A5 (enExample) 2013-01-31
JP5704811B2 true JP5704811B2 (ja) 2015-04-22

Family

ID=44143397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009282285A Expired - Fee Related JP5704811B2 (ja) 2009-12-11 2009-12-11 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US20110143485A1 (enExample)
JP (1) JP5704811B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956909B2 (en) 2010-07-16 2015-02-17 Unimicron Technology Corporation Method of fabricating an electronic device comprising photodiode
TWI534995B (zh) * 2010-07-16 2016-05-21 欣興電子股份有限公司 電子裝置及其製法
JP2014229756A (ja) * 2013-05-22 2014-12-08 キヤノン株式会社 平坦化方法
US20150214114A1 (en) * 2014-01-28 2015-07-30 United Microelectronics Corp. Manufacturing method of semiconductor structure
JP2016171165A (ja) 2015-03-12 2016-09-23 キヤノン株式会社 電子デバイス及び光電変換装置の製造方法
JP6982977B2 (ja) * 2017-04-24 2021-12-17 キヤノン株式会社 固体撮像装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235537A (ja) * 1994-02-23 1995-09-05 Mitsubishi Electric Corp 表面が平坦化された半導体装置およびその製造方法
JPH1167765A (ja) * 1997-08-13 1999-03-09 Sony Corp 半導体装置の製造方法
JP3782297B2 (ja) * 2000-03-28 2006-06-07 株式会社東芝 固体撮像装置及びその製造方法
JP2002270688A (ja) * 2001-03-09 2002-09-20 Oki Electric Ind Co Ltd 半導体装置の製造方法。
US7008840B2 (en) * 2002-08-26 2006-03-07 Matsushita Electrical Industrial Co., Ltd. Method for manufacturing semiconductor device with capacitor elements
US6924472B2 (en) * 2002-11-12 2005-08-02 Eastman Kodak Company Image sensor with improved optical response uniformity
JP4383959B2 (ja) * 2003-05-28 2009-12-16 キヤノン株式会社 光電変換装置およびその製造方法
KR100666371B1 (ko) * 2004-12-23 2007-01-09 삼성전자주식회사 이미지 소자의 제조 방법
KR100698067B1 (ko) * 2004-12-30 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그의 제조방법
JP4618786B2 (ja) * 2005-01-28 2011-01-26 キヤノン株式会社 固体撮像装置の製造方法
JP2006261597A (ja) * 2005-03-18 2006-09-28 Canon Inc 固体撮像装置、その製造方法及びカメラ
JP5002906B2 (ja) * 2005-04-08 2012-08-15 ソニー株式会社 固体撮像装置及びその製造方法
JP2007242697A (ja) * 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP4793402B2 (ja) * 2008-04-21 2011-10-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Also Published As

Publication number Publication date
JP2011124454A (ja) 2011-06-23
US20110143485A1 (en) 2011-06-16

Similar Documents

Publication Publication Date Title
JP4944399B2 (ja) 固体撮像装置
JP6105538B2 (ja) ソリッドステート撮像装置とその製造方法
JP5357441B2 (ja) 固体撮像装置の製造方法
JP5468133B2 (ja) 固体撮像装置
US8648943B2 (en) Solid-state imaging device and camera module
US20240047496A1 (en) Image sensor grid and method of fabrication of same
CN105810698B (zh) 固态成像装置
US20080079106A1 (en) Solid-state imaging device
US10192916B2 (en) Methods of fabricating solid-state imaging devices having flat microlenses
JP5704811B2 (ja) 固体撮像装置の製造方法
US20160300962A1 (en) Methods for forming image sensors with integrated bond pad structures
CN101431090B (zh) 图像传感器及其制造方法
CN110752227B (zh) 图像感测装置
TW201019394A (en) Image sensor and method of manufacturing the same
TW201507119A (zh) 固態影像感測裝置及固態影像感測裝置之製造方法
US20090090989A1 (en) Image Sensor and Method of Manufacturing the Same
US20090140361A1 (en) Image Sensor and Method of Manufacturing the Same
JP2009146957A (ja) 固体撮像装置及び固体撮像装置の製造方法
JP2017045786A (ja) 撮像装置およびその製造方法
JP4682568B2 (ja) 固体撮像素子の製造方法
CN101419975A (zh) 图像传感器及其制造方法
JP2023128745A (ja) 光検出装置、その製造方法、及び電子機器
KR20100007512A (ko) 이미지 센서 및 그 제조 방법
JP2012028585A (ja) 固体撮像素子及びその製造方法
US20240395837A1 (en) Image sensor and manufacturing method thereof

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150224

R151 Written notification of patent or utility model registration

Ref document number: 5704811

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees