JP5693721B2 - ショットキーダイオードを有する整流器装置 - Google Patents
ショットキーダイオードを有する整流器装置 Download PDFInfo
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- JP5693721B2 JP5693721B2 JP2013522147A JP2013522147A JP5693721B2 JP 5693721 B2 JP5693721 B2 JP 5693721B2 JP 2013522147 A JP2013522147 A JP 2013522147A JP 2013522147 A JP2013522147 A JP 2013522147A JP 5693721 B2 JP5693721 B2 JP 5693721B2
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- 230000000903 blocking effect Effects 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000002441 reversible effect Effects 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000012080 ambient air Substances 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- 238000012856 packing Methods 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 6
- 239000003570 air Substances 0.000 description 5
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- 229910000679 solder Inorganic materials 0.000 description 5
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- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/04—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
- H02K11/049—Rectifiers associated with stationary parts, e.g. stator cores
- H02K11/05—Rectifiers associated with casings, enclosures or brackets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Description
自動車の発電機システムでは、交流ないしは相交流を整流するため、シリコン製のダイオードが使用されることが多い。例えば、6個のダイオードが1つのB6整流器ブリッジにまとめて接続される。これらのダイオードは、いわゆる圧入式ダイオードとして構成される。圧入式ダイオードは、片側が整流器の冷却体内に圧入され、これによってこの整流器の冷却体に電気的および熱的に強固かつ持続的に接続されるのである。
PF = IFAV・UF(T) (1)
となる。
PR = 0.5・IR(T)・UR (2)
が成り立つ。
請求項1に記載した特徴的構成を有する整流器装置では、この整流器装置の上記の動作領域が拡大される。これは実質的につぎようにして得られる。すなわち、温度上昇に伴ってダイオード損失が減少する動作領域においてこの整流器装置を動作させるだけでなく、温度上昇に伴ってこのダイオード損失が増大する領域においても動作させることによって得られるのである。ここでは、以下でさらに説明する設計ルールにより、温度上昇に伴って上記のダイオード損失が再度増大する領域においても上記の整流器装置が確実に動作できるようにすることによって達成される。
Claims (11)
- 半導体素子としてショットキーダイオードを含む複数のダイオードを有する整流器装置を備えた発電機であって、
該発電機は、発電機回転数に依存して前記ダイオードの温度が最大になる高温点を有する、発電機において、
前記半導体素子の半導体の阻止層と周囲空気との間の熱抵抗(Rth)が、前記発電機の前記高温点における動作時に、あらかじめ設定した値を上回らず、
前記ダイオードの最大許容阻止層温度が少なくとも、前記高温点における前記動作に対して設定されており、
前記複数のショットキーダイオード(D1−D6)は、ダイオード損失が温度の上昇に伴って増大する動作領域で動作させられる、
ことを特徴とする発電機。 - 請求項1または2に記載の発電機において、
前記半導体の阻止層と周囲空気との間の前記熱抵抗は、前記発電機の高温点における動作時に7K/Wよりも低い、
ことを特徴とする発電機。 - 請求項1または2に記載の発電機において、
前記半導体の阻止層と周囲空気との間の前記熱抵抗は、前記発電機の高温点における動作時に5K/Wよりも低い、
ことを特徴とする発電機。 - 請求項1または2に記載の発電機において、
前記半導体の阻止層と周囲空気との間の前記熱抵抗は、前記発電機の高温点における動作時に3K/Wよりも低い、
ことを特徴とする発電機。 - 請求項1から5までのいずれか1項に記載の発電機において、
ショットキーダイオードとしてトレンチMOSバリアショットキーダイオード(TMBS)を有する、
ことを特徴とする発電機。 - 請求項6に記載の発電機において、
ショットキーダイオードとして、溝の深さが1−3μmであり、溝と溝との間の間隔が0.5−1μmであるトレンチMOSバリアショットキーダイオード(TMBS)を有する、
ことを特徴とする、発電機。 - 請求項1から5までのいずれか1項に記載の発電機において、
ショットキーダイオードとしてトレンチジャンクションバリアショットキーダイオード(TJBS)を有する、
ことを特徴とする発電機。 - 請求項8に記載の発電機において、
ショットキーダイオードとして、溝の深さが1−3μmであり、溝と溝との間の間隔が0.5−1μmであるトレンチジャンクションバリアショットキーダイオード(TJBS)を有する、
ことを特徴とする発電機。 - 請求項1から9までのいずれか1項に記載の発電機において、
前記ショットキーダイオードは、0.65eVないし0.75eVのショットキーバリアを有するダイオードである、
ことを特徴とする発電機。 - 請求項1から10までのいずれか1項に記載の発電機において、
前記ダイオードは、圧入式ダイオードである、
ことを特徴とする発電機。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010038879A DE102010038879A1 (de) | 2010-08-04 | 2010-08-04 | Gleichrichteranordnung, welche Einpressdioden aufweist |
