JP5698948B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5698948B2 JP5698948B2 JP2010224278A JP2010224278A JP5698948B2 JP 5698948 B2 JP5698948 B2 JP 5698948B2 JP 2010224278 A JP2010224278 A JP 2010224278A JP 2010224278 A JP2010224278 A JP 2010224278A JP 5698948 B2 JP5698948 B2 JP 5698948B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plasma
- end point
- light emission
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Description
2 真空処理室
3 プラズマ
4 被処理材
5 試料台
8 光ファイバ
10 分光装置
11 発光データ比較器
12 ステップ変更通知器
13 データ記録器
14 発光データ補正器
15 差分計算器
16 終点判定器
17 デジタル処理装置
Claims (1)
- 真空処理室内に形成したプラズマを用いて前記真空処理室内に配置された試料の表面の処理対象の1つの膜をエッチング処理するプラズマ処理装置において、
前記エッチング処理が各々異なるプロセス条件で連続的に実行される複数のステップで構成され、前記処理中の時間の経過に伴う前記プラズマからの発光を受光してその強度を検出する検出器と、この検出器からの出力信号に基づいて前記エッチングの終点を検出する終点判定器とを備え、前記検出器が、前記処理中の前記プロセス条件の変更に応じて前の時点と後の時点との前記発光の強度を合わせるように補正する補正器を備えたことを特徴とするプラズマ処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010224278A JP5698948B2 (ja) | 2010-10-01 | 2010-10-01 | プラズマ処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010224278A JP5698948B2 (ja) | 2010-10-01 | 2010-10-01 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012079946A JP2012079946A (ja) | 2012-04-19 |
JP5698948B2 true JP5698948B2 (ja) | 2015-04-08 |
Family
ID=46239837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010224278A Active JP5698948B2 (ja) | 2010-10-01 | 2010-10-01 | プラズマ処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5698948B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111801774B (zh) * | 2019-02-08 | 2023-06-23 | 株式会社日立高新技术 | 蚀刻处理装置、蚀刻处理方法及检测器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6293940A (ja) * | 1985-10-21 | 1987-04-30 | Hitachi Ltd | 終点判定回路 |
JPH01235336A (ja) * | 1988-03-16 | 1989-09-20 | Hitachi Ltd | エッチング終点判定装置 |
JPH02139926A (ja) * | 1988-11-21 | 1990-05-29 | Mitsubishi Electric Corp | 自動終点検出装置 |
JP2998103B2 (ja) * | 1990-07-18 | 2000-01-11 | アネルバ株式会社 | エッチング終了の検知方法 |
JPH08288258A (ja) * | 1995-04-18 | 1996-11-01 | Hitachi Ltd | エッチング終点判定方法並びにドライエッチング方法及びその装置 |
JPH1096090A (ja) * | 1996-09-20 | 1998-04-14 | Hitachi Ltd | エッチング終点判定方法 |
JP2001044171A (ja) * | 1999-07-28 | 2001-02-16 | Matsushita Electric Ind Co Ltd | エッチング終点検出方法および装置 |
-
2010
- 2010-10-01 JP JP2010224278A patent/JP5698948B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012079946A (ja) | 2012-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6033453B2 (ja) | 多変量解析を用いたプラズマエンドポイント検出 | |
US9240359B2 (en) | 3D NAND staircase CD control by using interferometric endpoint detection | |
US6492186B1 (en) | Method for detecting an endpoint for an oxygen free plasma process | |
US6916396B2 (en) | Etching system and etching method | |
KR20010040607A (ko) | 반도체 플라즈마 처리에 있어서의 종점 검출 방법 | |
US8372754B2 (en) | Methods for removing photoresist defects and a method for processing a semiconductor device structure | |
US9059038B2 (en) | System for in-situ film stack measurement during etching and etch control method | |
JP5698948B2 (ja) | プラズマ処理装置 | |
JP2006245097A (ja) | プラズマ処理装置におけるf密度測定方法とプラズマ処理方法およびプラズマ処理装置 | |
US10892145B2 (en) | Substrate processing apparatus, substrate processing method, and method of fabricating semiconductor device using the same | |
US20040018647A1 (en) | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry | |
JP2944802B2 (ja) | ドライエッチング方法 | |
US20060196846A1 (en) | Plasma processing method and apparatus, and method for measuring a density of fluorine in plasma | |
JP2007115765A (ja) | プラズマ処理装置 | |
JP2009231718A (ja) | ドライエッチング終点検出方法 | |
US20200203234A1 (en) | Method of forming high aspect ratio features in semiconductor substrate | |
KR100731124B1 (ko) | 증착 챔버의 세정 방법 | |
US20040266198A1 (en) | Method for determining endpoint of etch layer and etching process implementing said method in semiconductor element fabrication | |
EP3338294B1 (en) | Single-wafer real-time etch rate and uniformity predictor for plasma etch processes | |
JP4700922B2 (ja) | 半導体装置の製造方法 | |
JP3195695B2 (ja) | プラズマ処理方法 | |
JP3885060B2 (ja) | プラズマエッチング処理方法 | |
JPH08298257A (ja) | 発光分光を用いたドライエッチング方法 | |
TWI763223B (zh) | 蝕刻系統及其蝕刻方法 | |
JP3946467B2 (ja) | ドライエッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130924 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140624 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5698948 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |