JP5661973B2 - 位相シフトマスクの製造方法 - Google Patents
位相シフトマスクの製造方法 Download PDFInfo
- Publication number
- JP5661973B2 JP5661973B2 JP2014501331A JP2014501331A JP5661973B2 JP 5661973 B2 JP5661973 B2 JP 5661973B2 JP 2014501331 A JP2014501331 A JP 2014501331A JP 2014501331 A JP2014501331 A JP 2014501331A JP 5661973 B2 JP5661973 B2 JP 5661973B2
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- JP
- Japan
- Prior art keywords
- phase shift
- pattern
- layer
- light shielding
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000010363 phase shift Effects 0.000 title claims description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title description 3
- 238000005530 etching Methods 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 20
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 description 22
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- QBEGYEWDTSUVHH-UHFFFAOYSA-P diazanium;cerium(3+);pentanitrate Chemical compound [NH4+].[NH4+].[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O QBEGYEWDTSUVHH-UHFFFAOYSA-P 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- -1 and specifically Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014501331A JP5661973B2 (ja) | 2012-06-20 | 2013-06-05 | 位相シフトマスクの製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012138460 | 2012-06-20 | ||
JP2012138460 | 2012-06-20 | ||
JP2014501331A JP5661973B2 (ja) | 2012-06-20 | 2013-06-05 | 位相シフトマスクの製造方法 |
PCT/JP2013/003519 WO2013190786A1 (ja) | 2012-06-20 | 2013-06-05 | 位相シフトマスクブランクス、位相シフトマスク及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5661973B2 true JP5661973B2 (ja) | 2015-01-28 |
JPWO2013190786A1 JPWO2013190786A1 (ja) | 2016-02-08 |
Family
ID=49768401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014501331A Active JP5661973B2 (ja) | 2012-06-20 | 2013-06-05 | 位相シフトマスクの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5661973B2 (ko) |
KR (1) | KR101560385B1 (ko) |
CN (1) | CN104471478A (ko) |
TW (1) | TWI599842B (ko) |
WO (1) | WO2013190786A1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6456748B2 (ja) * | 2015-03-28 | 2019-01-23 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
JP2017033004A (ja) * | 2016-09-21 | 2017-02-09 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6259508B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
JP6659855B2 (ja) * | 2017-06-28 | 2020-03-04 | アルバック成膜株式会社 | マスクブランクス、位相シフトマスク、ハーフトーンマスク、マスクブランクスの製造方法、及び位相シフトマスクの製造方法 |
JP6998181B2 (ja) * | 2017-11-14 | 2022-02-04 | アルバック成膜株式会社 | マスクブランク、位相シフトマスクおよびその製造方法 |
JP6756796B2 (ja) * | 2018-10-09 | 2020-09-16 | アルバック成膜株式会社 | マスクブランクス、ハーフトーンマスク、製造方法 |
KR102598440B1 (ko) * | 2019-12-20 | 2023-11-07 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
JP6987912B2 (ja) | 2020-03-16 | 2022-01-05 | アルバック成膜株式会社 | マスクブランクス、位相シフトマスク、製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008203374A (ja) * | 2007-02-16 | 2008-09-04 | Clean Surface Gijutsu:Kk | ハーフトーンブランクス |
JP2008304942A (ja) * | 2002-03-01 | 2008-12-18 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法 |
JP2010128003A (ja) * | 2008-11-25 | 2010-06-10 | Ulvac Seimaku Kk | ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法 |
JP2011013283A (ja) * | 2009-06-30 | 2011-01-20 | Ulvac Seimaku Kk | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
JP2011075607A (ja) * | 2009-09-29 | 2011-04-14 | Ulvac Japan Ltd | フォトマスクブランクス,フォトマスク,フォトマスク製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5682493B2 (ja) * | 2010-08-04 | 2015-03-11 | 信越化学工業株式会社 | バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法 |
-
2013
- 2013-06-05 JP JP2014501331A patent/JP5661973B2/ja active Active
- 2013-06-05 WO PCT/JP2013/003519 patent/WO2013190786A1/ja active Application Filing
- 2013-06-05 CN CN201380002495.5A patent/CN104471478A/zh active Pending
- 2013-06-05 KR KR1020147001637A patent/KR101560385B1/ko active IP Right Grant
- 2013-06-13 TW TW102120897A patent/TWI599842B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008304942A (ja) * | 2002-03-01 | 2008-12-18 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法 |
JP2008203374A (ja) * | 2007-02-16 | 2008-09-04 | Clean Surface Gijutsu:Kk | ハーフトーンブランクス |
JP2010128003A (ja) * | 2008-11-25 | 2010-06-10 | Ulvac Seimaku Kk | ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法 |
JP2011013283A (ja) * | 2009-06-30 | 2011-01-20 | Ulvac Seimaku Kk | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
JP2011075607A (ja) * | 2009-09-29 | 2011-04-14 | Ulvac Japan Ltd | フォトマスクブランクス,フォトマスク,フォトマスク製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013190786A1 (ja) | 2013-12-27 |
CN104471478A (zh) | 2015-03-25 |
KR101560385B1 (ko) | 2015-10-26 |
JPWO2013190786A1 (ja) | 2016-02-08 |
KR20140038536A (ko) | 2014-03-28 |
TW201413370A (zh) | 2014-04-01 |
TWI599842B (zh) | 2017-09-21 |
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