DE102010038879.3 | 2010-08-04 | ||
PCT/EP2011/059342 WO2012016733A1 (de) | 2010-08-04 | 2011-06-07 | Gleichrichteranordnung, welche schottkydioden aufweist |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013539208A JP2013539208A (ja) | 2013-10-17 |
JP5693721B2 true JP5693721B2 (ja) | 2015-04-01 |
Family
ID=44209845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013522147A Active JP5693721B2 (ja) | 2010-08-04 | 2011-06-07 | ショットキーダイオードを有する整流器装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20140001927A2 (ja) |
EP (1) | EP2601735B1 (ja) |
JP (1) | JP5693721B2 (ja) |
KR (1) | KR101862424B1 (ja) |
CN (1) | CN103081327B (ja) |
DE (1) | DE102010038879A1 (ja) |
TW (1) | TWI659540B (ja) |
WO (1) | WO2012016733A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012214056B4 (de) * | 2012-08-08 | 2020-10-29 | Robert Bosch Gmbh | Hoch temperaturwechselfeste Einpressdiode |
CN106057913A (zh) * | 2016-06-30 | 2016-10-26 | 南通康比电子有限公司 | 一种新型沟槽式势垒肖特基二极管及其生产工艺 |
JP6304520B1 (ja) * | 2017-07-27 | 2018-04-04 | 株式会社レーザーシステム | 半導体装置 |
CN110289220A (zh) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | 一种结温250℃的碳化硅二极管芯片绝缘保护方法 |
CN110728025A (zh) * | 2019-09-16 | 2020-01-24 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种肖特基模块封装二极管热阻计算方法 |
CN111693840A (zh) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | 一种利用反向特性测试肖特基二极管热阻的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365102A (en) | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
DE19549202B4 (de) * | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Gleichrichterdiode |
DE10005183A1 (de) * | 2000-02-05 | 2001-08-09 | Bosch Gmbh Robert | Gleichrichteranordnung |
JP4111162B2 (ja) * | 2004-03-29 | 2008-07-02 | 株式会社デンソー | 車両用交流発電機 |
DE102004053761A1 (de) | 2004-11-08 | 2006-05-18 | Robert Bosch Gmbh | Halbleitereinrichtung und Verfahren für deren Herstellung |
DE102004056663A1 (de) * | 2004-11-24 | 2006-06-01 | Robert Bosch Gmbh | Halbleitereinrichtung und Gleichrichteranordnung |
-
2010
- 2010-08-04 DE DE102010038879A patent/DE102010038879A1/de not_active Ceased
-
2011
- 2011-06-07 JP JP2013522147A patent/JP5693721B2/ja active Active
- 2011-06-07 KR KR1020137002815A patent/KR101862424B1/ko active IP Right Grant
- 2011-06-07 EP EP11723092.0A patent/EP2601735B1/de active Active
- 2011-06-07 CN CN201180038451.9A patent/CN103081327B/zh active Active
- 2011-06-07 WO PCT/EP2011/059342 patent/WO2012016733A1/de active Application Filing
- 2011-06-07 US US13/814,161 patent/US20140001927A2/en not_active Abandoned
- 2011-08-02 TW TW100127302A patent/TWI659540B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2013539208A (ja) | 2013-10-17 |
TWI659540B (zh) | 2019-05-11 |
US20130207525A1 (en) | 2013-08-15 |
EP2601735A1 (de) | 2013-06-12 |
DE102010038879A1 (de) | 2012-02-09 |
CN103081327B (zh) | 2016-09-14 |
KR20130045904A (ko) | 2013-05-06 |
EP2601735B1 (de) | 2018-04-04 |
US20140001927A2 (en) | 2014-01-02 |
WO2012016733A1 (de) | 2012-02-09 |
TW201230345A (en) | 2012-07-16 |
KR101862424B1 (ko) | 2018-05-29 |
CN103081327A (zh) | 2013-05-01 |
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