JP5694427B2 - 透明電極及びこれを含む電子材料 - Google Patents
透明電極及びこれを含む電子材料 Download PDFInfo
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- JP5694427B2 JP5694427B2 JP2013100022A JP2013100022A JP5694427B2 JP 5694427 B2 JP5694427 B2 JP 5694427B2 JP 2013100022 A JP2013100022 A JP 2013100022A JP 2013100022 A JP2013100022 A JP 2013100022A JP 5694427 B2 JP5694427 B2 JP 5694427B2
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- 239000007772 electrode material Substances 0.000 title description 3
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- 229910021389 graphene Inorganic materials 0.000 claims description 79
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052759 nickel Inorganic materials 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- HPGNGICCHXRMIP-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dithiine Chemical compound S1CCSC2=CSC=C21 HPGNGICCHXRMIP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3634—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing carbon, a carbide or oxycarbide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Non-Insulated Conductors (AREA)
- Carbon And Carbon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Description
<比較例1>
<実施例1>
<実験例1>
<比較例2>
<実施例2>
<実験例2>
<実施例3>
<実験例3>
<実験例4>
<比較例3>
<実施例4>
<実験例5>
<比較例4>
<実施例5>
<実験例6>
11、21、51、61、71、91、101 基材
12、22、52、62、72、92、102 第1の電極層
13、23a、23b、63、73、103 グラフェンオキサイド層
53、63 オーバーコーティング層
Claims (13)
- 基材と、
前記基材上に二つ以上の電極が互いに離間して形成される第1の電極層と、
前記第1の電極層の上部及び/または下部に前記二つ以上の電極に跨がるように形成され、隣接する電極間で水平方向に絶縁特性を維持し、前記第1の電極層の保護層として機能し、前記第1の電極層に対して垂直方向に電気伝導性を有する、グラフェンオキサイド層とを含む、透明電極。 - 前記第1の電極層は、伝導体で形成される請求項1に記載の透明電極。
- 前記伝導体は、金属系材料、炭素系材料、金属酸化物材料及び電導性高分子よりなる群から選ばれる1種以上である請求項2に記載の透明電極。
- 前記金属系材料は、Cu、Al、Ag、Au、Pt、Ni、Pd、Fe、Ti、Zn及びTiよりなる群から選ばれる1種以上である請求項3に記載の透明電極。
- 前記炭素系材料は、カーボンナノチューブ(CNT)、カーボンナノファイバ(CNF)、カーボンブラック(Carbon Black)、グラフェン(Graphene)、フラーレン(Fullerene)及びグラファイト(Graphite)よりなる群から選ばれる1種以上である請求項3に記載の透明電極。
- 前記金属酸化物材料は、透明電導性酸化物(Transparent Conductive Oxide)である請求項3に記載の透明電極。
- 前記金属酸化物材料の金属は、Cd、Zn、In、Pb、Mo、W、Sb、Ti、Ag、Mn、Sn、Zr、Sr、Ga、Si及びCrよりなる群から選ばれる1種以上である請求項6に記載の透明電極。
- 前記電導性高分子は、ポリ(3,4−エチレンジオキシチオフェン)(poly(3,4-ethy1enedioxythiophene))、ポリアセチレン(po1yacety1ene)、ポリアニリン(po1yani1ine)、ポリピロール(polypyrrole)、ポリチオフェン(polythiophene)及びポリサルファーニトリド(polysulfurnitride)よりなる群から選ばれる1種以上である請求項3に記載の透明電極。
- 前記第1の電極層は、シート、粒子、ナノワイヤ、ファイバ、リボン、チューブ及びグリッドよりなる群から選ばれる1種以上の形態を有する請求項1に記載の透明電極。
- 前記グラフェンオキサイド層は、100nm以下の厚さで形成される請求項1に記載の透明電極。
- 前記透明電極は、面抵抗が1,000ohm/□以下である請求項1に記載の透明電極。
- 請求項1の透明電極を備える電子材料。
- 前記電子材料が、液晶表示素子、電子紙表示素子、光電素子、タッチスクリーン、有機EL素子、太陽電池、燃料電池、二次電池、スーパーキャパシ夕、電磁波遮蔽層及びノイズ遮蔽層である請求項12に記載の電子材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0051552 | 2012-05-15 | ||
KR1020120051552A KR20130127781A (ko) | 2012-05-15 | 2012-05-15 | 투명 전극 및 이를 포함하는 전자 재료 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014007147A JP2014007147A (ja) | 2014-01-16 |
JP5694427B2 true JP5694427B2 (ja) | 2015-04-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013100022A Expired - Fee Related JP5694427B2 (ja) | 2012-05-15 | 2013-05-10 | 透明電極及びこれを含む電子材料 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130306361A1 (ja) |
JP (1) | JP5694427B2 (ja) |
KR (1) | KR20130127781A (ja) |
CN (1) | CN103426941A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016208820A1 (ko) * | 2015-06-24 | 2016-12-29 | 울산과학기술원 | 은나노와이어 기반의 고효율 투명전극 제조장치 및 투명전극 제조방법 |
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CN108990260A (zh) * | 2018-09-21 | 2018-12-11 | 江西新正耀光学研究院有限公司 | 透光线路板结构、电路板及透光线路板制造方法 |
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KR101435999B1 (ko) * | 2007-12-07 | 2014-08-29 | 삼성전자주식회사 | 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극 |
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KR101089066B1 (ko) * | 2010-03-19 | 2011-12-06 | 한국과학기술원 | 그라핀 옥사이드를 이용한 플렉서블 저항변화 메모리 소자 및 이의 제조방법 |
CN101859858B (zh) * | 2010-05-07 | 2013-03-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于石墨烯的透明导电电极及其制法与应用 |
KR101153947B1 (ko) * | 2010-07-21 | 2012-06-08 | 한국세라믹기술원 | 부분적으로 열 환원된 그라핀막 제조방법 및 염료감응형 태양전지의 상대전극 제조방법 |
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KR101407209B1 (ko) * | 2010-10-07 | 2014-06-16 | 포항공과대학교 산학협력단 | 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 |
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WO2016208820A1 (ko) * | 2015-06-24 | 2016-12-29 | 울산과학기술원 | 은나노와이어 기반의 고효율 투명전극 제조장치 및 투명전극 제조방법 |
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JP2014007147A (ja) | 2014-01-16 |
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CN103426941A (zh) | 2013-12-04 |
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